DE3853905D1 - Verfahren zur Herstellung monokristalliner dünner Schichten aus LnA2Cu307-x mit einer Perovskit-Struktur mit 3 Ebenen. - Google Patents

Verfahren zur Herstellung monokristalliner dünner Schichten aus LnA2Cu307-x mit einer Perovskit-Struktur mit 3 Ebenen.

Info

Publication number
DE3853905D1
DE3853905D1 DE3853905T DE3853905T DE3853905D1 DE 3853905 D1 DE3853905 D1 DE 3853905D1 DE 3853905 T DE3853905 T DE 3853905T DE 3853905 T DE3853905 T DE 3853905T DE 3853905 D1 DE3853905 D1 DE 3853905D1
Authority
DE
Germany
Prior art keywords
lna2cu307
levels
production
thin layers
perovskite structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3853905T
Other languages
English (en)
Other versions
DE3853905T2 (de
Inventor
Toshio Takada
Takahito Terashima
Yoshichika Bando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
NEC Corp
Nippon Steel Corp
TDK Corp
Tosoh Corp
Toyobo Co Ltd
Zaidan Hojin Seisan Kaihatsu Kenkyusho
Eneos Corp
Panasonic Holdings Corp
Ube Corp
Original Assignee
Japan Energy Corp
Kanegafuchi Chemical Industry Co Ltd
NEC Corp
Nippon Steel Corp
TDK Corp
Tosoh Corp
Toyobo Co Ltd
Ube Industries Ltd
Zaidan Hojin Seisan Kaihatsu Kenkyusho
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63075486A external-priority patent/JP2704625B2/ja
Application filed by Japan Energy Corp, Kanegafuchi Chemical Industry Co Ltd, NEC Corp, Nippon Steel Corp, TDK Corp, Tosoh Corp, Toyobo Co Ltd, Ube Industries Ltd, Zaidan Hojin Seisan Kaihatsu Kenkyusho, Matsushita Electric Industrial Co Ltd filed Critical Japan Energy Corp
Publication of DE3853905D1 publication Critical patent/DE3853905D1/de
Application granted granted Critical
Publication of DE3853905T2 publication Critical patent/DE3853905T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
DE3853905T 1987-09-21 1988-09-20 Verfahren zur Herstellung monokristalliner dünner Schichten aus LnA2Cu307-x mit einer Perovskit-Struktur mit 3 Ebenen. Expired - Fee Related DE3853905T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP23679287 1987-09-21
JP23679387 1987-09-21
JP31467087 1987-12-11
JP31807487 1987-12-15
JP3363088 1988-02-15
JP5720788 1988-03-10
JP63075486A JP2704625B2 (ja) 1987-09-21 1988-03-28 三層ペロブスカイト構造をもつＬｎＡ▲下２▼Ｃｕ▲下３▼Ｏ▲下７▼−ｘの単結晶薄膜及びＬｎＡ▲下２▼Ｃｕ▲下３▼Ｏ▲下７▼−ｘ薄膜の製造法

Publications (2)

Publication Number Publication Date
DE3853905D1 true DE3853905D1 (de) 1995-07-06
DE3853905T2 DE3853905T2 (de) 1995-10-12

Family

ID=27564353

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853905T Expired - Fee Related DE3853905T2 (de) 1987-09-21 1988-09-20 Verfahren zur Herstellung monokristalliner dünner Schichten aus LnA2Cu307-x mit einer Perovskit-Struktur mit 3 Ebenen.

Country Status (3)

Country Link
EP (1) EP0308869B1 (de)
CA (1) CA1322514C (de)
DE (1) DE3853905T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2896193B2 (ja) * 1989-07-27 1999-05-31 株式会社東芝 酸化物結晶配向膜の製造方法及び酸化物結晶配向膜並びに光磁気記録媒体
EP0410627A1 (de) * 1989-07-27 1991-01-30 Kabushiki Kaisha Toshiba Oxidfilm mit bevorzugter Kristallausrichtung, Verfahren zu dessen Herstellung und magnetooptisches Aufzeichnungsmaterial
JPH11186623A (ja) * 1997-12-25 1999-07-09 Sumitomo Electric Ind Ltd 磁気センサ
US6436317B1 (en) 1999-05-28 2002-08-20 American Superconductor Corporation Oxide bronze compositions and textured articles manufactured in accordance therewith
JP4041672B2 (ja) 1999-07-23 2008-01-30 アメリカン スーパーコンダクター コーポレイション 接合高温超伝導性被覆テープ
US6828507B1 (en) 1999-07-23 2004-12-07 American Superconductor Corporation Enhanced high temperature coated superconductors joined at a cap layer
US6562761B1 (en) 2000-02-09 2003-05-13 American Superconductor Corporation Coated conductor thick film precursor
US6765151B2 (en) 1999-07-23 2004-07-20 American Superconductor Corporation Enhanced high temperature coated superconductors
WO2001015245A1 (en) 1999-08-24 2001-03-01 Electric Power Research Institute, Inc. Surface control alloy substrates and methods of manufacture therefor
US6974501B1 (en) 1999-11-18 2005-12-13 American Superconductor Corporation Multi-layer articles and methods of making same
US6673387B1 (en) 2000-07-14 2004-01-06 American Superconductor Corporation Control of oxide layer reaction rates
US20020056401A1 (en) 2000-10-23 2002-05-16 Rupich Martin W. Precursor solutions and methods of using same

Also Published As

Publication number Publication date
EP0308869A2 (de) 1989-03-29
DE3853905T2 (de) 1995-10-12
CA1322514C (en) 1993-09-28
EP0308869A3 (en) 1990-10-31
EP0308869B1 (de) 1995-05-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee