CN1339160A - 半导体集成电路和非易失性存储器元件 - Google Patents
半导体集成电路和非易失性存储器元件 Download PDFInfo
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- CN1339160A CN1339160A CN00803360A CN00803360A CN1339160A CN 1339160 A CN1339160 A CN 1339160A CN 00803360 A CN00803360 A CN 00803360A CN 00803360 A CN00803360 A CN 00803360A CN 1339160 A CN1339160 A CN 1339160A
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- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
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- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
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- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/10—Floating gate memory cells with a single polysilicon layer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (38)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23631/99 | 1999-02-01 | ||
JP2363199 | 1999-02-01 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA200510068934XA Division CN1691338A (zh) | 1999-02-01 | 2000-01-19 | 非易失性存储器元件 |
CNA2005100689335A Division CN1691331A (zh) | 1999-02-01 | 2000-01-19 | 半导体集成电路器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1339160A true CN1339160A (zh) | 2002-03-06 |
CN100359601C CN100359601C (zh) | 2008-01-02 |
Family
ID=12115944
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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CNA2005100689335A Pending CN1691331A (zh) | 1999-02-01 | 2000-01-19 | 半导体集成电路器件 |
CNA200510068934XA Pending CN1691338A (zh) | 1999-02-01 | 2000-01-19 | 非易失性存储器元件 |
CNB008033609A Expired - Fee Related CN100359601C (zh) | 1999-02-01 | 2000-01-19 | 半导体集成电路和非易失性存储器元件 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
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CNA2005100689335A Pending CN1691331A (zh) | 1999-02-01 | 2000-01-19 | 半导体集成电路器件 |
CNA200510068934XA Pending CN1691338A (zh) | 1999-02-01 | 2000-01-19 | 非易失性存储器元件 |
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WO2023216316A1 (zh) * | 2022-05-13 | 2023-11-16 | 长鑫存储技术有限公司 | 驱动电路及其驱动方法、存储器 |
CN116072191A (zh) * | 2023-03-07 | 2023-05-05 | 杭州领开半导体技术有限公司 | 组对结构非易失性存储器及其操作方法 |
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KR100686681B1 (ko) | 2007-02-27 |
EP1703520A1 (en) | 2006-09-20 |
CN1691338A (zh) | 2005-11-02 |
US20040190339A1 (en) | 2004-09-30 |
US6528839B2 (en) | 2003-03-04 |
AU3073800A (en) | 2000-08-25 |
US20060221688A1 (en) | 2006-10-05 |
CN1691331A (zh) | 2005-11-02 |
EP1703520B1 (en) | 2011-07-27 |
CN100359601C (zh) | 2008-01-02 |
US20080037323A1 (en) | 2008-02-14 |
US6545311B2 (en) | 2003-04-08 |
US20050232008A1 (en) | 2005-10-20 |
US7289361B2 (en) | 2007-10-30 |
US20060202274A1 (en) | 2006-09-14 |
EP1150302B1 (en) | 2010-01-06 |
US6771538B2 (en) | 2004-08-03 |
US6614684B1 (en) | 2003-09-02 |
WO2000046809A1 (fr) | 2000-08-10 |
EP1703521A1 (en) | 2006-09-20 |
US20020006054A1 (en) | 2002-01-17 |
US7042764B2 (en) | 2006-05-09 |
EP1150302A4 (en) | 2005-09-21 |
DE60043651D1 (de) | 2010-02-25 |
US7428167B2 (en) | 2008-09-23 |
TW495987B (en) | 2002-07-21 |
US6906954B2 (en) | 2005-06-14 |
KR20010103002A (ko) | 2001-11-17 |
US7463517B2 (en) | 2008-12-09 |
EP1150302A1 (en) | 2001-10-31 |
US20040004894A1 (en) | 2004-01-08 |
US20020126521A1 (en) | 2002-09-12 |
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