DE69126949D1 - Verfahren zur Herstellung einer einkristallinen Schicht - Google Patents

Verfahren zur Herstellung einer einkristallinen Schicht

Info

Publication number
DE69126949D1
DE69126949D1 DE69126949T DE69126949T DE69126949D1 DE 69126949 D1 DE69126949 D1 DE 69126949D1 DE 69126949 T DE69126949 T DE 69126949T DE 69126949 T DE69126949 T DE 69126949T DE 69126949 D1 DE69126949 D1 DE 69126949D1
Authority
DE
Germany
Prior art keywords
producing
crystal layer
crystal
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69126949T
Other languages
English (en)
Other versions
DE69126949T2 (de
Inventor
Kenji Yamagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP30712990A external-priority patent/JP2786534B2/ja
Priority claimed from JP30713090A external-priority patent/JP2840434B2/ja
Priority claimed from JP41131190A external-priority patent/JPH04219392A/ja
Priority claimed from JP41130790A external-priority patent/JPH04219395A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69126949D1 publication Critical patent/DE69126949D1/de
Application granted granted Critical
Publication of DE69126949T2 publication Critical patent/DE69126949T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69126949T 1990-11-15 1991-11-14 Verfahren zur Herstellung einer einkristallinen Schicht Expired - Fee Related DE69126949T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP30712990A JP2786534B2 (ja) 1990-11-15 1990-11-15 結晶の形成方法
JP30713090A JP2840434B2 (ja) 1990-11-15 1990-11-15 結晶の形成方法
JP41131190A JPH04219392A (ja) 1990-12-18 1990-12-18 結晶の形成方法
JP41130790A JPH04219395A (ja) 1990-12-18 1990-12-18 結晶の形成方法

Publications (2)

Publication Number Publication Date
DE69126949D1 true DE69126949D1 (de) 1997-09-04
DE69126949T2 DE69126949T2 (de) 1998-02-12

Family

ID=27479932

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126949T Expired - Fee Related DE69126949T2 (de) 1990-11-15 1991-11-14 Verfahren zur Herstellung einer einkristallinen Schicht

Country Status (4)

Country Link
US (1) US5580381A (de)
EP (1) EP0486019B1 (de)
CA (1) CA2055400C (de)
DE (1) DE69126949T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719065A (en) * 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
JP3221473B2 (ja) 1994-02-03 2001-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5814529A (en) 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
US5976959A (en) * 1997-05-01 1999-11-02 Industrial Technology Research Institute Method for forming large area or selective area SOI
JP2000223419A (ja) * 1998-06-30 2000-08-11 Sony Corp 単結晶シリコン層の形成方法及び半導体装置の製造方法、並びに半導体装置
US6686978B2 (en) 2001-02-28 2004-02-03 Sharp Laboratories Of America, Inc. Method of forming an LCD with predominantly <100> polycrystalline silicon regions
US6664147B2 (en) * 2001-02-28 2003-12-16 Sharp Laboratories Of America, Inc. Method of forming thin film transistors on predominantly <100> polycrystalline silicon films
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
TWI270919B (en) 2002-04-15 2007-01-11 Semiconductor Energy Lab Display device and method of fabricating the same
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
KR100790869B1 (ko) * 2006-02-16 2008-01-03 삼성전자주식회사 단결정 기판 및 그 제조방법
US8059373B2 (en) * 2006-10-16 2011-11-15 Hitachi Global Storage Technologies Netherlands, B.V. EMR sensor and transistor formed on the same substrate
JP5171016B2 (ja) * 2006-10-27 2013-03-27 キヤノン株式会社 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
US10011920B2 (en) * 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration
US9059212B2 (en) 2012-10-31 2015-06-16 International Business Machines Corporation Back-end transistors with highly doped low-temperature contacts
US8912071B2 (en) 2012-12-06 2014-12-16 International Business Machines Corporation Selective emitter photovoltaic device
US8642378B1 (en) 2012-12-18 2014-02-04 International Business Machines Corporation Field-effect inter-digitated back contact photovoltaic device
US9306106B2 (en) 2012-12-18 2016-04-05 International Business Machines Corporation Monolithic integration of heterojunction solar cells
US9640699B2 (en) 2013-02-08 2017-05-02 International Business Machines Corporation Interdigitated back contact heterojunction photovoltaic device
US9859455B2 (en) 2013-02-08 2018-01-02 International Business Machines Corporation Interdigitated back contact heterojunction photovoltaic device with a floating junction front surface field
US10176991B1 (en) * 2017-07-06 2019-01-08 Wisconsin Alumni Research Foundation High-quality, single-crystalline silicon-germanium films

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3559005A (en) * 1966-10-24 1971-01-26 Texas Instruments Inc Integrated planar varactor diode
US4333792A (en) * 1977-01-03 1982-06-08 Massachusetts Institute Of Technology Enhancing epitaxy and preferred orientation
JPH0782996B2 (ja) * 1986-03-28 1995-09-06 キヤノン株式会社 結晶の形成方法
JP2654055B2 (ja) * 1987-02-28 1997-09-17 キヤノン株式会社 半導体基材の製造方法
CA1332039C (en) * 1987-03-26 1994-09-20 Takao Yonehara Ii - vi group compound crystal article and process for producing the same
JPH0810757B2 (ja) * 1987-05-25 1996-01-31 松下電子工業株式会社 半導体装置の製造方法
JPH01132117A (ja) * 1987-08-08 1989-05-24 Canon Inc 結晶の成長方法
EP0363100A3 (de) * 1988-10-02 1990-05-23 Canon Kabushiki Kaisha Selektives Polierverfahren
JP2603342B2 (ja) * 1988-10-02 1997-04-23 キヤノン株式会社 結晶物品及びその形成方法
JP2756320B2 (ja) * 1988-10-02 1998-05-25 キヤノン株式会社 結晶の形成方法

Also Published As

Publication number Publication date
EP0486019B1 (de) 1997-07-23
US5580381A (en) 1996-12-03
DE69126949T2 (de) 1998-02-12
CA2055400A1 (en) 1992-05-16
EP0486019A1 (de) 1992-05-20
CA2055400C (en) 1998-08-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee