TWI749562B - 用於結合cmp製程之追蹤資料與3d列印之cmp耗材的技術 - Google Patents

用於結合cmp製程之追蹤資料與3d列印之cmp耗材的技術 Download PDF

Info

Publication number
TWI749562B
TWI749562B TW109117279A TW109117279A TWI749562B TW I749562 B TWI749562 B TW I749562B TW 109117279 A TW109117279 A TW 109117279A TW 109117279 A TW109117279 A TW 109117279A TW I749562 B TWI749562 B TW I749562B
Authority
TW
Taiwan
Prior art keywords
polishing
features
wireless communication
rfid tag
printed
Prior art date
Application number
TW109117279A
Other languages
English (en)
Other versions
TW202110581A (zh
Inventor
傑森G 馮
拉吉菲 巴札
丹尼爾 瑞特法德
亞尼盧得 卡那
瑪利歐 寇爾內喬
葛利格瑞E 敏克
約翰 瓦特肯斯
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202110581A publication Critical patent/TW202110581A/zh
Application granted granted Critical
Publication of TWI749562B publication Critical patent/TWI749562B/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/003Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving acoustic means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/14Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
    • B29C64/10Processes of additive manufacturing
    • B29C64/106Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y10/00Processes of additive manufacturing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00Products made by additive manufacturing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67294Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2995/00Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
    • B29K2995/0003Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular electrical or magnetic properties, e.g. piezoelectric
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2995/00Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
    • B29K2995/0003Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular electrical or magnetic properties, e.g. piezoelectric
    • B29K2995/0005Conductive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29LINDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00Other particular articles
    • B29L2031/736Grinding or polishing equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10098Components for radio transmission, e.g. radio frequency identification [RFID] tag, printed or non-printed antennas

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Optics & Photonics (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Machine Tool Sensing Apparatuses (AREA)

Abstract

本文提供化學機械拋光(CMP)設備及用於製造CMP設備之方法。CMP設備可包含拋光襯墊、拋光頭保持環及拋光頭膜等等,且可經由諸如三維(3D)列印製程的相加製造製程製造CMP設備。CMP設備可包含整合於其中之無線通信設備組件。製造CMP設備之方法包含將無線通信設備3D列印至拋光襯墊中且使拋光襯墊列印有經配置以接收預成型無線通信設備之凹部。

Description

用於結合CMP製程之追蹤資料與3D列印之CMP耗材的技術
本揭示內容之實施例一般而言係關於一種化學機械拋光(chemical mechanical polishing; CMP)設備及製作且使用此CMP設備之方法。更特定而言,本文所述之實施例係關於用於收集CMP設備中之資料之技術,該技術諸如收集關於CMP製程之資料及/或關於在CMP拋光設備中找到之組件之資料。
化學機械拋光(chemical mechanical polishing; CMP)係通常用於在半導體裝置之製作期間平坦化基板之技術。在CMP製程期間,將正處理之基板安裝於載架頭上,其中裝置表面抵靠著旋轉拋光襯墊定位。載架頭將可控制負載提供至基板以推動裝置表面抵靠著拋光襯墊。通常將拋光液(諸如,具有磨料顆粒之漿料)供應至拋光襯墊之表面。拋光襯墊係在拋光一定數目之基板之後通常變得磨損之耗材組件。因此,需要偶爾替換襯墊及其他CMP耗材組件以維持一致且適合之拋光效能。
通常藉由模製、澆鑄或燒結聚氨酯材料來製作拋光襯墊。在模製之情形中,可(例如)藉由射出模製一次一個地製作拋光襯墊。在澆鑄之情形中,將液體前驅物澆鑄且固化成餅狀物,隨後將此餅狀物切片成個別襯墊件。接著,可將襯墊件用機器加工至最終厚度。可將凹槽用機器加工至拋光表面中或作為射出模製製程之部分形成凹槽。此等製造拋光襯墊之方法昂貴且耗費時間。此外,藉由此等方法製造之拋光襯墊通常產生不均勻之拋光結果。例如,在CMP期間,可以不同速率拋光基板上之不同區域從而導致在一些區域中移除過多材料(「拋光過度」)或在其他區域中移除過少材料(「拋光不足」)。
另外,藉由習用技術製造之拋光襯墊及其他CMP設備通常缺乏用於執行各種追蹤、感測、監控及製程計量功能之裝置及方法。習用CMP系統通常依賴於系統級感測技術,此等感測技術通常不提供充足資料以適當地控制平坦化在進階技術積體電路節點中形成之裝置所需之CMP製程。
因此,需要提供改良拋光效能及所期望製程感測能力之CMP系統、拋光襯墊及其他CMP設備。另外,需要用於製造此設備之方法。
在一個實施例中,提供一種拋光襯墊設備。此設備包含經列印之聚合主體,此經列印之聚合主體包括具有經配置以接觸基板之上表面之一或多個拋光特徵。經列印之聚合主體包含:第一區,其包括第一材料;以及第二區,其包括第二材料。RFID標籤可整體地安置於經列印之聚合主體內且RFID標籤定位於距上表面之一距離處。
在另一實施例中,提供一種化學機械拋光系統。此系統包含:平台,其具有支撐表面;以及經列印之拋光襯墊,其具有安置於其中之RFID標籤。可將經列印之拋光襯墊安置於平台之支撐表面上方且亦可將詢問器耦合至平台。詢問器及RFID標籤經配置以使用無線通信技術相互通信。亦可與平台相對地定位拋光頭且拋光頭可經配置以推動基板抵靠著經列印之拋光襯墊之拋光表面。
在又一實施例中,提供一種製造拋光襯墊之方法。此方法包含藉由自列印頭之第一噴嘴分配一或多種第一聚合材料而沉積拋光襯墊之經列印之第一部分。一或多種第一聚合材料可為非導電的且可藉由自列印頭之第二噴嘴在拋光頭之經列印之第一部分上分配一或多種第二聚合材料而沉積經列印之RFID標籤。一或多種第二聚合材料可包含至少一種導電或半導電聚合材料。可藉由自列印頭之第一噴嘴分配一或多種第一聚合材料而在經列印之RFID標籤及經列印之第一部分上方沉積拋光襯墊之經列印之第二部分。
在又一實施例中,提供一種使用經列印之拋光頭之方法。此方法包含藉助安置於經列印之拋光襯墊內之RFID標籤感測一或多個處理參數且經由詢問器自RFID標籤接收一或多個信號。此方法亦包含將一或多個信號傳達至經調適以控制拋光製程之控制器。
在又一實施例中,提供一種無線通信方法。此方法包含在拋光系統中執行基板拋光製程。拋光系統可包含:平台;拋光襯墊,其耦合至平台;以及拋光頭,其包括可移除地耦合至拋光頭之一或多個組件。可將RFID標籤耦合至一或多個組件且可經由可固定地安置於平台中之詢問器自RFID接收一或多個無線通信信號。可分析一或多個無線通信信號且可自拋光頭移除一或多個組件。
在又一實施例中,提供一種體現於在設計過程中使用之機器可讀媒體中之結構。此結構包含經列印之聚合主體,此經列印之聚合主體包括具有經配置以接觸基板之上表面之一或多個拋光特徵。經列印之聚合主體包含:一或多種實質上非導電第一材料;以及經列印之RFID標籤,其包括可整體地安置於經列印之聚合主體內之一或多種第二材料。一或多種第二材料可為導電的或半導電的。
在又一實施例中,提供一種非暫時性電腦可讀媒體。此電腦可讀媒體可儲存指令,此等指令在由處理器執行時導致電腦系統藉由執行以下操作而實施基板拋光製程:導致基板拋光製程之起始且接收對應於一或多個處理參數之信號。此等信號可由安置於經列印之拋光襯墊內之無線通信設備產生。可分析信號以決定處理條件且可回應於處理條件而改變一或多個處理參數中之至少一者。
在一些實施例中,可將RFID標籤安置於拋光襯墊內或耦合至拋光襯墊且可將讀取器安置於平台或拋光頭內。在另一實施例中,可將RFID標籤安置於保持環內或耦合至保持環且可將讀取器安置於平台內。在另一實施例中,可將RFID標籤安置於膜內或耦合至膜且可將讀取器安置於平台內。可將各種感測器耦合至RFID標籤以提供現場監控、感測及計量功能性。
本揭示內容之實施例一般而言包含CMP設備及用於製造且使用CMP設備之方法。CMP設備可包含拋光襯墊、拋光頭保持環及拋光頭膜等等,且可經由諸如三維(3D)列印製程或2.5維(2.5D)列印製程的相加製造製程製造CMP設備。CMP設備可包含無線通信設備,諸如整合於其中之射頻識別(radio frequency identification; RFID)或其他組件。製造CMP設備之方法包含將RFID標籤3D列印至拋光襯墊中或3D列印至拋光襯墊上且使拋光襯墊列印有經配置以接收RFID標籤之凹部。
圖1A圖示根據本文所述之實施例的拋光設備100之示意性剖視圖。可在拋光系統中利用拋光設備100來執行基板拋光。拋光台100包含平台102,此平台可繞中心軸104旋轉。平台102之形狀係大體圓形,但應預期,可有利地利用其他形狀。可將拋光襯墊106耦合至平台102。儘管圖示為耦合至平台102的單個拋光襯墊106,但應預期,亦可端視所期望之拋光特性而將多個拋光襯墊耦合至平台。根據本揭示內容之實施例,拋光襯墊106可包含單材料層主體或複合材料主體。拋光襯墊106包含拋光表面112,其經配置以接觸基板且藉由自基板移除至少一些材料來處理基板。平台102支撐拋光襯墊106且在拋光期間旋轉拋光襯墊106。
載架頭108可緊固且固持抵靠著拋光襯墊106之拋光表面112處理之基板110。載架頭108可繞中心軸114旋轉及/或在清掃運動中移動以產生基板110與拋光襯墊106之間的相對運動。在拋光期間,可藉由遞送臂118將拋光流體116(諸如,磨料漿料)供應至拋光表面112。拋光液116可含有磨料顆粒、pH調整劑及/或化學活性組分以達成基板110之化學機械拋光。
一或多個無線通信設備600可安置於拋光襯墊106內或以其他方式耦合至拋光襯墊106。一或多個詢問器601可安置於平台102內或以其他方式耦合至平台102。無線通信設備600及詢問器601經配置以經由通信鏈路607通信。在一個實施例中,通信鏈路607可為無線通信協定。在另一實施例中,通信鏈路607可為有線連接。詢問器以通信方式耦合至控制器612,此控制器可經由詢問器601自無線通信設備600接收輸入。參考圖6更詳細地論述無線通信設備600、詢問器601及控制器。
一般而言,無線通信設備600經配置以感測各種處理參數及系統組件。無線通信設備600可定位於拋光襯墊106之各個位置處且可提供整個拋光表面112上方之經改良資料收集,可由控制器112分析資料以改良拋光製程之控制。經由無線通信設備600收集之資料可用於即時製程控制及/或用於確保相容系統組件之利用,諸如適合之保持環120或撓性膜(未展示)以及其他系統組件。在此等實施例中,其他適合系統組件亦可採用無線通信設備以與詢問器601通信。
圖1B圖示根據本文所述之實施例的圖1A之拋光設備100之載架頭108之更詳細橫截面圖。如上文所述,載架頭108經配置以在拋光或其他處理期間固持基板110。載架頭108可抵靠著由可旋轉平台102支撐之拋光襯墊106固持基板110且跨越基板110之背部表面136朝向拋光襯墊106分配壓力。
載架頭108包含基底總成140(其可直接或間接耦合至可旋轉驅動軸件130)、保持環120及撓性膜132。撓性膜132在基底總成140下方延伸且與基底總成140耦合以提供多個可加壓腔室,包含非圓形內腔室122a及毗鄰外腔室122b。通路124a及124b穿過基底總成140形成以將腔室122a及122b分別流體地耦合至拋光設備100中之壓力調節器。儘管圖1B圖示兩個可加壓腔室,但載架頭108可具有任何數目之腔室,例如,三、四、五或更多個腔室。
儘管未展示,但載架頭108可包含其他元件,諸如,可緊固至驅動軸件130且基底總成140可移動地自其懸吊之外殼、允許基底總成140樞轉之萬向節機構(其可視為基底總成140之部分)、基底總成140與外殼之間的負載腔室、腔室122a及122b內部之一或多個支撐結構或接觸撓性膜132之內表面以將補充壓力施加至基板110之一或多個內部膜。
撓性膜132可為疏水性、耐用性且關於拋光製程有化學惰性。撓性膜132可包含經配置以接觸基板110之背部表面136之安裝部分138。一或多個活頁134可經由夾環126、128將安裝部分138耦合至基底總成140。一或多個活頁134可分割腔室122a、122b以提供跨越基板110之區域壓力控制。
保持環120可自撓性膜132徑向向外地耦合至基底總成140。一般而言,保持環120經配置以防止基板110相對於撓性膜132過度移動且防止基板110之橫向移動。保持環可由對拋光製程中所用之化學組合物有惰性之材料製成。應預期,端視所期望應用,保持環120可由諸如聚合物、陶瓷及金屬的適合材料製成。進階 襯墊配置及設計實例
圖2係根據本文所述之實施例的拋光襯墊200之示意性透視剖視圖。可在拋光台(諸如,拋光台100)中使用拋光襯墊200以藉由化學機械拋光來拋光半導體基板。應預期,其他工業可使用可利用根據本文所述之實施例的拋光襯墊有利地處理之其他類型之基板。例如,光學工業可利用本文所述之襯墊及其他相關聯之設備拋光各種透鏡或鏡片。
在所圖示之實施例中,拋光襯墊200包含複合襯墊主體202。儘管未圖示,但應預期,拋光襯墊主體202可由單種材料而非多種材料形成。複合襯墊主體202包含一或多個第一特徵204及一或多個第二特徵206。第一特徵204及第二特徵206係離散特徵,此等離散特徵在其邊界處接合在一起以形成複合襯墊主體202。在一個實施例中,第一特徵204可具有約40肖氏D級至約90肖氏D級之硬度。第二特徵206可具有約26肖氏A級至約95肖氏A級之間的硬度值。
複合襯墊主體202可藉由相加製造(例如,3D列印或2.5D列印)或其他適合技術(諸如澆鑄或模製技術)形成。複合襯墊主體202可包含複數個層,根據複合襯墊主體202之設計,每一層包含第二特徵206之區及/或第一特徵204之區。在一個實施例中,包含第一特徵204及/或第二特徵206之每一區可在同時或順序列印製程中由3D列印機沉積。例如,複數個層可藉由UV光或藉由熱源固化以凝固且達成目標硬度。在沉積且固化之後,形成整體複合襯墊主體202,包含耦合或接合在一起之第一特徵204及第二特徵206。固化製程在關於非複合拋光襯墊之實施例中可為必要的或可不為必要的。
可針對第二特徵206及第一特徵204選擇具有不同機械性質之材料以達成目標拋光製程。可藉由選擇不同材料及/或挑選在特徵形成製程期間所用的不同固化製程達成第二特徵206及第一特徵204之動態機械性質。在一個實施例中,第二特徵206可具有較低硬度值及較低彈性模數值,而第一特徵204可具有較高硬度值及較高彈性模數值。在另一實施例中,可在每一特徵內及/或藉由第二特徵206及第一特徵204在拋光襯墊200之拋光表面內或跨越此拋光表面之實體佈局、圖案或結合來調整或控制動態機械性質,諸如,彈性模數(或儲存模數)及損耗模數。
第一特徵204可由一或多種聚合物材料形成。用於形成第一特徵204之材料可包含單種聚合物材料或兩種或兩種以上聚合物之混合物以達成目標機械、表面、化學或熱性質。在一個實施例中,第一特徵204可由一或多種熱塑性聚合物形成。第一特徵204可由熱塑性聚合物形成,諸如,聚氨酯、聚丙烯、聚苯乙烯、聚丙烯腈、聚甲基丙烯酸甲酯、聚氯三氟乙烯、聚四氟乙烯、聚甲醛、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚苯硫醚、聚醚碸、丙烯腈丁二烯苯乙烯(acrylonitrile butadiene styrene; ABS)、聚醚醯亞胺、聚醯胺、三聚氰胺、聚酯、聚碸、聚乙酸乙烯酯、氟化烴及類似物,及丙烯酸酯、上述之共聚物、接枝物及混合物。在一個實施例中,第一特徵204可由丙烯酸酯形成。例如,第一特徵204可為聚氨酯丙烯酸酯、聚醚丙烯酸酯或聚酯丙烯酸酯。在另一實施例中,第一特徵204可包含一或多種熱固性聚合物,諸如,環氧樹脂、酚類、胺、聚酯、胺甲酸乙酯、矽及丙烯酸酯、上述之混合物、共聚物及接枝物。
在一個實施例中,第一特徵204可由模擬塑膠3D列印材料形成。在另一實施例中,第一特徵204可由聚合材料形成,此聚合材料可為單種聚合物或聚合物之組合或熱塑性材料(諸如,熱塑性聚合物)。在一個實施例中,可將磨料顆粒嵌入於第一特徵204中以增強拋光製程。包括磨料顆粒之材料可為金屬氧化物(諸如二氧化鈰、氧化鋁、二氧化矽或前述者之組合)、聚合物、金屬間化合物或陶瓷。
用於形成第二特徵206之材料可包含一或多種聚合物材料。第二特徵206可由單種聚合物材料或兩種以上聚合物之混合物形成以達成目標性質。在一個實施例中,第二特徵206可由一或多種熱塑性聚合物形成。例如,第二特徵206可由熱塑性聚合物形成,諸如,聚氨酯、聚丙烯、聚苯乙烯、聚丙烯腈、聚甲基丙烯酸甲酯、聚氯三氟乙烯、聚四氟乙烯、聚甲醛、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚苯硫醚、聚醚碸、丙烯腈丁二烯苯乙烯(acrylonitrile butadiene styrene; ABS)、聚醚醯亞胺、聚醯胺、三聚氰胺、聚酯、聚碸、聚乙酸乙烯酯、氟化烴及類似物,及丙烯酸酯、上述之共聚物、接枝物及混合物。在一個實施例中,第二特徵206可由丙烯酸酯形成。例如,第二特徵206可為聚氨酯丙烯酸酯、聚醚丙烯酸酯或聚酯丙烯酸酯。在另一實施例中,第二特徵206可由熱塑性彈性體形成。在一個實施例中,第二特徵206可由類橡膠3D列印材料形成。
在一些實施例中,第一特徵204相對於第二特徵206較硬且剛性較大,而第二特徵206相對於第一特徵204較軟且撓性較大。可選擇第一特徵204及第二特徵206之材料及圖案以達成拋光襯墊200之「經調諧」塊體材料。用此「經調諧」塊體材料形成之拋光襯墊200具有各種優點,諸如改良拋光結果、降低製造成本、延長襯墊壽命。在一個實施例中,「經調諧」塊體材料或拋光襯墊作為整體可具有約65肖氏A至約75肖氏D之間的硬度。拋光襯墊之抗張強度可為在5 MPa與約75 MPa之間。拋光襯墊可具有約5%至約350%之斷裂伸長率。拋光襯墊可具有高於約10 MPa之抗剪強度。拋光襯墊可具有約5 MPa至約2000 MPa之間的儲存模數。拋光襯墊可在約25℃至約90℃之間的溫度範圍內具有穩定儲存模數以使得E30/E90下之儲存模數比落入約6至約30之間的範圍內,其中E30係30℃下之儲存模數且E90係90℃之儲存模數。
在一個實施例中,第一特徵204及第二特徵206之材料在化學上耐受來自拋光漿料之侵蝕。在另一實施例中,第一特徵204及第二特徵206之材料係親水性的。
一般而言,第一特徵204及第二特徵206可為交替之同心環,此等同心環交替地排列以形成圓形複合襯墊主體202。在其他實施例中,在交替或其他適合排列中,第一特徵206及第二特徵106可為自主體202延伸之離散柱。應預期,對於本文所述之實施例,亦可有利地利用各種其他拋光襯墊表面設計。在一個實施例中,第一特徵204之高度210高於第二特徵206之高度212以使得第一特徵204之上表面208自第二特徵206凸出。在第一特徵204與第二特徵206之間形成凹槽218或通道。在拋光期間,第一特徵204之上表面208形成接觸基板之拋光表面,而凹槽218保持拋光流體。在一個實施例中,第一特徵204經形成在垂直於與複合襯墊主體202平行之平面之方向上具有一厚度,該厚度大於第二特徵206之厚度,以使得凹槽218及/或通道形成於複合襯墊主體202之頂部表面上。
在一個實施例中,第一特徵204之寬度214可在約250微米至約2毫米之間。第一特徵204之間的間距216可在約0.5毫米至約5毫米之間。每一第一特徵204可具有在約250微米至約2毫米之間的範圍內之寬度214。寬度214及/或間距216可跨越拋光襯墊200之半徑至硬度不同之區帶變化。
與傳統拋光襯墊相比,本揭示內容之複合拋光襯墊200具有數個優點。傳統拋光襯墊一般而言包含拋光層,此拋光層具有由軟材料(諸如,發泡體)形成之子襯墊支撐之帶紋理拋光表面及/或磨料材料以獲得用於拋光基板之目標硬度或彈性模數。藉由選擇具有諸如帕松比(Poisson's ratio)、彈性模數及損耗模數等各種機械性質之材料且調整特徵之尺寸及間距或變化不同特徵之排列,可在不使用子襯墊之情況下在複合襯墊主體202中達成所期望硬度、動態性質及/或機械性質。因此,拋光襯墊200藉由消除子襯墊降低購置成本。另外,可藉由混合具有不同硬度及研磨性之特徵來調諧拋光襯墊200之硬度及研磨性,因此,改良拋光效能。
根據本揭示內容之複合拋光襯墊可藉由調整圖案變化及/或特徵大小變化跨越表面特徵(諸如,第一特徵204)及基底材料(諸如,第二特徵206)具有不同機械性質,諸如彈性模數(楊氏模數)及損耗模數。跨越拋光襯墊之機械性質可為對稱或不對稱、均勻或不均勻以達成目標性質。表面特徵之圖案可為徑向、同心、矩形或隨機的以跨越拋光襯墊達成目標性質,諸如預定機械性質,諸如彈性模數及損耗模數。在一些實施例中,第一特徵及第二特徵可經聯鎖以改良複合拋光襯墊之強度且改良複合拋光襯墊之實體完整性。第一特徵及第二特徵之聯鎖可增加拋光襯墊之抗剪強度、壓縮強度及/或抗張強度。
當在拋光襯墊中併入有各種感測設備時,諸如3D列印的相加製造製程可提供優點。下文將關於圖6及7更詳細地論述諸如RFID標籤及計量感測器的感測設備。
圖3係根據本文所述之實施例的拋光襯墊300之示意性橫截面圖。拋光襯墊300包含基底層302,類似於拋光襯墊200之第二特徵206之實施例,此基底層係軟的且具有彈性。類似於第二特徵206,基底層302可由一或多種彈性體聚合物形成。拋光襯墊300包含自基底層302延伸之複數個表面特徵306。表面特徵306之外表面308可由軟材料或軟材料之組合物形成。在一個實施例中,表面特徵306之外表面308可由與基底層302相同之材料或材料之相同組合物形成。表面特徵306亦可包含嵌入於其中之第一特徵304。第一特徵304可由比表面特徵306更硬之材料或材料之組合物形成。第一特徵304可由類似於拋光襯墊200之第一特徵204之材料或多種材料之材料形成。經嵌入之第一特徵304變更表面特徵306之有效機械性質,且因此可提供具有所期望機械及/或動態性質之襯墊供用於拋光。外表面308之軟聚合層可用於減少正拋光之基板上之缺陷且改良基板上之平坦化。替代地,可在含有本揭示內容之拋光襯墊的其他較硬材料之表面上列印軟聚合物材料以提供類似益處。
拋光襯墊300亦可包含安置於其中之無線通信設備600。除由第一特徵304提供之機械性質以外,第一特徵304亦可耦合至無線通信設備600,以使得可藉由無線通信設備600中之組件收集某種形式之電資料(例如,電容、電阻等)。第一特徵304可經由可在拋光襯墊製造製程期間列印之導線310或類似物耦合至無線通信設備600。在一個實施例中,導線310可由與用於列印拋光襯墊300之材料相容之一或多種導電材料列印。
在一個實施例中,第一特徵304可包含充當磨損指示器之導電元件。在一些實施例中,在拋光期間,表面特徵306可最終磨損掉且曝露第一特徵304。可在移除表面特徵306且曝露第一特徵304時起始由無線通信設備600接收之各種信號(聲學、電、壓力等)。回應於第一特徵304之曝露改變及/或產生信號可導致無線通信設備600與詢問器601(未展示)通信且將處理資料提供至控制器612。因此,處理系統之操作者可接收關於使用及拋光參數之即時資料。在一個實施例中,第一特徵304之曝露可指示拋光襯墊磨損且可替換拋光襯墊300以確保基板之適當拋光。
圖4係根據本文所述之實施例的具有形成於其中之一或多個觀察窗410之拋光襯墊400的示意性橫截面圖。拋光襯墊400可具有類似於拋光襯墊200之襯墊主體402。襯墊主體402可包含一或多個第二特徵406及自第二特徵406延伸供用於拋光之複數個第一特徵404。第二特徵406及第一特徵404可由類似於用於拋光襯墊200之第二特徵206及第一特徵204之材料之材料形成。可根據本揭示內容以任何適合圖案排列第一特徵404。
拋光襯墊400亦含有一或多個觀察窗410,此等觀察窗可由透明材料形成以允許在拋光期間觀察基板。觀察窗410可穿過第二特徵406或第一特徵404形成及/或鄰接第二特徵406或第一特徵404之部分。可在正藉由使用相加製造製程形成第一特徵402及第二特徵406時形成觀察窗410。在一些實施例中,觀察窗410可由實質上透明之材料形成,且因此能夠透射自供在CMP光學端點偵測系統中使用之雷射器及/或白光源發射之光。在一個實施例中,觀察窗410可由透明3D列印光聚合物形成。例如,觀察窗410可由聚甲基丙烯酸甲酯(polymethylmethacrylate; PMMA)形成。在一些實施例中,觀察窗410由以下材料形成:具有低折射率(為拋光漿料之折射率)且具有高光學透明度以減少自空氣/窗/水界面之反射且改良穿過觀察窗410往返於基板之光之透射。選擇材料之光學透明度以在由端點偵測系統之光學偵測器使用之光束之波長範圍內提供至少約25%(例如,至少約50%、至少約80%、至少約90%、至少約95%)光透射。典型的光學端點偵測波長範圍包含可見光譜(例如,自約400 nm至約800 nm)、紫外線(ultraviolet; UV)光譜(例如,在約300 nm至約400 nm)及/或紅外線光譜(例如,自約800 nm至約1550 nm)。
圖5係包含背托層506之拋光襯墊500之示意性透視剖視圖。拋光襯墊500包含基底材料層504及自基底材料層504凸出之複數個表面特徵502。拋光襯墊500可類似於上文所述之拋光襯墊200、300、400,惟背托層506附接至基底材料層504除外。背托層506可為拋光襯墊500提供所期望可壓縮性。背托層506亦可用於變更拋光襯墊500之總體機械性質以達成所期望硬度及/或具有所期望動態材料性質(例如,彈性模數及損耗模數)。背托層506可具有小於80肖氏A級之硬度值。
在一個實施例中,背托層506可由開孔式或閉孔式發泡體(諸如,具有空隙之聚氨酯或多聚矽氧)形成,以使得當施加壓力時巢孔(cell)/空隙崩潰且背托層506以可預測方式壓縮。在另一實施例中,背托層506可由天然橡膠、乙烯丙烯二烯單體(ethylene propylene diene monomer; EPDM)橡膠、腈或聚氯丙烯(氯丁橡膠)等等形成。
在一個實施例中,可藉由使用相加製造製程(諸如,3D列印製程)形成背托層506。在此配置中,背托層506可由單種聚合物材料或兩種以上聚合物之混合物形成以達成所期望機械及動態材料性質。在一個配置中,表面特徵502及基底材料層504直接形成於背托層506上。在一個實施例中,背托層506可由一或多種熱塑性聚合物形成,且因此可包含上文連同第一特徵204及/或第二特徵206所述之材料中之一或多者。
在某些實施例中,無線通信設備600可安置於拋光襯墊500中或耦合至拋光襯墊500。在一個實施例中,無線通信設備600可安置於基底材料層504或表面特徵502中。在所圖示之實施例中,無線通信設備600可安置於背托層506中。不管無線通信設備600之位置如何,無線通信設備600可經定大小以跨越多個表面特徵502感測一或多個處理參數。例如,可由無線通信設備600同時感測兩個或兩個以上表面特徵502。因此,可跨越拋光表面之較大區域感測各種處理參數(溫度、壓力、電導率等)而非感測單個表面特徵502。藉由感測拋光表面之較大區域,可由無線通信設備600偵測區域上平均之信號。在利用多個無線通信設備600之實施例中,可藉由結合來自個別無線通信設備600之資料來決定總體上較平均之信號。資訊收集系統配置實例
圖6圖示根據本文所述之實施例的其中分別併入有無線通信設備600及詢問器601之拋光襯墊200及平台102之部分示意性橫截面圖。拋光襯墊200意欲表示經配置以在其中併入有整合感測或計量設備之任何拋光襯墊。例如,拋光襯墊可藉助安置於其中之無線通信設備600來列印、澆鑄或模製。在一個實施例中,無線通信設備600經配置以與詢問器以無線方式通信。無線通信協定之實例包含近場通信技術、藍芽® 、光學信號傳輸技術、聲學信號傳輸技術、射頻通信技術及其他適合無線通信技術。替代地,無線通信設備600可硬線連接至詢問器601以促進其間的通信。
儘管圖6中圖示單個無線通信設備600及單個詢問器601,但應預期,可在襯墊及平台中分別實施多個無線通信設備600及詢問器601(參見圖1)。另外,可由單個詢問器601感測一或多個無線通信設備600。亦應預期,無線通信設備600可定位於襯墊200之表面內或定位於此表面上各個位置處,諸如,中心位置(亦即,圓形襯墊之原點或旋轉軸重合點處)、中間位置(亦即,自圓形襯墊之原點之1/2半徑)或外部位置(亦即,毗鄰之圓形襯墊之圓周)。亦可結合利用多個NFC設備600且可一起利用各個位置(亦即,中心位置及外部位置,或中心、中間及外部位置)。藉由相互協調地利用多個無線通信設備600,將由於跨越襯墊20在多個位址處收集資料而產生處理環境之較綜合視角。一般而言,無線通信設備600相對於襯墊200定位以使得基板110之路徑在處理期間跨越拋光系統100之拋光表面在拋光製程之各個點期間重疊。
類似地,詢問器601可定位於平台102內各個位置處,諸如中心、中間及外部位置。詢問器之位置可獨立於無線通信設備600位置決定或可至少部分地藉由無線通信設備位置來決定以促進無線通信設備600與詢問器601之間的通信。
安置於平台102中之詢問器601一般而言包含讀取器608及天線610。讀取器可包含或耦合至電源(諸如,RF電源)且可經配置以經由天線610傳輸待由無線通信設備600接收之信號。在一個實施例中,讀取器608可除其他設備外亦包含RF調變器及詢問器控制器,此詢問器控制器經配置以管理讀取器608之信號傳輸及接收。在一個實施例中,RF調變器可經配置以產生及/或調變具有約13.56 MHz之波長之RF信號。在被動標籤實施例中,詢問器601及無線通信設備600可以具有小於約12吋(例如,小於約2吋,諸如小於約1吋)之空間關定位。在主動標籤實施例中,詢問器601與無線通信設備600之間的空間關可大於被動標籤實施例且可取決於可用於信號傳輸之電力。
無線通信設備600一般而言包含標籤602及天線606,此天線耦合至標籤602或整體地製造於標籤602中。在某些實施例中,感測器604亦可以通信方式耦合至標籤602。端視所期望實施方式,標籤602可為主動標籤或被動標籤。在主動標籤實施例中,電源(諸如,電池)可電耦合至標籤且將適合電力提供至標籤,因此標籤可經由形成於裝置之間的通信鏈路607將信號傳輸至詢問器601。應預期,主動標籤可實施於其中將電力耦合至標籤之實施例中。另外,主動標籤可用於其中由標籤傳輸之資料意欲在大於可在使用被動標籤時所獲得距離之距離處由詢問器601感測之實施例中。然而,應預期,主動標籤可用於其中會適合地利用被動標籤之近場通信實施例中。
在被動標籤實施例中,標籤可經配置以自詢問器601接收信號(諸如,射頻信號)且利用所接收信號之電磁能以經由通信鏈路607將含有標籤602獨有之一定量之資料的信號傳輸(或反射)回詢問器601。被動標籤可用於其中以小於距標籤602之臨界通信距離而定位詢問器601之實施例中。臨界通信距離一般而言定義為超出後便不由詢問器601可靠地接收由被動標籤反射之電磁信號之距離。臨界通信距離可端視與由詢問器601產生之信號相關聯之電力量和標籤傳輸器之大小及電力而根據實施例變化。下文參考圖7論述被動標籤之更詳細描述。
圖7圖示根據本文所述之實施例的無線通信設備600之電組件示意圖。圖7中所圖示之實施例意欲表示基本功能標籤,且因此應預期,可實施各種其他電組件設計或配置以達成標籤之所期望功能。標籤602一般而言包含電晶體702、電感器704、電容器706及積體電路708。在一個實施例中,積體電路708可表示經配置以儲存標籤602獨有之資料之記憶體。在另一實施例中,記憶體可經配置以在將由感測器604接收之資料傳輸至詢問器601之前儲存此資料。在某些實施例中,電感器704(諸如,電感線圈)可用作天線以在詢問器601與電感器704之間接收且傳輸信號。在一個實施例中,電感器704係天線606且用於經由形成於裝置之間的通信鏈路將含有來自標籤602之資料之信號以電感方式反射至詢問器601。
重新參考圖6,無線通信設備600及更特定而言標籤602可定位於拋光襯墊200內在襯墊200之上表面208下方,此上表面在處理期間接觸基板。在一個實施例中,無線通信設備600定位於上表面208下方之約200 µm與約500 µm之間的距離620處。可基於由標籤602及/或感測器604執行之感測之所期望類型及襯墊200之表面之形貌(例如,凹槽、通道或其他特徵)而選擇距離620。在另一實施例中,標籤602可定位於頂部表面208下方之距離620處但感測器604可較靠近於頂部表面208。儘管僅圖示一個感測器604,但應預期,可併入有多個感測器以提供一系列追蹤、感測及計量資料以監控及改良拋光效能。例如,可現場(亦即,在拋光期間)執行由無線通信設備600決定之拋光效能且可現場調整處理參數以改良基板拋光特性。可感測之處理參數包含溫度資料、壓力資料、電導率資料、彈性模數資料、光學資料、聲學資料、膜厚度資料及經配置以在基板拋光製程期間量測處理參數之其他資料類型。
在一個實施例中,安置於感測器604與襯墊200之拋光表面之間的襯墊200之區622可經配置以增強藉由使用耦合至區622之感測器604對所期望處理參數之量測。在一個實施例中,區622可自感測器604延伸至襯墊200之頂部表面208,或在另一實施例中,區622可自感測器604延伸至凹槽218。藉由減小感測所期望處理參數之「阻力」,可即時達成處理參數之較準確量測。例如,若感測器604係溫度感測器,則區622可由導熱係數大於襯墊200之其餘部分之導熱材料形成。藉由減小襯墊200之拋光表面與感測器604之間的熱阻,可以較大速率達成由感測器604進行之信號偵測。
在另一實例中,若感測器604係壓力感測器,則區622可由彈性模數大於襯墊200之其餘部分之材料形成。換言之,區622可比周圍襯墊材料更硬以促進在拋光表面處對所施加壓力之較準確感測。在另一實例中,若感測器604係經配置以偵測拋光表面處之電導率之改變的電導率感測器,則區622可由含有電導率大於周圍襯墊材料之區之材料形成。因此,可減小區622中之電阻,此可改良感測器604自拋光表面接收信號之資料速率。應預期,可採用各種其他感測器且可在區622中利用適當配置之材料以改良處理參數偵測之準確性。一般而言,可經由3D列印製程有利地採用區622之製造,3D列印製程以成本高效且可控制方式達成襯墊200內之材料選擇性。
感測器604意欲表示適於在CMP製程中使用之各種類型之感測及計量設備。在一個實施例中,感測器604可經配置用於拋光系統識別及追蹤。例如,拋光系統100可經配置以在將具有無線通信設備600之拋光襯墊安裝至平台102時參與操作。在此實施例中,平台102中之詢問器601將自標籤602接收資料,該資料指示已將正確類型之拋光襯墊安裝於拋光系統上。在經由由詢問器601接收之標籤資料鑑認拋光襯墊類型之後,拋光系統101將「解鎖」且參與全部拋光功能性。在一些實施例中,在經由所接收標籤資料鑑認拋光襯墊類型之後,拋光系統101基於所接收標籤資料調整一或多個拋光參數。在一個實例中,所接收標籤資料可包含關於拋光襯墊類型、襯墊配置(例如,表面特徵502、基底材料層504以及背托層506之類型、厚度)、襯墊200之表面結構之資訊或其他有用資訊。
在另一實施例中,感測器604可用於追蹤安裝於拋光系統100上之拋光襯墊之使用統計。例如,可由無線通信設備600追蹤已利用襯墊之循環數量且可將彼資料傳輸至詢問器601。可解譯資料且可較準確地追蹤襯墊壽命以確保以提供經改良拋光特性之間隔替換襯墊。在一些實施例中,拋光系統101基於在經傳輸標籤資料中接收之拋光襯墊之經追蹤使用統計而調整一或多個拋光參數。
在一些實施例中,感測器604(或在某些實施例中,多個感測器)可經配置以偵測一或多個拋光參數。在一個實例中,感測器604可為熱感測器(例如,RTD、熱電偶),此熱感測器包含經配置以偵測拋光襯墊200、漿料、基板110或其任何組合之溫度的組件。在另一實例中,感測器604可為聲學感測器(未展示),此聲學感測器經配置以決定拋光製程期間的聲學振動改變。電導率感測器係可用於無線通信設備600中之另一類型之感測器604。在此實例中,電導率感測器(未展示)可經配置以偵測漿料中之金屬負載(亦即,金屬濃度之增加)或由於自襯墊200之各個區之漿料清潔所致的跨越襯墊200之表面之電導率改變。在一個配置中,電導率感測器可包含兩個電極(未展示),此等電極與標籤602及無線通信設備600通信且各自曝露於拋光表面208處。接著可使用經曝露電極以藉由使用標籤602中所找到之組件跨越電極施加電壓而直接量測漿料、基板表面及/或襯墊200之表面之電導率。在一些實施例中,拋光系統101基於自標籤602遞送至詢問器601之經傳輸標籤資料中所接收之一或多個拋光參數資料而調整一或多個拋光參數。
感測器604之另一實例係加速度計(例如,MEMS裝置),此加速度計可經配置以感測角動量、動態力、相對於角旋轉方向自平面向外之振動移動及/或扭矩之改變。感測器604之額外實例係用於感測拋光期間抵靠著基板110之襯墊200之抗剪應力的摩擦力感測器,諸如,應變儀。感測器604之又一實施例係壓力感測器,諸如荷重計(例如,MEMS荷重計),此壓力感測器可經配置以量測施加至襯墊200之力及跨越基板110之地帶壓力(亦即,腔室122a、122b)。在一些實施例中,拋光系統101基於加速度計、摩擦力感測器、自標籤602傳送至詢問器601之抗剪應力及/或負載資料而調整一或多個CMP拋光參數。
上述感測器實施例可單獨或相互結合地用於在拋光期間更有效地量測處理參數。應預期,可實施拋光製程之現場處理及/或即時調整以改良(例如)拋光均勻性及拋光端點偵測。一般而言,回應於一或多個經偵測處理參數而由感測器604產生之信號可由標籤602編碼且由天線606傳輸。拋光系統101經配置以基於在自標籤602遞送至詢問器601及控制器612之經傳輸標籤資料中所接收之感測器資料而調整一或多個拋光製程參數。
詢問器601亦可以通信方式耦合至基於處理器之系統控制器,諸如,控制器612。例如,控制器612可經配置以導致由讀取器608產生信號。控制器612亦可經配置以接收且分析經由詢問器601自無線通信設備602接收之資料。控制器612包含可程式化中央處理單元(central processing unit; CPU)614,此可程式化中央處理單元可與耦合至拋光設備100之各種組件之記憶體618(例如,非依電性記憶體)及大容量儲存裝置、輸入控制單元及顯示單元(未展示)(諸如,電源、時鐘、快取記憶體、輸入/輸出(input/output; I/O)電路及類似物)一起操作以促進基板拋光製程之控制。控制器612亦可包含用於經由拋光設備100中之系統級感測器監控基板處理之硬體。
如上文所述,為促進拋光設備100(且更特定而言,無線通信設備600及詢問器601)之控制,CPU 614可為可在用於控制各種腔室及子處理器之工業環境(諸如,可程式化邏輯控制器(programmable logic controller; PLC))中使用的任何形式之通用電腦處理器中之一者。記憶體618耦合至CPU 614且記憶體618係非暫時性的且可為現成記憶體中之一或多者,諸如隨機存取記憶體(random access memory; RAM)、唯讀記憶體(read only memory; ROM)、軟碟機、硬磁碟或任何其他形式之數位儲存器(本端或遠端)。支援電路616耦合至CPU 614以用於以習用方式支援處理器。經由詢問器601來自無線通信設備600之信號產生指令、資料接收及分析可由記憶體618執行且通常作為軟體常式儲存於記憶體618中。軟體常式亦可由第二CPU(未展示)儲存及/或執行,此第二CPU遠離正由CPU 618控制之硬體。
記憶體618為含有指令之電腦可讀儲存媒體之形式,此等指令在由CPU 614執行時促進拋光設備100之操作,包含無線通信設備600及詢問器601之操作。記憶體618中之指令為程式產品(諸如,實施本揭示內容之方法之程式)形式。程式碼可依照若干不同程式設計語言中之任何一者。在一個實例中,本揭示內容可實施為儲存於電腦可讀儲存媒體上供與電腦系統一起使用之程式產品。程式產品之程式定義實施例(包含本文所述之方法)之功能。說明性電腦可讀儲存媒體包含但不限於:(i)不可寫入儲存媒體(例如,電腦內之唯讀記憶體裝置諸如可由CD-ROM驅動機讀取之CD-ROM碟、快閃記憶體、ROM晶片或任何類型之固態非依電性半導體記憶體),資訊永久地儲存此儲存媒體上;以及(ii)可寫入儲存媒體(例如,磁碟驅動機或硬碟驅動機內之軟碟或任何類型之固態隨機存取半導體記憶體),在此儲存媒體上儲存可變更資訊。此等電腦可讀儲存媒體在攜載針對本文所述之方法之功能的電腦可讀指令時為本揭示內容之實施例。
圖8圖示根據本文所述之實施例的圖示併入有無線通信設備600之保持環120及平台102之拋光頭108的部分橫截面圖。一般而言,保持環120經配置且經定位以防止拋光製程期間基板110之不期望移動。如圖所示,保持環120可自撓性膜132向外徑向地安置。因此,保持環120毗鄰於且極接近於襯墊106及平台102而安置。在某些實施例中,保持環120可被可移除地耦合至拋光頭108以促進保持環120之替換(若需要)。
在一個實施例中,無線通信設備600可安置於保持環120之面向襯墊106之表面上或界定此表面。替代地,無線通信設備600可安置於保持環120內遠離保持環120之面向襯墊106之表面的另一位置處。無線通信設備600及詢問器601可如此接近地安置以允許拋光製程期間的近場通信。因此,將一或多個感測器(諸如,上文所述之感測器)併入至保持環120中可為有利。
在一個實施例中,可藉由3D列印製程製造保持環120及無線通信設備600。3D列印製程可達成保持環120及無線通信設備600之同時製作。替代地,可在保持環120之3D列印期間維持空隙且隨後可將預製造之無線通信設備插入至此空隙中。在某些實施例中,無線通信設備600可提供關於經由拋光系統100旋轉拋光頭108之處理資料。亦應預期,除非諸如襯墊106、平台102及拋光頭108的適當配置組件每一者皆安裝於拋光系統100上,否則保持環100及無線通信設備600可用於「鎖定」拋光系統100之操作。亦可由安置於保持環120中之無線通信設備600偵測其他拋光製程參數監控及感測,諸如熱、電導率、壓力、應力及聲學感測。
圖9圖示根據本文所述之實施例的併入有無線通信設備600之撓性膜132及平台102之部分橫截面圖。撓性膜132一般而言經配置以將基板110緊固於撓性膜上且在拋光期間推動基板110抵靠著襯墊106。撓性膜132一般而言利用壓力梯度以將基板110耦合於撓性膜上以防止拋光製程期間之基板110之不期望移動。在某些實施例中,撓性膜132可被可移除地耦合至拋光頭108以促進撓性膜132之替換(若需要)。
在一個實施例中,無線通信設備600可安置於界定腔室122a、122b中之任一者或此兩者的撓性膜132之表面上或界定此表面。替代地,無線通信設備600中之一或多者可安置於撓性膜132之一部分內。因此,撓性膜132毗鄰於且極接近於正抵靠著襯墊106及平台102推動之基板110之後表面安置。無線通信設備600及詢問器601可如此接近地安置以允許拋光製程期間的近場通信。因此,可有利於將一或多個感測器(諸如,上文所述之感測器)併入至撓性膜132中。
在一個實施例中,可藉由3D列印製程製造撓性膜132及無線通信設備600。3D列印製程可達成撓性膜及無線通信設備600之同時製作。在此實施例中,無線通信設備600可全部地或部分地安置於撓性膜132內。在此實例中,應預期,無線通信設備600可展現適合撓度以容許撓性膜132之撓曲。替代地,可在撓性膜132之3D列印期間維持空隙且隨後可將預製造之無線通信設備插入至此空隙中。
類似於安置於保持環120內之無線通信設備,無線通信設備600可提供關於經由拋光系統100旋轉包含撓性膜132之拋光頭108之處理資料。在另一實施例中,無線通信設備600可提供關於撓性膜132之加壓及降壓循環之處理資料。亦應預期,除非諸如襯墊106、平台102及拋光頭108的適當配置組件每一者皆安裝於拋光系統100上,否則撓性膜132及無線通信設備600可用於「鎖定」拋光系統100之操作。如上文所述,在提供抵靠著基板110施加之壓力資料之監控及感測中,併入有無線通信設備600之撓性膜132可尤其有用。亦可由安置於撓性膜132中之無線通信設備600執行其他拋光製程參數監控及感測,諸如熱、電導率、壓力、應力及聲學感測。
應預期,可結合圖8及圖9之實施例以提供具有安置於保持環120及撓性膜132兩者內之無線通信設備600之拋光系統100。一般而言,無線通信設備600可經配置以在拋光系統100內之不同位置處感測相同處理參數或無線通信設備600可經配置以感測不同處理參數。此外,無線通信設備600可製造至拋光頭108之其他組件(諸如,3D列印之組件)中。另外,耦合至保持環120或撓性膜132之無線通信設備600可與詢問器601通信,此詢問器可固定地安置於平台102內。由詢問器601接收之信號可由控制器612分析且可自拋光頭108移除保持環120及/或撓性膜132。例如,若來自無線通信設備600之信號指示保持環120及/或撓性膜132之不良處理效能,則可替換保持環120及/或撓性膜132。替代地,若保持環120及/或撓性膜132未經配置供在拋光頭108中使用,則控制器612可指示其不相容性且可用適當配置組件替換保持環120及/或撓性膜132。
無線通信設備600一般而言經配置以按毫秒資料速率或更大速率收集資料。因此,適合於偵測且傳輸處理參數資料之時間常數可為無線通信設備600之優點。可自無線通信設備600之相對於某些實施例中偵測之參數之實體位置導出經改良之時間常數。因此,可執行即時參數感測且將此即時參數感測傳達至控制器612以改良拋光製程。
另外,可連續地或間歇地操作無線通信設備600。例如,若無線通信設備600安置於襯墊200內,則無線通信設備600可經配置以連續地感測各種處理參數。替代地,可間歇地操作無線通信設備600以在正在毗鄰無線通信設備600之區中拋光基板時偵測處理參數。類似地,可連續地或間歇地操作耦合至保持環120或撓性膜132之無線通信設備600。控制器612可耦合至可決定拋光頭108相對於詢問器601之位置之鄰近感測器(未展示)或類似物。當拋光頭定位於適合於由詢問器601通信之區中時,鄰近感測器可將信號提供至控制器612。控制器612可導致詢問器601起始無線通信設備600與詢問器601之間的信號傳輸。當拋光頭108(及耦合至保持環120或撓性膜132之無線通信設備600)位於適合於與詢問器601通信之位置中時,鄰近感測器可發信號至控制器612且控制器612可終止自詢問器601之信號傳輸及/或接收。
在利用多個無線通信設備600之實施例中,詢問器601可經配置以與多個無線通信設備600通信且經由控制器612協調拋光。替代地,可利用多個詢問器。在此實施例中,可將單個無線通信設備以通信方式耦合至單個詢問器。應預期,可利用任何數目之無線通信設備及詢問器以改良拋光製程監控及感測。若利用多個無線通信設備及詢問器,則可將各種波長濾波器及/或電磁屏蔽設備併入至拋光系統中以減少或消除無線通信設備及/或詢問器之間的不期望之串擾。
圖10圖示根據本文所述之一個實施例的製造具有RFID標籤之拋光襯墊之方法1000。儘管下文所述之圖10及圖11之實施例係針對拋光襯墊之相加製造,但應預期,此等實施例可應用於其他拋光系統組件,諸如保持環及撓性膜等等。此外,可利用諸如澆鑄及模製的其他製造製程以形成具有安置於其中之RFID標籤之襯墊。
在操作1010處,列印拋光襯墊之第一部分。用於第一部分之適合材料可包含關於圖2所提及之材料,但一般而言包含經配置以拋光基板之聚合材料。關於圖12更詳細地描述列印製程,諸如3D列印製程。拋光襯墊之第一部分可為基底層或襯墊特徵之結合。
在操作1020處,在第一部分上列印無線通信設備600,諸如RFID標籤。用於列印RFID標籤之適合材料一般而言包含導電材料或半導電材料。導電及/或半導電聚合物材料之實例包含但不限於聚(茀)、聚(伸苯)、聚(芘)、聚(薁)、聚(萘)、聚(乙炔)、聚(對伸苯伸乙烯)、聚(吡咯)、聚(咔唑)、聚(吲哚)、聚(氮呯)、聚(苯胺)、聚(噻吩)、聚(3,4-伸乙二氧基噻吩)及聚(對伸苯硫醚)材料等等,包含上述組合及混合物。另外,可利用含有所期望導電或半導電性質之奈米顆粒之材料,諸如油墨。例如,可利用銀或金奈米顆粒來形成導電油墨或可利用矽奈米顆粒來形成半導電油墨。上述奈米顆粒可併入至上文所提及之聚合物材料或可與其他適合材料一起利用。在其他實施例中,可藉由相加製造製程(3D列印)或絲網列印製程沉積金屬材料來列印RFID標籤之各部分。
在操作1030處,在RFID標籤上方且圍繞RFID標籤列印拋光襯墊之第二部分。亦可在拋光襯墊之第一部分上方列印拋光襯墊之第二部分。如此,RFID標籤可全部地或部分地囊封於拋光襯墊內。在一個實施例中,拋光襯墊之第二部分可經配置以接觸且拋光基板。在另一實施例中,拋光襯墊之第一部分可經配置以接觸且拋光基板。
圖11圖示根據本文所述之一個實施例的製造併入有無線通信設備600(諸如,RFID標籤)之拋光襯墊之方法1100。在操作1110處,可列印拋光襯墊之第一部分,其中具有形成於其中之凹部或空隙。凹部可為其中實質上不存在襯墊材料之第一部分之區。凹部可經定大小而具有適合尺寸以容納預製造之RFID標籤。
在操作1120處,可將預成型之RFID標籤插入至形成於第一部分中之凹部中。可在標籤基板上形成RFID標籤或可將RFID標籤壓入配合、黏結、黏附或以其他方式機械地耦合至第一部分處於凹部內。在操作1130處,可在RFID標籤上方且圍繞RFID標籤列印拋光襯墊之第二部分。因此,預製造之RFID標籤可經囊封且安置於襯墊之第一及第二部分內。
在關於圖10及圖11所述之實施例中,標籤列印製程及凹部形成製程可考慮到最終形成之襯墊之可壓縮性。由於RFID標籤一般而言由可具有不同於第一及第二襯墊部分之材料之機械性質及動態性質之材料形成,因此應預期,可將各種微結構元件併入至襯墊之RFID標籤或部分中以提供跨越襯墊具有較均勻機械性質及動態性質之襯墊。亦應預期,可將各種其他組件(諸如,佈線)整體地製造至拋光襯墊中。在一些實施例中,調整安置於RFID標籤下方及/或RFID標籤上方之經添加材料之層之組合物及/或性質以跨越襯墊提供均勻機械性質及動態性質。換言之,藉由以下方式可補償拋光襯墊之局域化區內之RFID標籤之存在:藉由調整使用本文所述之相加製造製程沉積之材料及/或材料結構來調整RFID標籤下方、RFID標籤上方或毗鄰於RFID標籤之材料之材料性質。因此,藉由使用相加製造製程形成且具有安置於其中之一或多個RFID標籤之襯墊、膜、保持環及其他結構可具有較均勻機械及動態性質,即使將一或多個RFID標籤安置於所形成裝置內亦如此。
圖12係根據本文所述之實施例的用於製造拋光襯墊及其他CMP設備之3D列印設備1200之示意性剖視圖。儘管參考拋光襯墊(諸如,拋光襯墊200、300、400及500)構成下文所述之特定實例,但應預期,亦可藉由3D列印製程製造其他CMP設備,諸如保持環(亦即,保持環120)及撓性膜(亦即,撓性膜132)。在一個實施例中,可在支撐物1202上列印拋光襯墊200。由液滴噴射列印機1206依據CAD(電腦輔助設計)程式形成拋光襯墊200。液滴噴射列印機1206及支撐物1202可在列印製程期間彼此相對移動。
液滴噴射列印機1206一般而言包含具有用於施配前驅物之噴嘴之一或多個列印頭。可以諸如液體或粉末形式的各種形態提供前驅物。在所圖示之實施例中,液滴噴射列印機1206包含具有第一噴嘴1210之第一列印頭1208及具有第二噴嘴1212之第二列印頭1214。第一噴嘴1210可經配置以施配用於第一材料(諸如,軟或彈性材料)之液體前驅物,而第二噴嘴1212可用於施配用於第二材料(諸如,硬材料)之液體前驅物。在另一實施例中,頭1208、1214及噴嘴1210、1212可經配置以加熱聚合前驅物以使前驅物以可流動或類液體狀態流動以達成所期望設備之形成。
在其他實施例中,液滴噴射列印機1206可包含兩個以上列印頭以形成具有兩種以上材料之拋光襯墊。例如,在關於列印RFID標籤(諸如,無線通信設備600)之實施例中,第一噴嘴1210可經配置以施配導電或半導電材料之聚合前驅物以列印標籤之導電組件。第二噴嘴1212可經配置以施配用於非導電標籤組件之非導電材料之聚合前驅物。可在經選擇位置或區處施配前驅物以形成拋光襯墊200。此等經選擇位置集體地形成目標列印圖案且可儲存為CAD相容檔案,接著由控制液滴噴射列印機1206之電子控制器1204(例如,電腦)讀取此CAD相容檔案。
本文所述之3D列印製程包含但不限於聚合物噴出沉積、噴墨列印、熔融沉積模型化、黏結劑噴出、粉末床熔融、選擇性雷射燒結、立體微影、還原光聚合數位光處理、薄片層壓及直接能量沉積以及其他3D沉積或列印製程。
在3D列印之後,可藉由固化來凝固拋光襯墊。可藉由將經列印之拋光襯墊加熱至固化溫度來執行固化。替代地,可藉由將經列印之拋光襯墊曝露至由紫外線光源產生之紫外線來執行固化。
3D列印提供用於產生由不同材料及/或不同材料組合物形成之拋光襯墊之方便且高度可控制製程。例如,3D列印使得能夠將NFC設備(諸如,RFID標籤)高效且成本有效地併入至拋光襯墊。
例如,拋光襯墊200可由兩種或兩種以上材料之混合物形成。在此實施例中,襯墊及襯墊特徵可由一或多種第一材料形成且整體地安置於襯墊內之無線通信設備600可由一或多種第二材料形成。在一個實施例中,一或多種第一材料主要為非導電而一或多種第二材料主要為導電或半導電。在此實施例中,可用經由第一列印頭1208自第一噴嘴1210擠壓之第一材料液滴之混合物形成襯墊200及拋光特徵204、206。無線通信設備(本文未展示但圖6中更詳細地圖示)可用經由第二列印頭1214自第二噴嘴1212擠壓之第二材料液滴之混合物形成。列印頭1210可首先與對應於拋光特徵204、206之像素對準且在預定像素上施配液滴。列印頭1212可接著與對應於無線通信設備之像素對準且在預定像素上施配液滴。因此,可在順序製程中形成拋光特徵204、206及無線通信設備。亦應預期,端視3D列印設備1200之設計,可同時形成拋光特徵204、206及無線通信設備600。
可根據一或多種第一材料之比率及/或分配來調整或調諧拋光特徵204、206之性質。可根據一或多種第二材料之比率及/或分配來形成無線通信設備600。在一個實施例中,可藉由選擇自第一噴嘴1210擠壓之液滴之大小、位置、速度及/或密度來控制拋光特徵204、206之組合物。類似地,藉由選擇自第二噴嘴1212擠壓之液滴之大小、位置、速度及/或密度來控制無線通信設備之組合物。因此,應預期,本揭示內容之實施例涵蓋用複數種材料形成拋光襯墊且可利用此材料來製造具有安置於其中之無線通信設備之拋光襯墊。相加製造製程實例
在一個實施例中,3D列印可用於製造拋光襯墊、保持環、撓性膜及本文所述之其他CMP拋光設備組件。在一個實施例中,可藉由針對3D物件之每一層的組件之CAD模型之使用及用於映射關於此等組件的資訊之切片演算法之使用來執行形成3D物件之方法。可藉由在粉末床之表面上方分配粉末來形成物件之層。可接著沉積經挑選之黏結劑材料以便選擇性地接合其中待形成物件之區之顆粒。可降低支撐粉末床及正製造之組件之致動器(例如,活塞)以形成下一粉末層。在形成每一層之後,重複製程後接著進行最終固化製程(例如,UV曝露或熱處理)以完成物件之一部分。由於3D列印可對材料組合物、微結構及表面紋理實行本端控制,因此藉助本文所述之方法達成各種(及先前難達到的)幾何形狀。
在一個實施例中,可在可由電腦顯現裝置或電腦顯示裝置讀取之資料結構中表示如本文所述之拋光襯墊。圖12圖示根據一個實施例的具有電腦可讀媒體之電腦系統(亦即,電子控制器1204)之示意性表示。電腦可讀媒體可含有表示拋光襯墊之資料結構。資料結構可為電腦檔案且可含有關於一或多個組件之結構、材料、紋理、物理性質或其他特性之資訊。資料結構亦可含有程式碼,諸如實現電腦顯現裝置或電腦顯示裝置之經選擇功能性之電腦可執行碼或裝置控制碼。資料結構可儲存於電腦可讀媒體上。電腦可讀媒體可包含實體儲存媒體,諸如磁性記憶體或任何方便實體儲存媒體。實體儲存媒體可為可由電腦系統讀取以在電腦螢幕或實體顯現裝置(其可為相加製造裝置,諸如,3D列印機)上顯現由資料結構表示之組件。
儘管上文係針對本揭示內容之實施例,但可在不背離本揭示內容之基本範疇之情況下想到本揭示內容之其他及額外實施例,且本揭示內容之範疇由下文之申請專利範圍決定。
100:拋光設備 101:拋光系統 102:平台 104:中心軸 106:襯墊 108:拋光頭 110:基板 112:拋光表面 114:中心軸 116:拋光流體 118:遞送臂 120:保持環 122a:腔室 122b:腔室 124a:通路 124b:通路 126:夾環 128:夾環 130:驅動軸件 132:撓性膜 134:活頁 136:背部表面 138:安裝部分 140:基底總成 200:襯墊 202:主體 204:第一特徵 206:第二特徵 208:上表面 210:高度 212:高度 214:寬度 216:間距 218:凹槽 300:拋光襯墊 302:基底層 304:第一特徵 306:表面特徵 308:外表面 310:導線 400:拋光襯墊 402:第一特徵/襯墊主體 404:第一特徵 406:第二特徵 410:觀察窗 500:拋光襯墊 502:表面特徵 504:基底材料層 506:背托層 600:無線通信設備 601:詢問器 602:標籤 604:感測器 606:天線 607:通信鏈路 608:讀取器 610:天線 612:控制器 614:中央處理單元 616:支援電路 618:記憶體 620:距離 622:區 702:電晶體 704:電感器 706:電容器 708:積體電路 1000:方法 1010:操作 1020:操作 1030:操作 1100:方法 1110:操作 1120:操作 1130:操作 1200:列印設備 1202:支撐物 1204:電子控制器 1206:液滴噴射列印機 1208:第一列印頭 1210:第一噴嘴 1212:第二噴嘴 1214:第二列印頭
儘管下文簡要概述其中可詳細地理解本揭示內容之上述特徵之方式,但可參考附圖中圖示其中之一些之實施例更具體描述本揭示內容。然而,應注意,附圖僅圖示例示性實施例且因此不應視為對其範疇之限制,可承認其他同樣有效之實施例。
圖1A圖示根據本文所述之實施例的拋光設備之示意性剖視圖。
圖1B圖示根據本文所述之實施例的圖1A之拋光設備之載架頭之更詳細橫截面圖。
圖2係根據本文所述之實施例的拋光襯墊之示意性透視剖視圖。
圖3係根據本文所述之實施例的拋光襯墊之示意性橫截面圖。
圖4係根據本文所述之實施例的具有一或多個觀察窗之拋光襯墊之示意性橫截面圖。
圖5係根據本文所述之實施例的包含支撐層之拋光襯墊之示意性橫截面圖。
圖6圖示根據本文所述之實施例的分別將RFID標籤及讀取併入於其中之拋光襯墊及平台之部分示意性橫截面圖。
圖7圖示根據本文所述之實施例的RFID標籤之電組件示意圖。
圖8圖示根據本文所述之實施例的併入有近場通信組件之拋光頭保持環及平台之部分橫截面圖。
圖9圖示根據本文所述之實施例的併入有近場通信組件之拋光頭膜及平台之部分橫截面圖。
圖10圖示根據本文所述之一個實施例的製造具有RFID標籤之拋光襯墊之方法。
圖11圖示根據本文所述之一個實施例的製造具有RFID標籤之拋光襯墊之方法。
圖12係根據本文所述之實施例的用於製造拋光襯墊之設備之示意性剖視圖。
為促進理解,在可能的情況下已使用相同元件符號來指定圖中所共用之相同元件。應預期,可在不進一步贅述的情況下將一個實施例之元件及特徵併入於其他實施例中。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
102:平台
200:襯墊
208:上表面
218:凹槽
600:無線通信系統
601:詢問器
602:標籤
604:感測器
606:天線
607:通信鏈路
608:讀取器
610:天線
612:控制器
614:中央處理單元
616:支援電路
618:記憶體
620:距離
622:區

Claims (20)

  1. 一種拋光襯墊設備,包括:一經列印之聚合主體,包括:複數個拋光特徵,包括一第一材料且界定一拋光表面,該拋光表面經配置以接觸一基板;及一或多個基底特徵,包括與該第一材料不同的一第二材料,其中該一或多個基底特徵與該複數個拋光特徵之該拋光表面相距一距離安置,並且該一或多個基底特徵與該複數個拋光特徵沿平行於該拋光表面的一方向以一交替排列安置;以及一RFID標籤,整體地安置於該經列印之聚合主體內,其中該RFID標籤由一導電聚合物材料列印而成。
  2. 如請求項1所述之設備,其中該第一材料及該第二材料選自由以下各項組成之群組:環氧樹脂、酚類、胺、聚酯、胺甲酸乙酯、矽、丙烯酸酯、上述之混合物、共聚物以及接枝物。
  3. 如請求項1所述之設備,其中該RFID標籤具有一電感天線,該電感天線經配置以使用一無線通信技術與一詢問器通信。
  4. 如請求項1所述之設備,其中該RFID標籤定位於距該拋光表面200μm與500μm之間。
  5. 如請求項1所述之設備,其中一凹部形成於該經列印之聚合主體內,並且該RFID標籤耦合至形成於該經列印之聚合主體內的該凹部之一表面。
  6. 如請求項1所述之設備,其中該導電聚合物材料包括導電奈米顆粒。
  7. 如請求項1所述之設備,其中該複數個拋光特徵形成於該一或多個基底特徵上,該複數個拋光特徵具有一第一高度,該一或多個基底特徵具有一第二高度,其中該第一高度大於該第二高度。
  8. 一種化學機械拋光系統,包括:一平台,具有一支撐表面;一經列印之拋光襯墊,具有安置於其中之一RFID標籤,其中該RFID標籤由一導電聚合物材料列印而成,及其中該RFID標籤儲存與該經列印之拋光襯墊之性質相關聯的複數個資訊,該經列印之拋光襯墊安置於該平台之該支撐表面上方並且包括:複數個拋光特徵,包括一第一材料且界定一拋光表面,該拋光表面經配置以接觸一基板,其中該複數個拋光特徵以同心環排列;及一或多個基底特徵,包括與該第一材料不同的一第二材料,其中該一或多個基底特徵與該拋光表面相距一距離安置,及其中該一或多個基底特徵與該複數 個拋光特徵沿平行於該拋光表面的一方向以一交替排列安置;以及一拋光頭,與該平台相對地定位,其中該拋光頭經配置以推動一基板抵靠著該經列印之拋光襯墊之該拋光表面。
  9. 如請求項8所述之拋光系統,進一步包括:一詢問器,耦合至該平台,其中該詢問器及該RFID標籤經配置以使用一無線通信技術相互通信。
  10. 如請求項8所述之拋光系統,其中該經列印之拋光襯墊由一非導電聚合物材料形成,且該RFID標籤由一導電聚合物材料形成。
  11. 如請求項8所述之拋光系統,進一步包括:一保持環,該保持環包含安置於其中的一RFID標籤。
  12. 如請求項8所述之拋光系統,進一步包括:一撓性膜,該撓性膜包含安置於其中的一RFID標籤。
  13. 如請求項8所述之拋光系統,其中一凹部形成於該經列印之拋光襯墊內,並且該RFID標籤耦 合至形成於該經列印之拋光襯墊內的該凹部之一表面。
  14. 一種製造一拋光襯墊之方法,包括以下步驟:藉由分配一第一材料形成一聚合主體之複數個拋光特徵,其中該複數個拋光特徵以同心環排列並且界定一拋光表面,該拋光表面經配置以接觸一基板;藉由分配一第二材料形成該聚合主體之一或多個基底特徵,該第二材料與該第一材料不同;以及在該聚合主體內並且與該拋光表面相距一距離處安置一射頻識別(RFID)標籤,其中該一或多個基底特徵每一者與該複數個拋光特徵相距一距離安置,該一或多個基底特徵與該複數個拋光特徵沿平行於該拋光表面的一方向以一交替排列安置,及該RFID標籤儲存與該聚合主體之兩個或兩個以上性質相關聯的複數個資訊。
  15. 如請求項14所述之方法,其中該第一材料及該第二材料選自由以下各項組成之群組:環氧樹脂、酚類、胺、聚酯、胺甲酸乙酯、矽、丙烯酸酯、上述之混合物、共聚物以及接枝物。
  16. 如請求項14所述之方法,其中該RFID標 籤具有一電感天線,該電感天線經配置以使用一無線通信技術與一詢問器通信。
  17. 如請求項14所述之方法,其中該距離係在距該拋光表面約200μm與約500μm之間。
  18. 如請求項14所述之方法,進一步包括以下步驟:於該聚合主體內形成一凹部,其中該RFID標籤耦合至形成於該聚合主體內的該凹部之一表面。
  19. 如請求項18所述之方法,其中該RFID標籤包括一導電聚合物材料,該導電聚合物材料包括導電奈米顆粒。
  20. 如請求項14所述之方法,其中該複數個拋光特徵形成於該一或多個基底特徵上,該複數個拋光特徵具有一第一高度,該一或多個基底特徵具有一第二高度,其中該第一高度大於該第二高度。
TW109117279A 2015-11-06 2016-10-21 用於結合cmp製程之追蹤資料與3d列印之cmp耗材的技術 TWI749562B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/935,134 2015-11-06
US14/935,134 US10593574B2 (en) 2015-11-06 2015-11-06 Techniques for combining CMP process tracking data with 3D printed CMP consumables

Publications (2)

Publication Number Publication Date
TW202110581A TW202110581A (zh) 2021-03-16
TWI749562B true TWI749562B (zh) 2021-12-11

Family

ID=58662314

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105133977A TWI697384B (zh) 2015-11-06 2016-10-21 用於結合cmp製程之追蹤資料與3d列印之cmp耗材的技術
TW109117279A TWI749562B (zh) 2015-11-06 2016-10-21 用於結合cmp製程之追蹤資料與3d列印之cmp耗材的技術

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW105133977A TWI697384B (zh) 2015-11-06 2016-10-21 用於結合cmp製程之追蹤資料與3d列印之cmp耗材的技術

Country Status (6)

Country Link
US (2) US10593574B2 (zh)
JP (2) JP6940497B2 (zh)
KR (1) KR20180071368A (zh)
CN (2) CN116197811A (zh)
TW (2) TWI697384B (zh)
WO (1) WO2017078933A1 (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013217422A1 (de) 2013-09-02 2015-03-05 Carl Zeiss Industrielle Messtechnik Gmbh Koordinatenmessgerät und Verfahren zur Vermessung und mindestens teilweisen Erzeugung eines Werkstücks
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
JP6545261B2 (ja) 2014-10-17 2019-07-17 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 付加製造プロセスを使用する、複合材料特性を有するcmpパッド構造
CN108290267B (zh) 2015-10-30 2021-04-20 应用材料公司 形成具有期望ζ电位的抛光制品的设备与方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
CN106853610B (zh) 2015-12-08 2019-11-01 中芯国际集成电路制造(北京)有限公司 抛光垫及其监测方法和监测系统
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10930535B2 (en) 2016-12-02 2021-02-23 Applied Materials, Inc. RFID part authentication and tracking of processing components
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
JP6948878B2 (ja) 2017-08-22 2021-10-13 ラピスセミコンダクタ株式会社 半導体製造装置及び半導体基板の研磨方法
JP6985107B2 (ja) * 2017-11-06 2021-12-22 株式会社荏原製作所 研磨方法および研磨装置
JP7416694B2 (ja) 2017-12-27 2024-01-17 ソルベイ スペシャルティ ポリマーズ ユーエスエー, エルエルシー 3次元物体を製造する方法
KR20200108098A (ko) * 2018-02-05 2020-09-16 어플라이드 머티어리얼스, 인코포레이티드 3d 프린트된 cmp 패드들을 위한 압전 엔드포인팅
WO2019206903A1 (en) 2018-04-23 2019-10-31 Carl Zeiss Industrial Metrology, Llc Method and arrangement for producing a workpiece by using adaptive closed-loop control of additive manufacturing techniques
US11498269B2 (en) 2018-04-30 2022-11-15 Hewlett-Packard Development Company, L.P. Post-print processing of three dimensional (3D) printed objects
IT201800007903A1 (it) * 2018-08-06 2020-02-06 Mole Abrasivi Ermoli Srl Mola abrasiva e metodo di controllo per una molatrice comprendente detta mola
KR20210040172A (ko) 2018-08-31 2021-04-12 어플라이드 머티어리얼스, 인코포레이티드 용량성 전단 센서를 갖는 연마 시스템
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US20220023991A1 (en) * 2018-11-27 2022-01-27 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
WO2020206382A1 (en) * 2019-04-03 2020-10-08 Saint-Gobain Abrasives, Inc. Abrasive article, abrasive system and method for using and forming same
US11851570B2 (en) 2019-04-12 2023-12-26 Applied Materials, Inc. Anionic polishing pads formed by printing processes
CN111816570A (zh) * 2019-07-05 2020-10-23 北京荷清柔创科技有限公司 柔性电子器件及其制备方法、制备装置
IT201900014214A1 (it) * 2019-08-07 2021-02-07 Technoprobe Spa Metodo di fabbricazione di sonde di contatto per teste di misura di dispositivi elettronici e relativa sonda di contatto
US11522319B2 (en) * 2020-06-08 2022-12-06 Global Inventive Consulting Inc. RFID-enabled electrical connector
US11738517B2 (en) 2020-06-18 2023-08-29 Applied Materials, Inc. Multi dispense head alignment using image processing
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
US11951590B2 (en) 2021-06-14 2024-04-09 Applied Materials, Inc. Polishing pads with interconnected pores
CN117615879A (zh) * 2021-07-06 2024-02-27 应用材料公司 用于化学机械抛光的声学传感器的耦合
CN114013028A (zh) * 2021-11-03 2022-02-08 北京理工大学 一种高光溢出效果半导体纳米晶器件微结构的构筑方法
WO2024083517A1 (de) * 2022-10-17 2024-04-25 Ernst-Abbe-Hochschule Jena Graduierte und adaptive polierwerkzeuge sowie verfahren zu deren herstellung

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW365561B (en) * 1997-07-30 1999-08-01 Peripheral Products Inc Polishing semiconductor wafer
TW480205B (en) * 1999-07-20 2002-03-21 Agere Syst Guardian Corp Engineered polishing pad for improved slurry distribution
US20080004743A1 (en) * 2006-06-28 2008-01-03 3M Innovative Properties Company Abrasive Articles, CMP Monitoring System and Method
TWI388398B (zh) * 2008-10-22 2013-03-11
TWM481855U (zh) * 2013-12-18 2014-07-11 Hui-Teng Xue 具有緊放模式的abs煞車配件組
TWI462797B (zh) * 2011-11-24 2014-12-01 Univ Nat Taiwan Science Tech Electric field assisted chemical mechanical polishing system and its method
TW201527040A (zh) * 2011-05-05 2015-07-16 Nexplanar Corp 具有對準特徵之拋光墊

Family Cites Families (654)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2001911A (en) 1932-04-21 1935-05-21 Carborundum Co Abrasive articles
US3357598A (en) 1965-09-21 1967-12-12 Dole Valve Co Adjustable liquid dispenser
US3741116A (en) 1970-06-25 1973-06-26 American Screen Process Equip Vacuum belt
US4459779A (en) 1982-09-16 1984-07-17 International Business Machines Corporation Fixed abrasive grinding media
US4575330A (en) 1984-08-08 1986-03-11 Uvp, Inc. Apparatus for production of three-dimensional objects by stereolithography
US4836832A (en) 1986-08-11 1989-06-06 Minnesota Mining And Manufacturing Company Method of preparing coated abrasive having radiation curable binder
US4841680A (en) 1987-08-25 1989-06-27 Rodel, Inc. Inverted cell pad material for grinding, lapping, shaping and polishing
US4942001A (en) 1988-03-02 1990-07-17 Inc. DeSoto Method of forming a three-dimensional object by stereolithography and composition therefore
DE3808951A1 (de) 1988-03-17 1989-10-05 Basf Ag Photopolymerisierbare, zur herstellung von druckformen geeignete druckplatte
US4844144A (en) 1988-08-08 1989-07-04 Desoto, Inc. Investment casting utilizing patterns produced by stereolithography
JPH07102724B2 (ja) 1988-08-31 1995-11-08 ジューキ株式会社 印字装置
US5121329A (en) 1989-10-30 1992-06-09 Stratasys, Inc. Apparatus and method for creating three-dimensional objects
US5387380A (en) 1989-12-08 1995-02-07 Massachusetts Institute Of Technology Three-dimensional printing techniques
DE3942859A1 (de) 1989-12-23 1991-07-04 Basf Ag Verfahren zur herstellung von bauteilen
US5626919A (en) 1990-03-01 1997-05-06 E. I. Du Pont De Nemours And Company Solid imaging apparatus and method with coating station
US5096530A (en) 1990-06-28 1992-03-17 3D Systems, Inc. Resin film recoating method and apparatus
JP2929779B2 (ja) 1991-02-15 1999-08-03 トヨタ自動車株式会社 炭素被膜付撥水ガラス
DE69215439T2 (de) 1991-06-25 1997-05-22 Eastman Kodak Co Photographisches Element, enthaltend eine Spannung absorbierende, schützende Schicht
US5212910A (en) 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5193316A (en) 1991-10-29 1993-03-16 Texas Instruments Incorporated Semiconductor wafer polishing using a hydrostatic medium
US5287663A (en) 1992-01-21 1994-02-22 National Semiconductor Corporation Polishing pad and method for polishing semiconductor wafers
US5178646A (en) 1992-01-22 1993-01-12 Minnesota Mining And Manufacturing Company Coatable thermally curable binder presursor solutions modified with a reactive diluent, abrasive articles incorporating same, and methods of making said abrasive articles
US6099394A (en) 1998-02-10 2000-08-08 Rodel Holdings, Inc. Polishing system having a multi-phase polishing substrate and methods relating thereto
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6022264A (en) 1997-02-10 2000-02-08 Rodel Inc. Polishing pad and methods relating thereto
US6746225B1 (en) 1992-11-30 2004-06-08 Bechtel Bwtx Idaho, Llc Rapid solidification processing system for producing molds, dies and related tooling
AU679005B2 (en) 1992-12-17 1997-06-19 Minnesota Mining And Manufacturing Company Reduced viscosity slurries, abrasive articles made therefrom, and methods of making said articles
JPH07297195A (ja) 1994-04-27 1995-11-10 Speedfam Co Ltd 半導体装置の平坦化方法及び平坦化装置
US5906863A (en) 1994-08-08 1999-05-25 Lombardi; John Methods for the preparation of reinforced three-dimensional bodies
JPH08132342A (ja) 1994-11-08 1996-05-28 Hitachi Ltd 半導体集積回路装置の製造装置
KR100258802B1 (ko) 1995-02-15 2000-06-15 전주범 평탄화 장치 및 그를 이용한 평탄화 방법
US6719818B1 (en) 1995-03-28 2004-04-13 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US5533923A (en) 1995-04-10 1996-07-09 Applied Materials, Inc. Chemical-mechanical polishing pad providing polishing unformity
US5645471A (en) 1995-08-11 1997-07-08 Minnesota Mining And Manufacturing Company Method of texturing a substrate using an abrasive article having multiple abrasive natures
US5605760A (en) 1995-08-21 1997-02-25 Rodel, Inc. Polishing pads
JP3324643B2 (ja) 1995-10-25 2002-09-17 日本電気株式会社 研磨パッド
US5738574A (en) 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
US5905099A (en) 1995-11-06 1999-05-18 Minnesota Mining And Manufacturing Company Heat-activatable adhesive composition
US5609517A (en) 1995-11-20 1997-03-11 International Business Machines Corporation Composite polishing pad
JP3566430B2 (ja) 1995-12-20 2004-09-15 株式会社ルネサステクノロジ 半導体装置の製造方法
US5624303A (en) 1996-01-22 1997-04-29 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
US6095084A (en) 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5778481A (en) 1996-02-15 1998-07-14 International Business Machines Corporation Silicon wafer cleaning and polishing pads
US5690540A (en) 1996-02-23 1997-11-25 Micron Technology, Inc. Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers
US6090475A (en) * 1996-05-24 2000-07-18 Micron Technology Inc. Polishing pad, methods of manufacturing and use
JP3498881B2 (ja) 1996-05-27 2004-02-23 セントラル硝子株式会社 撥水性ガラスの製法
US5976000A (en) 1996-05-28 1999-11-02 Micron Technology, Inc. Polishing pad with incompressible, highly soluble particles for chemical-mechanical planarization of semiconductor wafers
US5748434A (en) 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
GB2316414B (en) 1996-07-31 2000-10-11 Tosoh Corp Abrasive shaped article, abrasive disc and polishing method
US5795218A (en) 1996-09-30 1998-08-18 Micron Technology, Inc. Polishing pad with elongated microcolumns
US6244575B1 (en) 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
KR100210840B1 (ko) 1996-12-24 1999-07-15 구본준 기계 화학적 연마 방법 및 그 장치
US5876268A (en) 1997-01-03 1999-03-02 Minnesota Mining And Manufacturing Company Method and article for the production of optical quality surfaces on glass
DE69827789T2 (de) 1997-01-13 2005-11-10 Rodel, Inc., Newark Verfahren zum herstellen von einem photolithographisch gemusterten kunststoffpolierkissen
US5965460A (en) 1997-01-29 1999-10-12 Mac Dermid, Incorporated Polyurethane composition with (meth)acrylate end groups useful in the manufacture of polishing pads
US6231629B1 (en) 1997-03-07 2001-05-15 3M Innovative Properties Company Abrasive article for providing a clear surface finish on glass
US5910471A (en) 1997-03-07 1999-06-08 Minnesota Mining And Manufacturing Company Abrasive article for providing a clear surface finish on glass
BR9808152A (pt) 1997-03-07 2000-03-28 Minnesota Mining & Mfg Artigo abrasivo, sistema para polimento de vidro, processo para o polimento de uma peça e de um artigo de vidro, e, aparelho compreendendo um tubo de raios catódicos
US5944583A (en) 1997-03-17 1999-08-31 International Business Machines Corporation Composite polish pad for CMP
US6682402B1 (en) 1997-04-04 2004-01-27 Rodel Holdings, Inc. Polishing pads and methods relating thereto
US6648733B2 (en) 1997-04-04 2003-11-18 Rodel Holdings, Inc. Polishing pads and methods relating thereto
US6062958A (en) 1997-04-04 2000-05-16 Micron Technology, Inc. Variable abrasive polishing pad for mechanical and chemical-mechanical planarization
US5940674A (en) 1997-04-09 1999-08-17 Massachusetts Institute Of Technology Three-dimensional product manufacture using masks
US6126532A (en) 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
ATE227194T1 (de) 1997-04-18 2002-11-15 Cabot Microelectronics Corp Polierkissen fur einen halbleitersubstrat
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US5945058A (en) 1997-05-13 1999-08-31 3D Systems, Inc. Method and apparatus for identifying surface features associated with selected lamina of a three-dimensional object being stereolithographically formed
US5921855A (en) 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
US6273806B1 (en) 1997-05-15 2001-08-14 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
US6692338B1 (en) 1997-07-23 2004-02-17 Lsi Logic Corporation Through-pad drainage of slurry during chemical mechanical polishing
US5919082A (en) * 1997-08-22 1999-07-06 Micron Technology, Inc. Fixed abrasive polishing pad
US6121143A (en) 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US5888121A (en) 1997-09-23 1999-03-30 Lsi Logic Corporation Controlling groove dimensions for enhanced slurry flow
US5932040A (en) 1997-10-01 1999-08-03 Bibielle S.P.A. Method for producing a ring of abrasive elements from which to form a rotary brush
US6950193B1 (en) 1997-10-28 2005-09-27 Rockwell Automation Technologies, Inc. System for monitoring substrate conditions
US6039836A (en) 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6231942B1 (en) 1998-01-21 2001-05-15 Trexel, Inc. Method and apparatus for microcellular polypropylene extrusion, and polypropylene articles produced thereby
JPH11254542A (ja) 1998-03-11 1999-09-21 Sanyo Electric Co Ltd 光造形装置のモニタリングシステム
US6228133B1 (en) 1998-05-01 2001-05-08 3M Innovative Properties Company Abrasive articles having abrasive layer bond system derived from solid, dry-coated binder precursor particles having a fusible, radiation curable component
US6106661A (en) * 1998-05-08 2000-08-22 Advanced Micro Devices, Inc. Polishing pad having a wear level indicator and system using the same
JPH11347761A (ja) 1998-06-12 1999-12-21 Mitsubishi Heavy Ind Ltd レーザによる3次元造形装置
US6122564A (en) 1998-06-30 2000-09-19 Koch; Justin Apparatus and methods for monitoring and controlling multi-layer laser cladding
US6322728B1 (en) 1998-07-10 2001-11-27 Jeneric/Pentron, Inc. Mass production of dental restorations by solid free-form fabrication methods
US6117000A (en) 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
DE19834559A1 (de) 1998-07-31 2000-02-03 Friedrich Schiller Uni Jena Bu Verfahren zur Herstellung von Werkzeugen für die Bearbeitung von Oberflächen
JP2000061817A (ja) 1998-08-24 2000-02-29 Nikon Corp 研磨パッド
US6095902A (en) 1998-09-23 2000-08-01 Rodel Holdings, Inc. Polyether-polyester polyurethane polishing pads and related methods
US6602380B1 (en) 1998-10-28 2003-08-05 Micron Technology, Inc. Method and apparatus for releasably attaching a polishing pad to a chemical-mechanical planarization machine
US6325706B1 (en) 1998-10-29 2001-12-04 Lam Research Corporation Use of zeta potential during chemical mechanical polishing for end point detection
US6176992B1 (en) 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6390890B1 (en) 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
US6206759B1 (en) 1998-11-30 2001-03-27 Micron Technology, Inc. Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines
JP3641956B2 (ja) 1998-11-30 2005-04-27 三菱住友シリコン株式会社 研磨スラリーの再生システム
US7425250B2 (en) 1998-12-01 2008-09-16 Novellus Systems, Inc. Electrochemical mechanical processing apparatus
US6354915B1 (en) 1999-01-21 2002-03-12 Rodel Holdings Inc. Polishing pads and methods relating thereto
US6994607B2 (en) 2001-12-28 2006-02-07 Applied Materials, Inc. Polishing pad with window
US6179709B1 (en) 1999-02-04 2001-01-30 Applied Materials, Inc. In-situ monitoring of linear substrate polishing operations
US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
DE60039054D1 (de) 1999-03-30 2008-07-10 Nikon Corp Gt-polierkörper, poliervorrichtung, polierverfahren und verfahren zum herstellen einer halbleitervorrichtung (2002/23)
US6217426B1 (en) 1999-04-06 2001-04-17 Applied Materials, Inc. CMP polishing pad
JP2000301450A (ja) 1999-04-19 2000-10-31 Rohm Co Ltd Cmp研磨パッドおよびそれを用いたcmp処理装置
US6213845B1 (en) 1999-04-26 2001-04-10 Micron Technology, Inc. Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same
US6338901B1 (en) 1999-05-03 2002-01-15 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6328634B1 (en) 1999-05-11 2001-12-11 Rodel Holdings Inc. Method of polishing
US6196899B1 (en) 1999-06-21 2001-03-06 Micron Technology, Inc. Polishing apparatus
JP2001018163A (ja) 1999-07-06 2001-01-23 Speedfam Co Ltd 研磨用パッド
US6319108B1 (en) 1999-07-09 2001-11-20 3M Innovative Properties Company Metal bond abrasive article comprising porous ceramic abrasive composites and method of using same to abrade a workpiece
JP2001105329A (ja) 1999-08-02 2001-04-17 Ebara Corp 研磨用砥石
US6232236B1 (en) 1999-08-03 2001-05-15 Applied Materials, Inc. Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system
US6328632B1 (en) 1999-08-31 2001-12-11 Micron Technology, Inc. Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
US6201208B1 (en) 1999-11-04 2001-03-13 Wisconsin Alumni Research Foundation Method and apparatus for plasma processing with control of ion energy distribution at the substrates
US6257973B1 (en) 1999-11-04 2001-07-10 Norton Company Coated abrasive discs
US6399501B2 (en) 1999-12-13 2002-06-04 Applied Materials, Inc. Method and apparatus for detecting polishing endpoint with optical monitoring
KR20020072548A (ko) 1999-12-14 2002-09-16 로델 홀딩스 인코포레이티드 중합체 연마 패드 또는 중합체 복합재 연마 패드의 제조방법
US6368184B1 (en) 2000-01-06 2002-04-09 Advanced Micro Devices, Inc. Apparatus for determining metal CMP endpoint using integrated polishing pad electrodes
US6241596B1 (en) 2000-01-14 2001-06-05 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing using a patterned pad
US6506097B1 (en) 2000-01-18 2003-01-14 Applied Materials, Inc. Optical monitoring in a two-step chemical mechanical polishing process
US20010041511A1 (en) 2000-01-19 2001-11-15 Lack Craig D. Printing of polishing pads
US7071041B2 (en) 2000-01-20 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6746311B1 (en) 2000-01-24 2004-06-08 3M Innovative Properties Company Polishing pad with release layer
US6309276B1 (en) 2000-02-01 2001-10-30 Applied Materials, Inc. Endpoint monitoring with polishing rate change
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
WO2001064396A1 (en) 2000-02-28 2001-09-07 Rodel Holdings, Inc. Polishing pad surface texture formed by solid phase droplets
KR100502268B1 (ko) 2000-03-01 2005-07-22 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 방법
US6797623B2 (en) 2000-03-09 2004-09-28 Sony Corporation Methods of producing and polishing semiconductor device and polishing apparatus
US20030207959A1 (en) 2000-03-13 2003-11-06 Eduardo Napadensky Compositions and methods for use in three dimensional model printing
US6569373B2 (en) 2000-03-13 2003-05-27 Object Geometries Ltd. Compositions and methods for use in three dimensional model printing
US8481241B2 (en) 2000-03-13 2013-07-09 Stratasys Ltd. Compositions and methods for use in three dimensional model printing
US7300619B2 (en) 2000-03-13 2007-11-27 Objet Geometries Ltd. Compositions and methods for use in three dimensional model printing
US6860793B2 (en) 2000-03-15 2005-03-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Window portion with an adjusted rate of wear
WO2001072502A1 (en) 2000-03-24 2001-10-04 Generis Gmbh Method for manufacturing a structural part by deposition technique
KR20010093677A (ko) 2000-03-29 2001-10-29 추후기재 향상된 슬러리 분배를 위하여 특수 설계된 연마 패드
US6313038B1 (en) 2000-04-26 2001-11-06 Micron Technology, Inc. Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
WO2001083167A1 (en) 2000-05-03 2001-11-08 Rodel Holdings, Inc. Polishing pad with a seam which is reinforced with caulking material
US6387289B1 (en) 2000-05-04 2002-05-14 Micron Technology, Inc. Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6267641B1 (en) 2000-05-19 2001-07-31 Motorola, Inc. Method of manufacturing a semiconductor component and chemical-mechanical polishing system therefor
US8485862B2 (en) 2000-05-19 2013-07-16 Applied Materials, Inc. Polishing pad for endpoint detection and related methods
US6749485B1 (en) 2000-05-27 2004-06-15 Rodel Holdings, Inc. Hydrolytically stable grooved polishing pads for chemical mechanical planarization
US6454634B1 (en) 2000-05-27 2002-09-24 Rodel Holdings Inc. Polishing pads for chemical mechanical planarization
US6736709B1 (en) 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
US6860802B1 (en) 2000-05-27 2005-03-01 Rohm And Haas Electric Materials Cmp Holdings, Inc. Polishing pads for chemical mechanical planarization
JP3925041B2 (ja) 2000-05-31 2007-06-06 Jsr株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
DE60131080T2 (de) 2000-05-31 2008-07-31 Jsr Corp. Schleifmaterial
US6478914B1 (en) 2000-06-09 2002-11-12 Micron Technology, Inc. Method for attaching web-based polishing materials together on a polishing tool
US6656019B1 (en) 2000-06-29 2003-12-02 International Business Machines Corporation Grooved polishing pads and methods of use
JP2002028849A (ja) 2000-07-17 2002-01-29 Jsr Corp 研磨パッド
US20020016139A1 (en) 2000-07-25 2002-02-07 Kazuto Hirokawa Polishing tool and manufacturing method therefor
US6520834B1 (en) 2000-08-09 2003-02-18 Micron Technology, Inc. Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates
US6776699B2 (en) 2000-08-14 2004-08-17 3M Innovative Properties Company Abrasive pad for CMP
US6736869B1 (en) 2000-08-28 2004-05-18 Micron Technology, Inc. Method for forming a planarizing pad for planarization of microelectronic substrates
US6592443B1 (en) 2000-08-30 2003-07-15 Micron Technology, Inc. Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
US6638831B1 (en) 2000-08-31 2003-10-28 Micron Technology, Inc. Use of a reference fiducial on a semiconductor package to monitor and control a singulation method
JP3886712B2 (ja) 2000-09-08 2007-02-28 シャープ株式会社 半導体装置の製造方法
US6477926B1 (en) 2000-09-15 2002-11-12 Ppg Industries Ohio, Inc. Polishing pad
US6641471B1 (en) 2000-09-19 2003-11-04 Rodel Holdings, Inc Polishing pad having an advantageous micro-texture and methods relating thereto
AU2002211387A1 (en) 2000-09-29 2002-04-08 Strasbaugh, Inc. Polishing pad with built-in optical sensor
AU3060702A (en) 2000-11-09 2002-05-21 3M Innovative Properties Co Weather resistant, ink jettable, radiation curable, fluid compositions particularly suitable for outdoor applications
JP2002151447A (ja) 2000-11-13 2002-05-24 Asahi Kasei Corp 研磨パッド
US6684704B1 (en) 2002-09-12 2004-02-03 Psiloquest, Inc. Measuring the surface properties of polishing pads using ultrasonic reflectance
CN100379522C (zh) 2000-12-01 2008-04-09 东洋橡膠工业株式会社 研磨垫及其制造方法和研磨垫用缓冲层
JP2002200555A (ja) 2000-12-28 2002-07-16 Ebara Corp 研磨工具および該研磨工具を具備したポリッシング装置
US6407669B1 (en) 2001-02-02 2002-06-18 3M Innovative Properties Company RFID tag device and method of manufacturing
GB0103754D0 (en) 2001-02-15 2001-04-04 Vantico Ltd Three-dimensional structured printing
US20020112632A1 (en) 2001-02-21 2002-08-22 Creo Ltd Method for supporting sensitive workpieces during processing
US6840843B2 (en) 2001-03-01 2005-01-11 Cabot Microelectronics Corporation Method for manufacturing a polishing pad having a compressed translucent region
US6811680B2 (en) 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7955693B2 (en) 2001-04-20 2011-06-07 Tolland Development Company, Llc Foam composition roller brush with embedded mandrel
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6811937B2 (en) 2001-06-21 2004-11-02 Dsm Desotech, Inc. Radiation-curable resin composition and rapid prototyping process using the same
US6544373B2 (en) 2001-07-26 2003-04-08 United Microelectronics Corp. Polishing pad for a chemical mechanical polishing process
US6586494B2 (en) 2001-08-08 2003-07-01 Spectra Group Limited, Inc. Radiation curable inkjet composition
KR100646702B1 (ko) 2001-08-16 2006-11-17 에스케이씨 주식회사 홀 및/또는 그루브로 형성된 화학적 기계적 연마패드
KR20030020658A (ko) 2001-09-04 2003-03-10 삼성전자주식회사 화학적물리적 연마장치의 연마패드 콘디셔닝 디스크
US6866807B2 (en) 2001-09-21 2005-03-15 Stratasys, Inc. High-precision modeling filament
TWI222390B (en) 2001-11-13 2004-10-21 Toyo Boseki Polishing pad and its production method
JP4077192B2 (ja) 2001-11-30 2008-04-16 株式会社東芝 化学機械研磨方法および半導体装置の製造方法
US6599765B1 (en) 2001-12-12 2003-07-29 Lam Research Corporation Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
US6838149B2 (en) 2001-12-13 2005-01-04 3M Innovative Properties Company Abrasive article for the deposition and polishing of a conductive material
JP2003188124A (ja) 2001-12-14 2003-07-04 Rodel Nitta Co 研磨布
EP1326273B1 (en) 2001-12-28 2012-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20030134581A1 (en) 2002-01-11 2003-07-17 Wang Hsing Maw Device for chemical mechanical polishing
KR100442873B1 (ko) 2002-02-28 2004-08-02 삼성전자주식회사 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법
CN1445060A (zh) 2002-03-07 2003-10-01 株式会社荏原制作所 抛光装置
JP2003303793A (ja) 2002-04-12 2003-10-24 Hitachi Ltd 研磨装置および半導体装置の製造方法
US6773474B2 (en) 2002-04-19 2004-08-10 3M Innovative Properties Company Coated abrasive article
JP4693024B2 (ja) 2002-04-26 2011-06-01 東洋ゴム工業株式会社 研磨材
US6815570B1 (en) 2002-05-07 2004-11-09 Uop Llc Shaped catalysts for transalkylation of aromatics for enhanced xylenes production
US20050194681A1 (en) 2002-05-07 2005-09-08 Yongqi Hu Conductive pad with high abrasion
US20050276967A1 (en) 2002-05-23 2005-12-15 Cabot Microelectronics Corporation Surface textured microporous polishing pads
US6913517B2 (en) 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
TWI250572B (en) 2002-06-03 2006-03-01 Jsr Corp Polishing pad and multi-layer polishing pad
DE10224981B4 (de) 2002-06-05 2004-08-19 Generis Gmbh Verfahren zum schichtweisen Aufbau von Modellen
JP3801100B2 (ja) 2002-06-07 2006-07-26 Jsr株式会社 光硬化造形装置、光硬化造形方法及び光硬化造形システム
CN100445091C (zh) 2002-06-07 2008-12-24 普莱克斯S.T.技术有限公司 控制渗透子垫
US8602851B2 (en) 2003-06-09 2013-12-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled penetration subpad
EP1375617A1 (en) 2002-06-19 2004-01-02 3M Innovative Properties Company Radiation-curable, solvent-free and printable precursor of a pressure-sensitive adhesive
US7169014B2 (en) 2002-07-18 2007-01-30 Micron Technology, Inc. Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces
KR101016081B1 (ko) 2002-07-26 2011-02-17 닛토덴코 가부시키가이샤 점착 시트와 그의 제조방법, 상기 점착 시트의 사용방법,및 상기 점착 시트에 사용되는 다층 시트와 그의 제조방법
TWI228768B (en) 2002-08-08 2005-03-01 Jsr Corp Processing method of polishing pad for semiconductor wafer and polishing pad for semiconductor wafer
US7579071B2 (en) 2002-09-17 2009-08-25 Korea Polyol Co., Ltd. Polishing pad containing embedded liquid microelements and method of manufacturing the same
KR100465649B1 (ko) 2002-09-17 2005-01-13 한국포리올 주식회사 일체형 연마 패드 및 그 제조 방법
US6896765B2 (en) 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
US20040058623A1 (en) 2002-09-20 2004-03-25 Lam Research Corporation Polishing media for chemical mechanical planarization (CMP)
US7311862B2 (en) 2002-10-28 2007-12-25 Cabot Microelectronics Corporation Method for manufacturing microporous CMP materials having controlled pore size
US7435165B2 (en) 2002-10-28 2008-10-14 Cabot Microelectronics Corporation Transparent microporous materials for CMP
US7267607B2 (en) 2002-10-28 2007-09-11 Cabot Microelectronics Corporation Transparent microporous materials for CMP
AU2003278047A1 (en) 2002-10-31 2004-05-25 Stephen F. Corbin System and method for closed-loop control of laser cladding by powder injection
JP2004153193A (ja) 2002-11-01 2004-05-27 Disco Abrasive Syst Ltd 半導体ウエーハの処理方法
DE10253445A1 (de) 2002-11-16 2004-06-03 Adam Opel Ag Verfahren und Vorrichtung zum Abdichten und Aufpumpen von Reifen bei Pannen sowie Dichtmittelbehälter als auch Adapter hierfür
WO2004049417A1 (ja) 2002-11-27 2004-06-10 Toyo Tire & Rubber Co., Ltd. 研磨パッド及び半導体デバイスの製造方法
JP2004235446A (ja) 2003-01-30 2004-08-19 Toyobo Co Ltd 研磨パッド
JP4659338B2 (ja) 2003-02-12 2011-03-30 Hoya株式会社 情報記録媒体用ガラス基板の製造方法並びにそれに使用する研磨パッド
WO2004077511A2 (en) 2003-02-24 2004-09-10 The Regents Of The University Of Colorado (meth)acrylic and (meth)acrylamide monomers, polymerizable compositions, and polymers obtained
US7104773B2 (en) 2003-03-07 2006-09-12 Ricoh Printing Systems, Ltd. Three-dimensional laminating molding device
DE10310385B4 (de) 2003-03-07 2006-09-21 Daimlerchrysler Ag Verfahren zur Herstellung von dreidimensionalen Körpern mittels pulverbasierter schichtaufbauender Verfahren
JP2004281685A (ja) 2003-03-14 2004-10-07 Mitsubishi Electric Corp 半導体基板の研磨用パッドおよび半導体基板の研磨方法
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US20060189269A1 (en) 2005-02-18 2006-08-24 Roy Pradip K Customized polishing pads for CMP and methods of fabrication and use thereof
US7377840B2 (en) 2004-07-21 2008-05-27 Neopad Technologies Corporation Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs
US8864859B2 (en) 2003-03-25 2014-10-21 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US9278424B2 (en) 2003-03-25 2016-03-08 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
CA2519942A1 (en) 2003-03-25 2004-10-14 Neopad Technologies Corporation Chip customized polish pads for chemical mechanical planarization (cmp)
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
JP2004343099A (ja) 2003-04-25 2004-12-02 Jsr Corp 研磨パッドおよび化学機械研磨方法
US6783436B1 (en) 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
US20070269987A1 (en) 2003-05-09 2007-11-22 Sanyo Chemical Industries, Ltd. Polishing Liquid for Cmp Process and Polishing Method
ATE530331T1 (de) 2003-05-21 2011-11-15 Z Corp Thermoplastisches pulvermaterialsystem für appearance models von 3d-drucksystemen
IL156094A0 (en) 2003-05-25 2003-12-23 J G Systems Inc Fixed abrasive cmp pad with built-in additives
US7435161B2 (en) 2003-06-17 2008-10-14 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US6998166B2 (en) 2003-06-17 2006-02-14 Cabot Microelectronics Corporation Polishing pad with oriented pore structure
JP4130614B2 (ja) 2003-06-18 2008-08-06 株式会社東芝 半導体装置の製造方法
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US20050032464A1 (en) 2003-08-07 2005-02-10 Swisher Robert G. Polishing pad having edge surface treatment
WO2005016599A1 (en) 2003-08-08 2005-02-24 Mykrolys Corporation Methods and materials for making a monolithic porous pad cast onto a rotatable base
US7120512B2 (en) 2003-08-25 2006-10-10 Hewlett-Packard Development Company, L.P. Method and a system for solid freeform fabricating using non-reactive powder
EP1661690A4 (en) 2003-08-27 2009-08-12 Fujifilm Corp METHOD FOR PRODUCING A THREE-DIMENSIONAL MODEL
KR100590202B1 (ko) 2003-08-29 2006-06-15 삼성전자주식회사 연마 패드 및 그 형성방법
JP2005074614A (ja) 2003-09-03 2005-03-24 Nitta Haas Inc 研磨パッドの製造方法および研磨パッド
JP2005085917A (ja) 2003-09-08 2005-03-31 Sharp Corp プラズマプロセス装置
JP2005093785A (ja) 2003-09-18 2005-04-07 Toshiba Corp Cmp用スラリー、研磨方法、および半導体装置の製造方法
KR100640998B1 (ko) 2003-09-19 2006-11-02 엘지.필립스 엘시디 주식회사 액정표시장치용 브라켓 구조
GB0323462D0 (en) 2003-10-07 2003-11-05 Fujifilm Electronic Imaging Providing a surface layer or structure on a substrate
US6855588B1 (en) 2003-10-07 2005-02-15 United Microelectronics Corp. Method of fabricating a double gate MOSFET device
US20050109371A1 (en) 2003-10-27 2005-05-26 Applied Materials, Inc. Post CMP scrubbing of substrates
JP2005131732A (ja) 2003-10-30 2005-05-26 Ebara Corp 研磨装置
WO2005043132A1 (en) 2003-10-31 2005-05-12 Applied Materials, Inc. Polishing endpoint detection system and method using friction sensor
US7264641B2 (en) 2003-11-10 2007-09-04 Cabot Microelectronics Corporation Polishing pad comprising biodegradable polymer
US20050101228A1 (en) 2003-11-10 2005-05-12 Cabot Microelectronics Corporation Polishing pad comprising biodegradable polymer
JP2005150235A (ja) 2003-11-12 2005-06-09 Three M Innovative Properties Co 半導体表面保護シート及び方法
US7125318B2 (en) 2003-11-13 2006-10-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad having a groove arrangement for reducing slurry consumption
JP4555559B2 (ja) 2003-11-25 2010-10-06 富士紡ホールディングス株式会社 研磨布及び研磨布の製造方法
US6984163B2 (en) 2003-11-25 2006-01-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with high optical transmission window
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US6843711B1 (en) 2003-12-11 2005-01-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing pad having a process-dependent groove configuration
US20050153634A1 (en) 2004-01-09 2005-07-14 Cabot Microelectronics Corporation Negative poisson's ratio material-containing CMP polishing pad
US20050171224A1 (en) 2004-02-03 2005-08-04 Kulp Mary J. Polyurethane polishing pad
US7132033B2 (en) 2004-02-27 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming a layered polishing pad
TWI450911B (zh) 2004-03-11 2014-09-01 Toyo Tire & Rubber Co Production method of polishing pad and semiconductor device (1)
US20050208234A1 (en) 2004-03-19 2005-09-22 Agfa-Gevaert Ink-jet recording material
US7195544B2 (en) 2004-03-23 2007-03-27 Cabot Microelectronics Corporation CMP porous pad with component-filled pores
US7204742B2 (en) 2004-03-25 2007-04-17 Cabot Microelectronics Corporation Polishing pad comprising hydrophobic region and endpoint detection port
US6955588B1 (en) 2004-03-31 2005-10-18 Lam Research Corporation Method of and platen for controlling removal rate characteristics in chemical mechanical planarization
JP2005294661A (ja) 2004-04-02 2005-10-20 Hitachi Chem Co Ltd 研磨パッド及びそれを用いる研磨方法
JP2004243518A (ja) 2004-04-08 2004-09-02 Toshiba Corp 研摩装置
US20050227590A1 (en) 2004-04-09 2005-10-13 Chien-Min Sung Fixed abrasive tools and associated methods
TWI293266B (en) 2004-05-05 2008-02-11 Iv Technologies Co Ltd A single-layer polishing pad and a method of producing the same
EP1763703A4 (en) 2004-05-12 2010-12-08 Massachusetts Inst Technology MANUFACTURING METHOD, SUCH AS A THREE DIMENSIONAL PRINTING, INCLUDING FORMATION OF FILMS USING SOLVENT VAPOR AND THE LIKE
US20050260939A1 (en) 2004-05-18 2005-11-24 Saint-Gobain Abrasives, Inc. Brazed diamond dressing tool
US7926521B2 (en) 2004-05-20 2011-04-19 Bridgestone Corporation Sealing agent injecting apparatus, sealing agent injecting method and sealing pump up apparatus
US20050261150A1 (en) 2004-05-21 2005-11-24 Battelle Memorial Institute, A Part Interest Reactive fluid systems for removing deposition materials and methods for using same
US7438795B2 (en) 2004-06-10 2008-10-21 Cabot Microelectronics Corp. Electrochemical-mechanical polishing system
US7582127B2 (en) 2004-06-16 2009-09-01 Cabot Microelectronics Corporation Polishing composition for a tungsten-containing substrate
US7252871B2 (en) 2004-06-16 2007-08-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad having a pressure relief channel
EP1758711B1 (en) 2004-06-21 2013-08-07 Ebara Corporation Polishing apparatus and polishing method
JP4133945B2 (ja) 2004-06-28 2008-08-13 住友ゴム工業株式会社 タイヤのパンクシーリング剤送給、抜取り装置
WO2006003697A1 (ja) 2004-06-30 2006-01-12 Toho Engineering Kabushiki Kaisha 研磨パッドおよびその製造方法
US20060014475A1 (en) 2004-07-15 2006-01-19 Disco Corporation Grindstone tool
US7709053B2 (en) 2004-07-29 2010-05-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing of polymer-coated particles for chemical mechanical polishing
US7625198B2 (en) 2004-08-11 2009-12-01 Cornell Research Foundation, Inc. Modular fabrication systems and methods
US7153191B2 (en) 2004-08-20 2006-12-26 Micron Technology, Inc. Polishing liquids for activating and/or conditioning fixed abrasive polishing pads, and associated systems and methods
US8075372B2 (en) 2004-09-01 2011-12-13 Cabot Microelectronics Corporation Polishing pad with microporous regions
DE102004042911A1 (de) 2004-09-02 2006-03-09 Michael Stehle Vorrichtung zum Ausbringen von Luft- und/oder Reifendichtmittel
US20060079159A1 (en) 2004-10-08 2006-04-13 Markus Naujok Chemical mechanical polish with multi-zone abrasive-containing matrix
US20060089094A1 (en) 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060096179A1 (en) 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
US7530880B2 (en) 2004-11-29 2009-05-12 Semiquest Inc. Method and apparatus for improved chemical mechanical planarization pad with pressure control and process monitor
US7846008B2 (en) 2004-11-29 2010-12-07 Semiquest Inc. Method and apparatus for improved chemical mechanical planarization and CMP pad
US8075745B2 (en) 2004-11-29 2011-12-13 Semiquest Inc. Electro-method and apparatus for improved chemical mechanical planarization pad with uniform polish performance
US7815778B2 (en) 2005-11-23 2010-10-19 Semiquest Inc. Electro-chemical mechanical planarization pad with uniform polish performance
CN102554766B (zh) 2004-12-10 2014-11-05 东洋橡胶工业株式会社 研磨垫及研磨垫的制造方法
US7059950B1 (en) 2004-12-14 2006-06-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP polishing pad having grooves arranged to improve polishing medium utilization
US7059949B1 (en) 2004-12-14 2006-06-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having an overlapping stepped groove arrangement
US7182677B2 (en) 2005-01-14 2007-02-27 Applied Materials, Inc. Chemical mechanical polishing pad for controlling polishing slurry distribution
TWI385050B (zh) 2005-02-18 2013-02-11 Nexplanar Corp 用於cmp之特製拋光墊及其製造方法及其用途
US7875091B2 (en) 2005-02-22 2011-01-25 Saint-Gobain Abrasives, Inc. Rapid tooling system and methods for manufacturing abrasive articles
US7524345B2 (en) 2005-02-22 2009-04-28 Saint-Gobain Abrasives, Inc. Rapid tooling system and methods for manufacturing abrasive articles
JP2006231464A (ja) 2005-02-24 2006-09-07 Nitta Haas Inc 研磨パッド
US7829000B2 (en) 2005-02-25 2010-11-09 Hewlett-Packard Development Company, L.P. Core-shell solid freeform fabrication
TWI410314B (zh) 2005-04-06 2013-10-01 羅門哈斯電子材料Cmp控股公司 藉由反應-射出成形製造多孔化學機械研磨墊之裝置
EP1710324B1 (en) 2005-04-08 2008-12-03 STMicroelectronics S.r.l. PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US7435364B2 (en) 2005-04-11 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for forming a porous polishing pad
JP2006305650A (ja) 2005-04-26 2006-11-09 Inoac Corp 研磨用吸着パッド及びその製造方法
US8393934B2 (en) 2006-11-16 2013-03-12 Chien-Min Sung CMP pad dressers with hybridized abrasive surface and related methods
US8398466B2 (en) 2006-11-16 2013-03-19 Chien-Min Sung CMP pad conditioners with mosaic abrasive segments and associated methods
US8304467B2 (en) 2005-05-17 2012-11-06 Toyo Tire & Rubber Co., Ltd. Polishing pad
KR100721196B1 (ko) 2005-05-24 2007-05-23 주식회사 하이닉스반도체 연마패드 및 이를 이용한 화학적기계적연마장치
JP2007005612A (ja) 2005-06-24 2007-01-11 Hitachi Chem Co Ltd 研磨パッド及びその製造方法及び基板の研磨方法
CN1897226A (zh) 2005-07-11 2007-01-17 上海华虹Nec电子有限公司 一种化学机械抛光机
JP4512529B2 (ja) 2005-07-15 2010-07-28 住友精密工業株式会社 エッチング方法及びエッチング装置
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
KR100727485B1 (ko) 2005-08-09 2007-06-13 삼성전자주식회사 연마 패드 및 이를 제조하는 방법, 그리고 화학적 기계적 연마 장치 및 방법
US20070117393A1 (en) 2005-11-21 2007-05-24 Alexander Tregub Hardened porous polymer chemical mechanical polishing (CMP) pad
JP4868840B2 (ja) 2005-11-30 2012-02-01 Jsr株式会社 半導体装置の製造方法
CN1851896A (zh) 2005-12-05 2006-10-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种静电卡盘
US20070128991A1 (en) 2005-12-07 2007-06-07 Yoon Il-Young Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same
US7357703B2 (en) 2005-12-28 2008-04-15 Jsr Corporation Chemical mechanical polishing pad and chemical mechanical polishing method
US20070149094A1 (en) 2005-12-28 2007-06-28 Choi Jae Y Monitoring Device of Chemical Mechanical Polishing Apparatus
CN101375374A (zh) 2006-01-25 2009-02-25 Jsr株式会社 化学机械研磨垫及其制造方法
US7935276B2 (en) 2006-02-09 2011-05-03 Headwaters Technology Innovation Llc Polymeric materials incorporating carbon nanostructures
CA2642867A1 (en) 2006-02-23 2007-08-30 Picodeon Ltd Oy Coating on a fiber substrate and a coated fiber product
JP2007235001A (ja) 2006-03-03 2007-09-13 Mitsui Chemicals Inc 研磨用スラリー
US20070204420A1 (en) 2006-03-06 2007-09-06 Hornby David M Polishing pad and method of making
US7517488B2 (en) 2006-03-08 2009-04-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming a chemical mechanical polishing pad utilizing laser sintering
WO2007104063A1 (en) 2006-03-09 2007-09-13 Rimpad Tech Ltd. Composite polishing pad
US8691116B2 (en) * 2006-03-24 2014-04-08 Clemson University Conducting polymer ink
US20070235133A1 (en) 2006-03-29 2007-10-11 Strasbaugh Devices and methods for measuring wafer characteristics during semiconductor wafer polishing
US20070235904A1 (en) 2006-04-06 2007-10-11 Saikin Alan H Method of forming a chemical mechanical polishing pad utilizing laser sintering
FR2900411B1 (fr) 2006-04-27 2008-08-29 Coatex Sas Procede de traitement de matieres minerales par des polymeres amphoteres,matieres minerales obtenues,leur utilisation comme agent reducteur de la quantite de colloides dans la fabrication de papier.
US7169030B1 (en) 2006-05-25 2007-01-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US7445847B2 (en) 2006-05-25 2008-11-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
DE602007006307D1 (de) 2006-06-20 2010-06-17 Univ Leuven Kath Verfahren und vorrichtung zur in-situ-überwachung und rückkopplungssteuerung selektiver laserpulverbearbeitung
US20080220702A1 (en) 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
JP5186738B2 (ja) 2006-07-10 2013-04-24 富士通セミコンダクター株式会社 研磨パッドの製造方法及び被研磨体の研磨方法
TWI409136B (zh) 2006-07-19 2013-09-21 Innopad Inc 表面具微溝槽之化學機械平坦化墊
KR100804275B1 (ko) 2006-07-24 2008-02-18 에스케이씨 주식회사 고분자 쉘로 둘러싸인 액상 유기물 코어를 포함하는 cmp연마패드 및 그 제조방법
US7300340B1 (en) 2006-08-30 2007-11-27 Rohm and Haas Electronics Materials CMP Holdings, Inc. CMP pad having overlaid constant area spiral grooves
US7267610B1 (en) 2006-08-30 2007-09-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having unevenly spaced grooves
MY150905A (en) 2006-09-06 2014-03-14 Nitta Haas Inc Polishing pad
JP2008084504A (ja) 2006-09-29 2008-04-10 Hitachi Ltd 光ディスク装置および光ディスクの再生方法
US7382959B1 (en) 2006-10-13 2008-06-03 Hrl Laboratories, Llc Optically oriented three-dimensional polymer microstructures
US7234224B1 (en) 2006-11-03 2007-06-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Curved grooving of polishing pads
US7648645B2 (en) 2006-11-08 2010-01-19 3M Innovative Properties Company Pre-polymer formulations for liquid crystal displays
US7371160B1 (en) 2006-12-21 2008-05-13 Rohm And Haas Electronic Materials Cmp Holdings Inc. Elastomer-modified chemical mechanical polishing pad
US7438636B2 (en) 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
EP2097247B1 (en) 2006-12-21 2016-03-09 Agfa Graphics NV 3d-inkjet printing methods
US8083820B2 (en) 2006-12-22 2011-12-27 3M Innovative Properties Company Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same
US7497885B2 (en) 2006-12-22 2009-03-03 3M Innovative Properties Company Abrasive articles with nanoparticulate fillers and method for making and using them
US7311590B1 (en) 2007-01-31 2007-12-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to retain slurry on the pad texture
US7520798B2 (en) 2007-01-31 2009-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with grooves to reduce slurry consumption
TWI432285B (zh) 2007-02-01 2014-04-01 Kuraray Co 研磨墊及研磨墊之製法
EP2122691A4 (en) 2007-02-16 2011-02-16 Nanogram Corp SOLAR CELL STRUCTURES, PV MODULES AND CORRESPONDING METHODS
CN101678527B (zh) 2007-03-20 2011-08-03 可乐丽股份有限公司 用于抛光垫的衬垫和使用该衬垫的抛光垫
JP4798713B2 (ja) 2007-03-26 2011-10-19 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 研磨パッドの製造方法
JP4954762B2 (ja) 2007-03-27 2012-06-20 東洋ゴム工業株式会社 ポリウレタン発泡体の製造方法
US9536711B2 (en) 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
WO2008120183A1 (en) 2007-04-01 2008-10-09 Objet Geometries Ltd. Method and system for three-dimensional fabrication
US20090011679A1 (en) 2007-04-06 2009-01-08 Rajeev Bajaj Method of removal profile modulation in cmp pads
FR2915016B1 (fr) 2007-04-10 2009-06-05 Siemens Vdo Automotive Sas Systeme de creation automatisee d'une interface logicielle
US8067814B2 (en) 2007-06-01 2011-11-29 Panasonic Corporation Semiconductor device and method of manufacturing the same
US8562389B2 (en) 2007-06-08 2013-10-22 Applied Materials, Inc. Thin polishing pad with window and molding process
US7455571B1 (en) 2007-06-20 2008-11-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Window polishing pad
US20080314878A1 (en) 2007-06-22 2008-12-25 General Electric Company Apparatus and method for controlling a machining system
US7758764B2 (en) 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US8563619B2 (en) 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
US7862320B2 (en) 2007-07-17 2011-01-04 Seiko Epson Corporation Three-dimensional object forming apparatus and method for forming three dimensional object
US8047899B2 (en) 2007-07-26 2011-11-01 Macronix International Co., Ltd. Pad and method for chemical mechanical polishing
US7635290B2 (en) 2007-08-15 2009-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Interpenetrating network for chemical mechanical polishing
US7828634B2 (en) 2007-08-16 2010-11-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Interconnected-multi-element-lattice polishing pad
US7517277B2 (en) 2007-08-16 2009-04-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Layered-filament lattice for chemical mechanical polishing
CN101376234B (zh) 2007-08-28 2013-05-29 侯家祥 一种研磨工具磨料颗粒有序排列的方法
US8066555B2 (en) 2007-09-03 2011-11-29 Semiquest Inc. Polishing pad
KR101232442B1 (ko) 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
EP2042649B1 (en) 2007-09-27 2012-05-30 Toyoda Gosei Co., Ltd. Coated base fabric for airbags
JP5078527B2 (ja) 2007-09-28 2012-11-21 富士紡ホールディングス株式会社 研磨布
FR2921667B1 (fr) 2007-10-01 2012-11-09 Saint Gobain Abrasives Inc Composition resinique liquide pour articles abrasifs
JP5143528B2 (ja) 2007-10-25 2013-02-13 株式会社クラレ 研磨パッド
US8491360B2 (en) 2007-10-26 2013-07-23 Innopad, Inc. Three-dimensional network in CMP pad
WO2009058275A1 (en) 2007-10-29 2009-05-07 Ekc Technology, Inc. Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions
US8388410B2 (en) * 2007-11-05 2013-03-05 P.R. Hoffman Machine Products, Inc. RFID-containing carriers used for silicon wafer quality
JP2009129970A (ja) 2007-11-20 2009-06-11 Ebara Corp 研磨装置及び研磨方法
DE102007056984A1 (de) 2007-11-27 2009-05-28 Eos Gmbh Electro Optical Systems Verfahren zum Herstellen eines dreidimensionalen Objekts mittels Lasersintern
US8377623B2 (en) 2007-11-27 2013-02-19 3D Systems, Inc. Photocurable resin composition for producing three dimensional articles having high clarity
KR101570732B1 (ko) 2007-12-31 2015-11-20 에프엔에스테크 주식회사 화학-기계적 평탄화 패드
US8444458B2 (en) 2007-12-31 2013-05-21 3M Innovative Properties Company Plasma treated abrasive article and method of making same
JP5248152B2 (ja) 2008-03-12 2013-07-31 東洋ゴム工業株式会社 研磨パッド
US9180570B2 (en) 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
WO2009119317A1 (ja) 2008-03-25 2009-10-01 住友ゴム工業株式会社 タイヤのパンク修理装置
JP5226359B2 (ja) 2008-04-02 2013-07-03 株式会社クラレ 研磨パッド用クッションおよびそれを用いた研磨パッド
US8292592B2 (en) 2008-04-02 2012-10-23 United Technologies Corporation Nosecone bolt access and aerodynamic leakage baffle
WO2009126171A1 (en) 2008-04-11 2009-10-15 Innopad, Inc. Chemical mechanical planarization pad with void network
WO2009134775A1 (en) 2008-04-29 2009-11-05 Semiquest, Inc. Polishing pad composition and method of manufacture and use
US9636870B2 (en) 2008-05-26 2017-05-02 Sony Corporation Modeling apparatus and modeling method
TW201005825A (en) 2008-05-30 2010-02-01 Panasonic Corp Plasma processing apparatus and method
US20090308739A1 (en) 2008-06-17 2009-12-17 Applied Materials, Inc. Wafer processing deposition shielding components
TWM347669U (en) 2008-06-19 2008-12-21 Bestac Advanced Material Co Ltd Polishing pad and polishing device
CN101612722A (zh) 2008-06-25 2009-12-30 三芳化学工业股份有限公司 抛光垫及其制造方法
JP5596030B2 (ja) 2008-06-26 2014-09-24 スリーエム イノベイティブ プロパティズ カンパニー 多孔質エレメントを有する研磨パッド及びその製造方法と使用方法
US8282866B2 (en) 2008-06-30 2012-10-09 Seiko Epson Corporation Method and device for forming three-dimensional model, sheet material processing method, and sheet material processing device
US20100011672A1 (en) 2008-07-16 2010-01-21 Kincaid Don H Coated abrasive article and method of making and using the same
KR20110033277A (ko) * 2008-07-18 2011-03-30 쓰리엠 이노베이티브 프로퍼티즈 캄파니 플로팅 요소를 구비한 연마 패드 및 이 연마 패드의 제작 방법과 이용 방법
US20100018648A1 (en) 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US20140069584A1 (en) 2008-07-23 2014-03-13 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode
US20140034239A1 (en) 2008-07-23 2014-02-06 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
CN101642898B (zh) 2008-08-06 2011-09-14 财团法人工业技术研究院 抛光垫及其形成方法以及抛光方法
EP2316614B1 (en) 2008-08-08 2019-07-17 Kuraray Co., Ltd. Polishing pad and method for manufacturing the polishing pad
KR20100028294A (ko) 2008-09-04 2010-03-12 주식회사 코오롱 연마패드 및 그의 제조방법
TW201038690A (en) 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
US8118641B2 (en) 2009-03-04 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having window with integral identification feature
US20100112919A1 (en) 2008-11-03 2010-05-06 Applied Materials, Inc. Monolithic linear polishing sheet
US9016585B2 (en) * 2008-11-25 2015-04-28 Thin Film Electronics Asa Printed antennas, methods of printing an antenna, and devices including the printed antenna
US8292692B2 (en) 2008-11-26 2012-10-23 Semiquest, Inc. Polishing pad with endpoint window and systems and method using the same
DE102008060046A1 (de) 2008-12-02 2010-06-10 Eos Gmbh Electro Optical Systems Verfahren zum Bereitstellen einer identifizierbaren Pulvermenge und Verfahren zur Herstellung eines Objekts
US20100140850A1 (en) 2008-12-04 2010-06-10 Objet Geometries Ltd. Compositions for 3D printing
DE102008061311A1 (de) 2008-12-11 2010-06-24 Doukas Ag Vorrichtung zum Fördern eines Gases
CN101428404A (zh) 2008-12-22 2009-05-13 南京航空航天大学 固结磨料研磨抛光垫及其制备方法
US8057282B2 (en) 2008-12-23 2011-11-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate polishing method
US8062103B2 (en) 2008-12-23 2011-11-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate groove pattern
US8435099B2 (en) 2009-01-27 2013-05-07 Innopad, Inc. Chemical-mechanical planarization pad including patterned structural domains
US8053487B2 (en) 2009-01-30 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Multifunctional acrylates used as cross-linkers in dental and biomedical self-etching bonding adhesives
US9951054B2 (en) 2009-04-23 2018-04-24 Cabot Microelectronics Corporation CMP porous pad with particles in a polymeric matrix
CN201483382U (zh) 2009-05-14 2010-05-26 贝达先进材料股份有限公司 研磨垫以及研磨装置
CN102448669B (zh) 2009-05-27 2014-12-10 罗杰斯公司 抛光垫、其聚氨酯层及抛光硅晶片的方法
JP5357639B2 (ja) 2009-06-24 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN102159609B (zh) 2009-06-29 2013-11-13 Dic株式会社 研磨垫用双组分型尿烷树脂组合物、聚氨酯研磨垫、和聚氨酯研磨垫的制造方法
WO2011008918A2 (en) 2009-07-16 2011-01-20 Cabot Microelectronics Corporation Grooved cmp polishing pad
TWI535527B (zh) 2009-07-20 2016-06-01 智勝科技股份有限公司 研磨方法、研磨墊與研磨系統
US8676537B2 (en) 2009-08-07 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Portable wireless sensor
US8712571B2 (en) 2009-08-07 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for wireless transmission of diagnostic information
US8889232B2 (en) 2009-08-20 2014-11-18 Electronics For Imaging, Inc. Radiation curable ink compositions
TWI410299B (zh) 2009-08-24 2013-10-01 Bestac Advanced Material Co Ltd 研磨墊與其應用及其製造方法
US8697576B2 (en) 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
EP2477768B1 (en) 2009-09-17 2019-04-17 Sciaky Inc. Electron beam layer manufacturing
JP5960054B2 (ja) 2009-10-16 2016-08-02 ポスコ 放射線硬化性樹脂組成物
US8598523B2 (en) 2009-11-13 2013-12-03 Sciaky, Inc. Electron beam layer manufacturing using scanning electron monitored closed loop control
JP5496630B2 (ja) 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
JP5728026B2 (ja) 2009-12-22 2015-06-03 スリーエム イノベイティブ プロパティズ カンパニー 研磨パッド及びこれの製造方法
WO2011081109A1 (ja) 2009-12-28 2011-07-07 日立化成工業株式会社 Cmp用研磨液及びこれを用いた研磨方法
SG181678A1 (en) 2009-12-30 2012-07-30 3M Innovative Properties Co Polishing pads including phase-separated polymer blend and method of making and using the same
KR20120112662A (ko) 2009-12-30 2012-10-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 유기 미립자 로딩된 폴리싱 패드 및 이를 제조 및 사용하는 방법
US9017140B2 (en) 2010-01-13 2015-04-28 Nexplanar Corporation CMP pad with local area transparency
CN102133734B (zh) 2010-01-21 2015-02-04 智胜科技股份有限公司 具有侦测窗的研磨垫及其制造方法
US9089943B2 (en) 2010-01-29 2015-07-28 Ronald Lipson Composite pads for buffing and polishing painted vehicle body surfaces and other applications
DE102010007401A1 (de) 2010-02-03 2011-08-04 Kärcher Futuretech GmbH, 71364 Vorrichtung und Verfahren zum automatisierten Formen und Abfüllen von Behältern
WO2011103538A2 (en) 2010-02-22 2011-08-25 Entegris,Inc. Post-cmp cleaning brush
KR20110100080A (ko) 2010-03-03 2011-09-09 삼성전자주식회사 화학적 기계적 연마 공정용 연마 패드 및 이를 포함하는 화학적 기계적 연마 설비
DE102010011059A1 (de) 2010-03-11 2011-09-15 Global Beam Technologies Ag Verfahren und Vorrichtung zur Herstellung eines Bauteils
JP5551479B2 (ja) * 2010-03-19 2014-07-16 ニッタ・ハース株式会社 研磨装置、研磨パッドおよび研磨情報管理システム
JP5620141B2 (ja) 2010-04-15 2014-11-05 東洋ゴム工業株式会社 研磨パッド
JP5697889B2 (ja) 2010-04-19 2015-04-08 帝人コードレ株式会社 平滑加工用シート
SG185523A1 (en) 2010-05-11 2012-12-28 3M Innovative Properties Co Fixed abrasive pad with surfactant for chemical mechanical planarization
US20120000887A1 (en) 2010-06-30 2012-01-05 Kabushiki Kaisha Toshiba Plasma treatment apparatus and plasma treatment method
RU2555269C2 (ru) 2010-07-02 2015-07-10 Зм Инновейтив Пропертиз Компани Покрытые абразивные изделия
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
JP5635957B2 (ja) 2010-09-09 2014-12-03 日本碍子株式会社 被研磨物の研磨方法、及び研磨パッド
US20130172509A1 (en) 2010-09-22 2013-07-04 Interfacial Solutions Ip, Llc Methods of Producing Microfabricated Particles for Composite Materials
US8257545B2 (en) 2010-09-29 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with light stable polymeric endpoint detection window and method of polishing therewith
US8702479B2 (en) 2010-10-15 2014-04-22 Nexplanar Corporation Polishing pad with multi-modal distribution of pore diameters
US9211628B2 (en) 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
AU2012211038B2 (en) 2011-01-26 2017-02-23 Zydex Pty Ltd A device for making an object
JP5893479B2 (ja) 2011-04-21 2016-03-23 東洋ゴム工業株式会社 積層研磨パッド
JP2014517857A (ja) 2011-04-27 2014-07-24 ヘンケル・ユーエス・アイピー・リミテッド・ライアビリティ・カンパニー 低温シーリング機能を備える硬化性エラストマー組成物
US20120302148A1 (en) 2011-05-23 2012-11-29 Rajeev Bajaj Polishing pad with homogeneous body having discrete protrusions thereon
JP5851124B2 (ja) 2011-06-13 2016-02-03 スリーエム イノベイティブ プロパティズ カンパニー 研磨用構造体
ES2441170T3 (es) 2011-06-21 2014-02-03 Agfa Graphics N.V. Líquido eyectable curable para fabricar una matriz de impresión flexográfica
JP2013018056A (ja) 2011-07-07 2013-01-31 Toray Ind Inc 研磨パッド
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US9108291B2 (en) 2011-09-22 2015-08-18 Dow Global Technologies Llc Method of forming structured-open-network polishing pads
US8894799B2 (en) 2011-09-22 2014-11-25 Dow Global Technologies Llc Method of forming layered-open-network polishing pads
US8801949B2 (en) 2011-09-22 2014-08-12 Dow Global Technologies Llc Method of forming open-network polishing pads
US20140230170A1 (en) 2011-09-26 2014-08-21 Entegris, Inc. Post-cmp cleaning apparatus and method
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US9067298B2 (en) 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with grooved foundation layer and polishing surface layer
US9067297B2 (en) 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with foundation layer and polishing surface layer
US9152006B2 (en) 2011-11-30 2015-10-06 Merck Patent Gmbh Particles for electrophoretic displays
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
KR20130084932A (ko) 2012-01-18 2013-07-26 삼성전자주식회사 반도체 소자의 제조 방법
US8486798B1 (en) 2012-02-05 2013-07-16 Tokyo Electron Limited Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof
US8721833B2 (en) 2012-02-05 2014-05-13 Tokyo Electron Limited Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof
KR20130095430A (ko) 2012-02-20 2013-08-28 케이피엑스케미칼 주식회사 연마패드 및 그 제조방법
WO2013128452A1 (en) 2012-03-01 2013-09-06 Stratasys Ltd. Cationic polymerizable compositions and methods of use thereof
DE102012203639A1 (de) 2012-03-08 2013-09-12 Evonik Industries Ag Additiv zur Einstellung der Glasübergangstemperatur von viskoelastischen Polyurethanweichschaumstoffen
US8709114B2 (en) 2012-03-22 2014-04-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing chemical mechanical polishing layers
US8986585B2 (en) 2012-03-22 2015-03-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing chemical mechanical polishing layers having a window
DE102012007791A1 (de) 2012-04-20 2013-10-24 Universität Duisburg-Essen Verfahren und Vorrichtung zur Herstellung von Bauteilen in einer Strahlschmelzanlage
US9067299B2 (en) * 2012-04-25 2015-06-30 Applied Materials, Inc. Printed chemical mechanical polishing pad
US9412579B2 (en) 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US9993873B2 (en) 2012-05-22 2018-06-12 General Electric Company System and method for three-dimensional printing
US9481134B2 (en) 2012-06-08 2016-11-01 Makerbot Industries, Llc Build platform leveling with tactile feedback
JP6272842B2 (ja) 2012-06-11 2018-01-31 キャボット マイクロエレクトロニクス コーポレイション モリブデン研磨のための組成物および方法
JP5994183B2 (ja) 2012-06-29 2016-09-21 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
US8778211B2 (en) 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
US9174388B2 (en) 2012-08-16 2015-11-03 Stratasys, Inc. Draw control for extrusion-based additive manufacturing systems
CA2883771C (en) 2012-09-05 2023-03-21 Aprecia Pharmaceuticals Company Three-dimensional printing system and equipment assembly
US8888480B2 (en) 2012-09-05 2014-11-18 Aprecia Pharmaceuticals Company Three-dimensional printing system and equipment assembly
JP6196858B2 (ja) 2012-09-24 2017-09-13 株式会社荏原製作所 研磨方法および研磨装置
US9718975B2 (en) 2012-09-25 2017-08-01 3M Innovative Properties Company Radiation curable ink composition
US9610239B2 (en) 2012-10-11 2017-04-04 Dow Corning Corporation Aqueous silicone polyether microemulsions
CN202825512U (zh) 2012-10-11 2013-03-27 中芯国际集成电路制造(北京)有限公司 研磨垫及化学机械研磨机台
US9233504B2 (en) 2012-10-29 2016-01-12 Makerbot Industries, Llc Tagged build material for three-dimensional printing
EP2917797B1 (en) 2012-11-08 2021-06-30 DDM Systems, Inc. Systems and methods for additive manufacturing and repair of metal components
KR20150085000A (ko) 2012-11-16 2015-07-22 어플라이드 머티어리얼스, 인코포레이티드 캐리어 헤드용 센서들에 의한 기록 측정들
CN104853901B (zh) 2012-12-17 2018-06-05 阿卡姆股份公司 添加材料制造方法和设备
US10357435B2 (en) 2012-12-18 2019-07-23 Dentca, Inc. Photo-curable resin compositions and method of using the same in three-dimensional printing for manufacturing artificial teeth and denture base
US11673155B2 (en) 2012-12-27 2023-06-13 Kateeva, Inc. Techniques for arrayed printing of a permanent layer with improved speed and accuracy
CA2936015C (en) 2013-01-17 2021-05-25 Ehsan Toyserkani Systems and methods for additive manufacturing of heterogeneous porous structures and structures made therefrom
US9649742B2 (en) 2013-01-22 2017-05-16 Nexplanar Corporation Polishing pad having polishing surface with continuous protrusions
EP2945755B1 (en) 2013-02-06 2019-09-11 Sun Chemical Corporation Digital printing inks
CN105122135B (zh) 2013-02-12 2020-03-20 卡本有限公司 连续液体中间相打印
US20140256231A1 (en) 2013-03-07 2014-09-11 Dow Global Technologies Llc Multilayer Chemical Mechanical Polishing Pad With Broad Spectrum, Endpoint Detection Window
CN105209241B (zh) 2013-03-14 2018-07-13 斯特塔西有限公司 基于聚合物的模具和其制造方法
US9152340B2 (en) 2013-05-28 2015-10-06 Netapp, Inc. System and method for managing and producing a dataset image across multiple storage systems
JP5955275B2 (ja) 2013-06-12 2016-07-20 富士フイルム株式会社 画像形成方法、加飾シートの製造方法、成形加工方法、加飾シート成形物の製造方法、インモールド成形品の製造方法
US20140370788A1 (en) 2013-06-13 2014-12-18 Cabot Microelectronics Corporation Low surface roughness polishing pad
US10183329B2 (en) 2013-07-19 2019-01-22 The Boeing Company Quality control of additive manufactured parts
US20150038066A1 (en) 2013-07-31 2015-02-05 Nexplanar Corporation Low density polishing pad
GB201313841D0 (en) 2013-08-02 2013-09-18 Rolls Royce Plc Method of Manufacturing a Component
KR20180110213A (ko) 2013-08-06 2018-10-08 어플라이드 머티어리얼스, 인코포레이티드 국부적으로 가열되는 다-구역 기판 지지부
US9855698B2 (en) 2013-08-07 2018-01-02 Massachusetts Institute Of Technology Automatic process control of additive manufacturing device
JP5992375B2 (ja) 2013-08-08 2016-09-14 株式会社東芝 静電チャック、載置プレート支持台及び静電チャックの製造方法
CN105453232B (zh) 2013-08-10 2019-04-05 应用材料公司 具有促进受控的调节的材料组成的cmp垫
US20150056895A1 (en) 2013-08-22 2015-02-26 Cabot Microelectronics Corporation Ultra high void volume polishing pad with closed pore structure
WO2015026614A1 (en) 2013-08-22 2015-02-26 Cabot Microelectronics Corporation Polishing pad with porous interface and solid core, and related apparatus and methods
DE102013217422A1 (de) 2013-09-02 2015-03-05 Carl Zeiss Industrielle Messtechnik Gmbh Koordinatenmessgerät und Verfahren zur Vermessung und mindestens teilweisen Erzeugung eines Werkstücks
CN103465155B (zh) 2013-09-06 2016-05-11 蓝思科技股份有限公司 一种环氧树脂型金刚石研磨垫及其制备方法
US9425121B2 (en) 2013-09-11 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated fan-out structure with guiding trenches in buffer layer
KR101405333B1 (ko) 2013-09-12 2014-06-11 유비머트리얼즈주식회사 연마 입자, 연마 슬러리 및 이를 이용한 반도체 소자의 제조 방법
US9308620B2 (en) 2013-09-18 2016-04-12 Texas Instruments Incorporated Permeated grooving in CMP polishing pads
US9053908B2 (en) 2013-09-19 2015-06-09 Lam Research Corporation Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching
GB201316815D0 (en) 2013-09-23 2013-11-06 Renishaw Plc Additive manufacturing apparatus and method
EP3050082B1 (en) 2013-09-25 2021-05-05 3M Innovative Properties Company System for polishing a substrate
CA3114978A1 (en) 2013-09-30 2015-04-02 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particles and methods of forming same
WO2015055550A1 (en) 2013-10-17 2015-04-23 Luxexcel Holding B.V. Device for printing a three-dimensional structure
CN203542340U (zh) 2013-10-21 2014-04-16 中芯国际集成电路制造(北京)有限公司 一种化学机械研磨垫
US8980749B1 (en) 2013-10-24 2015-03-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing silicon wafers
US9831074B2 (en) 2013-10-24 2017-11-28 Applied Materials, Inc. Bipolar collimator utilized in a physical vapor deposition chamber
EP3063591B1 (en) 2013-10-30 2018-04-04 Anocoil Corporation Lithographic printing plate precursors and coating
US9421666B2 (en) * 2013-11-04 2016-08-23 Applied Materials, Inc. Printed chemical mechanical polishing pad having abrasives therein
US9481069B2 (en) 2013-11-06 2016-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing apparatus and polishing method using the same
US9352443B2 (en) 2013-11-13 2016-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Platen assembly, chemical-mechanical polisher, and method for polishing substrate
US9850402B2 (en) 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
US9993907B2 (en) 2013-12-20 2018-06-12 Applied Materials, Inc. Printed chemical mechanical polishing pad having printed window
CN104742007B (zh) 2013-12-30 2017-08-25 中芯国际集成电路制造(北京)有限公司 化学机械研磨装置和化学机械研磨方法
EP3096936B1 (en) 2014-01-23 2019-10-09 Ricoh Company, Ltd. Method for forming a three-dimensional object
WO2015120429A1 (en) 2014-02-10 2015-08-13 President And Fellows Of Harvard College Three-dimensional (3d) printed composite structure and 3d printable composite ink formulation
WO2015120430A1 (en) 2014-02-10 2015-08-13 President And Fellows Of Harvard College 3d-printed polishing pad for chemical-mechanical planarization (cmp)
US20170173865A1 (en) 2014-02-10 2017-06-22 Stratasys Ltd. Composition and method for additive manufacturing of an object
DE102014202945B4 (de) * 2014-02-18 2017-01-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen eines organischen elektronischen Bauelementes und organisches elektronisches Bauelement
US9472410B2 (en) 2014-03-05 2016-10-18 Applied Materials, Inc. Pixelated capacitance controlled ESC
JP2015174272A (ja) 2014-03-14 2015-10-05 セイコーエプソン株式会社 三次元造形物の製造方法、三次元造形物製造装置および三次元造形物
US9259820B2 (en) 2014-03-28 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with polishing layer and window
JP6640106B2 (ja) 2014-04-03 2020-02-05 スリーエム イノベイティブ プロパティズ カンパニー 研磨パッド及びシステム、並びにその作製方法及び使用方法
WO2015161210A1 (en) 2014-04-17 2015-10-22 Cabot Microelectronics Corporation Cmp polishing pad with columnar structure and methods related thereto
US9314897B2 (en) 2014-04-29 2016-04-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US9333620B2 (en) 2014-04-29 2016-05-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with clear endpoint detection window
US9259821B2 (en) 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US20150375361A1 (en) 2014-06-25 2015-12-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
JP2016023209A (ja) 2014-07-17 2016-02-08 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
WO2016011586A1 (zh) 2014-07-21 2016-01-28 王雅苹 一种大倾角地区的垂直地震数据桥式标定方法
US9731398B2 (en) 2014-08-22 2017-08-15 Rohm And Haas Electronic Materials Cmp Holding, Inc. Polyurethane polishing pad
US9826630B2 (en) 2014-09-04 2017-11-21 Nxp Usa, Inc. Fan-out wafer level packages having preformed embedded ground plane connections and methods for the fabrication thereof
SG11201701465QA (en) 2014-09-05 2017-03-30 Applied Materials Inc Susceptor and pre-heat ring for thermal processing of substrates
KR20170068534A (ko) 2014-10-09 2017-06-19 어플라이드 머티어리얼스, 인코포레이티드 내부 채널들을 갖는 화학 기계적 폴리싱 패드
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
JP6545261B2 (ja) 2014-10-17 2019-07-17 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 付加製造プロセスを使用する、複合材料特性を有するcmpパッド構造
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
TWI689406B (zh) 2014-10-17 2020-04-01 美商應用材料股份有限公司 研磨墊及製造其之方法
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
KR101647894B1 (ko) 2014-11-27 2016-08-12 한국생산기술연구원 3차원 메탈프린터를 이용한 다공성 패드 제작방법
JP6422325B2 (ja) 2014-12-15 2018-11-14 花王株式会社 半導体基板用研磨液組成物
US10086500B2 (en) 2014-12-18 2018-10-02 Applied Materials, Inc. Method of manufacturing a UV curable CMP polishing pad
JP6452449B2 (ja) 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
US20170263478A1 (en) 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US10946495B2 (en) 2015-01-30 2021-03-16 Cmc Materials, Inc. Low density polishing pad
US9505952B2 (en) 2015-03-05 2016-11-29 Cabot Microelectronics Corporation Polishing composition containing ceria abrasive
CN107614265A (zh) 2015-03-25 2018-01-19 斯特拉塔西斯公司 导电油墨原位烧结的方法和系统
US9475168B2 (en) 2015-03-26 2016-10-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad window
WO2016173668A1 (en) 2015-04-30 2016-11-03 Hewlett-Packard Development Company, L.P. Misalignment detection for a 3d printing device
US10017857B2 (en) 2015-05-02 2018-07-10 Applied Materials, Inc. Method and apparatus for controlling plasma near the edge of a substrate
CN106206409B (zh) 2015-05-08 2019-05-07 华邦电子股份有限公司 堆叠电子装置及其制造方法
CN205703794U (zh) 2015-06-29 2016-11-23 智胜科技股份有限公司 研磨垫的研磨层
US10163610B2 (en) 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US9761459B2 (en) 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
WO2017035007A1 (en) 2015-08-21 2017-03-02 Voxel8, Inc. Calibration and alignment of additive manufacturing deposition heads
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
WO2017049155A1 (en) 2015-09-16 2017-03-23 Applied Materials, Inc. Selectively openable support platen for additive manufacturing
JP6584895B2 (ja) 2015-09-30 2019-10-02 富士紡ホールディングス株式会社 研磨パッド
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
TW202400363A (zh) 2015-10-16 2024-01-01 美商應用材料股份有限公司 拋光墊及形成其之方法
JP2017078123A (ja) 2015-10-21 2017-04-27 Kjケミカルズ株式会社 サポート材用活性エネルギー線硬化性樹脂組成物
US9881820B2 (en) 2015-10-22 2018-01-30 Lam Research Corporation Front opening ring pod
US10124492B2 (en) 2015-10-22 2018-11-13 Lam Research Corporation Automated replacement of consumable parts using end effectors interfacing with plasma processing system
US20170115657A1 (en) 2015-10-22 2017-04-27 Lam Research Corporation Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ
US10062599B2 (en) 2015-10-22 2018-08-28 Lam Research Corporation Automated replacement of consumable parts using interfacing chambers
CN108290267B (zh) 2015-10-30 2021-04-20 应用材料公司 形成具有期望ζ电位的抛光制品的设备与方法
EP3369791A4 (en) 2015-10-30 2018-09-05 Konica Minolta, Inc. Active light ray-curable inkjet ink composition and inkjet recording method
GB201519187D0 (en) 2015-10-30 2015-12-16 Knauf Insulation Ltd Improved binder compositions and uses thereof
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10229769B2 (en) 2015-11-20 2019-03-12 Xerox Corporation Three phase immiscible polymer-metal blends for high conductivty composites
US10189143B2 (en) 2015-11-30 2019-01-29 Taiwan Semiconductor Manufacturing Company Limited Polishing pad, method for manufacturing polishing pad, and polishing method
US9601319B1 (en) 2016-01-07 2017-03-21 Lam Research Corporation Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process
CN108698206B (zh) 2016-01-19 2021-04-02 应用材料公司 多孔化学机械抛光垫
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10685862B2 (en) 2016-01-22 2020-06-16 Applied Materials, Inc. Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device
US9956314B2 (en) 2016-01-26 2018-05-01 Modern Ideas LLC Adhesive for use with bone and bone-like structures
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US9966231B2 (en) 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
KR102334828B1 (ko) 2016-03-09 2021-12-06 어플라이드 머티어리얼스, 인코포레이티드 적층 제조에서 제조된 형상들의 보정
WO2017155969A1 (en) 2016-03-09 2017-09-14 Applied Materials, Inc. Pad structure and fabrication methods
CN108883515A (zh) 2016-03-24 2018-11-23 应用材料公司 用于化学机械抛光的纹理化的小垫
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
KR20170127724A (ko) 2016-05-12 2017-11-22 삼성전자주식회사 플라즈마 처리 장치
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US9852889B1 (en) 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
US10283330B2 (en) 2016-07-25 2019-05-07 Lam Research Corporation Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators
JP6791680B2 (ja) 2016-08-09 2020-11-25 株式会社フジミインコーポレーテッド 表面処理組成物およびこれを用いた洗浄方法
US20180100074A1 (en) 2016-10-11 2018-04-12 Xerox Corporation Ink composition for use in 3d printing
US10259956B2 (en) 2016-10-11 2019-04-16 Xerox Corporation Curable ink composition
US20180100073A1 (en) 2016-10-11 2018-04-12 Xerox Corporation Ink composition for use in 3d printing
US10930535B2 (en) 2016-12-02 2021-02-23 Applied Materials, Inc. RFID part authentication and tracking of processing components
KR20180094428A (ko) 2017-02-15 2018-08-23 삼성전자주식회사 화학 기계적 연마 장치
US20180323042A1 (en) 2017-05-02 2018-11-08 Applied Materials, Inc. Method to modulate the wafer edge sheath in a plasma processing chamber
US11059149B2 (en) 2017-05-25 2021-07-13 Applied Materials, Inc. Correction of fabricated shapes in additive manufacturing using initial layer
US10967482B2 (en) 2017-05-25 2021-04-06 Applied Materials, Inc. Fabrication of polishing pad by additive manufacturing onto mold
JP6826955B2 (ja) 2017-06-14 2021-02-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11458673B2 (en) 2017-06-21 2022-10-04 Carbon, Inc. Resin dispenser for additive manufacturing
US10763081B2 (en) 2017-07-10 2020-09-01 Applied Materials, Inc. Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
JP7102724B2 (ja) 2017-12-19 2022-07-20 株式会社リコー 電極、非水系蓄電素子、塗布液及び電極の製造方法
JP7033907B2 (ja) 2017-12-21 2022-03-11 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
WO2019143473A1 (en) 2018-01-22 2019-07-25 Applied Materials, Inc. Processing with powered edge ring
KR20200108098A (ko) 2018-02-05 2020-09-16 어플라이드 머티어리얼스, 인코포레이티드 3d 프린트된 cmp 패드들을 위한 압전 엔드포인팅
WO2019190676A1 (en) 2018-03-30 2019-10-03 Applied Materials, Inc. Integrating 3d printing into multi-process fabrication schemes
EP3790706A4 (en) 2018-05-07 2022-02-16 Applied Materials, Inc. CHEMICAL MECHANICAL POLISHING PADS WITH ADJUSTABLE HYDROPHIL AND ZETA POTENTIAL
US10600623B2 (en) 2018-05-28 2020-03-24 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US10347500B1 (en) 2018-06-04 2019-07-09 Applied Materials, Inc. Device fabrication via pulsed plasma
US10847347B2 (en) 2018-08-23 2020-11-24 Applied Materials, Inc. Edge ring assembly for a substrate support in a plasma processing chamber
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
CN112913140A (zh) 2018-11-09 2021-06-04 应用材料公司 用于处理腔室的射频滤波器系统
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US20200230781A1 (en) 2019-01-23 2020-07-23 Applied Materials, Inc. Polishing pads formed using an additive manufacturing process and methods related thereto
KR102655348B1 (ko) 2019-03-19 2024-04-04 어플라이드 머티어리얼스, 인코포레이티드 소수성 및 아이스포빅 코팅
US11851570B2 (en) 2019-04-12 2023-12-26 Applied Materials, Inc. Anionic polishing pads formed by printing processes

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW365561B (en) * 1997-07-30 1999-08-01 Peripheral Products Inc Polishing semiconductor wafer
TW480205B (en) * 1999-07-20 2002-03-21 Agere Syst Guardian Corp Engineered polishing pad for improved slurry distribution
US20080004743A1 (en) * 2006-06-28 2008-01-03 3M Innovative Properties Company Abrasive Articles, CMP Monitoring System and Method
TWI388398B (zh) * 2008-10-22 2013-03-11
TW201527040A (zh) * 2011-05-05 2015-07-16 Nexplanar Corp 具有對準特徵之拋光墊
TWI462797B (zh) * 2011-11-24 2014-12-01 Univ Nat Taiwan Science Tech Electric field assisted chemical mechanical polishing system and its method
TWM481855U (zh) * 2013-12-18 2014-07-11 Hui-Teng Xue 具有緊放模式的abs煞車配件組

Also Published As

Publication number Publication date
US20200135517A1 (en) 2020-04-30
TWI697384B (zh) 2020-07-01
JP7277528B2 (ja) 2023-05-19
JP2022023027A (ja) 2022-02-07
TW201718178A (zh) 2017-06-01
CN108369904B (zh) 2023-04-07
CN116197811A (zh) 2023-06-02
US20170133252A1 (en) 2017-05-11
JP6940497B2 (ja) 2021-09-29
US10593574B2 (en) 2020-03-17
US11986922B2 (en) 2024-05-21
TW202110581A (zh) 2021-03-16
WO2017078933A1 (en) 2017-05-11
CN108369904A (zh) 2018-08-03
KR20180071368A (ko) 2018-06-27
JP2018535107A (ja) 2018-11-29

Similar Documents

Publication Publication Date Title
TWI749562B (zh) 用於結合cmp製程之追蹤資料與3d列印之cmp耗材的技術
JP6898379B2 (ja) 印刷による化学機械研磨パッド
CN110076684B (zh) 具有受控孔隙率的打印化学机械抛光垫
CN100410016C (zh) 抛光衬垫、制造抛光衬垫的方法以及抛光系统和抛光方法
CN104471685B (zh) 监控扣环厚度及压力控制
KR20170070210A (ko) 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성
CN106716604A (zh) 具有内部通道的化学机械研磨垫
KR20070011250A (ko) 성형 표면을 갖는 유지 링
US9987720B2 (en) Method for operating a polishing head and method for polishing a substrate
CN109475997A (zh) 用于化学机械抛光的保持环
TWI685896B (zh) 具有內部通道的化學機械研磨墊之製造方法
CN112770872A (zh) 具有电容式剪力传感器的抛光系统