DE69403104D1 - Verfahren zum Erzeugen einer strukturierten oxydsupraleitenden Dünnschicht - Google Patents

Verfahren zum Erzeugen einer strukturierten oxydsupraleitenden Dünnschicht

Info

Publication number
DE69403104D1
DE69403104D1 DE69403104T DE69403104T DE69403104D1 DE 69403104 D1 DE69403104 D1 DE 69403104D1 DE 69403104 T DE69403104 T DE 69403104T DE 69403104 T DE69403104 T DE 69403104T DE 69403104 D1 DE69403104 D1 DE 69403104D1
Authority
DE
Germany
Prior art keywords
producing
thin film
oxide superconducting
superconducting thin
structured oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69403104T
Other languages
English (en)
Other versions
DE69403104T2 (de
Inventor
So Tanaka
Takao Nakamura
Michitomo Iiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5121966A external-priority patent/JPH06310770A/ja
Priority claimed from JP5279091A external-priority patent/JP2853532B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69403104D1 publication Critical patent/DE69403104D1/de
Publication of DE69403104T2 publication Critical patent/DE69403104T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/728—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69403104T 1993-02-15 1994-02-14 Verfahren zum Erzeugen einer strukturierten oxydsupraleitenden Dünnschicht Expired - Fee Related DE69403104T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4861893 1993-02-15
JP5121966A JPH06310770A (ja) 1993-04-26 1993-04-26 絶縁体基板の微細加工方法
JP5279091A JP2853532B2 (ja) 1993-02-15 1993-10-12 絶縁領域と超電導領域とを有する超電導薄膜の作製方法

Publications (2)

Publication Number Publication Date
DE69403104D1 true DE69403104D1 (de) 1997-06-19
DE69403104T2 DE69403104T2 (de) 1997-10-30

Family

ID=27293353

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69403104T Expired - Fee Related DE69403104T2 (de) 1993-02-15 1994-02-14 Verfahren zum Erzeugen einer strukturierten oxydsupraleitenden Dünnschicht

Country Status (4)

Country Link
US (1) US5446016A (de)
EP (1) EP0612114B1 (de)
CA (1) CA2115716C (de)
DE (1) DE69403104T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100264006B1 (ko) * 1993-11-29 2000-08-16 이형도 고온초전도 조셉슨소자의 제조방법
DE19516608A1 (de) * 1995-05-10 1996-11-14 Forschungszentrum Juelich Gmbh HTSL-SQUID, sowie Verfahren zu seiner Herstellung
US6331680B1 (en) 1996-08-07 2001-12-18 Visteon Global Technologies, Inc. Multilayer electrical interconnection device and method of making same
JP3622147B2 (ja) * 2001-06-19 2005-02-23 独立行政法人産業技術総合研究所 柱状ピン止め中心を有する超伝導薄膜及びその製造方法
DE10136891B4 (de) * 2001-07-25 2004-07-22 Siemens Ag Verfahren zum Erzeugen eines flächenhaften Basismaterials aus Metall
JP4014432B2 (ja) * 2002-03-28 2007-11-28 ユーディナデバイス株式会社 インタディジタルキャパシタ及びその容量調整方法
US7637037B2 (en) * 2005-03-07 2009-12-29 David R. Sellers Detachable sole for an ankle and foot covering
IN2012DN00641A (de) * 2009-07-28 2015-08-21 Univ Houston System
US10157842B1 (en) * 2017-05-31 2018-12-18 International Business Machines Corporation Semiconductor device including superconducting metal through-silicon-vias and method of manufacturing the same
US10068184B1 (en) * 2017-10-27 2018-09-04 International Business Machines Corporation Vertical superconducting capacitors for transmon qubits
CN112117376A (zh) * 2020-09-24 2020-12-22 中国科学院微电子研究所 一种超导纳米线结构及其制备方法
CN112117375A (zh) * 2020-09-24 2020-12-22 中国科学院微电子研究所 一种超导纳米线结构及其制备方法
EP4033553A1 (de) * 2021-01-26 2022-07-27 IQM Finland Oy Supraleiterübergangsbauelement und dessen herstellung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2624690B2 (ja) * 1987-07-03 1997-06-25 株式会社日立製作所 酸化物超電導装置およびその製造方法
JPS6469064A (en) * 1987-09-10 1989-03-15 Nec Corp Manufacture of oxide superconducting wiring
JPH01241874A (ja) * 1988-03-23 1989-09-26 Mitsubishi Electric Corp ジョゼフソン接合素子
US5135908A (en) * 1989-08-07 1992-08-04 The Trustees Of Columbia University In The City Of New York Method of patterning superconducting films
US5196395A (en) * 1991-03-04 1993-03-23 Superconductor Technologies, Inc. Method for producing crystallographic boundary junctions in oxide superconducting thin films
CA2062709C (en) * 1991-03-11 1997-06-24 So Tanaka Superconducting thin film having at least one isolated superconducting region formed of oxide superconductor material and method for manufacturing the same
WO1993000708A1 (de) * 1991-06-24 1993-01-07 Forschungszentrum Jülich GmbH Strukturierte leiterbahnen und verfahren zur herstellung derselben

Also Published As

Publication number Publication date
US5446016A (en) 1995-08-29
CA2115716A1 (en) 1994-08-16
DE69403104T2 (de) 1997-10-30
EP0612114A3 (de) 1995-11-29
EP0612114B1 (de) 1997-05-14
CA2115716C (en) 1997-11-04
EP0612114A2 (de) 1994-08-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee