KR890008886A - 마이크로포인트 방출 음극을 가진 전자원과 상기 전자원을 이용한 필드 방출로 여기되는 음극루미네센스에 의한 디스플레이 수단 - Google Patents

마이크로포인트 방출 음극을 가진 전자원과 상기 전자원을 이용한 필드 방출로 여기되는 음극루미네센스에 의한 디스플레이 수단 Download PDF

Info

Publication number
KR890008886A
KR890008886A KR1019880014500A KR880014500A KR890008886A KR 890008886 A KR890008886 A KR 890008886A KR 1019880014500 A KR1019880014500 A KR 1019880014500A KR 880014500 A KR880014500 A KR 880014500A KR 890008886 A KR890008886 A KR 890008886A
Authority
KR
South Korea
Prior art keywords
electron source
cathode
micropoint
conductor
layers
Prior art date
Application number
KR1019880014500A
Other languages
English (en)
Other versions
KR970005760B1 (ko
Inventor
보렐 미쉘
보로나 쟝-프랑스와
메이에르 로베르
랑보 삘리쁘
Original Assignee
삐에르 쇼뮈조
꼬미사리아 아 레네르기 아또미끄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삐에르 쇼뮈조, 꼬미사리아 아 레네르기 아또미끄 filed Critical 삐에르 쇼뮈조
Publication of KR890008886A publication Critical patent/KR890008886A/ko
Application granted granted Critical
Publication of KR970005760B1 publication Critical patent/KR970005760B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00—Gas-filled discharge tubes with solid cathode
    • H01J17/02—Details
    • H01J17/04—Electrodes; Screens
    • H01J17/06—Cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Abstract

내용 없음

Description

마이크로포인트 방출 음극을 가진 전자원과 상기 전자원을 이용한 필드 방출로 여기되는 음극루미네센스에 의한 디스플레이 수단
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 4 도는 여러 개의 연속 저항층을 이용한 본 발명에 의한 전자원의 한 가지 실시예의 개략도.
제 5 도는 제 4 도의 전자원의 제작 방법의 한 단계를 나타낸 개략도.
제 6 도는 본 발명에 의한 전자원의 다른 특수한 실시예의 제작 방법의 한 단계를 나타낸 개략도.

Claims (8)

  1. 한면에 전자 방출 재료로 이루어진 여러개의 마이크로포인트(12)가 있는 전기적 도체층(22)을 각각 가진 음극도체의 역할을 하는 평행한 제 1 전극(5)과, 상기 음극도체(5)와 전기적으로 절연되고 이와 각도를 두며 상기 음극도체(5)와 그리드의 교차 영역을 형성시켜 그리드의 역할을 하는 평행한 제 2 전극(10)이 포함되고, 상기 마이크로포인트(12)는 적어도 상기 교차 영역에 배치되고, 상기 그리드들(10)도 상기 면들과 마주보고 상기 마이크로포인트(12)와 각각 마주보는 구명(14)을 가지며, 각 마이크로포인트(12)의 첨단은 이와 애응되는 구멍과 같은 높이에 있고, 상기 그리드(10)가 이에 상응하는 음극도체(5)에 대하여 양으로 분극될 때 각 교차부의 마이크로포인트(12)가 전자를 방출시킬 수 있는 전자원에 있어서, 각 음극도체(5)는 상기 음극 도체의 각 마이크로포인트(12)에 흐르는 전류 강도를 제한하는 수단을 가지며, 상기 수단은 음극도체(5)의 도전층(22)에서 상기 도전층과 상기 상응하는 마이크로포인트(12) 사이에 위치한 연속 저항층(24,25)을 가지며, 상기 마이크로포인트(12)는 상기 저항층(24,25)에 있는 것을 특징으로 하는 전자원.
  2. 제 1 항에 있어서, 다수의 연속 저항층(24)은 전자원의 도전층에 각각 배치되어 있는 것을 특징으로 하는 전자원.
  3. 제 2 항에 있어서, 상기 다수의 저항층이 음극도체들 사이에서 단일한 연속 저항층을 에칭시켜 형성되는 것을 특징으로 하는 전자원.
  4. 제 1 항에 있어서, 상기 전자원은 전자원의 전체 도전층을 덮는 단일한 연속 저항층(25)이 포함되는 것을 특징으로 하는 전자원.
  5. 제 1 항에 있어서, 상기 각 도전층(22)은 알루미늄, 안티몬 또는 불소로 도핑된 산화주석, 니오븀 및 주석으로 도핑된 산화 인듐(Ⅲ)이 포함되는 군으로부터 선택된 재료로 제조되는 것을 특징으로 하는 전자원.
  6. 제 1 항에 있어서, 상기 각 저항층(24,25)은 In2O3, SnO2, Fe2O3Zn 및 도핑된 Si가 포함되는 군으로부터 선택되고, 도전층(22)을 이루는 재료보다 저항이 큰 재료로 제조되는 것을 특징으로하는 전자원.
  7. 제 1 항에 있어서, 각 저항층(24,25)은 고유저항이 약 102내지 106Ω.㎝의 범위인 것을 특징으로 하는 전자원.
  8. 마이크로포인트 방출 음극 전자원과 음극 루미네센스 양극(16)으로 구성된 음극 루미네센스 이스플레이 수단에 있어서, 상기 전자원은 특허청구범위 제 1 항에 따른 전자원인 것을 특징으로 하는 디스플레이 수단.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880014500A 1987-11-06 1988-11-04 마이크로포인트 방출 음극을 가진 전자원과 상기 전자원을 이용한 필드 방출로 여기되는 음극루미네센스에 의한 디스플레이 수단 KR970005760B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8715432A FR2623013A1 (fr) 1987-11-06 1987-11-06 Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
FR8715432 1987-11-06

Publications (2)

Publication Number Publication Date
KR890008886A true KR890008886A (ko) 1989-07-13
KR970005760B1 KR970005760B1 (ko) 1997-04-19

Family

ID=9356577

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880014500A KR970005760B1 (ko) 1987-11-06 1988-11-04 마이크로포인트 방출 음극을 가진 전자원과 상기 전자원을 이용한 필드 방출로 여기되는 음극루미네센스에 의한 디스플레이 수단

Country Status (6)

Country Link
US (1) US4940916B1 (ko)
EP (1) EP0316214B1 (ko)
JP (1) JPH07118259B2 (ko)
KR (1) KR970005760B1 (ko)
DE (1) DE3877902T2 (ko)
FR (1) FR2623013A1 (ko)

Families Citing this family (299)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2627308B1 (fr) * 1988-02-15 1990-06-01 Commissariat Energie Atomique Procede de commande d'un ecran d'affichage matriciel permettant d'ajuster son contraste et dispositif pour la mise en oeuvre de ce procede
US5354695A (en) 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JP2805326B2 (ja) * 1989-03-22 1998-09-30 キヤノン株式会社 電子源及びそれを用いた画像形成装置
FR2650119A1 (fr) * 1989-07-21 1991-01-25 Thomson Tubes Electroniques Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation
US4956574A (en) * 1989-08-08 1990-09-11 Motorola, Inc. Switched anode field emission device
EP0416625B1 (en) * 1989-09-07 1996-03-13 Canon Kabushiki Kaisha Electron emitting device, method for producing the same, and display apparatus and electron scribing apparatus utilizing same.
US5142184B1 (en) * 1990-02-09 1995-11-21 Motorola Inc Cold cathode field emission device with integral emitter ballasting
FR2661566B1 (fr) * 1990-04-25 1995-03-31 Commissariat Energie Atomique Laser compact a semi-conducteur du type a pompage electronique.
FR2663462B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
US5204581A (en) * 1990-07-12 1993-04-20 Bell Communications Research, Inc. Device including a tapered microminiature silicon structure
US5201992A (en) * 1990-07-12 1993-04-13 Bell Communications Research, Inc. Method for making tapered microminiature silicon structures
US5075591A (en) * 1990-07-13 1991-12-24 Coloray Display Corporation Matrix addressing arrangement for a flat panel display with field emission cathodes
US5103145A (en) * 1990-09-05 1992-04-07 Raytheon Company Luminance control for cathode-ray tube having field emission cathode
EP0504370A4 (en) * 1990-09-07 1992-12-23 Motorola, Inc. A field emission device employing a layer of single-crystal silicon
US5157309A (en) * 1990-09-13 1992-10-20 Motorola Inc. Cold-cathode field emission device employing a current source means
US5057047A (en) * 1990-09-27 1991-10-15 The United States Of America As Represented By The Secretary Of The Navy Low capacitance field emitter array and method of manufacture therefor
JP2562168Y2 (ja) * 1990-11-08 1998-02-10 双葉電子工業株式会社 電界放出素子
US5138220A (en) * 1990-12-05 1992-08-11 Science Applications International Corporation Field emission cathode of bio-molecular or semiconductor-metal eutectic composite microstructures
JP2613697B2 (ja) * 1991-01-16 1997-05-28 工業技術院長 電界放出素子
US5212426A (en) * 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
US5075595A (en) * 1991-01-24 1991-12-24 Motorola, Inc. Field emission device with vertically integrated active control
JP2626276B2 (ja) * 1991-02-06 1997-07-02 双葉電子工業株式会社 電子放出素子
US5347201A (en) * 1991-02-25 1994-09-13 Panocorp Display Systems Display device
US5660570A (en) * 1991-04-09 1997-08-26 Northeastern University Micro emitter based low contact force interconnection device
US5220725A (en) * 1991-04-09 1993-06-22 Northeastern University Micro-emitter-based low-contact-force interconnection device
US5245248A (en) * 1991-04-09 1993-09-14 Northeastern University Micro-emitter-based low-contact-force interconnection device
JP3235172B2 (ja) * 1991-05-13 2001-12-04 セイコーエプソン株式会社 電界電子放出装置
JP2738197B2 (ja) * 1992-01-27 1998-04-08 松下電器産業株式会社 電子放出素子
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
FR2679653B1 (fr) * 1991-07-23 1993-09-24 Commissariat Energie Atomique Vacumetre a ionisation.
JPH0547296A (ja) * 1991-08-14 1993-02-26 Sharp Corp 電界放出型電子源及びその製造方法
US5227699A (en) * 1991-08-16 1993-07-13 Amoco Corporation Recessed gate field emission
JP2720662B2 (ja) * 1991-09-30 1998-03-04 双葉電子工業株式会社 電界放出素子及びその製造方法
US5536193A (en) * 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
DE69204629T2 (de) * 1991-11-29 1996-04-18 Motorola Inc Herstellungsverfahren einer Feldemissionsvorrichtung mit integraler elektrostatischer Linsenanordnung.
US5199917A (en) * 1991-12-09 1993-04-06 Cornell Research Foundation, Inc. Silicon tip field emission cathode arrays and fabrication thereof
US5627427A (en) * 1991-12-09 1997-05-06 Cornell Research Foundation, Inc. Silicon tip field emission cathodes
US5371431A (en) * 1992-03-04 1994-12-06 Mcnc Vertical microelectronic field emission devices including elongate vertical pillars having resistive bottom portions
US6127773A (en) * 1992-03-16 2000-10-03 Si Diamond Technology, Inc. Amorphic diamond film flat field emission cathode
US5679043A (en) * 1992-03-16 1997-10-21 Microelectronics And Computer Technology Corporation Method of making a field emitter
US5600200A (en) * 1992-03-16 1997-02-04 Microelectronics And Computer Technology Corporation Wire-mesh cathode
US5548185A (en) * 1992-03-16 1996-08-20 Microelectronics And Computer Technology Corporation Triode structure flat panel display employing flat field emission cathode
US5543684A (en) 1992-03-16 1996-08-06 Microelectronics And Computer Technology Corporation Flat panel display based on diamond thin films
US5449970A (en) * 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5763997A (en) * 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
US5675216A (en) * 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US5616991A (en) * 1992-04-07 1997-04-01 Micron Technology, Inc. Flat panel display in which low-voltage row and column address signals control a much higher pixel activation voltage
US5581159A (en) * 1992-04-07 1996-12-03 Micron Technology, Inc. Back-to-back diode current regulator for field emission display
US5956004A (en) * 1993-05-11 1999-09-21 Micron Technology, Inc. Controlling pixel brightness in a field emission display using circuits for sampling and discharging
US5357172A (en) * 1992-04-07 1994-10-18 Micron Technology, Inc. Current-regulated field emission cathodes for use in a flat panel display in which low-voltage row and column address signals control a much higher pixel activation voltage
US6714625B1 (en) 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
US5424605A (en) * 1992-04-10 1995-06-13 Silicon Video Corporation Self supporting flat video display
US5477105A (en) * 1992-04-10 1995-12-19 Silicon Video Corporation Structure of light-emitting device with raised black matrix for use in optical devices such as flat-panel cathode-ray tubes
US5753130A (en) * 1992-05-15 1998-05-19 Micron Technology, Inc. Method for forming a substantially uniform array of sharp tips
US5391259A (en) * 1992-05-15 1995-02-21 Micron Technology, Inc. Method for forming a substantially uniform array of sharp tips
US5302238A (en) * 1992-05-15 1994-04-12 Micron Technology, Inc. Plasma dry etch to produce atomically sharp asperities useful as cold cathodes
US5283500A (en) * 1992-05-28 1994-02-01 At&T Bell Laboratories Flat panel field emission display apparatus
GB2268324A (en) * 1992-06-30 1994-01-05 Ibm Colour field emission display.
US5359256A (en) * 1992-07-30 1994-10-25 The United States Of America As Represented By The Secretary Of The Navy Regulatable field emitter device and method of production thereof
US5347292A (en) * 1992-10-28 1994-09-13 Panocorp Display Systems Super high resolution cold cathode fluorescent display
US5291572A (en) * 1993-01-14 1994-03-01 At&T Bell Laboratories Article comprising compression bonded parts
JPH08507643A (ja) * 1993-03-11 1996-08-13 フェド．コーポレイション エミッタ先端構造体及び該エミッタ先端構造体を備える電界放出装置並びにその製造方法
US5717285A (en) * 1993-03-17 1998-02-10 Commissariat A L 'energie Atomique Microtip display device having a current limiting layer and a charge avoiding layer
US5642017A (en) * 1993-05-11 1997-06-24 Micron Display Technology, Inc. Matrix-addressable flat panel field emission display having only one transistor for pixel control at each row and column intersection
US5686790A (en) * 1993-06-22 1997-11-11 Candescent Technologies Corporation Flat panel device with ceramic backplate
JPH0721903A (ja) * 1993-07-01 1995-01-24 Nec Corp 電界放出型陰極を用いた陰極線管用電子銃構体
FR2707795B1 (fr) * 1993-07-12 1995-08-11 Commissariat Energie Atomique Perfectionnement à un procédé de fabrication d'une source d'électrons à micropointes.
US5495143A (en) * 1993-08-12 1996-02-27 Science Applications International Corporation Gas discharge device having a field emitter array with microscopic emitter elements
US7025892B1 (en) 1993-09-08 2006-04-11 Candescent Technologies Corporation Method for creating gated filament structures for field emission displays
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
JP2699827B2 (ja) * 1993-09-27 1998-01-19 双葉電子工業株式会社 電界放出カソード素子
FR2711273B1 (fr) * 1993-10-14 1996-01-19 Pixel Int Sa Ecran plat à anode doublement commutée, utilisant des bandes de couleur dans le sens des lignes .
JP2861755B2 (ja) * 1993-10-28 1999-02-24 日本電気株式会社 電界放出型陰極装置
AU1043895A (en) * 1993-11-04 1995-05-23 Microelectronics And Computer Technology Corporation Methods for fabricating flat panel display systems and components
KR100225561B1 (ko) * 1993-11-29 1999-10-15 니시무로 아츠시 전계방출형 전자원
US5461009A (en) * 1993-12-08 1995-10-24 Industrial Technology Research Institute Method of fabricating high uniformity field emission display
US5445550A (en) * 1993-12-22 1995-08-29 Xie; Chenggang Lateral field emitter device and method of manufacturing same
JP2809078B2 (ja) * 1993-12-28 1998-10-08 日本電気株式会社 電界放出冷陰極およびその製造方法
US5451830A (en) * 1994-01-24 1995-09-19 Industrial Technology Research Institute Single tip redundancy method with resistive base and resultant flat panel display
JP2856672B2 (ja) * 1994-02-28 1999-02-10 三星電管株式會社 電界電子放出素子及びその製造方法
FR2717304B1 (fr) * 1994-03-09 1996-04-05 Commissariat Energie Atomique Source d'électrons à cathodes émissives à micropointes.
JP3249288B2 (ja) * 1994-03-15 2002-01-21 株式会社東芝 微小真空管およびその製造方法
JP3388870B2 (ja) * 1994-03-15 2003-03-24 株式会社東芝 微小３極真空管およびその製造方法
US5448131A (en) * 1994-04-13 1995-09-05 Texas Instruments Incorporated Spacer for flat panel display
FR2719156B1 (fr) * 1994-04-25 1996-05-24 Commissariat Energie Atomique Source d'électrons à micropointes, les micropointes comportant deux parties.
JPH0845445A (ja) * 1994-04-29 1996-02-16 Texas Instr Inc <Ti> フラット・パネル・ディスプレイ装置及びその製造方法
US5538450A (en) * 1994-04-29 1996-07-23 Texas Instruments Incorporated Method of forming a size-arrayed emitter matrix for use in a flat panel display
KR950034365A (ko) * 1994-05-24 1995-12-28 윌리엄 이. 힐러 평판 디스플레이의 애노드 플레이트 및 이의 제조 방법
US5473218A (en) * 1994-05-31 1995-12-05 Motorola, Inc. Diamond cold cathode using patterned metal for electron emission control
US5491376A (en) * 1994-06-03 1996-02-13 Texas Instruments Incorporated Flat panel display anode plate having isolation grooves
US5453659A (en) * 1994-06-10 1995-09-26 Texas Instruments Incorporated Anode plate for flat panel display having integrated getter
US5607335A (en) * 1994-06-29 1997-03-04 Silicon Video Corporation Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material
FR2722913B1 (fr) * 1994-07-21 1996-10-11 Pixel Int Sa Cathode a micropointes pour ecran plat
US5698933A (en) * 1994-07-25 1997-12-16 Motorola, Inc. Field emission device current control apparatus and method
US5920154A (en) * 1994-08-02 1999-07-06 Micron Technology, Inc. Field emission display with video signal on column lines
FR2723471B1 (fr) * 1994-08-05 1996-10-31 Pixel Int Sa Cathode d'ecran plat de visualisation a resistance d'acces constante
US6204834B1 (en) 1994-08-17 2001-03-20 Si Diamond Technology, Inc. System and method for achieving uniform screen brightness within a matrix display
GB9416754D0 (en) * 1994-08-18 1994-10-12 Isis Innovation Field emitter structures
US5525857A (en) * 1994-08-19 1996-06-11 Texas Instruments Inc. Low density, high porosity material as gate dielectric for field emission device
FR2724041B1 (fr) * 1994-08-24 1997-04-11 Pixel Int Sa Ecran plat de visualisation a haute tension inter-electrodes
EP0700065B1 (en) * 1994-08-31 2001-09-19 AT&amp;T Corp. Field emission device and method for making same
US5504385A (en) * 1994-08-31 1996-04-02 At&T Corp. Spaced-gate emission device and method for making same
US5531880A (en) * 1994-09-13 1996-07-02 Microelectronics And Computer Technology Corporation Method for producing thin, uniform powder phosphor for display screens
EP0707301A1 (en) 1994-09-14 1996-04-17 Texas Instruments Incorporated Power management for a display device
US5975975A (en) * 1994-09-16 1999-11-02 Micron Technology, Inc. Apparatus and method for stabilization of threshold voltage in field emission displays
TW289864B (ko) * 1994-09-16 1996-11-01 Micron Display Tech Inc
US6417605B1 (en) * 1994-09-16 2002-07-09 Micron Technology, Inc. Method of preventing junction leakage in field emission devices
US5528108A (en) * 1994-09-22 1996-06-18 Motorola Field emission device arc-suppressor
FR2725072A1 (fr) * 1994-09-28 1996-03-29 Pixel Int Sa Protection electrique d'une anode d'ecran plat de visualisation
US6252569B1 (en) * 1994-09-28 2001-06-26 Texas Instruments Incorporated Large field emission display (FED) made up of independently operated display sections integrated behind one common continuous large anode which displays one large image or multiple independent images
US5521660A (en) * 1994-09-29 1996-05-28 Texas Instruments Inc. Multimedia field emission device portable projector
EP0706164A1 (en) 1994-10-03 1996-04-10 Texas Instruments Incorporated Power management for display devices
US5528098A (en) * 1994-10-06 1996-06-18 Motorola Redundant conductor electron source
US5669690A (en) 1994-10-18 1997-09-23 Texas Instruments Incorporated Multimedia field emission device projection system
FR2726122B1 (fr) 1994-10-19 1996-11-22 Commissariat Energie Atomique Procede de fabrication d'une source d'electrons a micropointes
FR2726098B1 (fr) 1994-10-24 1997-01-10 Commissariat Energie Atomique Procede de photolithogravure de motifs circulaires denses
US5623180A (en) 1994-10-31 1997-04-22 Lucent Technologies Inc. Electron field emitters comprising particles cooled with low voltage emitting material
US5637950A (en) * 1994-10-31 1997-06-10 Lucent Technologies Inc. Field emission devices employing enhanced diamond field emitters
US5527651A (en) * 1994-11-02 1996-06-18 Texas Instruments Inc. Field emission device light source for xerographic printing process
KR100287271B1 (ko) 1994-11-04 2001-04-16 마이크론 테크놀로지 인코포레이티드 저온 산화공정을 사용하여 이미터 사이트를 예리하게 하는 방법
FR2726689B1 (fr) 1994-11-08 1996-11-29 Commissariat Energie Atomique Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence
FR2726688B1 (fr) 1994-11-08 1996-12-06 Commissariat Energie Atomique Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence
US5569975A (en) * 1994-11-18 1996-10-29 Texas Instruments Incorporated Cluster arrangement of field emission microtips
US5557159A (en) * 1994-11-18 1996-09-17 Texas Instruments Incorporated Field emission microtip clusters adjacent stripe conductors
US5486126A (en) 1994-11-18 1996-01-23 Micron Display Technology, Inc. Spacers for large area displays
EP0713236A1 (en) 1994-11-18 1996-05-22 Texas Instruments Incorporated Electron emission apparatus
US5541466A (en) * 1994-11-18 1996-07-30 Texas Instruments Incorporated Cluster arrangement of field emission microtips on ballast layer
US5536993A (en) * 1994-11-18 1996-07-16 Texas Instruments Incorporated Clustered field emission microtips adjacent stripe conductors
WO1996018204A1 (en) * 1994-12-05 1996-06-13 Color Planar Displays, Inc. Support structure for flat panel displays
US5477284A (en) 1994-12-15 1995-12-19 Texas Instruments Incorporated Dual mode overhead projection system using field emission device
US5616368A (en) * 1995-01-31 1997-04-01 Lucent Technologies Inc. Field emission devices employing activated diamond particle emitters and methods for making same
US5709577A (en) * 1994-12-22 1998-01-20 Lucent Technologies Inc. Method of making field emission devices employing ultra-fine diamond particle emitters
US5554828A (en) * 1995-01-03 1996-09-10 Texas Instruments Inc. Integration of pen-based capability into a field emission device system
US5561340A (en) * 1995-01-31 1996-10-01 Lucent Technologies Inc. Field emission display having corrugated support pillars and method for manufacturing
US5598056A (en) * 1995-01-31 1997-01-28 Lucent Technologies Inc. Multilayer pillar structure for improved field emission devices
JP2932250B2 (ja) 1995-01-31 1999-08-09 キヤノン株式会社 電子放出素子、電子源、画像形成装置及びそれらの製造方法
US5598057A (en) 1995-03-13 1997-01-28 Texas Instruments Incorporated Reduction of the probability of interlevel oxide failures by minimization of lead overlap area through bus width reduction
US5578902A (en) * 1995-03-13 1996-11-26 Texas Instruments Inc. Field emission display having modified anode stripe geometry
FR2731840B1 (fr) * 1995-03-17 1997-06-06 Pixtech Sa Ecran plat de visualisation a distance inter-electrodes elevee
US5578896A (en) * 1995-04-10 1996-11-26 Industrial Technology Research Institute Cold cathode field emission display and method for forming it
US5601466A (en) * 1995-04-19 1997-02-11 Texas Instruments Incorporated Method for fabricating field emission device metallization
US5594297A (en) * 1995-04-19 1997-01-14 Texas Instruments Incorporated Field emission device metallization including titanium tungsten and aluminum
US5760858A (en) * 1995-04-21 1998-06-02 Texas Instruments Incorporated Field emission device panel backlight for liquid crystal displays
US6296740B1 (en) 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
US5628659A (en) * 1995-04-24 1997-05-13 Microelectronics And Computer Corporation Method of making a field emission electron source with random micro-tip structures
US5657053A (en) * 1995-04-26 1997-08-12 Texas Instruments Incorporated Method for determining pen location on display apparatus using piezoelectric point elements
US5657054A (en) * 1995-04-26 1997-08-12 Texas Instruments Incorporated Determination of pen location on display apparatus using piezoelectric point elements
US5591352A (en) * 1995-04-27 1997-01-07 Industrial Technology Research Institute High resolution cold cathode field emission display method
US5630741A (en) * 1995-05-08 1997-05-20 Advanced Vision Technologies, Inc. Fabrication process for a field emission display cell structure
US5644188A (en) * 1995-05-08 1997-07-01 Advanced Vision Technologies, Inc. Field emission display cell structure
US5543691A (en) * 1995-05-11 1996-08-06 Raytheon Company Field emission display with focus grid and method of operating same
US5633120A (en) * 1995-05-22 1997-05-27 Texas Instruments Inc. Method for achieving anode stripe delineation from an interlevel dielectric etch in a field emission device
US5608285A (en) * 1995-05-25 1997-03-04 Texas Instruments Incorporated Black matrix sog as an interlevel dielectric in a field emission device
US5577943A (en) * 1995-05-25 1996-11-26 Texas Instruments Inc. Method for fabricating a field emission device having black matrix SOG as an interlevel dielectric
US5759078A (en) * 1995-05-30 1998-06-02 Texas Instruments Incorporated Field emission device with close-packed microtip array
US5621272A (en) * 1995-05-30 1997-04-15 Texas Instruments Incorporated Field emission device with over-etched gate dielectric
US5589728A (en) * 1995-05-30 1996-12-31 Texas Instruments Incorporated Field emission device with lattice vacancy post-supported gate
US5686782A (en) * 1995-05-30 1997-11-11 Texas Instruments Incorporated Field emission device with suspended gate
US5558554A (en) * 1995-05-31 1996-09-24 Texas Instruments Inc. Method for fabricating a field emission device anode plate having multiple grooves between anode conductors
US5594305A (en) * 1995-06-07 1997-01-14 Texas Instruments Incorporated Power supply for use with switched anode field emission display including energy recovery apparatus
FR2735265B1 (fr) * 1995-06-08 1997-08-22 Pixtech Sa Commutation d'une anode d'ecran plat de visualisation
FR2735266B1 (fr) * 1995-06-08 1997-08-22 Pixtech Sa Procede de commande d'ecran plat de visualisation
US5666024A (en) * 1995-06-23 1997-09-09 Texas Instruments Incorporated Low capacitance field emission device with circular microtip array
US5674407A (en) * 1995-07-03 1997-10-07 Texas Instruments Incorporated Method for selective etching of flat panel display anode plate conductors
US5611719A (en) * 1995-07-06 1997-03-18 Texas Instruments Incorporated Method for improving flat panel display anode plate phosphor efficiency
US5585301A (en) * 1995-07-14 1996-12-17 Micron Display Technology, Inc. Method for forming high resistance resistors for limiting cathode current in field emission displays
US5637951A (en) * 1995-08-10 1997-06-10 Ion Diagnostics, Inc. Electron source for multibeam electron lithography system
US5663742A (en) * 1995-08-21 1997-09-02 Micron Display Technology, Inc. Compressed field emission display
US5635791A (en) * 1995-08-24 1997-06-03 Texas Instruments Incorporated Field emission device with circular microtip array
US5773927A (en) * 1995-08-30 1998-06-30 Micron Display Technology, Inc. Field emission display device with focusing electrodes at the anode and method for constructing same
US5606225A (en) * 1995-08-30 1997-02-25 Texas Instruments Incorporated Tetrode arrangement for color field emission flat panel display with barrier electrodes on the anode plate
US5628662A (en) * 1995-08-30 1997-05-13 Texas Instruments Incorporated Method of fabricating a color field emission flat panel display tetrode
US5763998A (en) * 1995-09-14 1998-06-09 Chorus Corporation Field emission display arrangement with improved vacuum control
US5716251A (en) * 1995-09-15 1998-02-10 Micron Display Technology, Inc. Sacrificial spacers for large area displays
US5672938A (en) * 1995-09-29 1997-09-30 Fed Corporation Light emission device comprising light emitting organic material and electron injection enhancement structure
US6181308B1 (en) 1995-10-16 2001-01-30 Micron Technology, Inc. Light-insensitive resistor for current-limiting of field emission displays
US5772488A (en) * 1995-10-16 1998-06-30 Micron Display Technology, Inc. Method of forming a doped field emitter array
US5818165A (en) * 1995-10-27 1998-10-06 Texas Instruments Incorporated Flexible fed display
US5831384A (en) * 1995-10-30 1998-11-03 Advanced Vision Technologies, Inc. Dual carrier display device
US5669802A (en) * 1995-10-30 1997-09-23 Advanced Vision Technologies, Inc. Fabrication process for dual carrier display device
US5672933A (en) * 1995-10-30 1997-09-30 Texas Instruments Incorporated Column-to-column isolation in fed display
KR970023568A (ko) * 1995-10-31 1997-05-30 윤종용 전계 방출 표시소자와 그 구동 방법 및 제조 방법
US5648699A (en) * 1995-11-09 1997-07-15 Lucent Technologies Inc. Field emission devices employing improved emitters on metal foil and methods for making such devices
US5656892A (en) * 1995-11-17 1997-08-12 Micron Display Technology, Inc. Field emission display having emitter control with current sensing feedback
US5767619A (en) * 1995-12-15 1998-06-16 Industrial Technology Research Institute Cold cathode field emission display and method for forming it
US6031250A (en) 1995-12-20 2000-02-29 Advanced Technology Materials, Inc. Integrated circuit devices and methods employing amorphous silicon carbide resistor materials
US6680489B1 (en) 1995-12-20 2004-01-20 Advanced Technology Materials, Inc. Amorphous silicon carbide thin film coating
US5656886A (en) * 1995-12-29 1997-08-12 Micron Display Technology, Inc. Technique to improve uniformity of large area field emission displays
US5916004A (en) * 1996-01-11 1999-06-29 Micron Technology, Inc. Photolithographically produced flat panel display surface plate support structure
US6252347B1 (en) 1996-01-16 2001-06-26 Raytheon Company Field emission display with suspended focusing conductive sheet
US5952987A (en) * 1996-01-18 1999-09-14 Micron Technology, Inc. Method and apparatus for improved gray scale control in field emission displays
US5705079A (en) * 1996-01-19 1998-01-06 Micron Display Technology, Inc. Method for forming spacers in flat panel displays using photo-etching
US6117294A (en) 1996-01-19 2000-09-12 Micron Technology, Inc. Black matrix material and methods related thereto
JPH09219144A (ja) * 1996-02-08 1997-08-19 Futaba Corp 電界放出カソードとその製造方法
US5593562A (en) * 1996-02-20 1997-01-14 Texas Instruments Incorporated Method for improving flat panel display anode plate phosphor efficiency
US5733160A (en) * 1996-03-01 1998-03-31 Texas Instruments Incorporated Method of forming spacers for a flat display apparatus
US5695658A (en) * 1996-03-07 1997-12-09 Micron Display Technology, Inc. Non-photolithographic etch mask for submicron features
US5944975A (en) * 1996-03-26 1999-08-31 Texas Instruments Incorporated Method of forming a lift-off layer having controlled adhesion strength
US5956002A (en) * 1996-03-28 1999-09-21 Tektronix, Inc. Structures and methods for limiting current in ionizable gaseous medium devices
US5684356A (en) * 1996-03-29 1997-11-04 Texas Instruments Incorporated Hydrogen-rich, low dielectric constant gate insulator for field emission device
JP3134772B2 (ja) * 1996-04-16 2001-02-13 双葉電子工業株式会社 電界放出型表示素子およびその駆動方法
FR2747839B1 (fr) * 1996-04-18 1998-07-03 Pixtech Sa Ecran plat de visualisation a source d'hydrogene
US5830527A (en) * 1996-05-29 1998-11-03 Texas Instruments Incorporated Flat panel display anode structure and method of making
US6187603B1 (en) 1996-06-07 2001-02-13 Candescent Technologies Corporation Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material
US5865657A (en) * 1996-06-07 1999-02-02 Candescent Technologies Corporation Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material
US5865659A (en) * 1996-06-07 1999-02-02 Candescent Technologies Corporation Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements
US5755944A (en) * 1996-06-07 1998-05-26 Candescent Technologies Corporation Formation of layer having openings produced by utilizing particles deposited under influence of electric field
US5811926A (en) * 1996-06-18 1998-09-22 Ppg Industries, Inc. Spacer units, image display panels and methods for making and using the same
US5834891A (en) * 1996-06-18 1998-11-10 Ppg Industries, Inc. Spacers, spacer units, image display panels and methods for making and using the same
JPH1012125A (ja) * 1996-06-19 1998-01-16 Nec Corp 電界電子放出装置
JP3026484B2 (ja) * 1996-08-23 2000-03-27 日本電気株式会社 電界放出型冷陰極
US5854615A (en) * 1996-10-03 1998-12-29 Micron Display Technology, Inc. Matrix addressable display with delay locked loop controller
DE69621017T2 (de) 1996-10-04 2002-10-31 St Microelectronics Srl Herstellungsverfahren einer flachen Feldemissionsanzeige und nach diesem Verfahren hergestellte Anzeige
US5902491A (en) * 1996-10-07 1999-05-11 Micron Technology, Inc. Method of removing surface protrusions from thin films
US6010917A (en) * 1996-10-15 2000-01-04 Micron Technology, Inc. Electrically isolated interconnects and conductive layers in semiconductor device manufacturing
US5847515A (en) * 1996-11-01 1998-12-08 Micron Technology, Inc. Field emission display having multiple brightness display modes
US6130106A (en) * 1996-11-14 2000-10-10 Micron Technology, Inc. Method for limiting emission current in field emission devices
US5836799A (en) * 1996-12-06 1998-11-17 Texas Instruments Incorporated Self-aligned method of micro-machining field emission display microtips
FR2756969B1 (fr) * 1996-12-06 1999-01-08 Commissariat Energie Atomique Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source
US5984746A (en) 1996-12-12 1999-11-16 Micron Technology, Inc. Attaching spacers in a display device
US5938493A (en) * 1996-12-18 1999-08-17 Texas Instruments Incorporated Method for increasing field emission tip efficiency through micro-milling techniques
US5780960A (en) * 1996-12-18 1998-07-14 Texas Instruments Incorporated Micro-machined field emission microtips
US5851133A (en) 1996-12-24 1998-12-22 Micron Display Technology, Inc. FED spacer fibers grown by laser drive CVD
US5770919A (en) * 1996-12-31 1998-06-23 Micron Technology, Inc. Field emission device micropoint with current-limiting resistive structure and method for making same
US5888112A (en) * 1996-12-31 1999-03-30 Micron Technology, Inc. Method for forming spacers on a display substrate
US6015323A (en) 1997-01-03 2000-01-18 Micron Technology, Inc. Field emission display cathode assembly government rights
US5828163A (en) * 1997-01-13 1998-10-27 Fed Corporation Field emitter device with a current limiter structure
US6262530B1 (en) * 1997-02-25 2001-07-17 Ivan V. Prein Field emission devices with current stabilizer(s)
JP3104639B2 (ja) * 1997-03-31 2000-10-30 日本電気株式会社 電界放出型冷陰極
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6064148A (en) * 1997-05-21 2000-05-16 Si Diamond Technology, Inc. Field emission device
US6002199A (en) * 1997-05-30 1999-12-14 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having ladder-like emitter electrode
JPH10340666A (ja) * 1997-06-09 1998-12-22 Futaba Corp 電界電子放出素子
US6013986A (en) * 1997-06-30 2000-01-11 Candescent Technologies Corporation Electron-emitting device having multi-layer resistor
KR100453187B1 (ko) * 1997-07-23 2004-12-29 삼성에스디아이 주식회사 전자총의음극구조체용전계방출소자
JP3107007B2 (ja) * 1997-08-11 2000-11-06 日本電気株式会社 電界放出型冷陰極および電子管
JPH1186719A (ja) * 1997-09-05 1999-03-30 Yamaha Corp 電界放射型素子の製造方法
FR2769751B1 (fr) 1997-10-14 1999-11-12 Commissariat Energie Atomique Source d'electrons a micropointes, a grille de focalisation et a densite elevee de micropointes, et ecran plat utilisant une telle source
US6144144A (en) * 1997-10-31 2000-11-07 Candescent Technologies Corporation Patterned resistor suitable for electron-emitting device
US6255769B1 (en) 1997-12-29 2001-07-03 Micron Technology, Inc. Field emission displays with raised conductive features at bonding locations and methods of forming the raised conductive features
AU2858299A (en) * 1998-03-21 1999-10-18 Korea Advanced Institute Of Science & Technology Line field emitter display
CN1279562C (zh) * 1998-04-30 2006-10-11 叶夫根尼·因维维奇·吉瓦吉佐夫 稳定和受控的电子源,电子源的矩阵系统以及它们的生产的方法
US6107728A (en) * 1998-04-30 2000-08-22 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having electrode with openings that facilitate short-circuit repair
US6174449B1 (en) 1998-05-14 2001-01-16 Micron Technology, Inc. Magnetically patterned etch mask
FR2779243B1 (fr) 1998-05-26 2000-07-07 Commissariat Energie Atomique Procede de realisation par photolithographie d'ouvertures auto-alignees sur une structure, en particulier pour ecran plat a micropointes
US6326725B1 (en) 1998-05-26 2001-12-04 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6558570B2 (en) 1998-07-01 2003-05-06 Micron Technology, Inc. Polishing slurry and method for chemical-mechanical polishing
US6190223B1 (en) 1998-07-02 2001-02-20 Micron Technology, Inc. Method of manufacture of composite self-aligned extraction grid and in-plane focusing ring
US6028322A (en) * 1998-07-22 2000-02-22 Micron Technology, Inc. Double field oxide in field emission display and method
US6176752B1 (en) 1998-09-10 2001-01-23 Micron Technology, Inc. Baseplate and a method for manufacturing a baseplate for a field emission display
US6630772B1 (en) 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
US6328620B1 (en) 1998-12-04 2001-12-11 Micron Technology, Inc. Apparatus and method for forming cold-cathode field emission displays
US6283812B1 (en) 1999-01-25 2001-09-04 Agere Systems Guardian Corp. Process for fabricating article comprising aligned truncated carbon nanotubes
US6250984B1 (en) 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
US6504291B1 (en) * 1999-02-23 2003-01-07 Micron Technology, Inc. Focusing electrode and method for field emission displays
JP3595718B2 (ja) 1999-03-15 2004-12-02 株式会社東芝 表示素子およびその製造方法
KR100334017B1 (ko) 1999-03-18 2002-04-26 김순택 평판 디스플레이
JP3600126B2 (ja) * 1999-07-29 2004-12-08 シャープ株式会社 電子源アレイ及び電子源アレイの駆動方法
US7052350B1 (en) * 1999-08-26 2006-05-30 Micron Technology, Inc. Field emission device having insulated column lines and method manufacture
US6635983B1 (en) * 1999-09-02 2003-10-21 Micron Technology, Inc. Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate
JP3878365B2 (ja) * 1999-09-09 2007-02-07 株式会社日立製作所 画像表示装置および画像表示装置の製造方法
US6541908B1 (en) * 1999-09-30 2003-04-01 Rockwell Science Center, Llc Electronic light emissive displays incorporating transparent and conductive zinc oxide thin film
US6155900A (en) * 1999-10-12 2000-12-05 Micron Technology, Inc. Fiber spacers in large area vacuum displays and method for manufacture
US6741019B1 (en) 1999-10-18 2004-05-25 Agere Systems, Inc. Article comprising aligned nanowires
US6710525B1 (en) 1999-10-19 2004-03-23 Candescent Technologies Corporation Electrode structure and method for forming electrode structure for a flat panel display
US6989631B2 (en) * 2001-06-08 2006-01-24 Sony Corporation Carbon cathode of a field emission display with in-laid isolation barrier and support
US6469436B1 (en) * 2000-01-14 2002-10-22 Micron Technology, Inc. Radiation shielding for field emitters
US6424083B1 (en) 2000-02-09 2002-07-23 Motorola, Inc. Field emission device having an improved ballast resistor
JP2001319564A (ja) * 2000-05-08 2001-11-16 Canon Inc 電子源形成用基板、該基板を用いた電子源並びに画像表示装置
FR2809862B1 (fr) 2000-05-30 2003-10-17 Pixtech Sa Ecran plat de visualisation a memoire d'adressage
US6611093B1 (en) 2000-09-19 2003-08-26 Display Research Laboratories, Inc. Field emission display with transparent cathode
US6748994B2 (en) * 2001-04-11 2004-06-15 Avery Dennison Corporation Label applicator, method and label therefor
US7002290B2 (en) * 2001-06-08 2006-02-21 Sony Corporation Carbon cathode of a field emission display with integrated isolation barrier and support on substrate
US6682382B2 (en) * 2001-06-08 2004-01-27 Sony Corporation Method for making wires with a specific cross section for a field emission display
US6756730B2 (en) * 2001-06-08 2004-06-29 Sony Corporation Field emission display utilizing a cathode frame-type gate and anode with alignment method
US6903504B2 (en) * 2002-01-29 2005-06-07 Canon Kabushiki Kaisha Electron source plate, image-forming apparatus using the same, and fabricating method thereof
US6791278B2 (en) * 2002-04-16 2004-09-14 Sony Corporation Field emission display using line cathode structure
US6873118B2 (en) * 2002-04-16 2005-03-29 Sony Corporation Field emission cathode structure using perforated gate
US7402897B2 (en) * 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US7012582B2 (en) * 2002-11-27 2006-03-14 Sony Corporation Spacer-less field emission display
KR100576733B1 (ko) * 2003-01-15 2006-05-03 학교법인 포항공과대학교 일체형 3극구조 전계방출디스플레이 및 그 제조 방법
US20040145299A1 (en) * 2003-01-24 2004-07-29 Sony Corporation Line patterned gate structure for a field emission display
US20040189552A1 (en) * 2003-03-31 2004-09-30 Sony Corporation Image display device incorporating driver circuits on active substrate to reduce interconnects
US7071629B2 (en) * 2003-03-31 2006-07-04 Sony Corporation Image display device incorporating driver circuits on active substrate and other methods to reduce interconnects
FR2863102B1 (fr) * 2003-12-02 2006-04-28 Commissariat Energie Atomique Dispositifs a emission de champ.
JP2005340133A (ja) * 2004-05-31 2005-12-08 Sony Corp カソードパネル処理方法、並びに、冷陰極電界電子放出表示装置及びその製造方法
US20060113888A1 (en) * 2004-12-01 2006-06-01 Huai-Yuan Tseng Field emission display device with protection structure
US7564178B2 (en) * 2005-02-14 2009-07-21 Agere Systems Inc. High-density field emission elements and a method for forming said emission elements
FR2899991B1 (fr) * 2006-04-14 2009-03-20 Commissariat Energie Atomique Procede de commande d'un dispositif de visualisation matriciel a source d'electrons
JP2007294126A (ja) * 2006-04-21 2007-11-08 Canon Inc 電子放出素子、電子源、画像表示装置、及び、電子放出素子の製造方法
FR2907959B1 (fr) 2006-10-30 2009-02-13 Commissariat Energie Atomique Procede de commande d'un dispositif de visualisation matriciel a source d'electrons a consommation capacitive reduite
CN101192490B (zh) * 2006-11-24 2010-09-29 清华大学 表面传导电子发射元件以及应用表面传导电子发射元件的电子源
CN101192494B (zh) * 2006-11-24 2010-09-29 清华大学 电子发射元件的制备方法
KR20080075360A (ko) * 2007-02-12 2008-08-18 삼성에스디아이 주식회사 발광 장치 및 이를 이용한 표시장치
WO2013136299A1 (en) * 2012-03-16 2013-09-19 Nanox Imaging Limited Devices having an electron emitting structure
US9053890B2 (en) 2013-08-02 2015-06-09 University Health Network Nanostructure field emission cathode structure and method for making

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3453478A (en) * 1966-05-31 1969-07-01 Stanford Research Inst Needle-type electron source
US3789471A (en) * 1970-02-06 1974-02-05 Stanford Research Inst Field emission cathode structures, devices utilizing such structures, and methods of producing such structures
US3671798A (en) * 1970-12-11 1972-06-20 Nasa Method and apparatus for limiting field-emission current
US3735186A (en) * 1971-03-10 1973-05-22 Philips Corp Field emission cathode
US3935500A (en) * 1974-12-09 1976-01-27 Texas Instruments Incorporated Flat CRT system
JPS57187849A (en) * 1981-05-15 1982-11-18 Nippon Telegr & Teleph Corp <Ntt> Electron gun
US4663559A (en) * 1982-09-17 1987-05-05 Christensen Alton O Field emission device
US4513308A (en) * 1982-09-23 1985-04-23 The United States Of America As Represented By The Secretary Of The Navy p-n Junction controlled field emitter array cathode
FR2593953B1 (fr) * 1986-01-24 1988-04-29 Commissariat Energie Atomique Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes

Also Published As

Publication number Publication date
FR2623013A1 (fr) 1989-05-12
DE3877902D1 (de) 1993-03-11
US4940916B1 (en) 1996-11-26
EP0316214B1 (fr) 1993-01-27
JPH01154426A (ja) 1989-06-16
JPH07118259B2 (ja) 1995-12-18
EP0316214A1 (fr) 1989-05-17
DE3877902T2 (de) 1993-07-15
US4940916A (en) 1990-07-10
KR970005760B1 (ko) 1997-04-19

Similar Documents

Publication Publication Date Title
KR890008886A (ko) 마이크로포인트 방출 음극을 가진 전자원과 상기 전자원을 이용한 필드 방출로 여기되는 음극루미네센스에 의한 디스플레이 수단
US6191433B1 (en) OLED display device and method for patterning cathodes of the device
US5592056A (en) Electrical protection of an anode of a flat display screen
KR920001744A (ko) 마이크로도트(Micrdodt)방출 캐소드 전자원
KR960700515A (ko) 필드 방사 장치(field-effect emitter device)
KR970071899A (ko) 전자 방출 장치, 그것을 사용하는 화상 형성 장치 및 그 제조 방법
US5872421A (en) Surface electron display device with electron sink
US5764000A (en) Flat display screen including resistive strips
US5528098A (en) Redundant conductor electron source
KR850004344A (ko) 음극선관의 내장저항기
US5502347A (en) Electron source
CA1122734A (en) Vacuum fluorescent device with continuous strokes
US3048732A (en) Electroluminescent cell
US6815902B1 (en) Field emission flat screen with modulating electrode
GB1032768A (en) Improvements in or relating to electron discharge devices
US4063278A (en) Semiconductor switch having sensitive gate characteristics at high temperatures
US5767619A (en) Cold cathode field emission display and method for forming it
US5550426A (en) Field emission device
US6015324A (en) Fabrication process for surface electron display device with electron sink
US5698933A (en) Field emission device current control apparatus and method
RU2097869C1 (ru) Вакуумный микротриод
RU2077087C1 (ru) Катодолюминесцентная автоэмиссионная ячейка
JPH021335B2 (ko)
KR100195174B1 (ko) 전계방출표시소자용 음극 구조체
RU2066893C1 (ru) Автоэмиссионная ячейка

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee