EP0708473A1 - Verfahren zur Herstellung einer Mikrospitzen-Elektronenquelle - Google Patents
Verfahren zur Herstellung einer Mikrospitzen-Elektronenquelle Download PDFInfo
- Publication number
- EP0708473A1 EP0708473A1 EP95402312A EP95402312A EP0708473A1 EP 0708473 A1 EP0708473 A1 EP 0708473A1 EP 95402312 A EP95402312 A EP 95402312A EP 95402312 A EP95402312 A EP 95402312A EP 0708473 A1 EP0708473 A1 EP 0708473A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- sacrificial layer
- grid
- deposition
- sacrificial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Definitions
- the present invention relates to a method for manufacturing a microtip electron source ("microtips").
- the invention applies to any field where it is likely to use such a source of microtip electrons, in particular the field of flat display devices also called "flat screens".
- the invention makes it possible, for example, to manufacture large micropoint flat screens, the surface area of which can be of the order of 1000 cm and can even go up to around 1 m.
- document (1) describes a source of microtip electrons with a matrix structure and a method of manufacturing this source.
- Documents (2) to (4) relate to improvements to the source described in document (1).
- the microtips are produced by a vacuum evaporation method.
- This method involves two steps.
- a first step is to evaporate, under grazing incidence, a sacrificial layer ("lift off layer” in articles in English), for example nickel.
- holes 10 are formed through the grid layer 8 and the electrically insulating layer 6, at the level of each cathode conductor 4.
- FIG. 1 shows the sacrificial layer which bears the reference 12 and which is formed on the grid layer 8.
- this layer 12 under grazing incidence makes it possible to selectively deposit the nickel on the grid layer 8 without putting holes at the bottom.
- a second step consists in depositing on the entire structure thus obtained a layer 14 of an electron-emitting material such as, for example, molybdenum.
- This deposit is made by evaporation of the molybdenum under an almost normal incidence.
- microtip 16 made of molybdenum which rests on the cathode conductor corresponding to this hole.
- the grazing incidence makes it necessary to place on a crown, in the evaporation device, the structures on which it is desired to form the nickel layer.
- the treatment time is long, in particular because of the evaporation of the nickel which must be done at low speed to avoid splashes.
- the material leading to the microtips is evaporated at an angle of incidence of less than 10 ° (almost normal incidence).
- the present invention aims to remedy the above drawbacks, by replacing evaporation under grazing incidence by a wet chemical deposit.
- the invention makes it possible in particular to simplify the evaporation device mentioned above and to increase its production capacity, as will be seen more clearly below.
- the present invention makes it possible to deposit microtips on large surfaces.
- the following methods can be used as wet chemical deposition methods: electrolytic deposition or chemical deposition in solution.
- the wet chemical deposition is an electrolytic deposition.
- the grid layer is used as a cathode for this electrolytic deposition.
- the sacrificial layer is removed by electrolysis.
- This sacrificial layer can be made of a material chosen from the group comprising the metals Cr, Fe, Ni, Co, Cd, Cu, Au, Ag and the alloys of these metals.
- this sacrificial layer is made of an alloy of iron and nickel.
- FIG. 2 schematically illustrates a structure which has been discussed in the description of FIG. 1 and which comprises, on the surface, the grid layer 8, this structure not including the layers 12 and 14.
- FIG. 2 has been coated with a sacrificial layer 18 in accordance with the invention, by electrolytic deposition.
- the technique used in the present invention leads to a selective deposition on the grid layer 8, as allowed by evaporation under grazing incidence.
- This electrolysis deposition technique which can be used in the present invention, has the advantage of being rapid and inexpensive since it requires only electrolysis equipment.
- FIG. 3 shows a vacuum evaporation device allowing, in accordance with the prior art, the deposition of a sacrificial layer under grazing incidence and the deposition of a layer of electron-emitting material under almost normal incidence.
- FIG. 3 There is shown very diagrammatically in FIG. 3 a vacuum enclosure 20 and, in this, substrates 22 on which it is wished to first evaporate the sacrificial layer under grazing incidence and then deposit the layer of material electron emitter under almost normal incidence.
- a dotted ring 24 is also seen on which the substrates 22 are positioned for deposition under grazing incidence.
- Tipping means 26 which are shown diagrammatically by arrows in FIG. 3, are provided for passing from deposition under grazing incidence to almost normal incidence deposition from a source 28 of electron-emitting material.
- Figure 4 shows an evaporation device usable in the present invention.
- This device is much simpler than that of FIG. 3 since, in a process according to the invention, only the evaporation of an electron emitting material remains, under an almost normal incidence, to form the microtips.
- FIG. 4 also shows the enclosure 20 in which the substrates 22 and the source of electron-emitting material 28 are located.
- the production capacity of this device is improved, compared to that of the device of FIG. 3, thanks to a shorter processing time and the possibility of putting more substrates in the enclosure 20 than in the case of the FIG. 3.
- the deposition of the sacrificial layer can be easily carried out over large areas.
- FIG. 5 shows a structure 29 comprising a glass substrate 30 on which a layer of silica 32 is formed.
- Cathodic conductors made of niobium 34 are formed on the silica layer 32.
- cathode conductors 34 have a thickness of 0.2 ⁇ m and have a lattice structure with for example square meshes whose pitch is 25 ⁇ m.
- niobium cathode conductors 34 constitute the columns of the source of electrons to be formed.
- a resistive layer 36 of amorphous silicon doped with phosphorus is deposited on the cathode conductors.
- This layer 36 is of the order of 1 ⁇ m.
- An insulating layer 38 of silica is deposited on this resistive layer 36.
- the thickness of the silica layer 38 is also of the order of 1 ⁇ m.
- a metallic layer 40 made of niobium is deposited on the silica layer 38.
- This layer 40 constitutes a grid layer.
- This grid layer 40 is of the order of 0.4 ⁇ m.
- Holes 42 of 1.4 ⁇ m in diameter are etched in the grid layer 40 and in the insulating layer 38.
- These holes 42 are placed in the central area of the mesh of the mesh and open onto the resistive layer 36.
- a sacrificial layer 44 made of an alloy of iron and nickel is deposited on the grid layer 40 by electrolysis.
- the structure 29 is placed in an appropriate electrolytic bath 46 and also placed in this electrolytic bath an electrode 48 constituting the anode during the electrolysis.
- the gate layer 40 serves as a cathode.
- An appropriate electrical voltage is applied, thanks to a voltage source 50, between the grid layer 40 and the electrode 48.
- This deposition is carried out by evaporation under almost normal incidence.
- Microtips 54 are thus formed in the holes 42.
- microtips 42 rest on the resistive layer 36.
- the sacrificial layer 44 is dissolved by electrolysis.
- the structure 53 obtained after the deposition of the molybdenum layer 54, is placed in an appropriate electrolytic bath 56.
- an appropriate electrical voltage source 58 By means of an appropriate electrical voltage source 58, an electrical voltage is established between the sacrificial layer 44 and an appropriate electrode 60 placed in the electrolytic bath 52.
- the sacrificial layer 44 serves as an anode and the electrode 60 serves as a cathode during the electrolysis.
- the voltage applied by the source 58 between the layer 44 and the electrode 60 is approximately 2V.
- the time necessary for the dissolution of the sacrificial layer 44 generally varies between 30 min and 60 min.
- the grids are then formed, perpendicular to the cathode conductors, by etching of the grid layer.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9412467A FR2726122B1 (fr) | 1994-10-19 | 1994-10-19 | Procede de fabrication d'une source d'electrons a micropointes |
FR9412467 | 1994-10-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0708473A1 true EP0708473A1 (de) | 1996-04-24 |
EP0708473B1 EP0708473B1 (de) | 1999-01-20 |
Family
ID=9467993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95402312A Expired - Lifetime EP0708473B1 (de) | 1994-10-19 | 1995-10-17 | Verfahren zur Herstellung einer Mikrospitzen-Elektronenquelle |
Country Status (5)
Country | Link |
---|---|
US (1) | US5679044A (de) |
EP (1) | EP0708473B1 (de) |
JP (1) | JPH08227653A (de) |
DE (1) | DE69507418T2 (de) |
FR (1) | FR2726122B1 (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997033297A1 (en) * | 1996-03-05 | 1997-09-12 | Candescent Technologies Corporation | Electrochemical removal of material, particularly excess emitter material in electron-emitting device |
US5893967A (en) * | 1996-03-05 | 1999-04-13 | Candescent Technologies Corporation | Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device |
US6007695A (en) * | 1997-09-30 | 1999-12-28 | Candescent Technologies Corporation | Selective removal of material using self-initiated galvanic activity in electrolytic bath |
US6027632A (en) * | 1996-03-05 | 2000-02-22 | Candescent Technologies Corporation | Multi-step removal of excess emitter material in fabricating electron-emitting device |
