JP6921527B2 - 研磨装置 - Google Patents
研磨装置 Download PDFInfo
- Publication number
- JP6921527B2 JP6921527B2 JP2016254114A JP2016254114A JP6921527B2 JP 6921527 B2 JP6921527 B2 JP 6921527B2 JP 2016254114 A JP2016254114 A JP 2016254114A JP 2016254114 A JP2016254114 A JP 2016254114A JP 6921527 B2 JP6921527 B2 JP 6921527B2
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- JP
- Japan
- Prior art keywords
- load
- polishing
- drive mechanism
- head
- polished
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims description 141
- 230000007246 mechanism Effects 0.000 claims description 75
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
換言すれば、駆動機構24によるヘッド30位置の検出の分解能に対する、荷重の検出の分解能を大幅に向上させることができる。
11 スピンドル
12 研磨パッド
20 装置本体
21 コラム
21a コラムの一側面
22 アーム
23 ベース
23a ベースの上面
30 ヘッド
31 研磨体支持部材
31a フランジ部
32 弾性機構
32a 加圧スプリング
32b、32c バランス用スプリング
33 ロードセル
35 カバー
50 制御装置
51 検出部
52 記憶部
53 判定部
54 圧力評価部
60 テーブル
60a 載置面
61 支持ブロック
62 突条
70 ベッド
71 平行溝
100 研磨装置
W ウェハ
Claims (4)
- 被研磨材を保持する保持部と、
前記保持部に保持された被研磨材を研磨する研磨体と、
弾性機構を介して前記研磨体を支持するヘッドと、
前記ヘッドをZ座標方向に移動させる駆動機構と、
前記駆動機構に接続され、前記駆動機構を制御する制御部とを備え、
前記ヘッドに、前記研磨体に加わる荷重を測定する荷重測定装置が取り付けられ、
前記荷重測定装置は、前記弾性機構を介して前記研磨体に連結され、
前記制御部は、前記駆動機構によって前記ヘッドを下降させる際、はじめに位置制御によって前記駆動機構を制御し、目標荷重時のZ座標となる位置よりも手前の、目標荷重に対する荷重のオーバーシュートを抑制可能な予め求めた位置から荷重制御に切り換えて、前記駆動機構を制御する
ことを特徴とする研磨装置。 - 前記手前の、オーバーシュートを抑制可能な位置は、目標荷重が達成されるまで位置制御を行ったとした場合のオーバーシュート量に基づき算出されることを特徴とする請求項1に記載の研磨装置。
- 前記弾性機構は、コイルバネを有していることを特徴とする請求項1または2に記載の研磨装置。
- 被研磨材を保持する保持部と、
前記保持部に保持された被研磨材を研磨する研磨体と、
弾性機構を介して前記研磨体を支持するヘッドと、
前記ヘッドをZ座標方向に移動させる駆動機構と、
前記駆動機構に接続され、前記駆動機構を制御する制御部とを備え、
前記制御部は、前記駆動機構によって前記ヘッドを下降させる際、はじめに位置制御によって前記駆動機構を制御し、目標荷重時のZ座標となる位置よりも手前の位置の、目標荷重に対する荷重のオーバーシュートを抑制可能な予め求めた位置から荷重制御に切り換えて、前記駆動機構を制御することを特徴とする研磨装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/422,646 US10363647B2 (en) | 2016-02-05 | 2017-02-02 | Grinding tool |
KR1020170015604A KR101985585B1 (ko) | 2016-02-05 | 2017-02-03 | 연마 장치 |
TW106103734A TWI623379B (zh) | 2016-02-05 | 2017-02-03 | Grinding device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016021312 | 2016-02-05 | ||
JP2016021312 | 2016-02-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017140693A JP2017140693A (ja) | 2017-08-17 |
JP6921527B2 true JP6921527B2 (ja) | 2021-08-18 |
Family
ID=59628244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016254114A Active JP6921527B2 (ja) | 2016-02-05 | 2016-12-27 | 研磨装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6921527B2 (ja) |
KR (1) | KR101985585B1 (ja) |
TW (1) | TWI623379B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102011077B1 (ko) * | 2019-03-08 | 2019-08-14 | (주)성현 테크놀로지 | 반도체 슈라우드 링의 슬롯 가공방법 |
TWI765726B (zh) * | 2021-05-28 | 2022-05-21 | 大量科技股份有限公司 | 拋光系統及其修整裝置 |
CN115476253B (zh) * | 2022-08-12 | 2024-05-24 | 鸿富锦精密电子(成都)有限公司 | 抛光装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1312742C (zh) * | 1999-03-30 | 2007-04-25 | 株式会社尼康 | 抛光垫、抛光机及制造半导体器件的方法 |
KR100356440B1 (ko) * | 1999-12-07 | 2002-10-19 | 사단법인 고등기술연구원 연구조합 | 연마기 |
JP2003229388A (ja) | 2002-02-01 | 2003-08-15 | Nikon Corp | 研磨装置、研磨方法、半導体デバイス及び半導体デバイス製造方法 |
JP2004327774A (ja) | 2003-04-25 | 2004-11-18 | Nikon Corp | 研磨装置、これを用いた半導体デバイス製造方法およびこの方法により製造される半導体デバイス |
JP5113422B2 (ja) * | 2007-05-23 | 2013-01-09 | 富士精工株式会社 | 押圧力検出装置付ローラバニシング装置 |
JP5434094B2 (ja) | 2009-01-27 | 2014-03-05 | 株式会社ニコン | 研磨装置 |
JP5306065B2 (ja) * | 2009-06-04 | 2013-10-02 | 株式会社荏原製作所 | ドレッシング装置およびドレッシング方法 |
JP2013233651A (ja) * | 2013-08-19 | 2013-11-21 | Nikon Corp | 研磨装置の押圧力検出装置 |
-
2016
- 2016-12-27 JP JP2016254114A patent/JP6921527B2/ja active Active
-
2017
- 2017-02-03 KR KR1020170015604A patent/KR101985585B1/ko active IP Right Grant
- 2017-02-03 TW TW106103734A patent/TWI623379B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201741071A (zh) | 2017-12-01 |
JP2017140693A (ja) | 2017-08-17 |
TWI623379B (zh) | 2018-05-11 |
KR101985585B1 (ko) | 2019-06-03 |
KR20170093733A (ko) | 2017-08-16 |
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