EP0558393A1 - Elektronenquelle mit Mikropunktkathoden und Anzeigevorrichtung mit Kathodolumineszenz erregt durch Feldemission unter Anwendung dieser Quelle - Google Patents

Elektronenquelle mit Mikropunktkathoden und Anzeigevorrichtung mit Kathodolumineszenz erregt durch Feldemission unter Anwendung dieser Quelle Download PDF

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Publication number
EP0558393A1
EP0558393A1 EP93400449A EP93400449A EP0558393A1 EP 0558393 A1 EP0558393 A1 EP 0558393A1 EP 93400449 A EP93400449 A EP 93400449A EP 93400449 A EP93400449 A EP 93400449A EP 0558393 A1 EP0558393 A1 EP 0558393A1
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EP
European Patent Office
Prior art keywords
electrodes
series
source
openings
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP93400449A
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English (en)
French (fr)
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EP0558393B1 (de
Inventor
Robert Chemin De La Limite Meyer
Thierry Leroux
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/15—Cathodes heated directly by an electric current
    • H01J1/16—Cathodes heated directly by an electric current characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Definitions

  • the invention applies in particular to the field of visualization and, more particularly, to flat screens.
  • FIG. 1A An exemplary embodiment of this known electron source is schematically represented in top view in FIG. 1A and in sectional view in FIG. 1B which is the section CC of FIG. 1A.
  • This known source has a matrix structure and comprises a substrate 2, for example made of glass and possibly, on this substrate 2, a thin layer of silica 4.
  • silica 4 On this layer of silica 4 is formed a series of electrodes in the form of parallel conductive strips playing the role of cathode conductors and constituting the columns of the matrix structure.
  • FIGS. 1A and 1B One of these cathode conductors, which bears the reference 5, can be seen in FIGS. 1A and 1B.
  • the cathode conductors are each covered by a resistive layer 7.
  • An electrically insulating layer 8 of silica covers the resistive layers 7.
  • insulating layer 8 Above the insulating layer 8 is formed a series of electrodes which are also in the form of parallel conductive strips and one of which appears in FIGS. 1A and 1B and bears the reference 10.
  • Electrodes formed above the insulating layer 8 are perpendicular to the cathode conductors and play the role of grids which constitute the lines of the matrix structure.
  • the known source also comprises a plurality of microtips which constitute elementary emitters of electrons.
  • the resistive layer 7 corresponding to this zone supports microtips 12 and the grid corresponding to this zone has a hole 14 opposite each of the microtips.
  • Each of the latter substantially follows the shape of a cone, the base of which rests on the resistive layer 7 and the top of which is situated at the level of the corresponding opening 14.
  • the insulating layer 8 is also provided with openings 15 allowing the passage of the microtips 12.
  • each of the electrodes of one of the two electrode streaks has a lattice structure in contact with a resistive layer.
  • each cathode conductor has this trellis structure and thus comprises conductive tracks 5a which intersect.
  • each cathode conductor has openings 6 which are delimited by these tracks 5a.
  • microtips occupy central regions of the mesh of the lattice.
  • the electrodes of the other series have a continuous structure (ignoring the holes 14 of small diameter arranged opposite the microtips 12).
  • Electrodes with a lattice structure is intended to minimize the risks of breakdown at the level of the microtips, by limiting the electric current in them, and therefore avoid the formation of short circuits between the rows and the columns via these microtips.
  • the surface of the overlap zones is equal to the surface of the electrodes with a lattice structure.
  • the present invention aims to reduce the risk of short circuits more than does this known source and, to do this, proposes to reduce the overlap areas of the two sets of electrodes even more significantly than in the source known from document (3).
  • the source object of the present invention comprising the first series of electrodes and the second series of electrodes which have been mentioned above, is characterized by the fact that the second openings are offset from the first openings and thus placed opposite the lattice tracks, the first and second openings are therefore not superimposed.
  • each discontinuous electrode must be such that it makes it possible to apply the electric field to the corresponding microtips.
  • each discontinuous electrode is preferably given as small a surface as possible and a structure which minimizes the areas of overlap with the lattice structure electrode. corresponding.
  • the second openings are placed opposite the intersections of the lattice tracks.
  • the electrodes having the lattice structure are the electrodes of the second series of electrodes and the discontinuous electrodes are the electrodes of the first series of electrodes.
  • the electrodes having the lattice structure are the electrodes of the first series of electrodes and the discontinuous electrodes are the electrodes of the second series of electrodes.
  • the resistive layer and the support on which the first series of electrodes is formed are at least partially transparent to the light emitted by the cathodoluminescent material under the impact of electrons, in order to observe this cathodoluminescent material through this support. .
  • the cathodoluminescent anode comprises an electrode which is capable of reflecting the light emitted by the layer of cathodoluminescent material, the latter being formed on this electrode and facing the second series of electrodes.
  • each of the electrodes of the first and second series of electrodes is formed on a layer which is capable of adsorb light coming from outside the device.
  • Figure 2A is a schematic top view of an electron source according to the invention and Figure 2B is a schematic sectional view, along DD, of this source.
  • This source according to the invention simply differs from the known source which is represented in FIGS. 1A and 1B by the fact that its grids are discontinuous electrodes.
  • the cathode conductors 5 of the source of FIGS. 2A and 2B still have a lattice structure while the grids 10g of this source have openings 11 which make these grids discontinuous or perforated.
  • openings 11 are opposite the areas of crossing of the conductive tracks 5a of the trellis and are even centered on these zones, seen from above, as seen in FIG. 2A.
  • the grids also have holes 14a respectively opposite the microtips 12 of the source.
  • each grid 10g from the source of FIGS. 2A and 2B has a sensiblenent structure of a trellis identical to the trellis of the corresponding cathode conductor, but the trellis of this grid is offset, relative to the trellis of the cathode conductor, by half-step parallel to the lines and half-step parallel to the columns of the source and, above an area where micro-tips are gathered, this grid has, when viewed from above, a square surface 10a which is pierced by the holes 14a and to which end four tracks 10b forming part of the lattice of this grid.
  • This square surface is less than the surface of the opening 6 opposite which it is located.
  • FIG. 3 a sectional view of which is schematically shown in FIG. 3, it is the grids which have a lattice structure while the cathode conductors form discontinuous electrodes.
  • each cathode conductor 18 is formed on the layer 4, and is thus located under the resistive layer 7, and has, in top view, the same forms that the electrode 10g of FIGS. 2A and 2B, except that this cathode conductor has no hole at the level of the microtips which are carried by the resistive layer 7.
  • a resistive layer 20 is formed on the insulating layer 8 and provided with holes 21 opposite the microtips to allow the electrons emitted by it to pass during the excitation of the source.
  • the grid 22 corresponding to the cathode conductor 10g is formed on this resistive layer 20 and has a lattice structure of which we see, in section, tracks 22a in FIG. 3.
  • each conductor with a lattice structure can be either above the corresponding resistive layer (case of FIG. 3) or below this resistive layer (case of Figure 2B).
  • a source according to the invention has, compared to the source known in document (3), the essential advantage of reducing the probability of short circuit between the rows and columns of the source and therefore improving the efficiency source manufacturing.
  • a source according to the invention also has a very important advantage: it makes it possible to reduce the capacity between the rows and the columns in a proportion which is appreciably identical to that of the reduction in the surface of the electrode which is made discontinuous.
  • cathodoluminescence (more simply called screen cathodoluminescent) that is carried out with a microtip electron source, electrical consumption, a large part of which is the capacitive consumption of the electron source.
  • a known cathodoluminescent screen is schematically represented in section in FIG. 4.
  • This known screen includes a microtip electron source 24 of which the insulating substrate 26, the resistive layer 28, the microtips 12, the insulating layer 8 and a grid 10 can be seen.
  • a space 30 in which a vacuum has been created separates this microtip source 24 from an electrically insulating and transparent substrate 32 which is provided with an electrically conductive and transparent layer 34 forming an anode.
  • the latter is arranged facing the microtip source 24 and coated, opposite this source, with a layer 36 of a cathodoluminescent material, also called a "phosphor".
  • this layer 36 emits light 38 which a user 40 of the screen observes through the transparent substrate 32.
  • FIG. 5 which has been represented in FIG. 5 and which comprises an electron source 42 for example of the kind of that of FIGS. 2A and 2B from which we see the substrate 2, the layer silica 4, a cathode conductor 5, the resistive layer 7, the insulating layer 8, the microtips 12 and a grid 10g.
  • the additional advantage is as follows: if the resistive layer 7 is transparent to the light 50 emitted by the phosphor 48 under the impact of the electrons coming from the microtips 12, which is obtained by producing this resistive layer in SnO2 for example , then the electron source 22 according to the invention may have a high transmission coefficient, greater than 50%, vis-à-vis this light 50.
  • a new screen structure can be produced in which the phosphor 48 is observed on the excitation side thereof, through the microtip source (the silica layers 4 and 8 are transparent to light 50 and the substrate 2 is for example made of glass to be it too).
  • a layer capable of reflecting the light 50 emitted by the phosphor is preferably chosen as the conductive layer 46.
  • each cathode conductor and each grid are preferably formed on a sublayer 52 capable of adsorbing the outside light 54 on the screen, as seen in the example shown in Figure 6.
  • This external light 54 is thus adsorbed instead of being reflected towards the observer.
  • the width d of the conductive tracks 5a forming the trellis is 2 micrometers.
  • a network of sixteen microtips 12 is produced in the center of the mesh of the lattice.
  • the distance a between two microtips is 3 micrometers.
  • the distance r between this microtip network and the tracks is 7 micrometers.
  • the grid 10g which is associated with the cathode conductor 5 and which can be seen in FIG. 7B has an openwork surface and this grid includes square conductors 10a whose sides d1 are 11 micrometers and which are positioned in the center of the meshes of the lattice of so as to cover the microtip networks.
  • All these square conductors are interconnected by conductive tracks 10b whose width d2 is 2 micrometers.
  • each square conductor is supplied by four conductive tracks, which makes the probability of having a non-supplied square conductor very low.
  • the surface of the overlap zones 16 between a cathode conductor and the corresponding grid is 4 x 4 micrometers2, that is to say 16 micrometers2, instead of 200 micrometers2 in a source known by the document. (3).
  • the grid surface is thus reduced by a coefficient greater than 4 compared to a source described in document (3).
  • the capacity between the rows and the columns is therefore substantially divided by 4, which correspondingly reduces the capacitive consumption.
  • the transmission of a grid is worth approximately 75% and the transmission of a cathode conductor is worth approximately 85%.
  • the transmission of the electron source thus produced is worth approximately 60%, which makes it possible to manufacture a screen for which the phosphor is advantageously observed on the side of its excitation, through the source of electrons.
  • the cathode conductors with a lattice structure and the perforated grids are advantageously formed on an absorbent layer, to improve the contrast under illumination.
  • This adsorbent layer is for example formed by a black chromium film a few tens of nanometers thick.

Landscapes

  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
EP93400449A 1992-02-26 1993-02-22 Elektronenquelle mit Mikropunktkathoden und Anzeigevorrichtung mit Kathodolumineszenz erregt durch Feldemission unter Anwendung dieser Quelle Expired - Lifetime EP0558393B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9202220 1992-02-26
FR9202220A FR2687839B1 (fr) 1992-02-26 1992-02-26 Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source.

Publications (2)

Publication Number Publication Date
EP0558393A1 true EP0558393A1 (de) 1993-09-01
EP0558393B1 EP0558393B1 (de) 1998-05-13

Family

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Family Applications (1)

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EP93400449A Expired - Lifetime EP0558393B1 (de) 1992-02-26 1993-02-22 Elektronenquelle mit Mikropunktkathoden und Anzeigevorrichtung mit Kathodolumineszenz erregt durch Feldemission unter Anwendung dieser Quelle

Country Status (8)

Country Link
US (1) US5534744A (de)
EP (1) EP0558393B1 (de)
JP (1) JPH0684478A (de)
KR (1) KR930018613A (de)
CA (1) CA2089986A1 (de)
DE (1) DE69318444T2 (de)
FR (1) FR2687839B1 (de)
TW (1) TW386234B (de)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2710781A1 (fr) * 1993-09-27 1995-04-07 Futaba Denshi Kogyo Kk Dispositif formant cathode d'émission de champ.
EP0671755A1 (de) * 1994-03-09 1995-09-13 Commissariat A L'energie Atomique Elektronen Quelle mit Mikrospitzenemissionskathoden
EP0675519A1 (de) * 1994-03-30 1995-10-04 AT&T Corp. Vorrichtung mit Feldeffekt-Emittern
EP0707237A1 (de) 1994-10-10 1996-04-17 Commissariat A L'energie Atomique Verfahren zur Herstellung von Löchern in Photoresistschichten, Anwendung für die Herstellung von Elektronenquelle mit Mikrospitzenemissionskathoden und flachen Bildschirmen
FR2726689A1 (fr) * 1994-11-08 1996-05-10 Commissariat Energie Atomique Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence
FR2726688A1 (fr) * 1994-11-08 1996-05-10 Commissariat Energie Atomique Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence
EP0713236A1 (de) * 1994-11-18 1996-05-22 Texas Instruments Incorporated Elektron-emittierenden Vorrichtung
EP0827176A2 (de) * 1996-08-16 1998-03-04 Tektronix, Inc. Zerstäubungsfeste, leitende Überzüge mit verbesserter Elektronenemittierung für Kathodenelektroden in Gleichstromplasma-Adressierungsvorrichtungen
WO1998025291A1 (fr) * 1996-12-06 1998-06-11 Commissariat A L'energie Atomique Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source
FR2828956A1 (fr) * 2001-06-11 2003-02-28 Pixtech Sa Protection locale d'une grille d'ecran plat a micropointes

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FR2707795B1 (fr) * 1993-07-12 1995-08-11 Commissariat Energie Atomique Perfectionnement à un procédé de fabrication d'une source d'électrons à micropointes.
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JP2907024B2 (ja) * 1994-09-26 1999-06-21 関西日本電気株式会社 電子放出素子
FR2725072A1 (fr) * 1994-09-28 1996-03-29 Pixel Int Sa Protection electrique d'une anode d'ecran plat de visualisation
FR2726122B1 (fr) 1994-10-19 1996-11-22 Commissariat Energie Atomique Procede de fabrication d'une source d'electrons a micropointes
FR2726581B1 (fr) 1994-11-08 1996-12-06 Commissariat Energie Atomique Suspension pour le depot de materiaux luminescents par electrophorese, notamment pour la realisation d'ecrans plats
JP2897674B2 (ja) * 1995-02-28 1999-05-31 日本電気株式会社 電界放出型冷陰極とこれを用いた電子銃
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US5686782A (en) * 1995-05-30 1997-11-11 Texas Instruments Incorporated Field emission device with suspended gate
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US5589728A (en) * 1995-05-30 1996-12-31 Texas Instruments Incorporated Field emission device with lattice vacancy post-supported gate
US5666024A (en) * 1995-06-23 1997-09-09 Texas Instruments Incorporated Low capacitance field emission device with circular microtip array
FR2737928B1 (fr) * 1995-08-17 1997-09-12 Commissariat Energie Atomique Dispositif d'insolation de zones micrometriques et/ou submicrometriques dans une couche photosensible et procede de realisation de motifs dans une telle couche
FR2737927B1 (fr) * 1995-08-17 1997-09-12 Commissariat Energie Atomique Procede et dispositif de formation de trous dans une couche de materiau photosensible, en particulier pour la fabrication de sources d'electrons
US5635791A (en) * 1995-08-24 1997-06-03 Texas Instruments Incorporated Field emission device with circular microtip array
TW368671B (en) * 1995-08-30 1999-09-01 Tektronix Inc Sputter-resistant, low-work-function, conductive coatings for cathode electrodes in DC plasma addressing structure
JP3526673B2 (ja) * 1995-10-09 2004-05-17 富士通株式会社 電子放出素子、電子放出素子アレイ、カソード板及びそれらの製造方法並びに平面表示装置
US5672933A (en) * 1995-10-30 1997-09-30 Texas Instruments Incorporated Column-to-column isolation in fed display
US5633561A (en) * 1996-03-28 1997-05-27 Motorola Conductor array for a flat panel display
FR2751785A1 (fr) * 1996-07-29 1998-01-30 Commissariat Energie Atomique Procede et dispositif de formation de motifs dans une couche de resine photosensible par insolation laser continue, application a la fabrication de sources d'electrons a cathodes emissives a micropointes et d'ecrans plats
US5789848A (en) * 1996-08-02 1998-08-04 Motorola, Inc. Field emission display having a cathode reinforcement member
US5828163A (en) * 1997-01-13 1998-10-27 Fed Corporation Field emitter device with a current limiter structure
JPH1167128A (ja) * 1997-08-27 1999-03-09 Futaba Corp 蛍光表示管及び蛍光表示管用制御電極
US6144144A (en) * 1997-10-31 2000-11-07 Candescent Technologies Corporation Patterned resistor suitable for electron-emitting device
US6107728A (en) * 1998-04-30 2000-08-22 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having electrode with openings that facilitate short-circuit repair
EP2962645B1 (de) 2001-10-05 2020-08-12 Covidien LP Chirurgische klammervorrichtung
JP3892769B2 (ja) * 2002-07-08 2007-03-14 株式会社 日立ディスプレイズ 表示装置
TW594824B (en) * 2002-12-03 2004-06-21 Ind Tech Res Inst Triode structure of field-emission display and manufacturing method thereof
KR20060000751A (ko) * 2004-06-29 2006-01-06 삼성에스디아이 주식회사 전자방출소자 및 이를 이용한 전자방출 표시장치
KR20060104657A (ko) 2005-03-31 2006-10-09 삼성에스디아이 주식회사 전자 방출 소자
FR2886284B1 (fr) * 2005-05-30 2007-06-29 Commissariat Energie Atomique Procede de realisation de nanostructures
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TWI489507B (zh) * 2011-01-04 2015-06-21 Hon Hai Prec Ind Co Ltd 場發射電子器件及場發射顯示裝置

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FR2650119A1 (fr) * 1989-07-21 1991-01-25 Thomson Tubes Electroniques Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation
EP0461990A1 (de) * 1990-06-13 1991-12-18 Commissariat A L'energie Atomique Elektronenquelle mit Mikropunktkathoden

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WO1989011157A1 (en) * 1988-05-10 1989-11-16 Sri International Automatically focusing field emission electrode
FR2650119A1 (fr) * 1989-07-21 1991-01-25 Thomson Tubes Electroniques Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation
EP0461990A1 (de) * 1990-06-13 1991-12-18 Commissariat A L'energie Atomique Elektronenquelle mit Mikropunktkathoden

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2710781A1 (fr) * 1993-09-27 1995-04-07 Futaba Denshi Kogyo Kk Dispositif formant cathode d'émission de champ.
EP0671755A1 (de) * 1994-03-09 1995-09-13 Commissariat A L'energie Atomique Elektronen Quelle mit Mikrospitzenemissionskathoden
FR2717304A1 (fr) * 1994-03-09 1995-09-15 Commissariat Energie Atomique Source d'électrons à cathodes émissives à micropointes.
US6043592A (en) * 1994-03-09 2000-03-28 Commissariat A L'energie Atomique Microtip emissive cathode electron source having conductive elements for improving the uniformity of electron emission
EP0675519A1 (de) * 1994-03-30 1995-10-04 AT&T Corp. Vorrichtung mit Feldeffekt-Emittern
EP0707237A1 (de) 1994-10-10 1996-04-17 Commissariat A L'energie Atomique Verfahren zur Herstellung von Löchern in Photoresistschichten, Anwendung für die Herstellung von Elektronenquelle mit Mikrospitzenemissionskathoden und flachen Bildschirmen
EP0712147A1 (de) 1994-11-08 1996-05-15 Commissariat A L'energie Atomique Feldeffekt-Elektronenquelle und Verfahren zur Herstellung; Anwendung in Anzeigevorrichtungen mit Kathodolumineszenz
EP0712146A1 (de) * 1994-11-08 1996-05-15 Commissariat A L'energie Atomique Feldeffekt-Elektronenquelle und Herstellungsverfahren dazu, Anwendung in Anzeigevorrichtungen mit Kathodolumineszenz
FR2726688A1 (fr) * 1994-11-08 1996-05-10 Commissariat Energie Atomique Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence
US5836796A (en) * 1994-11-08 1998-11-17 Commissariat A L'energie Atomique Field effect electron source, associated display device and the method of production thereof
FR2726689A1 (fr) * 1994-11-08 1996-05-10 Commissariat Energie Atomique Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence
EP0713236A1 (de) * 1994-11-18 1996-05-22 Texas Instruments Incorporated Elektron-emittierenden Vorrichtung
EP0827176A2 (de) * 1996-08-16 1998-03-04 Tektronix, Inc. Zerstäubungsfeste, leitende Überzüge mit verbesserter Elektronenemittierung für Kathodenelektroden in Gleichstromplasma-Adressierungsvorrichtungen
EP0827176A3 (de) * 1996-08-16 2000-03-08 Tektronix, Inc. Zerstäubungsfeste, leitende Überzüge mit verbesserter Elektronenemittierung für Kathodenelektroden in Gleichstromplasma-Adressierungsvorrichtungen
WO1998025291A1 (fr) * 1996-12-06 1998-06-11 Commissariat A L'energie Atomique Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source
FR2756969A1 (fr) * 1996-12-06 1998-06-12 Commissariat Energie Atomique Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source
US6133690A (en) * 1996-12-06 2000-10-17 Commissariat A L'energie Atomique Display screen comprising a source of electrons with microtips, capable of being observed through the microtip support, and method for making this source
FR2828956A1 (fr) * 2001-06-11 2003-02-28 Pixtech Sa Protection locale d'une grille d'ecran plat a micropointes

Also Published As

Publication number Publication date
DE69318444D1 (de) 1998-06-18
KR930018613A (ko) 1993-09-22
DE69318444T2 (de) 1998-12-03
FR2687839B1 (fr) 1994-04-08
US5534744A (en) 1996-07-09
JPH0684478A (ja) 1994-03-25
FR2687839A1 (fr) 1993-08-27
EP0558393B1 (de) 1998-05-13
TW386234B (en) 2000-04-01
CA2089986A1 (en) 1993-08-27

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