EP0671755A1 - Elektronen Quelle mit Mikrospitzenemissionskathoden - Google Patents
Elektronen Quelle mit Mikrospitzenemissionskathoden Download PDFInfo
- Publication number
- EP0671755A1 EP0671755A1 EP95400494A EP95400494A EP0671755A1 EP 0671755 A1 EP0671755 A1 EP 0671755A1 EP 95400494 A EP95400494 A EP 95400494A EP 95400494 A EP95400494 A EP 95400494A EP 0671755 A1 EP0671755 A1 EP 0671755A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrodes
- microtips
- electrically conductive
- resistive layer
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 18
- 239000000377 silicon dioxide Substances 0.000 abstract description 9
- 238000000206 photolithography Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005136 cathodoluminescence Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Definitions
- the present invention relates to an electron source with microtip emissive cathodes ("microtips").
- Document (1) describes a method for manufacturing a display device by cathodoluminescence excited by field effect emission, the source of microtip electrons being formed on a glass substrate and has a matrix structure.
- Documents (2), (3) and (4) describe improvements made to this source described in document (1).
- This improvement is obtained by introducing an electrical resistance mounted in series with the microtips.
- This electrical resistance is formed from a resistive layer which can be continuous or discontinuous.
- Figure 1 is a schematic and partial view of a known source of electrons with microtip emissive cathodes, which is described in detail in the document (2) mentioned above.
- This known source has a matrix structure and comprises a substrate 2, for example made of glass, on which a thin layer of silica 4 is optionally formed.
- This source also includes, on this layer of silica 4, a plurality of electrodes 5 in the form of parallel conductive strips which act as cathode conductors and constitute the columns of the matrix structure.
- the cathode conductors are each covered by a resistive layer 7 which can be discontinuous or continuous (except at its ends, to allow the connection of the cathode conductors with polarization means 20).
- insulating layer 8 Above the insulating layer 8 are formed a plurality of electrodes 10 also in the form of parallel conductive strips.
- Electrodes 10 are generally perpendicular to the electrodes 5 and play the role of grids which constitute the lines of the matrix structure.
- a resistive layer can optionally be placed above or below the electrodes 10.
- At least one of the series of electrodes (cathode conductors or grids) is associated with a resistive layer and each electrode of this series has a lattice structure or mesh structure .
- the document (3) recommends using cathode conductors in the form of a lattice so that the microtips are arranged in the openings of the lattices of these cathode conductors.
- the breakdown resistance of a microtip no longer depends, in the first order, on the thickness of the resistive layer but on the distance between this microtip and the corresponding cathode conductor.
- This further improvement aims to reduce the risk of short circuit between the rows and columns of the source.
- FIG. 2 is a schematic and partial top view of an electron source described in this document (4) and FIG. 3 is an enlarged view in section along the axis III-III of FIG. 2.
- This known source with a matrix structure comprises a substrate 1, for example made of glass, and possibly a thin layer 6 of silica on this substrate 1.
- silica layer 6 On the silica layer 6 is formed a series of parallel electrodes 3, playing the role of cathode conductors, each of these electrodes having a lattice structure.
- cathode conductors 3 are covered by a resistive layer 9 made of silicon, itself covered by an electrically insulating layer 11 made of silica.
- this insulating layer 11 is formed another series of parallel electrodes also having a perforated but different structure, this structure being designed to minimize the areas of overlap with the cathode conductors.
- Electrodes formed above the insulating layer 11 are generally perpendicular to the cathode conductors and constitute the grids 13 of the source.
- Figures 2 and 3 show a detail of one of the grids of this source known from document (4).
- This grid bearing the general reference 13, comprises parallel tracks 14 orthogonally cutting other parallel tracks 15.
- the grid has enlarged zones 17 which here have a square shape.
- the enlarged zones 17 are located in the center of the meshes of the cathode conductor in the form of a lattice.
- holes or more exactly micro-holes 18 are preferably formed in the thickness of the enlarged zones of the grid and in the thickness of the insulating layer 11.
- microtips 19 of the source are arranged in these holes and rest on the resistive layer 9.
- a set consisting of a microtip and a micro-hole forms a micro-emitter of electrons.
- the electron microemitters occupy the central regions of the meshes of the mesh of the cathode conductor as well as the enlarged and square zones 17 of the grid.
- the mesh of the trellis can have different shapes and different dimensions.
- they can be square and have a side of 25 microns.
- the number of holes and spikes in each mesh may also vary.
- microtips are from the cathode conductor, the longer the distance between them, the higher the electrical resistance (due to the resistive layer) through which these microtips are connected to the cathode conductor and therefore the more current electric powering these microtips is weak.
- the electrical resistance r1 of the microtips situated at the edge of the group of microtips corresponding to a mesh of the cathode conductor has been represented symbolically, and the electrical resistance r2 of the microtips located at the center of this group of microtips, r2 being greater than r1 .
- the microtips located in the center of the group which are further from the cathode conductor than the microtips located at the edge of this group, emit less electrons than the latter.
- the object of the present invention is to remedy this drawback.
- It aims to improve the uniformity of the emission of electrons by the microtips located inside the meshes (or more generally opposite the meshes) of electrodes with lattice structure, in an electron source with emissive cathodes with microtips.
- each electrically conductive element is located inside the mesh corresponding to this element.
- each electrically conductive element is equal to the thickness of the electrodes having a lattice structure with which this element is associated.
- the electrodes which have the trellis structure and which are associated with the electrically conductive elements are the electrodes of the first series of electrodes.
- each electrically conductive element is inside the mesh corresponding to this element
- the electrodes having the lattice structure are located under the resistive layer and each electrically conductive element is also under this layer resistive and under the group of microtips corresponding to this element.
- the electrodes which have the lattice structure and which are associated with the electrically conductive elements are the electrodes of the second series of electrodes.
- each electrically conductive element is inside the mesh corresponding to this element
- the electrodes having the lattice structure are on the resistive layer and each electrically conductive element is also on this layer resistive and above the group of microtips corresponding to this element and includes a hole opposite each microtip of this group.
- microtip source according to the invention which is schematically and partially shown in plan view in FIG. 4 and in enlarged section in FIG. 5 (which is section III-III in FIG. 4) is identical to the source which has been described with reference to Figures 2 and 3 except that it includes in addition to the elements electrically conductive 3a respectively placed inside the meshes of the cathode conductors 3.
- These electrically conductive elements 3a aim to improve the uniformity of the emission of electrons by standardizing the access resistance to the microtips inside each mesh.
- each electrically conductive element 3a constitutes an independent plate of electrically conductive material, located in the center of each mesh, under the resistive layer 9, in contact with the silica layer 6 and under the group of microtips 19 corresponding to this mesh.
- this plate 3a preferably occupies a surface slightly larger than that which is covered by this group of microtips as seen in FIGS. 4 and 5.
- These plates 3a are advantageously produced during the same photolithography step as that during which the cathode conductors 3 are formed, and from the same photomask and the same metallic layer as those which are used for the manufacture of these cathode conductors (the thickness of the plates 3a thus being equal to the thickness of the cathode conductors).
- FIG. 5 shows symbolically the electrical resistances r3 connecting each plate 3a to the tracks of the corresponding lattice as well as the resistors r4 between the microtips and these plates 3a respectively.
- plates 3a makes it possible to obtain the same electrical resistance r3 + r4 under each of the microtips (r3 + r4 representing the access resistance to the microtips), hence a better uniformity of electron emission from these microtips.
- This electrical resistance of access to the microtips depends, in the first order, on the distance between the conductive plate 3a and the tracks of the corresponding lattice.
- square conductive plates of 15 ⁇ m side can be used and 0.4 ⁇ m thick (the thickness of the cathode conductors also being 0.40 ⁇ m in this example).
- the dimensions of the conductive plates are adjusted as a function of the resistivity and of the thickness of the resistive layer 9 and also as a function of the alignment tolerance between the levels of formation of the cathode conductors and of the micro-holes.
- FIGS. 4 and 5 show a grid with an openwork structure, but of course the invention also applies to a source having respectively full grids.
- microtip electron source Another example of a microtip electron source is known from document (4) and schematically and partially represented in section in FIG. 6.
- each cathode conductor 22 is formed on the silica layer 6 and is thus located under the resistive layer 9 and has, in top view, the same forms that the electrode 13 of FIGS. 4 and 5, except that this cathode conductor has no hole at the level of the microtips which are carried by the resistive layer 9.
- a resistive layer 24 is formed on the insulating layer and provided with holes 26 opposite the microtips, to allow the electrons emitted by them to pass during the excitation of the source.
- the grid 28 is formed on this resistive layer 24 and has a lattice structure of which we see, in section, tracks 28a in FIG. 6.
- cathode conductors can be used respectively forming solid strips, parallel to each other.
- the present invention also applies to the case of FIG. 6 (with perforated or solid cathode conductors) with a view in particular to standardizing the access resistance to each microtip in each mesh of the grids.
- This variant also has the advantage of standardizing the time of application of the grid-cathode conductor voltage around each microtip.
- Figure 7 schematically and partially illustrates, in section, a source according to the invention which is identical to the source described with reference to Figure 6 except that it further comprises an electrically conductive element 30 to l inside each mesh of the grids 28, opposite the group of microtips corresponding to this mesh.
- this electrically conductive element forms an independent plate, of square shape, located inside this mesh, on the resistive layer 24, above the microtip group 19.
- Each plate 30 comprises holes 32, aligned with the holes 26 and placed respectively opposite the microtips of this group.
- Each plate 30 is advantageously produced during the same step as that leading to the formation of the grids, from the same conductive layer, the plates 30 thus having the same thickness as the grids 28.
- the cathode conductors with lattice structures of FIG. 5 could be not under the resistive layer 9 but on the latter (all other things being equal).
- the grids 28 with a lattice structure of FIG. 7 could not be on the resistive layer 24 but under the latter and in contact with the insulating layer 11.
- the conductive plates 30 can be either on the resistive layer 24 as seen in FIG. 7, or under this resistive layer 24 and in contact with the insulating layer 11 (these plates 30 then being at the same level as the grids 28, inside the meshes of the latter.
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9402709 | 1994-03-09 | ||
FR9402709A FR2717304B1 (fr) | 1994-03-09 | 1994-03-09 | Source d'électrons à cathodes émissives à micropointes. |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0671755A1 true EP0671755A1 (de) | 1995-09-13 |
EP0671755B1 EP0671755B1 (de) | 1997-07-09 |
Family
ID=9460837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95400494A Expired - Lifetime EP0671755B1 (de) | 1994-03-09 | 1995-03-07 | Elektronenquelle mit Mikrospitzenemissionskathoden |
Country Status (5)
Country | Link |
---|---|
US (1) | US6043592A (de) |
EP (1) | EP0671755B1 (de) |
JP (1) | JPH0831347A (de) |
DE (1) | DE69500403T2 (de) |
FR (1) | FR2717304B1 (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0713236A1 (de) * | 1994-11-18 | 1996-05-22 | Texas Instruments Incorporated | Elektron-emittierenden Vorrichtung |
FR2739223A1 (fr) * | 1995-09-26 | 1997-03-28 | Futaba Denshi Kogyo Kk | Dispositif d'affichage a emission de champ |
FR2763173A1 (fr) * | 1997-05-07 | 1998-11-13 | Futaba Denshi Kogyo Kk | Element a emission de champ |
FR2764435A1 (fr) * | 1997-06-09 | 1998-12-11 | Futaba Denshi Kogyo Kk | Element a emission de champ |
FR2828956A1 (fr) * | 2001-06-11 | 2003-02-28 | Pixtech Sa | Protection locale d'une grille d'ecran plat a micropointes |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000215787A (ja) * | 1999-01-21 | 2000-08-04 | Nec Corp | 電界放出型冷陰極素子、その製造方法及び画像表示装置 |
US6611093B1 (en) * | 2000-09-19 | 2003-08-26 | Display Research Laboratories, Inc. | Field emission display with transparent cathode |
CA2521304A1 (en) * | 2003-04-04 | 2004-10-21 | Lumidigm, Inc. | Multispectral biometric sensor |
KR100814856B1 (ko) * | 2006-10-20 | 2008-03-20 | 삼성에스디아이 주식회사 | 발광 장치 및 표시 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2650119A1 (fr) * | 1989-07-21 | 1991-01-25 | Thomson Tubes Electroniques | Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation |
US4990766A (en) * | 1989-05-22 | 1991-02-05 | Murasa International | Solid state electron amplifier |
WO1991012624A1 (en) * | 1990-02-09 | 1991-08-22 | Motorola, Inc. | Cold cathode field emission device with integral emitter ballasting |
EP0461990A1 (de) * | 1990-06-13 | 1991-12-18 | Commissariat A L'energie Atomique | Elektronenquelle mit Mikropunktkathoden |
EP0558393A1 (de) * | 1992-02-26 | 1993-09-01 | Commissariat A L'energie Atomique | Elektronenquelle mit Mikropunktkathoden und Anzeigevorrichtung mit Kathodolumineszenz erregt durch Feldemission unter Anwendung dieser Quelle |
EP0572170A1 (de) * | 1992-05-28 | 1993-12-01 | AT&T Corp. | Feldemissions-flache Bildwiedergabeanordnung |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2593953B1 (fr) * | 1986-01-24 | 1988-04-29 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ |
FR2623013A1 (fr) * | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
US5329207A (en) * | 1992-05-13 | 1994-07-12 | Micron Technology, Inc. | Field emission structures produced on macro-grain polysilicon substrates |
US5541466A (en) * | 1994-11-18 | 1996-07-30 | Texas Instruments Incorporated | Cluster arrangement of field emission microtips on ballast layer |
US5536993A (en) * | 1994-11-18 | 1996-07-16 | Texas Instruments Incorporated | Clustered field emission microtips adjacent stripe conductors |
-
1994
- 1994-03-09 FR FR9402709A patent/FR2717304B1/fr not_active Expired - Fee Related
-
1995
- 1995-03-07 EP EP95400494A patent/EP0671755B1/de not_active Expired - Lifetime
- 1995-03-07 DE DE69500403T patent/DE69500403T2/de not_active Expired - Fee Related
- 1995-03-08 US US08/401,134 patent/US6043592A/en not_active Expired - Fee Related
- 1995-03-09 JP JP5000795A patent/JPH0831347A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4990766A (en) * | 1989-05-22 | 1991-02-05 | Murasa International | Solid state electron amplifier |
FR2650119A1 (fr) * | 1989-07-21 | 1991-01-25 | Thomson Tubes Electroniques | Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation |
WO1991012624A1 (en) * | 1990-02-09 | 1991-08-22 | Motorola, Inc. | Cold cathode field emission device with integral emitter ballasting |
EP0461990A1 (de) * | 1990-06-13 | 1991-12-18 | Commissariat A L'energie Atomique | Elektronenquelle mit Mikropunktkathoden |
EP0558393A1 (de) * | 1992-02-26 | 1993-09-01 | Commissariat A L'energie Atomique | Elektronenquelle mit Mikropunktkathoden und Anzeigevorrichtung mit Kathodolumineszenz erregt durch Feldemission unter Anwendung dieser Quelle |
EP0572170A1 (de) * | 1992-05-28 | 1993-12-01 | AT&T Corp. | Feldemissions-flache Bildwiedergabeanordnung |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0713236A1 (de) * | 1994-11-18 | 1996-05-22 | Texas Instruments Incorporated | Elektron-emittierenden Vorrichtung |
FR2739223A1 (fr) * | 1995-09-26 | 1997-03-28 | Futaba Denshi Kogyo Kk | Dispositif d'affichage a emission de champ |
FR2763173A1 (fr) * | 1997-05-07 | 1998-11-13 | Futaba Denshi Kogyo Kk | Element a emission de champ |
FR2764435A1 (fr) * | 1997-06-09 | 1998-12-11 | Futaba Denshi Kogyo Kk | Element a emission de champ |
FR2828956A1 (fr) * | 2001-06-11 | 2003-02-28 | Pixtech Sa | Protection locale d'une grille d'ecran plat a micropointes |
Also Published As
Publication number | Publication date |
---|---|
DE69500403T2 (de) | 1998-01-22 |
FR2717304B1 (fr) | 1996-04-05 |
EP0671755B1 (de) | 1997-07-09 |
FR2717304A1 (fr) | 1995-09-15 |
US6043592A (en) | 2000-03-28 |
DE69500403D1 (de) | 1997-08-14 |
JPH0831347A (ja) | 1996-02-02 |
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