DE3886586D1 - Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Mischoxid. - Google Patents

Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Mischoxid.

Info

Publication number
DE3886586D1
DE3886586D1 DE88108406T DE3886586T DE3886586D1 DE 3886586 D1 DE3886586 D1 DE 3886586D1 DE 88108406 T DE88108406 T DE 88108406T DE 3886586 T DE3886586 T DE 3886586T DE 3886586 D1 DE3886586 D1 DE 3886586D1
Authority
DE
Germany
Prior art keywords
producing
thin layer
mixed oxide
superconducting mixed
superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88108406T
Other languages
English (en)
Other versions
DE3886586T2 (de
Inventor
Nobuhiko Itami Works Of Fujita
Hideo Itami Works Of S Itozaki
Saburo Itami Works Of S Tanaka
Shuji Itami Works Of Sumi Yazu
Tetsuji Itami Works Of S Jodai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3886586D1 publication Critical patent/DE3886586D1/de
Publication of DE3886586T2 publication Critical patent/DE3886586T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0381—Processes for depositing or forming copper oxide superconductor layers by evaporation, e.g. MBE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0884—Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE88108406T 1987-05-26 1988-05-25 Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Mischoxid. Expired - Fee Related DE3886586T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12877387 1987-05-26

Publications (2)

Publication Number Publication Date
DE3886586D1 true DE3886586D1 (de) 1994-02-10
DE3886586T2 DE3886586T2 (de) 1994-04-28

Family

ID=14993113

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88108406T Expired - Fee Related DE3886586T2 (de) 1987-05-26 1988-05-25 Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Mischoxid.

Country Status (4)

Country Link
US (1) US4925829A (de)
EP (1) EP0292958B1 (de)
DE (1) DE3886586T2 (de)
HK (1) HK2196A (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910007382B1 (ko) * 1987-08-07 1991-09-25 가부시기가이샤 히다찌세이사꾸쇼 초전도 재료 및 초전도 박막의 제조방법
US5232909A (en) * 1987-08-20 1993-08-03 Sumitomo Electric Industries, Ltd. Method for manufacturing superconducting ceramics elongated body
JP2557486B2 (ja) * 1987-08-20 1996-11-27 住友電気工業株式会社 超電導セラミックス長尺体の製造方法および超電導セラミックス長尺体
US5273954A (en) * 1987-08-20 1993-12-28 Fukami Patent Office Method for forming superconducting ceramics elongated body
DE68922734T2 (de) * 1988-03-16 1995-09-14 Toshiba Kawasaki Kk VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS.
JPH0286014A (ja) * 1988-06-17 1990-03-27 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜と、その成膜方法
JPH02260674A (ja) * 1989-03-31 1990-10-23 Sumitomo Electric Ind Ltd トンネル型ジョセフソン素子とその作製方法
US5480534A (en) * 1990-08-22 1996-01-02 Toa Electronics Ltd. Electrode for measuring PH
CA2053549A1 (en) * 1990-11-15 1992-05-16 John A. Agostinelli Construction of high temperature josephson junction device
US5962866A (en) * 1991-01-22 1999-10-05 Biomagnetic Technologies, Inc. Microbridge superconductor device utilizing stepped junctions
US5134117A (en) * 1991-01-22 1992-07-28 Biomagnetic Technologies, Inc. High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction
JPH04285012A (ja) * 1991-03-15 1992-10-09 Fujitsu Ltd 酸化物超伝導体薄膜の形成方法
WO1995002709A2 (en) * 1993-07-15 1995-01-26 President And Fellows Of Harvard College EXTENDED NITRIDE MATERIAL COMPRISING β-C3N¿4?
DE69430230T2 (de) * 1993-10-14 2002-10-31 Mega Chips Corp., Osaka Verfahren und Vorrichtung zur Herstellung eines Einkristallinen dünnen Films
US8182862B2 (en) * 2003-06-05 2012-05-22 Superpower Inc. Ion beam-assisted high-temperature superconductor (HTS) deposition for thick film tape
US20040261707A1 (en) * 2003-06-26 2004-12-30 Venkat Selvamanickam Apparatus for and method of cooling and positioning a translating substrate tape for use with a continuous vapor deposition process
US7758699B2 (en) * 2003-06-26 2010-07-20 Superpower, Inc. Apparatus for and method of continuous HTS tape buffer layer deposition using large scale ion beam assisted deposition
KR20060081015A (ko) * 2005-01-06 2006-07-12 삼성에스디아이 주식회사 진공 증착기
EP1967312A1 (de) * 2007-03-06 2008-09-10 Siemens Aktiengesellschaft Verfahren zur Lötreparatur eines Bauteils unter Vakuum und einem eingestellten Sauerstoffpartialdruck
CN113470883B (zh) * 2021-06-29 2022-11-11 南京大学 具有高临界参数无毒铜氧化物超导体及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565358A (en) * 1978-11-10 1980-05-16 Nippon Kogaku Kk <Nikon> Forming method for titanium dioxide by normal temperature reaction evaporation
JPS6115967A (ja) * 1984-06-29 1986-01-24 Sumitomo Electric Ind Ltd 表面処理方法
US4888202A (en) * 1986-07-31 1989-12-19 Nippon Telegraph And Telephone Corporation Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film
JP2711253B2 (ja) * 1987-03-18 1998-02-10 インターナショナル・ビジネス・マシーンズ・コーポレーション 超伝導膜及びその形成方法
CA1332324C (en) * 1987-03-30 1994-10-11 Jun Shioya Method for producing thin film of oxide superconductor
EP0288001B1 (de) * 1987-04-20 1993-01-13 Nissin Electric Company, Limited Verfahren zur Herstellung einer supraleitenden dünnen Schicht und Anordnung zu seiner Durchführung
CA1328242C (en) * 1987-05-18 1994-04-05 Nobuhiko Fujita Process for manufacturing a superconductor and a method for producing a superconducting circuit

Also Published As

Publication number Publication date
EP0292958A3 (en) 1989-10-11
EP0292958A2 (de) 1988-11-30
HK2196A (en) 1996-01-12
EP0292958B1 (de) 1993-12-29
US4925829A (en) 1990-05-15
DE3886586T2 (de) 1994-04-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee