FR3007185B1 - Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement - Google Patents
Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnementInfo
- Publication number
- FR3007185B1 FR3007185B1 FR1355439A FR1355439A FR3007185B1 FR 3007185 B1 FR3007185 B1 FR 3007185B1 FR 1355439 A FR1355439 A FR 1355439A FR 1355439 A FR1355439 A FR 1355439A FR 3007185 B1 FR3007185 B1 FR 3007185B1
- Authority
- FR
- France
- Prior art keywords
- type memory
- plan
- methods
- device associating
- memory plan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/0063—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is an EEPROM element, e.g. a floating gate or MNOS transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1355439A FR3007185B1 (fr) | 2013-06-12 | 2013-06-12 | Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement |
US14/298,264 US9245624B2 (en) | 2013-06-12 | 2014-06-06 | Memory device including a SRAM memory plane and a non volatile memory plane, and operating methods |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1355439A FR3007185B1 (fr) | 2013-06-12 | 2013-06-12 | Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3007185A1 FR3007185A1 (fr) | 2014-12-19 |
FR3007185B1 true FR3007185B1 (fr) | 2015-06-19 |
Family
ID=48874398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1355439A Expired - Fee Related FR3007185B1 (fr) | 2013-06-12 | 2013-06-12 | Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement |
Country Status (2)
Country | Link |
---|---|
US (1) | US9245624B2 (fr) |
FR (1) | FR3007185B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3018952B1 (fr) | 2014-03-21 | 2016-04-15 | Stmicroelectronics Rousset | Structure integree comportant des transistors mos voisins |
FR3018944A1 (fr) | 2014-03-21 | 2015-09-25 | St Microelectronics Rousset | Dispositif de memoire associant un plan memoire du type sram et un plan-memoire du type non volatil, durci contre des basculements accidentels |
KR102517711B1 (ko) * | 2016-06-30 | 2023-04-04 | 삼성전자주식회사 | 메모리 셀 및 이를 포함하는 메모리 장치 |
FR3107971B1 (fr) * | 2020-03-03 | 2022-02-18 | St Microelectronics Rousset | Procédé d’écriture de données dans une mémoire d’un transpondeur sans contact, et dispositif de transpondeur sans contact correspondant. |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4132904A (en) | 1977-07-28 | 1979-01-02 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
US4467451A (en) | 1981-12-07 | 1984-08-21 | Hughes Aircraft Company | Nonvolatile random access memory cell |
US4980859A (en) | 1989-04-07 | 1990-12-25 | Xicor, Inc. | NOVRAM cell using two differential decouplable nonvolatile memory elements |
US5357463A (en) * | 1992-11-17 | 1994-10-18 | Micron Semiconductor, Inc. | Method for reverse programming of a flash EEPROM |
US5519663A (en) | 1994-09-28 | 1996-05-21 | Sci Systems, Inc. | Preservation system for volatile memory with nonvolatile backup memory |
US5602776A (en) * | 1994-10-17 | 1997-02-11 | Simtek Corporation | Non-Volatile, static random access memory with current limiting |
US6097629A (en) * | 1998-09-30 | 2000-08-01 | Simtek Corporation | Non-volatile, static random access memory with high speed store capability |
KR100686681B1 (ko) * | 1999-02-01 | 2007-02-27 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 집적 회로 및 불휘발성 기억 소자 |
US6414873B1 (en) * | 2001-03-16 | 2002-07-02 | Simtek Corporation | nvSRAM with multiple non-volatile memory cells for each SRAM memory cell |
US7663917B2 (en) * | 2003-06-17 | 2010-02-16 | Nxp B.V. | Non-volatile static memory cell |
US6961279B2 (en) * | 2004-03-10 | 2005-11-01 | Linear Technology Corporation | Floating gate nonvolatile memory circuits and methods |
US7164608B2 (en) | 2004-07-28 | 2007-01-16 | Aplus Flash Technology, Inc. | NVRAM memory cell architecture that integrates conventional SRAM and flash cells |
US20060193174A1 (en) * | 2005-02-25 | 2006-08-31 | O2Ic | Non-volatile and static random access memory cells sharing the same bitlines |
US8331150B2 (en) * | 2008-01-03 | 2012-12-11 | Aplus Flash Technology, Inc. | Integrated SRAM and FLOTOX EEPROM memory device |
US7639546B2 (en) * | 2008-02-26 | 2009-12-29 | Nscore Inc. | Nonvolatile memory utilizing MIS memory transistors with function to correct data reversal |
US8018768B2 (en) | 2009-08-18 | 2011-09-13 | United Microelectronics Corp. | Non-volatile static random access memory (NVSRAM) device |
US8964470B2 (en) * | 2012-09-25 | 2015-02-24 | Aplus Flash Technology, Inc. | Method and architecture for improving defect detectability, coupling area, and flexibility of NVSRAM cells and arrays |
US8971113B2 (en) * | 2012-10-30 | 2015-03-03 | Aplus Flash Technology, Inc. | Pseudo-8T NVSRAM cell with a charge-follower |
-
2013
- 2013-06-12 FR FR1355439A patent/FR3007185B1/fr not_active Expired - Fee Related
-
2014
- 2014-06-06 US US14/298,264 patent/US9245624B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR3007185A1 (fr) | 2014-12-19 |
US9245624B2 (en) | 2016-01-26 |
US20140369120A1 (en) | 2014-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR3007186B1 (fr) | Dispositif de memoire compact associant un plan memoire du type sram et un plan memoire du type non volatil, et procedes de fonctionnement | |
GB2522512B (en) | Method and device for managing a memory | |
FR3009420B1 (fr) | Dispositif a memoire, comprenant au moins un element spintronique et procede associe | |
EP2979270A4 (fr) | Interruption automatique et reprise automatique des opérations pour un dispositif à mémoire nand à puces multiples | |
TWI560809B (en) | Device including a dual port static random access memory cell and method for the formation thereof | |
FI20125779A (fi) | Laite, järjestely, menetelmä ja tietokoneohjelma massamuistiin tallennetun datan pyyhkimiseksi | |
FR3008219B1 (fr) | Dispositif a memoire non volatile | |
DK3017285T3 (da) | Fremgangsmåde samt anordning til fremstilling af en tablet | |
SG11201603147XA (en) | Device and method for determining a writing or reading mode | |
EP2955633A4 (fr) | Procédé et dispositif d'effacement de données pour une mémoire flash | |
FR3027450B1 (fr) | Dispositif memoire non volatile hybride et procede de fabrication d'un tel dispositif | |
GB201411023D0 (en) | Read assist techniques in a memory device | |
EP2954415A4 (fr) | Détection de tentatives d'altération et réaction à ces tentatives dans un dispositif mémoire | |
EP2985717A4 (fr) | Dispositif d'effacement de données, procédé d'effacement de données, programme, et support de stockage | |
PL3012835T3 (pl) | Urządzenie, sposób i program do analizy predykcji liniowej, oraz nośnik zapisu | |
GB2526648B (en) | Storing a computer program in program memory | |
EP2995907A4 (fr) | Dispositif de stockage de données cartographiques, procédé de mise à jour de données cartographiques et programme informatique | |
FR3001786B1 (fr) | Vanne de decharge et dispositif associe | |
FR3022393B1 (fr) | Dispositif de memoire vive resistive | |
EP3065057A4 (fr) | Dispositif de mémoire de données, procédé de mémoire de données et programme de mémoire de données | |
GB2546027B (en) | Method, device, and computer program for encapsulating partioned timed media data | |
FR3048809B1 (fr) | Cellule memoire sram comprenant un n-tfet et un p-tfet | |
FR3020712B1 (fr) | Compteur bidirectionnel en memoire flash | |
FR3007185B1 (fr) | Dispositif de memoire associant un plan-memoire du type sram et un plan-memoire du type non volatil, et procedes de fonctionnement | |
GB2517584B (en) | Memory access control in a memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
ST | Notification of lapse |
Effective date: 20210205 |