DE69324085D1 - Verfahren zur Herstellung einer supraleitenden dünnen Oxydschicht - Google Patents

Verfahren zur Herstellung einer supraleitenden dünnen Oxydschicht

Info

Publication number
DE69324085D1
DE69324085D1 DE69324085T DE69324085T DE69324085D1 DE 69324085 D1 DE69324085 D1 DE 69324085D1 DE 69324085 T DE69324085 T DE 69324085T DE 69324085 T DE69324085 T DE 69324085T DE 69324085 D1 DE69324085 D1 DE 69324085D1
Authority
DE
Germany
Prior art keywords
producing
oxide layer
thin oxide
superconducting thin
superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324085T
Other languages
English (en)
Other versions
DE69324085T2 (de
Inventor
Wataru Ito
Tadataka Morishita
Norio Homma
Yukihisa Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Superconductivity Technology Center
New Energy and Industrial Technology Development Organization
Original Assignee
Hokkaido Electric Power Co Inc
International Superconductivity Technology Center
Mitsubishi Electric Corp
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hokkaido Electric Power Co Inc, International Superconductivity Technology Center, Mitsubishi Electric Corp, Nippon Steel Corp filed Critical Hokkaido Electric Power Co Inc
Publication of DE69324085D1 publication Critical patent/DE69324085D1/de
Application granted granted Critical
Publication of DE69324085T2 publication Critical patent/DE69324085T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69324085T 1992-09-07 1993-09-06 Verfahren zur Herstellung einer supraleitenden dünnen Oxydschicht Expired - Fee Related DE69324085T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4238708A JP2905342B2 (ja) 1992-09-07 1992-09-07 ＹＢａ２Ｃｕ３Ｏｘ超電導薄膜の製造方法

Publications (2)

Publication Number Publication Date
DE69324085D1 true DE69324085D1 (de) 1999-04-29
DE69324085T2 DE69324085T2 (de) 1999-07-15

Family

ID=17034101

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324085T Expired - Fee Related DE69324085T2 (de) 1992-09-07 1993-09-06 Verfahren zur Herstellung einer supraleitenden dünnen Oxydschicht

Country Status (4)

Country Link
US (1) US5679625A (de)
EP (1) EP0587095B1 (de)
JP (1) JP2905342B2 (de)
DE (1) DE69324085T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715051A (ja) * 1993-06-24 1995-01-17 Mitsubishi Electric Corp Ｙｂｃｏ超電導薄膜の製造方法
DE10248962B4 (de) * 2002-10-21 2007-10-25 THEVA DüNNSCHICHTTECHNIK GMBH Verfahren zur Herstellung einer Hochtemperatur-Supraleiterschicht
JP4457566B2 (ja) * 2003-03-24 2010-04-28 パナソニック株式会社 スパッタリング方法
US7820020B2 (en) * 2005-02-03 2010-10-26 Applied Materials, Inc. Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
EP2644499B1 (de) * 2012-03-27 2014-03-19 Airbus Operations (S.A.S.) Flugzeugtürinstallation und Verfahren zum Gebrauch
RU2508576C1 (ru) * 2012-07-26 2014-02-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Поволжский государственный технологический университет Способ электроискрового формирования тонкопленочной втсп схемы
CN104651793A (zh) * 2015-03-19 2015-05-27 南通大学 一种多晶硅表面金属薄膜的制备装置及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62287071A (ja) * 1986-06-06 1987-12-12 Tadahiro Omi 薄膜の形成装置および形成方法
JPS6326361A (ja) * 1986-07-18 1988-02-03 Hitachi Ltd 薄膜形成方法および装置
DE3821207A1 (de) * 1988-06-23 1989-12-28 Leybold Ag Anordnung zum beschichten eines substrats mit dielektrika
JPH0313573A (ja) * 1989-06-10 1991-01-22 Ulvac Corp 誘電体膜の反応性スパッタ成膜法
JP2936276B2 (ja) * 1990-02-27 1999-08-23 日本真空技術株式会社 透明導電膜の製造方法およびその製造装置

Also Published As

Publication number Publication date
JP2905342B2 (ja) 1999-06-14
EP0587095B1 (de) 1999-03-24
US5679625A (en) 1997-10-21
EP0587095A2 (de) 1994-03-16
DE69324085T2 (de) 1999-07-15
JPH0688207A (ja) 1994-03-29
EP0587095A3 (en) 1996-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,

8327 Change in the person/name/address of the patent owner

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,

8327 Change in the person/name/address of the patent owner

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O

8339 Ceased/non-payment of the annual fee