EP0234989B1 - Herstellungsverfahren einer feldeffektangeregten Kathodenlumineszenz-Wiedergabevorrichtung - Google Patents

Herstellungsverfahren einer feldeffektangeregten Kathodenlumineszenz-Wiedergabevorrichtung Download PDF

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Publication number
EP0234989B1
EP0234989B1 EP87400140A EP87400140A EP0234989B1 EP 0234989 B1 EP0234989 B1 EP 0234989B1 EP 87400140 A EP87400140 A EP 87400140A EP 87400140 A EP87400140 A EP 87400140A EP 0234989 B1 EP0234989 B1 EP 0234989B1
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EP
European Patent Office
Prior art keywords
coating
process according
production process
holes
layer
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Expired - Lifetime
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EP87400140A
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English (en)
French (fr)
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EP0234989A1 (de
Inventor
Michel Borel
Jean-François Boronat
Robert Meyer
Philippe Rambaud
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group

Definitions

  • the present invention relates to a method of manufacturing a display device by cathodoluminescence excited by field emission or cold emission. It applies in particular to the production of simple matrix displays, allowing the viewing of fixed images, and to the production of complex multiplexed screens, allowing the viewing of moving images, of the television image type.
  • This display device comprises a display cell 2, sealed and evacuated, comprising two glass walls 4 and 6, located opposite one another.
  • the lower wall 6 of the cell 2 is equipped with a first series of conductive strips 8, mutually parallel, playing the role of cathodes and a second series of conductive strips 10, parallel to each other, playing the role of grids.
  • the conductive strips 10 are oriented perpendicular to the conductive strips 8 and isolated from the conductive strips 8 by an insulating and continuous layer 12, in particular made of silica.
  • the conductive strips 8 and 10 respectively represent columns and rows. Each crossing of a line and a column corresponds to an elementary display point 14.
  • the conductive strips or grids 10 and the insulating layer 12 are pierced with a large number of holes 16 in which are housed microemitters or electron microchannels.
  • Each elementary display point 14 corresponds to a multitude of micro-transmitters.
  • microemitters each consist of a metal cone 18 emitting electrons when a suitable electric field is applied to them.
  • These metal cones 18 rest by their base directly on the cathodes 8 and the top of these cones is substantially at the level of the conductive strips 10.
  • the base diameter of the cones and their height are for example of the order of 1 lim.
  • the upper wall 4 of the cell 2, as shown in FIG. 1, is provided with a continuous conductive layer 20 acting as an anode.
  • This anode 20 is covered with a layer 22 made of a material emitting light when it is subjected to an electronic bombardment coming from the microemitters 18.
  • the emission of electrons by a microemitter 18 can be achieved by simultaneously polarizing the cathode 8 and the grids 10 located opposite, as well as the anode 20.
  • the anode 20 can in particular be brought to ground, the grids 10 are , either brought to the potential of the anode, or negatively polarized with respect to the latter using a voltage source 24.
  • the cathodes 8 are negatively polarized with respect to the grid using a source voltage 26.
  • the cathodes 8 and the grids 10 can be polarized sequentially in order to make appear a point-by-point image on the display cell 2. The image is observed from the side of the upper wall 4 of the cell.
  • the number of microemitters 18 per display point 14, that is to say by crossing a cathode and a grid, is generally high, which makes it possible to have a more uniform emission characteristic of one display point to another (average effect); this gives a certain redundancy of the microemitters making it possible to tolerate a certain proportion of microemitters not functioning.
  • the number of microemitters is between 10 4 and 10 5 transmitters per mm 2 . Consequently, traditional manufacturing, requiring precise positioning of the microemitters facing the cathodes and grids, would be complex and would increase the cost of the display device.
  • the object of the present invention is precisely a relatively simple and inexpensive method for manufacturing a display device operating by cathodoluminescence excited by field effect as described above.
  • This method has the advantage of simple implementation. In particular, it allows the production of electron microemitters in the holes formed in the second and third layers, distributed over the entire display device, without requiring precise positioning with respect to the cathodes and grids. Only microemitters located at an intersection of a cathode and a grid are effectively active.
  • an insulating intermediate layer is advantageously interposed between the substrate and the first conductive layer, in which the cathodes are made.
  • the first conductive layer In order to minimize the resistance to access to the microemitters, the first conductive layer must be made of a material that conducts electricity well. Furthermore, this first conductive layer must have good compatibility with the second insulating layer and in particular good adhesion and must be inert with respect to the etching method of this second insulating layer.
  • the first conductive layer is made of a material chosen from indium oxide, tin oxide and aluminum. Indium oxide and tin oxide are preferably used for producing screens of small dimensions and of low complexity such as screens used for viewing still images.
  • aluminum is preferably used when producing complex multiplexed screens and of large dimensions used in particular for viewing animated images of the television image type.
  • the second insulating layer In order to minimize the capacitances between the cathodes and the grids, and therefore to minimize the response time of the microemitters, the second insulating layer must have as low a dielectric constant as possible. To this end, this second insulating layer is preferably made of silicon oxide (Si0 2 ) or silica.
  • This silicon oxide layer can be deposited by the chemical vapor deposition (CVD) technique, by sputtering or by vacuum evaporation.
  • CVD chemical vapor deposition
  • the chemical vapor deposition technique is preferably used, a technique which makes it possible to obtain an oxide layer of uniform quality and of constant thickness.
  • the opening of the holes in the insulating layer in particular of silicon oxide, can be carried out by dry or wet etching techniques well known to those skilled in the art.
  • the third conductive layer in which the grids are formed must be made of a material having good adhesion to the second insulating layer, for example made of silicon oxide, as well as good chemical resistance to the various products used to make the microemitters.
  • the third conductive layer is preferably made of a metal chosen from niobium, tantalum and aluminum.
  • this third conductive layer of a size close to one micron, the formation of these holes is advantageously carried out by an anisotropic dry etching technique.
  • the fourth layer playing the role of mask for the deposition of the fifth layer is made of metal and in particular nickel.
  • the deposition of this fourth layer of nickel is advantageously carried out by evaporation under vacuum at a grazing incidence so as not to cover the holes made in the second and third layers.
  • the elimination of this metallic layer is advantageously carried out by electrochemical dissolution.
  • the choice of the material of the fifth layer is essentially dictated by these properties with respect to the emission by field effect or cold emission as well as by its chemical resistance to the techniques of deposition and elimination of the fourth layer serving the production of microemitters.
  • the electron-emitting material can be hafnium, niobium, molybdenum, zirconium, lanthanum hexaboride (LaB s ), titanium carbide, tantalum carbide, hafnium carbide, carbide zirconium, etc. We choose for example molybdenum.
  • the cleaning of the lower substrate 6 is first of all carried out in order to obtain good flatness and a good surface condition to allow optimized production of the microemitters.
  • the substrate 6 can be a glass or ceramic plate.
  • a layer of silicon oxide (Si0 2 ) 7 of approximately 100 nm is then deposited by sputtering.
  • the insulating layer 7 is then covered with a conductive layer 8a of indium oxide in which the cathodes 8 will be produced.
  • This layer of indium oxide has a thickness of 160 nm, and can be deposited by sputtering.
  • a positive resin mask 11 representing the image of the cathodes to be produced.
  • the layer of indium oxide 8a is etched to form, as shown in FIG. 4, cathodes 8 0.7 mm wide at a pitch P of 1 mm.
  • the etching of the layer 8a is carried out by chemical attack with orthophosphoric acid brought to 110 ° C.
  • the etching of the layer of indium oxide 8a is carried out over the entire thickness of the layer.
  • the resin mask is then removed by chemical dissolution. 1 0
  • the silicon oxide layer 12 is then deposited, as shown in FIG. 5, by the technique chemical vapor deposition from silane, phosphine and oxygen gases.
  • This oxide layer 12 has a thickness of 1 li m.
  • the oxide layer 12 is then completely covered with a conductive layer 10a in which the grids will be produced subsequently. 20 this layer 10a is deposited by vacuum evaporation. It has a thickness of 0.4 ⁇ m and is made of niobium.
  • a resin mask 13 is then formed on the conductive layer 10a by the conventional photolithography methods 25 (resin deposition, irradiation, development). This resin mask 13 represents the positive image of the holes to be produced in the grid layer 10a and the insulating layer 12.
  • the holes 16 are made in the layer of grid material 10a and the insulating layer 12. These holes 16 pass right through the layers 10a and 12.
  • the etchings of layers 10a and 12 are produced successively.
  • the etching of the layer 10a is carried out by a reactive ion etching (GIR) process using a sulfur hexafluoride plasma (SF 6 ).
  • GIR reactive ion etching
  • SF 6 sulfur hexafluoride plasma
  • the holes 16 made in the conductive layer 10a have a diameter equal to 50 1.31 ⁇ m to ⁇ 0.1 ⁇ m.
  • the holes in the silica layer 12 are produced, for example by chemical attack by immersing the structure in an attack solution of hydrofluoric acid and ammonium fluoride.
  • the resin mask 55 is chemically removed 55.
  • the profile of the holes 16 thus produced is illustrated in FIG. 7.
  • a layer of 60 nickel 23 is deposited by evaporation under vacuum at a grazing incidence relative to the surface of the structure; the angle a formed between the axis of evaporation and the surface of the layer 10a is close to 15 ° .
  • the nickel layer 23 has a thickness of 150 nm. 6 5 This deposition technique makes it possible not to plug the holes 16.
  • a layer of molybdenum 18a is deposited on the entire structure.
  • This layer 18a has a thickness of 1.8 ⁇ m. It is deposited under normal incidence relative to the surface of the structure; this deposition technique makes it possible to obtain cones 18 of molybdenum housed in the 1 holes 16 having a height of 1.2 to 1.5 ⁇ m.
  • the nickel layer 23 is then selectively dissolved by an electrochemical process so as to release, as shown in FIG. 9, the perforated niobium layer 10a and to reveal the 15 electron-emitting microtips 18.
  • etching the layer 10a and an etching of the insulating layer 12 in order to disengage the ends 9 of the cathode 8 to allow a later 20 ment the electrical contacting of these cathodes.
  • This etching is carried out through a resin mask (not shown), obtained according to conventional photolithography methods, the resin forming the mask must have a sufficiently high viscosity 25 in order to cover all the holes 16 formed in the niobium layer 10a and the silicon oxide layer 12.
  • the etching of the niobium layer 10a is performed as above by a reactive ion etching process 30 and the etching of the silica layer 12 by etching.
  • a resin mask 25 is then produced on the structure obtained representing the image of the grids 10 to be produced in the niobium layer 10a.
  • This mas- 35 as resin is formed using conventional photolithography methods. Then carried out, through the mask 25, a dry etching of the reactive ionic type with SF 6 so as to release the conductive strips 10 perpendicular to the 40 conductive strips 8.
  • the resin mask 25 is then removed by chemical attack.
  • the structure obtained after elimination of the mask 25 is that shown in FIG. 11.
  • a conductive layer 20 is made of indium oxide (In 2 0 3 ) or tin oxide (Sn0 2 ) by sputtering corresponding to the anode of the display cell 2.
  • This layer 20 has a thickness of 50 of the order of 100 nm.
  • the anode 20 is then covered with a cathodoluminescent layer 22 by sputtering.
  • This layer 22 is made of zinc oxide and has a thickness of 1 wm.
  • the substrate 4 covered with the anode 20 and the cathodoluminescent material 55 is then presented above the grids 10.
  • a space of 30 to 50 ⁇ m is maintained between the cathodoluminescent material 22 and the grids 10 by means of spacers glass 27 randomly distributed.
  • the periphery of the anode 20 is hermetically welded to the lower part of the cell, by means of a fusible glass 29. The assembly obtained is then placed under vacuum.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Claims (11)

1. Verfahren zum Herstellen einer feldangeregten Kathodenlumineszenz-Wiedergabevorrichtung, das folgende, sukzessive Schritte aufweist:
- Abscheiden einer ersten, leitfähigen Schicht (8a) auf einem isolierenden Substrat,
- Atzen der ersten Schicht (8a) zur Herstellung leitfähiger, paraleler Bänder (8), die die Rolle der Kathoden spielen,
- Abscheiden einer zweiten, isolierenden Schicht (12) auf die erhaltene Struktur,
- Abscheiden einer dritten, leitfähigen Schicht (10a) auf die zweiten Schicht (12),
- Öffnen von Löchern (16) in die dritte Schicht (10a), die auf der zweiten (12) und ersten (8) Schicht enden, wobei diese Löcher (16) auf der gesamten Oberfläche der dritten Schicht verteilt sind,
- Abscheiden einer vierten Schicht (23) auf die dritte, geätzte Schicht (10a), wobei die vierte Schicht (23) die Löcher weder bedeckt noch verstopft,
- Abscheiden einer fünften Schicht (18a) eines Elektronen emittierenden Materials, das auch in die Löcher bis auf deren Boden eindringt, über die gesamte, erhaltene Struktur,
- Entfernen der vierten Schicht (23), wodurch das Entfernen des Elektronen emittierenden Materials, das die vierte Schicht überlagert, und das Belassen dieses Emittermaterials in dem Löchern bewirkt wird,
- Ätzen der dritten (10a) und zweiten (12) Schicht, um wenigstens eines der Enden (9) der ersten, leitfähigen Bänder (8) offenzulegen,
- Ätzen der dritten Schicht (10a), um zweite parallele, leitfähige Bänder herzustellen, die als Gitter (10) dienen, wobei sich die ersten und zweiten Bänder kreuzen, und
- Herstellen einer Anode (20) und einer Schicht aus Kathodenlumineszenzmaterial (22) gegenüber den zweiten, leitfähigen Bändern (10).
2. Herstellungsversfahren nach Anspruch 1, dadurch gekennzeichnet, daß man zwischen das Substrat (6) und die erste Schicht (8a) eine isolierende Zwischenschicht (7) einfügt.
3. Herstellungsverfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die erste Schicht aus einem Material besteht, das aus Indiumoxyd, Zinnoxyd und Aluminium ausgewählt ist.
4. Herstellungsvefahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die zweite Schicht (12) aus Siliziummoxyd (SI02) besteht.
5. Herstellungsverfahren nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß die zweite Schicht (12) mittels chemischer Dampfphasenabscheidung abgeschieden wird.
6. Herstellungsverfahren nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß die dritte Schicht (10a) aus einem aus Niob, Tantal und Aluminium ausgewählten Metall besteht.
7. Herstellungsverfahren nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß man die Löcher (16) in der dritten Schicht (10a) durch ein anisotropes Trockenätzverfahren herstellt.
8. Herstellungsverfahren nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, daß die vierte Schicht (23) aus Nickel besteht und daß das Entfernen dieser vierten Schicht (23) durch elektromechanische Lösung durchgeführt wird.
9. Herstellungsverfahren nach einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, daß die vierte Schicht (23) durch Vakuumverdampfung unter einem flachen Winkel (a) bezüglich der Oberfläche der Struktur aufgebracht wird.
10. Herstellungsverfahren nach einem der Ansprüche 1 bis 9, dadurch gekennzeichnet, daß die fünfte Schicht (18a) durch Vakuumverdampfung von Molybdän erhalten wird.
11. Herstellungsverfahren nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, daß die Anode (20) aus einer kontinuierlichen, leitfähigen Schicht besteht, die mit einer kontinuierlichen, aus einem kathodenlumineszierenden Material (22) bestehenden Schicht bedeckt ist, wobei die Anode (20) auf einem transparanten, isolierenden Träger (4) abgeschieden wird.
EP87400140A 1986-01-24 1987-01-21 Herstellungsverfahren einer feldeffektangeregten Kathodenlumineszenz-Wiedergabevorrichtung Expired - Lifetime EP0234989B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8601024 1986-01-24
FR8601024A FR2593953B1 (fr) 1986-01-24 1986-01-24 Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ

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EP0234989A1 EP0234989A1 (de) 1987-09-02
EP0234989B1 true EP0234989B1 (de) 1990-09-05

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US (1) US4857161A (de)
EP (1) EP0234989B1 (de)
JP (1) JPH07111869B2 (de)
DE (1) DE3764668D1 (de)
FR (1) FR2593953B1 (de)

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FR2593953A1 (fr) 1987-08-07
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DE3764668D1 (de) 1990-10-11
FR2593953B1 (fr) 1988-04-29
JPS62172631A (ja) 1987-07-29
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