TWI818306B - 用於cmp的保持環 - Google Patents
用於cmp的保持環 Download PDFInfo
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- TWI818306B TWI818306B TW110132023A TW110132023A TWI818306B TW I818306 B TWI818306 B TW I818306B TW 110132023 A TW110132023 A TW 110132023A TW 110132023 A TW110132023 A TW 110132023A TW I818306 B TWI818306 B TW I818306B
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- 238000005498 polishing Methods 0.000 claims abstract description 26
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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Abstract
一種保持環,包括大致環形主體,此大致環形主體具有用以束縛基板之內部表面及底部表面,底部表面具有複數個通道及複數個島狀部,複數個通道從外部表面延伸至內部表面,且複數個島狀部藉由通道分開且提供接觸面積以接觸拋光墊,其中接觸面積為底部表面約15%-40%的平面面積。
Description
本揭露案關於一種用於化學機械拋光之承載頭的保持環。
積體電路(特別是矽晶圓)通常藉由依序沉積導體層、半導體層或絕緣層而形成於基板上。一個製造步驟牽涉在非平坦表面上沉積填充層且平坦化此填充層。對於某些應用,平坦化填充層直到暴露出圖案化層的頂部表面。舉例而言,可在圖案化絕緣層上沉積導電填充層,以填充絕緣層中的溝槽或孔洞。在平坦化之後,介於絕緣層之浮現的圖案之間留下的導電層部分形成在基板上於薄膜電路之間提供導電路徑之貫孔、插頭及導線。對於諸如氧化拋光之其他應用,平坦化填充層直到在非平坦表面上留下預定的厚度。此外,基板表面之平坦化對光蝕刻而言常常為必須的。
化學機械拋光(CMP)為平坦化之一種可接受的方法。此平坦化方法通常需要將基板固定於承載頭上。基板的暴露表面通常放置成相對於旋轉拋光墊。承載頭在基板上提供可控制的負載,以將承載頭推擠抵靠拋光墊。諸如具有研磨顆粒之研漿的拋光液體通常供應至拋光墊的表面。
基板通常藉由保持環保持在承載頭下方。然而,因為保持環接觸拋光墊,所以保持環容易磨損且經常地需替換。某些保持環具有以金屬形成的上部部分及以可磨損塑膠形成的下部部分,而某些其他保持環為單一塑膠部件。
在一個態樣中,一種保持環,包括:大致環形主體,具有用以束縛基板之內部表面及底部表面,底部表面具有複數個通道及複數個島狀部,複數個通道從外部表面延伸至內部表面,且複數個島狀部藉由通道分開且提供接觸面積以接觸拋光墊,其中接觸面積為底部表面約15%-40%的平面面積。
實施例可包括一或更多以下特徵。
接觸面積可為底部表面約25%-30%的平面面積。
複數個通道在環形主體四周可均勻地間隔開。可具有八個至三十個通道。
複數個通道之各個通道可包括:位於外部表面處的入口部分、實質上垂直於保持環之寬度而延伸的收縮部、及從收縮部延伸至內部表面的出口部分。出口部分可朝向內部表面擴大。入口部分之圓周可比出口部分之圓周更長。
複數個通道之各個通道可包括前緣及後緣,且前緣及後緣在通道之中心線上並非對稱的。前緣可包括線性區段,線性區段實質上延伸在整個底部表面之徑向寬度上。線性區段相對於徑向方向可以約30度至60度之角度定向。後緣可包括第一部分及比內部部分更靠近外部表面之第二部分,第一部分實質上沿著徑向方向延伸,且第二部分實質上垂直於第一部分而延伸。
通道可包括鄰接於外部表面之凹槽區域,使得通道在凹槽區域比通道之其餘處更深。凹槽區域及通道之其餘處可分別具有實質上均勻的深度。
優點可包括以下一或更多者。可降低墊反彈效應,因此於基板邊緣處提供拋光速率較佳的控制,且特別在基板邊緣處(例如,基板的最外5 mm處)提供改良的拋光均勻度。
一或更多實施例之細節在隨附圖示及以下說明書中提出。其他態樣、特徵及優點將從說明書及圖式,且從申請專利範圍而為顯而易見的。
保持環可用以按壓在基板四周區域中拋光墊的表面上。具體而言,保持環需要以足夠的力量按壓,使得基板不會意外地滑動至環的下方,且有效地圈住基板。保持環亦可用以在基板的邊緣附近壓縮拋光墊,且因此於基板邊緣影響拋光速率。然而,當以此方式壓縮墊時,拋光墊之彈性與墊及保持環之間的相對運動連結,可能導致「墊反彈效應」,此舉可能增加徑向的非均勻度。
可使用兩種技術以降低墊反彈效應。第一者為減少保持環抵靠拋光墊之接觸面積,較少的墊受到壓縮,且因此較少的基板會遭受到墊反彈效應。第二者為某些形狀之接觸面積較不易於產生墊反彈效應。
在拋光操作期間,一或更多基板可藉由包括承載頭100之化學機械拋光(CMP)裝置進行拋光。CMP裝置之說明可在美國專利第5,738,574號中找到。
參照第1圖,範例簡化的承載頭100包括外殼102、提供用於基板之固定表面的彈性膜104、介於膜104及外殼102之間的可加壓腔室106、及鎖定於外殼102之邊緣附近以固持基板於膜104下方之保持環110。儘管第1圖圖示膜104被夾持於保持環110及底座102之間,諸如夾持環之一或更多其他部件可用以固持膜104。可提供驅動桿120以旋轉及/或平移承載頭橫跨拋光墊。幫浦可透過外殼中的通路108流體連接至腔室106,以控制腔室106中的壓力,且因此控制基板上彈性膜104之向下壓力。
保持環110可為例如藉由螺釘或螺栓136而鎖定於底座102之外部邊緣處之大致環形的環,該等螺釘或螺栓136延伸穿過底座102中的通路138而與保持環110之上部表面112中的螺紋接收凹槽對齊。在某些實施例中,驅動桿120可上升及下降,以控制在拋光墊上保持環110之底部表面114的壓力。或者,保持環110可相對於底座120移動,且承載頭100可包括可加壓以控制保持環上的向下壓力之內部腔室(例如,在美國專利第6,183,354號或第7,575,504號中的說明)。保持環110為可從底座102(及承載頭的其餘部分)移除的單元。在保持環110的情況下,此意味著當移除保持環110時,保持環110的上部部分142維持鎖定至保持環的下部部分140,而無須拆解底座102或從承載頭100移除底座102。
保持環110之內部直徑表面116與彈性膜104之下部表面連結而界定基板接收凹槽。保持環110避免基板逃脫此基板接收凹槽。
保持環110可包括多重直立堆疊的區塊,包括具有可接觸拋光墊之底部表面114的環狀下部部分140,及連接至底座104的環狀上部部分142。下部部分140可以黏著層144結合至上部部分142。
下部部分140為塑膠,例如多酚硫化物(PPS)。下部部分140的塑膠在CMP處理中為化學惰性的。此外,下部部分140應足夠有彈性,使得基板邊緣抵靠保持環之接觸不會造成基板破碎或斷裂。另一方面,下部部分140應足夠的堅固,以在來自拋光墊(在底部表面上)及基板(在內部表面上)的磨耗下具有足夠的壽命。下部部分140之塑膠可具有在蕭氏D刻度上約80-95的硬度計量測。一般而言,下部部分180之材料的彈性係數可在約0.3-1.0x106
psi的範圍中。儘管下部部分可具有低的磨耗速率,下部部分140被逐漸的磨損仍是可接受的,因為此舉顯然避免了基板邊緣在內部表面188中切割出深溝。
下部部分140的塑膠可為(例如,由以下組成)聚苯硫醚(PPS)、聚芳醚酮(PAEK)、聚醚醚酮(PEEK)或聚醚酮酮(PEKK)。
保持環110的上部部分142可為比下部部分140更硬的材料,例如金屬、陶瓷或更硬的塑膠。黏著層144可用以將上部部分140鎖定至下部部分142,或上部部分140及下部部分142可以螺釘(例如,延伸穿過上部部分140中的孔而至下部部分142中的接收螺紋凹槽或螺釘套中)、按壓接合、或藉由聲波成型之接合而連接。或者,取代下部部分及上部部分,整體保持環110可以相同的材料形成,例如,以上述之下部部分的塑膠形成。
保持環的下部部分140之內部表面116可具有些微大於基板直徑(例如,大於基板直徑約1-2 mm)之內部直徑D(見第2B圖),以便適應基板負載系統之定位誤差。保持環110可具有約半英吋之徑向寬度。
第2圖及第3圖圖示保持環110,其中底部表面114包括從內部直徑表面116延伸至外部直徑表面118之複數個通道150。底部表面114亦包括島狀部152,每一對鄰接的島狀部152藉由通道150之一者分開。各個通道150在平面底部視圖中可具有如其他通道相同的形狀;類似地,各個島狀部152可具有如其他島狀部相同的形狀。
島狀部152提供底部表面140抵靠拋光墊之接觸面積。島狀部152可提供底部表面的平面面積約15%-40%(例如,25%-30%)之接觸面積。底部表面之平面面積可以π(RO 2
–RI 2
)計算,其中RO
為環110之外部直徑的半徑且RI
為環110之內部直徑的半徑。
通道150的側壁可實質上垂直於島狀部152之表面,使得與平面面積成比例之接觸面積不會隨著保持環之磨耗而改變。通道150(且因此包括島狀部152)可以均勻的間隔在保持環110之四周環繞定位。可具有八個至三十個通道150,例如,十八個通道。
各個通道150包括前緣160及後緣170。假設承載頭(且因此包括保持環)以反時針方向旋轉(由環之底側檢視,以箭頭A顯示),前緣160為右緣且後緣170為左緣(再次地,由環之底側檢視)。
前緣160可整體或大部分為線性區段162。線性區段162可延伸橫跨保持環110之底部表面114約90%-100%的徑向寬度W。然而,前緣160與內部直徑表面116或外部直徑表面118相交的一或更多角落164可為圓弧的。於外部邊緣118處,前緣160的線性區段可相對於通過保持環110之中心的徑向方向R具有一角度a。角度a可介於30度及60度之間,例如45度。
後緣170包括實質上徑向延伸的線性部分172,例如,以通過保持環110之中心的方向延伸。介於線性部分172及從線性部分172之中心的徑向方向之間的角度可小於10度。線性部分172可延伸橫跨保持環110之底部表面114約25%-75%的徑向寬度W。後緣170與內部直徑表面116相交的角落174可為圓弧的。
後緣170亦包括以尾部方向延伸的方位角延伸部分(azimuthally extending portion)176,即,以遠離通道150之前緣160的方向延伸。方位角延伸部分176可為線性區塊,或可為彎曲的,例如,與內部直徑表面116及外部直徑表面118同心。方位角延伸部分176可於外部直徑表面118處延伸橫跨島狀部152約50%-80%的周長長度。
後緣170亦包括將方位角延伸部分176連接至外部直徑表面118的區塊178。此區塊178可為U形的,且從方位角延伸部分176彎曲至外部直徑表面118。
從外側向內檢視,所得到的通道150於外部直徑表面118處具有入口部分154、方位角延伸部分176橫跨切割的急遽收縮部156、及接著朝向內部直徑表面116擴大的出口部分158。於外部直徑表面118處的入口之周長L1可大於內部直徑表面116處的出口之周長L2。與入口154之U形區塊178連結之寬的入口部分154可幫助從拋光墊「鏟起(scoop)」研漿,且引導研漿向內朝向基板。
可選地,可在通道150之入口部分154中形成凹槽180。亦即,通道150在入口部分154比出口部分158更深。凹槽180可具有均勻的深度,且出口部分158亦可具有均勻的深度。
已說明數個實施例。然而,許多改變仍為可能的。舉例而言,取代上述複雜的通道及島狀部之形狀,島狀部可為單純的線性條狀,而具有經選擇的寬度以提供所欲接觸面積之比例。舉例而言,各個島狀部之前緣及後緣可藉由兩個平行的線性區段提供。於內部及外部直徑表面處之邊緣可為圓弧的。因此,本發明之範疇藉由隨附申請專利範圍界定。
100:承載頭
102:外殼
104:彈性膜
106:腔室
108:通路
110:保持環
112:上部表面
114:底部表面
116:內部直徑表面
118:外部直徑表面
120:驅動桿
136:螺釘或螺栓
138:通路
150:通道
152:島狀部
154:入口部分
156:收縮部
158:出口部分
160:前緣
162:線性區段
164:角落
170:後緣
172:線性部分
174:角落
176:方位角延伸部分
178:區塊
180:凹槽
第1圖為承載頭之概要剖面視圖。
第2圖為保持環之立體圖。
第3圖為保持環之概要底部視圖。
在各圖式中類似的元件符號代表類似的元件。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記)
無
110:保持環
114:底部表面
116:內部直徑表面
118:外部直徑表面
150:通道
152:島狀部
Claims (8)
- 一種保持環,包含:一大致環形主體,該大致環形主體具有用以束縛一基板之一內部表面、一外部表面、及一底部表面,該底部表面具有複數個通道及複數個島狀部,該複數個通道從該外部表面延伸至該內部表面,且該複數個島狀部藉由該等通道分開且提供一接觸面積以接觸一拋光墊,其中該複數個島狀部從該外部表面延伸到該內部表面,其中各通道包括鄰接於該外部表面的一凹槽區域,使得該通道在該凹槽區域比該通道之一其餘處更深,且該凹槽區域及該通道之該其餘處分別具有實質上均勻的深度。
- 如請求項1所述之保持環,其中該通道包括鄰接於該外部表面的一入口部分、鄰接於該內部表面的一出口部分、及在該入口部分與該出口部分之間的一收縮部。
- 如請求項2所述之保持環,其中該凹槽區域實質上填滿該入口部分直到該收縮部處。
- 如請求項2所述之保持環,其中該收縮部由該通道的一側壁所界定,該側壁實質上垂直於該保持環的寬度而延伸。
- 如請求項2所述之保持環,其中該出口部 分朝向該內部表面擴大。
- 如請求項5所述之保持環,其中該入口部分在周長上比該出口部分更長。
- 如請求項1所述之保持環,其中該複數個通道在該環形主體四周均勻地間隔開。
- 如請求項7所述之保持環,其中有八個至三十個通道。
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TW112147427A TW202416372A (zh) | 2016-07-25 | 2017-07-25 | 用於cmp的保持環 |
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JP (2) | JP7329438B2 (zh) |
KR (2) | KR102561746B1 (zh) |
CN (2) | CN113997194B (zh) |
SG (1) | SG11201900152SA (zh) |
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CN113997194B (zh) | 2016-07-25 | 2024-04-05 | 应用材料公司 | 用于化学机械抛光的保持环 |
KR102622055B1 (ko) * | 2018-11-20 | 2024-01-09 | 삼성전자주식회사 | 에지 링의 패드 부착 방법 및 장치 |
CN113573844B (zh) * | 2019-02-28 | 2023-12-08 | 应用材料公司 | 用于化学机械抛光承载头的固定器 |
CN112548846B (zh) * | 2019-09-25 | 2022-10-28 | 夏泰鑫半导体(青岛)有限公司 | 用于化学机械研磨之固定环 |
CN111482893A (zh) * | 2020-04-16 | 2020-08-04 | 华海清科股份有限公司 | 一种化学机械抛光保持环和化学机械抛光承载头 |
KR20220116322A (ko) * | 2020-07-08 | 2022-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 다치형, 자기 제어 리테이닝 링 |
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TWI740989B (zh) | 2021-10-01 |
KR102420066B1 (ko) | 2022-07-11 |
WO2018022520A3 (en) | 2018-07-26 |
TW202200309A (zh) | 2022-01-01 |
SG11201900152SA (en) | 2019-02-27 |
CN109475997B (zh) | 2021-11-26 |
JP2019523146A (ja) | 2019-08-22 |
KR102561746B1 (ko) | 2023-07-28 |
US20190291238A1 (en) | 2019-09-26 |
US20180021918A1 (en) | 2018-01-25 |
US11673226B2 (en) | 2023-06-13 |
TW201806698A (zh) | 2018-03-01 |
TW202338965A (zh) | 2023-10-01 |
WO2018022520A2 (en) | 2018-02-01 |
CN113997194A (zh) | 2022-02-01 |
KR20190022915A (ko) | 2019-03-06 |
CN109475997A (zh) | 2019-03-15 |
TWI845333B (zh) | 2024-06-11 |
CN113997194B (zh) | 2024-04-05 |
JP2023166383A (ja) | 2023-11-21 |
US10322492B2 (en) | 2019-06-18 |
TW202416372A (zh) | 2024-04-16 |
KR20220101766A (ko) | 2022-07-19 |
JP7329438B2 (ja) | 2023-08-18 |
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