EP0712147A1 - Feldeffekt-Elektronenquelle und Verfahren zur Herstellung; Anwendung in Anzeigevorrichtungen mit Kathodolumineszenz - Google Patents

Feldeffekt-Elektronenquelle und Verfahren zur Herstellung; Anwendung in Anzeigevorrichtungen mit Kathodolumineszenz Download PDF

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Publication number
EP0712147A1
EP0712147A1 EP95402451A EP95402451A EP0712147A1 EP 0712147 A1 EP0712147 A1 EP 0712147A1 EP 95402451 A EP95402451 A EP 95402451A EP 95402451 A EP95402451 A EP 95402451A EP 0712147 A1 EP0712147 A1 EP 0712147A1
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EP
European Patent Office
Prior art keywords
diamond
source
electrically insulating
insulating layer
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP95402451A
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English (en)
French (fr)
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EP0712147B1 (de
Inventor
Joel Danroc
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Definitions

  • the present invention relates to a method of manufacturing a field effect electron source.
  • the present invention applies in particular to the field of flat display devices also called “flat screens”, as well as to the manufacture of pressure measurement gauges.
  • a microtip electron source comprises at least one cathode conductor on an electrically insulating substrate, an electrically insulating layer which covers this cathode conductor and at least one grid formed on this electrically insulating layer.
  • Holes are formed through the grid and the insulating layer above the cathode conductor.
  • micro-tips are formed in these holes and carried by the cathode conductor.
  • each micro-tip is located substantially in the plane of the grid, this grid being used to extract electrons from the micro-tips.
  • the holes have very small dimensions (they have a diameter of less than 2 ⁇ m).
  • These other known display devices comprise a cathodoluminescent anode placed facing an electron source comprising layers of diamond or diamond-like carbon intended to emit electrons.
  • These layers are obtained by laser ablation or by chemical vapor deposition.
  • Diamond or diamond carbon emits electrons much more easily than the materials conventionally used for the manufacture of microtips.
  • the minimum electric field from which an electron emission can be obtained can be twenty times weaker than the minimum electric field corresponding to metals such as molybdenum, for example.
  • the deposits obtained are continuous layers and not micro-tips.
  • the resulting display devices are, as seen above, of the "diode" type, which poses a problem as regards their addressing.
  • the object of the present invention is to remedy the above drawbacks.
  • the process which is the subject of the invention can be implemented with large surface substrates and thus makes it possible to obtain electron sources (and therefore display screens) of large surface area (several tens of inches diagonally).
  • the temperature at which the main deposits are formed is close to ambient temperature, of the order of 20 ° C for electrophoresis and of the order of 40 ° C to 60 ° C for electrochemical deposition.
  • the main deposits are covered with a secondary deposit of a metal, for example by electrochemical deposition, in order to consolidate these micro-clusters.
  • the diamond or diamond-like carbon particles have a size of the order of 1 ⁇ m or less than 1 ⁇ m (but of course less than the size of the microtips).
  • These particles can be obtained from natural or artificial diamond or by a method chosen from laser synthesis, deposition chemical vapor phase and physical vapor deposition.
  • the holes formed through the grid layer and the electrically insulating layer may have a circular or rectangular shape.
  • the size of these holes can be chosen in a range ranging from approximately 1 ⁇ m to several tens of micrometers.
  • the size of the holes that are formed to implement the process which is the subject of the invention can be much larger than that which is necessary for the implementation of a process for manufacturing a conventional source with microtips (not covered).
  • the source object of the present invention emits more electrons than a microtip source, due to the use, in the present invention, of deposits of diamond carbon particles or of diamond type which have a higher emissivity than conventional electron emitting materials such as molybdenum.
  • this device has a greater brightness than a conventional device with microtips (not covered), for a same control voltage.
  • this device using a source according to the invention requires a control voltage lower than that which is necessary for such a conventional device with microtips.
  • the main deposits can be made of diamond or diamond-like carbon particles or can be made of such particles dispersed in a metal.
  • each of these main deposits can be covered with a secondary deposit of a metal intended to consolidate these main deposits.
  • Holes 10 are formed through these grids 8 and the insulating layer 6 above the cathode conductors 4.
  • Micro-tips 12 are formed in the holes 10 and carried by the cathode conductors 4.
  • Each of these micro-tips 12 is covered with a deposit 13 of diamond or diamond-like carbon particles.
  • cathode conductors 4 are parallel and that the grids 8 are parallel to each other and perpendicular to the cathode conductors 4.
  • the holes 10 and therefore the microtips 12 are located in the areas where these grids cross the cathode conductors.
  • micro-tips of such an area covered with deposits 13, which emit electrons when an appropriate electrical voltage is applied, by means not shown, between the conductor cathode 4 and grid 8 which correspond to this zone.
  • a cathodoluminescence display device is schematically represented in section in FIG. 2.
  • This device comprises the electron source 14 of FIG. 1.
  • the device of FIG. 2 also comprises a cathodoluminescent anode 16 placed opposite the source 14 and separated from the latter by a space 18 in which a vacuum has been created.
  • the cathodoluminescent anode 16 comprises an electrically insulating and transparent substrate 20 which is provided with an electrically conductive and transparent layer 22 forming an anode.
  • this layer 24 emits light which a user of the display device observes through the transparent substrate 20.
  • FIG. 3 schematically illustrates this method.
  • the diameter D1 of the holes (substantially circular) formed in the grid 8 and in the electrically insulating layer 6 may advantageously be greater than the diameter of the holes that the microtip electron sources described in the documents (1 ) to (4).
  • this diameter D1 can take values of the order of 1 ⁇ m up to 50 ⁇ m.
  • FIG. 4 schematically illustrates the fact that the holes 10, instead of having a circular shape, can have a rectangular shape.
  • the width D2 of these holes 10 in FIG. 4, of rectangular shape can be taken equal to the diameter D1 mentioned above and can therefore also be significantly greater than the diameter of the holes of the microtip sources.
  • a diamond or diamond type carbon powder is used.
  • This powder can be obtained by chemical vapor deposition from a mixture of hydrogen and light hydrocarbons.
  • This chemical vapor deposition can be assisted by an electron beam or be assisted by a plasma generated by microwaves.
  • This powder can also be formed by an ultrasonic spraying process known under the name of "Pyrosol”, that is to say, more precisely by pyrolysis of an aerosol of a carbonaceous compound.
  • This powder can also be synthesized by means of a laser, that is to say, more precisely, by chemical vapor deposition as previously but assisted by laser.
  • physical vapor deposition from carbon targets (graphite for example) and a plasma gas such as argon alone or mixed with hydrogen, hydrocarbons, without dopant or with a dopant such as for example diborane.
  • This powder can also be obtained by laser ablation.
  • artificial diamonds can be prepared by compacting carbon, at high pressure and high temperature, and then making the powder from these artificial diamonds.
  • these diamond carbon powders and these diamond type carbon powders are chosen so as to have a micron or submicron or nanometric particle size but, of course, less than the size of the microtips.
  • micro-tips have a size of the order of 1 ⁇ m
  • a submicron particle size is used.
  • these diamond or diamond carbon powders can be doped or undoped.
  • Boron can for example be used as a dopant.
  • the deposition of the powder (diamond or diamond-like carbon particles) leading to the formation of the deposits 13 can be carried out by electrophoresis (cataphoresis or anaphoresis), optionally supplemented by an electrochemical metallic deposition for consolidation, or by electrochemical co-deposition metal and carbon diamond or diamond type.
  • micro-tips 12 In the case of deposition by anaphoresis, the structure provided with micro-tips 12 is placed in an appropriate solution 26 and each micro-tip 12 is brought to a positive potential during this deposition phase.
  • the cathode conductors 4 are brought to this positive potential by means of an appropriate voltage source 28, the positive terminal of which is connected to these cathode conductors 4 while the negative terminal of this source is connected to a platinum counter electrode 32 or stainless steel located in the bath at a distance from the substrate of about 1 to 5 cm.
  • the fine powder of diamond or diamond-like carbon particles is suspended in solution 26 (before placing the structure in this solution).
  • the voltage supplied by the source 28 can range up to around 200 V.
  • the negative terminal of the source 28 which is connected to the cathode conductors 4 while the positive terminal of the source 28 is connected to a counter-electrode 32 of platinum or stainless steel located in the bath at a distance from the substrate of about 1 to 5 cm.
  • a voltage of up to about 200 V is then used.
  • FIG. 5 This is schematically illustrated in FIG. 5 where we see the structure which is provided with microtips 12, covered with deposits 13, and which is immersed in a solution 30 allowing such an electrochemical deposit.
  • a suitable electrical voltage is then applied between the cathode conductors 4 and an electrode 33 placed in this solution, by means of a voltage source 34.
  • This electrode 33 is for example made of nickel and the solution 30 contains for example 300 g / l of nickel sulphate, 30 g / l of nickel chloride, 30 g / l of boric acid and 0.6 g / l of lauryl sodium sulfate.
  • an electric current of 4 A / dm is used.
  • FIG. 5 shows the metal deposit 36 which is formed on each deposit 13 after this electrochemical deposition operation.
  • the deposits 13 can also be formed by electrochemical co-deposition of metal and of diamond or diamond-like carbon.
  • An appropriate current source is used, for example of the order of 4 A / dm, and the negative terminal of this source is applied to the cathode conductors and the positive terminal of this source to a nickel electrode placed in the bath .
  • the nickel is deposited on the micro-tips 12, carrying with it the diamond particles, hence the formation of the deposits 13 of nickel and diamond on the micro-tips 12.
  • a powder of particles of silicon carbide or titanium carbide, of micron or submicron size can be used for the implementation of a process according to the invention, and use the same methods as above (electrophoresis, possibly supplemented by an electrochemical metallic deposition of consolidation, or electrochemical co-deposition of metal and such particles), to form the deposits 13.
  • the tops of the microtips 12 covered with deposits 13 are located substantially in the plane of the grids and are not in contact with these grids.
  • deposits 13 are selective: these deposits are formed only on the microtips, no deposit forming on the non-polarized parts of the structure comprising the microtips.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
EP95402451A 1994-11-08 1995-11-03 Feldeffekt-Elektronenquelle und Verfahren zur Herstellung; Anwendung in Anzeigevorrichtungen mit Kathodolumineszenz Expired - Lifetime EP0712147B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9413372A FR2726689B1 (fr) 1994-11-08 1994-11-08 Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence
FR9413372 1994-11-08

Publications (2)

Publication Number Publication Date
EP0712147A1 true EP0712147A1 (de) 1996-05-15
EP0712147B1 EP0712147B1 (de) 1999-06-30

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EP95402451A Expired - Lifetime EP0712147B1 (de) 1994-11-08 1995-11-03 Feldeffekt-Elektronenquelle und Verfahren zur Herstellung; Anwendung in Anzeigevorrichtungen mit Kathodolumineszenz

Country Status (5)

Country Link
US (1) US5836796A (de)
EP (1) EP0712147B1 (de)
JP (1) JPH08227655A (de)
DE (1) DE69510522T2 (de)
FR (1) FR2726689B1 (de)

Cited By (2)

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EP0802555A2 (de) * 1996-04-15 1997-10-22 Matsushita Electric Industrial Co., Ltd. Feldemissionselektronenquelle und seine Herstellungsverfahren
EP0957503A2 (de) * 1998-05-15 1999-11-17 Sony Corporation Verfahren zur Herstellung einer Feldemissionskathode

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US5853492A (en) * 1996-02-28 1998-12-29 Micron Display Technology, Inc. Wet chemical emitter tip treatment
US6132278A (en) * 1996-06-25 2000-10-17 Vanderbilt University Mold method for forming vacuum field emitters and method for forming diamond emitters
US5858478A (en) * 1997-12-02 1999-01-12 The Aerospace Corporation Magnetic field pulsed laser deposition of thin films
US5944573A (en) * 1997-12-10 1999-08-31 Bav Technologies, Ltd. Method for manufacture of field emission array
FR2778757B1 (fr) * 1998-05-12 2001-10-05 Commissariat Energie Atomique Systeme d'inscription d'informations sur un support sensible aux rayons x
JP2000021287A (ja) * 1998-06-30 2000-01-21 Sharp Corp 電界放出型電子源及びその製造方法
JP3595718B2 (ja) 1999-03-15 2004-12-02 株式会社東芝 表示素子およびその製造方法
US6935917B1 (en) * 1999-07-16 2005-08-30 Mitsubishi Denki Kabushiki Kaisha Discharge surface treating electrode and production method thereof
US6342755B1 (en) * 1999-08-11 2002-01-29 Sony Corporation Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles
US6462467B1 (en) * 1999-08-11 2002-10-08 Sony Corporation Method for depositing a resistive material in a field emission cathode
US6384520B1 (en) * 1999-11-24 2002-05-07 Sony Corporation Cathode structure for planar emitter field emission displays
KR100480771B1 (ko) * 2000-01-05 2005-04-06 삼성에스디아이 주식회사 전계방출소자 및 그 제조방법
KR100464314B1 (ko) * 2000-01-05 2004-12-31 삼성에스디아이 주식회사 전계방출소자 및 그 제조방법
JP3737696B2 (ja) 2000-11-17 2006-01-18 株式会社東芝 横型の電界放出型冷陰極装置の製造方法
FR2843241A1 (fr) * 2002-07-31 2004-02-06 Framatome Connectors Int Dispositif de retention de contact ameliore
US8048789B2 (en) * 2005-04-26 2011-11-01 Northwestern University Mesoscale pyramids, arrays and methods of preparation
JP2007273270A (ja) * 2006-03-31 2007-10-18 Mitsubishi Electric Corp 電界放出型表示装置およびその製造方法
ATE529881T1 (de) * 2006-08-03 2011-11-15 Creepservice S A R L Verfahren zur beschichtung von substraten mit diamantähnlichen kohlenstoffschichten
US20100261071A1 (en) * 2009-04-13 2010-10-14 Applied Materials, Inc. Metallized fibers for electrochemical energy storage
GB2482728A (en) * 2010-08-13 2012-02-15 Element Six Production Pty Ltd Polycrystalline superhard layer made by electrophoretic deposition
TWI435360B (zh) * 2011-10-17 2014-04-21 Au Optronics Corp 場發射顯示器及其顯示陣列基板的製造方法
CN107098342A (zh) * 2017-04-07 2017-08-29 河南黄河旋风股份有限公司 金刚石粉体分离装置和分离方法

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0802555A2 (de) * 1996-04-15 1997-10-22 Matsushita Electric Industrial Co., Ltd. Feldemissionselektronenquelle und seine Herstellungsverfahren
EP0802555A3 (de) * 1996-04-15 1998-05-27 Matsushita Electric Industrial Co., Ltd. Feldemissionselektronenquelle und seine Herstellungsverfahren
US5897790A (en) * 1996-04-15 1999-04-27 Matsushita Electric Industrial Co., Ltd. Field-emission electron source and method of manufacturing the same
US5925891A (en) * 1996-04-15 1999-07-20 Matsushita Electric Industrial Co., Ltd. Field-emission electron source
EP0938122A2 (de) * 1996-04-15 1999-08-25 Matsushita Electric Industrial Co., Ltd. Feldemissionselektronenquelle und seine Herstellungsverfahren
EP0938122A3 (de) * 1996-04-15 2000-12-13 Matsushita Electric Industrial Co., Ltd. Feldemissionselektronenquelle und seine Herstellungsverfahren
EP0957503A2 (de) * 1998-05-15 1999-11-17 Sony Corporation Verfahren zur Herstellung einer Feldemissionskathode
EP0957503A3 (de) * 1998-05-15 2002-10-23 Sony Corporation Verfahren zur Herstellung einer Feldemissionskathode

Also Published As

Publication number Publication date
EP0712147B1 (de) 1999-06-30
FR2726689B1 (fr) 1996-11-29
FR2726689A1 (fr) 1996-05-10
DE69510522T2 (de) 2000-03-16
JPH08227655A (ja) 1996-09-03
US5836796A (en) 1998-11-17
DE69510522D1 (de) 1999-08-05

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