CN116197811A - 用于结合cmp工艺的追踪数据与3d打印的cmp耗材的技术 - Google Patents

用于结合cmp工艺的追踪数据与3d打印的cmp耗材的技术 Download PDF

Info

Publication number
CN116197811A
CN116197811A CN202310301737.6A CN202310301737A CN116197811A CN 116197811 A CN116197811 A CN 116197811A CN 202310301737 A CN202310301737 A CN 202310301737A CN 116197811 A CN116197811 A CN 116197811A
Authority
CN
China
Prior art keywords
polishing
features
wireless communication
rfid tag
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310301737.6A
Other languages
English (en)
Inventor
J·G·方
R·巴贾杰
D·莱德菲尔德
A·康纳
M·科尔内霍
G·E·孟克
J·沃特金斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN116197811A publication Critical patent/CN116197811A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/003Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving acoustic means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/14Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
    • B29C64/10Processes of additive manufacturing
    • B29C64/106Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y10/00Processes of additive manufacturing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00Products made by additive manufacturing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67294Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2995/00Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
    • B29K2995/0003Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular electrical or magnetic properties, e.g. piezoelectric
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2995/00Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
    • B29K2995/0003Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular electrical or magnetic properties, e.g. piezoelectric
    • B29K2995/0005Conductive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29LINDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00Other particular articles
    • B29L2031/736Grinding or polishing equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10098Components for radio transmission, e.g. radio frequency identification [RFID] tag, printed or non-printed antennas

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Optics & Photonics (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Machine Tool Sensing Apparatuses (AREA)

Abstract

本文涉及用于结合CMP工艺的追踪数据与3D打印的CMP耗材的技术。本文提供化学机械抛光(CMP)设备及用于制造CMP设备的方法。CMP设备可包括抛光衬垫、抛光头保持环及抛光头膜等等,且可经由诸如三维(3D)打印工艺的增材制造工艺制造CMP设备。CMP设备可包括整合于其中的无线通信设备组件。制造CMP设备的方法包括将无线通信设备3D打印至抛光衬垫中且使抛光衬垫打印有经配置以接收预成型无线通信设备的凹部。

Description

用于结合CMP工艺的追踪数据与3D打印的CMP耗材的技术
本申请是申请日为2016年10月19日、申请号为201680070545.7、名称为“用于结合CMP工艺的追踪数据与3D打印的CMP耗材的技术”的中国专利申请(PCT申请号为PCT/US2016/057669)的分案申请。
技术领域
本公开的实施例一般而言是关于一种化学机械抛光(chemical mechanicalpolishing;CMP)设备及制作且使用此CMP设备的方法。更特定而言,本文所述的实施例关于用于收集CMP设备中的数据的技术,诸如收集关于CMP工艺的数据和/或关于在CMP抛光设备中找到的组件的数据的技术。
背景技术
化学机械抛光(chemical mechanical polishing;CMP)是常用于在半导体器件的制作期间平坦化基板的技术。在CMP工艺期间,将正处理的基板安装于载架头上,其中装置表面抵靠着旋转抛光衬垫定位。载架头将可控制负载提供至基板以推动装置表面抵靠着抛光衬垫。通常将抛光液(诸如,具有磨料颗粒的浆料)供应至抛光衬垫的表面。抛光衬垫是在抛光一定数目的基板之后通常变得磨损的耗材组件。因此,需要偶尔替换衬垫及其他CMP耗材组件以维持一致且适合的抛光性能。
通常通过模制、浇铸或烧结聚氨酯材料来制作抛光衬垫。在模制的情形中,可(例如通过注射模制)一次一个地制作抛光衬垫。在浇铸的情形中,将液体前体浇铸且固化成饼状物,随后将此饼状物切片成个别衬垫件。接着,可将衬垫件用机器加工至最终厚度。可将凹槽用机器加工至抛光表面中或作为注射模制工艺的部分形成凹槽。这些制造抛光衬垫的方法昂贵且耗时。此外,通过这些方法制造的抛光衬垫通常产生不均匀的抛光结果。例如,在CMP期间,可以不同速率抛光基板上的不同区域从而导致在一些区域中移除过多材料(“抛光过度”)或在其他区域中移除过少材料(“抛光不足”)。
另外,通过传统技术制造的抛光衬垫及其他CMP设备通常缺乏用于执行各种追踪、感测、监控及工艺计量功能的装置及方法。传统CMP系统通常依赖于系统级感测技术,这些感测技术通常不提供充足数据以适当地控制平坦化在进阶技术集成电路节点中形成的装置所需的CMP工艺。
因此,需要提供改良抛光性能及所期望工艺感测能力的CMP系统、抛光衬垫及其他CMP设备。另外,需要用于制造此设备的方法。
发明内容
在一个实施例中,提供一种抛光衬垫设备。此设备包括经打印的聚合主体,此经打印的聚合主体包括具有经配置以接触基板的上表面的一或多个抛光特征。经打印的聚合主体包括:第一区,其包括第一材料;以及第二区,其包括第二材料。RFID标签可整体地安置于经打印的聚合主体内且RFID标签定位于距上表面的一距离处。
在另一实施例中,提供一种化学机械抛光系统。此系统包括:平台,其具有支撑表面;以及经打印的抛光衬垫,其具有安置于其中的RFID标签。可将经打印的抛光衬垫安置于平台的支撑表面上方且亦可将询问器耦合至平台。询问器及RFID标签经配置以使用无线通信技术相互通信。亦可与平台相对地定位抛光头且抛光头可经配置以推动基板抵靠着经打印的抛光衬垫的抛光表面。
在又一实施例中,提供一种制造抛光衬垫的方法。此方法包括通过自打印头的第一喷嘴分配一或多种第一聚合材料而沉积抛光衬垫的经打印的第一部分。一或多种第一聚合材料可以是非导电的且可通过自打印头的第二喷嘴在抛光头的经打印的第一部分上分配一或多种第二聚合材料而沉积经打印的RFID标签。一或多种第二聚合材料可包括至少一种导电或半导电聚合材料。可通过自打印头的第一喷嘴分配一或多种第一聚合材料而在经打印的RFID标签及经打印的第一部分上方沉积抛光衬垫的经打印的第二部分。
在又一实施例中,提供一种使用经打印的抛光头的方法。此方法包括藉助安置于经打印的抛光衬垫内的RFID标签感测一或多个处理参数且经由询问器自RFID标签接收一或多个信号。此方法亦包括将一或多个信号传达至经调适以控制抛光工艺的控制器。
在又一实施例中,提供一种无线通信方法。此方法包括在抛光系统中执行基板抛光工艺。抛光系统可包括:平台;抛光衬垫,其耦合至平台;以及抛光头,其包括可移除地耦合至抛光头的一或多个组件。可将RFID标签耦合至一或多个组件且可经由可固定地安置于平台中的询问器自RFID接收一或多个无线通信信号。可分析一或多个无线通信信号且可自抛光头移除一或多个组件。
在又一实施例中,提供一种体现于在设计过程中使用的机器可读介质中的结构。此结构包括经打印的聚合主体,此经打印的聚合主体包括具有经配置以接触基板的上表面的一或多个抛光特征。经打印的聚合主体包括:一或多种实质上非导电第一材料;以及经打印的RFID标签,其包括可整体地安置于经打印的聚合主体内的一或多种第二材料。一或多种第二材料可以是导电的或半导电的。
在又一实施例中,提供一种非瞬态计算机可读介质。此计算机可读介质可存储指令,这些指令在由处理器执行时导致计算机系统通过执行以下操作而实施基板抛光工艺:导致基板抛光工艺的发起且接收对应于一或多个处理参数的信号。这些信号可由安置于经打印的抛光衬垫内的无线通信设备产生。可分析信号以确定处理条件且可响应于处理条件而改变一或多个处理参数中的至少一者。
在一些实施例中,可将RFID标签安置于抛光衬垫内或耦合至抛光衬垫且可将读取器安置于平台或抛光头内。在另一实施例中,可将RFID标签安置于保持环内或耦合至保持环且可将读取器安置于平台内。在另一实施例中,可将RFID标签安置于膜内或耦合至膜且可将读取器安置于平台内。可将各种传感器耦合至RFID标签以提供现场监控、感测及计量功能性。
附图说明
尽管下文简要概述其中可详细地理解本公开的上述特征的方式,但可参考附图中图示其中的一些的实施例更具体描述本公开。然而,应注意,附图仅图示示例性实施例且因此不应视为对其范围的限制,可承认其他同样有效的实施例。
图1A图示根据本文所述的实施例的抛光设备的示意性剖视图。
图1B图示根据本文所述的实施例的图1A的抛光设备的载架头的更详细横截面图。
图2是根据本文所述的实施例的抛光衬垫的示意性透视剖视图。
图3是根据本文所述的实施例的抛光衬垫的示意性横截面图。
图4是根据本文所述的实施例的具有一或多个观察窗的抛光衬垫的示意性横截面图。
图5是根据本文所述的实施例的包括支撑层的抛光衬垫的示意性横截面图。
图6图示根据本文所述的实施例的分别将RFID标签及读取器并入于其中的抛光衬垫及平台的部分示意性横截面图。
图7图示根据本文所述的实施例的RFID标签的电组件示意图。
图8图示根据本文所述的实施例的并入有近场通信组件的抛光头保持环及平台的部分横截面图。
图9图示根据本文所述的实施例的并入有近场通信组件的抛光头膜及平台的部分横截面图。
图10图示根据本文所述的一个实施例的制造具有RFID标签的抛光衬垫的方法。
图11图示根据本文所述的一个实施例的制造具有RFID标签的抛光衬垫的方法。
图12是根据本文所述的实施例的用于制造抛光衬垫的设备的示意性截面图。
为促进理解,在可能的情况下已使用相同组件符号来指定图中所共用的相同要素。应预期,可在不进一步赘述的情况下将一个实施例的要素及特征有益地并入于其他实施例中。
具体实施方式
本公开的实施例一般而言包括CMP设备及用于制造且使用该CMP设备的方法。CMP设备可包括抛光衬垫、抛光头保持环及抛光头膜等等,且可经由诸如三维(3D)打印工艺或2.5维(2.5D)打印工艺的增材制造工艺制造CMP设备。CMP设备可包括无线通信设备,诸如整合于其中的射频识别(radio frequency identification;RFID)或其他组件。制造CMP设备的方法包括将RFID标签3D打印至抛光衬垫中或3D打印至抛光衬垫上且使抛光衬垫打印有经配置以接收RFID标签的凹部。
图1A图示根据本文所述的实施例的抛光设备100的示意性截面图。可在抛光系统中利用抛光设备100来执行基板抛光。抛光台100包括平台102,此平台可绕中心轴104旋转。平台102的形状是大体圆形,但应预期,可有利地利用其他形状。可将抛光衬垫106耦合至平台102。尽管图示为耦合至平台102的单个抛光衬垫106,但应预期,也可取决于所期望的抛光特性而将多个抛光衬垫耦合至平台。根据本公开的实施例,抛光衬垫106可包括单材料层主体或复合材料主体。抛光衬垫106包括抛光表面112,其经配置以接触基板且通过自基板移除至少一些材料来处理基板。平台102支撑抛光衬垫106且在抛光期间旋转抛光衬垫106。
载架头108可紧固且固持抵靠着抛光衬垫106的抛光表面112处理的基板110。载架头108可绕中心轴114旋转和/或在划扫运动中移动以产生基板110与抛光衬垫106之间的相对运动。在抛光期间,可通过递送臂118将抛光流体116(诸如,磨料浆料)供应至抛光表面112。抛光液116可含有磨料颗粒、pH调整剂和/或化学活性组分以达成基板110的化学机械抛光。
一或多个无线通信设备600可安置于抛光衬垫106内或以其他方式耦合至抛光衬垫106。一或多个询问器601可安置于平台102内或以其他方式耦合至平台102。无线通信设备600及询问器601经配置以经由通信链路607通信。在一个实施例中,通信链路607可以是无线通信协议。在另一实施例中,通信链路607可以是有线连接。询问器以通信方式耦合至控制器612,此控制器可经由询问器601自无线通信设备600接收输入。参考图6更详细地讨论无线通信设备600、询问器601及控制器。
一般而言,无线通信设备600经配置以感测各种处理参数及系统组件。无线通信设备600可定位于抛光衬垫106内的各个位置处且可提供整个抛光表面112上方的经改良数据收集,可由控制器112分析数据以改良抛光工艺的控制。经由无线通信设备600收集的数据可用于实时工艺控制和/或用于确保兼容系统组件的利用,诸如适合的保持环120或柔性膜(未示出)以及其他系统组件。在这些实施例中,其他适合系统组件亦可采用无线通信设备以与询问器601通信。
图1B图示根据本文所述的实施例的图1A的抛光设备100的载架头108的更详细横截面图。如上文所述,载架头108经配置以在抛光或其他处理期间固持基板110。载架头108可抵靠着由可旋转平台102支撑的抛光衬垫106固持基板110且跨越基板110的背部表面136朝向抛光衬垫106分配压力。
载架头108包括基底总成140(其可直接或间接耦合至可旋转驱动轴件130)、保持环120及柔性膜132。柔性膜132在基底总成140下方延伸且与基底总成140耦合以提供多个可加压腔室,包括非圆形内腔室122a及毗邻外腔室122b。通路124a及124b穿过基底总成140形成以将腔室122a及122b分别流体地耦合至抛光设备100中的压力调节器。尽管图1B图示两个可加压腔室,但载架头108可具有任何数目的腔室,例如,三、四、五或更多个腔室。
尽管未示出,但载架头108可包括其他元件,诸如,可紧固至驱动轴件130且基底总成140可移动地自其悬吊的外壳、允许基底总成140枢转的万向节机构(其可视为基底总成140的部分)、基底总成140与外壳之间的加载腔室、腔室122a及122b内部的一或多个支撑结构或接触柔性膜132的内表面以将补充压力施加至基板110的一或多个内部膜。
柔性膜132可以是疏水性、耐用性且关于抛光工艺有化学惰性的。柔性膜132可包括经配置以接触基板110的背部表面136的安装部分138。一或多个活页134可经由夹环126、128将安装部分138耦合至基底总成140。一或多个活页134可分割腔室122a、122b以提供跨越基板110的区域压力控制。
保持环120可自柔性膜132径向向外地耦合至基底总成140。一般而言,保持环120经配置以防止基板110相对于柔性膜132过度移动且防止基板110的横向移动。保持环可由对抛光工艺中所用的化学组合物有惰性的材料制成。应预期,取决于所期望应用,保持环120可由诸如聚合物、陶瓷及金属的适合材料制成。
进阶衬垫配置及设计示例
图2是根据本文所述的实施例的抛光衬垫200的示意性透视剖视图。可在抛光台(诸如,抛光台100)中使用抛光衬垫200以通过化学机械抛光来抛光半导体基板。应预期,其他工业可使用可利用根据本文所述的实施例的抛光衬垫有利地处理的其他类型的基板。例如,光学工业可利用本文所述的衬垫及其他相关联的设备抛光各种透镜或镜片。
在所图示的实施例中,抛光衬垫200包括复合衬垫主体202。尽管未图示,但应预期,抛光衬垫主体202可由单种材料而非多种材料形成。复合衬垫主体202包括一或多个第一特征204及一或多个第二特征206。第一特征204及第二特征206是离散特征,这些离散特征在其边界处接合在一起以形成复合衬垫主体202。在一个实施例中,第一特征204可具有约40肖氏D级至约90肖氏D级的硬度。第二特征206可具有约26肖氏A级至约95肖氏A级之间的硬度值。
复合衬垫主体202可通过增材制造(例如,3D打印或2.5D打印)或其他适合技术(诸如浇铸或模制技术)形成。复合衬垫主体202可包括多个层,根据复合衬垫主体202的设计,每一层包括第二特征206的区和/或第一特征204的区。在一个实施例中,包括第一特征204和/或第二特征206的每一区可在同时或顺序打印工艺中由3D打印机沉积。例如,多个层可通过UV光或通过热源固化以凝固且达成目标硬度。在沉积且固化之后,形成整体复合衬垫主体202,包括耦合或接合在一起的第一特征204及第二特征206。固化工艺在关于非复合抛光衬垫的实施例中可以是必要的或可以不是必要的。
可针对第二特征206及第一特征204选择具有不同机械性质的材料以达成目标抛光工艺。可通过选择不同材料和/或挑选在特征形成工艺期间所用的不同固化工艺达成第二特征206及第一特征204的动态机械性质。在一个实施例中,第二特征206可具有较低硬度值及较低弹性模量值,而第一特征204可具有较高硬度值及较高弹性模量值。在另一实施例中,可在每一特征内和/或通过第二特征206及第一特征204在抛光衬垫200的抛光表面内或跨越此抛光表面的实体布局、图案或结合来调整或控制动态机械性质,诸如,弹性模量(或存储模量)及损耗模量。
第一特征204可由一或多种聚合物材料形成。用于形成第一特征204的材料可包括单种聚合物材料或两种或更多种聚合物的混合物以达成目标机械、表面、化学或热性质。在一个实施例中,第一特征204可由一或多种热塑性聚合物形成。第一特征204可由热塑性聚合物形成,诸如,聚氨酯、聚丙烯、聚苯乙烯、聚丙烯腈、聚甲基丙烯酸甲酯、聚氯三氟乙烯、聚四氟乙烯、聚甲醛、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚苯硫醚、聚醚砜、丙烯腈丁二烯苯乙烯(acrylonitrile butadiene styrene;ABS)、聚醚酰亚胺、聚酰胺、三聚氰胺、聚酯、聚砜、聚乙酸乙烯酯、氟化烃及类似物,及丙烯酸酯、上述的共聚物、接枝物及混合物。在一个实施例中,第一特征204可由丙烯酸酯形成。例如,第一特征204可以是聚氨酯丙烯酸酯、聚醚丙烯酸酯或聚酯丙烯酸酯。在另一实施例中,第一特征204可包括一或多种热固性聚合物,诸如,环氧树脂、酚类、胺、聚酯、胺甲酸乙酯、硅及丙烯酸酯、上述的混合物、共聚物及接枝物。
在一个实施例中,第一特征204可由仿真塑料3D打印材料形成。在另一实施例中,第一特征204可由聚合材料形成,此聚合材料可以是单种聚合物或聚合物的组合或热塑性材料(诸如,热塑性聚合物)。在一个实施例中,可将磨料颗粒嵌入于第一特征204中以增强抛光工艺。包括磨料颗粒的材料可以是金属氧化物(诸如二氧化铈、氧化铝、二氧化硅或其组合)、聚合物、金属间化合物或陶瓷。
用于形成第二特征206的材料可包括一或多种聚合物材料。第二特征206可由单种聚合物材料或两种或更多种聚合物的混合物形成以达成目标性质。在一个实施例中,第二特征206可由一或多种热塑性聚合物形成。例如,第二特征206可由热塑性聚合物形成,诸如,聚氨酯、聚丙烯、聚苯乙烯、聚丙烯腈、聚甲基丙烯酸甲酯、聚氯三氟乙烯、聚四氟乙烯、聚甲醛、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚苯硫醚、聚醚砜、丙烯腈丁二烯苯乙烯(acrylonitrile butadiene styrene;ABS)、聚醚酰亚胺、聚酰胺、三聚氰胺、聚酯、聚砜、聚乙酸乙烯酯、氟化烃及类似物,及丙烯酸酯、上述的共聚物、接枝物及混合物。在一个实施例中,第二特征206可由丙烯酸酯形成。例如,第二特征206可以是聚氨酯丙烯酸酯、聚醚丙烯酸酯或聚酯丙烯酸酯。在另一实施例中,第二特征206可由热塑性弹性体形成。在一个实施例中,第二特征206可由类橡胶3D打印材料形成。
在一些实施例中,第一特征204相对于第二特征206较硬且较刚性,而第二特征206相对于第一特征204较软且较柔性。可选择第一特征204及第二特征206的材料及图案以达成抛光衬垫200的“经调谐”块体材料。用此“经调谐”块体材料形成的抛光衬垫200具有各种优点,诸如改良的抛光结果、降低的制造成本、延长的衬垫寿命。在一个实施例中,“经调谐”块体材料或抛光衬垫作为整体可具有约65肖氏A至约75肖氏D之间的硬度。抛光衬垫的抗张强度可以是在5MPa至约75MPa之间。抛光衬垫可具有约5%至约350%的断裂伸长率。抛光衬垫可具有高于约10MPa的抗剪强度。抛光衬垫可具有约5MPa至约2000MPa之间的存储模量。抛光衬垫可在约25℃至约90℃之间的温度范围内具有稳定存储模量以使得E30/E90下的存储模量比落入约6至约30之间的范围内,其中E30是30℃下的存储模量且E90是90℃下的存储模量。
在一个实施例中,第一特征204及第二特征206的材料在化学上耐受来自抛光浆料的攻击。在另一实施例中,第一特征204及第二特征206的材料是亲水性的。
一般而言,第一特征204及第二特征206可以是交替的同心环,这些同心环交替地排列以形成圆形复合衬垫主体202。在其他实施例中,第一特征206及第二特征106可以是交替或其他适合排列中的自主体202延伸的离散柱。应预期,对于本文所述的实施例,亦可有利地利用各种其他抛光衬垫表面设计。在一个实施例中,第一特征204的高度210高于第二特征206的高度212以使得第一特征204的上表面208自第二特征206凸出。在第一特征204与第二特征206之间形成凹槽218或通道。在抛光期间,第一特征204的上表面208形成接触基板的抛光表面,而凹槽218保持抛光流体。在一个实施例中,第一特征204经形成在垂直于与复合衬垫主体202平行的平面的方向上具有一厚度,该厚度大于第二特征206的厚度,以使得凹槽218和/或通道形成于复合衬垫主体202的顶部表面上。
在一个实施例中,第一特征204的宽度214可在约250微米至约2毫米之间。第一特征204之间的节距216可在约0.5毫米至约5毫米之间。每一第一特征204可具有在约250微米至约2毫米之间的范围内的宽度214。宽度214和/或节距216可跨越抛光衬垫200的半径至硬度不同的区带变化。
与传统抛光衬垫相比,本公开的复合抛光衬垫200具有数个优点。传统抛光衬垫一般而言包括抛光层,此抛光层具有由软材料(诸如,发泡体)形成的子衬垫支撑的带纹理抛光表面和/或磨料材料以获得用于抛光基板的目标硬度或弹性模量。通过选择具有诸如帕松比(Poisson's ratio)、弹性模量及损耗模量等各种机械性质的材料且调整特征的尺寸及间距或变化不同特征的排列,可在不使用子衬垫的情况下在复合衬垫主体202中达成所期望硬度、动态性质和/或机械性质。因此,抛光衬垫200通过消除子衬垫降低持有成本。另外,可通过混合具有不同硬度及研磨性的特征来调谐抛光衬垫200的硬度及研磨性,因此,改良抛光性能。
根据本公开的复合抛光衬垫可通过调整图案变化和/或特征大小变化跨越表面特征(诸如,第一特征204)及基底材料(诸如,第二特征206)具有不同机械性质,诸如弹性模量(杨氏模量)及损耗模量。跨越抛光衬垫的机械性质可以是对称或不对称、均匀或不均匀的,以达成目标性质。表面特征的图案可以是径向、同心、矩形或随机的以跨越抛光衬垫达成目标性质,诸如预定机械性质,诸如弹性模量及损耗模量。在一些实施例中,第一特征及第二特征可经互锁以改良复合抛光衬垫的强度且改良复合抛光衬垫的实体完整性。第一特征及第二特征的互锁可增加抛光衬垫的抗剪强度、压缩强度和/或抗张强度。
当在抛光衬垫中并入有各种感测设备时,诸如3D打印的增材制造工艺可提供优点。下文将关于图6及7更详细地讨论诸如RFID标签及计量传感器的感测设备。
图3是根据本文所述的实施例的抛光衬垫300的示意性横截面图。抛光衬垫300包括基底层302,类似于抛光衬垫200的第二特征206的实施例,此基底层是软且弹性的。类似于第二特征206,基底层302可由一或多种弹性体聚合物形成。抛光衬垫300包括自基底层302延伸的多个表面特征306。表面特征306的外表面308可由软材料或软材料的复合物形成。在一个实施例中,表面特征306的外表面308可由与基底层302相同的材料或材料的相同复合物形成。表面特征306亦可包括嵌入于其中的第一特征304。第一特征304可由比表面特征306更硬的材料或材料的复合物形成。第一特征304可由类似于抛光衬垫200的第一特征204的材料或多种材料的材料形成。经嵌入的第一特征304变更表面特征306的有效机械性质,且因此可提供具有所期望机械和/或动态性质的衬垫供用于抛光。外表面308的软聚合层可用于减少正被抛光的基板上的缺陷且改良基板上的平坦化。替代地,可在含有本公开的抛光衬垫的其他较硬材料的表面上打印软聚合物材料以提供类似益处。
抛光衬垫300亦可包括安置于其中的无线通信设备600。除由第一特征304提供的机械性质以外,第一特征304亦可耦合至无线通信设备600,以使得可通过无线通信设备600中的组件收集某种形式的电数据(例如,电容、电阻等)。第一特征304可经由可在抛光衬垫制造工艺期间打印的导线310或类似物耦合至无线通信设备600。在一个实施例中,导线310可由与用于打印抛光衬垫300的材料兼容的一或多种导电材料打印。
在一个实施例中,第一特征304可包括充当磨损指示器的导电元件。在一些实施例中,在抛光期间,表面特征306可最终磨损掉且暴露第一特征304。可在移除表面特征306且暴露第一特征304时发起由无线通信设备600接收的各种信号(声学、电、压力等)。响应于第一特征304的暴露改变和/或产生信号可导致无线通信设备600与询问器601(未示出)通信且将处理数据提供至控制器612。因此,处理系统的操作者可接收关于使用及抛光参数的实时数据。在一个实施例中,第一特征304的暴露可指示抛光衬垫磨损且可替换抛光衬垫300以确保基板的适当抛光。
图4是根据本文所述的实施例的具有形成于其中的一或多个观察窗410的抛光衬垫400的示意性横截面图。抛光衬垫400可具有类似于抛光衬垫200的衬垫主体402。衬垫主体402可包括一或多个第二特征406及自第二特征406延伸供用于抛光的多个第一特征404。第二特征406及第一特征404可由类似于用于抛光衬垫200的第二特征206及第一特征204的材料的材料形成。可根据本公开以任何适合图案排列第一特征404。
抛光衬垫400亦含有一或多个观察窗410,这些观察窗可由透明材料形成以允许在抛光期间观察基板。观察窗410可穿过第二特征406或第一特征404形成和/或邻接第二特征406或第一特征404的部分。可在正通过使用增材制造工艺形成第一特征402及第二特征406时形成观察窗410。在一些实施例中,观察窗410可由实质上透明的材料形成,且因此能够透射自供在CMP光学端点检测系统中使用的激光器和/或白光源发射的光。在一个实施例中,观察窗410可由透明3D打印光聚合物形成。例如,观察窗410可由聚甲基丙烯酸甲酯(polymethylmethacrylate;PMMA)形成。在一些实施例中,观察窗410由以下材料形成:具有低折射率(相对于抛光浆料的折射率)且具有高光学透明度以减少自空气/窗/水界面的反射且改良穿过观察窗410往返于基板的光的透射。选择材料的光学透明度以在由端点检测系统的光学检测器使用的光束的波长范围内提供至少约25%(例如,至少约50%、至少约80%、至少约90%、至少约95%)光透射。典型的光学端点检测波长范围包括可见光谱(例如,自约400nm至约800nm)、紫外线(ultraviolet;UV)光谱(例如,自约300nm至约400nm)和/或红外线光谱(例如,自约800nm至约1550nm)。
图5是包括背托层506的抛光衬垫500的示意性透视截面图。抛光衬垫500包括基底材料层504及自基底材料层504凸出的多个表面特征502。抛光衬垫500可类似于上文所述的抛光衬垫200、300、400,除背托层506附接至基底材料层504以外。背托层506可以向抛光衬垫500提供所期望可压缩性。背托层506亦可用于变更抛光衬垫500的总体机械性质以达成所期望硬度和/或具有所期望动态材料性质(例如,弹性模量及损耗模量)。背托层506可具有小于80肖氏A级的硬度值。
在一个实施例中,背托层506可由开放巢孔式或闭合巢孔式发泡体(诸如,具有空隙的聚氨酯或多聚硅氧)形成,以使得当施加压力时巢孔(cell)/空隙坍塌且背托层506以可预测方式压缩。在另一实施例中,背托层506可由天然橡胶、乙烯丙烯二烯单体(ethylenepropylene diene monomer;EPDM)橡胶、腈或聚氯丙烯(氯丁橡胶)等等形成。
在一个实施例中,可通过使用增材制造工艺(诸如,3D打印工艺)形成背托层506。在此配置中,背托层506可由单种聚合物材料或两种或更多种聚合物的混合物形成以达成所期望机械及动态材料性质。在一个配置中,表面特征502及基底材料层504直接形成于背托层506上。在一个实施例中,背托层506可由一或多种热塑性聚合物形成,且因此可包括上文连同第一特征204和/或第二特征206所述的材料中的一或多者。
在某些实施例中,无线通信设备600可安置于抛光衬垫500中或耦合至抛光衬垫500。在一个实施例中,无线通信设备600可安置于基底材料层504或表面特征502中。在所图示的实施例中,无线通信设备600可安置于背托层506中。不管无线通信设备600的位置如何,无线通信设备600可经确定大小以跨越多个表面特征502感测一或多个处理参数。例如,可由无线通信设备600同时感测两个或更多个表面特征502。因此,可跨越抛光表面的较大区域感测各种处理参数(温度、压力、电导率等)而非感测单个表面特征502。通过感测抛光表面的较大区域,可由无线通信设备600检测经区域平均的信号。在利用多个无线通信设备600的实施例中,可通过结合来自个别无线通信设备600的数据来确定经全局平均的信号。
信息收集系统配置示例
图6图示根据本文所述的实施例的其中分别并入有无线通信设备600及询问器601的抛光衬垫200及平台102的部分示意性横截面图。抛光衬垫200意欲表示经配置以在其中并入有整合感测或计量设备的任何抛光衬垫。例如,抛光衬垫可被打印、浇铸或模制,无线通信设备600被安置于其中。在一个实施例中,无线通信设备600经配置以与询问器以无线方式通信。无线通信协议的示例包括近场通信技术、
Figure BDA0004145317660000131
光学信号传输技术、声学信号传输技术、射频通信技术及其他适合无线通信技术。替代地,无线通信设备600可硬连线至询问器601以促进其间的通信。
尽管图6中图示单个无线通信设备600及单个询问器601,但应预期,可在衬垫及平台中分别实施多个无线通信设备600及询问器601(参见图1)。另外,可由单个询问器601感测一或多个无线通信设备600。亦应预期,无线通信设备600可定位于衬垫200的表面之内或之上各个位置处,诸如,中心位置(即,圆形衬垫的原点或旋转轴重合点处)、中间位置(即,距圆形衬垫的原点的1/2半径)或外部位置(即,毗邻的圆形衬垫的圆周)。亦可组合地利用多个NFC设备600且可一起利用各个位置(即,中心位置及外部位置,或中心、中间及外部位置)。通过相互协调地利用多个无线通信设备600,将由于跨越衬垫20在多个地址处收集数据而产生处理环境的较综合视角。一般而言,无线通信设备600相对于衬垫200定位以使得基板110的路径在处理期间跨越抛光系统100的抛光表面在抛光工艺的各个点期间重叠。
类似地,询问器601可定位于平台102内各个位置处,诸如中心、中间及外部位置。询问器的位置可独立于无线通信设备600位置确定或可至少部分地通过无线通信设备位置来确定以促进无线通信设备600与询问器601之间的通信。
安置于平台102中的询问器601一般而言包括读取器608及天线610。读取器可包括或耦合至电源(诸如,RF电源)且可经配置以经由天线610传输待由无线通信设备600接收的信号。在一个实施例中,读取器608可除其他设备外亦包括RF调制器及询问器控制器,此询问器控制器经配置以管理读取器608的信号传输及接收。在一个实施例中,RF调制器可经配置以产生和/或调制具有约13.56MHz的波长的RF信号。在被动标签实施例中,询问器601及无线通信设备600可以具有小于约12英寸(例如,小于约2英寸,诸如小于约1英寸)的距离的空间关系定位。在主动标签实施例中,询问器601与无线通信设备600之间的空间关系可大于被动标签实施例且可取决于可用于信号传输的功率。
无线通信设备600一般而言包括标签602及天线606,此天线耦合至标签602或整体地制造于标签602中。在某些实施例中,传感器604亦可以通信方式耦合至标签602。取决于所期望实现,标签602可以是主动标签或被动标签。在主动标签实施例中,电源(诸如,电池)可电耦合至标签且将适合功率提供至标签,因此标签可经由形成于装置之间的通信链路607将信号传输至询问器601。应预期,主动标签可实施于其中将功率耦合至标签的实施例中。另外,主动标签可用于其中由标签传输的数据意欲在大于可在使用被动标签时所获得距离的距离处由询问器601感测的实施例中。然而,应预期,主动标签可用于其中会适合地利用被动标签的近场通信实施例中。
在被动标签实施例中,标签可经配置以自询问器601接收信号(诸如,射频信号)且利用所接收信号的电磁能以经由通信链路607将含有标签602独有的一定量的数据的信号传输(或反射)回询问器601。被动标签可用于其中以小于距标签602的临界通信距离定位询问器601的实施例中。临界通信距离一般而言定义为超出后便不由询问器601可靠地接收由被动标签反射的电磁信号的距离。临界通信距离可取决于与由询问器601产生的信号相关联的功率量和标签传输器的大小及功率而根据实施例变化。下文参考图7讨论被动标签的更详细描述。
图7图示根据本文所述的实施例的无线通信设备600的电组件示意图。图7中所图示的实施例意欲表示基本功能标签,且因此应预期,可实施各种其他电组件设计或配置以达成标签的所期望功能。标签602一般而言包括晶体管702、电感器704、电容器706及集成电路708。在一个实施例中,集成电路708可表示经配置以存储标签602独有的数据的存储器。在另一实施例中,存储器可经配置以在将由传感器604接收的数据传输至询问器601之前存储此数据。在某些实施例中,电感器704(诸如,电感线圈)可用作天线以在询问器601与电感器704之间接收且传输信号。在一个实施例中,电感器704是天线606且用于经由形成于装置之间的通信链路将含有来自标签602的数据的信号以电感方式反射至询问器601。
重新参考图6,无线通信设备600及更特定而言标签602可定位于抛光衬垫200内在衬垫200的上表面208下方,此上表面在处理期间接触基板。在一个实施例中,无线通信设备600定位于上表面208下方约200μm与约500μm之间的距离620处。可基于由标签602和/或传感器604执行的感测的所期望类型及衬垫200的表面的形貌(例如,凹槽、通道或其他特征)而选择距离620。在另一实施例中,标签602可定位于顶部表面208下方距离620处但传感器604可较靠近于顶部表面208。尽管仅图示一个传感器604,但应预期,可并入有多个传感器以提供一系列追踪、感测及计量数据以监控及改良抛光性能。例如,可现场(即,在抛光期间)执行由无线通信设备600确定的抛光性能且可现场调整处理参数以改良基板抛光特性。可感测的处理参数包括温度数据、压力数据、电导率数据、弹性模量数据、光学数据、声学数据、膜厚度数据及经配置以在基板抛光工艺期间测量处理参数的其他数据类型。
在一个实施例中,安置于传感器604与衬垫200的抛光表面之间的衬垫200的区622可经配置以增强通过使用耦合至区622的传感器604对所期望处理参数的测量。在一个实施例中,区622可自传感器604延伸至衬垫200的顶部表面208,或在另一实施例中,区622可自传感器604延伸至凹槽218。通过减小感测所期望处理参数的“阻力”,可实时达成处理参数的较准确测量。例如,若传感器604是温度传感器,则区622可由导热系数大于衬垫200的其余部分的导热材料形成。通过减小衬垫200的抛光表面与传感器604之间的热阻,可以较大速率达成由传感器604进行的信号检测。
在另一示例中,若传感器604是压力传感器,则区622可由弹性模量大于衬垫200的其余部分的材料形成。换言之,区622可比周围衬垫材料更硬以促进在抛光表面处对所施加压力的较准确感测。在另一示例中,若传感器604是经配置以检测抛光表面处的电导率的改变的电导率传感器,则区622可由含有电导率大于周围衬垫材料的区的材料形成。因此,可减小区622中的电阻,这可改良传感器604自抛光表面接收信号的数据速率。应预期,可采用各种其他传感器且可在区622中利用适当配置的材料以改良处理参数检测的准确性。一般而言,可经由3D打印工艺有利地采用区622的制造,3D打印工艺以成本高效且可控制方式达成衬垫200内的材料选择性。
传感器604意欲表示适于在CMP工艺中使用的各种类型的感测及计量设备。在一个实施例中,传感器604可经配置用于抛光系统识别及追踪。例如,抛光系统100可经配置以在将具有无线通信设备600的抛光衬垫安装至平台102时参与操作。在此实施例中,平台102中的询问器601将自标签602接收数据,该数据指示已将正确类型的抛光衬垫安装于抛光系统上。在经由由询问器601接收的标签数据认证抛光衬垫类型之后,抛光系统101将“解锁”且参与全部抛光功能性。在一些实施例中,在经由所接收标签数据认证抛光衬垫类型之后,抛光系统101基于所接收标签数据调整一或多个抛光参数。在一个示例中,所接收标签数据可包括关于抛光衬垫类型、衬垫配置(例如,表面特征502、基底材料层504以及背托层506类型、厚度)、衬垫200的表面结构的信息或其他有用信息。
在另一实施例中,传感器604可用于追踪安装于抛光系统100上的抛光衬垫的使用统计。例如,可由无线通信设备600追踪已利用衬垫的循环数量且可将该数据传输至询问器601。可解释该数据且可较准确地追踪衬垫寿命以确保以提供经改良抛光特性的间隔替换衬垫。在一些实施例中,抛光系统101基于在经传输标签数据中接收的抛光衬垫的经追踪使用统计而调整一或多个抛光参数。
在一些实施例中,传感器604(或在某些实施例中,多个传感器)可经配置以检测一或多个抛光参数。在一个示例中,传感器604可以是热传感器(例如,RTD、热电偶),此热传感器包括经配置以检测抛光衬垫200、浆料、基板110或其任何组合的温度的组件。在另一示例中,传感器604可以是声学传感器(未示出),此声学传感器经配置以确定抛光工艺期间的声学振动改变。电导率传感器是可用于无线通信设备600中的另一类型的传感器604。在此示例中,电导率传感器(未示出)可经配置以检测浆料中的金属负载(即,金属浓度的增加)或由于自衬垫200的各个区的浆料清洁所致的跨越衬垫200的表面的电导率改变。在一个配置中,电导率传感器可包括两个电极(未示出),这些电极与标签602及无线通信设备600通信且各自暴露于抛光表面208处。接着可使用经暴露电极以通过使用标签602中所找到的组件跨越电极施加电压而直接测量浆料、基板表面和/或衬垫200的表面的电导率。在一些实施例中,抛光系统101基于自标签602递送至询问器601的经传输标签数据中所接收的一或多个抛光参数数据而调整一或多个抛光参数。
传感器604的另一示例是加速度计(例如,MEMS装置),此加速度计可经配置以感测角动量、动态力、相对于角旋转方向自平面向外的振动移动和/或扭矩的改变。传感器604的额外示例是用于感测抛光期间抵靠着基板110的衬垫200的剪应力的摩擦力传感器,诸如,应变仪。传感器604的又一实施例是压力传感器,诸如荷重计(例如,MEMS荷重计),此压力传感器可经配置以测量施加至衬垫200的力及跨越基板110的地带压力(即,腔室122a、122b)。在一些实施例中,抛光系统101基于加速度计、摩擦力传感器、自标签602传送至询问器601的剪应力和/或负载数据而调整一或多个CMP抛光参数。
上述传感器实施例可单独或相互结合地用于在抛光期间更有效地测量处理参数。应预期,可实施抛光工艺的现场处理和/或实时调整以改良(例如)抛光均匀性及抛光端点检测。一般而言,响应于一或多个经检测处理参数而由传感器604产生的信号可由标签602编码且由天线606传输。抛光系统101经配置以基于在自标签602递送至询问器601及控制器612的经传输标签数据中所接收的传感器数据而调整一或多个抛光工艺参数。
询问器601亦可以通信方式耦合至基于处理器的系统控制器,诸如,控制器612。例如,控制器612可经配置以导致由读取器608产生信号。控制器612亦可经配置以接收且分析经由询问器601自无线通信设备602接收的数据。控制器612包括可编程中央处理单元(central processing unit;CPU)614,此可编程中央处理单元可与耦合至抛光设备100的各种组件的存储器618(例如,非易失性存储器)及大容量存储装置、输入控制单元及显示单元(未示出)(诸如,电源、时钟、高速缓存、输入/输出(input/output;I/O)电路及类似物)一起操作以促进基板抛光工艺的控制。控制器612亦可包括用于经由抛光设备100中的系统级传感器监控基板处理的硬件。
如上文所述,为促进抛光设备100(且更特定而言,无线通信设备600及询问器601)的控制,CPU 614可以是可在用于控制各种腔室及子处理器的工业环境(诸如,可编程逻辑控制器(programmable logic controller;PLC))中使用的任何形式的通用计算机处理器中的一者。存储器618耦合至CPU 614且存储器618是非瞬态的且可以是现成存储器中的一或多者,诸如随机存取存储器(random access memory;RAM)、只读存储器(read onlymemory;ROM)、软盘驱动器、硬磁盘或任何其他形式的数字存储器(本地或远程)。支持电路616耦合至CPU 614以用于以传统方式支持处理器。经由询问器601来自无线通信设备600的信号产生指令、数据接收及分析可由存储器618执行且通常作为软件例程存储于存储器618中。软件例程亦可由第二CPU(未示出)存储和/或执行,此第二CPU位于正由CPU 618控制的硬件的远程。
存储器618为含有指令的计算机可读存储介质的形式,这些指令在由CPU 614执行时促进抛光设备100的操作,包括无线通信设备600及询问器601的操作。存储器618中的指令为程序产品(诸如,实施本公开的方法的程序)形式。程序代码可依照若干不同程序设计语言中的任何一者。在一个示例中,本公开可实施为存储于计算机可读存储介质上供与计算机系统一起使用的程序产品。程序产品的程序定义实施例(包括本文所述的方法)的功能。说明性计算机可读存储介质包括但不限于:(i)不可写入存储介质(例如,计算机内的只读存储器装置诸如可由CD-ROM驱动器读取的CD-ROM盘、闪存、ROM芯片或任何类型的固态非易失性半导体存储器),信息永久地存储在此存储介质上;以及(ii)可写入存储介质(例如,磁盘驱动器或硬盘驱动器内的软盘或任何类型的固态随机存取半导体存储器),在此存储介质上存储可变更信息。这些计算机可读存储介质在携载针对本文所述的方法的功能的计算机可读指令时为本公开的实施例。
图8图示根据本文所述的实施例的图示并入有无线通信设备600的保持环120及平台102的抛光头108的部分横截面图。一般而言,保持环120经配置且经定位以防止抛光工艺期间基板110的不期望移动。如图所示,保持环120可自柔性膜132向外径向地安置。因此,保持环120毗邻于且极接近于衬垫106及平台102而安置。在某些实施例中,保持环120可被可移除地耦合至抛光头108以促进保持环120的替换(若需要)。
在一个实施例中,无线通信设备600可安置于保持环120的面向衬垫106的表面上或限定此表面。替代地,无线通信设备600可安置于保持环120内远离保持环120的面向衬垫106的表面的另一位置处。无线通信设备600及询问器601可如此接近地安置以允许抛光工艺期间的近场通信。因此,将一或多个传感器(诸如,上文所述的传感器)并入至保持环120中可以是有利的。
在一个实施例中,可通过3D打印工艺制造保持环120及无线通信设备600。3D打印工艺可达成保持环120及无线通信设备600的同时制作。替代地,可在保持环120的3D打印期间维持空隙且随后可将预制造的无线通信设备插入至此空隙中。在某些实施例中,无线通信设备600可提供关于经由抛光系统100旋转抛光头108的处理数据。亦应预期,除非诸如衬垫106、平台102及抛光头108的适当配置组件的每一者皆安装于抛光系统100上,否则保持环100及无线通信设备600可用于“锁定”抛光系统100的操作。亦可由安置于保持环120中的无线通信设备600检测其他抛光工艺参数监控及感测,诸如热、电导率、压力、应力及声学感测。
图9图示根据本文所述的实施例的并入有无线通信设备600的柔性膜132及平台102的部分横截面图。柔性膜132一般而言经配置以将基板110紧固于柔性膜上且在抛光期间推动基板110抵靠着衬垫106。柔性膜132一般而言利用压力梯度以将基板110耦合于柔性膜上以防止抛光工艺期间的基板110的不期望移动。在某些实施例中,柔性膜132可被可移除地耦合至抛光头108以促进柔性膜132的替换(若需要)。
在一个实施例中,无线通信设备600可安置于限定腔室122a、122b中的任一者或此两者的柔性膜132的表面上或限定此表面。替代地,无线通信设备600中的一或多者可安置于柔性膜132的一部分内。因此,柔性膜132毗邻于且极接近于正抵靠着衬垫106及平台102推动的基板110的后表面安置。无线通信设备600及询问器601可如此接近地安置以允许抛光工艺期间的近场通信。因此,将一或多个传感器(诸如,上文所述的传感器)并入至柔性膜132中可以是有利的。
在一个实施例中,可通过3D打印工艺制造柔性膜132及无线通信设备600。3D打印工艺可达成柔性膜及无线通信设备600的同时制作。在此实施例中,无线通信设备600可全部地或部分地安置于柔性膜132内。在此示例中,应预期,无线通信设备600可呈现适合挠度以允许柔性膜132的挠曲。替代地,可在柔性膜132的3D打印期间维持空隙且随后可将预制造的无线通信设备插入至此空隙中。
类似于安置于保持环120内的无线通信设备,无线通信设备600可提供关于经由抛光系统100旋转包括柔性膜132的抛光头108的处理数据。在另一实施例中,无线通信设备600可提供关于柔性膜132的加压及降压循环的处理数据。亦应预期,除非诸如衬垫106、平台102及抛光头108的适当配置组件的每一者皆安装于抛光系统100上,否则柔性膜132及无线通信设备600可用于“锁定”抛光系统100的操作。如上文所述,在提供抵靠着基板110施加的压力数据的监控及感测中,并入有无线通信设备600的柔性膜132可尤其有用。亦可由安置于柔性膜132中的无线通信设备600执行其他抛光工艺参数监控及感测,诸如热、电导率、压力、应力及声学感测。
应预期,可结合图8及图9的实施例以提供具有安置于保持环120及柔性膜132两者内的无线通信设备600的抛光系统100。一般而言,无线通信设备600可经配置以在抛光系统100内的不同位置处感测相同处理参数或无线通信设备600可经配置以感测不同处理参数。此外,无线通信设备600可制造至抛光头108的其他组件(诸如,3D打印的组件)中。另外,耦合至保持环120或柔性膜132的无线通信设备600可与询问器601通信,此询问器可固定地安置于平台102内。由询问器601接收的信号可由控制器612分析且可自抛光头108移除保持环120和/或柔性膜132。例如,若来自无线通信设备600的信号指示保持环120和/或柔性膜132的不良处理性能,则可替换保持环120和/或柔性膜132。替代地,若保持环120和/或柔性膜132未经配置供在抛光头108中使用,则控制器612可指示其不兼容性且可用适当配置组件替换保持环120和/或柔性膜132。
无线通信设备600一般而言经配置以按毫秒数据速率或更大速率收集数据。因此,适合于检测且传输处理参数数据的时间常数可以是无线通信设备600的优点。在某些实施例中,可相关于正检测的参数自无线通信设备600的物理位置导出经改良的时间常数。因此,可执行实时参数感测且将此实时参数感测传达至控制器612以改良抛光工艺。
另外,可连续地或间歇地操作无线通信设备600。例如,若无线通信设备600安置于衬垫200内,则无线通信设备600可经配置以连续地感测各种处理参数。替代地,可间歇地操作无线通信设备600以在正在毗邻无线通信设备600的区中抛光基板时检测处理参数。类似地,可连续地或间歇地操作耦合至保持环120或柔性膜132的无线通信设备600。控制器612可耦合至可确定抛光头108相对于询问器601的位置的邻近传感器(未示出)或类似物。当抛光头定位于适合于由询问器601通信的区中时,邻近传感器可将信号提供至控制器612。控制器612可导致询问器601发起无线通信设备600与询问器601之间的信号传输。当抛光头108(及耦合至保持环120或柔性膜132的无线通信设备600)位于适合于与询问器601通信的位置中时,邻近传感器可发信号至控制器612且控制器612可终止自询问器601的信号传输和/或接收。
在利用多个无线通信设备600的实施例中,询问器601可经配置以与多个无线通信设备600通信且经由控制器612协调抛光。替代地,可利用多个询问器。在此实施例中,可将单个无线通信设备以通信方式耦合至单个询问器。应预期,可利用任何数目的无线通信设备及询问器以改良抛光工艺监控及感测。若利用多个无线通信设备及询问器,则可将各种波长滤波器和/或电磁屏蔽设备并入至抛光系统中以减少或消除无线通信设备和/或询问器之间的不期望的串扰。
图10图示根据本文所述的一个实施例的制造具有RFID标签的抛光衬垫的方法1000。尽管下文所述的图10及图11的实施例是针对抛光衬垫的增材制造,但应预期,这些实施例可以可应用于其他抛光系统组件,诸如保持环及柔性膜等等。此外,可利用诸如浇铸及模制的其他制造工艺以形成具有安置于其中的RFID标签的衬垫。
在操作1010处,打印抛光衬垫的第一部分。用于第一部分的适合材料可包括关于图2所提及的材料,但一般而言包括经配置以抛光基板的聚合材料。关于图12更详细地描述打印工艺,诸如3D打印工艺。抛光衬垫的第一部分可以是基底层或衬垫特征的结合。
在操作1020处,在第一部分上打印无线通信设备600,诸如RFID标签。用于打印RFID标签的适合材料一般而言包括导电材料或半导电材料。导电和/或半导电聚合物材料的示例包括但不限于聚(芴)、聚(苯撑)、聚(芘)、聚(薁)、聚(萘)、聚(乙炔)、聚(对苯撑伸乙烯)、聚(吡咯)、聚(咔唑)、聚(吲哚)、聚(氮呯)、聚(苯胺)、聚(噻吩)、聚(3,4-伸乙二氧基噻吩)及聚(对苯撑硫醚)材料等等,包括上述组合及混合物。另外,可利用含有所期望导电或半导电性质的纳米颗粒的材料,诸如油墨。例如,可利用银或金纳米颗粒来形成导电油墨或可利用硅纳米颗粒来形成半导电油墨。上述纳米颗粒可并入至上文所提及的聚合物材料或可与其他适合材料一起利用。在其他实施例中,可通过增材制造工艺(3D打印)或丝网打印工艺沉积金属材料来打印RFID标签的各部分。
在操作1030处,在RFID标签上方且围绕RFID标签打印抛光衬垫的第二部分。亦可在抛光衬垫的第一部分上方打印抛光衬垫的第二部分。如此,RFID标签可全部地或部分地囊封于抛光衬垫内。在一个实施例中,抛光衬垫的第二部分可经配置以接触且抛光基板。在另一实施例中,抛光衬垫的第一部分可经配置以接触且抛光基板。
图11图示根据本文所述的一个实施例的制造并入有无线通信设备600(诸如,RFID标签)的抛光衬垫的方法1100。在操作1110处,可打印抛光衬垫的第一部分,其中具有形成于其中的凹部或空隙。凹部可以是其中实质上不存在衬垫材料的第一部分的区。凹部可经确定大小而具有适合尺寸以容纳预制造的RFID标签。
在操作1120处,可将预成型的RFID标签插入至形成于第一部分中的凹部中。可在标签基板上形成RFID标签或可将RFID标签压入配合、黏结、黏附或以其他方式机械地耦合至第一部分处于凹部内。在操作1130处,可在RFID标签上方且围绕RFID标签打印抛光衬垫的第二部分。因此,预制造的RFID标签可经囊封且安置于衬垫的第一及第二部分内。
在关于图10及图11所述的实施例中,标签打印工艺及凹部形成工艺可考虑到最终形成的衬垫的可压缩性。由于RFID标签一般而言由可具有不同于第一及第二衬垫部分的材料的机械性质及动态性质的材料形成,因此应预期,可将各种微结构元件并入至衬垫的RFID标签或部分中以提供跨越衬垫具有较均匀机械性质及动态性质的衬垫。亦应预期,可将各种其他组件(诸如,布线)整体地制造至抛光衬垫中。在一些实施例中,调整安置于RFID标签下方和/或RFID标签上方的经添加材料的层的组分和/或性质以跨越衬垫提供均匀机械性质及动态性质。换言之,通过以下方式可补偿抛光衬垫的局域化区内的RFID标签的存在:通过调整使用本文所述的增材制造工艺沉积的材料和/或材料结构来调整RFID标签下方、RFID标签上方或毗邻于RFID标签的材料的材料性质。因此,通过使用增材制造工艺形成且具有安置于其中的一或多个RFID标签的衬垫、膜、保持环及其他结构可具有较均匀机械及动态性质,即使将一或多个RFID标签安置于所形成装置内亦如此。
图12是根据本文所述的实施例的用于制造抛光衬垫及其他CMP设备的3D打印设备1200的示意性剖视图。尽管参考抛光衬垫(诸如,抛光衬垫200、300、400及500)举出下文所述的特定示例,但应预期,亦可通过3D打印工艺制造其他CMP设备,诸如保持环(即,保持环120)及柔性膜(即,柔性膜132)。在一个实施例中,可在支撑物1202上打印抛光衬垫200。由液滴喷射打印机1206依据CAD(计算机辅助设计)程序形成抛光衬垫200。液滴喷射打印机1206及支撑物1202可在打印工艺期间彼此相对移动。
液滴喷射打印机1206一般而言包括具有用于施配前体的喷嘴的一或多个打印头。可以诸如液体或粉末形式的各种形态提供前体。在所图示的实施例中,液滴喷射打印机1206包括具有第一喷嘴1210的第一打印头1208及具有第二喷嘴1212的第二打印头1214。第一喷嘴1210可经配置以施配用于第一材料(诸如,软或弹性材料)的液体前体,而第二喷嘴1212可用于施配用于第二材料(诸如,硬材料)的液体前体。在另一实施例中,头1208、1214及喷嘴1210、1212可经配置以加热聚合前体以使前体以可流动或类液体状态流动以达成所期望设备的形成。
在其他实施例中,液滴喷射打印机1206可包括两个以上打印头以形成具有两种以上材料的抛光衬垫。例如,在关于打印RFID标签(诸如,无线通信设备600)的实施例中,第一喷嘴1210可经配置以施配导电或半导电材料的聚合前体以打印标签的导电组件。第二喷嘴1212可经配置以施配用于非导电标签组件的非导电材料的聚合前体。可在经选择位置或区处施配前体以形成抛光衬垫200。这些经选择位置集体地形成目标打印图案且可存储为CAD兼容文档,接着由控制液滴喷射打印机1206的电子控制器1204(例如,计算机)读取此CAD兼容文档。
本文所述的3D打印工艺包括但不限于聚合物喷出沉积、喷墨打印、熔融沉积模型化、黏结剂喷出、粉末床熔融、选择性激光烧结、立体微影、还原光聚合数字光处理、薄片层压及定向能量沉积以及其他3D沉积或打印工艺。
在3D打印之后,可通过固化来凝固抛光衬垫。可通过将经打印的抛光衬垫加热至固化温度来执行固化。替代地,可通过将经打印的抛光衬垫暴露至由紫外线光源产生的紫外线来执行固化。
3D打印提供用于产生由不同材料和/或不同材料组合物形成的抛光衬垫的方便且高度可控制工艺。例如,3D打印使得能够将NFC设备(诸如,RFID标签)高效且成本有效地并入至抛光衬垫。
例如,抛光衬垫200可由两种或更多种材料的混合物形成。在此实施例中,衬垫及衬垫特征可由一或多种第一材料形成且整体地安置于衬垫内的无线通信设备600可由一或多种第二材料形成。在一个实施例中,一或多种第一材料主要为非导电的而一或多种第二材料主要为导电或半导电的。在此实施例中,可用经由第一打印头1208自第一喷嘴1210挤压的第一材料液滴的混合物形成衬垫200及抛光特征204、206。无线通信设备(此处未示出但图6中更详细地图示)可用经由第二打印头1214自第二喷嘴1212挤压的第二材料液滴的混合物形成。打印头1210可首先与对应于抛光特征204、206的像素对准且在预定像素上施配液滴。打印头1212可接着与对应于无线通信设备的像素对准且在预定像素上施配液滴。结果是,可在顺序工艺中形成抛光特征204、206及无线通信设备。亦应预期,取决于3D打印设备1200的设计,可同时形成抛光特征204、206及无线通信设备600。
可根据一或多种第一材料的比率和/或分布来调整或调谐抛光特征204、206的性质。可根据一或多种第二材料的比率和/或分布来形成无线通信设备600。在一个实施例中,可通过选择自第一喷嘴1210挤压的液滴的大小、位置、速度和/或密度来控制抛光特征204、206的组分。类似地,通过选择自第二喷嘴1212挤压的液滴的大小、位置、速度和/或密度来控制无线通信设备的组分。因此,应预期,本公开的实施例涵盖用多种材料形成抛光衬垫且可利用此材料来制造具有安置于其中的无线通信设备的抛光衬垫。
增材制造工艺示例
在一个实施例中,3D打印可用于制造抛光衬垫、保持环、柔性膜及本文所述的其他CMP抛光设备组件。在一个实施例中,可通过针对3D对象的每一层的组件的CAD模型的使用及用于映射关于这些组件的信息的切片算法的使用来执行形成3D对象的方法。可通过在粉末床的表面上方分配粉末来形成对象的层。可接着沉积经挑选的黏结剂材料以便选择性地接合其中待形成对象的区的颗粒。可降低支撑粉末床及正制造的组件的致动器(例如,活塞)以形成下一粉末层。在形成每一层之后,重复工艺后接着进行最终固化工艺(例如,UV暴露或热处理)以完成对象的一部分。由于3D打印可对材料组分、微结构及表面纹理实行局部控制,因此借助本文所述的方法达成各种(及先前难达到的)几何形状。
在一个实施例中,可在可由计算机显现装置或计算机显示设备读取的数据结构中表示如本文所述的抛光衬垫。图12示出根据一个实施例的具有计算机可读介质的计算机系统(即,电子控制器1204)的示意性表示。计算机可读介质可含有表示抛光衬垫的数据结构。数据结构可以是计算机文档且可含有关于一或多个组件的结构、材料、纹理、物理性质或其他特性的信息。数据结构亦可含有代码,诸如实现计算机显现装置或计算机显示设备的经选择功能性的计算机可执行代码或装置控制代码。数据结构可存储于计算机可读介质上。计算机可读介质可包括实体存储介质,诸如磁性存储器或任何方便实体存储介质。实体存储介质可以是可由计算机系统读取以在计算机屏幕或实体显现装置(其可以是增材制造装置,诸如,3D打印机)上显现由数据结构表示的组件。
尽管上文是针对本公开的实施例,但可在不背离本公开的基本范围的情况下想到本公开的其他及额外实施例,且本公开的范围由下文的权利要求确定。

Claims (20)

1.一种抛光衬垫设备,包括:
经打印的聚合主体,所述经打印的聚合主体包括:
多个抛光特征,所述多个抛光特征包括第一材料并且限定抛光表面,所述抛光表面经配置以接触基板;以及
一或多个基底特征,所述一或多个基底特征包括与所述第一材料不同的第二材料,其中
所述一或多个基底特征被安置成距所述多个抛光特征的所述抛光表面一距离,并且所述一或多个基底特征和所述多个抛光特征沿着与所述抛光表面平行的方向以交替布置进行安置;以及
RFID标签,所述RFID标签整体地安置于所述经打印的聚合主体内。
2.如权利要求1所述的设备,其中所述第一材料和所述第二材料选自由以下各项组成的群组:环氧树脂、酚类、胺、聚酯、胺甲酸乙酯、硅、丙烯酸酯、上述项的混合物、共聚物以及接枝物。
3.如权利要求1所述的设备,其中所述RFID标签具有电感天线,所述电感天线经配置以使用无线通信技术与询问器通信。
4.如权利要求1所述的设备,其中所述RFID标签被定位在距所述抛光表面200μm至500μm之间。
5.如权利要求1所述的设备,其中凹部被形成在所述经打印的聚合主体中,并且所述RFID标签被耦合至形成在所述经打印的聚合主体内的所述凹部的表面。
6.如权利要求5所述的设备,其中所述RFID标签包括导电聚合物材料,所述导电聚合物材料包括导电纳米颗粒。
7.如权利要求1所述的设备,其中所述多个抛光特征被形成在所述一或多个基底特征上,所述多个抛光特征具有第一高度,所述一或多个基底特征具有第二高度,其中所述第一高度大于所述第二高度。
8.一种化学机械抛光系统,包括:
平台,所述平台具有支撑表面;
经打印的抛光衬垫,所述经打印的抛光衬垫具有安置于其中的RFID标签,其中所述RFID标签存储与所述经打印的抛光衬垫的性质相关联的多个信息,所述经打印的抛光衬垫安置于所述平台的所述支撑表面上方并且包括:
多个抛光特征,所述多个抛光特征包括第一材料并且限定抛光表面,所述抛光表面经配置以接触基板,其中所述多个抛光特征被布置成同心环;以及
一或多个基底特征,所述一或多个基底特征包括与所述第一材料不同的第二材料,其中所述一或多个基底特征被安置成距所述抛光表面一距离,并且其中所述一或多个基底特征和所述多个抛光特征沿着与所述抛光表面平行的方向以交替布置进行安置;以及
抛光头,所述抛光头与所述平台相对地定位,其中所述抛光头经配置以推动基板抵靠着所述经打印的抛光衬垫的所述抛光表面。
9.如权利要求8所述的抛光系统,进一步包括:
询问器,所述询问器耦合至所述平台,其中所述询问器和所述RFID标签经配置以使用无线通信技术相互通信。
10.如权利要求8所述的抛光系统,其中所述经打印的抛光衬垫由非导电聚合物材料形成,且所述RFID标签由导电聚合物材料形成。
11.如权利要求8所述的抛光系统,进一步包括:
保持环,所述保持环包括安置于其中的RFID标签。
12.如权利要求8所述的抛光系统,进一步包括:
柔性膜,所述柔性膜包括安置于其中的RFID标签。
13.如权利要求8所述的抛光系统,其中凹部被形成在所述经打印的抛光衬垫中,并且所述RFID标签被耦合至形成在所述经打印的抛光衬垫内的所述凹部的表面。
14.一种制造抛光衬垫的方法,包括:
通过分配第一材料形成聚合主体的多个抛光特征,其中所述多个抛光特征被布置成同心环并限定抛光表面,所述抛光表面经配置以接触基板;
通过分配第二材料形成所述聚合主体的一或多个基底特征,所述第二材料与所述第一材料不同;以及
将射频识别(RFID)标签安置于所述聚合主体内并距所述抛光表面一距离,其中
所述一或多个基底特征各自安置于距所述多个抛光特征一距离处,
所述一或多个基底特征和所述多个抛光特征沿着与所述抛光表面平行的方向以交替布置进行安置,以及
所述RFID标签存储与所述聚合主体的两个或更多个性质相关联的多个信息。
15.如权利要求14所述的方法,其中所述第一材料和所述第二材料选自由以下各项组成的群组:环氧树脂、酚类、胺、聚酯、胺甲酸乙酯、硅、丙烯酸酯、上述项的混合物、共聚物以及接枝物。
16.如权利要求14所述的方法,其中所述RFID标签具有电感天线,所述电感天线经配置以使用无线通信技术与询问器通信。
17.如权利要求14所述的方法,其中所述距离在距所述抛光表面约200μm至约500μm之间。
18.如权利要求14所述的方法,进一步包括:
在所述聚合主体内形成凹部,其中
所述RFID标签被耦合至形成在所述聚合主体内的所述凹部的表面。
19.如权利要求18所述的方法,其中所述RFID标签包括导电聚合物材料,所述导电聚合物材料包括导电纳米颗粒。
20.如权利要求14所述的方法,其中所述多个抛光特征被形成在所述一或多个基底特征上,所述多个抛光特征具有第一高度,所述一或多个基底特征具有第二高度,其中所述第一高度大于所述第二高度。
CN202310301737.6A 2015-11-06 2016-10-19 用于结合cmp工艺的追踪数据与3d打印的cmp耗材的技术 Pending CN116197811A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/935,134 US10593574B2 (en) 2015-11-06 2015-11-06 Techniques for combining CMP process tracking data with 3D printed CMP consumables
US14/935,134 2015-11-06
PCT/US2016/057669 WO2017078933A1 (en) 2015-11-06 2016-10-19 Techniques for combining cmp process tracking data with 3d printed cmp consumables
CN201680070545.7A CN108369904B (zh) 2015-11-06 2016-10-19 用于结合cmp工艺的追踪数据与3d打印的cmp耗材的技术

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201680070545.7A Division CN108369904B (zh) 2015-11-06 2016-10-19 用于结合cmp工艺的追踪数据与3d打印的cmp耗材的技术

Publications (1)

Publication Number Publication Date
CN116197811A true CN116197811A (zh) 2023-06-02

Family

ID=58662314

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202310301737.6A Pending CN116197811A (zh) 2015-11-06 2016-10-19 用于结合cmp工艺的追踪数据与3d打印的cmp耗材的技术
CN201680070545.7A Active CN108369904B (zh) 2015-11-06 2016-10-19 用于结合cmp工艺的追踪数据与3d打印的cmp耗材的技术

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201680070545.7A Active CN108369904B (zh) 2015-11-06 2016-10-19 用于结合cmp工艺的追踪数据与3d打印的cmp耗材的技术

Country Status (6)

Country Link
US (2) US10593574B2 (zh)
JP (2) JP6940497B2 (zh)
KR (1) KR20180071368A (zh)
CN (2) CN116197811A (zh)
TW (2) TWI697384B (zh)
WO (1) WO2017078933A1 (zh)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013217422A1 (de) * 2013-09-02 2015-03-05 Carl Zeiss Industrielle Messtechnik Gmbh Koordinatenmessgerät und Verfahren zur Vermessung und mindestens teilweisen Erzeugung eines Werkstücks
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
KR102436416B1 (ko) 2014-10-17 2022-08-26 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
CN113103145B (zh) * 2015-10-30 2023-04-11 应用材料公司 形成具有期望ζ电位的抛光制品的设备与方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
CN106853610B (zh) 2015-12-08 2019-11-01 中芯国际集成电路制造(北京)有限公司 抛光垫及其监测方法和监测系统
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10930535B2 (en) 2016-12-02 2021-02-23 Applied Materials, Inc. RFID part authentication and tracking of processing components
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) * 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
JP6948878B2 (ja) 2017-08-22 2021-10-13 ラピスセミコンダクタ株式会社 半導体製造装置及び半導体基板の研磨方法
JP6985107B2 (ja) * 2017-11-06 2021-12-22 株式会社荏原製作所 研磨方法および研磨装置
WO2019129595A1 (en) 2017-12-27 2019-07-04 Solvay Specialty Polymers Usa, Llc Method for manufacturing a three-dimensional object
WO2019152222A1 (en) 2018-02-05 2019-08-08 Applied Materials, Inc. Piezo-electric end-pointing for 3d printed cmp pads
WO2019206903A1 (en) 2018-04-23 2019-10-31 Carl Zeiss Industrial Metrology, Llc Method and arrangement for producing a workpiece by using adaptive closed-loop control of additive manufacturing techniques
US11498269B2 (en) 2018-04-30 2022-11-15 Hewlett-Packard Development Company, L.P. Post-print processing of three dimensional (3D) printed objects
IT201800007903A1 (it) * 2018-08-06 2020-02-06 Mole Abrasivi Ermoli Srl Mola abrasiva e metodo di controllo per una molatrice comprendente detta mola
US11660722B2 (en) 2018-08-31 2023-05-30 Applied Materials, Inc. Polishing system with capacitive shear sensor
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
EP3887093A4 (en) * 2018-11-27 2022-08-17 3M Innovative Properties Company POLISHING PADS, AND SYSTEMS AND METHODS OF MAKING AND USE THEREOF
MX2021012071A (es) * 2019-04-03 2021-12-10 Saint Gobain Abrasives Inc Articulo abrasivo, sistema abrasivo y metodo para usarlos y formarlos.
US11851570B2 (en) 2019-04-12 2023-12-26 Applied Materials, Inc. Anionic polishing pads formed by printing processes
CN111816570A (zh) * 2019-07-05 2020-10-23 北京荷清柔创科技有限公司 柔性电子器件及其制备方法、制备装置
IT201900014214A1 (it) * 2019-08-07 2021-02-07 Technoprobe Spa Metodo di fabbricazione di sonde di contatto per teste di misura di dispositivi elettronici e relativa sonda di contatto
US11522319B2 (en) * 2020-06-08 2022-12-06 Global Inventive Consulting Inc. RFID-enabled electrical connector
US11738517B2 (en) 2020-06-18 2023-08-29 Applied Materials, Inc. Multi dispense head alignment using image processing
US11878389B2 (en) * 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
US11951590B2 (en) 2021-06-14 2024-04-09 Applied Materials, Inc. Polishing pads with interconnected pores
JP2024525537A (ja) * 2021-07-06 2024-07-12 アプライド マテリアルズ インコーポレイテッド 化学機械研磨のための音響センサの結合
CN114013028A (zh) * 2021-11-03 2022-02-08 北京理工大学 一种高光溢出效果半导体纳米晶器件微结构的构筑方法
WO2024083517A1 (de) * 2022-10-17 2024-04-25 Ernst-Abbe-Hochschule Jena Graduierte und adaptive polierwerkzeuge sowie verfahren zu deren herstellung

Family Cites Families (661)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2001911A (en) 1932-04-21 1935-05-21 Carborundum Co Abrasive articles
US3357598A (en) 1965-09-21 1967-12-12 Dole Valve Co Adjustable liquid dispenser
US3741116A (en) 1970-06-25 1973-06-26 American Screen Process Equip Vacuum belt
US4459779A (en) 1982-09-16 1984-07-17 International Business Machines Corporation Fixed abrasive grinding media
US4575330A (en) 1984-08-08 1986-03-11 Uvp, Inc. Apparatus for production of three-dimensional objects by stereolithography
US4836832A (en) 1986-08-11 1989-06-06 Minnesota Mining And Manufacturing Company Method of preparing coated abrasive having radiation curable binder
US4841680A (en) 1987-08-25 1989-06-27 Rodel, Inc. Inverted cell pad material for grinding, lapping, shaping and polishing
US4942001A (en) 1988-03-02 1990-07-17 Inc. DeSoto Method of forming a three-dimensional object by stereolithography and composition therefore
DE3808951A1 (de) 1988-03-17 1989-10-05 Basf Ag Photopolymerisierbare, zur herstellung von druckformen geeignete druckplatte
US4844144A (en) 1988-08-08 1989-07-04 Desoto, Inc. Investment casting utilizing patterns produced by stereolithography
JPH07102724B2 (ja) 1988-08-31 1995-11-08 ジューキ株式会社 印字装置
US5121329A (en) 1989-10-30 1992-06-09 Stratasys, Inc. Apparatus and method for creating three-dimensional objects
US5387380A (en) 1989-12-08 1995-02-07 Massachusetts Institute Of Technology Three-dimensional printing techniques
DE3942859A1 (de) 1989-12-23 1991-07-04 Basf Ag Verfahren zur herstellung von bauteilen
US5626919A (en) 1990-03-01 1997-05-06 E. I. Du Pont De Nemours And Company Solid imaging apparatus and method with coating station
US5096530A (en) 1990-06-28 1992-03-17 3D Systems, Inc. Resin film recoating method and apparatus
JP2929779B2 (ja) 1991-02-15 1999-08-03 トヨタ自動車株式会社 炭素被膜付撥水ガラス
EP0520393B1 (en) 1991-06-25 1996-11-27 EASTMAN KODAK COMPANY (a New Jersey corporation) Photographic element containing stress absorbing protective layer
US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5193316A (en) 1991-10-29 1993-03-16 Texas Instruments Incorporated Semiconductor wafer polishing using a hydrostatic medium
US5287663A (en) 1992-01-21 1994-02-22 National Semiconductor Corporation Polishing pad and method for polishing semiconductor wafers
US5178646A (en) 1992-01-22 1993-01-12 Minnesota Mining And Manufacturing Company Coatable thermally curable binder presursor solutions modified with a reactive diluent, abrasive articles incorporating same, and methods of making said abrasive articles
US6099394A (en) 1998-02-10 2000-08-08 Rodel Holdings, Inc. Polishing system having a multi-phase polishing substrate and methods relating thereto
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6022264A (en) 1997-02-10 2000-02-08 Rodel Inc. Polishing pad and methods relating thereto
US6746225B1 (en) 1992-11-30 2004-06-08 Bechtel Bwtx Idaho, Llc Rapid solidification processing system for producing molds, dies and related tooling
BR9307667A (pt) 1992-12-17 1999-08-31 Minnesota Mining & Mfg Suspensão apropriada para uso na produção de artigos abrasivos, abrasivo revestido, e, processo para fabricar um abrasivo revestido
JPH07297195A (ja) 1994-04-27 1995-11-10 Speedfam Co Ltd 半導体装置の平坦化方法及び平坦化装置
US5906863A (en) 1994-08-08 1999-05-25 Lombardi; John Methods for the preparation of reinforced three-dimensional bodies
JPH08132342A (ja) 1994-11-08 1996-05-28 Hitachi Ltd 半導体集積回路装置の製造装置
KR100258802B1 (ko) 1995-02-15 2000-06-15 전주범 평탄화 장치 및 그를 이용한 평탄화 방법
US6719818B1 (en) 1995-03-28 2004-04-13 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US5533923A (en) 1995-04-10 1996-07-09 Applied Materials, Inc. Chemical-mechanical polishing pad providing polishing unformity
US5645471A (en) 1995-08-11 1997-07-08 Minnesota Mining And Manufacturing Company Method of texturing a substrate using an abrasive article having multiple abrasive natures
US5605760A (en) 1995-08-21 1997-02-25 Rodel, Inc. Polishing pads
JP3324643B2 (ja) 1995-10-25 2002-09-17 日本電気株式会社 研磨パッド
US5738574A (en) 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
US5905099A (en) 1995-11-06 1999-05-18 Minnesota Mining And Manufacturing Company Heat-activatable adhesive composition
US5609517A (en) 1995-11-20 1997-03-11 International Business Machines Corporation Composite polishing pad
JP3566430B2 (ja) 1995-12-20 2004-09-15 株式会社ルネサステクノロジ 半導体装置の製造方法
US5624303A (en) 1996-01-22 1997-04-29 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
US6095084A (en) 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5778481A (en) 1996-02-15 1998-07-14 International Business Machines Corporation Silicon wafer cleaning and polishing pads
US5690540A (en) 1996-02-23 1997-11-25 Micron Technology, Inc. Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers
US6090475A (en) * 1996-05-24 2000-07-18 Micron Technology Inc. Polishing pad, methods of manufacturing and use
JP3498881B2 (ja) 1996-05-27 2004-02-23 セントラル硝子株式会社 撥水性ガラスの製法
US5976000A (en) 1996-05-28 1999-11-02 Micron Technology, Inc. Polishing pad with incompressible, highly soluble particles for chemical-mechanical planarization of semiconductor wafers
US5748434A (en) 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
GB2316414B (en) 1996-07-31 2000-10-11 Tosoh Corp Abrasive shaped article, abrasive disc and polishing method
US5795218A (en) 1996-09-30 1998-08-18 Micron Technology, Inc. Polishing pad with elongated microcolumns
US6244575B1 (en) 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
KR100210840B1 (ko) 1996-12-24 1999-07-15 구본준 기계 화학적 연마 방법 및 그 장치
US5876268A (en) 1997-01-03 1999-03-02 Minnesota Mining And Manufacturing Company Method and article for the production of optical quality surfaces on glass
WO1998030356A1 (en) 1997-01-13 1998-07-16 Rodel, Inc. Polymeric polishing pad having photolithographically induced surface pattern(s) and methods relating thereto
US5965460A (en) 1997-01-29 1999-10-12 Mac Dermid, Incorporated Polyurethane composition with (meth)acrylate end groups useful in the manufacture of polishing pads
EP0964772A1 (en) 1997-03-07 1999-12-22 Minnesota Mining And Manufacturing Company Abrasive article for providing a clear surface finish on glass
US5910471A (en) 1997-03-07 1999-06-08 Minnesota Mining And Manufacturing Company Abrasive article for providing a clear surface finish on glass
US6231629B1 (en) 1997-03-07 2001-05-15 3M Innovative Properties Company Abrasive article for providing a clear surface finish on glass
US5944583A (en) 1997-03-17 1999-08-31 International Business Machines Corporation Composite polish pad for CMP
US6682402B1 (en) 1997-04-04 2004-01-27 Rodel Holdings, Inc. Polishing pads and methods relating thereto
US6648733B2 (en) 1997-04-04 2003-11-18 Rodel Holdings, Inc. Polishing pads and methods relating thereto
US6062958A (en) 1997-04-04 2000-05-16 Micron Technology, Inc. Variable abrasive polishing pad for mechanical and chemical-mechanical planarization
US5940674A (en) 1997-04-09 1999-08-17 Massachusetts Institute Of Technology Three-dimensional product manufacture using masks
US6126532A (en) 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
WO1998047662A1 (en) 1997-04-18 1998-10-29 Cabot Corporation Polishing pad for a semiconductor substrate
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US5945058A (en) 1997-05-13 1999-08-31 3D Systems, Inc. Method and apparatus for identifying surface features associated with selected lamina of a three-dimensional object being stereolithographically formed
US5921855A (en) 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
US6273806B1 (en) 1997-05-15 2001-08-14 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
US6692338B1 (en) 1997-07-23 2004-02-17 Lsi Logic Corporation Through-pad drainage of slurry during chemical mechanical polishing
US6736714B2 (en) * 1997-07-30 2004-05-18 Praxair S.T. Technology, Inc. Polishing silicon wafers
US5919082A (en) * 1997-08-22 1999-07-06 Micron Technology, Inc. Fixed abrasive polishing pad
US6121143A (en) 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US5888121A (en) 1997-09-23 1999-03-30 Lsi Logic Corporation Controlling groove dimensions for enhanced slurry flow
US5932040A (en) 1997-10-01 1999-08-03 Bibielle S.P.A. Method for producing a ring of abrasive elements from which to form a rotary brush
US6950193B1 (en) 1997-10-28 2005-09-27 Rockwell Automation Technologies, Inc. System for monitoring substrate conditions
US6039836A (en) 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6231942B1 (en) 1998-01-21 2001-05-15 Trexel, Inc. Method and apparatus for microcellular polypropylene extrusion, and polypropylene articles produced thereby
JPH11254542A (ja) 1998-03-11 1999-09-21 Sanyo Electric Co Ltd 光造形装置のモニタリングシステム
US6228133B1 (en) 1998-05-01 2001-05-08 3M Innovative Properties Company Abrasive articles having abrasive layer bond system derived from solid, dry-coated binder precursor particles having a fusible, radiation curable component
US6106661A (en) * 1998-05-08 2000-08-22 Advanced Micro Devices, Inc. Polishing pad having a wear level indicator and system using the same
JPH11347761A (ja) 1998-06-12 1999-12-21 Mitsubishi Heavy Ind Ltd レーザによる3次元造形装置
US6122564A (en) 1998-06-30 2000-09-19 Koch; Justin Apparatus and methods for monitoring and controlling multi-layer laser cladding
US6322728B1 (en) 1998-07-10 2001-11-27 Jeneric/Pentron, Inc. Mass production of dental restorations by solid free-form fabrication methods
US6117000A (en) 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
DE19834559A1 (de) 1998-07-31 2000-02-03 Friedrich Schiller Uni Jena Bu Verfahren zur Herstellung von Werkzeugen für die Bearbeitung von Oberflächen
JP2000061817A (ja) 1998-08-24 2000-02-29 Nikon Corp 研磨パッド
US6095902A (en) 1998-09-23 2000-08-01 Rodel Holdings, Inc. Polyether-polyester polyurethane polishing pads and related methods
US6602380B1 (en) 1998-10-28 2003-08-05 Micron Technology, Inc. Method and apparatus for releasably attaching a polishing pad to a chemical-mechanical planarization machine
US6325706B1 (en) 1998-10-29 2001-12-04 Lam Research Corporation Use of zeta potential during chemical mechanical polishing for end point detection
US6176992B1 (en) 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6390890B1 (en) 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
JP3641956B2 (ja) 1998-11-30 2005-04-27 三菱住友シリコン株式会社 研磨スラリーの再生システム
US6206759B1 (en) 1998-11-30 2001-03-27 Micron Technology, Inc. Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines
US7425250B2 (en) 1998-12-01 2008-09-16 Novellus Systems, Inc. Electrochemical mechanical processing apparatus
KR100585480B1 (ko) 1999-01-21 2006-06-02 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 개선된 연마 패드 및 기판의 연마 방법
US6994607B2 (en) 2001-12-28 2006-02-07 Applied Materials, Inc. Polishing pad with window
US6179709B1 (en) 1999-02-04 2001-01-30 Applied Materials, Inc. In-situ monitoring of linear substrate polishing operations
US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
CN1345264A (zh) 1999-03-30 2002-04-17 株式会社尼康 抛光盘、抛光机、抛光方法及制造半导体器件的方法
US6217426B1 (en) 1999-04-06 2001-04-17 Applied Materials, Inc. CMP polishing pad
JP2000301450A (ja) 1999-04-19 2000-10-31 Rohm Co Ltd Cmp研磨パッドおよびそれを用いたcmp処理装置
US6213845B1 (en) 1999-04-26 2001-04-10 Micron Technology, Inc. Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same
US6338901B1 (en) 1999-05-03 2002-01-15 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6328634B1 (en) 1999-05-11 2001-12-11 Rodel Holdings Inc. Method of polishing
US6196899B1 (en) 1999-06-21 2001-03-06 Micron Technology, Inc. Polishing apparatus
JP2001018163A (ja) 1999-07-06 2001-01-23 Speedfam Co Ltd 研磨用パッド
US6319108B1 (en) 1999-07-09 2001-11-20 3M Innovative Properties Company Metal bond abrasive article comprising porous ceramic abrasive composites and method of using same to abrade a workpiece
TW480205B (en) * 1999-07-20 2002-03-21 Agere Syst Guardian Corp Engineered polishing pad for improved slurry distribution
JP2001105329A (ja) 1999-08-02 2001-04-17 Ebara Corp 研磨用砥石
US6232236B1 (en) 1999-08-03 2001-05-15 Applied Materials, Inc. Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system
US6328632B1 (en) 1999-08-31 2001-12-11 Micron Technology, Inc. Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
US6257973B1 (en) 1999-11-04 2001-07-10 Norton Company Coated abrasive discs
US6201208B1 (en) 1999-11-04 2001-03-13 Wisconsin Alumni Research Foundation Method and apparatus for plasma processing with control of ion energy distribution at the substrates
US6399501B2 (en) 1999-12-13 2002-06-04 Applied Materials, Inc. Method and apparatus for detecting polishing endpoint with optical monitoring
KR20020072548A (ko) 1999-12-14 2002-09-16 로델 홀딩스 인코포레이티드 중합체 연마 패드 또는 중합체 복합재 연마 패드의 제조방법
US6368184B1 (en) 2000-01-06 2002-04-09 Advanced Micro Devices, Inc. Apparatus for determining metal CMP endpoint using integrated polishing pad electrodes
US6241596B1 (en) 2000-01-14 2001-06-05 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing using a patterned pad
US6506097B1 (en) 2000-01-18 2003-01-14 Applied Materials, Inc. Optical monitoring in a two-step chemical mechanical polishing process
WO2001053040A1 (en) 2000-01-19 2001-07-26 Rodel Holdings, Inc. Printing of polishing pads
US7071041B2 (en) 2000-01-20 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6746311B1 (en) 2000-01-24 2004-06-08 3M Innovative Properties Company Polishing pad with release layer
US6309276B1 (en) 2000-02-01 2001-10-30 Applied Materials, Inc. Endpoint monitoring with polishing rate change
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
WO2001064396A1 (en) 2000-02-28 2001-09-07 Rodel Holdings, Inc. Polishing pad surface texture formed by solid phase droplets
KR100502268B1 (ko) 2000-03-01 2005-07-22 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 방법
US6797623B2 (en) 2000-03-09 2004-09-28 Sony Corporation Methods of producing and polishing semiconductor device and polishing apparatus
US7300619B2 (en) 2000-03-13 2007-11-27 Objet Geometries Ltd. Compositions and methods for use in three dimensional model printing
US6569373B2 (en) 2000-03-13 2003-05-27 Object Geometries Ltd. Compositions and methods for use in three dimensional model printing
US20030207959A1 (en) 2000-03-13 2003-11-06 Eduardo Napadensky Compositions and methods for use in three dimensional model printing
US8481241B2 (en) 2000-03-13 2013-07-09 Stratasys Ltd. Compositions and methods for use in three dimensional model printing
WO2001068322A1 (en) 2000-03-15 2001-09-20 Rodel Holdings, Inc. Window portion with an adjusted rate of wear
ES2230086T3 (es) 2000-03-24 2005-05-01 Voxeljet Technology Gmbh Metodo y aparato para fabricar una pieza estructural mediante la tecnica de deposicion multi-capa y moldeo macho fabricado con el metodo.
KR20010093677A (ko) 2000-03-29 2001-10-29 추후기재 향상된 슬러리 분배를 위하여 특수 설계된 연마 패드
US6313038B1 (en) 2000-04-26 2001-11-06 Micron Technology, Inc. Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
US20020058468A1 (en) 2000-05-03 2002-05-16 Eppert Stanley E. Semiconductor polishing pad
US6387289B1 (en) 2000-05-04 2002-05-14 Micron Technology, Inc. Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US8485862B2 (en) 2000-05-19 2013-07-16 Applied Materials, Inc. Polishing pad for endpoint detection and related methods
US6267641B1 (en) 2000-05-19 2001-07-31 Motorola, Inc. Method of manufacturing a semiconductor component and chemical-mechanical polishing system therefor
US6860802B1 (en) 2000-05-27 2005-03-01 Rohm And Haas Electric Materials Cmp Holdings, Inc. Polishing pads for chemical mechanical planarization
US6454634B1 (en) 2000-05-27 2002-09-24 Rodel Holdings Inc. Polishing pads for chemical mechanical planarization
US6736709B1 (en) 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
US6749485B1 (en) 2000-05-27 2004-06-15 Rodel Holdings, Inc. Hydrolytically stable grooved polishing pads for chemical mechanical planarization
JP3925041B2 (ja) 2000-05-31 2007-06-06 Jsr株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
DE60131080T2 (de) 2000-05-31 2008-07-31 Jsr Corp. Schleifmaterial
US6478914B1 (en) 2000-06-09 2002-11-12 Micron Technology, Inc. Method for attaching web-based polishing materials together on a polishing tool
US6656019B1 (en) 2000-06-29 2003-12-02 International Business Machines Corporation Grooved polishing pads and methods of use
JP2002028849A (ja) 2000-07-17 2002-01-29 Jsr Corp 研磨パッド
US20020016139A1 (en) 2000-07-25 2002-02-07 Kazuto Hirokawa Polishing tool and manufacturing method therefor
US6520834B1 (en) 2000-08-09 2003-02-18 Micron Technology, Inc. Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates
US6776699B2 (en) 2000-08-14 2004-08-17 3M Innovative Properties Company Abrasive pad for CMP
US6736869B1 (en) 2000-08-28 2004-05-18 Micron Technology, Inc. Method for forming a planarizing pad for planarization of microelectronic substrates
US6592443B1 (en) 2000-08-30 2003-07-15 Micron Technology, Inc. Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
US6638831B1 (en) 2000-08-31 2003-10-28 Micron Technology, Inc. Use of a reference fiducial on a semiconductor package to monitor and control a singulation method
JP3886712B2 (ja) 2000-09-08 2007-02-28 シャープ株式会社 半導体装置の製造方法
US6477926B1 (en) 2000-09-15 2002-11-12 Ppg Industries Ohio, Inc. Polishing pad
US6641471B1 (en) 2000-09-19 2003-11-04 Rodel Holdings, Inc Polishing pad having an advantageous micro-texture and methods relating thereto
WO2002026445A1 (en) 2000-09-29 2002-04-04 Strasbaugh, Inc. Polishing pad with built-in optical sensor
AU2002230607B2 (en) 2000-11-09 2006-06-29 3M Innovative Properties Company Weather resistant, ink jettable, radiation curable, fluid compositions particularly suitable for outdoor applications
JP2002151447A (ja) 2000-11-13 2002-05-24 Asahi Kasei Corp 研磨パッド
US6684704B1 (en) 2002-09-12 2004-02-03 Psiloquest, Inc. Measuring the surface properties of polishing pads using ultrasonic reflectance
CN100496896C (zh) 2000-12-01 2009-06-10 东洋橡膠工业株式会社 研磨垫
JP2002200555A (ja) 2000-12-28 2002-07-16 Ebara Corp 研磨工具および該研磨工具を具備したポリッシング装置
US6407669B1 (en) 2001-02-02 2002-06-18 3M Innovative Properties Company RFID tag device and method of manufacturing
GB0103754D0 (en) 2001-02-15 2001-04-04 Vantico Ltd Three-dimensional structured printing
US20020112632A1 (en) 2001-02-21 2002-08-22 Creo Ltd Method for supporting sensitive workpieces during processing
US6840843B2 (en) 2001-03-01 2005-01-11 Cabot Microelectronics Corporation Method for manufacturing a polishing pad having a compressed translucent region
US6811680B2 (en) 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7955693B2 (en) 2001-04-20 2011-06-07 Tolland Development Company, Llc Foam composition roller brush with embedded mandrel
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6811937B2 (en) 2001-06-21 2004-11-02 Dsm Desotech, Inc. Radiation-curable resin composition and rapid prototyping process using the same
US6544373B2 (en) 2001-07-26 2003-04-08 United Microelectronics Corp. Polishing pad for a chemical mechanical polishing process
US6586494B2 (en) 2001-08-08 2003-07-01 Spectra Group Limited, Inc. Radiation curable inkjet composition
KR100646702B1 (ko) 2001-08-16 2006-11-17 에스케이씨 주식회사 홀 및/또는 그루브로 형성된 화학적 기계적 연마패드
KR20030020658A (ko) 2001-09-04 2003-03-10 삼성전자주식회사 화학적물리적 연마장치의 연마패드 콘디셔닝 디스크
US6866807B2 (en) 2001-09-21 2005-03-15 Stratasys, Inc. High-precision modeling filament
TWI222390B (en) 2001-11-13 2004-10-21 Toyo Boseki Polishing pad and its production method
JP4077192B2 (ja) 2001-11-30 2008-04-16 株式会社東芝 化学機械研磨方法および半導体装置の製造方法
US6599765B1 (en) 2001-12-12 2003-07-29 Lam Research Corporation Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
US6838149B2 (en) 2001-12-13 2005-01-04 3M Innovative Properties Company Abrasive article for the deposition and polishing of a conductive material
JP2003188124A (ja) 2001-12-14 2003-07-04 Rodel Nitta Co 研磨布
EP1326273B1 (en) 2001-12-28 2012-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20030134581A1 (en) 2002-01-11 2003-07-17 Wang Hsing Maw Device for chemical mechanical polishing
KR100442873B1 (ko) 2002-02-28 2004-08-02 삼성전자주식회사 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법
CN1445060A (zh) 2002-03-07 2003-10-01 株式会社荏原制作所 抛光装置
JP2003303793A (ja) 2002-04-12 2003-10-24 Hitachi Ltd 研磨装置および半導体装置の製造方法
US6773474B2 (en) 2002-04-19 2004-08-10 3M Innovative Properties Company Coated abrasive article
JP4693024B2 (ja) 2002-04-26 2011-06-01 東洋ゴム工業株式会社 研磨材
US20050194681A1 (en) 2002-05-07 2005-09-08 Yongqi Hu Conductive pad with high abrasion
US6815570B1 (en) 2002-05-07 2004-11-09 Uop Llc Shaped catalysts for transalkylation of aromatics for enhanced xylenes production
US20050276967A1 (en) 2002-05-23 2005-12-15 Cabot Microelectronics Corporation Surface textured microporous polishing pads
US6913517B2 (en) 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
TWI250572B (en) 2002-06-03 2006-03-01 Jsr Corp Polishing pad and multi-layer polishing pad
DE10224981B4 (de) 2002-06-05 2004-08-19 Generis Gmbh Verfahren zum schichtweisen Aufbau von Modellen
WO2003103959A1 (en) 2002-06-07 2003-12-18 Praxair S.T. Technology, Inc. Controlled penetration subpad
JP3801100B2 (ja) 2002-06-07 2006-07-26 Jsr株式会社 光硬化造形装置、光硬化造形方法及び光硬化造形システム
US8602851B2 (en) 2003-06-09 2013-12-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled penetration subpad
EP1375617A1 (en) 2002-06-19 2004-01-02 3M Innovative Properties Company Radiation-curable, solvent-free and printable precursor of a pressure-sensitive adhesive
US7169014B2 (en) 2002-07-18 2007-01-30 Micron Technology, Inc. Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces
KR101016081B1 (ko) 2002-07-26 2011-02-17 닛토덴코 가부시키가이샤 점착 시트와 그의 제조방법, 상기 점착 시트의 사용방법,및 상기 점착 시트에 사용되는 다층 시트와 그의 제조방법
TWI228768B (en) 2002-08-08 2005-03-01 Jsr Corp Processing method of polishing pad for semiconductor wafer and polishing pad for semiconductor wafer
KR100465649B1 (ko) 2002-09-17 2005-01-13 한국포리올 주식회사 일체형 연마 패드 및 그 제조 방법
US7579071B2 (en) 2002-09-17 2009-08-25 Korea Polyol Co., Ltd. Polishing pad containing embedded liquid microelements and method of manufacturing the same
US6896765B2 (en) 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US20040058623A1 (en) 2002-09-20 2004-03-25 Lam Research Corporation Polishing media for chemical mechanical planarization (CMP)
US7267607B2 (en) 2002-10-28 2007-09-11 Cabot Microelectronics Corporation Transparent microporous materials for CMP
US7435165B2 (en) 2002-10-28 2008-10-14 Cabot Microelectronics Corporation Transparent microporous materials for CMP
US7311862B2 (en) 2002-10-28 2007-12-25 Cabot Microelectronics Corporation Method for manufacturing microporous CMP materials having controlled pore size
WO2004039531A2 (en) 2002-10-31 2004-05-13 Ehsan Toyserkani System and method for closed-loop control of laser cladding by powder injection
JP2004153193A (ja) 2002-11-01 2004-05-27 Disco Abrasive Syst Ltd 半導体ウエーハの処理方法
DE10253445A1 (de) 2002-11-16 2004-06-03 Adam Opel Ag Verfahren und Vorrichtung zum Abdichten und Aufpumpen von Reifen bei Pannen sowie Dichtmittelbehälter als auch Adapter hierfür
KR101047933B1 (ko) 2002-11-27 2011-07-11 도요 고무 고교 가부시키가이샤 연마 패드 및 반도체 장치의 제조 방법
JP2004235446A (ja) 2003-01-30 2004-08-19 Toyobo Co Ltd 研磨パッド
JP4659338B2 (ja) 2003-02-12 2011-03-30 Hoya株式会社 情報記録媒体用ガラス基板の製造方法並びにそれに使用する研磨パッド
WO2004077511A2 (en) 2003-02-24 2004-09-10 The Regents Of The University Of Colorado (meth)acrylic and (meth)acrylamide monomers, polymerizable compositions, and polymers obtained
US7104773B2 (en) 2003-03-07 2006-09-12 Ricoh Printing Systems, Ltd. Three-dimensional laminating molding device
DE10310385B4 (de) 2003-03-07 2006-09-21 Daimlerchrysler Ag Verfahren zur Herstellung von dreidimensionalen Körpern mittels pulverbasierter schichtaufbauender Verfahren
JP2004281685A (ja) 2003-03-14 2004-10-07 Mitsubishi Electric Corp 半導体基板の研磨用パッドおよび半導体基板の研磨方法
US7377840B2 (en) 2004-07-21 2008-05-27 Neopad Technologies Corporation Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US20060189269A1 (en) 2005-02-18 2006-08-24 Roy Pradip K Customized polishing pads for CMP and methods of fabrication and use thereof
AU2004225931A1 (en) 2003-03-25 2004-10-14 Neopad Technologies Corporation Chip customized polish pads for chemical mechanical planarization (CMP)
US9278424B2 (en) 2003-03-25 2016-03-08 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US8864859B2 (en) 2003-03-25 2014-10-21 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
KR100661444B1 (ko) 2003-04-25 2006-12-27 제이에스알 가부시끼가이샤 연마 패드 및 화학 기계 연마 방법
US6783436B1 (en) 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
WO2004100242A1 (ja) 2003-05-09 2004-11-18 Sanyo Chemical Industries, Ltd. Cmpプロセス用研磨液及び研磨方法
ES2376237T3 (es) 2003-05-21 2012-03-12 Z Corporation Sistema de material en polvo termopl�?stico para modelos de apariencia a partir de sistemas de impresión en 3d.
IL156094A0 (en) 2003-05-25 2003-12-23 J G Systems Inc Fixed abrasive cmp pad with built-in additives
US7435161B2 (en) 2003-06-17 2008-10-14 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US6998166B2 (en) 2003-06-17 2006-02-14 Cabot Microelectronics Corporation Polishing pad with oriented pore structure
JP4130614B2 (ja) 2003-06-18 2008-08-06 株式会社東芝 半導体装置の製造方法
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US20050032464A1 (en) 2003-08-07 2005-02-10 Swisher Robert G. Polishing pad having edge surface treatment
CN1863645B (zh) 2003-08-08 2011-11-30 安格斯公司 用于制作浇注在可旋转基体上的整体式多孔垫的方法和材料
US7120512B2 (en) 2003-08-25 2006-10-10 Hewlett-Packard Development Company, L.P. Method and a system for solid freeform fabricating using non-reactive powder
EP1661690A4 (en) 2003-08-27 2009-08-12 Fujifilm Corp METHOD FOR PRODUCING A THREE-DIMENSIONAL MODEL
KR100590202B1 (ko) 2003-08-29 2006-06-15 삼성전자주식회사 연마 패드 및 그 형성방법
JP2005074614A (ja) 2003-09-03 2005-03-24 Nitta Haas Inc 研磨パッドの製造方法および研磨パッド
JP2005085917A (ja) 2003-09-08 2005-03-31 Sharp Corp プラズマプロセス装置
JP2005093785A (ja) 2003-09-18 2005-04-07 Toshiba Corp Cmp用スラリー、研磨方法、および半導体装置の製造方法
KR100640998B1 (ko) 2003-09-19 2006-11-02 엘지.필립스 엘시디 주식회사 액정표시장치용 브라켓 구조
US6855588B1 (en) 2003-10-07 2005-02-15 United Microelectronics Corp. Method of fabricating a double gate MOSFET device
GB0323462D0 (en) 2003-10-07 2003-11-05 Fujifilm Electronic Imaging Providing a surface layer or structure on a substrate
US20050109371A1 (en) 2003-10-27 2005-05-26 Applied Materials, Inc. Post CMP scrubbing of substrates
JP2005131732A (ja) 2003-10-30 2005-05-26 Ebara Corp 研磨装置
WO2005043132A1 (en) 2003-10-31 2005-05-12 Applied Materials, Inc. Polishing endpoint detection system and method using friction sensor
US7264641B2 (en) 2003-11-10 2007-09-04 Cabot Microelectronics Corporation Polishing pad comprising biodegradable polymer
US20050101228A1 (en) 2003-11-10 2005-05-12 Cabot Microelectronics Corporation Polishing pad comprising biodegradable polymer
JP2005150235A (ja) 2003-11-12 2005-06-09 Three M Innovative Properties Co 半導体表面保護シート及び方法
US7125318B2 (en) 2003-11-13 2006-10-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad having a groove arrangement for reducing slurry consumption
JP4555559B2 (ja) 2003-11-25 2010-10-06 富士紡ホールディングス株式会社 研磨布及び研磨布の製造方法
US6984163B2 (en) 2003-11-25 2006-01-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with high optical transmission window
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US6843711B1 (en) 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
US20050153634A1 (en) 2004-01-09 2005-07-14 Cabot Microelectronics Corporation Negative poisson's ratio material-containing CMP polishing pad
US20050171224A1 (en) 2004-02-03 2005-08-04 Kulp Mary J. Polyurethane polishing pad
US7132033B2 (en) 2004-02-27 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming a layered polishing pad
US7731568B2 (en) 2004-03-11 2010-06-08 Toyo Tire & Rubber Co., Ltd. Polishing pad and semiconductor device manufacturing method
US20050208234A1 (en) 2004-03-19 2005-09-22 Agfa-Gevaert Ink-jet recording material
US7195544B2 (en) 2004-03-23 2007-03-27 Cabot Microelectronics Corporation CMP porous pad with component-filled pores
US7204742B2 (en) 2004-03-25 2007-04-17 Cabot Microelectronics Corporation Polishing pad comprising hydrophobic region and endpoint detection port
US6955588B1 (en) 2004-03-31 2005-10-18 Lam Research Corporation Method of and platen for controlling removal rate characteristics in chemical mechanical planarization
JP2005294661A (ja) 2004-04-02 2005-10-20 Hitachi Chem Co Ltd 研磨パッド及びそれを用いる研磨方法
JP2004243518A (ja) 2004-04-08 2004-09-02 Toshiba Corp 研摩装置
US20050227590A1 (en) 2004-04-09 2005-10-13 Chien-Min Sung Fixed abrasive tools and associated methods
TWI293266B (en) 2004-05-05 2008-02-11 Iv Technologies Co Ltd A single-layer polishing pad and a method of producing the same
US20070009606A1 (en) 2004-05-12 2007-01-11 Serdy James G Manufacturing process, such as three dimensional printing, including binding of water-soluble material followed by softening and flowing and forming films of organic-solvent-soluble material
US20050260939A1 (en) 2004-05-18 2005-11-24 Saint-Gobain Abrasives, Inc. Brazed diamond dressing tool
EP1747878A4 (en) 2004-05-20 2010-10-13 Bridgestone Corp SHUTTERING DEVICE OF SEALING AGENT, METHOD FOR POURING A SEALING AGENT AND APPARATUS FOR PUMPING SEALING AGENT
US20050261150A1 (en) 2004-05-21 2005-11-24 Battelle Memorial Institute, A Part Interest Reactive fluid systems for removing deposition materials and methods for using same
US7438795B2 (en) 2004-06-10 2008-10-21 Cabot Microelectronics Corp. Electrochemical-mechanical polishing system
US7252871B2 (en) 2004-06-16 2007-08-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad having a pressure relief channel
US7582127B2 (en) 2004-06-16 2009-09-01 Cabot Microelectronics Corporation Polishing composition for a tungsten-containing substrate
WO2005123335A1 (en) 2004-06-21 2005-12-29 Ebara Corporation Polishing apparatus and polishing method
JP4133945B2 (ja) 2004-06-28 2008-08-13 住友ゴム工業株式会社 タイヤのパンクシーリング剤送給、抜取り装置
WO2006003697A1 (ja) 2004-06-30 2006-01-12 Toho Engineering Kabushiki Kaisha 研磨パッドおよびその製造方法
US20060014475A1 (en) 2004-07-15 2006-01-19 Disco Corporation Grindstone tool
US7709053B2 (en) 2004-07-29 2010-05-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing of polymer-coated particles for chemical mechanical polishing
WO2006020685A2 (en) 2004-08-11 2006-02-23 Cornell Research Foundation, Inc. Modular fabrication systems and methods
US7153191B2 (en) 2004-08-20 2006-12-26 Micron Technology, Inc. Polishing liquids for activating and/or conditioning fixed abrasive polishing pads, and associated systems and methods
US8075372B2 (en) 2004-09-01 2011-12-13 Cabot Microelectronics Corporation Polishing pad with microporous regions
DE102004042911A1 (de) 2004-09-02 2006-03-09 Michael Stehle Vorrichtung zum Ausbringen von Luft- und/oder Reifendichtmittel
US20060079159A1 (en) 2004-10-08 2006-04-13 Markus Naujok Chemical mechanical polish with multi-zone abrasive-containing matrix
US20060089094A1 (en) 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060096179A1 (en) 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
WO2006057720A1 (en) 2004-11-29 2006-06-01 Rajeev Bajaj Method and apparatus for improved chemical mechanical planarization pad with pressure control and process monitor
WO2006057713A2 (en) 2004-11-29 2006-06-01 Rajeev Bajaj Electro-method and apparatus for improved chemical mechanical planarization pad with uniform polish performance
US7815778B2 (en) 2005-11-23 2010-10-19 Semiquest Inc. Electro-chemical mechanical planarization pad with uniform polish performance
US7846008B2 (en) 2004-11-29 2010-12-07 Semiquest Inc. Method and apparatus for improved chemical mechanical planarization and CMP pad
CN102554766B (zh) 2004-12-10 2014-11-05 东洋橡胶工业株式会社 研磨垫及研磨垫的制造方法
US7059950B1 (en) 2004-12-14 2006-06-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP polishing pad having grooves arranged to improve polishing medium utilization
US7059949B1 (en) 2004-12-14 2006-06-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having an overlapping stepped groove arrangement
US7182677B2 (en) 2005-01-14 2007-02-27 Applied Materials, Inc. Chemical mechanical polishing pad for controlling polishing slurry distribution
TWI385050B (zh) 2005-02-18 2013-02-11 Nexplanar Corp 用於cmp之特製拋光墊及其製造方法及其用途
US7875091B2 (en) 2005-02-22 2011-01-25 Saint-Gobain Abrasives, Inc. Rapid tooling system and methods for manufacturing abrasive articles
US7524345B2 (en) 2005-02-22 2009-04-28 Saint-Gobain Abrasives, Inc. Rapid tooling system and methods for manufacturing abrasive articles
JP2006231464A (ja) 2005-02-24 2006-09-07 Nitta Haas Inc 研磨パッド
US7829000B2 (en) 2005-02-25 2010-11-09 Hewlett-Packard Development Company, L.P. Core-shell solid freeform fabrication
TWI410314B (zh) 2005-04-06 2013-10-01 羅門哈斯電子材料Cmp控股公司 藉由反應-射出成形製造多孔化學機械研磨墊之裝置
EP1710324B1 (en) 2005-04-08 2008-12-03 STMicroelectronics S.r.l. PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US7435364B2 (en) 2005-04-11 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for forming a porous polishing pad
JP2006305650A (ja) 2005-04-26 2006-11-09 Inoac Corp 研磨用吸着パッド及びその製造方法
US8393934B2 (en) 2006-11-16 2013-03-12 Chien-Min Sung CMP pad dressers with hybridized abrasive surface and related methods
US8398466B2 (en) 2006-11-16 2013-03-19 Chien-Min Sung CMP pad conditioners with mosaic abrasive segments and associated methods
KR100949560B1 (ko) 2005-05-17 2010-03-25 도요 고무 고교 가부시키가이샤 연마 패드
KR100721196B1 (ko) 2005-05-24 2007-05-23 주식회사 하이닉스반도체 연마패드 및 이를 이용한 화학적기계적연마장치
JP2007005612A (ja) 2005-06-24 2007-01-11 Hitachi Chem Co Ltd 研磨パッド及びその製造方法及び基板の研磨方法
CN1897226A (zh) 2005-07-11 2007-01-17 上海华虹Nec电子有限公司 一种化学机械抛光机
JP4512529B2 (ja) 2005-07-15 2010-07-28 住友精密工業株式会社 エッチング方法及びエッチング装置
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
KR100727485B1 (ko) 2005-08-09 2007-06-13 삼성전자주식회사 연마 패드 및 이를 제조하는 방법, 그리고 화학적 기계적 연마 장치 및 방법
US20070117393A1 (en) 2005-11-21 2007-05-24 Alexander Tregub Hardened porous polymer chemical mechanical polishing (CMP) pad
JP4868840B2 (ja) 2005-11-30 2012-02-01 Jsr株式会社 半導体装置の製造方法
CN1851896A (zh) 2005-12-05 2006-10-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种静电卡盘
US20070128991A1 (en) 2005-12-07 2007-06-07 Yoon Il-Young Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same
US20070149094A1 (en) 2005-12-28 2007-06-28 Choi Jae Y Monitoring Device of Chemical Mechanical Polishing Apparatus
US7357703B2 (en) 2005-12-28 2008-04-15 Jsr Corporation Chemical mechanical polishing pad and chemical mechanical polishing method
KR20080087012A (ko) 2006-01-25 2008-09-29 제이에스알 가부시끼가이샤 화학 기계 연마 패드 및 그의 제조 방법
US7935276B2 (en) 2006-02-09 2011-05-03 Headwaters Technology Innovation Llc Polymeric materials incorporating carbon nanostructures
JP2009527914A (ja) 2006-02-23 2009-07-30 ピコデオン エルティーディー オイ 太陽電池ならびに太陽電池を生産する装置および方法
JP2007235001A (ja) 2006-03-03 2007-09-13 Mitsui Chemicals Inc 研磨用スラリー
US20070204420A1 (en) 2006-03-06 2007-09-06 Hornby David M Polishing pad and method of making
US7517488B2 (en) 2006-03-08 2009-04-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming a chemical mechanical polishing pad utilizing laser sintering
US20070212979A1 (en) 2006-03-09 2007-09-13 Rimpad Tech Ltd. Composite polishing pad
WO2007111996A2 (en) * 2006-03-24 2007-10-04 Clemson University Conducting polymer ink
US20070235133A1 (en) 2006-03-29 2007-10-11 Strasbaugh Devices and methods for measuring wafer characteristics during semiconductor wafer polishing
US20070235904A1 (en) 2006-04-06 2007-10-11 Saikin Alan H Method of forming a chemical mechanical polishing pad utilizing laser sintering
FR2900411B1 (fr) 2006-04-27 2008-08-29 Coatex Sas Procede de traitement de matieres minerales par des polymeres amphoteres,matieres minerales obtenues,leur utilisation comme agent reducteur de la quantite de colloides dans la fabrication de papier.
US7445847B2 (en) 2006-05-25 2008-11-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US7169030B1 (en) 2006-05-25 2007-01-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
EP2032345B1 (en) 2006-06-20 2010-05-05 Katholieke Universiteit Leuven Procedure and apparatus for in-situ monitoring and feedback control of selective laser powder processing
US7840305B2 (en) * 2006-06-28 2010-11-23 3M Innovative Properties Company Abrasive articles, CMP monitoring system and method
US20080220702A1 (en) 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
JP5186738B2 (ja) 2006-07-10 2013-04-24 富士通セミコンダクター株式会社 研磨パッドの製造方法及び被研磨体の研磨方法
TWI409136B (zh) 2006-07-19 2013-09-21 Innopad Inc 表面具微溝槽之化學機械平坦化墊
KR100804275B1 (ko) 2006-07-24 2008-02-18 에스케이씨 주식회사 고분자 쉘로 둘러싸인 액상 유기물 코어를 포함하는 cmp연마패드 및 그 제조방법
US7267610B1 (en) 2006-08-30 2007-09-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having unevenly spaced grooves
US7300340B1 (en) 2006-08-30 2007-11-27 Rohm and Haas Electronics Materials CMP Holdings, Inc. CMP pad having overlaid constant area spiral grooves
DE112007002066B4 (de) 2006-09-06 2019-10-17 Nitta Haas Inc. Polierkissen
JP2008084504A (ja) 2006-09-29 2008-04-10 Hitachi Ltd 光ディスク装置および光ディスクの再生方法
US7382959B1 (en) 2006-10-13 2008-06-03 Hrl Laboratories, Llc Optically oriented three-dimensional polymer microstructures
US7234224B1 (en) 2006-11-03 2007-06-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Curved grooving of polishing pads
US7648645B2 (en) 2006-11-08 2010-01-19 3M Innovative Properties Company Pre-polymer formulations for liquid crystal displays
US7371160B1 (en) 2006-12-21 2008-05-13 Rohm And Haas Electronic Materials Cmp Holdings Inc. Elastomer-modified chemical mechanical polishing pad
EP2097247B1 (en) 2006-12-21 2016-03-09 Agfa Graphics NV 3d-inkjet printing methods
US7438636B2 (en) 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US7497885B2 (en) 2006-12-22 2009-03-03 3M Innovative Properties Company Abrasive articles with nanoparticulate fillers and method for making and using them
US8083820B2 (en) 2006-12-22 2011-12-27 3M Innovative Properties Company Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same
US7520798B2 (en) 2007-01-31 2009-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to reduce slurry consumption
US7311590B1 (en) 2007-01-31 2007-12-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to retain slurry on the pad texture
WO2008093850A1 (ja) 2007-02-01 2008-08-07 Kuraray Co., Ltd. 研磨パッド及び研磨パッドの製造方法
EP2654089A3 (en) 2007-02-16 2015-08-12 Nanogram Corporation Solar cell structures, photovoltaic modules and corresponding processes
JP5021669B2 (ja) 2007-03-20 2012-09-12 株式会社クラレ 研磨パッド用クッションおよびそれを用いた研磨パッド
JP4798713B2 (ja) 2007-03-26 2011-10-19 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 研磨パッドの製造方法
JP4954762B2 (ja) 2007-03-27 2012-06-20 東洋ゴム工業株式会社 ポリウレタン発泡体の製造方法
US9536711B2 (en) 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US8784723B2 (en) 2007-04-01 2014-07-22 Stratasys Ltd. Method and system for three-dimensional fabrication
US20090011679A1 (en) 2007-04-06 2009-01-08 Rajeev Bajaj Method of removal profile modulation in cmp pads
FR2915016B1 (fr) 2007-04-10 2009-06-05 Siemens Vdo Automotive Sas Systeme de creation automatisee d'une interface logicielle
US8067814B2 (en) 2007-06-01 2011-11-29 Panasonic Corporation Semiconductor device and method of manufacturing the same
US8562389B2 (en) 2007-06-08 2013-10-22 Applied Materials, Inc. Thin polishing pad with window and molding process
US7455571B1 (en) 2007-06-20 2008-11-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Window polishing pad
US20080314878A1 (en) 2007-06-22 2008-12-25 General Electric Company Apparatus and method for controlling a machining system
US8563619B2 (en) 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
US7758764B2 (en) 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US7862320B2 (en) 2007-07-17 2011-01-04 Seiko Epson Corporation Three-dimensional object forming apparatus and method for forming three dimensional object
US8047899B2 (en) 2007-07-26 2011-11-01 Macronix International Co., Ltd. Pad and method for chemical mechanical polishing
US7635290B2 (en) 2007-08-15 2009-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Interpenetrating network for chemical mechanical polishing
US7517277B2 (en) 2007-08-16 2009-04-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Layered-filament lattice for chemical mechanical polishing
US7828634B2 (en) 2007-08-16 2010-11-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Interconnected-multi-element-lattice polishing pad
CN101376234B (zh) 2007-08-28 2013-05-29 侯家祥 一种研磨工具磨料颗粒有序排列的方法
WO2009032768A2 (en) 2007-09-03 2009-03-12 Semiquest, Inc. Polishing pad
KR101232442B1 (ko) 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
US8142869B2 (en) 2007-09-27 2012-03-27 Toyoda Gosei Co., Ltd. Coated base fabric for airbags
JP5078527B2 (ja) 2007-09-28 2012-11-21 富士紡ホールディングス株式会社 研磨布
FR2921667B1 (fr) 2007-10-01 2012-11-09 Saint Gobain Abrasives Inc Composition resinique liquide pour articles abrasifs
JP5143528B2 (ja) 2007-10-25 2013-02-13 株式会社クラレ 研磨パッド
US8491360B2 (en) 2007-10-26 2013-07-23 Innopad, Inc. Three-dimensional network in CMP pad
US20090133716A1 (en) 2007-10-29 2009-05-28 Wai Mun Lee Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions
US8388410B2 (en) * 2007-11-05 2013-03-05 P.R. Hoffman Machine Products, Inc. RFID-containing carriers used for silicon wafer quality
JP2009129970A (ja) 2007-11-20 2009-06-11 Ebara Corp 研磨装置及び研磨方法
DE102007056984A1 (de) 2007-11-27 2009-05-28 Eos Gmbh Electro Optical Systems Verfahren zum Herstellen eines dreidimensionalen Objekts mittels Lasersintern
US8377623B2 (en) 2007-11-27 2013-02-19 3D Systems, Inc. Photocurable resin composition for producing three dimensional articles having high clarity
CN101925441B (zh) 2007-12-31 2013-08-14 3M创新有限公司 经等离子处理的磨料制品及其制造方法
JP2011508462A (ja) 2007-12-31 2011-03-10 イノパッド,インコーポレイテッド 化学的機械的平坦化パッド
JP5248152B2 (ja) 2008-03-12 2013-07-31 東洋ゴム工業株式会社 研磨パッド
US9180570B2 (en) 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
EP2261011A4 (en) 2008-03-25 2014-04-30 Sumitomo Rubber Ind REPAIR TIRE FOR TIRE TENSIONS
JP5226359B2 (ja) 2008-04-02 2013-07-03 株式会社クラレ 研磨パッド用クッションおよびそれを用いた研磨パッド
US8292592B2 (en) 2008-04-02 2012-10-23 United Technologies Corporation Nosecone bolt access and aerodynamic leakage baffle
JP2011517111A (ja) 2008-04-11 2011-05-26 イノパッド,インコーポレイテッド ボイドネットワークを有する化学機械的平坦化パッド
KR101618273B1 (ko) 2008-04-29 2016-05-04 세미퀘스트, 인코포레이티드 연마 패드 조성물, 및 이의 제조 방법 및 용도
WO2009145069A1 (ja) 2008-05-26 2009-12-03 ソニー株式会社 造形装置および造形方法
TW201005825A (en) 2008-05-30 2010-02-01 Panasonic Corp Plasma processing apparatus and method
US20090308739A1 (en) 2008-06-17 2009-12-17 Applied Materials, Inc. Wafer processing deposition shielding components
TWM347669U (en) 2008-06-19 2008-12-21 Bestac Advanced Material Co Ltd Polishing pad and polishing device
CN101612722A (zh) 2008-06-25 2009-12-30 三芳化学工业股份有限公司 抛光垫及其制造方法
WO2009158665A1 (en) 2008-06-26 2009-12-30 3M Innovative Properties Company Polishing pad with porous elements and method of making and using the same
US8282866B2 (en) 2008-06-30 2012-10-09 Seiko Epson Corporation Method and device for forming three-dimensional model, sheet material processing method, and sheet material processing device
US20100011672A1 (en) 2008-07-16 2010-01-21 Kincaid Don H Coated abrasive article and method of making and using the same
CN102159361B (zh) * 2008-07-18 2014-11-05 3M创新有限公司 具有浮动单元的抛光垫以及制造和使用该抛光垫的方法
US20140034239A1 (en) 2008-07-23 2014-02-06 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode
US20140069584A1 (en) 2008-07-23 2014-03-13 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US20100018648A1 (en) 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
CN101642898B (zh) 2008-08-06 2011-09-14 财团法人工业技术研究院 抛光垫及其形成方法以及抛光方法
US20110171890A1 (en) 2008-08-08 2011-07-14 Kuraray Co., Ltd. Polishing pad and method for manufacturing the polishing pad
KR20100028294A (ko) 2008-09-04 2010-03-12 주식회사 코오롱 연마패드 및 그의 제조방법
EP2329519B1 (en) 2008-09-26 2013-10-23 Rhodia Opérations Abrasive compositions for chemical mechanical polishing and methods for using same
US8118641B2 (en) 2009-03-04 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having window with integral identification feature
TW201016387A (en) * 2008-10-22 2010-05-01 jian-min Song CMP Pad Dressers with Hybridized abrasive surface and related methods
US20100112919A1 (en) 2008-11-03 2010-05-06 Applied Materials, Inc. Monolithic linear polishing sheet
CN102224768A (zh) * 2008-11-25 2011-10-19 Kovio股份有限公司 印刷天线, 制作印刷天线之方法, 以及包含印刷天线之设备
US8292692B2 (en) 2008-11-26 2012-10-23 Semiquest, Inc. Polishing pad with endpoint window and systems and method using the same
DE102008060046A1 (de) 2008-12-02 2010-06-10 Eos Gmbh Electro Optical Systems Verfahren zum Bereitstellen einer identifizierbaren Pulvermenge und Verfahren zur Herstellung eines Objekts
US20100140850A1 (en) 2008-12-04 2010-06-10 Objet Geometries Ltd. Compositions for 3D printing
DE102008061311A1 (de) 2008-12-11 2010-06-24 Doukas Ag Vorrichtung zum Fördern eines Gases
CN101428404A (zh) 2008-12-22 2009-05-13 南京航空航天大学 固结磨料研磨抛光垫及其制备方法
US8057282B2 (en) 2008-12-23 2011-11-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate polishing method
US8062103B2 (en) 2008-12-23 2011-11-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate groove pattern
EP2382651A4 (en) 2009-01-27 2013-01-16 Innopad Inc CHEMICAL PLANARIZATION BUFFER COMPRISING PATTERNED STRUCTURAL DOMAINS
US8053487B2 (en) 2009-01-30 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Multifunctional acrylates used as cross-linkers in dental and biomedical self-etching bonding adhesives
WO2010123744A2 (en) 2009-04-23 2010-10-28 Cabot Microelectronics Corporation Cmp porous pad with particles in a polymeric matrix
CN201483382U (zh) 2009-05-14 2010-05-26 贝达先进材料股份有限公司 研磨垫以及研磨装置
CN102448669B (zh) 2009-05-27 2014-12-10 罗杰斯公司 抛光垫、其聚氨酯层及抛光硅晶片的方法
JP5357639B2 (ja) 2009-06-24 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
KR101750775B1 (ko) 2009-06-29 2017-06-26 디아이씨 가부시끼가이샤 연마 패드용 2액형 우레탄 수지 조성물, 폴리우레탄 연마 패드, 및 폴리우레탄 연마 패드의 제조 방법
JP2012533888A (ja) 2009-07-16 2012-12-27 キャボット マイクロエレクトロニクス コーポレイション 溝付きcmp研磨pad
TWI535527B (zh) 2009-07-20 2016-06-01 智勝科技股份有限公司 研磨方法、研磨墊與研磨系統
US8676537B2 (en) 2009-08-07 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Portable wireless sensor
US8712571B2 (en) 2009-08-07 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for wireless transmission of diagnostic information
US8889232B2 (en) 2009-08-20 2014-11-18 Electronics For Imaging, Inc. Radiation curable ink compositions
TWI410299B (zh) 2009-08-24 2013-10-01 Bestac Advanced Material Co Ltd 研磨墊與其應用及其製造方法
US8697576B2 (en) 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
EP3479933A1 (en) 2009-09-17 2019-05-08 Sciaky Inc. Electron beam layer manufacturing apparatus
EP2489699B1 (en) 2009-10-16 2014-07-16 Posco Radiation curable resin composition, and fingerprint-resistant resin composition containing same
EP2498935B1 (en) 2009-11-13 2015-04-15 Sciaky Inc. Process for layer manufacturing a three-dimensional work piece using scanning electron monitored with closed loop control
JP5496630B2 (ja) 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
US20130012108A1 (en) 2009-12-22 2013-01-10 Naichao Li Polishing pad and method of making the same
US8853082B2 (en) 2009-12-28 2014-10-07 Hitachi Chemical Company, Ltd. Polishing liquid for CMP and polishing method using the same
WO2011082156A2 (en) 2009-12-30 2011-07-07 3M Innovative Properties Company Organic particulate loaded polishing pads and method of making and using the same
SG181678A1 (en) 2009-12-30 2012-07-30 3M Innovative Properties Co Polishing pads including phase-separated polymer blend and method of making and using the same
US9017140B2 (en) 2010-01-13 2015-04-28 Nexplanar Corporation CMP pad with local area transparency
CN102133734B (zh) 2010-01-21 2015-02-04 智胜科技股份有限公司 具有侦测窗的研磨垫及其制造方法
US9089943B2 (en) 2010-01-29 2015-07-28 Ronald Lipson Composite pads for buffing and polishing painted vehicle body surfaces and other applications
DE102010007401A1 (de) 2010-02-03 2011-08-04 Kärcher Futuretech GmbH, 71364 Vorrichtung und Verfahren zum automatisierten Formen und Abfüllen von Behältern
SG183419A1 (en) 2010-02-22 2012-09-27 Entegris Inc Post-cmp cleaning brush
KR20110100080A (ko) 2010-03-03 2011-09-09 삼성전자주식회사 화학적 기계적 연마 공정용 연마 패드 및 이를 포함하는 화학적 기계적 연마 설비
DE102010011059A1 (de) 2010-03-11 2011-09-15 Global Beam Technologies Ag Verfahren und Vorrichtung zur Herstellung eines Bauteils
JP5551479B2 (ja) * 2010-03-19 2014-07-16 ニッタ・ハース株式会社 研磨装置、研磨パッドおよび研磨情報管理システム
JP5620141B2 (ja) 2010-04-15 2014-11-05 東洋ゴム工業株式会社 研磨パッド
JP5697889B2 (ja) 2010-04-19 2015-04-08 帝人コードレ株式会社 平滑加工用シート
US20130059506A1 (en) 2010-05-11 2013-03-07 3M Innovative Properties Company Fixed abrasive pad with surfactant for chemical mechanical planarization
US20120000887A1 (en) 2010-06-30 2012-01-05 Kabushiki Kaisha Toshiba Plasma treatment apparatus and plasma treatment method
PT2588275T (pt) 2010-07-02 2018-03-13 3M Innovative Properties Co Artigos abrasivos revestidos
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
JP5635957B2 (ja) 2010-09-09 2014-12-03 日本碍子株式会社 被研磨物の研磨方法、及び研磨パッド
US20130172509A1 (en) 2010-09-22 2013-07-04 Interfacial Solutions Ip, Llc Methods of Producing Microfabricated Particles for Composite Materials
US8257545B2 (en) 2010-09-29 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with light stable polymeric endpoint detection window and method of polishing therewith
US8702479B2 (en) 2010-10-15 2014-04-22 Nexplanar Corporation Polishing pad with multi-modal distribution of pore diameters
US9211628B2 (en) 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
WO2012100297A1 (en) 2011-01-26 2012-08-02 Zydex Pty Ltd A device for making an object
JP5893479B2 (ja) 2011-04-21 2016-03-23 東洋ゴム工業株式会社 積層研磨パッド
CN103492504B (zh) 2011-04-27 2017-06-23 汉高知识产权控股有限责任公司 具有低温密封能力的可固化的弹性体组合物
US8968058B2 (en) * 2011-05-05 2015-03-03 Nexplanar Corporation Polishing pad with alignment feature
US20120302148A1 (en) 2011-05-23 2012-11-29 Rajeev Bajaj Polishing pad with homogeneous body having discrete protrusions thereon
JP5851124B2 (ja) 2011-06-13 2016-02-03 スリーエム イノベイティブ プロパティズ カンパニー 研磨用構造体
ES2441170T3 (es) 2011-06-21 2014-02-03 Agfa Graphics N.V. Líquido eyectable curable para fabricar una matriz de impresión flexográfica
JP2013018056A (ja) 2011-07-07 2013-01-31 Toray Ind Inc 研磨パッド
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US9108291B2 (en) 2011-09-22 2015-08-18 Dow Global Technologies Llc Method of forming structured-open-network polishing pads
US8894799B2 (en) 2011-09-22 2014-11-25 Dow Global Technologies Llc Method of forming layered-open-network polishing pads
US8801949B2 (en) 2011-09-22 2014-08-12 Dow Global Technologies Llc Method of forming open-network polishing pads
KR20140069043A (ko) 2011-09-26 2014-06-09 인티그리스, 인코포레이티드 포스트-cmp 세정 장치 및 방법
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
TWI462797B (zh) * 2011-11-24 2014-12-01 Univ Nat Taiwan Science Tech Electric field assisted chemical mechanical polishing system and its method
US9067298B2 (en) 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with grooved foundation layer and polishing surface layer
US9067297B2 (en) 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with foundation layer and polishing surface layer
EP2785797B1 (en) 2011-11-30 2018-03-21 Merck Patent GmbH Particles for electrophoretic displays
US10825708B2 (en) 2011-12-15 2020-11-03 Applied Materials, Inc. Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability
KR20130084932A (ko) 2012-01-18 2013-07-26 삼성전자주식회사 반도체 소자의 제조 방법
US8486798B1 (en) 2012-02-05 2013-07-16 Tokyo Electron Limited Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof
US8721833B2 (en) 2012-02-05 2014-05-13 Tokyo Electron Limited Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof
KR20130095430A (ko) 2012-02-20 2013-08-28 케이피엑스케미칼 주식회사 연마패드 및 그 제조방법
US10005236B2 (en) 2012-03-01 2018-06-26 Stratasys Ltd. Cationic polymerizable compositions and methods of use thereof
DE102012203639A1 (de) 2012-03-08 2013-09-12 Evonik Industries Ag Additiv zur Einstellung der Glasübergangstemperatur von viskoelastischen Polyurethanweichschaumstoffen
US8986585B2 (en) 2012-03-22 2015-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing chemical mechanical polishing layers having a window
US8709114B2 (en) 2012-03-22 2014-04-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing chemical mechanical polishing layers
DE102012007791A1 (de) 2012-04-20 2013-10-24 Universität Duisburg-Essen Verfahren und Vorrichtung zur Herstellung von Bauteilen in einer Strahlschmelzanlage
US9067299B2 (en) 2012-04-25 2015-06-30 Applied Materials, Inc. Printed chemical mechanical polishing pad
US9412579B2 (en) 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US9993873B2 (en) 2012-05-22 2018-06-12 General Electric Company System and method for three-dimensional printing
US9481134B2 (en) 2012-06-08 2016-11-01 Makerbot Industries, Llc Build platform leveling with tactile feedback
KR102136432B1 (ko) 2012-06-11 2020-07-21 캐보트 마이크로일렉트로닉스 코포레이션 몰리브덴을 연마하기 위한 조성물 및 방법
JP5994183B2 (ja) 2012-06-29 2016-09-21 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
US8778211B2 (en) 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
US9174388B2 (en) 2012-08-16 2015-11-03 Stratasys, Inc. Draw control for extrusion-based additive manufacturing systems
US8888480B2 (en) 2012-09-05 2014-11-18 Aprecia Pharmaceuticals Company Three-dimensional printing system and equipment assembly
KR101835288B1 (ko) 2012-09-05 2018-03-06 아프레시아 파마슈티칼스 컴퍼니 3차원 인쇄 시스템 및 장비 어셈블리
JP6196858B2 (ja) 2012-09-24 2017-09-13 株式会社荏原製作所 研磨方法および研磨装置
US9718975B2 (en) 2012-09-25 2017-08-01 3M Innovative Properties Company Radiation curable ink composition
CN202825512U (zh) 2012-10-11 2013-03-27 中芯国际集成电路制造(北京)有限公司 研磨垫及化学机械研磨机台
WO2014058887A1 (en) 2012-10-11 2014-04-17 Dow Corning Corporation Aqueous silicone polyether microemulsions
US9233504B2 (en) 2012-10-29 2016-01-12 Makerbot Industries, Llc Tagged build material for three-dimensional printing
CN109937387B (zh) 2012-11-08 2022-08-23 Ddm系统有限责任公司 金属部件的增材制造及维修
KR20150085000A (ko) 2012-11-16 2015-07-22 어플라이드 머티어리얼스, 인코포레이티드 캐리어 헤드용 센서들에 의한 기록 측정들
US9718129B2 (en) 2012-12-17 2017-08-01 Arcam Ab Additive manufacturing method and apparatus
US10357435B2 (en) 2012-12-18 2019-07-23 Dentca, Inc. Photo-curable resin compositions and method of using the same in three-dimensional printing for manufacturing artificial teeth and denture base
US11673155B2 (en) 2012-12-27 2023-06-13 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
CA2936015C (en) 2013-01-17 2021-05-25 Ehsan Toyserkani Systems and methods for additive manufacturing of heterogeneous porous structures and structures made therefrom
US9649742B2 (en) 2013-01-22 2017-05-16 Nexplanar Corporation Polishing pad having polishing surface with continuous protrusions
JP2016513146A (ja) 2013-02-06 2016-05-12 サン・ケミカル・コーポレーション デジタル印刷インク
TWI655498B (zh) 2013-02-12 2019-04-01 美商Eipi系統公司 用於3d製造的方法與裝置
US20140256231A1 (en) 2013-03-07 2014-09-11 Dow Global Technologies Llc Multilayer Chemical Mechanical Polishing Pad With Broad Spectrum, Endpoint Detection Window
JP6348520B2 (ja) 2013-03-14 2018-06-27 ストラタシス リミテッド ポリマーベースの型とその製造方法
US9152340B2 (en) 2013-05-28 2015-10-06 Netapp, Inc. System and method for managing and producing a dataset image across multiple storage systems
JP5955275B2 (ja) 2013-06-12 2016-07-20 富士フイルム株式会社 画像形成方法、加飾シートの製造方法、成形加工方法、加飾シート成形物の製造方法、インモールド成形品の製造方法
US20140370788A1 (en) 2013-06-13 2014-12-18 Cabot Microelectronics Corporation Low surface roughness polishing pad
US10183329B2 (en) 2013-07-19 2019-01-22 The Boeing Company Quality control of additive manufactured parts
US20150038066A1 (en) 2013-07-31 2015-02-05 Nexplanar Corporation Low density polishing pad
GB201313841D0 (en) 2013-08-02 2013-09-18 Rolls Royce Plc Method of Manufacturing a Component
JP6441927B2 (ja) 2013-08-06 2018-12-19 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 局部的に加熱されるマルチゾーン式の基板支持体
US9855698B2 (en) 2013-08-07 2018-01-02 Massachusetts Institute Of Technology Automatic process control of additive manufacturing device
JP5992375B2 (ja) 2013-08-08 2016-09-14 株式会社東芝 静電チャック、載置プレート支持台及び静電チャックの製造方法
KR102207743B1 (ko) 2013-08-10 2021-01-26 어플라이드 머티어리얼스, 인코포레이티드 제어된 컨디셔닝을 용이하게 하는 재료 조성을 갖는 cmp 패드들
SG11201601175WA (en) 2013-08-22 2016-03-30 Cabot Microelectronics Corp Polishing pad with porous interface and solid core, and related apparatus and methods
US20150056895A1 (en) 2013-08-22 2015-02-26 Cabot Microelectronics Corporation Ultra high void volume polishing pad with closed pore structure
DE102013217422A1 (de) 2013-09-02 2015-03-05 Carl Zeiss Industrielle Messtechnik Gmbh Koordinatenmessgerät und Verfahren zur Vermessung und mindestens teilweisen Erzeugung eines Werkstücks
CN103465155B (zh) 2013-09-06 2016-05-11 蓝思科技股份有限公司 一种环氧树脂型金刚石研磨垫及其制备方法
US9425121B2 (en) 2013-09-11 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated fan-out structure with guiding trenches in buffer layer
KR101405333B1 (ko) 2013-09-12 2014-06-11 유비머트리얼즈주식회사 연마 입자, 연마 슬러리 및 이를 이용한 반도체 소자의 제조 방법
US9308620B2 (en) 2013-09-18 2016-04-12 Texas Instruments Incorporated Permeated grooving in CMP polishing pads
US9053908B2 (en) 2013-09-19 2015-06-09 Lam Research Corporation Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching
GB201316815D0 (en) 2013-09-23 2013-11-06 Renishaw Plc Additive manufacturing apparatus and method
KR102252673B1 (ko) 2013-09-25 2021-05-18 쓰리엠 이노베이티브 프로퍼티즈 컴파니 다층화된 폴리싱 패드
RU2643004C2 (ru) 2013-09-30 2018-01-29 Сен-Гобен Серэмикс Энд Пластикс, Инк. Формованные абразивные частицы и способы их получения
WO2015055550A1 (en) 2013-10-17 2015-04-23 Luxexcel Holding B.V. Device for printing a three-dimensional structure
CN203542340U (zh) 2013-10-21 2014-04-16 中芯国际集成电路制造(北京)有限公司 一种化学机械研磨垫
US9831074B2 (en) 2013-10-24 2017-11-28 Applied Materials, Inc. Bipolar collimator utilized in a physical vapor deposition chamber
US8980749B1 (en) 2013-10-24 2015-03-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing silicon wafers
EP3063591B1 (en) 2013-10-30 2018-04-04 Anocoil Corporation Lithographic printing plate precursors and coating
US9421666B2 (en) 2013-11-04 2016-08-23 Applied Materials, Inc. Printed chemical mechanical polishing pad having abrasives therein
US9481069B2 (en) 2013-11-06 2016-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing apparatus and polishing method using the same
US9352443B2 (en) 2013-11-13 2016-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Platen assembly, chemical-mechanical polisher, and method for polishing substrate
US9850402B2 (en) 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
TWM481855U (zh) * 2013-12-18 2014-07-11 Hui-Teng Xue 具有緊放模式的abs煞車配件組
US9993907B2 (en) 2013-12-20 2018-06-12 Applied Materials, Inc. Printed chemical mechanical polishing pad having printed window
CN104742007B (zh) 2013-12-30 2017-08-25 中芯国际集成电路制造(北京)有限公司 化学机械研磨装置和化学机械研磨方法
EP3096936B1 (en) 2014-01-23 2019-10-09 Ricoh Company, Ltd. Method for forming a three-dimensional object
WO2015120430A1 (en) 2014-02-10 2015-08-13 President And Fellows Of Harvard College 3d-printed polishing pad for chemical-mechanical planarization (cmp)
EP3105040B1 (en) 2014-02-10 2023-10-18 Stratasys Ltd. Composition and method for additive manufacturing of an object
WO2015120429A1 (en) 2014-02-10 2015-08-13 President And Fellows Of Harvard College Three-dimensional (3d) printed composite structure and 3d printable composite ink formulation
DE102014202945B4 (de) * 2014-02-18 2017-01-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen eines organischen elektronischen Bauelementes und organisches elektronisches Bauelement
US9472410B2 (en) 2014-03-05 2016-10-18 Applied Materials, Inc. Pixelated capacitance controlled ESC
JP2015174272A (ja) 2014-03-14 2015-10-05 セイコーエプソン株式会社 三次元造形物の製造方法、三次元造形物製造装置および三次元造形物
US9259820B2 (en) 2014-03-28 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with polishing layer and window
CN106163740B (zh) 2014-04-03 2019-07-09 3M创新有限公司 抛光垫和系统以及制造和使用该抛光垫和系统的方法
WO2015161210A1 (en) 2014-04-17 2015-10-22 Cabot Microelectronics Corporation Cmp polishing pad with columnar structure and methods related thereto
US9333620B2 (en) 2014-04-29 2016-05-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with clear endpoint detection window
US9314897B2 (en) 2014-04-29 2016-04-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9259821B2 (en) 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US20150375361A1 (en) 2014-06-25 2015-12-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
JP2016023209A (ja) 2014-07-17 2016-02-08 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
WO2016011586A1 (zh) 2014-07-21 2016-01-28 王雅苹 一种大倾角地区的垂直地震数据桥式标定方法
US9731398B2 (en) 2014-08-22 2017-08-15 Rohm And Haas Electronic Materials Cmp Holding, Inc. Polyurethane polishing pad
US9826630B2 (en) 2014-09-04 2017-11-21 Nxp Usa, Inc. Fan-out wafer level packages having preformed embedded ground plane connections and methods for the fabrication thereof
KR20170054447A (ko) 2014-09-05 2017-05-17 어플라이드 머티어리얼스, 인코포레이티드 기판들의 열적 프로세싱을 위한 서셉터 및 예열 링
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
CN106716604A (zh) 2014-10-09 2017-05-24 应用材料公司 具有内部通道的化学机械研磨垫
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
TWI689406B (zh) 2014-10-17 2020-04-01 美商應用材料股份有限公司 研磨墊及製造其之方法
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
KR102436416B1 (ko) 2014-10-17 2022-08-26 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
KR101647894B1 (ko) 2014-11-27 2016-08-12 한국생산기술연구원 3차원 메탈프린터를 이용한 다공성 패드 제작방법
JP6422325B2 (ja) 2014-12-15 2018-11-14 花王株式会社 半導体基板用研磨液組成物
US10086500B2 (en) 2014-12-18 2018-10-02 Applied Materials, Inc. Method of manufacturing a UV curable CMP polishing pad
JP6452449B2 (ja) 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
US20170263478A1 (en) 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US10946495B2 (en) 2015-01-30 2021-03-16 Cmc Materials, Inc. Low density polishing pad
US9505952B2 (en) 2015-03-05 2016-11-29 Cabot Microelectronics Corporation Polishing composition containing ceria abrasive
EP3274172B1 (en) 2015-03-25 2023-04-26 Stratasys Ltd. Method and system for in situ sintering of conductive ink
US9475168B2 (en) 2015-03-26 2016-10-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad window
WO2016173668A1 (en) 2015-04-30 2016-11-03 Hewlett-Packard Development Company, L.P. Misalignment detection for a 3d printing device
US10017857B2 (en) 2015-05-02 2018-07-10 Applied Materials, Inc. Method and apparatus for controlling plasma near the edge of a substrate
CN106206409B (zh) 2015-05-08 2019-05-07 华邦电子股份有限公司 堆叠电子装置及其制造方法
US9969049B2 (en) 2015-06-29 2018-05-15 Iv Technologies Co., Ltd. Polishing layer of polishing pad and method of forming the same and polishing method
US10163610B2 (en) 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US9761459B2 (en) 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US10406801B2 (en) 2015-08-21 2019-09-10 Voxel8, Inc. Calibration and alignment of 3D printing deposition heads
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
WO2017049155A1 (en) 2015-09-16 2017-03-23 Applied Materials, Inc. Selectively openable support platen for additive manufacturing
JP6584895B2 (ja) 2015-09-30 2019-10-02 富士紡ホールディングス株式会社 研磨パッド
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
CN108136568B (zh) 2015-10-16 2020-10-09 应用材料公司 使用增材制造工艺形成先进抛光垫的方法和设备
JP2017078123A (ja) 2015-10-21 2017-04-27 Kjケミカルズ株式会社 サポート材用活性エネルギー線硬化性樹脂組成物
US10062599B2 (en) 2015-10-22 2018-08-28 Lam Research Corporation Automated replacement of consumable parts using interfacing chambers
US9881820B2 (en) 2015-10-22 2018-01-30 Lam Research Corporation Front opening ring pod
US10124492B2 (en) 2015-10-22 2018-11-13 Lam Research Corporation Automated replacement of consumable parts using end effectors interfacing with plasma processing system
US20170115657A1 (en) 2015-10-22 2017-04-27 Lam Research Corporation Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ
US10450474B2 (en) 2015-10-30 2019-10-22 Konica Minolta, Inc. Active light ray-curable inkjet ink composition and inkjet recording method
CN113103145B (zh) 2015-10-30 2023-04-11 应用材料公司 形成具有期望ζ电位的抛光制品的设备与方法
GB201519187D0 (en) 2015-10-30 2015-12-16 Knauf Insulation Ltd Improved binder compositions and uses thereof
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10229769B2 (en) 2015-11-20 2019-03-12 Xerox Corporation Three phase immiscible polymer-metal blends for high conductivty composites
US10189143B2 (en) 2015-11-30 2019-01-29 Taiwan Semiconductor Manufacturing Company Limited Polishing pad, method for manufacturing polishing pad, and polishing method
US9601319B1 (en) 2016-01-07 2017-03-21 Lam Research Corporation Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR102629800B1 (ko) 2016-01-19 2024-01-29 어플라이드 머티어리얼스, 인코포레이티드 다공성 화학적 기계적 연마 패드들
US10685862B2 (en) 2016-01-22 2020-06-16 Applied Materials, Inc. Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device
US9956314B2 (en) 2016-01-26 2018-05-01 Modern Ideas LLC Adhesive for use with bone and bone-like structures
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US9966231B2 (en) 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
SG11201806820UA (en) 2016-03-09 2018-09-27 Applied Materials Inc Correction of fabricated shapes in additive manufacturing
KR102302564B1 (ko) 2016-03-09 2021-09-15 어플라이드 머티어리얼스, 인코포레이티드 패드 구조 및 제조 방법들
KR102363829B1 (ko) 2016-03-24 2022-02-16 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마를 위한 조직화된 소형 패드
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
KR20170127724A (ko) 2016-05-12 2017-11-22 삼성전자주식회사 플라즈마 처리 장치
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US9852889B1 (en) 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
US10283330B2 (en) 2016-07-25 2019-05-07 Lam Research Corporation Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators
JP6791680B2 (ja) 2016-08-09 2020-11-25 株式会社フジミインコーポレーテッド 表面処理組成物およびこれを用いた洗浄方法
US20180100074A1 (en) 2016-10-11 2018-04-12 Xerox Corporation Ink composition for use in 3d printing
US10259956B2 (en) 2016-10-11 2019-04-16 Xerox Corporation Curable ink composition
US20180100073A1 (en) 2016-10-11 2018-04-12 Xerox Corporation Ink composition for use in 3d printing
US10930535B2 (en) 2016-12-02 2021-02-23 Applied Materials, Inc. RFID part authentication and tracking of processing components
KR102683416B1 (ko) 2017-02-15 2024-07-23 삼성전자주식회사 화학 기계적 연마 장치
US20180323042A1 (en) 2017-05-02 2018-11-08 Applied Materials, Inc. Method to modulate the wafer edge sheath in a plasma processing chamber
US10967482B2 (en) 2017-05-25 2021-04-06 Applied Materials, Inc. Fabrication of polishing pad by additive manufacturing onto mold
US10882160B2 (en) 2017-05-25 2021-01-05 Applied Materials, Inc. Correction of fabricated shapes in additive manufacturing using sacrificial material
JP6826955B2 (ja) 2017-06-14 2021-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN213006569U (zh) 2017-06-21 2021-04-20 卡本有限公司 用于增材制造的系统和对分配用于增材制造的树脂有用的分配系统
US10763081B2 (en) 2017-07-10 2020-09-01 Applied Materials, Inc. Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
JP7102724B2 (ja) 2017-12-19 2022-07-20 株式会社リコー 電極、非水系蓄電素子、塗布液及び電極の製造方法
JP7033907B2 (ja) 2017-12-21 2022-03-11 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP2020532884A (ja) 2018-01-22 2020-11-12 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 給電型エッジリングを用いた処理
WO2019152222A1 (en) 2018-02-05 2019-08-08 Applied Materials, Inc. Piezo-electric end-pointing for 3d printed cmp pads
WO2019190676A1 (en) 2018-03-30 2019-10-03 Applied Materials, Inc. Integrating 3d printing into multi-process fabrication schemes
US11826876B2 (en) 2018-05-07 2023-11-28 Applied Materials, Inc. Hydrophilic and zeta potential tunable chemical mechanical polishing pads
US10600623B2 (en) 2018-05-28 2020-03-24 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US10347500B1 (en) 2018-06-04 2019-07-09 Applied Materials, Inc. Device fabrication via pulsed plasma
US10847347B2 (en) 2018-08-23 2020-11-24 Applied Materials, Inc. Edge ring assembly for a substrate support in a plasma processing chamber
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
CN112913140B (zh) 2018-11-09 2024-09-03 应用材料公司 用于处理腔室的射频滤波器系统
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US20200230781A1 (en) 2019-01-23 2020-07-23 Applied Materials, Inc. Polishing pads formed using an additive manufacturing process and methods related thereto
WO2020190441A1 (en) 2019-03-19 2020-09-24 Applied Materials, Inc. Hydrophobic and icephobic coating
US11851570B2 (en) 2019-04-12 2023-12-26 Applied Materials, Inc. Anionic polishing pads formed by printing processes

Also Published As

Publication number Publication date
US20200135517A1 (en) 2020-04-30
WO2017078933A1 (en) 2017-05-11
JP2018535107A (ja) 2018-11-29
TW201718178A (zh) 2017-06-01
TW202110581A (zh) 2021-03-16
JP7277528B2 (ja) 2023-05-19
US11986922B2 (en) 2024-05-21
KR20180071368A (ko) 2018-06-27
JP2022023027A (ja) 2022-02-07
CN108369904A (zh) 2018-08-03
US20170133252A1 (en) 2017-05-11
TWI697384B (zh) 2020-07-01
CN108369904B (zh) 2023-04-07
US10593574B2 (en) 2020-03-17
TWI749562B (zh) 2021-12-11
JP6940497B2 (ja) 2021-09-29

Similar Documents

Publication Publication Date Title
CN108369904B (zh) 用于结合cmp工艺的追踪数据与3d打印的cmp耗材的技术
US11007618B2 (en) Printing chemical mechanical polishing pad having window or controlled porosity
JP6898379B2 (ja) 印刷による化学機械研磨パッド
KR102351409B1 (ko) 연마 제품들, 및 화학적 기계적 연마 제품들을 제조하기 위한 통합된 시스템 및 방법들
KR20170070210A (ko) 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성
US20220055181A1 (en) Retaining ring design

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination