ES2060622T3 - Metodo para la fabricacion de superconductores de elevada tc, que tienen estructura estratificada. - Google Patents
Metodo para la fabricacion de superconductores de elevada tc, que tienen estructura estratificada.Info
- Publication number
- ES2060622T3 ES2060622T3 ES88108908T ES88108908T ES2060622T3 ES 2060622 T3 ES2060622 T3 ES 2060622T3 ES 88108908 T ES88108908 T ES 88108908T ES 88108908 T ES88108908 T ES 88108908T ES 2060622 T3 ES2060622 T3 ES 2060622T3
- Authority
- ES
- Spain
- Prior art keywords
- inlets
- superconductors
- elevated
- manufacture
- constituent components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/68—Crystals with laminate structure, e.g. "superlattices"
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming superconductor layers
- H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
- H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic materials
- H10N60/857—Ceramic materials comprising copper oxide
Abstract
ESTE ES UN METODO PARA FABRICAR ESTRUCTURAS LAMINADAS DE COMPONENTES ARTIFICIALES SUPERCONDUCTORES DE ALTA-TC CUYA PARTE SUPERIOR DE CRISTAL EN GRANO (7) TIENE UNA ESTRUCTURA ENREJADA DEL COMPONENTE SUPERCONDUCTOR PARA SER FABRICADA, LAMINAS DE OXIDO (4, 5, 6) DE TODOS LOS COMPONENTES CONSTITUYENTES SON EPITAXIALMENTE CRECIDAS EN UNA PREDETERMINADA SECUENCIA ASI COMO PARA CREAR UNA ESTRUCTURA SANDWICH NO ENCONTRADA EN CRISTALES NATURALES. LA DISPOSICION EPITAXIAL DE LOS COMPONENTES CONSTITUYENTES ES FORMADA EN UNA CAMARA DE REACCION QUE TIENEN FACILIDADES DE EVAPORACION, ENTRADAS DE GASES META-ORGANICOS Y ENTRADA PARA GASES DE FONDO INCLUIDO OXIGENO.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP88108908A EP0344352B1 (en) | 1988-06-03 | 1988-06-03 | Method for making artificial layered high-Tc superconductors |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2060622T3 true ES2060622T3 (es) | 1994-12-01 |
Family
ID=8199027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES88108908T Expired - Lifetime ES2060622T3 (es) | 1988-06-03 | 1988-06-03 | Metodo para la fabricacion de superconductores de elevada tc, que tienen estructura estratificada. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5439876A (es) |
EP (1) | EP0344352B1 (es) |
JP (1) | JPH0761920B2 (es) |
AT (1) | ATE112418T1 (es) |
BR (1) | BR8902555A (es) |
CA (1) | CA1330193C (es) |
DE (1) | DE3851701T2 (es) |
ES (1) | ES2060622T3 (es) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69219817T2 (de) * | 1991-03-22 | 1997-10-16 | Canon Kk | Metalloxidisches Material |
EP0586774B1 (en) * | 1992-09-11 | 1997-05-02 | International Business Machines Corporation | Process for manufacturing thin films by multilayer deposition |
US5972430A (en) * | 1997-11-26 | 1999-10-26 | Advanced Technology Materials, Inc. | Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer |
FI108375B (fi) * | 1998-09-11 | 2002-01-15 | Asm Microchemistry Oy | Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi |
US20060219157A1 (en) | 2001-06-28 | 2006-10-05 | Antti Rahtu | Oxide films containing titanium |
US7208041B2 (en) * | 2000-02-23 | 2007-04-24 | Ceracomp Co., Ltd. | Method for single crystal growth of perovskite oxides |
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US6765178B2 (en) * | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US6613656B2 (en) | 2001-02-13 | 2003-09-02 | Micron Technology, Inc. | Sequential pulse deposition |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
US6620670B2 (en) | 2002-01-18 | 2003-09-16 | Applied Materials, Inc. | Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
US6846516B2 (en) | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US6875271B2 (en) | 2002-04-09 | 2005-04-05 | Applied Materials, Inc. | Simultaneous cyclical deposition in different processing regions |
US6869838B2 (en) | 2002-04-09 | 2005-03-22 | Applied Materials, Inc. | Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications |
US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US8202364B2 (en) * | 2002-10-11 | 2012-06-19 | Ceracomp Co., Ltd. | Method for solid-state single crystal growth |
KR100564092B1 (ko) * | 2002-10-11 | 2006-03-27 | 주식회사 세라콤 | 고상 단결정 성장 방법 |
US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
US7211508B2 (en) | 2003-06-18 | 2007-05-01 | Applied Materials, Inc. | Atomic layer deposition of tantalum based barrier materials |
JP4938534B2 (ja) * | 2007-04-12 | 2012-05-23 | アルバックテクノ株式会社 | 真空溶解装置およびルツボユニット |
US20110293830A1 (en) | 2010-02-25 | 2011-12-01 | Timo Hatanpaa | Precursors and methods for atomic layer deposition of transition metal oxides |
US9062390B2 (en) | 2011-09-12 | 2015-06-23 | Asm International N.V. | Crystalline strontium titanate and methods of forming the same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE393967B (sv) * | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
FI64878C (fi) * | 1982-05-10 | 1984-01-10 | Lohja Ab Oy | Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer |
JPS6096599A (ja) * | 1983-10-31 | 1985-05-30 | Nippon Telegr & Teleph Corp <Ntt> | 酸化物超伝導体薄膜の製造方法 |
GB2162862B (en) * | 1984-07-26 | 1988-10-19 | Japan Res Dev Corp | A method of growing a thin film single crystalline semiconductor |
US4854264A (en) * | 1986-12-10 | 1989-08-08 | Fuji Seiki Inc. | Vacuum evaporating apparatus |
US4983575A (en) * | 1987-03-25 | 1991-01-08 | Hitachi, Ltd. | Superconducting thin films made of stacked composite oxide layers |
JPH0719922B2 (ja) * | 1987-07-29 | 1995-03-06 | 松下電器産業株式会社 | 超電導体および集積化超電導装置 |
DE3854828T2 (de) * | 1987-08-24 | 1996-08-22 | Sumitomo Electric Industries | Verfahren zur Herstellung einer dünnen Schicht aus zusammengesetztem supraleitendem Oxyd |
JPS6465885A (en) * | 1987-09-07 | 1989-03-13 | Sanyo Electric Co | Manufacture of superconducting thin film |
-
1988
- 1988-06-03 EP EP88108908A patent/EP0344352B1/en not_active Expired - Lifetime
- 1988-06-03 ES ES88108908T patent/ES2060622T3/es not_active Expired - Lifetime
- 1988-06-03 DE DE3851701T patent/DE3851701T2/de not_active Expired - Fee Related
- 1988-06-03 AT AT88108908T patent/ATE112418T1/de not_active IP Right Cessation
-
1989
- 1989-02-16 JP JP1035202A patent/JPH0761920B2/ja not_active Expired - Fee Related
- 1989-03-23 CA CA000594665A patent/CA1330193C/en not_active Expired - Fee Related
- 1989-06-02 BR BR898902555A patent/BR8902555A/pt not_active Application Discontinuation
-
1993
- 1993-08-16 US US08/108,138 patent/US5439876A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0344352A1 (en) | 1989-12-06 |
DE3851701T2 (de) | 1995-03-30 |
EP0344352B1 (en) | 1994-09-28 |
DE3851701D1 (de) | 1994-11-03 |
JPH029795A (ja) | 1990-01-12 |
JPH0761920B2 (ja) | 1995-07-05 |
CA1330193C (en) | 1994-06-14 |
US5439876A (en) | 1995-08-08 |
BR8902555A (pt) | 1990-01-23 |
ATE112418T1 (de) | 1994-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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