EP0671755B1 - Elektronenquelle mit Mikrospitzenemissionskathoden - Google Patents
Elektronenquelle mit Mikrospitzenemissionskathoden Download PDFInfo
- Publication number
- EP0671755B1 EP0671755B1 EP95400494A EP95400494A EP0671755B1 EP 0671755 B1 EP0671755 B1 EP 0671755B1 EP 95400494 A EP95400494 A EP 95400494A EP 95400494 A EP95400494 A EP 95400494A EP 0671755 B1 EP0671755 B1 EP 0671755B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrodes
- microtips
- electrically conductive
- mesh
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005136 cathodoluminescence Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Definitions
- This improvement is obtained by introducing an electrical resistance mounted in series with the microtips.
- a resistive layer can optionally be placed above or below the electrodes 10.
- At least one of the series of electrodes (cathode conductors or grids) is associated with a resistive layer and each electrode of this series has a lattice structure or mesh structure .
- This further improvement aims to reduce the risk of short circuit between the rows and columns of the source.
- FIG. 2 is a schematic and partial top view of an electron source described in this document (4) and FIG. 3 is an enlarged view in section along the axis III-III of FIG. 2.
- This known source with a matrix structure comprises a substrate 1, for example made of glass, and possibly a thin layer 6 of silica on this substrate 1.
- the enlarged zones 17 are located in the center of the meshes of the cathode conductor in the form of a lattice.
- holes or more exactly micro-holes 18 are preferably formed in the thickness of the enlarged zones of the grid and in the thickness of the insulating layer 11.
- they can be square and have a side of 25 microns.
- the electrical resistance r1 of the microtips situated at the edge of the group of microtips corresponding to a mesh of the cathode conductor has been represented symbolically, and the electrical resistance r2 of the microtips situated in the center of this group of microtips, r2 being greater than r1 .
- the electrodes which have the trellis structure and which are associated with the electrically conductive elements are the electrodes of the first series of electrodes.
- each electrically conductive element is inside the mesh corresponding to this element
- the electrodes having the lattice structure are located under the resistive layer and each electrically conductive element is also under this layer resistive and under the group of microtips corresponding to this element.
- the electrodes which have the lattice structure and which are associated with the electrically conductive elements are the electrodes of the second series of electrodes.
- microtip source according to the invention which is schematically and partially shown in plan view in FIG. 4 and in enlarged section in FIG. 5 (which is section III-III in FIG. 4) is identical to the source which has been described with reference to Figures 2 and 3 except that it includes in addition to the elements electrically conductive 3a respectively placed inside the meshes of the cathode conductors 3.
- this plate 3a preferably occupies a surface slightly larger than that which is covered by this group of microtips as seen in FIGS. 4 and 5.
- FIG. 5 shows symbolically the electrical resistances r3 connecting each plate 3a to the tracks of the corresponding lattice as well as the resistors r4 between the microtips and these plates 3a respectively.
- This electrical resistance of access to the microtips depends, in the first order, on the distance between the conductive plate 3a and the tracks of the corresponding lattice.
- FIGS. 4 and 5 show a grid with an openwork structure, but of course the invention also applies to a source having respectively full grids.
- microtip electron source Another example of a microtip electron source is known from document (4) and schematically and partially represented in section in FIG. 6.
- each cathode conductor 22 is formed on the silica layer 6 and is thus located under the resistive layer 9 and has, in top view, the same forms that the electrode 13 of FIGS. 4 and 5, except that this cathode conductor has no hole at the level of the microtips which are carried by the resistive layer 9.
- the present invention also applies to the case of FIG. 6 (with perforated or solid cathode conductors) with a view in particular to standardizing the access resistance to each microtip in each mesh of the grids.
- This variant also has the advantage of standardizing the time of application of the grid-cathode conductor voltage around each microtip.
- Figure 7 illustrates schematically and partially, in section, a source according to the invention which is identical to the source described with reference to Figure 6 except that it further comprises an electrically conductive element 30 to l inside each mesh of the grids 28, opposite the group of microtips corresponding to this mesh.
- Each plate 30 comprises holes 32, aligned with the holes 26 and placed respectively opposite the microtips of this group.
- Each plate 30 is advantageously produced during the same step as that leading to the formation of the grids, from the same conductive layer, the plates 30 thus having the same thickness as the grids 28.
- the cathode conductors with lattice structures of FIG. 5 could be not under the resistive layer 9 but on the latter (all other things being equal).
- the grids 28 with a lattice structure of FIG. 7 could not be on the resistive layer 24 but under the latter and in contact with the insulating layer 11.
- the conductive plates 30 can be either on the resistive layer 24 as seen in FIG. 7, or under this resistive layer 24 and in contact with the insulating layer 11 (these plates 30 then being at the same level as the grids 28, inside the meshes of the latter.
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Claims (7)
- Elektronenquelle, umfassend:- eine erste Serie paralleler Elektroden (3, 22), angeordnet auf einem elektrisch isolierenden Träger (1), die die Rolle der Kathodenleiter spielen und eine Vielzahl elektronenemittierender Mikrospitzen (19) tragen,- eine zweite Serie paralleler Elektroden (13, 28), die die Rolle von Gittern spielen, durch eine Isolierschicht (11) elektrisch isoliert von den Kathodenleitern und mit diesen einen Winkel bildend, was überkreuzungszonen der Kathodenleiter und der Gitter definiert,wobei jede der Elektroden von wenigstens einer der Serien in Kontakt ist mit einer resistiven Schicht (9, 24) und eine gitterförmige Struktur besitzt, die Leiterbahnen umfaßt, die sich kreuzen und Maschen genannte Öffnungen begrenzen, und eine Gruppe von Mikrospitzen jeder Masche gegenübersteht,
dabei ist diese Quelle dadurch gekennzeichnet, daß sie außerdem ein elektrisch leitendes Element (3a, 30) umfaßt, der Innenseite jeder Masche gegenüberstehend, elektrisch isoliert von den sich kreuzenden Leiterbahnen, der dieser Masche entsprechenden Mikrospitzengruppe gegenüberstehend und in Kontakt mit der resistiven Schicht (9,24), um den Zugriffs- bzw. Zugangswiderstand der Mikrospitzen innerhalb jeder Masche zu vereinheitlichen. - Quelle nach Anspruch 1, dadurch gekennzeichnet, daß jedes elektrisch leitende Element (3a, 30) sich im Innern der diesem Element entsprechenden Masche befindet.
- Quelle nach Anspruch 2, dadurch gekennzeichnet, daß die Dicke jedes elektrisch leitenden Elements gleich der Dicke der Elektroden mit der gitterförmigen Struktur ist, mit denen dieses Element verbunden ist.
- Quelle nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die Elektroden, die die gitterförmige Struktur besitzen und die verbunden sind mit den elektrisch leitenden Elementen, Elektroden (3) der ersten Elektrodenserie sind.
- Quelle nach einem der Ansprüche 2 und 4, dadurch gekennzeichnet, daß die Elektroden, die die gitterförmige Struktur besitzen, sich unter der resistiven Schicht (9) befinden, und dadurch, daß jedes elektrisch leitende Element (3a) sich auch unter dieser resistiven Schicht befindet und unter der diesem Element entsprechenden Gruppe von Mikrospitzen (19).
- Quelle nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die Elektroden, die die gitterförmige Struktur besitzen und die verbunden sind mit den elektrisch leitenden Elementen, Elektroden (28) der zweiten Elektrodenserie sind.
- Quelle nach den Ansprüchen 2 und 6, dadurch gekennzeichnet, daß die Elektroden, die die gitterförmige Struktur besitzen, sich auf der resistiven Schicht (24) befinden, und dadurch, daß jedes elektrisch leitende Element (30) sich auch auf dieser resistiven Schicht über der diesem Element entsprechenden Gruppe von Mikrospitzen (19) befindet und gegenüber jeder Mikrospitze dieser Gruppe ein Loch (32) aufweist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9402709 | 1994-03-09 | ||
FR9402709A FR2717304B1 (fr) | 1994-03-09 | 1994-03-09 | Source d'électrons à cathodes émissives à micropointes. |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0671755A1 EP0671755A1 (de) | 1995-09-13 |
EP0671755B1 true EP0671755B1 (de) | 1997-07-09 |
Family
ID=9460837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95400494A Expired - Lifetime EP0671755B1 (de) | 1994-03-09 | 1995-03-07 | Elektronenquelle mit Mikrospitzenemissionskathoden |
Country Status (5)
Country | Link |
---|---|
US (1) | US6043592A (de) |
EP (1) | EP0671755B1 (de) |
JP (1) | JPH0831347A (de) |
DE (1) | DE69500403T2 (de) |
FR (1) | FR2717304B1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0713236A1 (de) * | 1994-11-18 | 1996-05-22 | Texas Instruments Incorporated | Elektron-emittierenden Vorrichtung |
JP2907080B2 (ja) * | 1995-09-26 | 1999-06-21 | 双葉電子工業株式会社 | 電界放出型表示装置 |
JPH10308162A (ja) * | 1997-05-07 | 1998-11-17 | Futaba Corp | 電界放出素子 |
JPH10340666A (ja) * | 1997-06-09 | 1998-12-22 | Futaba Corp | 電界電子放出素子 |
JP2000215787A (ja) * | 1999-01-21 | 2000-08-04 | Nec Corp | 電界放出型冷陰極素子、その製造方法及び画像表示装置 |
US6611093B1 (en) * | 2000-09-19 | 2003-08-26 | Display Research Laboratories, Inc. | Field emission display with transparent cathode |
FR2828956A1 (fr) * | 2001-06-11 | 2003-02-28 | Pixtech Sa | Protection locale d'une grille d'ecran plat a micropointes |
WO2004090786A2 (en) * | 2003-04-04 | 2004-10-21 | Lumidigm, Inc. | Multispectral biometric sensor |
KR100814856B1 (ko) * | 2006-10-20 | 2008-03-20 | 삼성에스디아이 주식회사 | 발광 장치 및 표시 장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2593953B1 (fr) * | 1986-01-24 | 1988-04-29 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ |
FR2623013A1 (fr) * | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
US4990766A (en) * | 1989-05-22 | 1991-02-05 | Murasa International | Solid state electron amplifier |
FR2650119A1 (fr) * | 1989-07-21 | 1991-01-25 | Thomson Tubes Electroniques | Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation |
US5142184B1 (en) * | 1990-02-09 | 1995-11-21 | Motorola Inc | Cold cathode field emission device with integral emitter ballasting |
FR2663462B1 (fr) * | 1990-06-13 | 1992-09-11 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes. |
FR2687839B1 (fr) * | 1992-02-26 | 1994-04-08 | Commissariat A Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source. |
US5329207A (en) * | 1992-05-13 | 1994-07-12 | Micron Technology, Inc. | Field emission structures produced on macro-grain polysilicon substrates |
US5283500A (en) * | 1992-05-28 | 1994-02-01 | At&T Bell Laboratories | Flat panel field emission display apparatus |
US5541466A (en) * | 1994-11-18 | 1996-07-30 | Texas Instruments Incorporated | Cluster arrangement of field emission microtips on ballast layer |
US5536993A (en) * | 1994-11-18 | 1996-07-16 | Texas Instruments Incorporated | Clustered field emission microtips adjacent stripe conductors |
-
1994
- 1994-03-09 FR FR9402709A patent/FR2717304B1/fr not_active Expired - Fee Related
-
1995
- 1995-03-07 EP EP95400494A patent/EP0671755B1/de not_active Expired - Lifetime
- 1995-03-07 DE DE69500403T patent/DE69500403T2/de not_active Expired - Fee Related
- 1995-03-08 US US08/401,134 patent/US6043592A/en not_active Expired - Fee Related
- 1995-03-09 JP JP5000795A patent/JPH0831347A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0671755A1 (de) | 1995-09-13 |
FR2717304B1 (fr) | 1996-04-05 |
JPH0831347A (ja) | 1996-02-02 |
US6043592A (en) | 2000-03-28 |
DE69500403D1 (de) | 1997-08-14 |
FR2717304A1 (fr) | 1995-09-15 |
DE69500403T2 (de) | 1998-01-22 |
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