DE3852510D1 - Verfahren zur Herstellung einer leitenden oder supraleitenden dünnen Schicht. - Google Patents

Verfahren zur Herstellung einer leitenden oder supraleitenden dünnen Schicht.

Info

Publication number
DE3852510D1
DE3852510D1 DE3852510T DE3852510T DE3852510D1 DE 3852510 D1 DE3852510 D1 DE 3852510D1 DE 3852510 T DE3852510 T DE 3852510T DE 3852510 T DE3852510 T DE 3852510T DE 3852510 D1 DE3852510 D1 DE 3852510D1
Authority
DE
Germany
Prior art keywords
conductive
producing
thin layer
superconducting thin
superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3852510T
Other languages
English (en)
Other versions
DE3852510T2 (de
Inventor
Hideomi Koinuma
Kazuo Fueki
Masashi Kawasaki
Shunroh Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Mineral Co Ltd
Original Assignee
Kawatetsu Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawatetsu Mining Co Ltd filed Critical Kawatetsu Mining Co Ltd
Publication of DE3852510D1 publication Critical patent/DE3852510D1/de
Application granted granted Critical
Publication of DE3852510T2 publication Critical patent/DE3852510T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0884—Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/816—Sputtering, including coating, forming, or etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Physical Vapour Deposition (AREA)
DE3852510T 1987-02-24 1988-02-24 Verfahren zur Herstellung einer leitenden oder supraleitenden dünnen Schicht. Expired - Fee Related DE3852510T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62039182A JPS63206462A (ja) 1987-02-24 1987-02-24 導電性又は超伝導性薄膜の製造方法

Publications (2)

Publication Number Publication Date
DE3852510D1 true DE3852510D1 (de) 1995-02-02
DE3852510T2 DE3852510T2 (de) 1995-08-03

Family

ID=12545969

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3852510T Expired - Fee Related DE3852510T2 (de) 1987-02-24 1988-02-24 Verfahren zur Herstellung einer leitenden oder supraleitenden dünnen Schicht.

Country Status (4)

Country Link
US (1) US4902671A (de)
EP (1) EP0280273B1 (de)
JP (1) JPS63206462A (de)
DE (1) DE3852510T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0277885B1 (de) * 1987-02-05 1993-12-22 Sumitomo Electric Industries Limited Verfahren zum Herstellen einer supraleitenden Dünnschicht
EP0284061A3 (de) * 1987-03-24 1989-08-16 Sumitomo Electric Industries Limited Supraleitendes Materialgemisch aus Oxidkeramik
JPS63242922A (ja) * 1987-03-30 1988-10-07 Sumitomo Electric Ind Ltd 超電導材料
JP2594271B2 (ja) * 1987-04-03 1997-03-26 松下電器産業株式会社 超電導体用薄膜の製造装置および超電導体用薄膜の製造方法
DE3815185A1 (de) * 1987-08-05 1989-02-16 Siemens Ag Verfahren zur herstellung einer hybridstruktur mit halbleitendem und supraleitendem material
US5174881A (en) * 1988-05-12 1992-12-29 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming a thin film on surface of semiconductor substrate
US5407867A (en) * 1988-05-12 1995-04-18 Mitsubishki Denki Kabushiki Kaisha Method of forming a thin film on surface of semiconductor substrate
JPH0455305A (ja) * 1990-06-20 1992-02-24 Sumitomo Electric Ind Ltd 超電導薄膜の作製方法
US5196400A (en) * 1990-08-17 1993-03-23 At&T Bell Laboratories High temperature superconductor deposition by sputtering
CA2053549A1 (en) * 1990-11-15 1992-05-16 John A. Agostinelli Construction of high temperature josephson junction device
DE4108001C1 (de) * 1991-03-13 1992-07-09 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
US6133050A (en) * 1992-10-23 2000-10-17 Symetrix Corporation UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue
US5395704A (en) * 1992-11-19 1995-03-07 North Western Univ. Technology Transfer Prog. Solid-oxide fuel cells
US5328582A (en) * 1992-12-04 1994-07-12 Honeywell Inc. Off-axis magnetron sputter deposition of mirrors
US6057038A (en) * 1996-08-02 2000-05-02 Sharp Kabushiki Kaisha Substrate for use in display element, method of manufacturing the same, and apparatus for manufacturing the same
WO2005035822A1 (en) * 2003-10-07 2005-04-21 Deposition Sciences, Inc. Apparatus and process for high rate deposition of rutile titanium dioxide

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126384A (en) * 1975-04-28 1976-11-04 Agency Of Ind Science & Technol A method of forming a thin film by sputtering
US4316785A (en) * 1979-11-05 1982-02-23 Nippon Telegraph & Telephone Public Corporation Oxide superconductor Josephson junction and fabrication method therefor
JPS5699979A (en) * 1980-01-11 1981-08-11 Hitachi Ltd Manufacture of super ionic conductive thin film
JPS5846198B2 (ja) * 1980-07-25 1983-10-14 日本電信電話株式会社 酸化物超伝導体ジョセフソン素子の製造方法
JPS6091504A (ja) * 1983-10-24 1985-05-22 日本電信電話株式会社 導電性酸化物薄膜の製造方法
EP0277885B1 (de) * 1987-02-05 1993-12-22 Sumitomo Electric Industries Limited Verfahren zum Herstellen einer supraleitenden Dünnschicht
JPH0696599A (ja) * 1992-02-26 1994-04-08 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
US4902671A (en) 1990-02-20
EP0280273A3 (en) 1990-05-09
JPS63206462A (ja) 1988-08-25
EP0280273B1 (de) 1994-12-21
DE3852510T2 (de) 1995-08-03
EP0280273A2 (de) 1988-08-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee