DE102009052393B8 - Halbleiterherstellungsverfahren - Google Patents
Halbleiterherstellungsverfahren Download PDFInfo
- Publication number
- DE102009052393B8 DE102009052393B8 DE102009052393.6A DE102009052393A DE102009052393B8 DE 102009052393 B8 DE102009052393 B8 DE 102009052393B8 DE 102009052393 A DE102009052393 A DE 102009052393A DE 102009052393 B8 DE102009052393 B8 DE 102009052393B8
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor manufacturing
- manufacturing processes
- processes
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/347,721 | 2008-12-31 | ||
US12/347,721 US8236691B2 (en) | 2008-12-31 | 2008-12-31 | Method of high aspect ratio plug fill |
Publications (3)
Publication Number | Publication Date |
---|---|
DE102009052393A1 DE102009052393A1 (de) | 2010-07-01 |
DE102009052393B4 DE102009052393B4 (de) | 2017-11-16 |
DE102009052393B8 true DE102009052393B8 (de) | 2018-02-08 |
Family
ID=42221054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102009052393.6A Active DE102009052393B8 (de) | 2008-12-31 | 2009-11-09 | Halbleiterherstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US8236691B2 (de) |
JP (1) | JP2010157700A (de) |
CN (1) | CN101770978B (de) |
DE (1) | DE102009052393B8 (de) |
TW (1) | TWI415218B (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
CN113862634A (zh) * | 2012-03-27 | 2021-12-31 | 诺发系统公司 | 钨特征填充 |
US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
CN104157562A (zh) * | 2014-08-26 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | 半导体结构的形成方法 |
US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
US9640482B1 (en) * | 2016-04-13 | 2017-05-02 | United Microelectronics Corp. | Semiconductor device with a contact plug and method of fabricating the same |
KR102441431B1 (ko) * | 2016-06-06 | 2022-09-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 표면을 갖는 기판을 프로세싱 챔버에 포지셔닝하는 단계를 포함하는 프로세싱 방법 |
US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
SG11202001268TA (en) | 2017-08-14 | 2020-03-30 | Lam Res Corp | Metal fill process for three-dimensional vertical nand wordline |
CN112262457A (zh) | 2018-05-03 | 2021-01-22 | 朗姆研究公司 | 在3d nand结构中沉积钨和其他金属的方法 |
CN113166929A (zh) | 2018-12-05 | 2021-07-23 | 朗姆研究公司 | 无空隙低应力填充 |
US11972952B2 (en) | 2018-12-14 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition on 3D NAND structures |
JP2022522226A (ja) | 2019-04-11 | 2022-04-14 | ラム リサーチ コーポレーション | 高ステップカバレッジのタングステン堆積 |
JP2022544931A (ja) | 2019-08-12 | 2022-10-24 | ラム リサーチ コーポレーション | タングステン堆積 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5834846A (en) * | 1995-01-10 | 1998-11-10 | Kawasaki Steel Corporation | Semiconductor device with contact structure and method of manufacturing the same |
US6180513B1 (en) * | 1996-08-13 | 2001-01-30 | Kabushiki Kaisha Toshiba | Apparatus and method for manufacturing a semiconductor device having a multi-wiring layer structure |
US6406998B1 (en) * | 1996-02-05 | 2002-06-18 | Micron Technology, Inc. | Formation of silicided contact by ion implantation |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2061119C (en) * | 1991-04-19 | 1998-02-03 | Pei-Ing P. Lee | Method of depositing conductors in high aspect ratio apertures |
JP3149887B2 (ja) * | 1991-11-08 | 2001-03-26 | 新日本製鐵株式会社 | スパッタ成膜方法及びスパッタ成膜装置 |
JPH08213610A (ja) * | 1995-02-07 | 1996-08-20 | Sony Corp | 電界効果型半導体装置及びその製造方法 |
US5757879A (en) * | 1995-06-07 | 1998-05-26 | International Business Machines Corporation | Tungsten absorber for x-ray mask |
US5918141A (en) * | 1997-06-20 | 1999-06-29 | National Semiconductor Corporation | Method of masking silicide deposition utilizing a photoresist mask |
US6696746B1 (en) * | 1998-04-29 | 2004-02-24 | Micron Technology, Inc. | Buried conductors |
KR100319681B1 (ko) * | 1998-12-02 | 2002-01-09 | 가네꼬 히사시 | 전계 효과 트랜지스터 및 그 제조 방법 |
US6686278B2 (en) * | 2001-06-19 | 2004-02-03 | United Microelectronics Corp. | Method for forming a plug metal layer |
TWI270180B (en) * | 2004-06-21 | 2007-01-01 | Powerchip Semiconductor Corp | Flash memory cell and manufacturing method thereof |
ITMI20070446A1 (it) * | 2007-03-06 | 2008-09-07 | St Microelectronics Srl | Processo perfabbricare circuiti integrati formati su un substrato seminconduttore e comprendenti strati di tungsteno |
US8372744B2 (en) * | 2007-04-20 | 2013-02-12 | International Business Machines Corporation | Fabricating a contact rhodium structure by electroplating and electroplating composition |
KR20090074561A (ko) * | 2008-01-02 | 2009-07-07 | 주식회사 하이닉스반도체 | 반도체소자의 컨택 형성방법 |
US20100065949A1 (en) * | 2008-09-17 | 2010-03-18 | Andreas Thies | Stacked Semiconductor Chips with Through Substrate Vias |
-
2008
- 2008-12-31 US US12/347,721 patent/US8236691B2/en active Active
-
2009
- 2009-11-05 JP JP2009269279A patent/JP2010157700A/ja active Pending
- 2009-11-09 DE DE102009052393.6A patent/DE102009052393B8/de active Active
- 2009-11-13 CN CN200910222342.7A patent/CN101770978B/zh active Active
- 2009-11-26 TW TW098140387A patent/TWI415218B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5834846A (en) * | 1995-01-10 | 1998-11-10 | Kawasaki Steel Corporation | Semiconductor device with contact structure and method of manufacturing the same |
US6406998B1 (en) * | 1996-02-05 | 2002-06-18 | Micron Technology, Inc. | Formation of silicided contact by ion implantation |
US6180513B1 (en) * | 1996-08-13 | 2001-01-30 | Kabushiki Kaisha Toshiba | Apparatus and method for manufacturing a semiconductor device having a multi-wiring layer structure |
Also Published As
Publication number | Publication date |
---|---|
CN101770978A (zh) | 2010-07-07 |
DE102009052393A1 (de) | 2010-07-01 |
US20100167532A1 (en) | 2010-07-01 |
JP2010157700A (ja) | 2010-07-15 |
CN101770978B (zh) | 2014-04-16 |
DE102009052393B4 (de) | 2017-11-16 |
TW201029112A (en) | 2010-08-01 |
TWI415218B (zh) | 2013-11-11 |
US8236691B2 (en) | 2012-08-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8127 | New person/name/address of the applicant |
Owner name: NUMONYX B.V., ROLLE, CH |
|
8181 | Inventor (new situation) |
Inventor name: SHOR, YAKOV, BEER, SHEVA, IL Inventor name: HORVITZ, DROR, BEAR TUVIYA, IL Inventor name: ROTLAIN, MAOR, QIRYAT GAT, IL Inventor name: ALTSHULER, SEMEON, RISHON LE ZION, IL Inventor name: ALOH, YIGAL, GAN YAVNE, IL |
|
R082 | Change of representative |
Representative=s name: SAMSON & PARTNER, PATENTANWAELTE, 80538 MUENCHEN, Representative=s name: SAMSON & PARTNER, PATENTANWAELTE, DE |
|
R081 | Change of applicant/patentee |
Owner name: MICRON TECHNOLOGY, INC., BOISE, US Free format text: FORMER OWNER: NUMONYX B.V., ROLLE, CH Effective date: 20120521 |
|
R082 | Change of representative |
Representative=s name: SAMSON & PARTNER, PATENTANWAELTE, DE Effective date: 20120521 Representative=s name: SAMSON & PARTNER PATENTANWAELTE MBB, DE Effective date: 20120521 |
|
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R083 | Amendment of/additions to inventor(s) | ||
R020 | Patent grant now final |