DE3784537T2 - Herstellungsverfahren einer niedergeschlagenen Schicht. - Google Patents

Herstellungsverfahren einer niedergeschlagenen Schicht.

Info

Publication number
DE3784537T2
DE3784537T2 DE87303225T DE3784537T DE3784537T2 DE 3784537 T2 DE3784537 T2 DE 3784537T2 DE 87303225 T DE87303225 T DE 87303225T DE 3784537 T DE3784537 T DE 3784537T DE 3784537 T2 DE3784537 T2 DE 3784537T2
Authority
DE
Germany
Prior art keywords
production process
deposited layer
deposited
layer
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87303225T
Other languages
English (en)
Other versions
DE3784537D1 (de
Inventor
Yutaka Hirai
Shigeru Shirai
Jinsho Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61083924A external-priority patent/JP2662388B2/ja
Priority claimed from JP8550886A external-priority patent/JPS62240767A/ja
Priority claimed from JP8550786A external-priority patent/JPH0639701B2/ja
Priority claimed from JP8682586A external-priority patent/JPS62243767A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3784537D1 publication Critical patent/DE3784537D1/de
Publication of DE3784537T2 publication Critical patent/DE3784537T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
DE87303225T 1986-04-11 1987-04-13 Herstellungsverfahren einer niedergeschlagenen Schicht. Expired - Fee Related DE3784537T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP61083924A JP2662388B2 (ja) 1986-04-11 1986-04-11 堆積膜形成法
JP8550886A JPS62240767A (ja) 1986-04-14 1986-04-14 堆積膜形成法
JP8550786A JPH0639701B2 (ja) 1986-04-14 1986-04-14 堆積膜形成法
JP8682586A JPS62243767A (ja) 1986-04-15 1986-04-15 堆積膜形成法

Publications (2)

Publication Number Publication Date
DE3784537D1 DE3784537D1 (de) 1993-04-15
DE3784537T2 true DE3784537T2 (de) 1993-09-30

Family

ID=27466894

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87303225T Expired - Fee Related DE3784537T2 (de) 1986-04-11 1987-04-13 Herstellungsverfahren einer niedergeschlagenen Schicht.

Country Status (3)

Country Link
US (1) US5591492A (de)
EP (1) EP0241317B1 (de)
DE (1) DE3784537T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5135607A (en) * 1986-04-11 1992-08-04 Canon Kabushiki Kaisha Process for forming deposited film
EP0241311B1 (de) * 1986-04-11 1993-03-17 Canon Kabushiki Kaisha Verfahren zur Herstellung einer niedergeschlagenen Schicht
JPH0639702B2 (ja) * 1986-04-14 1994-05-25 キヤノン株式会社 堆積膜形成法
DE3786364T2 (de) * 1986-04-14 1993-11-18 Canon Kk Verfahren zur Herstellung einer niedergeschlagenen Schicht.
JPH0639703B2 (ja) * 1986-04-15 1994-05-25 キヤノン株式会社 堆積膜形成法
US4883686A (en) * 1988-05-26 1989-11-28 Energy Conversion Devices, Inc. Method for the high rate plasma deposition of high quality material
US5122431A (en) * 1988-09-14 1992-06-16 Fujitsu Limited Thin film formation apparatus
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JP3765902B2 (ja) * 1997-02-19 2006-04-12 株式会社半導体エネルギー研究所 半導体装置の作製方法および電子デバイスの作製方法
US6149829A (en) * 1998-03-17 2000-11-21 James W. Mitzel Plasma surface treatment method and resulting device
NL1017849C2 (nl) * 2001-04-16 2002-10-30 Univ Eindhoven Tech Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat.
US6998305B2 (en) * 2003-01-24 2006-02-14 Asm America, Inc. Enhanced selectivity for epitaxial deposition
US7404858B2 (en) * 2005-09-16 2008-07-29 Mississippi State University Method for epitaxial growth of silicon carbide
US8125069B2 (en) * 2006-04-07 2012-02-28 Philtech Inc. Semiconductor device and etching apparatus
US20090102025A1 (en) * 2006-04-07 2009-04-23 Toshio Hayashi Semiconductor device and method for manufacturing the same, dry-etching process, method for making electrical connections, and etching apparatus
US8278176B2 (en) * 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US7759199B2 (en) * 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US8367528B2 (en) * 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461003A (en) * 1964-12-14 1969-08-12 Motorola Inc Method of fabricating a semiconductor structure with an electrically isolated region of semiconductor material
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4409605A (en) * 1978-03-16 1983-10-11 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4401687A (en) * 1981-11-12 1983-08-30 Advanced Semiconductor Materials America Plasma deposition of silicon
US4422897A (en) * 1982-05-25 1983-12-27 Massachusetts Institute Of Technology Process for selectively etching silicon
JPS5961124A (ja) * 1982-09-30 1984-04-07 Fujitsu Ltd 薄膜形成方法
US4521447A (en) * 1982-10-18 1985-06-04 Sovonics Solar Systems Method and apparatus for making layered amorphous semiconductor alloys using microwave energy
JPS59142839A (ja) * 1983-02-01 1984-08-16 Canon Inc 気相法装置のクリ−ニング方法
JPS59207631A (ja) * 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
JPH0622212B2 (ja) * 1983-05-31 1994-03-23 株式会社東芝 ドライエッチング方法
US4522662A (en) * 1983-08-12 1985-06-11 Hewlett-Packard Company CVD lateral epitaxial growth of silicon over insulators
DE3429899A1 (de) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo Verfahren zur bildung eines abscheidungsfilms
JPS6058616A (ja) * 1983-09-12 1985-04-04 Matsushita Electronics Corp 薄膜の成長方法
JPS60152023A (ja) * 1984-01-20 1985-08-10 Hitachi Ltd 光ｃｖｄ装置
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
JPS6126774A (ja) * 1984-07-16 1986-02-06 Canon Inc 非晶質シリコン膜形成装置
US4657777A (en) * 1984-12-17 1987-04-14 Canon Kabushiki Kaisha Formation of deposited film
US4615765A (en) * 1985-02-01 1986-10-07 General Electric Company Self-registered, thermal processing technique using a pulsed heat source
US4717585A (en) * 1985-02-09 1988-01-05 Canon Kabushiki Kaisha Process for forming deposited film
JPS61189626A (ja) * 1985-02-18 1986-08-23 Canon Inc 堆積膜形成法
US4728528A (en) * 1985-02-18 1988-03-01 Canon Kabushiki Kaisha Process for forming deposited film
US4726963A (en) * 1985-02-19 1988-02-23 Canon Kabushiki Kaisha Process for forming deposited film
US4778692A (en) * 1985-02-20 1988-10-18 Canon Kabushiki Kaisha Process for forming deposited film
US4637895A (en) * 1985-04-01 1987-01-20 Energy Conversion Devices, Inc. Gas mixtures for the vapor deposition of semiconductor material
JPS62228471A (ja) * 1986-03-31 1987-10-07 Canon Inc 堆積膜形成法
EP0241311B1 (de) * 1986-04-11 1993-03-17 Canon Kabushiki Kaisha Verfahren zur Herstellung einer niedergeschlagenen Schicht
DE3786364T2 (de) * 1986-04-14 1993-11-18 Canon Kk Verfahren zur Herstellung einer niedergeschlagenen Schicht.
US4918028A (en) * 1986-04-14 1990-04-17 Canon Kabushiki Kaisha Process for photo-assisted epitaxial growth using remote plasma with in-situ etching
JPH0639702B2 (ja) * 1986-04-14 1994-05-25 キヤノン株式会社 堆積膜形成法
JPH0639703B2 (ja) * 1986-04-15 1994-05-25 キヤノン株式会社 堆積膜形成法

Also Published As

Publication number Publication date
EP0241317A2 (de) 1987-10-14
EP0241317B1 (de) 1993-03-10
EP0241317A3 (en) 1989-02-08
DE3784537D1 (de) 1993-04-15
US5591492A (en) 1997-01-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee