KR100376237B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100376237B1
KR100376237B1 KR10-2000-0061878A KR20000061878A KR100376237B1 KR 100376237 B1 KR100376237 B1 KR 100376237B1 KR 20000061878 A KR20000061878 A KR 20000061878A KR 100376237 B1 KR100376237 B1 KR 100376237B1
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South Korea
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film
silicon
semiconductor
trench
sti
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Korean (ko)
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KR20010051166A (ko
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구니끼요다쯔야
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR10-2000-0061878A 1999-11-11 2000-10-20 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100376237B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32132999A JP2001144170A (ja) 1999-11-11 1999-11-11 半導体装置およびその製造方法
JP1999-321329 1999-11-11

Publications (2)

Publication Number Publication Date
KR20010051166A KR20010051166A (ko) 2001-06-25
KR100376237B1 true KR100376237B1 (ko) 2003-03-15

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KR10-2000-0061878A Expired - Fee Related KR100376237B1 (ko) 1999-11-11 2000-10-20 반도체 장치 및 그 제조 방법

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Country Link
US (2) US6333232B1 (https=)
JP (1) JP2001144170A (https=)
KR (1) KR100376237B1 (https=)
DE (1) DE10051600C2 (https=)
TW (1) TW497203B (https=)

Families Citing this family (138)

* Cited by examiner, † Cited by third party
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