DE102010063806B8 - Herstellungsverfahren für eine Halbleitervorrichtung - Google Patents

Herstellungsverfahren für eine Halbleitervorrichtung Download PDF

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Publication number
DE102010063806B8
DE102010063806B8 DE102010063806.4A DE102010063806A DE102010063806B8 DE 102010063806 B8 DE102010063806 B8 DE 102010063806B8 DE 102010063806 A DE102010063806 A DE 102010063806A DE 102010063806 B8 DE102010063806 B8 DE 102010063806B8
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DE
Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102010063806.4A
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English (en)
Other versions
DE102010063806A1 (de
DE102010063806B4 (de
Inventor
Masaki Konishi
Hirokazu Fujiwara
Takeshi Endo
Takeo Yamamoto
Yukihiko Watanabe
Takeshi Katsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
Original Assignee
Denso Corp
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp, Toyota Motor Corp filed Critical Denso Corp
Publication of DE102010063806A1 publication Critical patent/DE102010063806A1/de
Publication of DE102010063806B4 publication Critical patent/DE102010063806B4/de
Application granted granted Critical
Publication of DE102010063806B8 publication Critical patent/DE102010063806B8/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
DE102010063806.4A 2009-12-22 2010-12-21 Herstellungsverfahren für eine Halbleitervorrichtung Active DE102010063806B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009291420A JP5567830B2 (ja) 2009-12-22 2009-12-22 半導体装置の製造方法
JP2009-291420 2009-12-22

Publications (3)

Publication Number Publication Date
DE102010063806A1 DE102010063806A1 (de) 2011-06-30
DE102010063806B4 DE102010063806B4 (de) 2015-03-26
DE102010063806B8 true DE102010063806B8 (de) 2015-06-03

Family

ID=44151700

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102010063806.4A Active DE102010063806B8 (de) 2009-12-22 2010-12-21 Herstellungsverfahren für eine Halbleitervorrichtung

Country Status (3)

Country Link
US (1) US8163637B2 (de)
JP (1) JP5567830B2 (de)
DE (1) DE102010063806B8 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013021219A (ja) * 2011-07-13 2013-01-31 Shindengen Electric Mfg Co Ltd 半導体装置およびその製造方法
CN102709185A (zh) * 2011-07-25 2012-10-03 京东方科技集团股份有限公司 含有多晶硅有源层的薄膜晶体管、其制造方法及阵列基板
JP5845714B2 (ja) * 2011-08-19 2016-01-20 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2013110331A (ja) * 2011-11-24 2013-06-06 Sumitomo Electric Ind Ltd 半導体装置の製造方法
JP6053103B2 (ja) * 2012-04-12 2016-12-27 富士電機株式会社 ワイドバンドギャップ半導体装置およびその製造方法
JP6206862B2 (ja) * 2012-05-31 2017-10-04 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2015032627A (ja) * 2013-07-31 2015-02-16 株式会社東芝 半導体装置
DE102015120848B4 (de) * 2015-12-01 2017-10-26 Infineon Technologies Ag Herstellen einer Kontaktschicht auf einem Halbleiterkörper
JP6472776B2 (ja) * 2016-02-01 2019-02-20 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005229105A (ja) * 2004-01-13 2005-08-25 Matsushita Electric Ind Co Ltd 半導体素子およびその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953614A (en) * 1997-10-09 1999-09-14 Lsi Logic Corporation Process for forming self-aligned metal silicide contacts for MOS structure using single silicide-forming step
JP2000008190A (ja) 1998-06-25 2000-01-11 Tokin Corp 電気メッキ基板
US6642577B2 (en) * 2000-03-16 2003-11-04 Denso Corporation Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same
JP2002016013A (ja) 2000-06-27 2002-01-18 Nissan Motor Co Ltd 炭化珪素半導体装置の製造方法
JP4463482B2 (ja) * 2002-07-11 2010-05-19 パナソニック株式会社 Ｍｉｓｆｅｔ及びその製造方法
JP2005311166A (ja) * 2004-04-23 2005-11-04 Toshiba Corp 半導体記憶装置およびその製造方法
JP2005354024A (ja) * 2004-05-11 2005-12-22 Seiko Epson Corp 半導体基板の製造方法および半導体装置の製造方法
JP2007042803A (ja) * 2005-08-02 2007-02-15 Honda Motor Co Ltd イオン注入マスクおよびその製造方法、並びにイオン注入マスクを用いた炭化珪素半導体装置およびその製造方法
JP4935160B2 (ja) * 2006-04-11 2012-05-23 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP4333782B2 (ja) * 2007-07-05 2009-09-16 株式会社デンソー ジャンクションバリアショットキーダイオードを備えた炭化珪素半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005229105A (ja) * 2004-01-13 2005-08-25 Matsushita Electric Ind Co Ltd 半導体素子およびその製造方法

Also Published As

Publication number Publication date
JP5567830B2 (ja) 2014-08-06
DE102010063806A1 (de) 2011-06-30
DE102010063806B4 (de) 2015-03-26
JP2011134809A (ja) 2011-07-07
US8163637B2 (en) 2012-04-24
US20110151654A1 (en) 2011-06-23

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