BR8902555A - Metodo para a producao de compostos supercondutores artificiais em camadas de elevada tc. - Google Patents

Metodo para a producao de compostos supercondutores artificiais em camadas de elevada tc.

Info

Publication number
BR8902555A
BR8902555A BR898902555A BR8902555A BR8902555A BR 8902555 A BR8902555 A BR 8902555A BR 898902555 A BR898902555 A BR 898902555A BR 8902555 A BR8902555 A BR 8902555A BR 8902555 A BR8902555 A BR 8902555A
Authority
BR
Brazil
Prior art keywords
artificial
layers
production
inlets
constituent components
Prior art date
Application number
BR898902555A
Other languages
English (en)
Inventor
Volker Graf
Carl Alexander Mueller
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BR8902555A publication Critical patent/BR8902555A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)
BR898902555A 1988-06-03 1989-06-02 Metodo para a producao de compostos supercondutores artificiais em camadas de elevada tc. BR8902555A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88108908A EP0344352B1 (en) 1988-06-03 1988-06-03 Method for making artificial layered high-Tc superconductors

Publications (1)

Publication Number Publication Date
BR8902555A true BR8902555A (pt) 1990-01-23

Family

ID=8199027

Family Applications (1)

Application Number Title Priority Date Filing Date
BR898902555A BR8902555A (pt) 1988-06-03 1989-06-02 Metodo para a producao de compostos supercondutores artificiais em camadas de elevada tc.

Country Status (8)

Country Link
US (1) US5439876A (pt)
EP (1) EP0344352B1 (pt)
JP (1) JPH0761920B2 (pt)
AT (1) ATE112418T1 (pt)
BR (1) BR8902555A (pt)
CA (1) CA1330193C (pt)
DE (1) DE3851701T2 (pt)
ES (1) ES2060622T3 (pt)

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DE69219467T2 (de) * 1992-09-11 1997-10-23 Ibm Verfahren zum Herstellen dünner Schichten durch Mehrlagen-Abscheidung
US5972430A (en) * 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
FI108375B (fi) 1998-09-11 2002-01-15 Asm Microchemistry Oy Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi
US20060219157A1 (en) 2001-06-28 2006-10-05 Antti Rahtu Oxide films containing titanium
US7208041B2 (en) * 2000-02-23 2007-04-24 Ceracomp Co., Ltd. Method for single crystal growth of perovskite oxides
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6613656B2 (en) * 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US6869838B2 (en) 2002-04-09 2005-03-22 Applied Materials, Inc. Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
KR100564092B1 (ko) * 2002-10-11 2006-03-27 주식회사 세라콤 고상 단결정 성장 방법
US8202364B2 (en) * 2002-10-11 2012-06-19 Ceracomp Co., Ltd. Method for solid-state single crystal growth
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
WO2004113585A2 (en) 2003-06-18 2004-12-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
JP4938534B2 (ja) * 2007-04-12 2012-05-23 アルバックテクノ株式会社 真空溶解装置およびルツボユニット
US20110293830A1 (en) 2010-02-25 2011-12-01 Timo Hatanpaa Precursors and methods for atomic layer deposition of transition metal oxides
US9062390B2 (en) 2011-09-12 2015-06-23 Asm International N.V. Crystalline strontium titanate and methods of forming the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
FI64878C (fi) * 1982-05-10 1984-01-10 Lohja Ab Oy Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer
JPS6096599A (ja) * 1983-10-31 1985-05-30 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導体薄膜の製造方法
GB2162862B (en) * 1984-07-26 1988-10-19 Japan Res Dev Corp A method of growing a thin film single crystalline semiconductor
US4854264A (en) * 1986-12-10 1989-08-08 Fuji Seiki Inc. Vacuum evaporating apparatus
US4983575A (en) * 1987-03-25 1991-01-08 Hitachi, Ltd. Superconducting thin films made of stacked composite oxide layers
JPH0719922B2 (ja) * 1987-07-29 1995-03-06 松下電器産業株式会社 超電導体および集積化超電導装置
EP0305292B1 (en) * 1987-08-24 1995-12-27 Sumitomo Electric Industries Limited A process for preparing a thin film of superconducting compound oxide
JPS6465885A (en) * 1987-09-07 1989-03-13 Sanyo Electric Co Manufacture of superconducting thin film

Also Published As

Publication number Publication date
DE3851701T2 (de) 1995-03-30
EP0344352A1 (en) 1989-12-06
CA1330193C (en) 1994-06-14
EP0344352B1 (en) 1994-09-28
JPH0761920B2 (ja) 1995-07-05
ES2060622T3 (es) 1994-12-01
ATE112418T1 (de) 1994-10-15
US5439876A (en) 1995-08-08
JPH029795A (ja) 1990-01-12
DE3851701D1 (de) 1994-11-03

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