DE69219191T2 - Verfahren zur Herstellung einer Dünnschicht aus supraleitender oxydischer Verbindung - Google Patents

Verfahren zur Herstellung einer Dünnschicht aus supraleitender oxydischer Verbindung

Info

Publication number
DE69219191T2
DE69219191T2 DE69219191T DE69219191T DE69219191T2 DE 69219191 T2 DE69219191 T2 DE 69219191T2 DE 69219191 T DE69219191 T DE 69219191T DE 69219191 T DE69219191 T DE 69219191T DE 69219191 T2 DE69219191 T2 DE 69219191T2
Authority
DE
Germany
Prior art keywords
producing
thin layer
oxidic compound
superconducting oxidic
superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69219191T
Other languages
English (en)
Other versions
DE69219191D1 (de
Inventor
Hidenori Nakanishi
Shin-Ichi Shikata
Hideo Itozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69219191D1 publication Critical patent/DE69219191D1/de
Publication of DE69219191T2 publication Critical patent/DE69219191T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632Intermediate layers, e.g. for growth control
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/70High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701Coated or thin film device, i.e. active or passive
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/70High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701Coated or thin film device, i.e. active or passive
    • Y10S505/702Josephson junction present
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/725Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73Vacuum treating or coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/725Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73Vacuum treating or coating
    • Y10S505/731Sputter coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
DE69219191T 1991-03-26 1992-03-26 Verfahren zur Herstellung einer Dünnschicht aus supraleitender oxydischer Verbindung Expired - Fee Related DE69219191T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3087917A JPH04300292A (ja) 1991-03-26 1991-03-26 複合酸化物超電導薄膜の成膜方法

Publications (2)

Publication Number Publication Date
DE69219191D1 DE69219191D1 (de) 1997-05-28
DE69219191T2 true DE69219191T2 (de) 1997-11-06

Family

ID=13928277

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69219191T Expired - Fee Related DE69219191T2 (de) 1991-03-26 1992-03-26 Verfahren zur Herstellung einer Dünnschicht aus supraleitender oxydischer Verbindung

Country Status (5)

Country Link
US (1) US5225398A (de)
EP (1) EP0506570B1 (de)
JP (1) JPH04300292A (de)
CA (1) CA2064169C (de)
DE (1) DE69219191T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0551033B1 (de) * 1991-12-10 1997-03-19 Sumitomo Electric Industries, Ltd. Supraleitendes Bauelement mit extrem dünnem Kanal aus supraleitendem Oxyd und sein Herstellungsverfahren
JPH05251777A (ja) * 1991-12-13 1993-09-28 Sumitomo Electric Ind Ltd 超電導電界効果型素子およびその作製方法
US5776863A (en) * 1996-07-08 1998-07-07 Trw Inc. In-situ fabrication of a superconductor hetero-epitaxial Josephson junction
EP1198849A2 (de) * 1999-07-23 2002-04-24 American Superconductor Corporation Oberflächenbehandlungsprozess zur herstellung von vielschichtbauteilen
WO2011065210A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
CN102668028B (zh) 2009-11-28 2015-09-02 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
KR102089200B1 (ko) 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101878206B1 (ko) * 2010-03-05 2018-07-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
JP6212741B2 (ja) * 2013-03-01 2017-10-18 株式会社ユーテック 配向基板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04214097A (ja) * 1990-12-13 1992-08-05 Sumitomo Electric Ind Ltd 超電導薄膜の作製方法
CA2062294C (en) * 1991-03-04 1997-01-14 Hiroshi Inada Thin film of oxide superconductor possessing locally different crystal orientations and processes for preparing the same
US5157466A (en) * 1991-03-19 1992-10-20 Conductus, Inc. Grain boundary junctions in high temperature superconductor films

Also Published As

Publication number Publication date
EP0506570A3 (en) 1993-01-27
CA2064169C (en) 1998-07-07
US5225398A (en) 1993-07-06
DE69219191D1 (de) 1997-05-28
JPH04300292A (ja) 1992-10-23
EP0506570B1 (de) 1997-04-23
CA2064169A1 (en) 1992-09-27
EP0506570A2 (de) 1992-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee