DE3519389C2 - - Google Patents

Info

Publication number
DE3519389C2
DE3519389C2 DE3519389A DE3519389A DE3519389C2 DE 3519389 C2 DE3519389 C2 DE 3519389C2 DE 3519389 A DE3519389 A DE 3519389A DE 3519389 A DE3519389 A DE 3519389A DE 3519389 C2 DE3519389 C2 DE 3519389C2
Authority
DE
Germany
Prior art keywords
layer
zone
source
area
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3519389A
Other languages
German (de)
English (en)
Other versions
DE3519389A1 (de
Inventor
Akio Hiratsuka Kanagawa Jp Nakagawa
Hiromichi Yokohama Jp Ohashi
Yoshihiro Urawa Saitama Jp Yamaguchi
Kiminori Kawasaki Jp Watanabe
Thuneo Zushi Kanagawa Jp Thukakoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59110244A external-priority patent/JPS60254658A/ja
Priority claimed from JP59204427A external-priority patent/JP2585505B2/ja
Priority claimed from JP24481184A external-priority patent/JPS61123184A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to DE3546745A priority Critical patent/DE3546745C2/de
Publication of DE3519389A1 publication Critical patent/DE3519389A1/de
Application granted granted Critical
Publication of DE3519389C2 publication Critical patent/DE3519389C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19853519389 1984-05-30 1985-05-30 Mosfet mit veraenderlicher leitfaehigkeit Granted DE3519389A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE3546745A DE3546745C2 (de) 1984-05-30 1985-05-30 Lateraler MOS-Feldeffekttransistor mit Leitfähigkeitsmodulation

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59110244A JPS60254658A (ja) 1984-05-30 1984-05-30 導電変調型ｍｏｓｆｅｔ
JP59204427A JP2585505B2 (ja) 1984-09-29 1984-09-29 導電変調型ｍｏｓｆｅｔ
JP24481184A JPS61123184A (ja) 1984-11-20 1984-11-20 導電変調型ｍｏｓｆｅｔ

Publications (2)

Publication Number Publication Date
DE3519389A1 DE3519389A1 (de) 1985-12-19
DE3519389C2 true DE3519389C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-12-21

Family

ID=27311686

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853519389 Granted DE3519389A1 (de) 1984-05-30 1985-05-30 Mosfet mit veraenderlicher leitfaehigkeit

Country Status (3)

Country Link
US (8) US4672407A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3519389A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2161649B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4024728A1 (de) * 1989-08-03 1991-02-07 Fuji Electric Co Ltd Mos-halbleitereinrichtung und verfahren zu ihrer herstellung
DE4324481A1 (de) * 1992-07-21 1994-01-27 Mitsubishi Electric Corp Halbleitervorrichtung und Herstellungsverfahren
DE19654113A1 (de) * 1996-12-23 1998-06-25 Asea Brown Boveri Verfahren zum Herstellen eines MOS-gesteuerten Leistungshalbleiterbauelements
DE19823170A1 (de) * 1998-05-23 1999-11-25 Asea Brown Boveri Bipolartransistor mit isolierter Gateelektrode
DE19945639A1 (de) * 1999-09-23 2001-04-05 Abb Semiconductors Ag Bipolartransistor mit isolierter Gateelektrode (IGBT)
US6576936B1 (en) 1998-02-27 2003-06-10 Abb (Schweiz) Ag Bipolar transistor with an insulated gate electrode

Families Citing this family (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
US5286984A (en) * 1984-05-30 1994-02-15 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
GB2165090A (en) * 1984-09-26 1986-04-03 Philips Electronic Associated Improving the field distribution in high voltage semiconductor devices
US4809045A (en) * 1985-09-30 1989-02-28 General Electric Company Insulated gate device
US4641162A (en) * 1985-12-11 1987-02-03 General Electric Company Current limited insulated gate device
US4779123A (en) * 1985-12-13 1988-10-18 Siliconix Incorporated Insulated gate transistor array
DE3688057T2 (de) * 1986-01-10 1993-10-07 Gen Electric Halbleitervorrichtung und Methode zur Herstellung.
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
JPS62232167A (ja) * 1986-04-02 1987-10-12 Nissan Motor Co Ltd 半導体装置
GB2190539A (en) * 1986-05-16 1987-11-18 Philips Electronic Associated Semiconductor devices
US5338693A (en) * 1987-01-08 1994-08-16 International Rectifier Corporation Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET
US5237186A (en) * 1987-02-26 1993-08-17 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
US5144401A (en) * 1987-02-26 1992-09-01 Kabushiki Kaisha Toshiba Turn-on/off driving technique for insulated gate thyristor
US5105243A (en) * 1987-02-26 1992-04-14 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
US4775879A (en) * 1987-03-18 1988-10-04 Motorola Inc. FET structure arrangement having low on resistance
JP2722453B2 (ja) * 1987-06-08 1998-03-04 三菱電機株式会社 半導体装置
US4881107A (en) * 1987-07-03 1989-11-14 Nissan Motor Company, Ltd. IC device having a vertical MOSFET and an auxiliary component
US4857977A (en) * 1987-08-24 1989-08-15 General Electric Comapny Lateral metal-oxide-semiconductor controlled triacs
DE3856173D1 (de) * 1987-10-21 1998-06-10 Siemens Ag Verfahren zum Herstellen eines Bipolartransistors mit isolierter Gateelektrode
US4958211A (en) * 1988-09-01 1990-09-18 General Electric Company MCT providing turn-off control of arbitrarily large currents
EP0371785B1 (en) * 1988-11-29 1996-05-01 Kabushiki Kaisha Toshiba Lateral conductivity modulated MOSFET
JPH02163974A (ja) * 1988-12-16 1990-06-25 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタおよびその製造方法
US5049961A (en) * 1989-01-10 1991-09-17 Ixys Corporation Monolithic temperature sensing device
US5198688A (en) * 1989-03-06 1993-03-30 Fuji Electric Co., Ltd. Semiconductor device provided with a conductivity modulation MISFET
JPH02281662A (ja) * 1989-04-21 1990-11-19 Mitsubishi Electric Corp 半導体装置
JPH07105496B2 (ja) * 1989-04-28 1995-11-13 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタ
JPH02312280A (ja) * 1989-05-26 1990-12-27 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ
US5072267A (en) * 1989-06-28 1991-12-10 Nec Corporation Complementary field effect transistor
US5381025A (en) * 1989-08-17 1995-01-10 Ixys Corporation Insulated gate thyristor with gate turn on and turn off
US5273917A (en) * 1989-08-19 1993-12-28 Fuji Electric Co., Ltd. Method for manufacturing a conductivity modulation MOSFET
JPH0396282A (ja) * 1989-09-08 1991-04-22 Fuji Electric Co Ltd 絶縁ゲート型半導体装置
US5155562A (en) * 1990-02-14 1992-10-13 Fuji Electric Co., Ltd. Semiconductor device equipped with a conductivity modulation misfet
US5766966A (en) * 1996-02-09 1998-06-16 International Rectifier Corporation Power transistor device having ultra deep increased concentration region
IT1247293B (it) * 1990-05-09 1994-12-12 Int Rectifier Corp Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione
GB2245418A (en) * 1990-06-20 1992-01-02 Koninkl Philips Electronics Nv A semiconductor device and a method of manufacturing such a device
JP3190057B2 (ja) * 1990-07-02 2001-07-16 株式会社東芝 複合集積回路装置
US5382821A (en) * 1992-12-14 1995-01-17 Sumitomo Electric Industries, Ltd. High power field effect transistor
JP2751612B2 (ja) * 1990-10-01 1998-05-18 株式会社デンソー 縦型パワートランジスタ及びその製造方法
US5798550A (en) * 1990-10-01 1998-08-25 Nippondenso Co. Ltd. Vertical type semiconductor device and gate structure
DE69029942T2 (de) * 1990-10-16 1997-08-28 Cons Ric Microelettronica Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom
JPH04274368A (ja) * 1991-03-01 1992-09-30 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JP2862027B2 (ja) * 1991-03-12 1999-02-24 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ
JP2799252B2 (ja) * 1991-04-23 1998-09-17 三菱電機株式会社 Ｍｏｓ型半導体装置およびその製造方法
US5237481A (en) * 1991-05-29 1993-08-17 Ixys Corporation Temperature sensing device for use in a power transistor
EP0522712B1 (en) * 1991-06-10 1999-03-24 Kabushiki Kaisha Toshiba Thyristor with insulated gate
US5475243A (en) * 1991-07-02 1995-12-12 Fuji Electric Co., Ltd. Semiconductor device including an IGBT and a current-regenerative diode
US5321281A (en) * 1992-03-18 1994-06-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of fabricating same
US5585657A (en) * 1992-04-16 1996-12-17 Texas Instruments Incorporated Windowed and segmented linear geometry source cell for power DMOS processes
US5294816A (en) * 1992-06-10 1994-03-15 North Carolina State University At Raleigh Unit cell arrangement for emitter switched thyristor with base resistance control
US5198687A (en) * 1992-07-23 1993-03-30 Baliga Bantval J Base resistance controlled thyristor with single-polarity turn-on and turn-off control
JP3081739B2 (ja) * 1992-10-20 2000-08-28 三菱電機株式会社 絶縁ゲート型半導体装置及びその製造方法
US5293054A (en) * 1992-11-23 1994-03-08 North Carolina State University At Raleigh Emitter switched thyristor without parasitic thyristor latch-up susceptibility
US5241194A (en) * 1992-12-14 1993-08-31 North Carolina State University At Raleigh Base resistance controlled thyristor with integrated single-polarity gate control
US5306930A (en) * 1992-12-14 1994-04-26 North Carolina State University At Raleigh Emitter switched thyristor with buried dielectric layer
US5396087A (en) * 1992-12-14 1995-03-07 North Carolina State University Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up
US5489788A (en) * 1993-03-09 1996-02-06 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device with improved short-circuit tolerance
US5446295A (en) * 1993-08-23 1995-08-29 Siemens Components, Inc. Silicon controlled rectifier with a variable base-shunt resistant
US5396097A (en) * 1993-11-22 1995-03-07 Motorola Inc Transistor with common base region
JPH07235672A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
US5471075A (en) * 1994-05-26 1995-11-28 North Carolina State University Dual-channel emitter switched thyristor with trench gate
US5488236A (en) * 1994-05-26 1996-01-30 North Carolina State University Latch-up resistant bipolar transistor with trench IGFET and buried collector
JPH08227999A (ja) * 1994-12-21 1996-09-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法
DE69512021T2 (de) 1995-03-31 2000-05-04 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania DMOS-Anordnung-Struktur und Verfahren zur Herstellung
US5703383A (en) * 1995-04-11 1997-12-30 Kabushiki Kaisha Toshiba Power semiconductor device
US5541547A (en) * 1995-05-03 1996-07-30 Sun Microsystems, Inc. Test generator system for controllably inducing power pin latch-up and signal pin latch-up in a CMOS device
US6140678A (en) * 1995-06-02 2000-10-31 Siliconix Incorporated Trench-gated power MOSFET with protective diode
US5998837A (en) * 1995-06-02 1999-12-07 Siliconix Incorporated Trench-gated power MOSFET with protective diode having adjustable breakdown voltage
JP2988871B2 (ja) * 1995-06-02 1999-12-13 シリコニックス・インコーポレイテッド トレンチゲートパワーｍｏｓｆｅｔ
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
EP0772242B1 (en) * 1995-10-30 2006-04-05 STMicroelectronics S.r.l. Single feature size MOS technology power device
JP3209091B2 (ja) * 1996-05-30 2001-09-17 富士電機株式会社 絶縁ゲートバイポーラトランジスタを備えた半導体装置
US5831318A (en) * 1996-07-25 1998-11-03 International Rectifier Corporation Radhard mosfet with thick gate oxide and deep channel region
JP3918209B2 (ja) * 1996-09-11 2007-05-23 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ及びその製造方法
US5705437A (en) * 1996-09-25 1998-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Trench free process for SRAM
JP3692684B2 (ja) * 1997-02-17 2005-09-07 株式会社デンソー 絶縁ゲート型電界効果トランジスタ及びその製造方法
US6133607A (en) * 1997-05-22 2000-10-17 Kabushiki Kaisha Toshiba Semiconductor device
JP4140071B2 (ja) * 1997-11-04 2008-08-27 沖電気工業株式会社 半導体集積回路、半導体集積回路のレイアウト方法およびレイアウト装置
DE19750992A1 (de) * 1997-11-18 1999-06-02 Bosch Gmbh Robert Halbleiterbauelement
US6137140A (en) * 1997-11-26 2000-10-24 Texas Instruments Incorporated Integrated SCR-LDMOS power device
DE19808348C1 (de) * 1998-02-27 1999-06-24 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
JP2000012553A (ja) * 1998-06-26 2000-01-14 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2001024184A (ja) 1999-07-05 2001-01-26 Fuji Electric Co Ltd 絶縁ゲートトランジスタおよびその製造方法
JP4169879B2 (ja) 1999-08-20 2008-10-22 新電元工業株式会社 高耐圧トランジスタ
WO2001031709A1 (en) * 1999-10-22 2001-05-03 Semiconductor Components Industries, L.L.C. Semiconductor device with a single base region and method therefor
JP4357127B2 (ja) 2000-03-03 2009-11-04 株式会社東芝 半導体装置
JP4371521B2 (ja) * 2000-03-06 2009-11-25 株式会社東芝 電力用半導体素子およびその製造方法
JP4198302B2 (ja) * 2000-06-07 2008-12-17 三菱電機株式会社 半導体装置
CN100420031C (zh) * 2000-08-08 2008-09-17 美高森美公司 具有非对称沟道结构的功率mos器件
JP2002094063A (ja) 2000-09-11 2002-03-29 Toshiba Corp 半導体装置
GB2403598A (en) * 2000-10-31 2005-01-05 Fuji Electric Co Ltd Semiconductor device
GB2373634B (en) * 2000-10-31 2004-12-08 Fuji Electric Co Ltd Semiconductor device
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
JP5011611B2 (ja) 2001-06-12 2012-08-29 富士電機株式会社 半導体装置
JP3431909B2 (ja) * 2001-08-21 2003-07-28 沖電気工業株式会社 Ｌｄｍｏｓトランジスタの製造方法
JP2003282875A (ja) * 2002-03-27 2003-10-03 Toshiba Corp 半導体装置及び半導体装置の製造方法
US6852634B2 (en) * 2002-06-27 2005-02-08 Semiconductor Components Industries L.L.C. Low cost method of providing a semiconductor device having a high channel density
JP2004104003A (ja) * 2002-09-12 2004-04-02 Renesas Technology Corp 半導体素子
JP4477309B2 (ja) * 2003-05-09 2010-06-09 Ｎｅｃエレクトロニクス株式会社 高耐圧半導体装置及びその製造方法
EP1531497A1 (en) * 2003-11-17 2005-05-18 ABB Technology AG IGBT cathode design with improved safe operating area capability
JP4801323B2 (ja) * 2004-02-13 2011-10-26 富士通セミコンダクター株式会社 半導体装置の製造方法
US7081654B2 (en) * 2004-08-26 2006-07-25 Micrel, Inc. Method and system for a programmable electrostatic discharge (ESD) protection circuit
JP4944383B2 (ja) * 2005-03-25 2012-05-30 ルネサスエレクトロニクス株式会社 半導体装置
US7304472B2 (en) * 2005-04-28 2007-12-04 Williams Controls Industries, Inc. Rotary position sensor
RU2407107C2 (ru) * 2005-05-24 2010-12-20 Абб Швайц Аг Полупроводниковый прибор с изолированным затвором
EP1742249A1 (en) * 2005-07-08 2007-01-10 STMicroelectronics S.r.l. Power field effect transistor and manufacturing method thereof
JP2007207862A (ja) * 2006-01-31 2007-08-16 Mitsubishi Electric Corp 半導体装置
US7732862B2 (en) * 2006-03-20 2010-06-08 Semiconductor Components Industries, Llc Power semiconductor device having improved performance and method
JP5036234B2 (ja) * 2006-07-07 2012-09-26 三菱電機株式会社 半導体装置
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
JP5246638B2 (ja) * 2007-09-14 2013-07-24 三菱電機株式会社 半導体装置
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9431530B2 (en) 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
TWI424564B (zh) * 2011-01-13 2014-01-21 Anpec Electronics Corp Insulator gate with high operational response speed
CN102760662B (zh) * 2011-04-29 2014-12-31 茂达电子股份有限公司 半导体功率装置的制作方法
TWI441261B (zh) * 2011-05-13 2014-06-11 Anpec Electronics Corp 半導體功率元件的製作方法
CN102856192B (zh) * 2011-06-27 2015-05-13 中国科学院微电子研究所 Igbt器件及其制作方法
CN102856193B (zh) * 2011-06-27 2015-05-13 中国科学院微电子研究所 Igbt器件及其制作方法
JP5609939B2 (ja) * 2011-09-27 2014-10-22 株式会社デンソー 半導体装置
US8872222B2 (en) * 2012-02-24 2014-10-28 Macronix International Co., Ltd. Semiconductor structure and method for forming the same
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9722041B2 (en) 2012-09-19 2017-08-01 Vishay-Siliconix Breakdown voltage blocking device
US9214572B2 (en) * 2013-09-20 2015-12-15 Monolith Semiconductor Inc. High voltage MOSFET devices and methods of making the devices
US9991376B2 (en) 2013-09-20 2018-06-05 Monolith Semiconductor Inc. High voltage MOSFET devices and methods of making the devices
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
WO2016028943A1 (en) 2014-08-19 2016-02-25 Vishay-Siliconix Electronic circuit
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터
JP6206599B2 (ja) 2014-09-11 2017-10-04 富士電機株式会社 半導体装置および半導体装置の製造方法
US10249614B2 (en) * 2015-05-28 2019-04-02 Macronix International Co., Ltd. Semiconductor device
CN106684001A (zh) * 2016-12-14 2017-05-17 中国电子科技集团公司第四十七研究所 双阈值vdmos器件的制作方法
US11728422B2 (en) * 2019-11-14 2023-08-15 Stmicroelectronics S.R.L. Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof
CN215680697U (zh) 2020-06-23 2022-01-28 意法半导体股份有限公司 电子器件和半导体器件
IT202000015076A1 (it) 2020-06-23 2021-12-23 St Microelectronics Srl Dispositivo elettronico in 4h-sic con prestazioni di corto circuito migliorate, e relativo metodo di fabbricazione

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL174503C (nl) 1968-04-23 1984-06-18 Philips Nv Inrichting voor het overhevelen van lading.
US3921283A (en) * 1971-06-08 1975-11-25 Philips Corp Semiconductor device and method of manufacturing the device
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
JPS6034819B2 (ja) * 1978-02-14 1985-08-10 工業技術院長 記憶装置
DE2852621C4 (de) 1978-12-05 1995-11-30 Siemens Ag Isolierschicht-Feldeffekttransistor mit einer Drif tstrecke zwischen Gate-Elektrode und Drain-Zone
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
US4344081A (en) * 1980-04-14 1982-08-10 Supertex, Inc. Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
DE3024015A1 (de) * 1980-06-26 1982-01-07 Siemens AG, 1000 Berlin und 8000 München Steuerbarer halbleiterschalter
SE8107136L (sv) * 1980-12-02 1982-06-03 Gen Electric Styrelektrodforsedd likriktaranordning
DE3200634A1 (de) * 1981-02-02 1983-07-21 Siemens AG, 1000 Berlin und 8000 München Mis-feldeffekttransistor mit ladungstraegerinjektion
JPS57162359A (en) * 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
FR2507820A1 (fr) * 1981-06-16 1982-12-17 Thomson Csf Transistor bipolaire a commande par effet de champ au moyen d'une grille isolee
US4441247A (en) * 1981-06-29 1984-04-10 Intel Corporation Method of making MOS device by forming self-aligned polysilicon and tungsten composite gate
JPS5897866A (ja) * 1981-12-08 1983-06-10 Nippon Telegr & Teleph Corp <Ntt> 絶縁ゲ−ト型電界効果トランジスタ
US4532534A (en) * 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
GB2150753B (en) * 1983-11-30 1987-04-01 Toshiba Kk Semiconductor device
JPS60196974A (ja) * 1984-03-19 1985-10-05 Toshiba Corp 導電変調型ｍｏｓｆｅｔ
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
US4641162A (en) * 1985-12-11 1987-02-03 General Electric Company Current limited insulated gate device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4024728A1 (de) * 1989-08-03 1991-02-07 Fuji Electric Co Ltd Mos-halbleitereinrichtung und verfahren zu ihrer herstellung
DE4024728B4 (de) * 1989-08-03 2004-09-30 Fuji Electric Co., Ltd., Kawasaki MOS-Halbleitereinrichtung und Verfahren zu ihrer Herstellung
DE4324481A1 (de) * 1992-07-21 1994-01-27 Mitsubishi Electric Corp Halbleitervorrichtung und Herstellungsverfahren
DE4324481C2 (de) * 1992-07-21 2000-04-13 Mitsubishi Electric Corp Transistor-Halbleitervorrichtung und Herstellungsverfahren
DE19654113A1 (de) * 1996-12-23 1998-06-25 Asea Brown Boveri Verfahren zum Herstellen eines MOS-gesteuerten Leistungshalbleiterbauelements
US6576936B1 (en) 1998-02-27 2003-06-10 Abb (Schweiz) Ag Bipolar transistor with an insulated gate electrode
DE19823170A1 (de) * 1998-05-23 1999-11-25 Asea Brown Boveri Bipolartransistor mit isolierter Gateelektrode
DE19945639A1 (de) * 1999-09-23 2001-04-05 Abb Semiconductors Ag Bipolartransistor mit isolierter Gateelektrode (IGBT)

Also Published As

Publication number Publication date
US5780887A (en) 1998-07-14
GB2161649A (en) 1986-01-15
US4782372A (en) 1988-11-01
US4672407A (en) 1987-06-09
GB2161649B (en) 1988-10-19
DE3519389A1 (de) 1985-12-19
GB8513599D0 (en) 1985-07-03
US5086323A (en) 1992-02-04
US4881120A (en) 1989-11-14
US4928155A (en) 1990-05-22
US6025622A (en) 2000-02-15
US5093701A (en) 1992-03-03

Similar Documents

Publication Publication Date Title
DE3519389C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE4013643C2 (de) Bipolartransistor mit isolierter Steuerelektrode und Verfahren zu seiner Herstellung
DE19824514B4 (de) Diode
DE2853736C2 (de) Feldeffektanordnung
DE69025990T2 (de) Bipolarer Transistor mit isolierter Steuerelektrode und Verfahren zu dessen Herstellung
DE69332619T2 (de) Verfahren zur Herstellung von einem Feldeffektbauelement mit einem isolierten Gatter
DE2611338C3 (de) Feldeffekttransistor mit sehr kurzer Kanallange
DE2711562C3 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
DE69305284T2 (de) Halbleiterbauelement mit vertikalem Feldeffektbauelement mit isoliertem Gate und Verfahren zur Herstellung eines solchen Bauelementes
DE3937502C2 (de) Isoliereinrichtung für eine integrierte Schaltung und Verfahren zu deren Herstellung
DE69305909T2 (de) Leistungsanordnung mit isoliertem Gate-Kontakt-Gebiet
DE2439875C2 (de) Halbleiterbauelement mit negativer Widerstandscharakteristik
DE19811297A1 (de) MOS-Halbleitervorrichtung mit hoher Durchbruchspannung
DE69331312T2 (de) Leistungshalbleiteranordnung mit Schutzmittel
DE2559360A1 (de) Halbleiterbauteil mit integrierten schaltkreisen
DE19954352A1 (de) Halbleiterbauelement sowie Verfahren zur Herstellung desselben
DE2947311C2 (de) Integrierte Halbleiterschaltung
DE4219319A1 (de) Mos-fet und herstellungsverfahren dafuer
DE19701189A1 (de) Halbleiterbauteil
DE19914697A1 (de) Verarmungs-MOS-Halbleiterbauelement und MOS-Leistungs-IC
DE3806164A1 (de) Halbleiterbauelement mit hoher durchbruchspannung
DE2832154C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP0623960A1 (de) IGBT mit selbstjustierender Kathodenstruktur sowie Verfahren zu dessen Herstellung
DE1614300B2 (de) Feldeffekttransistor mit isolierter Steuerelektrode
EP0341453B1 (de) MOS-Halbleiterbauelement für hohe Sperrspannung

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8172 Supplementary division/partition in:

Ref country code: DE

Ref document number: 3546745

Format of ref document f/p: P

Q171 Divided out to:

Ref country code: DE

Ref document number: 3546745

AH Division in

Ref country code: DE

Ref document number: 3546745

Format of ref document f/p: P

D2 Grant after examination
8364 No opposition during term of opposition
AH Division in

Ref country code: DE

Ref document number: 3546745

Format of ref document f/p: P

8320 Willingness to grant licences declared (paragraph 23)