DE69219191D1 - Verfahren zur Herstellung einer Dünnschicht aus supraleitender oxydischer Verbindung - Google Patents
Verfahren zur Herstellung einer Dünnschicht aus supraleitender oxydischer VerbindungInfo
- Publication number
- DE69219191D1 DE69219191D1 DE69219191T DE69219191T DE69219191D1 DE 69219191 D1 DE69219191 D1 DE 69219191D1 DE 69219191 T DE69219191 T DE 69219191T DE 69219191 T DE69219191 T DE 69219191T DE 69219191 D1 DE69219191 D1 DE 69219191D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- thin layer
- oxidic compound
- superconducting oxidic
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000001875 compounds Chemical class 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/702—Josephson junction present
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/731—Sputter coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3087917A JPH04300292A (ja) | 1991-03-26 | 1991-03-26 | 複合酸化物超電導薄膜の成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69219191D1 true DE69219191D1 (de) | 1997-05-28 |
DE69219191T2 DE69219191T2 (de) | 1997-11-06 |
Family
ID=13928277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69219191T Expired - Fee Related DE69219191T2 (de) | 1991-03-26 | 1992-03-26 | Verfahren zur Herstellung einer Dünnschicht aus supraleitender oxydischer Verbindung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5225398A (de) |
EP (1) | EP0506570B1 (de) |
JP (1) | JPH04300292A (de) |
CA (1) | CA2064169C (de) |
DE (1) | DE69219191T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69218388T2 (de) * | 1991-12-10 | 1997-10-23 | Sumitomo Electric Industries | Supraleitendes Bauelement mit extrem dünnem Kanal aus supraleitendem Oxyd und sein Herstellungsverfahren |
JPH05251777A (ja) * | 1991-12-13 | 1993-09-28 | Sumitomo Electric Ind Ltd | 超電導電界効果型素子およびその作製方法 |
US5776863A (en) * | 1996-07-08 | 1998-07-07 | Trw Inc. | In-situ fabrication of a superconductor hetero-epitaxial Josephson junction |
JP4041672B2 (ja) * | 1999-07-23 | 2008-01-30 | アメリカン スーパーコンダクター コーポレイション | 接合高温超伝導性被覆テープ |
WO2011065210A1 (en) * | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
KR102304078B1 (ko) | 2009-11-28 | 2021-09-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR101825345B1 (ko) * | 2009-11-28 | 2018-02-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 적층 산화물 재료, 반도체 장치 및 반도체 장치의 제작 방법 |
KR101878206B1 (ko) * | 2010-03-05 | 2018-07-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법 |
TWI562379B (en) | 2010-11-30 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing semiconductor device |
JP6212741B2 (ja) * | 2013-03-01 | 2017-10-18 | 株式会社ユーテック | 配向基板 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04214097A (ja) * | 1990-12-13 | 1992-08-05 | Sumitomo Electric Ind Ltd | 超電導薄膜の作製方法 |
EP0502787B1 (de) * | 1991-03-04 | 1996-08-14 | Sumitomo Electric Industries, Ltd. | Supraleitende oxydische Dünnschicht mit lokal unterschiedlichen Kristallorientierungen und ein Verfahren zu deren Herstellung |
US5157466A (en) * | 1991-03-19 | 1992-10-20 | Conductus, Inc. | Grain boundary junctions in high temperature superconductor films |
-
1991
- 1991-03-26 JP JP3087917A patent/JPH04300292A/ja not_active Withdrawn
-
1992
- 1992-03-26 CA CA002064169A patent/CA2064169C/en not_active Expired - Fee Related
- 1992-03-26 EP EP92400851A patent/EP0506570B1/de not_active Expired - Lifetime
- 1992-03-26 DE DE69219191T patent/DE69219191T2/de not_active Expired - Fee Related
- 1992-03-26 US US07/857,550 patent/US5225398A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69219191T2 (de) | 1997-11-06 |
JPH04300292A (ja) | 1992-10-23 |
CA2064169A1 (en) | 1992-09-27 |
US5225398A (en) | 1993-07-06 |
CA2064169C (en) | 1998-07-07 |
EP0506570A2 (de) | 1992-09-30 |
EP0506570A3 (en) | 1993-01-27 |
EP0506570B1 (de) | 1997-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |