DE3854828D1 - Verfahren zur Herstellung einer dünnen Schicht aus zusammengesetztem supraleitendem Oxyd - Google Patents

Verfahren zur Herstellung einer dünnen Schicht aus zusammengesetztem supraleitendem Oxyd

Info

Publication number
DE3854828D1
DE3854828D1 DE3854828T DE3854828T DE3854828D1 DE 3854828 D1 DE3854828 D1 DE 3854828D1 DE 3854828 T DE3854828 T DE 3854828T DE 3854828 T DE3854828 T DE 3854828T DE 3854828 D1 DE3854828 D1 DE 3854828D1
Authority
DE
Germany
Prior art keywords
producing
thin layer
superconducting oxide
composite superconducting
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3854828T
Other languages
English (en)
Other versions
DE3854828T2 (de
Inventor
Keizo Itami Works Harada
Naoji Itami Works Fujimori
Shuji Itami Works Yazu
Tetsuji Itami Works Jodai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE3854828D1 publication Critical patent/DE3854828D1/de
Application granted granted Critical
Publication of DE3854828T2 publication Critical patent/DE3854828T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0381—Processes for depositing or forming copper oxide superconductor layers by evaporation, e.g. MBE

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
DE3854828T 1987-08-24 1988-08-24 Verfahren zur Herstellung einer dünnen Schicht aus zusammengesetztem supraleitendem Oxyd Expired - Fee Related DE3854828T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20984187 1987-08-24

Publications (2)

Publication Number Publication Date
DE3854828D1 true DE3854828D1 (de) 1996-02-08
DE3854828T2 DE3854828T2 (de) 1996-08-22

Family

ID=16579508

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3854828T Expired - Fee Related DE3854828T2 (de) 1987-08-24 1988-08-24 Verfahren zur Herstellung einer dünnen Schicht aus zusammengesetztem supraleitendem Oxyd

Country Status (4)

Country Link
US (1) US5084265A (de)
EP (1) EP0305292B1 (de)
CA (1) CA1313335C (de)
DE (1) DE3854828T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01242496A (ja) * 1988-03-24 1989-09-27 Mitsubishi Metal Corp 酸化物系超伝導薄膜の製造方法
US5361720A (en) * 1988-04-22 1994-11-08 British Technology Group Ltd. Epitaxial deposition
ES2060622T3 (es) * 1988-06-03 1994-12-01 Ibm Metodo para la fabricacion de superconductores de elevada tc, que tienen estructura estratificada.
US5173474A (en) * 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
JPH04285012A (ja) * 1991-03-15 1992-10-09 Fujitsu Ltd 酸化物超伝導体薄膜の形成方法
EP0586774B1 (de) * 1992-09-11 1997-05-02 International Business Machines Corporation Verfahren zum Herstellen dünner Schichten durch Mehrlagen-Abscheidung
MXPA94009540A (es) * 1993-07-30 2005-04-29 Martin Marietta Energy Systems Procedimiento para hacer crecer una pelicula epitaxialmente sobre una superficie de oxido, y las estructuras formadas con el procedimiento.
FR2712429B1 (fr) * 1993-11-12 1996-01-26 Michel Jean Robert Lagues Materiau supraconducteur constitue de couches monomoleculaires superposees
JPH07263767A (ja) 1994-01-14 1995-10-13 Trw Inc イオンインプランテーションを用いたプレーナ型の高温超伝導集積回路
JPH07268612A (ja) * 1994-03-29 1995-10-17 Sumitomo Electric Ind Ltd 酸化物薄膜の作製方法
KR100192228B1 (ko) * 1995-08-04 1999-06-15 한갑수 주석 산화물 박막의 제조방법
US5830270A (en) * 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2265180A (en) * 1937-06-07 1941-12-09 Elektro Metallurg Appbau Ag Process for converting metals and the like
US2432856A (en) * 1945-06-09 1947-12-16 Westinghouse Electric Corp Method of purifying metal
CH311812A (de) * 1951-11-05 1955-12-15 Zeiss Carl Fa Aufdampfeinrichtung.
US2932588A (en) * 1955-07-06 1960-04-12 English Electric Valve Co Ltd Methods of manufacturing thin films of refractory dielectric materials
US3773499A (en) * 1968-04-03 1973-11-20 M Melnikov Method of zonal melting of materials
GB1488376A (en) * 1974-08-06 1977-10-12 Standard Telephones Cables Ltd Glass
JPS6037530B2 (ja) * 1980-05-29 1985-08-27 松下電器産業株式会社 磁気記録媒体の製造方法
US4488902A (en) * 1983-06-10 1984-12-18 Duval Corporation Horizontal, multistage electron beam refinement of metals with recycle
US4888202A (en) * 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film

Also Published As

Publication number Publication date
US5084265A (en) 1992-01-28
DE3854828T2 (de) 1996-08-22
CA1313335C (en) 1993-02-02
EP0305292A3 (en) 1990-10-03
EP0305292A2 (de) 1989-03-01
EP0305292B1 (de) 1995-12-27

Similar Documents

Publication Publication Date Title
DE3854208D1 (de) Verfahren zur Herstellung einer Schicht aus supraleitendem Oxidmaterial.
DE3886586D1 (de) Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Mischoxid.
DE3579621D1 (de) Verfahren zur herstellung einer duennen schicht aus diamant.
DE69308465D1 (de) Verfahren zur Herstellung einer dünnen Schicht aus einer Zusammensetzung des Typs Chalcopyrit
DE68914212T2 (de) Verfahren zur Herstellung einer Anordnung mit einer Schicht aus einem oxidischen supraleitenden Material.
DE3854828T2 (de) Verfahren zur Herstellung einer dünnen Schicht aus zusammengesetztem supraleitendem Oxyd
DE3852510T2 (de) Verfahren zur Herstellung einer leitenden oder supraleitenden dünnen Schicht.
DE3872430T2 (de) Verfahren zur herstellung einer schicht aus supraleitendem material.
DE69116399D1 (de) Verfahren zur Herstellung einer Schicht aus supraleitendem Oxyd
DE69118676D1 (de) Verfahren zur herstellung einer dünnen schicht aus hochtemperatur-supraleiteroxyd
DE69219191T2 (de) Verfahren zur Herstellung einer Dünnschicht aus supraleitender oxydischer Verbindung
DE69324085D1 (de) Verfahren zur Herstellung einer supraleitenden dünnen Oxydschicht
DE3886863D1 (de) Verfahren zur Herstellung einer supraleitenden Oxydschicht auf einem Substrat.
DE69108430D1 (de) Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Oxyd.
DE69328537T2 (de) Verfahren zur Herstellung einer supraleitenden Dünnschicht aus hoch-temperatur-supraleitenden-Oxid
DE69219192D1 (de) Verfahren zur Herstellung einer Schichtstruktur mit mindestens einer dünnen Schicht aus Supraleiteroxyd
DE3887765T2 (de) Verfahren zur Herstellung einer dicken supraleitenden Schicht.
DE3784756T2 (de) Verfahren zur Herstellung einer niedergeschlagenen Schicht.
DE69214064D1 (de) Verfahren zur Herstellung einer dünnen Schicht einer supraleitenden Oxid-Verbindung
DE3685732D1 (de) Verfahren zur herstellung einer monokristallinen duennen schicht.
DE69131611D1 (de) Verfahren zur Herstellung dünner Schichten aus Oxyd-Supraleiter
DE69004148T2 (de) Verfahren zur Herstellung einer oxydsupraleitenden Schicht.
DE69127425T2 (de) Prozess zur Herstellung einer dünnen supraleitenden Oxyd-Schicht
DE69030520T2 (de) Verfahren zur Herstellung einer supraleitenden Schicht
DE69030245T2 (de) Verfahren zur Herstellung eines Drahtes aus supraleitendem Oxyd

Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee