EP1274123A4 - Poliermittel für das polieren von halbleiterscheiben und methode zur herstellung von halbleiteranordnungen unter verwendung dieses poliermittels - Google Patents

Poliermittel für das polieren von halbleiterscheiben und methode zur herstellung von halbleiteranordnungen unter verwendung dieses poliermittels

Info

Publication number
EP1274123A4
EP1274123A4 EP01921818A EP01921818A EP1274123A4 EP 1274123 A4 EP1274123 A4 EP 1274123A4 EP 01921818 A EP01921818 A EP 01921818A EP 01921818 A EP01921818 A EP 01921818A EP 1274123 A4 EP1274123 A4 EP 1274123A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
polishing
same
compound
manufacturing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01921818A
Other languages
English (en)
French (fr)
Other versions
EP1274123A1 (de
Inventor
Takanori Kido
Fumio Tsujino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of EP1274123A1 publication Critical patent/EP1274123A1/de
Publication of EP1274123A4 publication Critical patent/EP1274123A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP01921818A 2000-04-13 2001-04-12 Poliermittel für das polieren von halbleiterscheiben und methode zur herstellung von halbleiteranordnungen unter verwendung dieses poliermittels Withdrawn EP1274123A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000112532 2000-04-13
JP2000112532 2000-04-13
PCT/JP2001/003147 WO2001080296A1 (fr) 2000-04-13 2001-04-12 Compose de polissage pour le polissage de dispositif a semiconducteur et procede de fabrication de dispositif a semiconducteur dans lesquel ledit compose est utilise

Publications (2)

Publication Number Publication Date
EP1274123A1 EP1274123A1 (de) 2003-01-08
EP1274123A4 true EP1274123A4 (de) 2007-03-07

Family

ID=18624686

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01921818A Withdrawn EP1274123A4 (de) 2000-04-13 2001-04-12 Poliermittel für das polieren von halbleiterscheiben und methode zur herstellung von halbleiteranordnungen unter verwendung dieses poliermittels

Country Status (5)

Country Link
EP (1) EP1274123A4 (de)
KR (2) KR100826725B1 (de)
AU (1) AU4875601A (de)
TW (1) TW586157B (de)
WO (1) WO2001080296A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1748292B (zh) * 2002-12-31 2010-09-01 三菱住友硅晶株式会社 化学机械研磨用浆料组合物、利用它的半导体元件的表面平坦化方法以及浆料组合物的选择比控制方法
JP3875668B2 (ja) * 2003-08-26 2007-01-31 三井金属鉱業株式会社 フッ素を含有するセリウム系研摩材およびその製造方法
CN1849264B (zh) * 2003-09-12 2010-09-22 日立化成工业株式会社 铈盐、其制造方法、氧化铈以及铈系研磨剂
TW200521273A (en) * 2003-10-22 2005-07-01 Rorze Corp Liquid composition, process for producing the same, film of low dielectric constant, abradant and electronic component
KR100672940B1 (ko) 2004-08-03 2007-01-24 삼성전자주식회사 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법
KR100603136B1 (ko) * 2004-08-20 2006-07-20 테크노세미켐 주식회사 텅스텐막 연마용 ｃｍｐ 조성물
TW200619368A (en) * 2004-10-28 2006-06-16 Nissan Chemical Ind Ltd Polishing composition for silicon wafer
JP4876215B2 (ja) * 2005-01-21 2012-02-15 独立行政法人産業技術総合研究所 Ｃｍｐ研磨方法、ｃｍｐ研磨装置、及び半導体デバイスの製造方法
DE102005017372A1 (de) * 2005-04-14 2006-10-19 Degussa Ag Wässrige Ceroxiddispersion
US20090056231A1 (en) * 2007-08-28 2009-03-05 Daniela White Copper CMP composition containing ionic polyelectrolyte and method
JP5108134B1 (ja) * 2011-05-20 2012-12-26 株式会社オハラ 情報記録媒体用基板の製造方法
CN104471684B (zh) * 2012-05-30 2018-01-23 可乐丽股份有限公司 用于化学机械抛光的浆料和化学机械抛光方法
JP6016301B2 (ja) 2013-02-13 2016-10-26 昭和電工株式会社 単結晶ＳｉＣ基板の表面加工方法、その製造方法及び単結晶ＳｉＣ基板の表面加工用研削プレート
KR101464881B1 (ko) * 2013-06-10 2014-11-25 오씨아이 주식회사 금속 제거용 킬레이트제를 포함하는 웨이퍼 세정용 알칼리 수용액
CN106115612B (zh) * 2016-07-11 2017-11-17 中国电子科技集团公司第四十五研究所 一种晶圆平坦化方法
KR102429708B1 (ko) * 2020-08-05 2022-08-05 주식회사 아이에스티이 기판 폴리싱을 위한 세륨옥사이드-징크옥사이드 합금 연마입자 및 그 제조방법
WO2024162437A1 (ja) * 2023-02-02 2024-08-08 三井金属鉱業株式会社 研磨材スラリー

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1347428A1 (ru) * 1985-07-26 1991-06-07 Предприятие П/Я Х-5476 Суспензи дл обработки стекл нных изделий
JPH0770553A (ja) * 1993-09-01 1995-03-14 Asahi Glass Co Ltd 研磨液及び基体の研磨方法
JPH10176164A (ja) * 1996-10-17 1998-06-30 Showa Denko Kk ガラス研磨用研磨材組成物およびその製造方法
JPH1121545A (ja) * 1997-06-30 1999-01-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
WO1999043761A1 (fr) * 1998-02-24 1999-09-02 Showa Denko K.K. Composition abrasive de polissage d'un dispositif semiconducteur et procede de production d'un dispositif semiconducteur afferent
WO2000008678A1 (fr) * 1998-08-05 2000-02-17 Showa Denko K. K. Composition abrasive pour le polissage de composants lsi

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904159A (en) * 1995-11-10 1999-05-18 Tokuyama Corporation Polishing slurries and a process for the production thereof
JPH10102040A (ja) * 1996-09-30 1998-04-21 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
JPH10309660A (ja) * 1997-05-07 1998-11-24 Tokuyama Corp 仕上げ研磨剤
JPH11181403A (ja) * 1997-12-18 1999-07-06 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1347428A1 (ru) * 1985-07-26 1991-06-07 Предприятие П/Я Х-5476 Суспензи дл обработки стекл нных изделий
JPH0770553A (ja) * 1993-09-01 1995-03-14 Asahi Glass Co Ltd 研磨液及び基体の研磨方法
JPH10176164A (ja) * 1996-10-17 1998-06-30 Showa Denko Kk ガラス研磨用研磨材組成物およびその製造方法
JPH1121545A (ja) * 1997-06-30 1999-01-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
WO1999043761A1 (fr) * 1998-02-24 1999-09-02 Showa Denko K.K. Composition abrasive de polissage d'un dispositif semiconducteur et procede de production d'un dispositif semiconducteur afferent
WO2000008678A1 (fr) * 1998-08-05 2000-02-17 Showa Denko K. K. Composition abrasive pour le polissage de composants lsi
EP1130630A1 (de) * 1998-08-05 2001-09-05 Showa Denko Kabushiki Kaisha Polierpaste zum polieren eines lsi

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO0180296A1 *

Also Published As

Publication number Publication date
KR20080005313A (ko) 2008-01-10
KR20020026877A (ko) 2002-04-12
TW586157B (en) 2004-05-01
EP1274123A1 (de) 2003-01-08
AU4875601A (en) 2001-10-30
KR100826725B1 (ko) 2008-04-30
WO2001080296A1 (fr) 2001-10-25
KR100863088B1 (ko) 2008-10-13

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