EP1476888B1 - Kathodenstruktur für einen bildschirm - Google Patents

Kathodenstruktur für einen bildschirm Download PDF

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Publication number
EP1476888B1
EP1476888B1 EP03717409A EP03717409A EP1476888B1 EP 1476888 B1 EP1476888 B1 EP 1476888B1 EP 03717409 A EP03717409 A EP 03717409A EP 03717409 A EP03717409 A EP 03717409A EP 1476888 B1 EP1476888 B1 EP 1476888B1
Authority
EP
European Patent Office
Prior art keywords
cathode
layer
electron emitting
grid electrode
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP03717409A
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English (en)
French (fr)
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EP1476888A1 (de
Inventor
Jean Dijon
Adeline Fournier
Brigitte Montmayeul
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)

Definitions

  • the present invention relates to a cathode structure for use in a field emission flat screen.
  • a cathodoluminescence display device excited by field emission comprises a cathode or electron-emitting structure and a facing anode covered with a luminescent layer.
  • the anode and the cathode are separated by a space where the vacuum has been made.
  • the cathode is either a source based on micro-peaks, or a source based on a low threshold field emissive layer.
  • the emissive layer may be a layer of carbon nanotubes or other structures based on carbon or based on other materials or multilayers (AlN, BN).
  • the structure of the cathode may be diode or triode type.
  • the document FR-A-2,593,953 (corresponding to US Patent No. 4,857,161 ) discloses a method of manufacturing a cathodoluminescence display device excited by field emission.
  • the structure of the cathode is of the triode type.
  • the electron-emitting material is deposited on an apparent conductive layer at the bottom of holes made in a layer insulation which supports an electron extraction grid.
  • the figure 1 is a cross-sectional view schematically of a triode-type cathode structure according to the known art, for a field emission excited cathodoluminescence display device.
  • a single transmission device is shown in this figure.
  • a layer 1 of electrically insulating material is pierced with a circular hole 2.
  • a conductive layer 3 supporting a layer 4 of electron-emitting material.
  • the upper face of the insulating layer 1 supports a metal layer 5 forming extraction grid and surrounding the hole 2.
  • the emitting layer 4 tends to cause short circuits between the gate 5 and the conductive layer or cathode 3. This tendency manifests itself in particular if the emissive layer consists of carbon nanotubes.
  • the electric field which is maximum at the edge of the hole, has a lateral component E L (parallel to the plane of the cathode) important (comparable to the perpendicular component E x of the electric field) which diverges the electron beam and induces resolution problems at the screen.
  • E L parallel to the plane of the cathode
  • E x perpendicular component
  • JP-A-2001 043792 discloses an electron-emitting source made by laminating an insulating substrate, a cathode conductor and a pasty carbon layer containing carbon nanotubes.
  • the laminated structure is dried and heat treated.
  • Emitters with carbon nanotubes are produced by cutting the carbon layer.
  • Insulating ribs are attached to the insulating substrate to support gate electrodes.
  • the document JP-A-07 249 368 discloses a field emission element made from a silicon substrate. A plurality of emitters are made from the silicon substrate and exposed by a slot made in a control electrode, these emitters being aligned along the longitudinal axis of the slot.
  • a field emission cathode array having a first cathode electrode offset in the stack with respect to the field emission cathode.
  • JP-A-2001 101 966 discloses an emissive screen cathode structure having all the features of the preamble of claim 1.
  • triode-type emitting layer cathode structure for which the electrons emitted by the emitting layer are subjected to a weak lateral electric field, which minimizes the risks of short-circuit between the gate and the cathode and this which limits the divergence of the electron beam emitted by the emitting layer.
  • the subject of the invention is therefore a triode type cathode structure formed by a stack made on a support, the stack comprising a cathode electrode electrically connected, by a resistive layer, to electron emitting means comprising nanotubes of carbon, the stack also comprising a gate electrode provided with an opening exposing the electron-emitting means, the gate electrode being supported by the support by means of an electrical insulator, characterized in that the opening of the gate electrode is a slot, the electron emitting means exposed by the slot being constituted by at least two elements aligned along the longitudinal axis of the slot and separated from one another, the cathode electrode being offset in the stack relative to the electron emitting means so that they are not located above the cathode electrode.
  • the opening made in the gate electrode and in the electrical insulating layer being substantially rectangular, said electron-emitting material elements are also substantially rectangular.
  • the electron-emitting material elements are separated from the gate electrode by a distance greater than the size of the objects constituting the electron-emitting material.
  • the invention also relates to a flat field emission screen comprising a plurality of cathode structures as defined above.
  • the figure 2 is a schematic sectional view of a cathode structure of the triode type not forming part of the invention.
  • This cathode structure comprises, in superposition, a conductive layer or cathode 13 supporting a layer 11 of electrically insulating material and a metal layer 15 forming an electron extraction grid.
  • the insulating layer 11 and the metal layer 15 are pierced with a slot 12 exposing the cathode 13 and of width L.
  • elements of material electron emitter 14 In the central part of the slot 12, and along the longitudinal axis of the slot, are arranged elements of material electron emitter 14 in the form of a layer (only one element is visible in the figure).
  • the width d of the emissive elements 14 is small relative to the width L of the slot 12.
  • the distance separating the metal layer 15 from the emitting elements 14 is called S.
  • the slot 12 may be of rectangular shape.
  • the figure 3 is a partial top view of the cathode structure shown in FIG. figure 2 in the case where the slot 12 is of rectangular shape.
  • the slot 12 is then agorge of width L and whose dimension along the Z axis is that of the pixel of the screen.
  • This slot geometry is more favorable than the circular geometry. Indeed, by reason of symmetry, there is no lateral component of the electric field along the Z axis, therefore the emissive surface satisfying the condition E L ⁇ E x is larger in this geometry than in the cylindrical geometry .
  • the ratio between the emitting surface and the surface of the hole is (d / L) 2 .
  • this ratio is d / L. As d / L is less than 1, the ratio d / L is always greater than (d / L) 2, which corresponds to a much brighter display.
  • Another advantageous embodiment is that where a resistive layer is added between the emitting layer and the cathode.
  • the resistive layer protects the gate and the cathode from a possible short circuit.
  • this resistive layer is very favorable to the operation of the screen like this is announced in the document EP-A-0 316 214 (corresponding to US Patent No. 4,940,916 ).
  • the figure 4 is a schematic sectional view of a cathode structure of triode type according to the invention with a protective resistive layer.
  • This cathode structure comprises, in superposition, a cathode 23 supporting a resistive layer 26, an insulating layer 21 and a metal layer 25 forming an electron extraction grid.
  • a slot 22 exposes the resistive layer 26. In the central part of the slot 22, and along the longitudinal axis of the slot, elements of emissive material 24 rest on the resistive layer 26. Only one element is visible in the figure.
  • the emitting zone is located in the center of the slot or throat, on a narrow width, allows a directional emission of electrons and provides a solution to resolution problems. This comes from the very low value of the parallel component of the electric field (E L / E x ⁇ 0.1) in the area where the emitting elements are located.
  • the diagram of the figure 5 shows the spatial distribution of the electric field for a cathode structure according to the invention.
  • the diagram is drawn along the Y axis, the emissive element 24 and the resistive layer 26 being represented on the diagram.
  • the spatial distribution of the electric field E is calculated for a hole width L equal to 14 ⁇ m.
  • the lateral component E y referenced 31 is less than 10 times the minimum value of the normal component referenced 32.
  • the lateral field referenced 33 and 34 becomes of intensity comparable to the normal field.
  • the calculation is done for a voltage of 60 V on the grid.
  • Grid-cathode short-circuit problems are eliminated by the central location and reduced size of the emitting elements with respect to the size of the groove or slot and the possible presence of a resistive layer.
  • the electric field induced by the grid is uniform and has only very weak lateral components with respect to the vertical component of the field.
  • a minimum value can be found empirically for the distance S separating the metallic grid layer from the emitting elements (see figure 2 ). This distance is greater than the size h of the objects constituting the emissive layer.
  • This is schematically represented on the figure 6 or the reference 43 designates a cathode and the reference 44 an emitting layer.
  • the emitting layer 44 is for example made up of carbon nanotubes 48.
  • the distance S is greater than the average length h of the carbon nanotubes. Given the large dispersions of the lengths of the nanotubes, it is preferable to multiply this distance by a factor of the order of 2 or 3.
  • the distance S may be of the order of 3 to 4 ⁇ m. These values are merely indicative and not limiting. It can be verified that for these dimensions the lateral component of the electric field is very small compared to the normal component.
  • FIGS. 7A to 7F illustrate a first method of producing a cathode structure of triode type according to the invention, this method using vacuum deposition techniques and photolithography.
  • the cathode conductor is obtained by depositing a conductive material, for example molybdenum, niobium, copper or ITO, on a support 50 (see FIG. Figure 7A ).
  • a conductive material for example molybdenum, niobium, copper or ITO.
  • the deposition of conductive material is etched in strips, typically 10 .mu.m wide and not equal to 25 .mu.m.
  • the Figure 7A shows two bands that will be associated to form a cathode electrode 53.
  • a resistive layer 56 having a thickness of 1.5 ⁇ m in amorphous silicon, then an insulating layer 51 of 1 ⁇ m in thickness made of silica or silicon nitride, and finally a metal layer 55 made of niobium or molybdenum intended to form the electron extraction grid.
  • the metal layer 55 and the insulating layer 51 are then etched simultaneously with a slit or trench 52 with a width of 15 ⁇ m until the resistive layer 56 is exposed. This is shown in FIG. Figure 7C .
  • the Figure 7D shows the structure obtained after the deposition of a sacrificial layer 57 of resin and the formation in the layer 57 of openings 58, of 6 ⁇ m wide and 10 to 15 ⁇ m in length, exposing the resistive layer 56.
  • the openings 58 have a width corresponding to the width of the emitting layer to be produced.
  • a catalytic deposit of iron, cobalt or nickel is then made on the structure.
  • the catalytic deposition may be advantageously replaced by the deposition of a growth multilayer which may be for example a stack comprising TiN or TaN and a catalyst material such as Fe, Co, Ni or Pt. As shown in FIG. figure 7E this catalytic deposition causes the formation of a discontinuous growth layer 59 on the sacrificial layer 57 and on the exposed portion of the resistive layer 56.
  • the sacrificial layer is then removed by a "lift-off" technique, which causes the elimination of the parts of the growth layer located on this sacrificial layer. Parts of the growth layer remain in the central part of the resistive layer 56. This allows the growth of emissive layers 54.
  • the figure 7F shows only one element.
  • FIGS. 8A to 8F illustrate a second method of producing a cathode structure of triode type according to the invention, this method using vacuum deposition techniques and photolithography. This is an auto-aligned process.
  • the cathode conductor is obtained by depositing a conductive material, for example molybdenum, niobium, copper or ITO, on a support 150 (see FIG. figure 8A ).
  • a conductive material for example molybdenum, niobium, copper or ITO.
  • the deposit of material is etched into strips, typically 10 ⁇ m wide and not greater than 25 ⁇ m.
  • the figure 8A shows two bands that will be associated to form a cathode electrode 153.
  • a resistive layer 156 having a thickness of 1.5 ⁇ m in amorphous silicon, then an insulating layer 151 of 1 ⁇ m in thickness made of silica or silicon nitride, and finally a metal layer 155 made of niobium or molybdenum intended to form the electron extraction grid.
  • each opening 158 may be 6 .mu.m and its length 15 .mu.m. This is what the Figure 8C .
  • Lateral etching of the insulating layer 151 is then performed from the trench 158 to obtain the desired slot 152. This is what the figure 8D .
  • a part of the sacrificial layer 157 is then cantilevered above the slot 152.
  • the slot and the grid are then self-aligned with respect to the emissive zones.
  • the figure 8E represents the structure obtained after the deposition of a layer of catalyst material 159.
  • the deposition takes place on the sacrificial layer 157 and on the exposed portion of the resistive layer 156.
  • the catalyst may be iron, cobalt or nickel.
  • the catalytic deposition may be advantageously replaced by the deposition of a growth multilayer which may be for example a stack comprising TiN or TaN and a catalyst material such as Fe, Co, Ni or Pt.
  • the sacrificial layer is then subjected to a "lift-off" operation, which has the consequence of eliminating the portion of the layer of catalyst material supported by the sacrificial layer. Parts of the growth layer remain on the central part of the resistive layer 156. This allows the growth of emissive layers 154.
  • the figure 8F shows only one element.
  • the figure 9 is a more complete top view of a cathode structure of triode type according to the invention. This structure was obtained by the second embodiment method.
  • the slots thus produced are not perfectly rectangular. They are slightly scalloped, which does not affect the operation of the device.

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Overhead Projectors And Projection Screens (AREA)

Claims (4)

  1. Kathodenstruktur des Triodentyps, gebildet durch einen auf einem Träger (50, 150) realisierten Stapel, wobei der Stapel eine Elektrode umfasst, welche die Kathode (23, 53, 153) bildet und durch eine resistive Schicht (26, 56, 156) elektrisch verbunden ist mit Kohlenstoff-Nanoröhrchen umfassenden elektronenemittierenden Einrichtungen (24, 54, 154), wobei der Stapel auch eine Gateelektrode (25, 55, 155) umfasst, versehen mit einer die elektronenemittierenden Einrichtungen offenlegenden Öffnung (22, 52, 152), und die Gateelektrode durch den Träger getragen wird mittels eines elektrischen Isolators (21, 51, 151),
    dadurch gekennzeichnet, dass die Gateelektrodenöffnung ein Schlitz ist, die durch den Schlitz offengelegten elektronenemittierenden Einrichtungen durch wenigstens zwei entsprechend der Längsachse des Schlitzes ausgerichtete und voneinander getrennte Elemente gebildet werden, wobei die die Kathode bildende Elektrode (23, 53, 153) in dem Stapel so versetzt ist in Bezug auf die elektronenemittierenden Einrichtungen (24, 54, 154), dass diese sich nicht über der die Kathode bildenden Elektrode befinden.
  2. Kathodenstruktur nach Anspruch 1, dadurch gekennzeichnet, dass die in der Gateelektrode (25, 55, 155) und in der elektrisch isolierenden Schicht (21, 51, 151) realisierte Öffnung im Wesentlichen rechteckig ist, die genannten Elemente aus elektronenemittierendem Material (24, 54, 154) ebenfalls im Wesentlichen rechteckig sind.
  3. Kathodenstruktur nach einem der Ansprüche 1 oder 2, dadurch gekennzeichnet, dass die Elemente aus elektronenemittierendem Material von der Gateelektrode durch einen Abstand getrennt sind, der größer ist als die Größe der das elektronenemittierende Material (44) bildenden Objekte (48).
  4. Feldemissions-Flachbildschirm, dadurch gekennzeichnet, dass er eine Vielzahl von Kathodenstrukturen nach einem der Ansprüche 1 bis 3 umfasst.
EP03717409A 2002-02-19 2003-02-18 Kathodenstruktur für einen bildschirm Expired - Lifetime EP1476888B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0202075 2002-02-19
FR0202075A FR2836279B1 (fr) 2002-02-19 2002-02-19 Structure de cathode pour ecran emissif
PCT/FR2003/000530 WO2003071571A1 (fr) 2002-02-19 2003-02-18 Structure de cathode pour ecran emissif

Publications (2)

Publication Number Publication Date
EP1476888A1 EP1476888A1 (de) 2004-11-17
EP1476888B1 true EP1476888B1 (de) 2010-06-30

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EP03717409A Expired - Lifetime EP1476888B1 (de) 2002-02-19 2003-02-18 Kathodenstruktur für einen bildschirm

Country Status (9)

Country Link
US (1) US7759851B2 (de)
EP (1) EP1476888B1 (de)
JP (2) JP2005518636A (de)
KR (1) KR100944731B1 (de)
CN (1) CN1316533C (de)
AT (1) ATE472820T1 (de)
DE (1) DE60333168D1 (de)
FR (1) FR2836279B1 (de)
WO (1) WO2003071571A1 (de)

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CN1316533C (zh) 2007-05-16
WO2003071571A1 (fr) 2003-08-28
EP1476888A1 (de) 2004-11-17
KR100944731B1 (ko) 2010-03-03
JP5425753B2 (ja) 2014-02-26
US7759851B2 (en) 2010-07-20
WO2003071571A8 (fr) 2004-04-29
FR2836279B1 (fr) 2004-09-24
JP2005518636A (ja) 2005-06-23
DE60333168D1 (de) 2010-08-12
KR20040079404A (ko) 2004-09-14
JP2011103303A (ja) 2011-05-26
CN1552084A (zh) 2004-12-01
US20040256969A1 (en) 2004-12-23
FR2836279A1 (fr) 2003-08-22
ATE472820T1 (de) 2010-07-15

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