CN101770978A - 高长宽比的插头填充方法 - Google Patents
高长宽比的插头填充方法 Download PDFInfo
- Publication number
- CN101770978A CN101770978A CN200910222342A CN200910222342A CN101770978A CN 101770978 A CN101770978 A CN 101770978A CN 200910222342 A CN200910222342 A CN 200910222342A CN 200910222342 A CN200910222342 A CN 200910222342A CN 101770978 A CN101770978 A CN 101770978A
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- China
- Prior art keywords
- via hole
- layer
- packing material
- silicide
- sidewall
- Prior art date
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- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000000463 material Substances 0.000 claims description 62
- 238000012856 packing Methods 0.000 claims description 60
- 229910021332 silicide Inorganic materials 0.000 claims description 40
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 24
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 238000005240 physical vapour deposition Methods 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 1
- 230000006911 nucleation Effects 0.000 abstract description 11
- 238000010899 nucleation Methods 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/347,721 | 2008-12-31 | ||
US12/347,721 US8236691B2 (en) | 2008-12-31 | 2008-12-31 | Method of high aspect ratio plug fill |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101770978A true CN101770978A (zh) | 2010-07-07 |
CN101770978B CN101770978B (zh) | 2014-04-16 |
Family
ID=42221054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910222342.7A Active CN101770978B (zh) | 2008-12-31 | 2009-11-13 | 高长宽比的插头填充方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8236691B2 (zh) |
JP (1) | JP2010157700A (zh) |
CN (1) | CN101770978B (zh) |
DE (1) | DE102009052393B8 (zh) |
TW (1) | TWI415218B (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104157562A (zh) * | 2014-08-26 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | 半导体结构的形成方法 |
CN110004429A (zh) * | 2012-03-27 | 2019-07-12 | 诺发系统公司 | 钨特征填充 |
US11069535B2 (en) | 2015-08-07 | 2021-07-20 | Lam Research Corporation | Atomic layer etch of tungsten for enhanced tungsten deposition fill |
US11348795B2 (en) | 2017-08-14 | 2022-05-31 | Lam Research Corporation | Metal fill process for three-dimensional vertical NAND wordline |
US11355345B2 (en) | 2016-08-16 | 2022-06-07 | Lam Research Corporation | Method for preventing line bending during metal fill process |
US11410883B2 (en) | 2009-08-04 | 2022-08-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
US11549175B2 (en) | 2018-05-03 | 2023-01-10 | Lam Research Corporation | Method of depositing tungsten and other metals in 3D NAND structures |
US11901227B2 (en) | 2014-09-30 | 2024-02-13 | Lam Research Corporation | Feature fill with nucleation inhibition |
US11972952B2 (en) | 2018-12-14 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition on 3D NAND structures |
US11978666B2 (en) | 2018-12-05 | 2024-05-07 | Lam Research Corporation | Void free low stress fill |
US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9640482B1 (en) * | 2016-04-13 | 2017-05-02 | United Microelectronics Corp. | Semiconductor device with a contact plug and method of fabricating the same |
KR102441431B1 (ko) * | 2016-06-06 | 2022-09-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 표면을 갖는 기판을 프로세싱 챔버에 포지셔닝하는 단계를 포함하는 프로세싱 방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2061119C (en) * | 1991-04-19 | 1998-02-03 | Pei-Ing P. Lee | Method of depositing conductors in high aspect ratio apertures |
JP3149887B2 (ja) * | 1991-11-08 | 2001-03-26 | 新日本製鐵株式会社 | スパッタ成膜方法及びスパッタ成膜装置 |
JPH08191054A (ja) * | 1995-01-10 | 1996-07-23 | Kawasaki Steel Corp | 半導体装置及びその製造方法 |
JPH08213610A (ja) * | 1995-02-07 | 1996-08-20 | Sony Corp | 電界効果型半導体装置及びその製造方法 |
US5757879A (en) * | 1995-06-07 | 1998-05-26 | International Business Machines Corporation | Tungsten absorber for x-ray mask |
US6406998B1 (en) * | 1996-02-05 | 2002-06-18 | Micron Technology, Inc. | Formation of silicided contact by ion implantation |
JPH1064848A (ja) * | 1996-08-13 | 1998-03-06 | Toshiba Corp | 半導体装置の製造装置および製造方法 |
US5918141A (en) * | 1997-06-20 | 1999-06-29 | National Semiconductor Corporation | Method of masking silicide deposition utilizing a photoresist mask |
US6696746B1 (en) * | 1998-04-29 | 2004-02-24 | Micron Technology, Inc. | Buried conductors |
KR100319681B1 (ko) * | 1998-12-02 | 2002-01-09 | 가네꼬 히사시 | 전계 효과 트랜지스터 및 그 제조 방법 |
US6686278B2 (en) * | 2001-06-19 | 2004-02-03 | United Microelectronics Corp. | Method for forming a plug metal layer |
TWI270180B (en) * | 2004-06-21 | 2007-01-01 | Powerchip Semiconductor Corp | Flash memory cell and manufacturing method thereof |
ITMI20070446A1 (it) * | 2007-03-06 | 2008-09-07 | St Microelectronics Srl | Processo perfabbricare circuiti integrati formati su un substrato seminconduttore e comprendenti strati di tungsteno |
US8372744B2 (en) * | 2007-04-20 | 2013-02-12 | International Business Machines Corporation | Fabricating a contact rhodium structure by electroplating and electroplating composition |
KR20090074561A (ko) * | 2008-01-02 | 2009-07-07 | 주식회사 하이닉스반도체 | 반도체소자의 컨택 형성방법 |
US20100065949A1 (en) * | 2008-09-17 | 2010-03-18 | Andreas Thies | Stacked Semiconductor Chips with Through Substrate Vias |
-
2008
- 2008-12-31 US US12/347,721 patent/US8236691B2/en active Active
-
2009
- 2009-11-05 JP JP2009269279A patent/JP2010157700A/ja active Pending
- 2009-11-09 DE DE102009052393.6A patent/DE102009052393B8/de active Active
- 2009-11-13 CN CN200910222342.7A patent/CN101770978B/zh active Active
- 2009-11-26 TW TW098140387A patent/TWI415218B/zh active
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11410883B2 (en) | 2009-08-04 | 2022-08-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
CN110004429B (zh) * | 2012-03-27 | 2021-08-31 | 诺发系统公司 | 钨特征填充 |
CN110004429A (zh) * | 2012-03-27 | 2019-07-12 | 诺发系统公司 | 钨特征填充 |
US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
CN104157562A (zh) * | 2014-08-26 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | 半导体结构的形成方法 |
US11901227B2 (en) | 2014-09-30 | 2024-02-13 | Lam Research Corporation | Feature fill with nucleation inhibition |
US11069535B2 (en) | 2015-08-07 | 2021-07-20 | Lam Research Corporation | Atomic layer etch of tungsten for enhanced tungsten deposition fill |
US11355345B2 (en) | 2016-08-16 | 2022-06-07 | Lam Research Corporation | Method for preventing line bending during metal fill process |
US11348795B2 (en) | 2017-08-14 | 2022-05-31 | Lam Research Corporation | Metal fill process for three-dimensional vertical NAND wordline |
US11549175B2 (en) | 2018-05-03 | 2023-01-10 | Lam Research Corporation | Method of depositing tungsten and other metals in 3D NAND structures |
US11978666B2 (en) | 2018-12-05 | 2024-05-07 | Lam Research Corporation | Void free low stress fill |
US11972952B2 (en) | 2018-12-14 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition on 3D NAND structures |
US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
Also Published As
Publication number | Publication date |
---|---|
US8236691B2 (en) | 2012-08-07 |
JP2010157700A (ja) | 2010-07-15 |
CN101770978B (zh) | 2014-04-16 |
TWI415218B (zh) | 2013-11-11 |
US20100167532A1 (en) | 2010-07-01 |
TW201029112A (en) | 2010-08-01 |
DE102009052393A1 (de) | 2010-07-01 |
DE102009052393B4 (de) | 2017-11-16 |
DE102009052393B8 (de) | 2018-02-08 |
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Effective date of registration: 20150424 Address after: Idaho Patentee after: Micron Technology, Inc. Address before: Swiss Rolle Patentee before: NUMONYX B.V. Effective date of registration: 20150424 Address after: Swiss Rolle Patentee after: NUMONYX B.V. Address before: Israel shevah Patentee before: Y. Schur Patentee before: Altshuler Semeon Patentee before: Horvitz Dror Patentee before: Rotlain Maor Patentee before: Shor Yakov |