JP2001144170A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2001144170A
JP2001144170A JP32132999A JP32132999A JP2001144170A JP 2001144170 A JP2001144170 A JP 2001144170A JP 32132999 A JP32132999 A JP 32132999A JP 32132999 A JP32132999 A JP 32132999A JP 2001144170 A JP2001144170 A JP 2001144170A
Authority
JP
Japan
Prior art keywords
film
trench
forming
semiconductor
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32132999A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001144170A5 (https=
Inventor
Tatsuya Kunikiyo
辰也 國清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP32132999A priority Critical patent/JP2001144170A/ja
Priority to US09/549,378 priority patent/US6333232B1/en
Priority to TW089121565A priority patent/TW497203B/zh
Priority to DE10051600A priority patent/DE10051600C2/de
Priority to KR10-2000-0061878A priority patent/KR100376237B1/ko
Publication of JP2001144170A publication Critical patent/JP2001144170A/ja
Priority to US09/978,659 priority patent/US6495424B2/en
Publication of JP2001144170A5 publication Critical patent/JP2001144170A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP32132999A 1999-11-11 1999-11-11 半導体装置およびその製造方法 Pending JP2001144170A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP32132999A JP2001144170A (ja) 1999-11-11 1999-11-11 半導体装置およびその製造方法
US09/549,378 US6333232B1 (en) 1999-11-11 2000-04-13 Semiconductor device and method of manufacturing the same
TW089121565A TW497203B (en) 1999-11-11 2000-10-16 Semiconductor device and method of manufacturing the same
DE10051600A DE10051600C2 (de) 1999-11-11 2000-10-18 Verfahren zur Herstellung einer Halbleitervorrichtung mit Grabenisolationsbereichen und Halbleitervorrichtung mit einer Elementisolationsstruktur
KR10-2000-0061878A KR100376237B1 (ko) 1999-11-11 2000-10-20 반도체 장치 및 그 제조 방법
US09/978,659 US6495424B2 (en) 1999-11-11 2001-10-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32132999A JP2001144170A (ja) 1999-11-11 1999-11-11 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2001144170A true JP2001144170A (ja) 2001-05-25
JP2001144170A5 JP2001144170A5 (https=) 2006-12-21

Family

ID=18131386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32132999A Pending JP2001144170A (ja) 1999-11-11 1999-11-11 半導体装置およびその製造方法

Country Status (5)

Country Link
US (2) US6333232B1 (https=)
JP (1) JP2001144170A (https=)
KR (1) KR100376237B1 (https=)
DE (1) DE10051600C2 (https=)
TW (1) TW497203B (https=)

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KR20020096137A (ko) * 2001-06-18 2002-12-31 주식회사 하이닉스반도체 반도체 소자의 격리막 제조방법
KR20030043601A (ko) * 2001-11-28 2003-06-02 미쓰비시덴키 가부시키가이샤 반도체 장치의 제조 방법
KR100408862B1 (ko) * 2001-06-29 2003-12-06 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
KR100421046B1 (ko) * 2001-07-13 2004-03-04 삼성전자주식회사 반도체 장치 및 그 제조방법
US6894363B2 (en) * 2001-10-09 2005-05-17 Elpida Memory, Inc. Semiconductor device using shallow trench isolation and method of fabricating the same
JP2005303044A (ja) * 2004-04-13 2005-10-27 Elpida Memory Inc 半導体装置の製造方法
US7279769B2 (en) 2004-05-25 2007-10-09 Renesas Technology Corp. Semiconductor device and manufacturing method thereof
JP2007288137A (ja) * 2006-03-24 2007-11-01 Elpida Memory Inc 半導体装置及びその製造方法
JP2008124211A (ja) * 2006-11-10 2008-05-29 Fujitsu Ltd 半導体装置の製造方法
KR100865853B1 (ko) * 2006-06-29 2008-10-29 주식회사 하이닉스반도체 소자 분리막을 포함하는 반도체 소자 및 그것의 형성 방법
US7732277B2 (en) 2006-09-26 2010-06-08 Kabushiki Kaisha Toshiba Semiconductor device and method of fabricating the same
JP2011086840A (ja) * 2009-10-16 2011-04-28 Canon Inc 半導体素子及び半導体素子の形成方法
JP2018133585A (ja) * 2018-04-26 2018-08-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10651094B2 (en) 2014-11-13 2020-05-12 Renesas Electronics Corporation Semiconductor device and method of manufacturing same

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JP3629187B2 (ja) * 2000-06-28 2005-03-16 株式会社東芝 電気フューズ、この電気フューズを備えた半導体装置及びその製造方法
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