CN1216404C - 半导体器件的制造方法 - Google Patents

半导体器件的制造方法 Download PDF

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CN1216404C
CN1216404C CN011045167A CN01104516A CN1216404C CN 1216404 C CN1216404 C CN 1216404C CN 011045167 A CN011045167 A CN 011045167A CN 01104516 A CN01104516 A CN 01104516A CN 1216404 C CN1216404 C CN 1216404C
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山崎舜平
张宏勇
石原浩朗
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Semiconductor Energy Laboratory Co Ltd
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Abstract

一种制造半导体器件的方法，包括下列步骤：在整个衬底上制备半导体膜；制备具有垂直于激光束传播方向的截面的激光束；调节激光，使其在第一方向的截面增加，在垂直于所述第一方向的第二方向的截面减小；用调节过的激光束照射半导体膜；和改变半导体膜相对于调节过的激光束在第二方向的位置；激光束的调节包括：在第一方向扩大激光束的截面；在第一方向均匀化激光束的能量分布；在第二方向均匀化激光束的能量分布；在第二方向会聚激光束的截面。

Description

半导体器件的制造方法
技术领域
本发明涉及一种适于用在半导体器件成批生产中的、高生产率条件下能实现均匀退火的、高可靠的激光退火方法。更具体地说，本发明提供一种其晶性由于在诸如离子照射(ion irradiation)、离子注入和离子掺杂等工艺中受到损伤而严重地劣化的淀积薄膜的激光退火方法。
背景技术
如今，对降低制造半导体器件中的加工温度的方法正广泛地进行研究。对低温加工方法如此积极地研究的原因部分地归因于在例如玻璃制造的绝缘衬底上制备半导体器件所提出的要求。激光退火技术被认为是有前途的主要低温加工方法。
但是，激光退火的条件尚未确定，因为传统的激光退火方法是各自独立地在不同条件下进行的，这些条件取决于在每个方法中独立地选择的装置和涂敷条件。这就使得许多人错误地认为，激光退火技术不能给出可靠和一致得足以使该方法实际可行的结果。因此，本发明的目的在于首次建立能给出高度再现的结果的激光退火方法的条件。
在制造半导体器件的方法中，淀积薄膜极大地受到诸如离子照射、离子注入和离子掺杂等工艺过程的损伤，并由此在晶性方面遭到破坏，从而产生远非所说的半导体的非晶相或类似态。所以，为了将激光退火用于激活这种被损伤的薄膜，本发明人对如何使激光退火的条件最佳化进行了深入的研究。在该研究期间已发现，最佳条件的变化不仅受激光束的能量控制的影响，而且还受薄膜中所含有的杂质以及所加激光束的脉冲发射的次数的影响。
发明内容
采用本发明的方法激活的淀积薄膜是那些含有作为主要成份的周期表的IV族元素，例如硅、锗、硅和锗的合金，或IV族元素的化合物如碳化硅的淀积薄膜。所淀积的薄膜的厚度为100至10000。考虑到光传输，已完全确认，采用处于短波长范围的特别是400nm或更短波长的激光束能很好地实现这种薄膜的激光退火。
本发明的方法包括以下步骤：
将具有400nm或更短波长和50nsec或更窄脉宽的激光脉冲照射到薄膜上，该薄膜含有从碳、硅、锗、锡和铅所构成的组中选出的IV族元素以及掺入其中的杂质离子。
其中在所说激光脉冲到达所述含有IV族元素的薄膜的路程中，在所述含有IV族元素的薄膜上形成厚度为3至300nm的透明薄膜，所述激光脉冲的每一个的能量密度E以mJ/cm2为单位和所述激光脉冲数N满足关系式：log10N≤-0.02(E-350)。
从由KrF激发物激光器、ArF激发物激光器，XeCl激发物激光器和XeF激发物激光器构成的组中选出的一种激光器发射激光脉冲。杂质离子的掺入是采用离子照射、离子注入和离子掺杂等工艺实现的。含有IV族元素的薄膜形成在绝缘衬底上，并且该绝缘衬底在照射步骤期间被保持在室温至500℃的温度。
业已确认，采用具有足够高至激活的能量密度的激光束能降低薄层电阻。在含有作为杂质的磷的薄膜的情况下，这种趋势必然能观察到。然而，在含有作为杂质的硼的薄膜中，该薄膜由于这种高能量密度的激光的照射而受到损伤。此外，脉冲发射数的增加减少了激光退火薄膜的特性的波动被认为是理所当然的事。但是，这是不确切的，因为已经发现，由于增加发射数目使微观波动增强，涂层的结构劣化了。
这可解释为是由于重复加到薄膜上的激光束照射引起的涂层内的晶核生长所致。结果，在涂层内出现粒状大小在0.1至1μm尺寸范围内的分布，而该涂层以前是由均匀尺寸的晶粒所组成的。当采用高能激光照射时，此现象尤其明显。
业已发现，所淀积的薄膜(即半导体薄膜)必须涂敷(覆盖)3至300nm厚的光传输涂层，而不能暴露在大气中。从传输光束的观点看，该光传输涂层优先选用氧化硅或氮化硅制造。最好采用主要含有氧化硅的材料，因为通常它也可用作栅绝缘材料。元需说明，此光传输薄膜可以掺磷或硼，以钝化可移动离子。如果含有IV族元素的薄膜未涂敷这种光传输涂层，将会发生均匀性以加速方式被破坏的现象。
还已发现，在上述条件下并且又满足以下关系式时：
                 log10N≤A(E-B)
采用脉冲式激光束能获得更为光滑(均匀)的涂层，这里E(mJ/cm2)是所照射的每一激光脉冲的能量密度，N(发射数)是脉冲式激光的发射数目。A和B的值取决于掺入涂层中的杂质。当磷作为杂质存在时，选A为-0.02，B为350，当采用硼作为杂质时，选A为-0.02，B为300。
采用透明的衬底替代透明的薄膜能得到相似的结果。也就是说，按照本发明的激光加工方法包括以下步骤：
将杂质掺入在透明衬底上形成的半导体薄膜中；并且
将波长为400nm或更短和脉宽为50nsec或更窄的激光脉冲穿过所述透明衬底照射至所述半导体薄膜上；
其中，单位为mJ/cm2的所述激光脉冲的每一个的能量密度E和所述激光脉冲的数目N满足关系式：
              log10N≤-0.02(E-350)。
图7(A)示出掺入步骤，图7(B)示出照射步骤。参照数字71代表透明衬底，72代表半导体薄膜。
附图说明
以下是附图的简要说明。
图1是用于本发明的实施例中的激光退火装置的原理图；
图2是按照本发明的一个实施例由激光退火所获得的硅薄膜(掺磷，N型)的薄层电阻与所加的激光能量密度之间在改变脉冲发射的重复次数时的关系图；
图3是按照本发明的一个实施例由激光退火所获得的硅薄膜(掺磷和硼，P型)的薄层电阻与所加的激光能量密度之间在改变脉冲发射的重复次数时的关系图；
图4是在本发明的一个实施例中获得的硅薄膜的结构与所加的激光能量密度以及脉冲发射的重复次数之间的关系图；
图5为用于本发明的实施例中的激光退火装置的光学系统的原理图；
图6示出按照本发明的激光退火方法；和
图7示出按照本发明的另一种激光退火方法。
具体实施方式
下面参考非限制性实例，以更详细的方式描述本发明，不过，应当指出，不能将本发明解释成限于该实例。
在此实例中，将杂质掺入由IV族元素组成的薄膜中，以使其具有N型和P型导电的一种，将另一种杂质用掩模掺入该薄膜的一部分中，使所述部分具有N型和P型导电的其余一种。在图1中，原理性地示出了用于本实施的激光退火装置。激光束在发生器2中产生，在通过全反射镜5和6之后，在放大器3中被放大，并在通过全反射镜7和8之后被引入光学系统4 。初始激光束具有约3×2cm2的矩形束面积，但借助光学系统4被加工成长光束，其长约为10至30cm，宽约0.1至1cm。通过此光学系统的激光的最大能量密度为1000mJ/单发射。
光学系统4中的光路示于图5中。入射于光学系统4上的激光通过柱形凹透镜A、柱形凸透镜B、水平方向设置的蝇眼透镜C和垂直方向设置的蝇眼透镜D。依靠蝇眼透镜C和D，激光从初始的高斯分布变成矩形分布。接着，激光通过柱形凸透镜E和F，并在反射镜G(图1中反射镜9)上被反射，最后通过柱形透镜H聚焦在样品上。
在此实例中，图5所示的距离X1和X2是固定的，而虚焦点工(由蝇眼透镜的弯曲表面之间的差所产生)和反射镜G之间的距离X3、距离X4和X5是变化的，以便调节放大率M和焦距F。即：
            M＝(X3+X4)/X5
            1/F＝1/(X3+X4)+1/X5。
在此实例中，光路的总长度X5为约1.3m。
如以上所述，初始光束被改进成长形光束，以改善其加工性能。更准确地说，在离开光学系统之后，通过全反射镜9照射在样品11上的矩形光束与样品的宽度相比有更大的宽度，因此，样品仅需沿一个方向运动。所以，装载样品的平台和驱动装置10可以做成简单的结构，因此其维修工作能容易地完成。此外，在安装样品时调整工作也能大大地被简化。
另一方面，若采用方形横截面的光束，则由单个光束覆盖整个衬底将是不可能的。于是，样品应沿两个方向作两维运动。在此情况下，平台的驱动装置将变得复杂，同时调整也必须按二维的方式进行，这就带来许多的困难。特别是以手工方式进行调整时，此工序要耗费相当多的时间，从而大大地降低了整个工艺过程的生产率。此外，这些装置必须安装在象抗振工作台之类的稳固的工作台1上。
用在本实例中的样品是不同型号的玻璃衬底(例如，康宁(corning)#7059玻璃衬底)，其长度为100mm，宽度为100-300mm。在此加工方法中采用能发射248nm波长和50nsec或更窄脉宽的光的KrF激光器。
用等离子加速CVD(化学汽相淀积)工艺在玻璃衬底61上淀积100nm厚的非晶硅薄膜。所得到的薄膜在600℃下退火48小时，以获得结晶薄膜，并且所得到的薄膜被构图，以形成岛形部分62和63(图6(A))。进一步，用溅射法在上面淀积70nm厚的氧化硅薄膜(光传输涂层)64，并且衬底的整个表面用磷掺杂。在此步骤中采用通常所说的离子掺杂工艺(图6(B))，使用磷化氢(PH3)作为等离子源和80KV的加速电压。然后，将衬底的一部分65掩盖住，用离子掺杂工艺注入硼(图6(C))。在此步骤中采用乙硼烷(B2H6)作等离子源并在65KV电压下加速。更准确地说，通过光传输涂层，磷被注入(掺入)到所掩盖的部分，从而获得了具有N型导电的部分，而磷和硼通过光传输涂层被注入(掺入)到未掩盖的部分，结果形成具有P型导电的部分。
其后，在改变能量密度和脉冲发射的数目的同时，将激光束照射到岛形部分(半导体薄膜)上，以实现激光激活。对薄层电阻相应地进行测量，并通过光学显微镜观察构成涂层的晶体的结构。在图2至4中概括了得到的结果。
图2示出了用磷离子掺杂的硅薄膜的薄层电阻在改变脉冲发射的重复数时与激光束的能量密度的关系图。在2×1015cm-2的剂量下，将磷掺到硅薄膜中。采用在200mJ/cm2或更小的能量密度下运行的激光器，为激活薄层需要大量的发射数目，还会产生约10KΩ/sq。的高薄层电阻的不良结果。但是，采用具有200mJ/cm2或更高的能量密度的激光束，在1至10次发射的激光器运行条件下就可实现充分的激活。
图3示出在4×1015cm-2剂量下激光激活由硼离子掺杂的硅薄膜的结果。在此情况下，采用200mJ/cm2或更小的能量密度，只能进行不充分的激活，对于充分的激活而言，需要大的脉冲发射数目。采用运行在200至300mJ/cm2的能量密度的激光束，通过1至10次发射就得到足够低的薄层电阻。但是，从另一方面来说，采用运行在300mJ/cm2或更高的能量密度下的激光器，薄层电阻反而会增大。特别是，与采用200mJ/cm2或更低的激光束能量密度激活的情形相反，随着增加脉冲发射的重复次数，薄层电阻会增加。这个现象可解释成是由于薄膜的均匀性破坏使晶粒边界生长所造成的，而薄膜均匀性的破坏是因为采用太多发射数的激光照射所致。
在实际工艺中，激光退火同时用于P型和N型区，如图6(D)所示。这就意味着以350mJ/cm2的能量密度照射的激光束充分地激活N型区，但同时损害了P型区的性能。因此，在根据本实例的工艺中，激光优选工作在200至300mJ/cm2的能量密度范围内，最好在250至300mJ/cm2的范围内。脉冲重复数最好在1至100个脉冲的范围内。
如以上所述的那样，淀积薄膜的结构显著地受到激光退火的影响事实上，如图4所示，脉冲发射的数目能够与激光束能量密度和薄膜结构相联系。在图4中，用语“退火脉冲”是指激光束脉冲发射的数目。图中的实心圆代表在掺磷的硅上观察到表面结构变化的点，而空心圆代表在掺硼的硅上的相同情况。图的右侧上部区域相应于表面上出现不良结构(粗糙表面)的情况，而图的左侧下部区域相应于表面上出现良好结构(平滑表面)的情况。从该结果可以看出，掺磷的硅对激光照射具有强的耐性。因此，在不损伤表面结构的情况下进行激光退火的条件可以理解成是满足关系式：
                  log10N≤A(E-B)
这里，E(mJ/cm2)是所照射的激光束的能量密度，N(发射数)是脉冲式激光器的发射的数目。在磷作为杂质被掺入时，A和B的值是A＝-0.02，B＝350，而当硼作为杂质被掺入时，A＝-0.02，B＝300。
当淀积薄膜的结构受到相当大的损伤时，此特征值由于硅性能局部出现严重下降而呈现大的分散(Scattering)。事实上，在有缺陷的结构(粗糙表面)的硅薄膜上，观察到薄层电阻的分散高达20％或更多。通过满足以上的条件并将激光能量密度设定为适当的值，能够消除这种分散。
例如，当激光能量密度设定为250mJ/cm2时，脉冲式激光束以10次或更低的频率发射。如果能量密度提高到280mJ/cm2，激光束最好以1至3次的频率发射。通过在这种条件下激光退火，薄层电阻的变化可控制在10％或更小的范围内。
根据本发明，通过如前面所述的那样设定激光退火的最佳条件，获得了具有低的性能变化的高可靠半导体薄膜。因此可以看出，根据本发明的加工方法对半导体工业是有益的。
虽然参照特定实施例详细地描述了本发明，但很明显，对本领域的技术人员来说，在不脱离本发明的构思和范围的情况下，可进行各种变换和修改。

Claims (13)

1.一种制造半导体器件的方法，包括下列步骤：
在整个衬底上制备半导体膜；
制备具有垂直于激光束传播方向的截面的激光束；
调节激光束，使其在第一方向的截面增加，在垂直于所述第一方向的第二方向的截面减小；
用调节过的激光束照射半导体膜；
改变半导体膜相对于调节过的激光束在第二方向的相对位置；
其特征在于，激光束的调节包括：
只在第一方向均匀化激光束的能量的分布；
只在第二方向均匀化激光束的能量的分布。
2.如权利要求1所述方法，其特征在于，在所述均匀化步骤中，只在第一方向扩大激光束的截面。
3.如权利要求1所述的方法，其特征在于，所述均匀化步骤通过采用至少一个第一透镜阵列和一个第二透镜阵列进行，第一透镜阵列包括多个沿第一方向排列的柱面透镜，第二透镜阵列包括沿第二方向排列的多个第二柱面透镜。
4.如权利要求1所述的方法，其特征在于，激光束的调节通过采用至少一个第一透镜阵列、一个第一透镜、一个第二透镜阵列和一个第二透镜进行，第一透镜阵列包括沿第一方向排列的多个柱面透镜，第一透镜用于只在第一方向会聚激光束，第二透镜阵列包括沿第二方向排列的多个第二柱面透镜，第二透镜用于只在第二方向会聚激光束。
5.如权利要求1所述的方法，其特征在于，还包括如下步骤：由位于所述第二透镜阵列之前的一个扩展透镜只在第二方向扩展所述截面。
6.如权利要求1所述的方法，其特征在于，所述激光束为准分子激光。
7.如权利要求1所述的方法，其特征在于，所述激光束为脉动激光。
8.如权利要求1所述的方法，其特征在于，所述半导体膜包括硅。
9.如权利要求1所述的方法，其特征在于，它还包括在用激光束照射之前往所述半导体膜中加入磷离子的步骤。
10.如权利要求1所述的方法，其特征在于，它还包括在用激光束照射之前往所述半导体膜中加入硼离子的步骤。
11.如权利要求1所述的方法，其特征在于，在第一方向调节过的激光束的长度等于或大于10cm，并且在第二方向调节过的激光束的宽度等于或小于1cm。
12.如权利要求11所述的方法，其特征在于，在第一方向调节过的激光束的长度为10cm到30cm，并且在第二方向调节过的激光束的宽度为0.1cm到1cm。
13.一种制造半导体器件的方法，其特征在于，包括下列步骤：
在整个衬底上制备半导体膜；
制备具有垂直于激光束传播的方向的截面的激光束；
只在一个方向扩展激光束的截面；
在所述一个方向扩展截面之后，令激光束通过包括沿所述一个方向排列的多个柱面透镜的第一透镜阵列，从而只在所述一个方向调节激光束的能量分布；
调节能量分布之后，使激光束在所述一个方向会聚；然后
用激光束照射半导体膜。
CN011045167A 1992-06-26 2001-02-10 半导体器件的制造方法 Expired - Lifetime CN1216404C (zh)

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JP2007158376A (ja) 2007-06-21
CN1284742A (zh) 2001-02-21
CN1921069A (zh) 2007-02-28
US5858473A (en) 1999-01-12
US6002101A (en) 1999-12-14
US6440785B1 (en) 2002-08-27
US20060194377A1 (en) 2006-08-31
CN1921069B (zh) 2010-12-08
KR100261852B1 (ko) 2000-07-15
CN1414604A (zh) 2003-04-30
CN1214450C (zh) 2005-08-10
KR100203981B1 (ko) 1999-06-15
JP4602365B2 (ja) 2010-12-22
CN1076864C (zh) 2001-12-26
JPH06124913A (ja) 1994-05-06
KR0169872B1 (ko) 1999-10-01
JP4832566B2 (ja) 2011-12-07
CN1087750A (zh) 1994-06-08
JP2011223027A (ja) 2011-11-04
JP3708793B2 (ja) 2005-10-19
CN1350322A (zh) 2002-05-22
KR100261853B1 (ko) 2000-08-01
JP2001023921A (ja) 2001-01-26
JP2001044131A (ja) 2001-02-16
JP2001060562A (ja) 2001-03-06
CN1128193A (zh) 1996-08-07
CN1139105C (zh) 2004-02-18
KR940001496A (ko) 1994-01-11
US6991975B1 (en) 2006-01-31
CN1414615A (zh) 2003-04-30
JP2010045411A (ja) 2010-02-25
US5897799A (en) 1999-04-27
KR970005141B1 (ko) 1997-04-12
JP2000357667A (ja) 2000-12-26
JP2001015449A (ja) 2001-01-19
CN1108225C (zh) 2003-05-14
US7985635B2 (en) 2011-07-26

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