EP0671755B1 - Elektronenquelle mit Mikrospitzenemissionskathoden - Google Patents

Elektronenquelle mit Mikrospitzenemissionskathoden Download PDF

Info

Publication number
EP0671755B1
EP0671755B1 EP95400494A EP95400494A EP0671755B1 EP 0671755 B1 EP0671755 B1 EP 0671755B1 EP 95400494 A EP95400494 A EP 95400494A EP 95400494 A EP95400494 A EP 95400494A EP 0671755 B1 EP0671755 B1 EP 0671755B1
Authority
EP
European Patent Office
Prior art keywords
electrodes
microtips
electrically conductive
mesh
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP95400494A
Other languages
English (en)
French (fr)
Other versions
EP0671755A1 (de
Inventor
Pierre Vaudaine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP0671755A1 publication Critical patent/EP0671755A1/de
Application granted granted Critical
Publication of EP0671755B1 publication Critical patent/EP0671755B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Definitions

  • This improvement is obtained by introducing an electrical resistance mounted in series with the microtips.
  • a resistive layer can optionally be placed above or below the electrodes 10.
  • At least one of the series of electrodes (cathode conductors or grids) is associated with a resistive layer and each electrode of this series has a lattice structure or mesh structure .
  • This further improvement aims to reduce the risk of short circuit between the rows and columns of the source.
  • FIG. 2 is a schematic and partial top view of an electron source described in this document (4) and FIG. 3 is an enlarged view in section along the axis III-III of FIG. 2.
  • This known source with a matrix structure comprises a substrate 1, for example made of glass, and possibly a thin layer 6 of silica on this substrate 1.
  • the enlarged zones 17 are located in the center of the meshes of the cathode conductor in the form of a lattice.
  • holes or more exactly micro-holes 18 are preferably formed in the thickness of the enlarged zones of the grid and in the thickness of the insulating layer 11.
  • they can be square and have a side of 25 microns.
  • the electrical resistance r1 of the microtips situated at the edge of the group of microtips corresponding to a mesh of the cathode conductor has been represented symbolically, and the electrical resistance r2 of the microtips situated in the center of this group of microtips, r2 being greater than r1 .
  • the electrodes which have the trellis structure and which are associated with the electrically conductive elements are the electrodes of the first series of electrodes.
  • each electrically conductive element is inside the mesh corresponding to this element
  • the electrodes having the lattice structure are located under the resistive layer and each electrically conductive element is also under this layer resistive and under the group of microtips corresponding to this element.
  • the electrodes which have the lattice structure and which are associated with the electrically conductive elements are the electrodes of the second series of electrodes.
  • microtip source according to the invention which is schematically and partially shown in plan view in FIG. 4 and in enlarged section in FIG. 5 (which is section III-III in FIG. 4) is identical to the source which has been described with reference to Figures 2 and 3 except that it includes in addition to the elements electrically conductive 3a respectively placed inside the meshes of the cathode conductors 3.
  • this plate 3a preferably occupies a surface slightly larger than that which is covered by this group of microtips as seen in FIGS. 4 and 5.
  • FIG. 5 shows symbolically the electrical resistances r3 connecting each plate 3a to the tracks of the corresponding lattice as well as the resistors r4 between the microtips and these plates 3a respectively.
  • This electrical resistance of access to the microtips depends, in the first order, on the distance between the conductive plate 3a and the tracks of the corresponding lattice.
  • FIGS. 4 and 5 show a grid with an openwork structure, but of course the invention also applies to a source having respectively full grids.
  • microtip electron source Another example of a microtip electron source is known from document (4) and schematically and partially represented in section in FIG. 6.
  • each cathode conductor 22 is formed on the silica layer 6 and is thus located under the resistive layer 9 and has, in top view, the same forms that the electrode 13 of FIGS. 4 and 5, except that this cathode conductor has no hole at the level of the microtips which are carried by the resistive layer 9.
  • the present invention also applies to the case of FIG. 6 (with perforated or solid cathode conductors) with a view in particular to standardizing the access resistance to each microtip in each mesh of the grids.
  • This variant also has the advantage of standardizing the time of application of the grid-cathode conductor voltage around each microtip.
  • Figure 7 illustrates schematically and partially, in section, a source according to the invention which is identical to the source described with reference to Figure 6 except that it further comprises an electrically conductive element 30 to l inside each mesh of the grids 28, opposite the group of microtips corresponding to this mesh.
  • Each plate 30 comprises holes 32, aligned with the holes 26 and placed respectively opposite the microtips of this group.
  • Each plate 30 is advantageously produced during the same step as that leading to the formation of the grids, from the same conductive layer, the plates 30 thus having the same thickness as the grids 28.
  • the cathode conductors with lattice structures of FIG. 5 could be not under the resistive layer 9 but on the latter (all other things being equal).
  • the grids 28 with a lattice structure of FIG. 7 could not be on the resistive layer 24 but under the latter and in contact with the insulating layer 11.
  • the conductive plates 30 can be either on the resistive layer 24 as seen in FIG. 7, or under this resistive layer 24 and in contact with the insulating layer 11 (these plates 30 then being at the same level as the grids 28, inside the meshes of the latter.

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Claims (7)

  1. Elektronenquelle, umfassend:
    - eine erste Serie paralleler Elektroden (3, 22), angeordnet auf einem elektrisch isolierenden Träger (1), die die Rolle der Kathodenleiter spielen und eine Vielzahl elektronenemittierender Mikrospitzen (19) tragen,
    - eine zweite Serie paralleler Elektroden (13, 28), die die Rolle von Gittern spielen, durch eine Isolierschicht (11) elektrisch isoliert von den Kathodenleitern und mit diesen einen Winkel bildend, was überkreuzungszonen der Kathodenleiter und der Gitter definiert,
    wobei jede der Elektroden von wenigstens einer der Serien in Kontakt ist mit einer resistiven Schicht (9, 24) und eine gitterförmige Struktur besitzt, die Leiterbahnen umfaßt, die sich kreuzen und Maschen genannte Öffnungen begrenzen, und eine Gruppe von Mikrospitzen jeder Masche gegenübersteht,
    dabei ist diese Quelle dadurch gekennzeichnet, daß sie außerdem ein elektrisch leitendes Element (3a, 30) umfaßt, der Innenseite jeder Masche gegenüberstehend, elektrisch isoliert von den sich kreuzenden Leiterbahnen, der dieser Masche entsprechenden Mikrospitzengruppe gegenüberstehend und in Kontakt mit der resistiven Schicht (9,24), um den Zugriffs- bzw. Zugangswiderstand der Mikrospitzen innerhalb jeder Masche zu vereinheitlichen.
  2. Quelle nach Anspruch 1, dadurch gekennzeichnet, daß jedes elektrisch leitende Element (3a, 30) sich im Innern der diesem Element entsprechenden Masche befindet.
  3. Quelle nach Anspruch 2, dadurch gekennzeichnet, daß die Dicke jedes elektrisch leitenden Elements gleich der Dicke der Elektroden mit der gitterförmigen Struktur ist, mit denen dieses Element verbunden ist.
  4. Quelle nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die Elektroden, die die gitterförmige Struktur besitzen und die verbunden sind mit den elektrisch leitenden Elementen, Elektroden (3) der ersten Elektrodenserie sind.
  5. Quelle nach einem der Ansprüche 2 und 4, dadurch gekennzeichnet, daß die Elektroden, die die gitterförmige Struktur besitzen, sich unter der resistiven Schicht (9) befinden, und dadurch, daß jedes elektrisch leitende Element (3a) sich auch unter dieser resistiven Schicht befindet und unter der diesem Element entsprechenden Gruppe von Mikrospitzen (19).
  6. Quelle nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die Elektroden, die die gitterförmige Struktur besitzen und die verbunden sind mit den elektrisch leitenden Elementen, Elektroden (28) der zweiten Elektrodenserie sind.
  7. Quelle nach den Ansprüchen 2 und 6, dadurch gekennzeichnet, daß die Elektroden, die die gitterförmige Struktur besitzen, sich auf der resistiven Schicht (24) befinden, und dadurch, daß jedes elektrisch leitende Element (30) sich auch auf dieser resistiven Schicht über der diesem Element entsprechenden Gruppe von Mikrospitzen (19) befindet und gegenüber jeder Mikrospitze dieser Gruppe ein Loch (32) aufweist.
EP95400494A 1994-03-09 1995-03-07 Elektronenquelle mit Mikrospitzenemissionskathoden Expired - Lifetime EP0671755B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9402709 1994-03-09
FR9402709A FR2717304B1 (fr) 1994-03-09 1994-03-09 Source d'électrons à cathodes émissives à micropointes.

Publications (2)

Publication Number Publication Date
EP0671755A1 EP0671755A1 (de) 1995-09-13
EP0671755B1 true EP0671755B1 (de) 1997-07-09

Family

ID=9460837

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95400494A Expired - Lifetime EP0671755B1 (de) 1994-03-09 1995-03-07 Elektronenquelle mit Mikrospitzenemissionskathoden

Country Status (5)

Country Link
US (1) US6043592A (de)
EP (1) EP0671755B1 (de)
JP (1) JPH0831347A (de)
DE (1) DE69500403T2 (de)
FR (1) FR2717304B1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0713236A1 (de) * 1994-11-18 1996-05-22 Texas Instruments Incorporated Elektron-emittierenden Vorrichtung
JP2907080B2 (ja) * 1995-09-26 1999-06-21 双葉電子工業株式会社 電界放出型表示装置
JPH10308162A (ja) * 1997-05-07 1998-11-17 Futaba Corp 電界放出素子
JPH10340666A (ja) * 1997-06-09 1998-12-22 Futaba Corp 電界電子放出素子
JP2000215787A (ja) * 1999-01-21 2000-08-04 Nec Corp 電界放出型冷陰極素子、その製造方法及び画像表示装置
US6611093B1 (en) * 2000-09-19 2003-08-26 Display Research Laboratories, Inc. Field emission display with transparent cathode
FR2828956A1 (fr) * 2001-06-11 2003-02-28 Pixtech Sa Protection locale d'une grille d'ecran plat a micropointes
WO2004090786A2 (en) * 2003-04-04 2004-10-21 Lumidigm, Inc. Multispectral biometric sensor
KR100814856B1 (ko) * 2006-10-20 2008-03-20 삼성에스디아이 주식회사 발광 장치 및 표시 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2593953B1 (fr) * 1986-01-24 1988-04-29 Commissariat Energie Atomique Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US4990766A (en) * 1989-05-22 1991-02-05 Murasa International Solid state electron amplifier
FR2650119A1 (fr) * 1989-07-21 1991-01-25 Thomson Tubes Electroniques Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation
US5142184B1 (en) * 1990-02-09 1995-11-21 Motorola Inc Cold cathode field emission device with integral emitter ballasting
FR2663462B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
FR2687839B1 (fr) * 1992-02-26 1994-04-08 Commissariat A Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source.
US5329207A (en) * 1992-05-13 1994-07-12 Micron Technology, Inc. Field emission structures produced on macro-grain polysilicon substrates
US5283500A (en) * 1992-05-28 1994-02-01 At&T Bell Laboratories Flat panel field emission display apparatus
US5536993A (en) * 1994-11-18 1996-07-16 Texas Instruments Incorporated Clustered field emission microtips adjacent stripe conductors
US5541466A (en) * 1994-11-18 1996-07-30 Texas Instruments Incorporated Cluster arrangement of field emission microtips on ballast layer

Also Published As

Publication number Publication date
JPH0831347A (ja) 1996-02-02
EP0671755A1 (de) 1995-09-13
FR2717304B1 (fr) 1996-04-05
DE69500403D1 (de) 1997-08-14
DE69500403T2 (de) 1998-01-22
FR2717304A1 (fr) 1995-09-15
US6043592A (en) 2000-03-28

Similar Documents

Publication Publication Date Title
EP0558393B1 (de) Elektronenquelle mit Mikropunktkathoden und Anzeigevorrichtung mit Kathodolumineszenz erregt durch Feldemission unter Anwendung dieser Quelle
EP0461990B1 (de) Elektronenquelle mit Mikropunktkathoden
EP0172089B1 (de) Bildanzeigevorrichtung mittels feldemissions angeregter Kathodolumineszenz
EP0704877B1 (de) Elektrischer Schutz von einer Anode eines flachen Bildschirms
FR2796489A1 (fr) Dispositif d'affichage a emission de champ comportant un film de nanotube en carbone en tant qu'emetteurs
EP0671755B1 (de) Elektronenquelle mit Mikrospitzenemissionskathoden
EP0634769B1 (de) Herstellungsverfahren für Mikrospitzenkaltkathoden
EP1826797B1 (de) Kathodenstruktur mit Nanoröhren für Bildschirm
EP0867912A1 (de) Montieren von Abstandshältern in einer flachen Anzeigetafel
FR2497984A1 (fr) Dispositif d'affichage a decharge
EP1476888B1 (de) Kathodenstruktur für einen bildschirm
EP0697710B1 (de) Herstellungsverfahren einer Mikrospitzen-Elektronenquelle
WO1998025291A1 (fr) Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source
EP1210721B1 (de) Flache feldemissionsanzeigevorrichtung mit modulationselektrode
EP0456550B1 (de) Elektronenröhre mit zylinderförmigem Gitter
FR2702869A1 (fr) Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif.
WO1994014153A1 (fr) Ecran plat a micropointes protegees individuellement par dipole
EP1073088A1 (de) Herstellung einer Anode eines flachen Bildschirms, nach diesem Verfahren hergestellte Anode und Verwendung dieser Anode für einen flachen Schirm
WO2008074825A1 (fr) Structure de cathode pour ecran plat avec grille de refocalisation
FR2779570A1 (fr) Cathode a emission de champ et procede de fabrication associe
FR2545977A1 (fr) Dispositif de communication
EP0867908A1 (de) Vergleichmässigung der potentiellen Elektronenemission einer Kathode eines flachen Mikrospitzen-Bildschirms
FR2828956A1 (fr) Protection locale d'une grille d'ecran plat a micropointes
FR2798507A1 (fr) Dispositif permettant de produire un champ electrique module au niveau d'une electrode et son application aux ecrans plats a emission de champ
EP1956625A1 (de) Struktur zum Aussenden von Elektronen durch Feldeffekt mit Fokussierung der Aussendung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE GB IT

17P Request for examination filed

Effective date: 19960214

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

17Q First examination report despatched

Effective date: 19960805

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE GB IT

REF Corresponds to:

Ref document number: 69500403

Country of ref document: DE

Date of ref document: 19970814

ITF It: translation for a ep patent filed

Owner name: JACOBACCI & PERANI S.P.A.

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)

Effective date: 19970911

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20040303

Year of fee payment: 10

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20040402

Year of fee payment: 10

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20050307

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050307

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20051001

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20050307