DE102010037434B8 - Verfahren zur Herstellung einer nicht-flüchtigen Speichervorrichtung vom vertikalen Typ - Google Patents

Verfahren zur Herstellung einer nicht-flüchtigen Speichervorrichtung vom vertikalen Typ Download PDF

Info

Publication number
DE102010037434B8
DE102010037434B8 DE102010037434.2A DE102010037434A DE102010037434B8 DE 102010037434 B8 DE102010037434 B8 DE 102010037434B8 DE 102010037434 A DE102010037434 A DE 102010037434A DE 102010037434 B8 DE102010037434 B8 DE 102010037434B8
Authority
DE
Germany
Prior art keywords
manufacturing
memory device
volatile memory
vertical type
type non
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102010037434.2A
Other languages
English (en)
Other versions
DE102010037434B4 (de
DE102010037434A1 (de
Inventor
Young-Hoo Kim
Hyo-san Lee
Sang-Won Bae
Bo-Un Yoon
Kun-tack Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE102010037434A1 publication Critical patent/DE102010037434A1/de
Application granted granted Critical
Publication of DE102010037434B4 publication Critical patent/DE102010037434B4/de
Publication of DE102010037434B8 publication Critical patent/DE102010037434B8/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
DE102010037434.2A 2009-09-29 2010-09-09 Verfahren zur Herstellung einer nicht-flüchtigen Speichervorrichtung vom vertikalen Typ Active DE102010037434B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090092258A KR101603731B1 (ko) 2009-09-29 2009-09-29 버티칼 낸드 전하 트랩 플래시 메모리 디바이스 및 제조방법
KR10-2009-0092258 2009-09-29

Publications (3)

Publication Number Publication Date
DE102010037434A1 DE102010037434A1 (de) 2011-03-31
DE102010037434B4 DE102010037434B4 (de) 2020-03-05
DE102010037434B8 true DE102010037434B8 (de) 2020-04-30

Family

ID=43662716

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102010037434.2A Active DE102010037434B8 (de) 2009-09-29 2010-09-09 Verfahren zur Herstellung einer nicht-flüchtigen Speichervorrichtung vom vertikalen Typ

Country Status (6)

Country Link
US (1) US8344385B2 (de)
JP (1) JP5647840B2 (de)
KR (1) KR101603731B1 (de)
CN (1) CN102034829B (de)
DE (1) DE102010037434B8 (de)
TW (1) TWI501384B (de)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8535993B2 (en) 2010-09-17 2013-09-17 Infineon Technologies Ag Semiconductor device and method using a sacrificial layer
US8378412B2 (en) 2010-10-13 2013-02-19 Micron Technology, Inc. Memory arrays where a distance between adjacent memory cells at one end of a substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion and formation thereof
KR101137928B1 (ko) * 2010-10-22 2012-05-09 에스케이하이닉스 주식회사 비휘발성 메모리 장치 제조 방법
KR20120043475A (ko) * 2010-10-26 2012-05-04 에스케이하이닉스 주식회사 3차원 구조의 비휘발성 메모리 장치의 제조 방법
KR101149619B1 (ko) * 2010-11-19 2012-05-25 에스케이하이닉스 주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조 방법
KR101825534B1 (ko) 2011-02-07 2018-02-06 삼성전자주식회사 3차원 반도체 장치
US9136128B2 (en) 2011-08-31 2015-09-15 Micron Technology, Inc. Methods and apparatuses including memory cells with air gaps and other low dielectric constant materials
KR101835114B1 (ko) * 2011-09-07 2018-03-06 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
KR20130037063A (ko) * 2011-10-05 2013-04-15 에스케이하이닉스 주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조 방법
KR20130044711A (ko) * 2011-10-24 2013-05-03 에스케이하이닉스 주식회사 3차원 불휘발성 메모리 소자와, 이를 포함하는 메모리 시스템과, 그 제조방법
KR102031182B1 (ko) * 2011-11-29 2019-10-14 삼성전자주식회사 반도체 메모리 소자 및 그 제조방법
US8637914B2 (en) * 2011-12-13 2014-01-28 Micron Technology, Inc. Memory cells having a plurality of control gates and memory cells having a control gate and a shield
KR101891959B1 (ko) * 2012-03-05 2018-08-28 삼성전자 주식회사 비휘발성 메모리 장치 및 그 제조 방법
KR101949375B1 (ko) * 2012-03-08 2019-04-25 에스케이하이닉스 주식회사 비휘발성 메모리 장치의 제조 방법
KR20130117130A (ko) * 2012-04-17 2013-10-25 삼성전자주식회사 비휘발성 메모리 소자의 게이트 구조물
KR20130127791A (ko) * 2012-05-15 2013-11-25 에스케이하이닉스 주식회사 비휘발성 메모리 장치의 제조 방법
KR20130139602A (ko) 2012-06-13 2013-12-23 에스케이하이닉스 주식회사 반도체 소자와, 이를 포함하는 메모리 시스템과, 그 제조방법
US9343469B2 (en) 2012-06-27 2016-05-17 Intel Corporation Three dimensional NAND flash with self-aligned select gate
KR20140011872A (ko) 2012-07-20 2014-01-29 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
KR102003526B1 (ko) 2012-07-31 2019-07-25 삼성전자주식회사 반도체 메모리 소자 및 그 제조방법
US8987805B2 (en) 2012-08-27 2015-03-24 Samsung Electronics Co., Ltd. Vertical type semiconductor devices including oxidation target layers
KR102091713B1 (ko) 2012-09-27 2020-03-20 삼성전자 주식회사 비휘발성 메모리 장치 및 그 제조 방법
US9076824B2 (en) 2012-11-02 2015-07-07 Micron Technology, Inc. Memory arrays with a memory cell adjacent to a smaller size of a pillar having a greater channel length than a memory cell adjacent to a larger size of the pillar and methods
US10651315B2 (en) 2012-12-17 2020-05-12 Micron Technology, Inc. Three dimensional memory
KR102007274B1 (ko) 2013-01-15 2019-08-05 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
US9129859B2 (en) 2013-03-06 2015-09-08 Intel Corporation Three dimensional memory structure
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
KR102098588B1 (ko) 2013-06-28 2020-04-08 삼성전자주식회사 반도체 소자 및 그의 제조 방법
KR20150026209A (ko) * 2013-09-02 2015-03-11 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
KR102154784B1 (ko) * 2013-10-10 2020-09-11 삼성전자주식회사 반도체 장치 및 그 제조방법
US9437604B2 (en) * 2013-11-01 2016-09-06 Micron Technology, Inc. Methods and apparatuses having strings of memory cells including a metal source
US9431410B2 (en) 2013-11-01 2016-08-30 Micron Technology, Inc. Methods and apparatuses having memory cells including a monolithic semiconductor channel
KR102039708B1 (ko) 2013-11-13 2019-11-01 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
CN103594475B (zh) * 2013-11-18 2016-08-24 唐棕 半导体器件及其制造方法
KR102161814B1 (ko) 2013-11-19 2020-10-06 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
KR102195112B1 (ko) 2013-11-19 2020-12-24 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
EP2887396B1 (de) 2013-12-20 2017-03-08 Imec Dreidimensionales, resistives Speicher-Array
KR102128465B1 (ko) 2014-01-03 2020-07-09 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
US9698156B2 (en) * 2015-03-03 2017-07-04 Macronix International Co., Ltd. Vertical thin-channel memory
US11018149B2 (en) 2014-03-27 2021-05-25 Intel Corporation Building stacked hollow channels for a three dimensional circuit device
US9847340B2 (en) 2014-03-27 2017-12-19 Intel Corporation Methods of tunnel oxide layer formation in 3D NAND memory structures and associated devices
US9559113B2 (en) * 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9240416B2 (en) 2014-06-12 2016-01-19 Kabushiki Kaisha Toshiba Semiconductor memory device
KR102258369B1 (ko) * 2014-06-23 2021-05-31 삼성전자주식회사 수직형 메모리 장치 및 이의 제조 방법
KR101603971B1 (ko) * 2014-07-30 2016-03-17 피에스케이 주식회사 기판 처리 장치 및 기판 처리 방법
TWI550764B (zh) * 2014-08-08 2016-09-21 旺宏電子股份有限公司 半導體結構及其製造方法
KR102239602B1 (ko) 2014-08-12 2021-04-14 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102240769B1 (ko) * 2014-08-14 2021-04-16 삼성전자주식회사 자기 메모리 장치 및 그의 형성방법
WO2016046602A1 (zh) 2014-09-26 2016-03-31 三星电子株式会社 半导体存储器件及其制造方法
US9263459B1 (en) 2014-09-26 2016-02-16 Intel Corporation Capping poly channel pillars in stacked circuits
EP3029736A1 (de) * 2014-12-05 2016-06-08 IMEC vzw Vertikale, dreidimensionale Halbleiteranordnung
US10354860B2 (en) 2015-01-29 2019-07-16 Versum Materials Us, Llc Method and precursors for manufacturing 3D devices
US9478561B2 (en) 2015-01-30 2016-10-25 Samsung Electronics Co., Ltd. Semiconductor memory device and method of fabricating the same
CN105990281B (zh) * 2015-02-27 2018-06-22 旺宏电子股份有限公司 半导体结构及其制造方法
US9466610B1 (en) * 2015-03-24 2016-10-11 Macronix International Co., Ltd. Method of fabricating three-dimensional gate-all-around vertical gate structures and semiconductor devices, and three-dimensional gate-all-round vertical gate structures and semiconductor devices thereof
CN104779154B (zh) * 2015-04-10 2017-11-14 武汉新芯集成电路制造有限公司 3d闪存沟道的制造方法
TWI550852B (zh) * 2015-04-28 2016-09-21 旺宏電子股份有限公司 半導體結構及其製造方法
KR102447489B1 (ko) * 2015-09-02 2022-09-27 삼성전자주식회사 반도체 메모리 소자
US9620512B1 (en) * 2015-10-28 2017-04-11 Sandisk Technologies Llc Field effect transistor with a multilevel gate electrode for integration with a multilevel memory device
US9754888B2 (en) 2015-12-14 2017-09-05 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing the same
US9917099B2 (en) 2016-03-09 2018-03-13 Toshiba Memory Corporation Semiconductor device having vertical channel between stacked electrode layers and insulating layers
US9818754B2 (en) 2016-03-15 2017-11-14 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing same
US10446571B2 (en) * 2016-06-01 2019-10-15 Micron Technology, Inc. Memory circuitry comprising a vertical string of memory cells and a conductive via and method used in forming a vertical string of memory cells and a conductive via
KR102636463B1 (ko) 2016-10-05 2024-02-14 삼성전자주식회사 반도체 메모리 장치
CN107919435B (zh) * 2016-10-09 2020-06-09 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
US10361218B2 (en) * 2017-02-28 2019-07-23 Toshiba Memory Corporation Semiconductor device and method for manufacturing same
JP6800057B2 (ja) * 2017-03-15 2020-12-16 キオクシア株式会社 記憶装置
KR101970316B1 (ko) * 2017-07-20 2019-04-18 고려대학교 산학협력단 삼차원 낸드 플래시 메모리 및 그 제조방법
US10680006B2 (en) * 2017-08-11 2020-06-09 Micron Technology, Inc. Charge trap structure with barrier to blocking region
US10446572B2 (en) 2017-08-11 2019-10-15 Micron Technology, Inc. Void formation for charge trap structures
US10164009B1 (en) 2017-08-11 2018-12-25 Micron Technology, Inc. Memory device including voids between control gates
US10453855B2 (en) 2017-08-11 2019-10-22 Micron Technology, Inc. Void formation in charge trap structures
CN107731828B (zh) * 2017-08-21 2019-01-01 长江存储科技有限责任公司 Nand存储器及其制备方法
JP7304335B2 (ja) 2017-08-21 2023-07-06 長江存儲科技有限責任公司 Ｎａｎｄメモリデバイスおよびｎａｎｄメモリデバイスを形成するための方法
JP2019041054A (ja) 2017-08-28 2019-03-14 東芝メモリ株式会社 半導体装置
JP6842386B2 (ja) 2017-08-31 2021-03-17 キオクシア株式会社 半導体装置
JP2019050271A (ja) 2017-09-08 2019-03-28 東芝メモリ株式会社 記憶装置
JP2019054162A (ja) 2017-09-15 2019-04-04 東芝メモリ株式会社 記憶装置の製造方法および記憶装置
KR102549967B1 (ko) * 2017-11-21 2023-06-30 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
US10147732B1 (en) 2017-11-30 2018-12-04 Yangtze Memory Technologies Co., Ltd. Source structure of three-dimensional memory device and method for forming the same
CN107887395B (zh) 2017-11-30 2018-12-14 长江存储科技有限责任公司 Nand存储器及其制备方法
JP2019114698A (ja) 2017-12-25 2019-07-11 東芝メモリ株式会社 半導体記憶装置及びその製造方法
JP2019160871A (ja) 2018-03-08 2019-09-19 東芝メモリ株式会社 半導体装置の製造方法および半導体記憶装置
JP2019161012A (ja) 2018-03-13 2019-09-19 東芝メモリ株式会社 記憶装置
JP2019161110A (ja) 2018-03-15 2019-09-19 東芝メモリ株式会社 記憶装置
JP7123585B2 (ja) 2018-03-15 2022-08-23 キオクシア株式会社 半導体記憶装置
CN111627916B (zh) 2018-04-18 2021-03-30 长江存储科技有限责任公司 用于形成三维存储器设备的沟道插塞的方法
JP7198595B2 (ja) 2018-05-31 2023-01-04 東京エレクトロン株式会社 基板液処理方法、基板液処理装置及び記憶媒体
US10720444B2 (en) 2018-08-20 2020-07-21 Sandisk Technologies Llc Three-dimensional flat memory device including a dual dipole blocking dielectric layer and methods of making the same
US10937798B2 (en) 2018-11-02 2021-03-02 Micron Technology, Inc. Memory array and a method used in forming a memory array
US10748922B2 (en) 2018-11-28 2020-08-18 Micron Technology, Inc. Memory arrays and methods used in forming a memory array
KR20200073702A (ko) 2018-12-14 2020-06-24 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
KR20200073429A (ko) 2018-12-14 2020-06-24 삼성전자주식회사 반도체 소자
CN109887922B (zh) * 2019-03-15 2022-03-22 长江存储科技有限责任公司 三维存储器及其制造方法
TWI701811B (zh) * 2019-05-15 2020-08-11 力晶積成電子製造股份有限公司 非揮發性記憶體結構
KR20210058168A (ko) 2019-11-13 2021-05-24 에스케이하이닉스 주식회사 반도체 메모리 장치
US11521972B2 (en) * 2020-05-01 2022-12-06 Tokyo Electron Limited High performance multi-dimensional device and logic integration
WO2021246664A1 (ko) * 2020-06-05 2021-12-09 한양대학교 산학협력단 누설 전류를 개선하는 3차원 플래시 메모리
KR20210158174A (ko) 2020-06-23 2021-12-30 삼성전자주식회사 반도체 소자
CN113519055B (zh) * 2021-06-07 2023-07-21 长江存储科技有限责任公司 三维存储装置及其形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080173928A1 (en) * 2006-12-21 2008-07-24 Fumitaka Arai Nonvolatile semiconductor memory and process of producing the same
US20090121271A1 (en) * 2007-11-08 2009-05-14 Samsung Electronics Co., Ltd. Vertical-type non-volatile memory devices

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3651689B2 (ja) * 1993-05-28 2005-05-25 株式会社東芝 Ｎａｎｄ型不揮発性半導体記憶装置及びその製造方法
KR100674952B1 (ko) * 2005-02-05 2007-01-26 삼성전자주식회사 3차원 플래쉬 메모리 소자 및 그 제조방법
JP4822841B2 (ja) * 2005-12-28 2011-11-24 株式会社東芝 半導体記憶装置及びその製造方法
JP2007317874A (ja) * 2006-05-25 2007-12-06 Toshiba Corp 不揮発性半導体記憶装置
KR20080017244A (ko) 2006-08-21 2008-02-26 가부시키가이샤 고베 세이코쇼 고장력 후강판 및 그 제조 방법
JP4445514B2 (ja) * 2007-04-11 2010-04-07 株式会社東芝 半導体記憶装置
KR101559868B1 (ko) * 2008-02-29 2015-10-14 삼성전자주식회사 수직형 반도체 소자 및 이의 제조 방법.
JP2009224468A (ja) * 2008-03-14 2009-10-01 Toshiba Corp 不揮発性半導体記憶装置
KR101481104B1 (ko) * 2009-01-19 2015-01-13 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
KR101652829B1 (ko) * 2010-06-03 2016-09-01 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
KR20110132865A (ko) * 2010-06-03 2011-12-09 삼성전자주식회사 3차원 반도체 메모리 장치 및 그 제조 방법
KR101660432B1 (ko) * 2010-06-07 2016-09-27 삼성전자 주식회사 수직 구조의 반도체 메모리 소자
KR20110136273A (ko) * 2010-06-14 2011-12-21 삼성전자주식회사 수직형 반도체 소자의 제조 방법
KR101692389B1 (ko) * 2010-06-15 2017-01-04 삼성전자주식회사 수직형 반도체 소자 및 그 제조 방법
KR20120006843A (ko) * 2010-07-13 2012-01-19 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR101699515B1 (ko) * 2010-09-01 2017-02-14 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
KR101763420B1 (ko) * 2010-09-16 2017-08-01 삼성전자주식회사 3차원 반도체 기억 소자 및 그 제조 방법
US20120086072A1 (en) * 2010-10-11 2012-04-12 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory device and related method of manufacture
KR101755635B1 (ko) * 2010-10-14 2017-07-10 삼성전자주식회사 반도체 소자 및 그 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080173928A1 (en) * 2006-12-21 2008-07-24 Fumitaka Arai Nonvolatile semiconductor memory and process of producing the same
US20090121271A1 (en) * 2007-11-08 2009-05-14 Samsung Electronics Co., Ltd. Vertical-type non-volatile memory devices

Also Published As

Publication number Publication date
KR101603731B1 (ko) 2016-03-16
JP5647840B2 (ja) 2015-01-07
US8344385B2 (en) 2013-01-01
DE102010037434B4 (de) 2020-03-05
US20110073866A1 (en) 2011-03-31
KR20110034816A (ko) 2011-04-06
TW201138070A (en) 2011-11-01
JP2011077521A (ja) 2011-04-14
DE102010037434A1 (de) 2011-03-31
TWI501384B (zh) 2015-09-21
CN102034829B (zh) 2015-11-25
CN102034829A (zh) 2011-04-27

Similar Documents

Publication Publication Date Title
DE102010037434B8 (de) Verfahren zur Herstellung einer nicht-flüchtigen Speichervorrichtung vom vertikalen Typ
DE102011055714B8 (de) Verfahren zum Programmieren einer nicht-flüchtigen Speichervorrichtung
DE112012005357A5 (de) Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
DE102009044474A8 (de) Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DK2254624T3 (da) Automatisk injektor
DE112007000599A5 (de) Verfahren zur Kalibrierung einer Gierratenmessung
DE102011010118A8 (de) Keramisches Konversionselement, Halbleiterchip mit einem keramischen Konversionselement und Verfahren zur Herstellung eines keramischen Konversionselements
ATE526429T1 (de) Verfahren zur herstellung einer beschichtung
ATE542808T1 (de) Verfahren zur herstellung von epichlorydrin aus glyzerin
IT1394087B1 (it) Tenda a falde
DE112012001140A5 (de) Verfahren zur Herstellung eines thermoelektrischen Moduls
DE102011004476A8 (de) Halbleitereinrichtung und Verfahren zur Herstellung einer Halbleitereinrichtung
DE102010063806B8 (de) Herstellungsverfahren für eine Halbleitervorrichtung
DK2379501T3 (da) Fremgangsmåde til fremstilling af aktiverede estere
IT1395202B1 (it) Tenda a falde
DE112012001787A5 (de) Verfahren zur Herstellung einer Solarzelle
BRPI1016097A2 (pt) método para a fabricação de acetato de vinila
DE112011100742A5 (de) Verfahren zur herstellung einer verpackung
DE112012003613A5 (de) Verfahren zur Herstellung einer Leuchtdiode und Leuchtdiode
DE112010003565A5 (de) Verfahren zum ernten von algen aus einer algensuspension
BRPI1007219A8 (pt) elemento oco
DE112010001091A5 (de) Aus einem einstückigen stahlbauprofil bestehender träger
BRPI0921142A2 (pt) método para limpeza de tanques
BR112012004112A2 (pt) elemento modelado e método para a produção de um elemento modelado
DE502007006500D1 (de) Verfahren zur herstellung einer halbleiterstruktur

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0027115000

Ipc: H01L0027115780

R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0027115780

Ipc: H10B0043200000