CN109119377A - 具有uv透射窗的uv可擦除存储器组件及其制造方法 - Google Patents

具有uv透射窗的uv可擦除存储器组件及其制造方法 Download PDF

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CN109119377A
CN109119377A CN201710737673.9A CN201710737673A CN109119377A CN 109119377 A CN109119377 A CN 109119377A CN 201710737673 A CN201710737673 A CN 201710737673A CN 109119377 A CN109119377 A CN 109119377A
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ultraviolet
transmission window
memory device
erasable memory
dielectric layer
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苏婷婷
陈冠勋
罗明山
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eMemory Technology Inc
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eMemory Technology Inc
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Abstract

本发明公开了一种具紫外线透射窗的紫外线可擦除存储器装置，包含：一衬底；二个P型金氧半晶体管，彼此串接在一起，设于所述衬底上；一层间介电层，覆盖所述二个P型金氧半晶体管；一第一金属间介电层，设于所述层间介电层上；一中间层，设于所述第一金属间介电层上；一紫外线透射窗，设于所述中间层内；以及一第二金属间介电层，设于所述第一金属间介电层及所述紫外线透射窗内。

Description

具有UV透射窗的UV可擦除存储器组件及其制造方法
技术领域
本发明涉及一种非易失性存储单元(non-volatile memory)，更具体地说，本发明是有关于一种能够提高紫外线(UV)擦除效率的单层多晶硅(single-poly)一次编程(OTP)存储单元。
背景技术
多元化市场及应用的需求驱使嵌入式逻辑非易失性存储器(逻辑非易失性存储器)朝各种不同的功能发展。周知的逻辑非易失性存储器之一是单层多晶硅非易失性存储器或单层多晶硅一次编程(OTP)存储器技术，与互补式金氧半导体场效晶体管工艺完全兼容，广泛应用于各种芯片设计中用于数据贮存。
通常，单层多晶硅OTP存储单元包括两个串联的晶体管，其中第一个晶体管是作为一选择晶体管，第二个晶体管的栅极是作为一浮置栅极。单层多晶硅OTP存储单元通常由对紫外线(UV)透明的介电材料覆盖。
已知，将热载子(电子)注入到单层多晶硅浮动栅极中的状态被称为“编程”状态，并且在所述状态下数据得以被贮存，相反的，电子未被注入到单层多晶硅浮动栅极中称为“擦除”状态，数据在此状态下被清除。上述单层多晶硅OTP存储单元可以被UV擦除。
发明内容
本发明的一主要目的在提供具有改善的UV擦除效率的UV可擦除存储器组件。
本发明的另一个目的在提供一种制造具有UV透射窗的UV可擦除存储器组件的方法。
根据本发明一实施例，披露一种具紫外线透射窗的紫外线可擦除存储器装置的制造方法，包含：提供一衬底；于所述衬底上形成串接在一起的二个P型金氧半晶体管；沉积一层间介电层，覆盖所述二个P型金氧半晶体管；于所述层间介电层上沉积一第一金属间介电层；于所述第一金属间介电层上沉积一中间层；于所述中间层内形成一紫外线透射窗；以及于所述第一金属间介电层及所述紫外线透射窗内沉积一第二金属间介电层。
根据本发明一实施例，所述二个P型金氧半晶体管包含一选择晶体管及一浮置栅极晶体管。所述浮置栅极晶体管包含一多晶硅栅极，用以贮存电荷。所述紫外线透射窗是设于所述多晶硅栅极正上方。
根据本发明一实施例，披露一种具紫外线透射窗的紫外线可擦除存储器装置，包含：一衬底；二个P型金氧半晶体管，彼此串接在一起，设于所述衬底上；一层间介电层，覆盖所述二个P型金氧半晶体管；一第一金属间介电层，设于所述层间介电层上；一中间层，设于所述第一金属间介电层上；一紫外线透射窗，设于所述中间层内；以及一第二金属间介电层，设于所述第一金属间介电层及所述紫外线透射窗内。
为让本发明的上述目的、特征及优点能更明显易懂，下文优选实施方式，并配合附图，作详细说明如下。然而如下的优选实施方式与附图仅供参考与说明用，并非用来对本发明加以限制。
附图说明
附图提供对实施例的进一步理解，并且被并入并构成本说明书的一部分。附图用来例示部分实施例，并用于解释其原理。在所附附图中：
图1至图3是依据本发明一实施例所绘示的一种制造UV可擦除存储器组件的方法的剖面示意图。
应该注意的是，附图仅供例示说明。为方便说明及为求清楚，部分附图的相对尺寸及比例被放大或缩小。通常，相同的附图标记在各不同实施例中表示对应或相似特征。
其中，附图标记说明如下：
1 紫外线(UV)可擦除存储器组件
10 衬底
11 第一金氧半晶体管
12 第二金氧半晶体管
101 N型阱
103 掺杂区
103a 轻掺杂汲极(LDD)区域
105 掺杂区
105a 轻掺杂汲极(LDD)区域
105b 轻掺杂汲极(LDD)区域
107 掺杂区
107a 轻掺杂汲极(LDD)区域
111 多晶硅栅极
112 选择栅极介电层
113 间隙壁
121 多晶硅栅极
122 浮置栅极介电层
123 间隙壁
130 自对准硅化金属阻挡(SAB)层
131 硅化金属层
133 硅化金属层
135 硅化金属层
137 硅化金属层
210 接触蚀刻停止层(CESL)
220 层间介电(ILD)层
230 蚀刻停止层
240 第一金属间介电(IMD)层
250 中间层
250a 凹陷沟槽
260 光刻胶图案
260a 开口
270 第二金属间介电层
300 UV透射窗
400 短波长辐射
VSG 选择栅极电压
VSL 源极线电压
VBL 位线电压
具体实施方式
在下文中，将参照附图说明细节，所述附图中的内容亦构成说明书细节描述的一部份，并且以可实行所述实施例的特例描述方式来绘示。下文实施例已描述足够的细节使所述领域的一般技术人员得以具以实施。
当然，亦可实行其他的实施例，或是在不悖离文中所述实施例的前提下作出任何结构性、逻辑性、及电性上的改变。因此，下文的细节描述不应被视为是限制，相反的，其中所包含的实施例将由随附的权利要求来加以界定。
本发明涉及一种紫外线(UV)可擦除存储器组件，例如具有改进的UV擦除性能的UV可擦除电可编程只读存储器(EPROM)组件或单层多晶硅一次编程(OTP)存储器组件。
请参阅图1至图3，其为依据本发明一实施例所绘示的一种具紫外线透射窗的紫外线(UV)可擦除存储器组件1的制造方法的剖面示意图。如图1所示，提供一衬底10。衬底10可以是一半导体衬底，例如硅衬底，但不限于此。举例来说，衬底10可以是一P型硅衬底，且一N型阱101可以设于衬底10的一记忆数组区内。
根据本发明一实施例，于衬底10上，设有二个金氧半(MOS)晶体管11及12，彼此串接在一起，其中第一MOS晶体管11是作为一选择晶体管，并且可以是一P型金氧半晶体管。第一MOS晶体管11的一多晶硅栅极111可以耦合至一选择栅极电压VSG。在多晶硅栅极111与衬底10之间，设有一选择栅极介电层112。第一MOS晶体管11另有一第一端点，例如一掺杂区103，可以耦合至一源极线电压VSL。其中，掺杂区103可以是一P+掺杂区。
第一MOS晶体管11另有一第二端点，例如一掺杂区105，可以耦合至一第二MOS晶体管12的一第一端点。换句话说，第一MOS晶体管11是透过共享的掺杂区105，串联至所述第二MOS晶体管12。其中，掺杂区105可以是一P+掺杂区。
在多晶硅栅极111的各个侧壁上，可以设置间隙壁113。轻掺杂汲极(LDD)区域103a和105a可以形成在N型阱101中并且分别直接设置在间隙壁113的正下方。LDD区域103a和105a可以是P型LDD区域。
第二MOS晶体管12的一第二端点，例如一掺杂区107，是耦合到一位线电压VBL。掺杂区107可以是一P+掺杂区域。第二MOS晶体管12是浮置栅极晶体管，并且可以是P型金氧半晶体管。第二MOS晶体管12的多晶硅栅极121是一用于电荷存储的浮置栅极。浮置栅极介电层122可以设置在多晶硅栅极121与衬底10之间。
同样的，在多晶硅栅极121的各个侧壁上，可以设置间隙壁123。轻掺杂汲极(LDD)区域105b和107a可以形成在N型阱101中并且分别直接设置在间隙壁123的正下方。LDD区域105b和107a可以是P型LDD区域。
可选地，可以进行一自对准硅化金属工艺，以在多晶硅栅极111上形成一硅化金属层131，在掺杂区103上形成一硅化金属层133，在掺杂区105上形成一硅化金属层135，以及在掺杂区107上的硅化金属层137。根据本发明一实施例，在多晶硅栅极121上不会形成硅化金属层，因为在上述自对准硅化金属过程中，多晶硅栅极121被自对准硅化金属阻挡(SAB)层130覆盖。
在形成硅化金属层131、133、135及137之后，接触蚀刻停止层(CESL)210共形沉积在衬底10上以覆盖硅化金属层131、133、135及137，第一MOS晶体管11与第二MOS晶体管12。根据本发明一实施例，接触蚀刻停止层210还覆盖自对准硅化金属阻挡层130，并且不与多晶硅栅极121直接接触。
在接触蚀刻停止层210沉积之后，将层间介电(ILD)层220沉积在接触蚀刻停止层210上。例如，层间介电层220可以包括BSG、BPSG或低介电常数介电材料。
尽管图中仅示出了单一层的层间介电层220，但是应当理解，层间介电层220可以包括多层的介电材料。接触组件(未示出)可以形成在层间介电层220中。
随后，诸如氮化硅层的蚀刻停止层230可以沉积在层间介电层220上。接着，可以在蚀刻停止层230上沉积一第一金属间介电(IMD)层240。第一金属间介电层240可以包括硅氧化物或低介电常数介电材料。接着，中间层250可以沉积在第一金属间介电层240上。根据本发明一实施例，中间层250可以是厚度范围在1500埃至2500埃之间的氮氧化硅层，例如2000埃。
由氮氧化硅组成的相对厚的中间层250对于铜大马士革镶嵌(copper dualdamascene)工艺是必要的，例如通孔优先(via-first)铜大马士革镶嵌工艺。然而，在UV擦除操作期间，这层由氮氧化硅组成的相对厚的中间层250会阻挡UV光，这降低了UV擦除的效率。
如图2所示，根据本发明一实施例，接着利用光刻工艺在中间层250上形成一光刻胶图案260。光刻胶图案260可以利用通常用于大马士革镶嵌工艺中的同一道掩模来定义，例如，用于在铜大马士革镶嵌工艺中定义通孔优先的通孔图案的掩模。因此，不需要额外的掩模。
光刻胶图案260包括与多晶硅栅极121对准并定位在其上的开口260a。接着进行一干蚀刻工艺经由开口260a蚀刻中间层250，从而形成穿过中间层250并且可以延伸到部分第一金属间介电层240中的凹陷沟槽250a。随后，去除光刻胶图案260。
借由去除多晶硅栅极121正上方的中间层250，形成一UV透射窗300。
如图3所示，在去除光刻胶图案260之后，在中间层250上沉积一第二金属间介电层270。凹陷沟槽250a被第二金属间介电层270完全填满。尽管未绘示于图中，应理解的是可以在存储器数组外的第一金属间介电层240、中间层250及第二金属间介电层270中形成一铜大马士革镶嵌结构。例如，铜大马士革镶嵌结构可以形成在一周边电路区域内(图未示)。
在UV擦除操作期间，UV可擦除存储器组件1暴露于短波长辐射400例如UV光。借由在金属间介电层之间设置UV透射窗300，UV擦除的效率可以显著提高。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (20)

1.一种具紫外线透射窗的紫外线可擦除存储器装置的制造方法，其特征在于，包含：
提供一衬底；
于所述衬底上形成串接在一起的二个金氧半晶体管；
沉积一层间介电层，覆盖所述二个金氧半晶体管；
于所述层间介电层上沉积一第一金属间介电层；
于所述第一金属间介电层上沉积一中间层；
于所述中间层内形成一紫外线透射窗；以及
于所述第一金属间介电层及所述紫外线透射窗内沉积一第二金属间介电层。
2.根据权利要求1所述的一种具紫外线透射窗的紫外线可擦除存储器装置的制造方法，其特征在于，其中所述二个金氧半晶体管包含一选择晶体管及一浮置栅极晶体管。
3.根据权利要求2所述的一种具紫外线透射窗的紫外线可擦除存储器装置的制造方法，其特征在于，其中所述浮置栅极晶体管包含一多晶硅栅极，用以贮存电荷。
4.根据权利要求3所述的一种具紫外线透射窗的紫外线可擦除存储器装置的制造方法，其特征在于，其中所述紫外线透射窗是形成在所述多晶硅栅极正上方。
5.根据权利要求1所述的一种具紫外线透射窗的紫外线可擦除存储器装置的制造方法，其特征在于，其中所述衬底是一P型硅衬底，具有一N型阱。
6.根据权利要求2所述的一种具紫外线透射窗的紫外线可擦除存储器装置的制造方法，其特征在于，其中另包含：
形成一自对准硅化金属阻挡层，覆盖所述多晶硅栅极。
7.根据权利要求6所述的一种具紫外线透射窗的紫外线可擦除存储器装置的制造方法，其特征在于，其中另包含：
于所述串接在一起的二个金氧半晶体管上及所述自对准硅化金属阻挡层上沉积一接触蚀刻停止层。
8.根据权利要求7所述的一种具紫外线透射窗的紫外线可擦除存储器装置的制造方法，其特征在于，其中所述层间介电层硅沉积在所述接触蚀刻停止层上。
9.根据权利要求第1项所述的一种具紫外线透射窗的紫外线可擦除存储器装置的制造方法，其特征在于，其中所述中间层是一氮氧化硅层。
10.根据权利要求1所述的一种具紫外线透射窗的紫外线可擦除存储器装置的制造方法，其特征在于，其中所述中间层的厚度介于1500埃至2500埃。
11.一种具紫外线透射窗的紫外线可擦除存储器装置，其特征在于，包含：
一衬底；
二个P型金氧半晶体管，彼此串接在一起，设于所述衬底上；
一层间介电层，覆盖所述二个P型金氧半晶体管；
一第一金属间介电层，设于所述层间介电层上；
一中间层，设于所述第一金属间介电层上；
一紫外线透射窗，设于所述中间层内；以及
一第二金属间介电层，设于所述第一金属间介电层及所述紫外线透射窗内。
12.根据权利要求11所述的一种具紫外线透射窗的紫外线可擦除存储器装置，其特征在于，其中所述二个P型金氧半晶体管包含一选择晶体管及一浮置栅极晶体管。
13.根据权利要求12所述的一种具紫外线透射窗的紫外线可擦除存储器装置，其特征在于，其中所述浮置栅极晶体管包含一多晶硅栅极，用以贮存电荷。
14.根据权利要求13所述的一种具紫外线透射窗的紫外线可擦除存储器装置，其特征在于，其中所述紫外线透射窗是设于所述多晶硅栅极正上方。
15.根据权利要求11所述的一种具紫外线透射窗的紫外线可擦除存储器装置，其特征在于，其中所述衬底是一P型硅衬底，具有一N型阱。
16.根据权利要求12所述的一种具紫外线透射窗的紫外线可擦除存储器装置，其特征在于，其中另包含：
一自对准硅化金属阻挡层，覆盖所述多晶硅栅极。
17.根据权利要求16所述的一种具紫外线透射窗的紫外线可擦除存储器装置，其特征在于，其中另包含：
一接触蚀刻停止层，设于所述二个P型金氧半晶体管上及所述自对准硅化金属阻挡层上。
18.根据权利要求17所述的一种具紫外线透射窗的紫外线可擦除存储器装置，其特征在于，其中所述层间介电层硅沉积在所述接触蚀刻停止层上。
19.根据权利要求11所述的一种具紫外线透射窗的紫外线可擦除存储器装置，其特征在于，其中所述中间层是一氮氧化硅层。
20.根据权利要求第11项所述的一种具紫外线透射窗的紫外线可擦除存储器装置，其特征在于，其中所述中间层的厚度介于1500埃至2500埃。
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