JP4967237B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP4967237B2 JP4967237B2 JP2005021942A JP2005021942A JP4967237B2 JP 4967237 B2 JP4967237 B2 JP 4967237B2 JP 2005021942 A JP2005021942 A JP 2005021942A JP 2005021942 A JP2005021942 A JP 2005021942A JP 4967237 B2 JP4967237 B2 JP 4967237B2
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- 238000003384 imaging method Methods 0.000 title claims description 74
- 239000004065 semiconductor Substances 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 56
- 230000004888 barrier function Effects 0.000 claims description 55
- 238000002955 isolation Methods 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 description 37
- 238000004519 manufacturing process Methods 0.000 description 29
- 238000005468 ion implantation Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 230000001133 acceleration Effects 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
以下、本発明の実施の形態1における固体撮像装置及び固体撮像装置の製造方法について、図1及び図2を参照しながら説明する。最初に、本実施の形態1における固体撮像装置の構成について図1を用いて説明する。図1は、本発明の実施の形態1における固体撮像装置の構成を概略的に示す断面図である。
次に、本発明の実施の形態2における固体撮像装置及び固体撮像装置の製造方法について、図3及び図4を参照しながら説明する。図3は、本発明の実施の形態2における固体撮像装置の構成を概略的に示す断面図である。
2 p型ウェル
3 チャンネル領域
4 水平転送電極
5 バリア領域
6、14 ドレイン領域
7 ゲート絶縁膜
8、24 絶縁層
9、30、31、32 コンタクト
10、33、34、35 アルミ配線
11 絶縁膜
12、15a、15b 浅い拡散領域
13、16a、16b 深い拡散領域
17a、17b、26a、26b MOSトランジスタの半導体領域
21 シリコン酸化膜
22 シリコン窒化膜
23 MOSトランジスタのゲート絶縁膜
25 レジストパターン
27、28 高濃度の半導体領域
29 MOSトランジスタのゲート電極
Claims (5)
- 半導体基板と、
前記半導体基板の主面に形成され、1次元状又は2次元状に配列された複数の受光部と、
前記半導体基板の主面に形成され、前記受光部から読み出した信号電荷を垂直方向に転送する垂直転送部と、
前記半導体基板の主面に形成され、前記垂直転送部によって転送された前記信号電荷を水平方向に転送する水平転送部と、
前記半導体基板の主面に形成され、前記垂直転送部とは反対側で、前記水平転送部に隣接し、前記水平転送部の余剰電荷のみが通過するように形成されたバリア領域と、
前記半導体基板の主面に形成された溝に絶縁膜を埋め込んで形成され、前記水平転送部とは反対側で、前記バリア領域とは間をあけて形成された溝型素子分離と、
前記半導体基板の主面に形成され、前記水平転送部とは反対側で、前記バリア領域に隣接し、前記バリア領域を通過した前記余剰電荷を排出するためのドレイン領域とを備え、
前記ドレイン領域は、その一部が前記溝型素子分離の下層に位置し、かつ、前記バリア領域と前記溝型素子分離とで挟まれた領域に位置していることを特徴とする固体撮像装置。 - 前記ドレイン領域は、前記溝型素子分離の下層に位置した部分の拡散層深さが、それ以外の部分の拡散層深さよりも深くなるように形成されている請求項1に記載の固体撮像装置。
- 前記水平転送部の上方にゲート絶縁膜を介して形成された水平転送電極を有し、前記水平転送電極は、前記ドレイン領域及び前記溝型素子分離と前記半導体基板の厚み方向において重なるように形成され、
前記水平転送電極への駆動電圧の印加は、前記ドレイン領域の前記溝型素子分離の下層に位置した部分と前記半導体基板の厚み方向において重なる位置で行われている請求項1または2に記載の固体撮像装置。 - 前記受光部、前記垂直転送部、前記水平転送部、前記バリア領域、前記ドレイン領域及び前記溝型素子分離が設けられた領域の周辺に、トランジスタ素子が形成され、
前記溝型素子分離が前記トランジスタ素子に対して素子分離として機能している請求項1から3のいずれかに記載の固体撮像装置。 - 前記半導体基板はn型シリコン基板にp型ウェルが形成されたものである請求項1〜4のいずれかに記載の固体撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005021942A JP4967237B2 (ja) | 2005-01-28 | 2005-01-28 | 固体撮像装置 |
US11/333,924 US7473944B2 (en) | 2005-01-28 | 2006-01-18 | Solid-state imaging device |
CNB2006100067401A CN100414710C (zh) | 2005-01-28 | 2006-01-27 | 固体摄像器件及其制造方法 |
US12/274,730 US7723145B2 (en) | 2005-01-28 | 2008-11-20 | Solid-state imaging device and manufacturing method for the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005021942A JP4967237B2 (ja) | 2005-01-28 | 2005-01-28 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006210716A JP2006210716A (ja) | 2006-08-10 |
JP4967237B2 true JP4967237B2 (ja) | 2012-07-04 |
Family
ID=36755598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005021942A Expired - Fee Related JP4967237B2 (ja) | 2005-01-28 | 2005-01-28 | 固体撮像装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7473944B2 (ja) |
JP (1) | JP4967237B2 (ja) |
CN (1) | CN100414710C (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100851757B1 (ko) * | 2007-05-03 | 2008-08-11 | 동부일렉트로닉스 주식회사 | 이미지센서 및 그 제조방법 |
JP2010034236A (ja) * | 2008-07-28 | 2010-02-12 | Panasonic Corp | 固体撮像装置及びその製造方法 |
US8772891B2 (en) * | 2008-12-10 | 2014-07-08 | Truesense Imaging, Inc. | Lateral overflow drain and channel stop regions in image sensors |
JP2010212319A (ja) * | 2009-03-09 | 2010-09-24 | Sony Corp | 固体撮像装置、電子機器および固体撮像装置の製造方法 |
JP5651928B2 (ja) * | 2009-05-11 | 2015-01-14 | ソニー株式会社 | 固体撮像素子、撮像装置 |
US8378398B2 (en) * | 2010-09-30 | 2013-02-19 | Omnivision Technologies, Inc. | Photodetector isolation in image sensors |
US9633734B1 (en) * | 2016-07-14 | 2017-04-25 | Ememory Technology Inc. | Driving circuit for non-volatile memory |
CN108258005B (zh) * | 2018-01-11 | 2021-11-16 | 中国电子科技集团公司第四十四研究所 | 一种具备快速泄放信号功能的ccd |
CN111326535A (zh) * | 2019-12-25 | 2020-06-23 | 中国电子科技集团公司第四十四研究所 | 一种大满阱低噪声的图像传感器结构及其制备方法 |
EP4131382A1 (de) * | 2021-08-02 | 2023-02-08 | Espros Photonics AG | Ladungsübertragungsvorrichtung mit einem mündungsbereich für taktfrequenzen ab 100 mhz |
EP4131383A1 (de) * | 2021-08-02 | 2023-02-08 | Espros Photonics AG | Ladungsübertragungsvorrichtung mit einem ausbuchtungsbereich für taktfrequenzen ab 100 mhz |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US5288651A (en) * | 1989-11-09 | 1994-02-22 | Kabushiki Kaisha Toshiba | Method of making semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD |
JP3162440B2 (ja) * | 1990-11-26 | 2001-04-25 | 松下電子工業株式会社 | 固体撮像装置の製造方法 |
JP3592772B2 (ja) * | 1994-12-19 | 2004-11-24 | 株式会社東芝 | 固体撮像装置 |
JP2812310B2 (ja) | 1996-07-30 | 1998-10-22 | 日本電気株式会社 | 固体撮像装置及びその製造方法 |
JP2845216B2 (ja) * | 1996-09-27 | 1999-01-13 | 日本電気株式会社 | 固体撮像装置およびその製造方法 |
JPH1126742A (ja) | 1997-06-30 | 1999-01-29 | Sony Corp | Ccd固体撮像素子 |
JP3024595B2 (ja) * | 1997-07-04 | 2000-03-21 | 日本電気株式会社 | 固体撮像装置およびその製造方法 |
JP4179719B2 (ja) * | 1999-10-07 | 2008-11-12 | 株式会社東芝 | 固体撮像装置 |
KR100332949B1 (ko) * | 2000-05-23 | 2002-04-20 | 윤종용 | 전자 줌 기능에 적합한 고체 촬상 소자 |
JP4515617B2 (ja) * | 2000-10-23 | 2010-08-04 | 富士フイルム株式会社 | 固体撮像素子およびその駆動方法 |
US6583061B2 (en) * | 2001-08-31 | 2003-06-24 | Eastman Kodak Company | Method for creating an anti-blooming structure in a charge coupled device |
US6624453B2 (en) * | 2001-08-31 | 2003-09-23 | Eastman Kodak Company | Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltage |
JP4123415B2 (ja) * | 2002-05-20 | 2008-07-23 | ソニー株式会社 | 固体撮像装置 |
JP4228887B2 (ja) * | 2003-04-02 | 2009-02-25 | ソニー株式会社 | 固体撮像素子およびその製造方法 |
JP3717170B2 (ja) | 2003-05-20 | 2005-11-16 | 松下電器産業株式会社 | 固体撮像装置の製造方法 |
US6794219B1 (en) * | 2003-07-28 | 2004-09-21 | Eastman Kodak Company | Method for creating a lateral overflow drain, anti-blooming structure in a charge coupled device |
JP4691990B2 (ja) * | 2005-01-05 | 2011-06-01 | ソニー株式会社 | 固体撮像装置及びその製造方法 |
WO2006106699A1 (en) * | 2005-03-31 | 2006-10-12 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method of solid-state imaging device |
-
2005
- 2005-01-28 JP JP2005021942A patent/JP4967237B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-18 US US11/333,924 patent/US7473944B2/en not_active Expired - Fee Related
- 2006-01-27 CN CNB2006100067401A patent/CN100414710C/zh not_active Expired - Fee Related
-
2008
- 2008-11-20 US US12/274,730 patent/US7723145B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20090075419A1 (en) | 2009-03-19 |
CN1819253A (zh) | 2006-08-16 |
JP2006210716A (ja) | 2006-08-10 |
US7473944B2 (en) | 2009-01-06 |
US7723145B2 (en) | 2010-05-25 |
CN100414710C (zh) | 2008-08-27 |
US20060170018A1 (en) | 2006-08-03 |
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