JP2001144170A5 - - Google Patents

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Publication number
JP2001144170A5
JP2001144170A5 JP1999321329A JP32132999A JP2001144170A5 JP 2001144170 A5 JP2001144170 A5 JP 2001144170A5 JP 1999321329 A JP1999321329 A JP 1999321329A JP 32132999 A JP32132999 A JP 32132999A JP 2001144170 A5 JP2001144170 A5 JP 2001144170A5
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JP
Japan
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film
semiconductor
semiconductor film
trench
forming
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JP1999321329A
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Japanese (ja)
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JP2001144170A (ja
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Priority to JP32132999A priority Critical patent/JP2001144170A/ja
Priority claimed from JP32132999A external-priority patent/JP2001144170A/ja
Priority to US09/549,378 priority patent/US6333232B1/en
Priority to TW089121565A priority patent/TW497203B/zh
Priority to DE10051600A priority patent/DE10051600C2/de
Priority to KR10-2000-0061878A priority patent/KR100376237B1/ko
Publication of JP2001144170A publication Critical patent/JP2001144170A/ja
Priority to US09/978,659 priority patent/US6495424B2/en
Publication of JP2001144170A5 publication Critical patent/JP2001144170A5/ja
Pending legal-status Critical Current

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JP32132999A 1999-11-11 1999-11-11 半導体装置およびその製造方法 Pending JP2001144170A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP32132999A JP2001144170A (ja) 1999-11-11 1999-11-11 半導体装置およびその製造方法
US09/549,378 US6333232B1 (en) 1999-11-11 2000-04-13 Semiconductor device and method of manufacturing the same
TW089121565A TW497203B (en) 1999-11-11 2000-10-16 Semiconductor device and method of manufacturing the same
DE10051600A DE10051600C2 (de) 1999-11-11 2000-10-18 Verfahren zur Herstellung einer Halbleitervorrichtung mit Grabenisolationsbereichen und Halbleitervorrichtung mit einer Elementisolationsstruktur
KR10-2000-0061878A KR100376237B1 (ko) 1999-11-11 2000-10-20 반도체 장치 및 그 제조 방법
US09/978,659 US6495424B2 (en) 1999-11-11 2001-10-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32132999A JP2001144170A (ja) 1999-11-11 1999-11-11 半導体装置およびその製造方法

Publications (2)

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JP2001144170A JP2001144170A (ja) 2001-05-25
JP2001144170A5 true JP2001144170A5 (https=) 2006-12-21

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JP32132999A Pending JP2001144170A (ja) 1999-11-11 1999-11-11 半導体装置およびその製造方法

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US (2) US6333232B1 (https=)
JP (1) JP2001144170A (https=)
KR (1) KR100376237B1 (https=)
DE (1) DE10051600C2 (https=)
TW (1) TW497203B (https=)

Families Citing this family (138)

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Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US20020064928A1 (en) * 1999-12-22 2002-05-30 Houston Theodore W. Method for manufacturing a high-frequency integrated circuit for reducing cross-talk and facilitating energy storage
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
JP3629187B2 (ja) * 2000-06-28 2005-03-16 株式会社東芝 電気フューズ、この電気フューズを備えた半導体装置及びその製造方法
KR100390143B1 (ko) * 2000-08-17 2003-07-04 삼성전자주식회사 소이층 밴딩 방지 방법 및 그 방법에 의해 형성되는반도체 장치
KR100854834B1 (ko) 2000-10-10 2008-08-27 더 트러스티스 오브 컬럼비아 유니버시티 인 더 시티 오브 뉴욕 얇은 금속층을 가공하는 방법 및 장치
CN1200320C (zh) * 2000-11-27 2005-05-04 纽约市哥伦比亚大学托管会 用激光结晶化法加工衬底上半导体薄膜区域的方法和掩模投影系统
US6582827B1 (en) * 2000-11-27 2003-06-24 The Trustees Of Columbia University In The City Of New York Specialized substrates for use in sequential lateral solidification processing
KR20020042251A (ko) * 2000-11-30 2002-06-05 박종섭 반도체 소자의 분리구조 제조방법
US6882571B1 (en) 2000-12-19 2005-04-19 Xilinx, Inc. Low voltage non-volatile memory cell
US6496416B1 (en) * 2000-12-19 2002-12-17 Xilinx, Inc. Low voltage non-volatile memory cell
JP2002203894A (ja) * 2001-01-04 2002-07-19 Mitsubishi Electric Corp 半導体装置の製造方法
US7060573B2 (en) * 2001-01-16 2006-06-13 Chartered Semiconductor Manufacturing Ltd. Extended poly buffer STI scheme
US6583488B1 (en) * 2001-03-26 2003-06-24 Advanced Micro Devices, Inc. Low density, tensile stress reducing material for STI trench fill
US6498383B2 (en) * 2001-05-23 2002-12-24 International Business Machines Corporation Oxynitride shallow trench isolation and method of formation
KR20020096137A (ko) * 2001-06-18 2002-12-31 주식회사 하이닉스반도체 반도체 소자의 격리막 제조방법
JP2003017595A (ja) * 2001-06-29 2003-01-17 Toshiba Corp 半導体装置
KR100408862B1 (ko) * 2001-06-29 2003-12-06 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
US6599813B2 (en) * 2001-06-29 2003-07-29 International Business Machines Corporation Method of forming shallow trench isolation for thin silicon-on-insulator substrates
KR100421046B1 (ko) * 2001-07-13 2004-03-04 삼성전자주식회사 반도체 장치 및 그 제조방법
KR100387531B1 (ko) * 2001-07-30 2003-06-18 삼성전자주식회사 반도체소자 제조방법
US6667224B1 (en) 2001-08-13 2003-12-23 Cypress Semiconductor Corp. Method to eliminate inverse narrow width effect in small geometry MOS transistors
US7160763B2 (en) * 2001-08-27 2007-01-09 The Trustees Of Columbia University In The City Of New York Polycrystalline TFT uniformity through microstructure mis-alignment
KR100428768B1 (ko) * 2001-08-29 2004-04-30 삼성전자주식회사 트렌치 소자 분리형 반도체 장치 및 그 형성 방법
KR100421911B1 (ko) * 2001-09-20 2004-03-11 주식회사 하이닉스반도체 반도체 소자의 격리 영역 형성 방법
JP2003100869A (ja) * 2001-09-27 2003-04-04 Toshiba Corp 半導体装置とその製造方法
JP3577024B2 (ja) * 2001-10-09 2004-10-13 エルピーダメモリ株式会社 半導体装置及びその製造方法
US7560385B2 (en) * 2001-10-17 2009-07-14 Texas Instruments Incorporated Etching systems and processing gas specie modulation
JP2003163262A (ja) * 2001-11-28 2003-06-06 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4139105B2 (ja) * 2001-12-20 2008-08-27 株式会社ルネサステクノロジ 半導体装置の製造方法
US6677211B2 (en) * 2002-01-14 2004-01-13 Macronix International Co., Ltd. Method for eliminating polysilicon residue
US6780730B2 (en) * 2002-01-31 2004-08-24 Infineon Technologies Ag Reduction of negative bias temperature instability in narrow width PMOS using F2 implantation
KR100442615B1 (ko) * 2002-03-05 2004-08-02 삼성전자주식회사 정전용량 감소를 위한 적층구조 및 그 제조방법
WO2003084688A2 (en) * 2002-04-01 2003-10-16 The Trustees Of Columbia University In The City Of New York Method and system for providing a thin film
JP2003309192A (ja) * 2002-04-17 2003-10-31 Fujitsu Ltd 不揮発性半導体メモリおよびその製造方法
TWI291719B (en) * 2002-05-14 2007-12-21 Nanya Technology Corp Method for forming floating gate
US6759302B1 (en) * 2002-07-30 2004-07-06 Taiwan Semiconductor Manufacturing Company Method of generating multiple oxides by plasma nitridation on oxide
US6777281B1 (en) * 2002-08-08 2004-08-17 Advanced Micro Devices, Inc. Maintaining LDD series resistance of MOS transistors by retarding dopant segregation
AU2003265498A1 (en) * 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within areas in such regions and edge areas thereof, and a structure of such film regions
AU2003272222A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
WO2004017379A2 (en) * 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Process and system for processing a thin film sample and thin film structure
TWI331803B (en) 2002-08-19 2010-10-11 Univ Columbia A single-shot semiconductor processing system and method having various irradiation patterns
US6884638B1 (en) * 2002-08-20 2005-04-26 Advanced Micro Devices, Inc. Method of fabricating a flash memory semiconductor device by determining the active region width between shallow trench isolation structures using an overdrive current measurement technique and a device thereby fabricated
US6784075B2 (en) * 2002-09-10 2004-08-31 Silicon Integrated Systems Corp. Method of forming shallow trench isolation with silicon oxynitride barrier film
US6930920B1 (en) 2002-10-29 2005-08-16 Xilinx, Inc. Low voltage non-volatile memory cell
KR100480897B1 (ko) * 2002-12-09 2005-04-07 매그나칩 반도체 유한회사 반도체소자의 소자분리막 형성방법
KR100829367B1 (ko) * 2002-12-17 2008-05-13 동부일렉트로닉스 주식회사 반도체 소자의 트렌치 제조 방법
KR101191837B1 (ko) 2003-02-19 2012-10-18 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 순차적 측면 고상화 기술을 이용하여 결정화되는 복수의 반도체 박막을 가공하는 방법 및 장치
TW200421560A (en) * 2003-04-10 2004-10-16 Macronix Int Co Ltd Method for improvement of edge breakdown caused by edge electrical field at a tunnel oxide of a high-density flash memory by a shielded bird's beak
KR100554836B1 (ko) * 2003-06-30 2006-03-03 주식회사 하이닉스반도체 플래시 메모리 소자의 제조방법
US7342289B2 (en) * 2003-08-08 2008-03-11 Taiwan Semiconductor Manufacturing Co., Ltd Strained silicon MOS devices
US6974755B2 (en) * 2003-08-15 2005-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structure with nitrogen-containing liner and methods of manufacture
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
TWI351713B (en) 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US7364952B2 (en) 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
KR100571405B1 (ko) * 2003-12-24 2006-04-14 동부아남반도체 주식회사 반도체 소자의 소자 분리막 형성 방법
US7112513B2 (en) * 2004-02-19 2006-09-26 Micron Technology, Inc. Sub-micron space liner and densification process
JP4577680B2 (ja) * 2004-04-13 2010-11-10 エルピーダメモリ株式会社 半導体装置の製造方法
JP2005340327A (ja) 2004-05-25 2005-12-08 Renesas Technology Corp 半導体装置及びその製造方法
US7176104B1 (en) * 2004-06-08 2007-02-13 Integrated Device Technology, Inc. Method for forming shallow trench isolation structure with deep oxide region
US20060038293A1 (en) * 2004-08-23 2006-02-23 Rueger Neal R Inter-metal dielectric fill
US7271464B2 (en) * 2004-08-24 2007-09-18 Micron Technology, Inc. Liner for shallow trench isolation
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US7271463B2 (en) * 2004-12-10 2007-09-18 Micron Technology, Inc. Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base
JP4961668B2 (ja) * 2005-01-11 2012-06-27 富士電機株式会社 半導体装置の製造方法
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
JP2006310625A (ja) * 2005-04-28 2006-11-09 Toshiba Corp 半導体記憶装置
KR100670666B1 (ko) * 2005-06-28 2007-01-17 주식회사 하이닉스반도체 반도체 소자 제조 방법
US20070018278A1 (en) * 2005-07-25 2007-01-25 Michael Kund Semiconductor memory device
US7432148B2 (en) * 2005-08-31 2008-10-07 Micron Technology, Inc. Shallow trench isolation by atomic-level silicon reconstruction
US7183162B1 (en) * 2005-11-21 2007-02-27 Intel Corporation Method of forming non-volatile memory cell using sacrificial pillar spacers and non-volatile memory cell formed according to the method
WO2007067541A2 (en) 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
KR100734670B1 (ko) * 2005-12-26 2007-07-02 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
US7767515B2 (en) * 2006-02-27 2010-08-03 Synopsys, Inc. Managing integrated circuit stress using stress adjustment trenches
JP5524443B2 (ja) * 2006-03-24 2014-06-18 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
US7670895B2 (en) 2006-04-24 2010-03-02 Freescale Semiconductor, Inc Process of forming an electronic device including a semiconductor layer and another layer adjacent to an opening within the semiconductor layer
US7491622B2 (en) 2006-04-24 2009-02-17 Freescale Semiconductor, Inc. Process of forming an electronic device including a layer formed using an inductively coupled plasma
US7528078B2 (en) 2006-05-12 2009-05-05 Freescale Semiconductor, Inc. Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer
KR100865853B1 (ko) * 2006-06-29 2008-10-29 주식회사 하이닉스반도체 소자 분리막을 포함하는 반도체 소자 및 그것의 형성 방법
US7790540B2 (en) * 2006-08-25 2010-09-07 International Business Machines Corporation Structure and method to use low k stress liner to reduce parasitic capacitance
JP4836730B2 (ja) 2006-09-26 2011-12-14 株式会社東芝 半導体装置、およびその製造方法
JP2008124211A (ja) * 2006-11-10 2008-05-29 Fujitsu Ltd 半導体装置の製造方法
US7879663B2 (en) * 2007-03-08 2011-02-01 Freescale Semiconductor, Inc. Trench formation in a semiconductor material
US7691693B2 (en) * 2007-06-01 2010-04-06 Synopsys, Inc. Method for suppressing layout sensitivity of threshold voltage in a transistor array
JP2008300779A (ja) * 2007-06-04 2008-12-11 Elpida Memory Inc 半導体装置及びその製造方法
US7781306B2 (en) * 2007-06-20 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor substrate and method for manufacturing the same
US20090039458A1 (en) * 2007-08-10 2009-02-12 Qimonda Ag Integrated device
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
JP5385289B2 (ja) 2007-09-25 2014-01-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法
US7895548B2 (en) * 2007-10-26 2011-02-22 Synopsys, Inc. Filler cells for design optimization in a place-and-route system
US20090108408A1 (en) * 2007-10-29 2009-04-30 Synopsys, Inc. Method for Trapping Implant Damage in a Semiconductor Substrate
US9472423B2 (en) * 2007-10-30 2016-10-18 Synopsys, Inc. Method for suppressing lattice defects in a semiconductor substrate
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
KR20100105606A (ko) 2007-11-21 2010-09-29 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에피택셜하게 텍스쳐화된 후막의 제조를 위한 시스템 및 방법
US7902611B1 (en) 2007-11-27 2011-03-08 Altera Corporation Integrated circuit well isolation structures
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
US8125037B2 (en) 2008-08-12 2012-02-28 International Business Machines Corporation Field effect transistor with channel region edge and center portions having different band structures for suppressed corner leakage
US7838353B2 (en) * 2008-08-12 2010-11-23 International Business Machines Corporation Field effect transistor with suppressed corner leakage through channel material band-edge modulation, design structure and method
US8237233B2 (en) * 2008-08-19 2012-08-07 International Business Machines Corporation Field effect transistor having a gate structure with a first section above a center portion of the channel region and having a first effective work function and second sections above edges of the channel region and having a second effective work function
US8101497B2 (en) 2008-09-11 2012-01-24 Micron Technology, Inc. Self-aligned trench formation
KR101506901B1 (ko) * 2008-10-15 2015-03-30 삼성전자주식회사 반도체 소자의 제조 방법
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
KR100987794B1 (ko) * 2008-12-22 2010-10-13 한국전자통신연구원 반도체 장치의 제조 방법
JP2010153583A (ja) * 2008-12-25 2010-07-08 Renesas Electronics Corp 半導体装置の製造方法
JP5629450B2 (ja) * 2009-10-16 2014-11-19 キヤノン株式会社 半導体素子及び半導体素子の形成方法
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8987818B1 (en) 2009-11-13 2015-03-24 Maxim Integrated Products, Inc. Integrated MOS power transistor with thin gate oxide and low gate charge
US8946851B1 (en) 2009-11-13 2015-02-03 Maxim Integrated Products, Inc. Integrated MOS power transistor with thin gate oxide and low gate charge
US20110115019A1 (en) * 2009-11-13 2011-05-19 Maxim Integrated Products, Inc. Cmos compatible low gate charge lateral mosfet
US8963241B1 (en) 2009-11-13 2015-02-24 Maxim Integrated Products, Inc. Integrated MOS power transistor with poly field plate extension for depletion assist
US8969958B1 (en) 2009-11-13 2015-03-03 Maxim Integrated Products, Inc. Integrated MOS power transistor with body extension region for poly field plate depletion assist
US20110115018A1 (en) * 2009-11-13 2011-05-19 Maxim Integrated Products, Inc. Mos power transistor
US10672748B1 (en) 2010-06-02 2020-06-02 Maxim Integrated Products, Inc. Use of device assembly for a generalization of three-dimensional heterogeneous technologies integration
US8349653B2 (en) 2010-06-02 2013-01-08 Maxim Integrated Products, Inc. Use of device assembly for a generalization of three-dimensional metal interconnect technologies
US9484269B2 (en) * 2010-06-24 2016-11-01 Globalfoundries Inc. Structure and method to control bottom corner threshold in an SOI device
KR20120133652A (ko) * 2011-05-31 2012-12-11 삼성전자주식회사 반도체 소자의 제조 방법
EP2573807A1 (en) * 2011-09-23 2013-03-27 Soitec Semiconductor structure and process for bird's beak reduction
US8679929B2 (en) * 2011-12-06 2014-03-25 Texas Instruments Incorporated On current in one-time-programmable memory cells
US20150087135A1 (en) * 2013-09-26 2015-03-26 Texas Instruments Incorporated Method of forming a trench isolation structure using a sion layer
JP6334370B2 (ja) 2014-11-13 2018-05-30 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10707330B2 (en) 2018-02-15 2020-07-07 Globalfoundries Inc. Semiconductor device with interconnect to source/drain
JP2018133585A (ja) * 2018-04-26 2018-08-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10636870B2 (en) * 2018-08-15 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Isolation regions for reduced junction leakage
CN110970345B (zh) * 2018-09-29 2024-12-06 长鑫存储技术有限公司 半导体结构及制备方法
CN113517193B (zh) * 2021-04-06 2022-03-11 江苏新顺微电子股份有限公司 一种提高沟槽mos结构肖特基二极管性能的工艺方法
CN115915749B (zh) * 2023-01-19 2023-06-02 合肥晶合集成电路股份有限公司 半导体结构及其制作方法
CN119922935B (zh) * 2025-01-17 2026-02-17 长飞先进半导体(武汉)有限公司 半导体器件及制作方法、功率模块、功率转换电路和车辆
CN120656992B (zh) * 2025-08-20 2025-12-16 合肥晶合集成电路股份有限公司 一种浅沟槽隔离结构的制造方法及浅沟槽隔离结构

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5447884A (en) 1994-06-29 1995-09-05 International Business Machines Corporation Shallow trench isolation with thin nitride liner
JPH08203884A (ja) * 1995-01-31 1996-08-09 Mitsubishi Electric Corp オキシナイトライド膜およびその形成方法ならびにそのオキシナイトライド膜を用いた素子分離酸化膜の形成方法
JPH08213382A (ja) * 1995-02-02 1996-08-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH0982794A (ja) * 1995-09-20 1997-03-28 Matsushita Electric Ind Co Ltd トレンチ分離形成方法
US5719085A (en) * 1995-09-29 1998-02-17 Intel Corporation Shallow trench isolation technique
JP3604791B2 (ja) 1995-11-09 2004-12-22 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3688816B2 (ja) * 1996-07-16 2005-08-31 株式会社東芝 半導体装置の製造方法
US5780346A (en) * 1996-12-31 1998-07-14 Intel Corporation N2 O nitrided-oxide trench sidewalls and method of making isolation structure
US5763315A (en) * 1997-01-28 1998-06-09 International Business Machines Corporation Shallow trench isolation with oxide-nitride/oxynitride liner
JPH10303289A (ja) * 1997-04-30 1998-11-13 Hitachi Ltd 半導体集積回路装置の製造方法
KR100230817B1 (ko) 1997-03-24 1999-11-15 김영환 반도체 소자의 셜로우 트렌치 아이솔레이션 방법
JPH113936A (ja) 1997-06-13 1999-01-06 Nec Corp 半導体装置の製造方法
JP3125719B2 (ja) 1997-07-28 2001-01-22 日本電気株式会社 半導体装置及びその製造方法
JPH1167752A (ja) * 1997-08-08 1999-03-09 Mitsubishi Electric Corp 半導体装置の製造方法
US6143625A (en) * 1997-11-19 2000-11-07 Texas Instruments Incorporated Protective liner for isolation trench side walls and method
US6008109A (en) * 1997-12-19 1999-12-28 Advanced Micro Devices, Inc. Trench isolation structure having a low K dielectric encapsulated by oxide
JP3519589B2 (ja) * 1997-12-24 2004-04-19 株式会社ルネサステクノロジ 半導体集積回路の製造方法
TW407335B (en) * 1998-01-23 2000-10-01 United Microelectronics Corp Method of producing shallow trench isolation
US6074932A (en) * 1998-01-28 2000-06-13 Texas Instruments - Acer Incorporated Method for forming a stress-free shallow trench isolation
TW368727B (en) * 1998-03-17 1999-09-01 United Microelectronics Corp Manufacturing method for shallow trench isolation structure
US5989978A (en) * 1998-07-16 1999-11-23 Chartered Semiconductor Manufacturing, Ltd. Shallow trench isolation of MOSFETS with reduced corner parasitic currents
US6156620A (en) * 1998-07-22 2000-12-05 Lsi Logic Corporation Isolation trench in semiconductor substrate with nitrogen-containing barrier region, and process for forming same
KR100292616B1 (ko) * 1998-10-09 2001-07-12 윤종용 트렌치격리의제조방법
KR100315441B1 (ko) * 1999-03-25 2001-11-28 황인길 반도체 소자 분리를 위한 얕은 트렌치 제조 방법
JP2001085511A (ja) * 1999-09-14 2001-03-30 Toshiba Corp 素子分離方法

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