KR20080005313A - 반도체 장치 연마용 연마제 조성물 및 이것을 이용한반도체 장치의 제조 방법 - Google Patents
반도체 장치 연마용 연마제 조성물 및 이것을 이용한반도체 장치의 제조 방법 Download PDFInfo
- Publication number
- KR20080005313A KR20080005313A KR1020077030868A KR20077030868A KR20080005313A KR 20080005313 A KR20080005313 A KR 20080005313A KR 1020077030868 A KR1020077030868 A KR 1020077030868A KR 20077030868 A KR20077030868 A KR 20077030868A KR 20080005313 A KR20080005313 A KR 20080005313A
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- South Korea
- Prior art keywords
- polishing
- acid
- semiconductor device
- abrasive
- oxide
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 131
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 150000001875 compounds Chemical class 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 51
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 45
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000010419 fine particle Substances 0.000 claims abstract description 36
- 239000002738 chelating agent Substances 0.000 claims abstract description 32
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- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims description 69
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical group OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- VKZRWSNIWNFCIQ-WDSKDSINSA-N (2s)-2-[2-[[(1s)-1,2-dicarboxyethyl]amino]ethylamino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)NCCN[C@H](C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-WDSKDSINSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000002270 dispersing agent Substances 0.000 claims description 10
- 150000003839 salts Chemical class 0.000 claims description 9
- 229910052776 Thorium Inorganic materials 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052770 Uranium Inorganic materials 0.000 claims description 8
- WDJHALXBUFZDSR-UHFFFAOYSA-N acetoacetic acid Chemical compound CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- 239000011575 calcium Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 8
- 229910052748 manganese Inorganic materials 0.000 claims description 8
- 239000011572 manganese Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052700 potassium Inorganic materials 0.000 claims description 8
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 claims description 6
- RNMCCPMYXUKHAZ-UHFFFAOYSA-N 2-[3,3-diamino-1,2,2-tris(carboxymethyl)cyclohexyl]acetic acid Chemical compound NC1(N)CCCC(CC(O)=O)(CC(O)=O)C1(CC(O)=O)CC(O)=O RNMCCPMYXUKHAZ-UHFFFAOYSA-N 0.000 claims description 6
- DMQQXDPCRUGSQB-UHFFFAOYSA-N 2-[3-[bis(carboxymethyl)amino]propyl-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCCN(CC(O)=O)CC(O)=O DMQQXDPCRUGSQB-UHFFFAOYSA-N 0.000 claims description 6
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 6
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 6
- 229960003330 pentetic acid Drugs 0.000 claims description 6
- 239000011164 primary particle Substances 0.000 claims description 6
- UWRBFYBQPCJRRL-UHFFFAOYSA-N 3-[bis(carboxymethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CC(O)=O)CC(O)=O UWRBFYBQPCJRRL-UHFFFAOYSA-N 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(iii) oxide Chemical compound O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 claims description 5
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 5
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 3
- 229920002845 Poly(methacrylic acid) Polymers 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 3
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 3
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 claims description 3
- 239000000920 calcium hydroxide Substances 0.000 claims description 3
- 229910001861 calcium hydroxide Inorganic materials 0.000 claims description 3
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 3
- UAMZXLIURMNTHD-UHFFFAOYSA-N dialuminum;magnesium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Mg+2].[Al+3].[Al+3] UAMZXLIURMNTHD-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 3
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 claims description 3
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 3
- 229910052863 mullite Inorganic materials 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910052845 zircon Inorganic materials 0.000 claims description 3
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 3
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000347 magnesium hydroxide Substances 0.000 claims description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- VCVKIIDXVWEWSZ-YFKPBYRVSA-N (2s)-2-[bis(carboxymethyl)amino]pentanedioic acid Chemical compound OC(=O)CC[C@@H](C(O)=O)N(CC(O)=O)CC(O)=O VCVKIIDXVWEWSZ-YFKPBYRVSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 22
- 239000006061 abrasive grain Substances 0.000 abstract description 12
- 239000003082 abrasive agent Substances 0.000 abstract description 6
- 238000005299 abrasion Methods 0.000 abstract 1
- 230000006378 damage Effects 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 11
- 239000002002 slurry Substances 0.000 description 11
- JYXGIOKAKDAARW-UHFFFAOYSA-N N-(2-hydroxyethyl)iminodiacetic acid Chemical compound OCCN(CC(O)=O)CC(O)=O JYXGIOKAKDAARW-UHFFFAOYSA-N 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 description 4
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 description 4
- 229960001230 asparagine Drugs 0.000 description 4
- 235000009582 asparagine Nutrition 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
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- 125000000524 functional group Chemical group 0.000 description 3
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- 239000000126 substance Substances 0.000 description 3
- RAEOEMDZDMCHJA-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-[2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]ethyl]amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CCN(CC(O)=O)CC(O)=O)CC(O)=O RAEOEMDZDMCHJA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000003141 primary amines Chemical class 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- 150000003335 secondary amines Chemical class 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- GPQBLHIADQOTKU-YFKPBYRVSA-N (2s)-5-amino-2-[bis(carboxymethyl)amino]-5-oxopentanoic acid Chemical compound NC(=O)CC[C@@H](C(O)=O)N(CC(O)=O)CC(O)=O GPQBLHIADQOTKU-YFKPBYRVSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-N Gluconic acid Natural products OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- -1 amine salt Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 description 1
- 159000000006 cesium salts Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000004417 unsaturated alkyl group Chemical group 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (11)
- 반도체 기판상에 질화규소막을 형성한 후, 질화규소막의 일부를 선택적으로 제거하여 반도체 기판을 노출시키고, 이어서 상기 질화규소막을 마스크로 하여 반도체 기판을 에칭하여 트렌치를 형성하며, 상기 질화규소막 및 상기 반도체 기판상에 산화규소막을 퇴적시켜 트렌치를 산화규소막으로 메우고, 질화규소막을 스토퍼로 하여 산화규소막을 평탄화 연마함으로써 상기 산화규소를 트렌치 내부에 선택적으로 남기는 공정에 있어서, 평탄화 연마를, 물, 연마재 미립자 및 킬레이트제를 포함하고, 상기 연마재가 산화세륨이며, 상기 산화세륨 미립자의 평균 입경이 0.1 내지 1.0㎛인 반도체 장치 연마용 연마제 조성물에 의해 수행함을 특징으로 하는 반도체 장치의 제조방법.
- 제 1항에 있어서, 상기 연마재가, 산화세륨 미립자와 다른 연마용 미립자로 이루어짐을 특징으로 하는 반도체 장치의 제조방법.
- 제 2항에 있어서, 상기 다른 연마용 미립자가, 산화알루미늄, 산화지르코늄, 이산화규소, 이산화티타늄, 이산화망간, 삼산화이망간, 산화크롬, 산화철, 산화주석, 산화아연, 알루미나 마그네시아 스피넬, 멀라이트, 지르콘, 수산화알루미늄, 수산화칼슘, 수산화마그네슘, 질화규소, 질화티타늄, 질화붕소, 탄화규소, 탄화티타늄, 다이아몬드로 이루어지는 그룹으로부터 선택된 적어도 1종임을 특징으로 하 는 반도체 장치의 제조방법.
- 제 1항에 있어서, 상기 산화세륨의 농도가 0.1 내지 10질량%이며, 킬레이트제의 첨가량이 상기 산화세륨의 질량에 대하여 0.01 내지 10질량비임을 특징으로 하는 반도체 장치의 제조방법.
- 제 2항 또는 제 3항에 있어서, 상기 산화세륨 미립자와 다른 연마용 미립자의 합계 미립자 농도가 0.1 내지 10질량%이고, 상기 킬레이트제의 첨가량이 상기 합계 미립자의 질량에 대하여 0.01 내지 10질량비임을 특징으로 하는 반도체 장치의 제조방법.
- 제 1항 내지 제 4항 중 어느 한 항에 있어서, 상기 킬레이트제가, 에틸렌디아민테트라아세트산(EDTA), 시클로헥산디아민테트라아세트산(CyDTA), 니트릴로트리아세트산(NTA), 히드록시에틸에틸렌디아민트리아세트산(HEDTA), 디에틸렌트리아민펜타아세트산(DTPA), 트리에틸렌테트라민헥사아세트산(TTHA), L-글루타민산디아세트산(GLDA), 아미노트리(메틸렌포스폰산), 1-히드록시에틸리덴-1,1-디포스폰산, 에틸렌디아민테트라(메틸렌포스폰산), 디에틸렌트리아민펜타(메틸렌포스폰산), β-알라닌디아세트산(β-ADA), α-알라닌디아세트산(α-ADA), 아스파라긴디아세트산(ASDA), 에틸렌디아민디숙신산(EDDS), 이미노디아세트산(IDA), 히드록시에틸이미노디아세트산(HEIDA), 1,3-프로판디아민테트라아세트산(1,3-PDTA)으로 이루어진 그 룹으로부터 선택되는 적어도 1종의 화합물, 또는 그 염임을 특징으로 하는 반도체 장치의 제조방법.
- 제 1항에 기재된 반도체 장치 연마용 연마제 조성물에 분산제를 0.08질량% 이하의 농도로 더 첨가하여 제조함을 특징으로 하는 반도체 장치의 제조방법.
- 제 7항에 있어서, 상기 분산제가, 폴리아크릴산기 또는 폴리메타크릴산기를 포함하는 분산제임을 특징으로 하는 반도체 장치의 제조방법.
- 제 1항 또는 제 7항에 있어서, 상기 반도체 장치 연마용 연마제 조성물에서, 연마재 미립자를 제외한 연마제 조성물중에, Mg, Al, K, Ca, Fe, Ni, Cu, Mn, Th, U의 원소로 이루어지는 그룹으로부터 선택된 적어도 1종의 원소가 불순물로서 함유되며, 함유되는 각 원소의 함유 농도가 각각 20ppm이하임을 특징으로 하는 반도체 장치의 제조방법.
- 제 1항에 있어서, 상기 산화세륨 미립자가, 그 순도가 99.9질량%이상이며, Mg, Al, K, Ca, Fe, Ni, Cu, Mn, Th, U의 원소로 이루어지는 그룹으로부터 선택된 적어도 1종이며, 함유되는 각 원소의 함유 농도가 각각 30ppm이하임을 특징으로 하는 반도체 장치의 제조방법.
- 제 1항에 있어서, 상기 산화세륨의 1차 입경이 0.02㎛ 내지 0.2㎛임을 특징으로 하는 반도체 장치의 제조방법.
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KR1020077030868A KR100863088B1 (ko) | 2000-04-13 | 2001-04-12 | 반도체 장치 연마용 연마제 조성물 및 이것을 이용한반도체 장치의 제조 방법 |
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EP1580802A4 (en) * | 2002-12-31 | 2007-03-28 | Sumco Corp | CHEMICAL MECHANICAL POLISHING GROWER COMPOSITION, SEMICONDUCTOR ELEMENT SURFACE PLANARIZATION METHOD IN WHICH THE COMPOSITION IS USED, AND METHOD OF ADJUSTING THE SELECTION RATE OF SAID COMPOSITION |
JP3875668B2 (ja) * | 2003-08-26 | 2007-01-31 | 三井金属鉱業株式会社 | フッ素を含有するセリウム系研摩材およびその製造方法 |
JP4913409B2 (ja) * | 2003-09-12 | 2012-04-11 | 日立化成工業株式会社 | セリウム塩、その製造方法、酸化セリウム及びセリウム系研磨剤 |
DE112004002023B8 (de) * | 2003-10-22 | 2010-12-02 | Daiken Chemical Co. Ltd. | Film mit niedriger Dielektrizitätskonstante und Verfahren zur Herstellung desselben sowie elektronische Komponente mit dem Film |
KR100672940B1 (ko) | 2004-08-03 | 2007-01-24 | 삼성전자주식회사 | 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법 |
KR100603136B1 (ko) * | 2004-08-20 | 2006-07-20 | 테크노세미켐 주식회사 | 텅스텐막 연마용 cmp 조성물 |
TW200619368A (en) * | 2004-10-28 | 2006-06-16 | Nissan Chemical Ind Ltd | Polishing composition for silicon wafer |
JP4876215B2 (ja) * | 2005-01-21 | 2012-02-15 | 独立行政法人産業技術総合研究所 | Cmp研磨方法、cmp研磨装置、及び半導体デバイスの製造方法 |
DE102005017372A1 (de) | 2005-04-14 | 2006-10-19 | Degussa Ag | Wässrige Ceroxiddispersion |
US20090056231A1 (en) * | 2007-08-28 | 2009-03-05 | Daniela White | Copper CMP composition containing ionic polyelectrolyte and method |
JP5108134B1 (ja) * | 2011-05-20 | 2012-12-26 | 株式会社オハラ | 情報記録媒体用基板の製造方法 |
KR101726486B1 (ko) | 2012-05-30 | 2017-04-26 | 주식회사 쿠라레 | 화학 기계 연마용 슬러리 및 화학 기계 연마 방법 |
JP6016301B2 (ja) | 2013-02-13 | 2016-10-26 | 昭和電工株式会社 | 単結晶SiC基板の表面加工方法、その製造方法及び単結晶SiC基板の表面加工用研削プレート |
KR101464881B1 (ko) * | 2013-06-10 | 2014-11-25 | 오씨아이 주식회사 | 금속 제거용 킬레이트제를 포함하는 웨이퍼 세정용 알칼리 수용액 |
CN106115612B (zh) * | 2016-07-11 | 2017-11-17 | 中国电子科技集团公司第四十五研究所 | 一种晶圆平坦化方法 |
KR102429708B1 (ko) * | 2020-08-05 | 2022-08-05 | 주식회사 아이에스티이 | 기판 폴리싱을 위한 세륨옥사이드-징크옥사이드 합금 연마입자 및 그 제조방법 |
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SU1347428A1 (ru) * | 1985-07-26 | 1991-06-07 | Предприятие П/Я Х-5476 | Суспензи дл обработки стекл нных изделий |
JPH0770553A (ja) * | 1993-09-01 | 1995-03-14 | Asahi Glass Co Ltd | 研磨液及び基体の研磨方法 |
US5904159A (en) * | 1995-11-10 | 1999-05-18 | Tokuyama Corporation | Polishing slurries and a process for the production thereof |
JPH10102040A (ja) * | 1996-09-30 | 1998-04-21 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
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US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
JPH10309660A (ja) * | 1997-05-07 | 1998-11-24 | Tokuyama Corp | 仕上げ研磨剤 |
JPH1121545A (ja) * | 1997-06-30 | 1999-01-26 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
JPH11181403A (ja) * | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
JP3672493B2 (ja) * | 1998-02-24 | 2005-07-20 | 昭和電工株式会社 | 半導体装置研磨用研磨材組成物及びそれを用いた半導体装置の製造方法 |
JP3560484B2 (ja) * | 1998-08-05 | 2004-09-02 | 昭和電工株式会社 | Lsiデバイス研磨用研磨材組成物及び研磨方法 |
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EP1274123A4 (en) | 2007-03-07 |
EP1274123A1 (en) | 2003-01-08 |
WO2001080296A1 (fr) | 2001-10-25 |
KR100863088B1 (ko) | 2008-10-13 |
AU4875601A (en) | 2001-10-30 |
TW586157B (en) | 2004-05-01 |
KR100826725B1 (ko) | 2008-04-30 |
KR20020026877A (ko) | 2002-04-12 |
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