DE60039054D1 - Gt-polierkörper, poliervorrichtung, polierverfahren und verfahren zum herstellen einer halbleitervorrichtung (2002/23) - Google Patents

Gt-polierkörper, poliervorrichtung, polierverfahren und verfahren zum herstellen einer halbleitervorrichtung (2002/23)

Info

Publication number
DE60039054D1
DE60039054D1 DE60039054T DE60039054T DE60039054D1 DE 60039054 D1 DE60039054 D1 DE 60039054D1 DE 60039054 T DE60039054 T DE 60039054T DE 60039054 T DE60039054 T DE 60039054T DE 60039054 D1 DE60039054 D1 DE 60039054D1
Authority
DE
Germany
Prior art keywords
polishing
manufacturing
semiconductor device
polishing body
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60039054T
Other languages
English (en)
Inventor
Akira Ishikawa
Tatsuya Senga
Shirou Maruguchi
Takashi Arai
Hosei Nakahira
Eiji Matsukawa
Akira Miyaji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8815799A external-priority patent/JP2000286218A/ja
Priority claimed from JP25494199A external-priority patent/JP2001079755A/ja
Priority claimed from JP2000025373A external-priority patent/JP2001212752A/ja
Priority claimed from JP2000025386A external-priority patent/JP2000354952A/ja
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of DE60039054D1 publication Critical patent/DE60039054D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
DE60039054T 1999-03-30 2000-03-14 Gt-polierkörper, poliervorrichtung, polierverfahren und verfahren zum herstellen einer halbleitervorrichtung (2002/23) Expired - Lifetime DE60039054D1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP8815799A JP2000286218A (ja) 1999-03-30 1999-03-30 研磨部材、研磨装置及び研磨方法
JP9817999 1999-04-05
JP25494199A JP2001079755A (ja) 1999-09-08 1999-09-08 研磨体及び研磨方法
JP2000025373A JP2001212752A (ja) 2000-02-02 2000-02-02 研磨体、研磨装置、半導体デバイス製造方法、及び半導体デバイス
JP2000025386A JP2000354952A (ja) 1999-04-05 2000-02-02 研磨部材、研磨方法、研磨装置、半導体デバイス製造方法、及び半導体デバイス
PCT/JP2000/001544 WO2000059680A1 (fr) 1999-03-30 2000-03-14 Corps de polissage, dispositif de polissage, procede de polissage et procede de fabrication d'un dispositif a semi-conducteur

Publications (1)

Publication Number Publication Date
DE60039054D1 true DE60039054D1 (de) 2008-07-10

Family

ID=27525331

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60039054T Expired - Lifetime DE60039054D1 (de) 1999-03-30 2000-03-14 Gt-polierkörper, poliervorrichtung, polierverfahren und verfahren zum herstellen einer halbleitervorrichtung (2002/23)

Country Status (7)

Country Link
US (1) US6749714B1 (de)
EP (1) EP1211023B1 (de)
KR (1) KR100471527B1 (de)
CN (2) CN1312742C (de)
DE (1) DE60039054D1 (de)
TW (2) TW511174B (de)
WO (1) WO2000059680A1 (de)

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JP2007081322A (ja) * 2005-09-16 2007-03-29 Jsr Corp 化学機械研磨パッドの製造方法
JP2005340271A (ja) * 2004-05-24 2005-12-08 Jsr Corp 化学機械研磨用パッド
US20060019417A1 (en) * 2004-07-26 2006-01-26 Atsushi Shigeta Substrate processing method and substrate processing apparatus
US7252582B2 (en) 2004-08-25 2007-08-07 Jh Rhodes Company, Inc. Optimized grooving structure for a CMP polishing pad
US20060194530A1 (en) * 2005-02-25 2006-08-31 Thomson Clifford O Polishing pad for use in polishing work pieces
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US7357703B2 (en) * 2005-12-28 2008-04-15 Jsr Corporation Chemical mechanical polishing pad and chemical mechanical polishing method
KR100771548B1 (ko) * 2006-06-30 2007-11-07 주식회사 하이닉스반도체 반도체 소자의 박막 평탄화 방법
US20080220702A1 (en) * 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
US20080003935A1 (en) * 2006-07-03 2008-01-03 Chung-Chih Feng Polishing pad having surface texture
US7300340B1 (en) * 2006-08-30 2007-11-27 Rohm and Haas Electronics Materials CMP Holdings, Inc. CMP pad having overlaid constant area spiral grooves
US20080274674A1 (en) * 2007-05-03 2008-11-06 Cabot Microelectronics Corporation Stacked polishing pad for high temperature applications
US7530887B2 (en) * 2007-08-16 2009-05-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with controlled wetting
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JP2011071303A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 半導体装置の製造方法
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EP2732917A4 (de) * 2011-07-15 2015-04-15 Toray Industries Polierkissen
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JPWO2013039203A1 (ja) * 2011-09-16 2015-03-26 東レ株式会社 研磨パッド
JP2013201213A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 研磨パッドおよび研磨方法
JP5934053B2 (ja) * 2012-08-14 2016-06-15 セイコープレシジョン株式会社 Ｘ線処理装置
US9034063B2 (en) * 2012-09-27 2015-05-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing grooved chemical mechanical polishing layers
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US10160092B2 (en) * 2013-03-14 2018-12-25 Cabot Microelectronics Corporation Polishing pad having polishing surface with continuous protrusions having tapered sidewalls
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CN103878681B (zh) * 2014-03-06 2016-04-13 浙江工业大学 一种具有加载装置的多级抛光盘
CN103878682B (zh) * 2014-03-06 2016-04-13 浙江工业大学 一种多级加工研磨抛光装置
CN104044087B (zh) * 2014-06-18 2016-09-07 蓝思科技股份有限公司 一种蓝宝石抛光用铜盘及其修盘方法
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US9776361B2 (en) * 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
CN105563299B (zh) * 2014-11-05 2017-12-01 中芯国际集成电路制造(上海)有限公司 金属的化学机械研磨方法
CN113103145B (zh) 2015-10-30 2023-04-11 应用材料公司 形成具有期望ζ电位的抛光制品的设备与方法
KR102040144B1 (ko) * 2016-01-08 2019-11-04 반도 카가쿠 가부시키가이샤 연마재
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CN117283450A (zh) 2016-01-19 2023-12-26 应用材料公司 多孔化学机械抛光垫
JP6921527B2 (ja) * 2016-02-05 2021-08-18 芝浦機械株式会社 研磨装置
JP6754519B2 (ja) * 2016-02-15 2020-09-16 国立研究開発法人海洋研究開発機構 研磨方法
US10875146B2 (en) * 2016-03-24 2020-12-29 Rohm And Haas Electronic Materials Cmp Holdings Debris-removal groove for CMP polishing pad
JP6568006B2 (ja) * 2016-04-08 2019-08-28 株式会社荏原製作所 研磨装置および研磨方法
TWI593511B (zh) 2016-06-08 2017-08-01 智勝科技股份有限公司 研磨墊及研磨方法
CN106181734A (zh) * 2016-08-01 2016-12-07 中国电子科技集团公司第四十六研究所 一种用于氮化镓单晶片的合成树脂锡盘双面抛光方法
CN107053030A (zh) * 2017-01-06 2017-08-18 浙江工业大学 一种具有梯度功能的扇形组合式研抛盘
CN106914816A (zh) * 2017-03-21 2017-07-04 江苏吉星新材料有限公司 一种蓝宝石晶片抛光用快拆式树脂铜盘
CN108655946B (zh) * 2017-03-31 2021-06-18 台湾积体电路制造股份有限公司 研磨头及研磨半导体晶片的背侧的方法
US10777418B2 (en) * 2017-06-14 2020-09-15 Rohm And Haas Electronic Materials Cmp Holdings, I Biased pulse CMP groove pattern
US10857647B2 (en) 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings High-rate CMP polishing method
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CN108714832A (zh) * 2018-06-08 2018-10-30 苏州珂玛材料科技股份有限公司 抛光机
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JP2020131353A (ja) 2019-02-19 2020-08-31 パナソニックＩｐマネジメント株式会社 研磨加工システム、学習装置、学習装置の学習方法
JP7253458B2 (ja) * 2019-06-27 2023-04-06 株式会社荏原製作所 光学式膜厚測定装置の最適な動作レシピを決定する方法、装置、およびシステム
CN110497306B (zh) * 2019-08-20 2020-08-14 深圳富鼎智控有限公司 一种半导体材料加工用化学抛光机
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Also Published As

Publication number Publication date
WO2000059680A1 (fr) 2000-10-12
EP1211023B1 (de) 2008-05-28
TW530348B (en) 2003-05-01
CN1345264A (zh) 2002-04-17
TW511174B (en) 2002-11-21
KR100471527B1 (ko) 2005-03-09
EP1211023A4 (de) 2005-11-30
US6749714B1 (en) 2004-06-15
EP1211023A1 (de) 2002-06-05
CN1312742C (zh) 2007-04-25
CN1551303A (zh) 2004-12-01
KR20010102535A (ko) 2001-11-15

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