CN109475997A - 用于化学机械抛光的保持环 - Google Patents

用于化学机械抛光的保持环 Download PDF

Info

Publication number
CN109475997A
CN109475997A CN201780045515.5A CN201780045515A CN109475997A CN 109475997 A CN109475997 A CN 109475997A CN 201780045515 A CN201780045515 A CN 201780045515A CN 109475997 A CN109475997 A CN 109475997A
Authority
CN
China
Prior art keywords
retaining ring
channel
interior surface
substrate
interior
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201780045515.5A
Other languages
English (en)
Other versions
CN109475997B (zh
Inventor
安德鲁·J·纳甘盖斯特
克里斯托弗·兴-均·李
托马斯·李
阿南德·N·伊耶
刁杰
焕波·张
埃里克·S·罗丹姆
李魏成
吴正勋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN202111356443.0A priority Critical patent/CN113997194B/zh
Publication of CN109475997A publication Critical patent/CN109475997A/zh
Application granted granted Critical
Publication of CN109475997B publication Critical patent/CN109475997B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • B24B37/32Retaining rings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Abstract

一种保持环,包括大致环形主体,所述大致环形主体具有内部表面和底部表面,所述内部表面用于束缚基板,所述底部表面具有多个通道和多个岛状部,多个通道从外部表面延伸至内部表面,并且多个岛状部由通道分开且提供接触面积以接触抛光垫,其中接触面积是底部表面的平面面积的约15%‑40%。

Description

用于化学机械抛光的保持环
技术领域
本公开内容涉及一种用于化学机械抛光的承载头的保持环。
背景技术
通常通过相继沉积导电层、半导体层或绝缘层而在基板上形成集成电路(特别是硅晶片)。一个制造步骤包括在非平面表面上沉积填料层并且平面化所述填料层。对于某些应用,平面化填料层直到暴露出图案化层的顶部表面。举例而言,可在图案化的绝缘层上沉积导电填料层,以填充绝缘层中的沟槽或孔洞。在平面化之后,在绝缘层的高起的(raised)图案之间留下的导电层部分形成过孔、插头(plug)和导线,过孔、插头和导线在基板上于薄膜电路之间提供导电路径。对于诸如氧化物抛光的其他应用,平面化填料层直到在非平面表面上留下预定的厚度。此外,光刻通常要求对基板表面的平面化。
化学机械抛光(CMP)是一种可接受的平面化的方法。此平面化方法通常需要将基板安装于承载头上。基板的暴露表面通常放置成对着旋转抛光垫。承载头在基板上提供可控制的负载,以对着抛光垫推压承载头。通常将诸如具有研磨颗粒的浆料的抛光液体供应至抛光垫的表面。
通常由保持环将基板保持在承载头下方。然而,因为保持环接触抛光垫,所以保持环容易磨损并且间或替换保持环。某些保持环具有由金属形成的上部部分和由耐磨塑料形成的下部部分,而某些其他保持环是单一塑料部分。
发明内容
在一个方面中,一种保持环,包括:大致环形主体,具有内部表面及底部表面,所述内部表面用于束缚基板,所述底部表面具有多个通道和多个岛状部,多个通道从外部表面延伸至内部表面,多个岛状部由通道分开并且提供接触面积以接触抛光垫,其中接触面积为底部表面约15%-40%的平面面积。
实施方式可包括以下特征中的一个或多个。
接触面积可以是底部表面的平面面积的约25%-30%。
多个通道在环形主体四周可均匀地间隔开。可具有八个至三十个通道。
多个通道的每个通道可包括:位于外部表面处的入口部分、大体上垂直于保持环的宽度而延伸的收缩部和从收缩部延伸至内部表面的出口部分。出口部分可朝向内部表面加宽。入口部分在周向上可比出口部分长。
多个通道的每个通道可包括前缘(leading edge)和后缘(trailing edge),并且前缘和后缘不需要跨通道的中心线上对称。前缘可包括线性区段,线性区段跨底部表面的大体上整个径向宽度延伸。线性区段可相对于径向方向以约30度至60度的角度定向。后缘可包括第一部分和比内部部分更靠近外部表面的第二部分,第一部分大体上沿着径向方向延伸,并且第二部分大体上垂直于第一部分而延伸。
通道可包括相邻于外部表面的凹槽区域,使得通道在凹槽区域中比在通道的其余处中深。凹槽区域和通道的其余处可各具有大体上均匀的深度。
优点可包括以下的一项或多项。可减小垫回弹效应,因此在基板边缘处提供抛光速率的更好控制,并且特别地在基板边缘处(例如,基板的最外5mm处)提供改善的抛光均匀度。
在附图和以下说明书中阐明一个或多个实施方式的细节。其他方面、特征和优点将从说明书和附图,和从权利要求书而显而易见。
附图说明
图1是承载头的示意性横截面图。
图2是保持环的立体图。
图3是保持环的示意性仰视图。
相同的参考符号在各图中代表相同的元件。
具体实施方式
保持环可用于基板四周区域中按压在抛光垫的表面上。具体而言,需要以足够的力按压保持环,使得基板不会意外地滑动于环的下方,并且有效地拦住基板。保持环也可用于在基板的边缘附近挤压抛光垫,并且因此影响基板边缘处的抛光速率。然而,当以此方式挤压垫时,抛光垫的弹性连同垫与保持环之间的相对运动可能导致“垫回弹效应”,这可能增加径向不均匀度。
可使用两种技术以减小垫回弹效应。第一,通过减少保持环对着抛光垫的接触面积,较少的垫受到挤压,因此较少的基板遭受垫回弹效应。第二,某些形状的接触面积较不易于产生垫回弹效应。
在抛光操作期间,可通过包括承载头100的化学机械抛光(CMP)装置抛光一个或多个基板。CMP装置的说明可在美国专利第5,738,574号中找到。
参照图1,示例性简化的承载头100包括底座(base)102、提供用于基板的安装表面的柔性膜104、介于膜104与底座102之间的可加压腔室106、和固定于底座102的边缘附近以保持基板于膜104下方的保持环110。尽管图1将膜104图示为被夹在保持环110与底座102之间,可使用诸如夹环的一个或多个其他零件以保持膜104。可提供驱动轴120以跨抛光垫旋转和/或平移承载头。泵可通过底座中的通路108流体连接至腔室106,以控制腔室106中的压力,并且因此控制基板上柔性膜104的向下压力。
保持环110可以是例如由螺钉或螺栓136而固定于底座102的外部边缘处的大致环形的环,所述螺钉或螺栓136延伸穿过底座102中的通路138而到保持环110的上部表面112中的对准的螺纹接收凹槽中。在某些实施方式中,驱动轴120可上升和下降,以控制在抛光垫上保持环110的底部表面114的压力。或者,保持环110可以是相对于底座120可移动的,并且承载头100可包括可加压以控制保持环上的向下压力的内部腔室(例如,在美国专利第6,183,354号或第7,575,504号中的说明)。保持环110是作为单元能够从底座102(和承载头的其余部分)移除。在保持环110的情况下,这意味着在不拆解底座102或从承载头100移除底座102的情况下,在移除保持环110的同时,保持环110的上部部分142仍然固定至保持环的下部部分140。
保持环110的内部直径表面116连同柔性膜104的下部表面限定基板接收凹槽。保持环110避免基板逃脱所述基板接收凹槽。
保持环110可包括多个竖直堆叠的区块(section),包括具有可接触抛光垫的底部表面114的环状下部部分140,和连接至底座102的环状上部部分142。下部部分140可以利用粘着层144结合至上部部分142。
下部部分140是塑料,例如多酚硫化物(polyphenol sulfide;PPS)。下部部分140的塑料在CMP工艺中是化学惰性的。此外,下部部分140应足够有弹性,使得基板边缘对着保持环的接触不会造成基板破碎或断裂。另一方面,下部部分140应足够的坚固,以在来自抛光垫(在底部表面上)和基板(在内部表面上)的磨耗下具有足够的寿命。下部部分140的塑料可具有在肖氏D标度上约80-95的硬度计测量值。一般而言,下部部分140的材料的弹性模量可在约0.3-1.0x106psi的范围中。尽管下部部分可具有低的磨耗速率,下部部分140被逐渐磨损仍是可接受的,因为这看来避免基板边缘在内部表面116中切割出深槽。
下部部分140的塑料可以是(例如,由以下组成)聚苯硫醚(PPS)、聚芳醚酮(PAEK)、聚醚醚酮(PEEK)或聚醚酮酮(PEKK)。
保持环110的上部部分142可以是比下部部分140硬的材料,例如金属、陶瓷或更硬的塑料。粘着层144可用于将上部部分140固定至下部部分142,或上部部分140和下部部分142可利用螺钉(例如,延伸穿过上部部分140中的孔而至下部部分142中的接收螺纹凹槽或螺钉套中的螺钉)连接、压配合在一起、或通过声波成型(sonic molding)而接合。或者,不是具有下部部分和上部部分,而是整体保持环110可由相同的材料形成,例如,由如上所述的下部部分的塑料形成。
保持环的下部部分140的内部表面116可具有略微大于基板直径(例如,大于基板直径约1-2mm)的内部直径D,以适应基板装载系统的定位公差。保持环110可具有约半英寸的径向宽度。
图2和图3图示保持环110,其中底部表面114包括从内部直径表面116延伸至外部直径表面118的多个通道150。底部表面114还包括岛状部152,每对相邻的岛状部152由通道150的一个通道分开。每个通道150在平面仰视图中可具有与其他通道相同的形状;类似地,每个岛状部152可具有与其他岛状部相同的形状。
岛状部152提供底部表面140对着抛光垫的接触面积。岛状部152可提供底部表面的平面面积约15%-40%(例如,25%-30%)的接触面积。底部表面的平面面积可以π(RO 2–RI 2)计算,其中RO是环110的外部直径的半径而RI是环110的内部直径的半径。
通道150的侧壁可大体上垂直于岛状部152的表面,使得作为平面面积的部分的接触面积不随着保持环的磨耗而改变。通道150(和因此的岛状部152)可以均匀的间隔在周向上绕保持环110的定位。可具有八个至三十个通道150,例如,十八个通道。
每个通道150包括前缘160和后缘170。假设承载头(和因此的保持环)以逆时针方向旋转(从环的底侧观察,如箭头A所示),前缘160是右缘而后缘170是左缘(再次地,从环的底侧观察)。
前缘160可整体或大部分为线性区段162。线性部分172跨保持环110的底部表面114约90%-100%的径向宽度W而延伸。然而,前缘160与内部直径表面116或外部直径表面118相交的一个或多个角164可成圆形。在外部边缘118处,前缘160的线性区段可相对于穿过保持环110的中心的径向方向R具有角度α。角度α可介于30度与60度之间,例如45度。
后缘170包括大体上径向延伸(例如,在穿过保持环110的中心的方向中延伸)的线性部分172。从线性部分172的中心介于线性部分172与径向方向之间的角度可小于10度。线性部分172可跨保持环110的底部表面114约25%-75%的径向宽度W延伸。后缘170与内部直径表面116相交的角174可成圆形。
后缘170还包括在后面的方向中延伸(即远离通道150的前缘160延伸)的方位角延伸部分(azimuthally extending portion)176。方位角延伸部分176可以是线性区块,或可以是弯曲的,例如,与内部直径表面116和外部直径表面118同心。方位角延伸部分176可在外部直径表面118处跨岛状部152约50%-80%的周向长度延伸。
后缘170还包括将方位角延伸部分176连接至外部直径表面118的区块178。此区块178可以是U形的,并且从方位角延伸部分176弯曲至外部直径表面118。
从外侧向内,所得到的通道150在外部直径表面118处具有入口部分154、方位角延伸部分176对直通过的骤然收缩部156、和接着朝向内部直径表面116加宽的出口部分158。在外部直径表面118处的入口的周向长度L1可大于在内部直径表面116处的出口的周向长度L2。宽的入口部分154连同入口154的U形区块178可帮助从抛光垫“铲取(scoop)”浆料,并且引导浆料向内朝向基板。
可选地,可在通道180的入口部分154中形成凹槽180。也就是说,通道150在入口部分154比出口部分158深。凹槽180可具有均匀的深度,并且出口部分158也可具有均匀的深度。
已说明多个实施方式。然而,许多改变仍为可能的。举例而言,取代上述复杂的通道和岛状部形状,岛状部可以是简单的线性条状,而具有经选择的宽度以提供期望的接触面积的比例。举例而言,每个岛状部的前缘和后缘可由两个平行的线性区段提供。在内部直径表面和外部直径表面处的边缘可成圆形。因此,本发明的范围由所附的权利要求书限定。

Claims (15)

1.一种保持环,包含:
大致环形主体,具有内部表面和底部表面,所述内部表面用于束缚基板,所述底部表面具有多个通道和多个岛状部,所述多个通道从外部表面延伸至所述内部表面,并且所述多个岛状部由所述通道分开并且提供接触面积以接触抛光垫,其中所述接触面积是所述底部表面的平面面积的约15%-40%。
2.如权利要求1所述的保持环,其中所述接触面积是所述底部表面的所述平面面积的约25%-30%。
3.如权利要求1所述的保持环,其中所述多个通道绕所述环形主体均匀地间隔开。
4.如权利要求3所述的保持环,其中具有八个至三十个通道。
5.如权利要求1所述的保持环,其中所述多个通道的每个通道包含:位于所述外部表面处的入口部分、大体上垂直于所述保持环的宽度而延伸的收缩部和从所述收缩部延伸至所述内部表面的出口部分。
6.如权利要求4所述的保持环,其中所述出口部分朝向所述内部表面加宽。
7.如权利要求5所述的保持环,其中所述入口部分在周向上比所述出口部分长。
8.如权利要求1所述的保持环,其中所述多个通道的每个通道包含前缘和后缘,并且其中所述前缘和所述后缘不是跨所述通道的中心线对称的。
9.如权利要求8所述的保持环,其中所述前缘包含线性区段,所述线性区段跨所述底部表面的大体上整个径向宽度延伸。
10.如权利要求9所述的保持环,其中所述线性区段相对于径向方向以约30度至60度的角度定向。
11.如权利要求8所述的保持环,其中所述后缘包含第一部分和比内部部分更靠近所述外部表面的第二部分,所述第一部分大体上沿着径向方向延伸,并且所述第二部分大体上垂直于所述第一部分而延伸。
12.如权利要求1所述的保持环,其中所述通道包括相邻于所述外部表面的凹槽区域,使得所述通道在所述凹槽区域中比在所述通道的其余处深。
13.如权利要求12所述的保持环,其中所述凹槽区域和所述通道的所述其余处各具有大体上均匀的深度。
14.一种保持环,包含:
大致环形主体,具有内部表面和底部表面,所述内部表面用于束缚基板,所述底部表面具有多个通道和多个岛状部,所述多个通道从外部表面延伸至所述内部表面,并且所述多个岛状部由所述通道分开并且提供接触面积以接触抛光垫,其中所述多个通道的每个通道包含前缘和后缘,其中所述前缘包含第一线性区段,所述第一线性区段相对于径向方向具有第一角度,并且其中所述后缘包含第一部分和第二部分,所述第一部分大体上沿着径向方向延伸,所述第二部分比内部部分更靠近所述外部表面,所述第二部分大体上垂直于所述第一部分延伸。
15.一种承载头,包含:
底座;
弹性膜,所述弹性膜耦合至所述底座,所述弹性膜具有用于基板的安装表面;和
大致环形主体,所述大致环形主体耦合至所述底座,所述大致环形主体具有内部表面和底部表面,所述内部表面用于束缚所述基板,所述底部表面具有多个通道和多个岛状部,所述多个通道从外部表面延伸至所述内部表面,并且所述多个岛状部由所述通道分开并且提供接触面积以接触抛光垫,其中所述接触面积是所述底部表面的平面面积的约15%-40%。
CN201780045515.5A 2016-07-25 2017-07-24 用于化学机械抛光的保持环 Active CN109475997B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111356443.0A CN113997194B (zh) 2016-07-25 2017-07-24 用于化学机械抛光的保持环

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662366550P 2016-07-25 2016-07-25
US62/366,550 2016-07-25
PCT/US2017/043551 WO2018022520A2 (en) 2016-07-25 2017-07-24 Retaining ring for cmp

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202111356443.0A Division CN113997194B (zh) 2016-07-25 2017-07-24 用于化学机械抛光的保持环

Publications (2)

Publication Number Publication Date
CN109475997A true CN109475997A (zh) 2019-03-15
CN109475997B CN109475997B (zh) 2021-11-26

Family

ID=60989741

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202111356443.0A Active CN113997194B (zh) 2016-07-25 2017-07-24 用于化学机械抛光的保持环
CN201780045515.5A Active CN109475997B (zh) 2016-07-25 2017-07-24 用于化学机械抛光的保持环

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN202111356443.0A Active CN113997194B (zh) 2016-07-25 2017-07-24 用于化学机械抛光的保持环

Country Status (7)

Country Link
US (2) US10322492B2 (zh)
JP (2) JP7329438B2 (zh)
KR (2) KR102420066B1 (zh)
CN (2) CN113997194B (zh)
SG (1) SG11201900152SA (zh)
TW (3) TWI740989B (zh)
WO (1) WO2018022520A2 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111482893A (zh) * 2020-04-16 2020-08-04 华海清科股份有限公司 一种化学机械抛光保持环和化学机械抛光承载头
CN112548846A (zh) * 2019-09-25 2021-03-26 夏泰鑫半导体(青岛)有限公司 用于化学机械研磨之固定环
CN115151376A (zh) * 2020-07-08 2022-10-04 应用材料公司 多齿磁控保持环

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113997194B (zh) 2016-07-25 2024-04-05 应用材料公司 用于化学机械抛光的保持环
KR102622055B1 (ko) * 2018-11-20 2024-01-09 삼성전자주식회사 에지 링의 패드 부착 방법 및 장치
WO2022040459A1 (en) * 2020-08-21 2022-02-24 Applied Materials, Inc. Improved retaining ring design

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6527624B1 (en) * 1999-03-26 2003-03-04 Applied Materials, Inc. Carrier head for providing a polishing slurry
KR20050064316A (ko) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 화학적 기계적 연마장치의 리테이너링
US20060046621A1 (en) * 2004-08-31 2006-03-02 Tech Semiconductor Singapore Pte. Ltd. Retaining ring structure for edge control during chemical-mechanical polishing
CN1890054A (zh) * 2003-12-10 2007-01-03 应用材料公司 带有浆液输送槽的保持环
CN101778697A (zh) * 2007-07-19 2010-07-14 应用材料公司 具有成形轮廓的保持环
US20110151755A1 (en) * 2005-05-24 2011-06-23 Entegris, Inc. Cmp retaining ring
CN204183389U (zh) * 2014-09-26 2015-03-04 唐中维 适用于半导体晶圆研磨抛光用的固定环结构
US20150303070A1 (en) * 2014-04-22 2015-10-22 Applied Materials, Inc. Retaining Ring Having Inner Surfaces with Facets

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3085480B2 (ja) 1991-10-02 2000-09-11 セイコーエプソン株式会社 ホルモン徐放性コンタクトレンズ
TW295560B (en) * 1995-08-09 1997-01-11 Speedfan Corp Retaining ring for polishing device
US5695392A (en) * 1995-08-09 1997-12-09 Speedfam Corporation Polishing device with improved handling of fluid polishing media
US5738574A (en) 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
US6183354B1 (en) * 1996-11-08 2001-02-06 Applied Materials, Inc. Carrier head with a flexible membrane for a chemical mechanical polishing system
US6267643B1 (en) * 1999-08-03 2001-07-31 Taiwan Semiconductor Manufacturing Company, Ltd Slotted retaining ring for polishing head and method of using
JP3085480U (ja) * 2001-10-19 2002-05-10 弘沂 許 ウエハー維持リング
JP2004268194A (ja) 2003-03-07 2004-09-30 Seiko Epson Corp 研磨装置、研磨用ガイドリングおよび研磨用ガイドリングの磨耗判定方法
US6821192B1 (en) * 2003-09-19 2004-11-23 Applied Materials, Inc. Retaining ring for use in chemical mechanical polishing
US7520795B2 (en) * 2005-08-30 2009-04-21 Applied Materials, Inc. Grooved retaining ring
US7326105B2 (en) * 2005-08-31 2008-02-05 Micron Technology, Inc. Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces
US7575504B2 (en) 2006-11-22 2009-08-18 Applied Materials, Inc. Retaining ring, flexible membrane for applying load to a retaining ring, and retaining ring assembly
JP2008177248A (ja) * 2007-01-16 2008-07-31 Tokyo Seimitsu Co Ltd 研磨ヘッド用リテーナリング
KR101775464B1 (ko) * 2011-05-31 2017-09-07 삼성전자주식회사 화학 기계적 연마 장치의 리테이너 링
US20130035022A1 (en) * 2011-08-05 2013-02-07 Paik Young J Two-Part Plastic Retaining Ring
US20140224766A1 (en) * 2013-02-08 2014-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Groove Design for Retaining Ring
JP6403981B2 (ja) * 2013-11-13 2018-10-10 株式会社荏原製作所 基板保持装置、研磨装置、研磨方法、およびリテーナリング
JP2015123532A (ja) * 2013-12-26 2015-07-06 株式会社東芝 リテーナリング、研磨装置および研磨方法
US10500695B2 (en) * 2015-05-29 2019-12-10 Applied Materials, Inc. Retaining ring having inner surfaces with features
CN113997194B (zh) 2016-07-25 2024-04-05 应用材料公司 用于化学机械抛光的保持环

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6527624B1 (en) * 1999-03-26 2003-03-04 Applied Materials, Inc. Carrier head for providing a polishing slurry
CN1890054A (zh) * 2003-12-10 2007-01-03 应用材料公司 带有浆液输送槽的保持环
KR20050064316A (ko) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 화학적 기계적 연마장치의 리테이너링
US20060046621A1 (en) * 2004-08-31 2006-03-02 Tech Semiconductor Singapore Pte. Ltd. Retaining ring structure for edge control during chemical-mechanical polishing
US20110151755A1 (en) * 2005-05-24 2011-06-23 Entegris, Inc. Cmp retaining ring
CN101778697A (zh) * 2007-07-19 2010-07-14 应用材料公司 具有成形轮廓的保持环
US20150303070A1 (en) * 2014-04-22 2015-10-22 Applied Materials, Inc. Retaining Ring Having Inner Surfaces with Facets
CN204183389U (zh) * 2014-09-26 2015-03-04 唐中维 适用于半导体晶圆研磨抛光用的固定环结构

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112548846A (zh) * 2019-09-25 2021-03-26 夏泰鑫半导体(青岛)有限公司 用于化学机械研磨之固定环
US11717933B2 (en) 2019-09-25 2023-08-08 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Retaining ring for use in chemical mechanical polishing and CMP apparatus having the same
CN111482893A (zh) * 2020-04-16 2020-08-04 华海清科股份有限公司 一种化学机械抛光保持环和化学机械抛光承载头
CN115151376A (zh) * 2020-07-08 2022-10-04 应用材料公司 多齿磁控保持环

Also Published As

Publication number Publication date
CN113997194A (zh) 2022-02-01
US10322492B2 (en) 2019-06-18
TW202338965A (zh) 2023-10-01
US20180021918A1 (en) 2018-01-25
US11673226B2 (en) 2023-06-13
JP2019523146A (ja) 2019-08-22
KR20220101766A (ko) 2022-07-19
JP2023166383A (ja) 2023-11-21
KR102561746B1 (ko) 2023-07-28
US20190291238A1 (en) 2019-09-26
WO2018022520A2 (en) 2018-02-01
TW202200309A (zh) 2022-01-01
KR20190022915A (ko) 2019-03-06
CN109475997B (zh) 2021-11-26
TW201806698A (zh) 2018-03-01
SG11201900152SA (en) 2019-02-27
TWI740989B (zh) 2021-10-01
JP7329438B2 (ja) 2023-08-18
WO2018022520A3 (en) 2018-07-26
KR102420066B1 (ko) 2022-07-11
CN113997194B (zh) 2024-04-05
TWI818306B (zh) 2023-10-11

Similar Documents

Publication Publication Date Title
CN109475997A (zh) 用于化学机械抛光的保持环
US11682561B2 (en) Retaining ring having inner surfaces with facets
CN101778697B (zh) 具有成形轮廓的保持环
KR101327626B1 (ko) 오버레이된 일정한 면적의 나선형 홈을 갖는 cmp 패드
TWI295947B (en) Composite retaining ring
TWI568536B (zh) 具有互鎖特徵的兩件式扣環
EP3302877A1 (en) Retaining ring having inner surfaces with features
US9272387B2 (en) Carrier head with shims
TW202416372A (zh) 用於cmp的保持環
KR200442675Y1 (ko) 그루브를 구비한 지지 링

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant