DE3789753D1 - Verfahren und Anordnung zur Herstellung einer dünnen Schicht. - Google Patents

Verfahren und Anordnung zur Herstellung einer dünnen Schicht.

Info

Publication number
DE3789753D1
DE3789753D1 DE3789753T DE3789753T DE3789753D1 DE 3789753 D1 DE3789753 D1 DE 3789753D1 DE 3789753 T DE3789753 T DE 3789753T DE 3789753 T DE3789753 T DE 3789753T DE 3789753 D1 DE3789753 D1 DE 3789753D1
Authority
DE
Germany
Prior art keywords
producing
arrangement
thin layer
thin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3789753T
Other languages
English (en)
Other versions
DE3789753T2 (de
Inventor
Hiroki C O Itami Seisakus Itoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5668687A external-priority patent/JPH0779085B2/ja
Priority claimed from JP62110613A external-priority patent/JPS63235468A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3789753D1 publication Critical patent/DE3789753D1/de
Publication of DE3789753T2 publication Critical patent/DE3789753T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE3789753T 1986-10-29 1987-10-27 Verfahren und Anordnung zur Herstellung einer dünnen Schicht. Expired - Fee Related DE3789753T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25584886 1986-10-29
JP5668687A JPH0779085B2 (ja) 1987-03-13 1987-03-13 化合物薄膜形成装置
JP62110613A JPS63235468A (ja) 1986-10-29 1987-05-08 薄膜形成方法およびその装置

Publications (2)

Publication Number Publication Date
DE3789753D1 true DE3789753D1 (de) 1994-06-09
DE3789753T2 DE3789753T2 (de) 1994-12-15

Family

ID=27295997

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789753T Expired - Fee Related DE3789753T2 (de) 1986-10-29 1987-10-27 Verfahren und Anordnung zur Herstellung einer dünnen Schicht.

Country Status (5)

Country Link
US (2) US4805555A (de)
EP (1) EP0266178B1 (de)
CN (1) CN1019513B (de)
CA (1) CA1308689C (de)
DE (1) DE3789753T2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4982696A (en) * 1988-01-08 1991-01-08 Ricoh Company, Ltd. Apparatus for forming thin film
JP2556364B2 (ja) * 1988-06-21 1996-11-20 アネルバ株式会社 真空蒸着装置
JPH0225577A (ja) * 1988-07-15 1990-01-29 Mitsubishi Electric Corp 薄膜形成装置
DE3824273A1 (de) * 1988-07-16 1990-01-18 Philips Patentverwaltung Verfahren zur herstellung von festkoerpern
JP2701363B2 (ja) * 1988-09-12 1998-01-21 三菱電機株式会社 半導体装置の製造方法及びそれに使用する薄膜形成装置
DE3832693A1 (de) * 1988-09-27 1990-03-29 Leybold Ag Vorrichtung zum aufbringen dielektrischer oder metallischer werkstoffe
FR2643087B1 (fr) * 1989-02-16 1991-06-07 Unirec Procede de depot d'un revetement de type ceramique sur un substrat metallique et element comportant un revetement obtenu par ce procede
US4951604A (en) * 1989-02-17 1990-08-28 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
JPH02278203A (ja) * 1989-04-19 1990-11-14 Adachi Shin Sangyo Kk 光学反射板
JP2619068B2 (ja) * 1989-09-08 1997-06-11 三菱電機株式会社 薄膜形成装置
EP0442681B1 (de) * 1990-02-13 1997-08-06 Yuasa Corporation Herstellungsverfahren für eine Elektrode und Herstellungsverfahren für eine Verbund-Elektrode-Elektrolyte
JPH03245523A (ja) * 1990-02-22 1991-11-01 Mitsubishi Electric Corp 量子井戸構造の製造方法
JPH03266803A (ja) * 1990-03-16 1991-11-27 Mitsubishi Electric Corp 短波長用ミラーの形成方法
JPH0452273A (ja) * 1990-06-18 1992-02-20 Mitsubishi Electric Corp 薄膜形成装置
JP2662321B2 (ja) * 1991-05-31 1997-10-08 科学技術振興事業団 超低速クラスターイオンビームによる表面処理方法
US5196102A (en) * 1991-08-08 1993-03-23 Microelectronics And Computer Technology Corporation Method and apparatus for applying a compound of a metal and a gas onto a surface
EP0551117A2 (de) * 1992-01-08 1993-07-14 Mitsubishi Denki Kabushiki Kaisha Hochintegrierte Schaltung sowie Verfahren zur Herstellung von einem dünnen Film und dazugehörige Einrichtung
US5350607A (en) * 1992-10-02 1994-09-27 United Technologies Corporation Ionized cluster beam deposition of sapphire
US5380683A (en) * 1992-10-02 1995-01-10 United Technologies Corporation Ionized cluster beam deposition of sapphire and silicon layers
JP3169151B2 (ja) * 1992-10-26 2001-05-21 三菱電機株式会社 薄膜形成装置
US5515169A (en) * 1993-10-13 1996-05-07 Labintelligence Inc. Spectral wavelength discrimination system and method for using
JPH0897147A (ja) * 1994-09-29 1996-04-12 Mitsubishi Electric Corp エピタキシャル結晶成長装置
US5593742A (en) * 1995-08-24 1997-01-14 The United States Of America As Represented By The Secretary Of The Army Fabrication of silicon microclusters and microfilaments
US5656091A (en) * 1995-11-02 1997-08-12 Vacuum Plating Technology Corporation Electric arc vapor deposition apparatus and method
KR0182373B1 (ko) * 1996-07-18 1999-04-01 박원훈 박막 증착 장치
US6452314B1 (en) 2000-01-05 2002-09-17 Honeywell International Inc. Spark plug having a protective titanium thereon, and methods of making the same
US6679976B2 (en) 2001-03-16 2004-01-20 4Wave, Inc. System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals
US6402904B1 (en) 2001-03-16 2002-06-11 4 Wave, Inc. System and method for performing sputter deposition using independent ion and electron sources and a target biased with an a-symmetric bi-polar DC pulse signal
JP2003013207A (ja) * 2001-06-29 2003-01-15 Nissan Motor Co Ltd 光吸収膜の形成方法および形成装置
JP4356113B2 (ja) * 2005-08-08 2009-11-04 セイコーエプソン株式会社 製膜方法、パターニング方法、光学装置の製造方法、および電子装置の製造方法
CN100467117C (zh) * 2005-09-05 2009-03-11 鸿富锦精密工业（深圳）有限公司 纳米粉体制备装置及制备方法
KR20090057093A (ko) * 2006-10-30 2009-06-03 닛뽄 고쿠 덴시 고교 가부시키가이샤 가스 클러스터 이온빔에 의한 고체 표면의 평탄화 방법 및 고체 표면 평탄화 장치
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
US8440165B2 (en) * 2007-03-29 2013-05-14 Npl Associates, Inc. Dislocation site density techniques
US8603405B2 (en) 2007-03-29 2013-12-10 Npl Associates, Inc. Power units based on dislocation site techniques
US8227020B1 (en) 2007-03-29 2012-07-24 Npl Associates, Inc. Dislocation site formation techniques
JP5815967B2 (ja) * 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
CN109355629B (zh) * 2018-11-27 2020-12-11 杭州科汀光学技术有限公司 一种薄膜滤光片的低温制备方法
CN112439582A (zh) * 2019-08-30 2021-03-05 长鑫存储技术有限公司 喷淋装置、半导体处理设备以及喷淋反应物的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123659A (en) * 1977-04-05 1978-10-28 Futaba Denshi Kogyo Kk Method of producing compound semiconductor wafer
JPS56137614A (en) * 1980-03-31 1981-10-27 Futaba Corp Manufacture of amorphous silicon coat

Also Published As

Publication number Publication date
EP0266178A3 (en) 1989-10-18
CA1308689C (en) 1992-10-13
DE3789753T2 (de) 1994-12-15
CN1019513B (zh) 1992-12-16
CN87107161A (zh) 1988-05-11
EP0266178A2 (de) 1988-05-04
US4805555A (en) 1989-02-21
EP0266178B1 (de) 1994-05-04
US4959242A (en) 1990-09-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee