DE10051600C2 - Verfahren zur Herstellung einer Halbleitervorrichtung mit Grabenisolationsbereichen und Halbleitervorrichtung mit einer Elementisolationsstruktur - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung mit Grabenisolationsbereichen und Halbleitervorrichtung mit einer Elementisolationsstruktur

Info

Publication number
DE10051600C2
DE10051600C2 DE10051600A DE10051600A DE10051600C2 DE 10051600 C2 DE10051600 C2 DE 10051600C2 DE 10051600 A DE10051600 A DE 10051600A DE 10051600 A DE10051600 A DE 10051600A DE 10051600 C2 DE10051600 C2 DE 10051600C2
Authority
DE
Germany
Prior art keywords
film
trench
nitride film
insulation
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10051600A
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German (de)
English (en)
Other versions
DE10051600A1 (de
Inventor
Tatsuya Kunikiyo
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10051600A1 publication Critical patent/DE10051600A1/de
Application granted granted Critical
Publication of DE10051600C2 publication Critical patent/DE10051600C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE10051600A 1999-11-11 2000-10-18 Verfahren zur Herstellung einer Halbleitervorrichtung mit Grabenisolationsbereichen und Halbleitervorrichtung mit einer Elementisolationsstruktur Expired - Fee Related DE10051600C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32132999A JP2001144170A (ja) 1999-11-11 1999-11-11 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE10051600A1 DE10051600A1 (de) 2001-05-23
DE10051600C2 true DE10051600C2 (de) 2003-05-08

Family

ID=18131386

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10051600A Expired - Fee Related DE10051600C2 (de) 1999-11-11 2000-10-18 Verfahren zur Herstellung einer Halbleitervorrichtung mit Grabenisolationsbereichen und Halbleitervorrichtung mit einer Elementisolationsstruktur

Country Status (5)

Country Link
US (2) US6333232B1 (https=)
JP (1) JP2001144170A (https=)
KR (1) KR100376237B1 (https=)
DE (1) DE10051600C2 (https=)
TW (1) TW497203B (https=)

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US6333232B1 (en) 2001-12-25
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