US6120674A (en) * | 1997-06-30 | 2000-09-19 | Candescent Technologies Corporation | Electrochemical removal of material in electron-emitting device |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5944975A (en) * | 1996-03-26 | 1999-08-31 | Texas Instruments Incorporated | Method of forming a lift-off layer having controlled adhesion strength |
US6062931A (en) * | 1999-09-01 | 2000-05-16 | Industrial Technology Research Institute | Carbon nanotube emitter with triode structure |
JP4803998B2 (ja) * | 2004-12-08 | 2011-10-26 | ソニー株式会社 | 電界放出型電子放出素子の製造方法 |
TWI437615B (zh) * | 2011-06-07 | 2014-05-11 | Au Optronics Corp | 場發射顯示元件之製作方法及應用於製作場發射顯示元件之電化學系統 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3340777A1 (de) * | 1983-11-11 | 1985-05-23 | M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München | Verfahren zur herstellung von duennfilm-feldeffekt-kathoden |
FR2593953A1 (fr) | 1986-01-24 | 1987-08-07 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ |
FR2623013A1 (fr) | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
EP0364964A2 (de) * | 1988-10-17 | 1990-04-25 | Matsushita Electric Industrial Co., Ltd. | Feldemissions-Kathoden |
US4964946A (en) * | 1990-02-02 | 1990-10-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for fabricating self-aligned field emitter arrays |
FR2663462A1 (fr) | 1990-06-13 | 1991-12-20 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes. |
FR2687839A1 (fr) | 1992-02-26 | 1993-08-27 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source. |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5458520A (en) * | 1994-12-13 | 1995-10-17 | International Business Machines Corporation | Method for producing planar field emission structure |
-
1994
- 1994-10-19 FR FR9412467A patent/FR2726122B1/fr not_active Expired - Fee Related
-
1995
- 1995-09-28 US US08/535,465 patent/US5679044A/en not_active Expired - Fee Related
- 1995-10-17 DE DE69507418T patent/DE69507418T2/de not_active Expired - Fee Related
- 1995-10-17 EP EP95402312A patent/EP0708473B1/de not_active Expired - Lifetime
- 1995-10-18 JP JP29377495A patent/JPH08227653A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3340777A1 (de) * | 1983-11-11 | 1985-05-23 | M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München | Verfahren zur herstellung von duennfilm-feldeffekt-kathoden |
FR2593953A1 (fr) | 1986-01-24 | 1987-08-07 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ |
EP0234989A1 (de) * | 1986-01-24 | 1987-09-02 | Commissariat A L'energie Atomique | Herstellungsverfahren einer feldeffektangeregten Kathodenlumineszenz-Wiedergabevorrichtung |
FR2623013A1 (fr) | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
EP0364964A2 (de) * | 1988-10-17 | 1990-04-25 | Matsushita Electric Industrial Co., Ltd. | Feldemissions-Kathoden |
US4964946A (en) * | 1990-02-02 | 1990-10-23 | The United States Of America As Represented By The Secretary Of The Navy | Process for fabricating self-aligned field emitter arrays |
FR2663462A1 (fr) | 1990-06-13 | 1991-12-20 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes. |
FR2687839A1 (fr) | 1992-02-26 | 1993-08-27 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source. |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997033297A1 (en) * | 1996-03-05 | 1997-09-12 | Candescent Technologies Corporation | Electrochemical removal of material, particularly excess emitter material in electron-emitting device |
US5766446A (en) * | 1996-03-05 | 1998-06-16 | Candescent Technologies Corporation | Electrochemical removal of material, particularly excess emitter material in electron-emitting device |
US5893967A (en) * | 1996-03-05 | 1999-04-13 | Candescent Technologies Corporation | Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device |
US6027632A (en) * | 1996-03-05 | 2000-02-22 | Candescent Technologies Corporation | Multi-step removal of excess emitter material in fabricating electron-emitting device |
US6120674A (en) * | 1997-06-30 | 2000-09-19 | Candescent Technologies Corporation | Electrochemical removal of material in electron-emitting device |
US6007695A (en) * | 1997-09-30 | 1999-12-28 | Candescent Technologies Corporation | Selective removal of material using self-initiated galvanic activity in electrolytic bath |
Also Published As
Publication number | Publication date |
---|---|
JPH08227653A (ja) | 1996-09-03 |
FR2726122A1 (fr) | 1996-04-26 |
DE69507418T2 (de) | 1999-07-15 |
DE69507418D1 (de) | 1999-03-04 |
US5679044A (en) | 1997-10-21 |
FR2726122B1 (fr) | 1996-11-22 |
EP0708473B1 (de) | 1999-01-20 |
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