CN105453267B - 垂直铁电场效晶体管构造 - Google Patents

垂直铁电场效晶体管构造 Download PDF

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CN105453267B
CN105453267B CN201480044580.2A CN201480044580A CN105453267B CN 105453267 B CN105453267 B CN 105453267B CN 201480044580 A CN201480044580 A CN 201480044580A CN 105453267 B CN105453267 B CN 105453267B
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卡迈勒·M·考尔道
钱德拉·穆利
古尔特杰·S·桑胡
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Micron Technology Inc
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Abstract

本发明揭示一种包括隔离芯的垂直铁电场效晶体管构造。过渡金属二硫属化物材料围绕所述隔离芯且具有1个单层到7个单层的侧向壁厚度。铁电栅极电介质材料围绕所述过渡金属二硫属化物材料。导电栅极材料围绕所述铁电栅极电介质材料。所述过渡金属二硫属化物材料从所述导电栅极材料立面向内及立面向外延伸。导电接触件直接抵靠所述过渡金属二硫属化物材料的侧向外侧壁，所述过渡金属二硫属化物材料为：a)从所述导电栅极材料立面向内，或b)从所述导电栅极材料立面向外。本发明还揭示额外实施例。

Description

垂直铁电场效晶体管构造
技术领域
本文中所揭示的实施例涉及垂直铁电场效晶体管构造，涉及包括一对垂直铁电场效晶体管的构造，涉及铁电场效晶体管的垂直串，且涉及侧向相对的垂直铁电场效晶体管对的垂直串。
背景技术
存储器为一种类型的集成电路，且用于计算机系统以存储数据。存储器可制造于个别存储器单元的一或多个阵列中。可使用数字线(其也可称为位线、数据线、感测线或数据/感测线)及存取线(其也可称为字线)来写入或读取存储器单元。数字线可沿着阵列的列导电地互连存储器单元，及存取线可沿着阵列的行导电地互连存储器单元。可通过数字线及存取线的组合唯一地寻址每一存储器单元。
存储器单元可为易失性或非易失性。在许多情况中(包含关闭计算机时)非易失性存储器单元可存储数据达延长的时间周期。易失性存储器散逸且因此需要被刷新/重写，在许多情况中一秒内需要被多次刷新/重写。无论如何，存储器单元经配置而以至少两个不同可选状态保持或存储存储器。在二进制系统中，所述状态被视为“0”或“1”。在其它系统中，至少一些个别存储器单元可经配置以存储两个以上的信息电平或状态。
场效晶体管为可用于存储器单元中的一种类型的电子组件。这些晶体管包括一对导电源极/漏极区域，在所述对导电源极/漏极区域之间具有半导电沟道区域。导电栅极相邻于所述沟道区域且通过薄栅极电介质与所述沟道区域分离。施加适当电压到栅极允许电流从所述源极/漏极区域中的一者通过所述沟道区域流动到另一者。当从栅极移除所述电压时，很大程度地防止电流流过所述沟道区域。场效晶体管还可包含额外结构(例如可逆地编程的电荷存储区域)作为栅极构造的部分。除场效晶体管外的其它晶体管(例如双极晶体管)，可额外地或替代地用于存储器单元中。晶体管可用于许多类型的存储器中。此外，晶体管可用于及形成于除存储器之外的阵列中。
一种类型的晶体管为铁电场效晶体管(FeFET)，其中栅极电介质是铁电。针对所选择的操作栅极电压，通过施加可编程栅极电压对准的铁电的极化修改源极与漏极之间半导电沟道的导电性。适当正编程电压沿着所述半导电沟道引导所述极化。铁电的此极化导致正表层电荷更接近沟道及负表层电荷更接近栅极。当考虑p-型半导体半导电时，发生电子在界面处的积累以补偿此铁电电荷。借此产生低电阻率沟道。当将所述极化切换到其另一稳定状态时，对准铁电极化使得负表层电荷更接近沟道且接近栅极电介质的半导电沟道中的电子被耗尽。这导致高电阻率。对高及低导电性(由铁电极化状态调用)的偏好在移除编程栅极电压(至少一次)之后仍存在。可通过施加并不干扰铁电极化的小漏极电压来读取沟道的状态。
然而，FeFET可不受控地变得去极化且因此丢失程序状态。此外，极高电场可存在于介于铁电电介质材料与沟道之间的典型薄氧化物之间，从而引起操作中的可靠性问题。
附图说明
图1为根据本发明的实施例的衬底片段的图解横截面图。
图2为通过图1中的线2-2取得的横截面图。
图3为通过图1中的线3-3取得的横截面图。
图4为通过图1中的线4-4取得的横截面图。
图5为根据本发明的实施例的衬底片段的图解横截面图，且为图1所展示的衬底片段的替代。
图6为根据本发明的实施例的衬底片段的图解横截面图，且为图1所展示的衬底片段的替代。
图7为通过图6中的线7-7取得的横截面图。
图8为通过图6中的线8-8取得的横截面图。
图9为通过图6中的线9-9取得的横截面图。
图10为根据本发明的实施例的衬底片段的图解横截面图。
图11为通过图10中的线11-11取得的横截面图。
图12为通过图10中的线12-12取得的横截面图。
图13为通过图10中的线13-13取得的横截面图。
图14为根据本发明的实施例的衬底片段的图解横截面图，且为图10所展示的衬底片段的替代。
图15为通过图14中的线15-15取得的横截面图。
图16为通过图14中的线16-16取得的横截面图。
图17为通过图14中的线17-17取得的横截面图。
图18为根据本发明的实施例的衬底片段的图解横截面图，且为图15所展示的衬底片段的替代。
具体实施方式
首先，参考图1到4描述实例性实施例垂直铁电场效晶体管构造。在此文件中，水平是指沿着衬底在制造期间相对于其处理的主表面的一般方向，且垂直为大体上正交于所述水平的方向。此外，如本文中所使用，在三维空间中“垂直”及“水平”为相对于彼此的一般垂直方向而与衬底的定向无关。另外，“立面”及“立面地”涉及相对于已在其上制造电路的基座衬底的垂直方向。
实例性衬底片段10包括具有形成于其上的各种材料的电介质材料12，其包括垂直铁电场效晶体管构造14(图1)。实例性电介质材料12为掺硅二氧化物、未掺硅二氧化物及/或氮化硅。集成电路的其它部分或全部制造组件可形成为材料12的部分或从材料12立面向内且不与本文中所揭示的发明特别相关。
本文中所描述的任何材料及/或结构可为同质或非同质，且无论在此上覆的任何材料上方可为连续或不连续。如本文中所使用，(例如)如果此类材料非同质，那么“不同成分”仅需要可直接抵靠彼此的两种所述材料的所述部分化学地及/或物理地不同。如果此类材料非同质，且如果两种所述材料未直接抵靠彼此，那么“不同成分”仅需要最接近彼此的所述两种所述材料的所述部分化学地及/或物理地不同。在此文件中，当所述材料或结构相对于彼此存在至少一些物理触碰接触时，材料或结构为“直接抵靠”。相比而言，在“上方”、“上”及“抵靠”前面未加“直接”涵盖“直接抵靠”以及其中中间材料或结构导致所述材料或结构相对于彼此的非物理触碰接触的构造。此外，除非另有说明，否则可使用任何适当或仍待开发的技术形成每一材料，所述技术的实例有原子层沉积、化学气相沉积、物理气相沉积、外延生长、扩散掺杂及离子植入。
衬底片段10可包括半导体衬底。在此文件的上下文中，术语“半导体衬底”或“半导电衬底”经定义以表示包括半导电材料的任何构造，包含(但不限于)块状半导电材料(例如半导电晶片(单独或以在其上包括其它材料的组合件))及半导电材料层(单独或以包括其它材料的组合件)。术语“衬底”是指任何支撑结构，包含(但不限于)上文中所描述的半导电衬底。
晶体管构造14包括隔离芯16(即，电隔离)。隔离芯16的材料可为电介质，包含(例如)上文关于材料12的成分所描述的任何材料。隔离芯16的材料可为半导电或导电的，且(例如)可对上文的电路组件及/或下文(图中未展示)的晶体管构造14提供电隔离功能，例如保持在接地或一些其它电势。
过渡金属二硫属化物材料18围绕隔离芯16且具有1单层到7单层的侧向壁厚度。在一个实施例中，过渡金属二硫属化物材料18的侧向壁厚度不超过4个单层，且在一个实施例中侧向壁厚度不超过2个单层。实例性材料包含MoS2、WS2、InS2、MoSe2、WSe2及InSe2中的一或多者。过渡金属二硫属化物材料18可被视为具有立面最外端表面17及立面最内端表面19。
铁电栅极电介质材料20围绕过渡金属二硫属化物材料18。在一个实施例中，铁电栅极电介质材料20具有1纳米到30纳米的侧向壁厚度，且在一个实施例中具有2纳米到10纳米的侧向壁厚度。实例性材料包含HfxSiyOz及HfxZryOz。
隔离芯16、过渡金属二硫属化物材料18及铁电栅极电介质材料20各自经展示为具有在水平横截面中成圆形的相应周边。可使用其它形状。
导电栅极材料24围绕铁电栅极电介质材料20。实例包含元素金属的一或多者、两个或两个以上元素金属的合金、导电金属化合物及导电掺杂的半导电材料。过渡金属二硫属化物材料18从导电栅极材料24立面向内及立面向外延伸。在一个实施例中，铁电栅极电介质材料20从导电栅极材料24立面向内及立面向外延伸。电介质材料26可立面地在导电栅极材料24上方及立面地在导电栅极材料下方。实例包含上文关于材料12的成分而描述的材料中的任何者。过渡金属二硫属化物18可被视为具有从导电栅极材料24立面向内的侧向外侧壁27及从导电栅极材料24立面向外的侧向外侧壁29。
导电接触件直接抵靠过渡金属二硫属化物材料的侧向外侧壁，所述过渡金属二硫属化物材料为：a)从导电栅极材料立面向内；或b)从导电栅极材料立面向外。图1、3及4展示此导电接触件28及另一此导电接触件30。导电接触件28直接抵靠从栅极材料24立面向内的材料18的侧向外侧壁27。导电接触件30直接抵靠从栅极材料24立面向外的材料18的侧向外侧壁29。导电接触件的导电材料具有与过渡金属二硫属化物材料的导电材料不同的成分。在理想实施例中，直接抵靠侧壁27/29的导电接触件的材料为元素金属、两个或两个以上元素金属的合金及/或导电金属化合物。在较不理想的实施例中，直接抵靠侧壁的导电接触件的材料为导电掺杂的半导电材料。导电接触件28及/或30可延伸到或包括导线(图1到4中未展示)的一部分以使导电接触件与其它电路组件(图中未展示)连接。另外或替代地及作为实例，导电接触件28或30可与使跨多个此类晶体管的行及列的源极/漏极互连的导电板状结构(图中未展示)连接。无论如何，源极/漏极可为在晶体管构造14的导电栅极材料24顶部及/或下方的材料18的相应部分。
图1描绘实例性实施例，其中个别导电接触件未直接抵靠最接近导电接触件侧向直接抵靠的过渡金属二硫属化物材料的侧向外侧壁的端表面17、19中的一者。替代地，导电接触件中的一或两者可直接抵靠最接近端表面。例如，图5展示替代实施例衬底片段11，其中导电接触件28也直接抵靠端表面19及导电接触件30也直接抵靠端表面17。来自上述实施例的相同数字已用于适当处，其中以不同数字指示一些构造差异。尽管图5展示其中导电接触件28及30两者直接抵靠其相应端表面的实施例，但此类接触件的仅单个者可为如此直接抵靠，其中两个接触件恰好直接抵靠过渡金属二硫属化物材料18的侧壁。在一个实施例中，导电接触件直接抵靠的过渡金属二硫属化物材料的侧壁表面面积大于导电接触件直接抵靠的过渡金属二硫属化物材料的端壁表面面积。图5展示一个此实例性实施例。图5还展示实例性实施例，其中导电接触件28及30分别包括导线32及34的部分。
接着，参考图6到9及衬底片段10c描述替代实施例构造，且其包括一对侧向相对的垂直铁电场效晶体管14a、14b。来自上述实施例的相同参考符号已用于适当处，其中以下标“a”、“b”及“c”或以不同数字指示一些构造差异。隔离材料16侧向位于垂直铁电场效晶体管对14a与14b之间。所述对晶体管包括隔离材料16的两个相对侧向侧36中的每一者上方的过渡金属二硫属化物膜18，其中每一者具有1个单层到7个单层的侧向厚度。铁电栅极电介质膜20从每一过渡金属二硫属化物膜18侧向向外。导电栅极材料24为从每一铁电栅极电介质膜20侧向向外。过渡金属二硫属化物膜18从位于两侧36中的每一者上的导电栅极材料24立面向内及立面向外延伸。
导电接触件直接抵靠所述过渡金属二硫属化物膜中的每一者的侧向外侧壁，所述过渡金属二硫属化物膜a)从导电栅极材料立面向内，或b)从导电栅极材料立面向外。图6及8展示直接抵靠从导电栅极材料24立面向外的每一过渡金属二硫属化物膜18的侧向外侧壁29的两个导电接触件30a、30b。图6及9还展示个别地直接抵靠从导电栅极材料24立面向内的每一过渡金属二硫属化物膜18的侧向外侧壁27的两个导电接触件28a、28b。如果如此连接且借此彼此直接电耦合，那么导电接触件28a及28b可被视为单个或单体式导电接触件，或如果不是这样电耦合那么可被视为两个单独接触件。这同样适用于导电接触件30a及30b。无论如何，上文关于衬底10及11中的导电接触件28及30所描述的任何属性可用于图6到9中的实施例中。
本发明的实施例涵盖垂直铁电场效晶体管的垂直串，且接着参考图10到13描述所述实施例。来自上述实施例的相同数字已用于适当处，其中以下标“d”或以不同数字指示相同构造差异。图10到13展示包括一阵列的垂直铁电场效晶体管42(例如，每串仅展示三个)的垂直串40(例如，仅展示六个)的衬底片段10d。每串将可能包含三个以上晶体管，且远多于六个以上字符串将可能位于给定阵列(即，包含子阵列)中。此外，垂直串40可经排列成除所描绘的并排布置之外的布置。作为实例，相邻行及/或列中的一些或全部垂直串40可为对角交错(图中未展示)。关于与单个垂直串40的构造进行讨论。垂直铁电场效晶体管42的垂直串40包括隔离芯16。过渡金属二硫属化物材料18围绕隔离芯16且具有1个单层到7个单层的侧向厚度。铁电栅极电介质材料20围绕过渡金属二硫属化物材料18。
电介质材料46及导电栅极材料24的交替层44围绕铁电栅极电介质材料20。实例性电介质26包含上文关于材料12的成分所描述的任何材料。层44可为任何所选择的厚度且可具有不同厚度。过渡金属二硫属化物材料18及铁电栅极电介质材料20沿着隔离芯16通过层44立面延伸。过渡金属二硫属化物材料立面延伸超出以下至少一者：a)导电栅极材料层(例如，包括材料24的最顶层44)的立面外部，及b)导电栅极材料层(例如，包括材料24的最底层44)的立面内部。图10到13描绘过渡金属二硫属化物材料18的实例性实施例，过渡金属二硫属化物材料18立面地延伸超出导电栅极材料层44的立面外部及立面内部中的每一者。无论如何及在一个实施例中，立面外部层可包括电介质材料(例如，包括材料46的最顶层44)，且在一个此实施例中过渡金属二硫属化物材料18可立面延伸超出立面外部电介质材料层44，例如图中所展示。在一个实施例中，立面内部层可包括电介质材料(例如，包括材料46的最底层44)，且在一个此实施例中过渡金属二硫属化物材料18可立面延伸超出立面内部电介质材料层44，例如图中所展示。
导电接触件直接抵靠过渡金属二硫属化物材料的侧向外侧壁，所述侧向外侧壁立面超出a)导电栅极材料的外部层，或b)导电栅极材料的内部层。图10及12展示直接抵靠立面超出外部导电栅极材料层44的过渡金属二硫属化物材料18的侧向外部侧壁29的导电接触件30。图10及13还展示直接抵靠立面超出内部导电栅极材料层44的过渡金属二硫属化物材料18的侧向外部侧壁27的另一导电接触件28。可使用上文关于图1到5的实施例所描述的任何属性。在一个实施例中，垂直串40可经配置为NAND串，例如及仅通过与如第7,898,850号美国专利所揭示的架构类似的方式。
图10到图13展示按行及列的方式排列的实例性垂直串40，其中导电栅极材料24包括层44的相应者中的存取线或字线48且所述垂直串在所描绘视图中通过适当电介质材料33相对于彼此电隔离。实例包含上文关于材料12的成分所描述的任何材料。导电接触件28或导电接触件30可与一组感测/位线(图中未展示)连接。接触件28或30的另一者可与不同组的线(图中未展示)或者或许使跨多个此类晶体管的行及列的源极/漏极互连的板状结构(图中未展示)。无论如何，源极/漏极可为在串40中的最顶层及最底层晶体管构造42的导电栅极材料24顶部及下方的材料18的相应部分。无论如何，可以任何适当方式排列任何线。但作为一个实例，感测线(图中未展示)可经定向而垂直于存取线，及与接触件28及30的列或行连接的线(图中未展示)可相对于彼此及所述感测线平行。
接着，参考图14到17及衬底片段10e描述垂直铁电场效晶体管串的实例性实施例。来自上述实施例的相同数字已用于适当处，其中以下标“e”、“r”及“s”或以不同数字指示一些构造差异。图14展示侧向相对的电介质材料46r及46s及侧向相对的导电栅极材料24r及24s的交替层44e。个别层44e中的侧向相对的导电栅极材料24r及24s包括所述个别层44e中一对侧向相对垂直铁电场效晶体管14r及14s的一者的相应栅极。隔离材料16延伸穿过侧向介于相应对晶体管的晶体管42r与42s之间的层44e。过渡金属二硫属化物膜18延伸穿过介于隔离材料16与侧向相对的导电栅极材料24r及24s之间的隔离材料16的两个相对侧向侧36中的每一者上方的层44e。过渡金属二硫属化物膜18分别具有1个单层到7个单层的侧向厚度。
过渡金属二硫属化物18立面延伸超出以下至少一者：a)侧向相对导电栅极材料层(例如，包括栅极材料24r、24s的最顶层44e)的立面外部，及b)侧向相对导电栅极材料层(例如，包括导电栅极材料24r、24s的最底层44e)的立面内部。铁电栅极电介质膜20延伸穿过介于过渡金属二硫属化物膜18与侧向相对导电栅极材料24r及24s之间相应过渡金属二硫属化物膜18的两个相对侧向侧35中的每一者上方的层44e。
导电接触件直接抵靠a)立面超出相对导电栅极材料的外部层的过渡金属二硫属化物膜中的每一者或b)立面超出相对导电栅极材料的内部层的过渡金属二硫属化物中的每一者的侧向外侧壁。图14及16展示直接抵靠每一过渡金属二硫属化物膜18的侧向外侧壁29的导电接触件30r及30s，过渡金属二硫属化物膜18立面超出相对导电栅极材料24r及24s的外部层44e。图14及17展示直接抵靠每一过渡金属二硫属化物膜18的侧向外侧壁27的导电接触件28r及28s，过渡金属二硫属化物膜18立面超出相对导电栅极材料24r及24s的内部层。上文关于图6到9的实施例所描述的任何属性可用于图14到17的实施例中。电介质材料75经展示为延伸穿过层44e以使过渡金属二硫属化物膜18r及18s与侧向相对的垂直铁电场效晶体管42r及42s对的水平相邻垂直串40e隔离。电介质材料75可延伸到材料20及/或24r、24s(图中未展示)中及/或延伸穿过材料20及/或24r、24s。实例性电介质75包含上文关于材料12的成分所描述的任何材料。
图14到17展示其中电介质材料33介于不同串40e的直接相邻导电栅极材料24r与24s之间的实例性实施例。图18展示实例性替代实施例衬底片段10f(横截面对应于图15中的衬底片段)，其中至少一些直接侧向相邻的垂直串40f共享个别层中的导电栅极材料24f的共用水平延伸线，借此可能增加水平密度。来自上述实施例的相同数字已用于适当处，其中以下标“f”指示一些构造差异。可提供介电隔离(图中未展示)以使直接抵靠过渡金属二硫属化物膜的侧壁的导电接触件侧向分离及电隔离，所述过渡金属二硫属化物膜立面超出相对导电栅极材料(图中未展示)的外部或内部层。
使用1个单层到7个单层厚的垂直过渡金属二硫属化物材料或膜作为垂直FeFET中的沟道可减少铁电电介质的去极化趋势，及/或可减少可能存在于铁电电介质与沟道之间的不利高电场。
结论
在一些实施例中，垂直铁电场效晶体管构造包括隔离芯。过渡金属二硫属化物材料围绕所述隔离芯且具有1单层到7单层的侧向壁厚度。铁电栅极电介质材料围绕所述过渡金属二硫属化物材料。导电栅极材料围绕所述铁电栅极电介质材料。所述过渡金属二硫属化物材料从所述导电栅极材料立面向内及立面向外延伸。导电接触件直接抵靠所述过渡金属二硫属化物材料的侧向外侧壁，即a)从所述导电栅极材料立面向内，或b)从所述导电栅极材料立面向外。
在一些实施例中，包括一对垂直铁电场效晶体管的构造包括侧向位于一对垂直铁电场效晶体管之间的隔离材料。所述对晶体管包括在所述隔离材料的两个相对侧向侧中的每一者上方的过渡金属二硫属化物膜且分别具有1个单层到7个单层的侧向厚度。铁电栅极电介质膜为从所述过渡金属二硫属化物膜中的每一者侧向向外。导电栅极材料为从所述铁电栅极电介质膜中的每一者侧向向外。所述过渡金属二硫属化物膜从所述两侧中的每一者上的导电栅极材料立面向内及立面向外延伸。导电接触件直接抵靠所述过渡金属二硫属化物膜中的每一者的侧向外侧壁，即a)从所述导电栅极材料立面向内，或b)从所述导电栅极材料立面向外。
在一些实施例中，垂直铁电场效晶体管的垂直串包括隔离芯。过渡金属二硫属化物材料围绕所述隔离芯且具有1个单层到7个单层的侧向壁厚度。铁电栅极电介质材料围绕所述过渡金属二硫属化物材料。电介质材料及导电栅极材料的交替层围绕所述铁电栅极电介质材料。所述过渡金属二硫属化物材料及所述铁电材料沿着所述隔离芯立面地延伸穿过所述层。所述过渡金属二硫属化物材料立面的延伸超出以下至少一者：a)所述导电栅极材料层的立面外部，及b)所述导电栅极材料层的立面内部。导电接触件直接抵靠所述过渡金属二硫属化物材料的侧向外侧壁，即立面地超出a)所述导电栅极材料的外部层，或b)所述导电栅极材料的内部层。
在一些实施例中，侧向相对的垂直铁电场效晶体管对的垂直串包括侧向相对电介质材料及侧向相对导电栅极材料的交替层。所述层中的个别者中的所述侧向相对导电栅极材料包括所述层中的一对侧向相对的垂直铁电场效晶体管中的一者的相应栅极。隔离材料延伸穿过侧向位于所述相应对的晶体管之间的层。过渡金属二硫属化物膜延伸穿过介于所述隔离材料与所述侧向相对的导电栅极材料之间的隔离材料的两个相对侧向侧中的每一者上方的层。所述过渡金属二硫属化物膜相应具有1个单层到7个单层的侧向厚度。所述过渡金属二硫属化物膜立面地延伸超出以下至少一者：a)所述侧向相对的导电栅极金属层的立面外部，及b)所述侧向相对的导电栅极金属层的立面内部。铁电栅极电介质膜延伸穿过介于所述过渡金属二硫属化物膜与所述侧向相对的导电栅极材料之间的相应过渡金属二硫属化物膜的两个相对侧向侧中的每一者上方的层。导电接触件直接抵靠a)立面地超出所述相对导电栅极材料的外部层的过渡金属二硫属化物膜中的每一者或b)立面地超出所述相对导电栅极材料的内部层的过渡金属二硫属化物膜中的每一者的侧向外侧壁。
依照法规，已参考就构造及方法特征而言或多或少具有特定性的语言描述本文揭示的目标。然而，应了解，所附权利要求书不限于所述特定特征，这是因为本文中所揭示的手段包括实例性实施例。因此，所附权利要求书被给予照字义措辞的全部范围，且根据等效物的规则来适当解释。

Claims (36)

1.一种垂直铁电场效晶体管构造，其包括：
隔离芯；
过渡金属二硫属化物材料，其围绕所述隔离芯且具有1个单层到7个单层的侧向壁厚度；
铁电栅极电介质材料，其围绕所述过渡金属二硫属化物材料；
导电栅极材料，其围绕所述铁电栅极电介质材料，所述过渡金属二硫属化物材料从所述导电栅极材料立面向内及立面向外延伸；及
导电接触件，其直接抵靠a)从所述导电栅极材料立面向内或b)从所述导电栅极材料立面向外延伸的所述过渡金属二硫属化物材料的侧向外侧壁。
2.根据权利要求1所述的构造，其中所述隔离芯、所述过渡金属二硫属化物材料及所述铁电栅极电介质材料各自具有在水平横截面中成圆形的相应周边。
3.根据权利要求1所述的构造，其中所述过渡金属二硫属化物材料的侧向壁厚度不超过4个单层。
4.根据权利要求3所述的构造，其中所述过渡金属二硫属化物材料的侧向壁厚度不超过2个单层。
5.根据权利要求1所述的构造，其中所述过渡金属二硫属化物材料包括MoS2、WS2、MoSe2及WSe2中的至少一者。
6.根据权利要求1所述的构造，其中直接抵靠所述侧向外侧壁的所述导电接触件的材料为元素金属、元素金属的合金及/或导电金属化合物。
7.根据权利要求1所述的构造，其中直接抵靠所述侧向外侧壁的所述导电接触件的材料为导电掺杂半导电材料。
8.根据权利要求1所述的构造，其中所述铁电栅极电介质材料具有1纳米到30纳米的侧向壁厚度。
9.根据权利要求8所述的构造，其中所述铁电栅极电介质材料具有2纳米到10纳米的侧向壁厚度。
10.根据权利要求1所述的构造，其中所述过渡金属二硫属化物材料的侧向壁厚度不超过2个单层，且所述铁电栅极电介质材料具有2纳米到10纳米的侧向壁厚度。
11.根据权利要求1所述的构造，其中所述导电接触件直接抵靠从所述导电栅极材料立面向外的所述过渡金属二硫属化物材料的所述侧向外侧壁。
12.根据权利要求1所述的构造，其中所述过渡金属二硫属化物材料具有立面最外端表面及立面最内端表面，所述导电接触件未直接抵靠最接近所述导电接触件侧向直接抵靠的所述过渡金属二硫属化物材料的所述侧向外侧壁的所述端表面中的一者。
13.根据权利要求1所述的构造，其中所述过渡金属二硫属化物材料具有立面最外端表面及立面最内端表面，所述导电接触件还直接抵靠所述端表面中的一者，所述端表面中的所述一者最接近所述导电接触件侧向直接抵靠的所述过渡金属二硫属化物材料的所述侧向外侧壁。
14.根据权利要求13所述的构造，其中所述导电接触件直接抵靠的所述过渡金属二硫属化物材料的侧壁表面面积大于所述导电接触件直接抵靠的所述过渡金属二硫属化物材料的端壁表面面积。
15.根据权利要求1所述的构造，其中所述导电接触件直接抵靠从所述导电栅极材料立面向内的所述过渡金属二硫属化物材料的所述侧向外侧壁。
16.根据权利要求1所述的构造，其中所述导电接触件直接抵靠从所述导电栅极材料立面向外的所述过渡金属二硫属化物材料的所述侧向外侧壁，且所述构造包括直接抵靠从所述导电栅极材料立面向内的所述过渡金属二硫属化物材料的所述侧向外侧壁的另一导电接触件。
17.根据权利要求16所述的构造，其中所述过渡金属二硫属化物材料具有立面最外端表面及立面最内端表面，所述导电接触件未直接抵靠所述最外端表面，所述另一导电接触件未直接抵靠所述最内端表面。
18.根据权利要求16所述的构造，其中所述过渡金属二硫属化物材料具有立面最外端表面及立面最内端表面，所述导电接触件及所述另一导电接触件中的至少一者分别直接抵靠所述立面最外端表面或所述立面最内端表面。
19.根据权利要求18所述的构造，其中所述导电接触件直接抵靠所述立面最外端表面及所述另一导电接触件直接抵靠所述立面最内端表面。
20.一种包括一对垂直铁电场效晶体管的构造，其包括：
隔离材料，其侧向地介于一对垂直铁电场效晶体管之间，所述对晶体管包括：
过渡金属二硫属化物膜，其位于所述隔离材料的两个相对侧向侧中的每一者上方且各个具有1个单层到7个单层的侧向厚度；
铁电栅极电介质膜，其从所述过渡金属二硫属化物膜中的每一者侧向向外；
导电栅极材料，其从所述铁电栅极电介质膜中的每一者侧向向外，所述过渡金属二硫属化物膜从所述两个相对侧向侧中的每一者上的所述导电栅极材料立面向内及立面向外延伸；及
导电接触件，其直接抵靠a)从所述导电栅极材料立面向内或b)从所述导电栅极材料立面向外延伸的所述过渡金属二硫属化物膜中的每一者的侧向外侧壁。
21.根据权利要求20所述的构造，其中所述隔离材料为电介质。
22.根据权利要求20所述的构造，其中所述导电接触件直接抵靠从所述导电栅极材料立面向外的所述过渡金属二硫属化物材料的所述侧向外侧壁，且所述构造包括直接抵靠从所述导电栅极材料立面向内的所述过渡金属二硫属化物膜中的每一者的所述侧向外侧壁的另一导电接触件。
23.一种垂直铁电场效晶体管的垂直串，其包括：
隔离芯；
过渡金属二硫属化物材料，其围绕所述隔离芯且具有1个单层到7个单层的侧向壁厚度；
铁电栅极电介质材料，其围绕所述过渡金属二硫属化物材料；
电介质材料及导电栅极材料的交替层，其围绕所述铁电栅极电介质材料，所述过渡金属二硫属化物材料及所述铁电栅极电介质材料沿着所述隔离芯立面延伸穿过所述交替层，所述过渡金属二硫属化物材料立面延伸超出以下至少一者：a)所述导电栅极材料的立面外部层，及b)所述导电栅极材料的立面内部层；及
导电接触件，其直接抵靠所述过渡金属二硫属化物材料的侧向外侧壁，所述过渡金属二硫属化物材料立面地超出a)所述导电栅极材料的所述立面外部层，或b)所述导电栅极材料的所述立面内部层。
24.根据权利要求23所述的垂直串，其包括垂直铁电场效晶体管的所述垂直串的阵列。
25.根据权利要求23所述的垂直串，其中所述垂直串为NAND串。
26.根据权利要求23所述的垂直串，其中所述立面外部层包括所述电介质材料。
27.根据权利要求26所述的垂直串，其中所述过渡金属二硫属化物材料立面延伸超出所述电介质材料的所述立面外部层。
28.根据权利要求23所述的垂直串，其中所述立面内部层包括所述电介质材料。
29.根据权利要求28所述的垂直串，其中所述过渡金属二硫属化物材料立面延伸超出所述电介质材料的所述立面内部层。
30.一种侧向相对的垂直铁电场效晶体管对的垂直串，其包括：
侧向相对的电介质材料及侧向相对的导电栅极材料的交替层，所述交替层的各个层中的所述侧向相对的导电栅极材料包括所述各个层中一对侧向相对的垂直铁电场效晶体管中的一者的相应栅极；
隔离材料，其延伸穿过侧向介于所述相应对的所述晶体管之间的所述交替层；
过渡金属二硫属化物膜，其延伸穿过介于所述隔离材料与所述侧向相对的导电栅极材料之间的所述隔离材料的两个相对外部侧向侧中的每一者上方的所述交替层，所述过渡金属二硫属化物膜各个具有1个单层到7个单层的侧向厚度；
所述过渡金属二硫属化物膜立面地延伸超出以下至少一者：a)所述侧向相对的导电栅极材料的立面外部层，及b)所述侧向相对的导电栅极材料的立面内部层；
铁电栅极电介质膜，其延伸穿过介于所述过渡金属二硫属化物膜与所述侧向相对的导电栅极材料之间的各个过渡金属二硫属化物膜的两个相对外部侧向侧中的每一者上方的所述交替层；及
导电接触件，其直接抵靠a)立面地超出所述相对导电栅极材料的所述立面外部层的所述过渡金属二硫属化物膜中的每一者或b)立面地超出所述相对导电栅极材料的所述立面内部层的所述过渡金属二硫属化物膜中的每一者的侧向外侧壁。
31.根据权利要求30所述的串，其包括侧向相对的垂直铁电场效晶体管对的所述垂直串的阵列。
32.根据权利要求31所述的串，其中至少一些直接侧向相邻的所述垂直串共享所述交替层的各个层中的所述导电栅极材料的共用水平延伸线。
33.一种垂直铁电场效晶体管构造，其包括：
隔离芯；
金属二硫属化物材料，其包括InS2及InSe2中的至少一者，且其围绕所述隔离芯且具有1个单层到7个单层的侧向壁厚度；
铁电栅极电介质材料，其围绕所述金属二硫属化物材料；
导电栅极材料，其围绕所述铁电栅极电介质材料，所述金属二硫属化物材料从所述导电栅极材料立面向内及立面向外延伸；及
导电接触件，其直接抵靠a)从所述导电栅极材料立面向内或b)从所述导电栅极材料立面向外延伸的所述金属二硫属化物材料的侧向外侧壁。
34.一种包括一对垂直铁电场效晶体管的构造，其包括：
隔离材料，其侧向地介于一对垂直铁电场效晶体管之间，所述对晶体管包括：
金属二硫属化物膜，其包括InS2及InSe2中的至少一者，且其位于所述隔离材料的两个相对侧向侧中的每一者上方且各个具有1个单层到7个单层的侧向厚度；
铁电栅极电介质膜，其从所述金属二硫属化物膜中的每一者侧向向外；
导电栅极材料，其从所述铁电栅极电介质膜中的每一者侧向向外，所述金属二硫属化物膜从所述两个相对侧向侧中的每一者上的所述导电栅极材料立面向内及立面向外延伸；及
导电接触件，其直接抵靠a)从所述导电栅极材料立面向内或b)从所述导电栅极材料立面向外延伸的所述金属二硫属化物膜中的每一者的侧向外侧壁。
35.一种垂直铁电场效晶体管的垂直串，其包括：
隔离芯；
金属二硫属化物材料，其包括InS2及InSe2中的至少一者，且其围绕所述隔离芯且具有1个单层到7个单层的侧向壁厚度；
铁电栅极电介质材料，其围绕所述金属二硫属化物材料；
电介质材料及导电栅极材料的交替层，其围绕所述铁电栅极电介质材料，所述金属二硫属化物材料及所述铁电栅极电介质材料沿着所述隔离芯立面延伸穿过所述交替层，所述金属二硫属化物材料立面延伸超出以下至少一者：a)所述导电栅极材料的立面外部层，及b)所述导电栅极材料的立面内部层；及
导电接触件，其直接抵靠所述金属二硫属化物材料的侧向外侧壁，所述金属二硫属化物材料立面地超出a)所述导电栅极材料的所述立面外部层，或b)所述导电栅极材料的所述立面内部层。
36.一种侧向相对的垂直铁电场效晶体管对的垂直串，其包括：
侧向相对的电介质材料及侧向相对的导电栅极材料的交替层，所述交替层的各个层中的所述侧向相对的导电栅极材料包括所述各个层中一对侧向相对的垂直铁电场效晶体管中的一者的相应栅极；
隔离材料，其延伸穿过侧向介于所述相应对的所述晶体管之间的所述交替层；
金属二硫属化物膜，其包括InS2及InSe2中的至少一者，且其延伸穿过介于所述隔离材料与所述侧向相对的导电栅极材料之间的所述隔离材料的两个相对外部侧向侧中的每一者上方的所述交替层，所述金属二硫属化物膜各个具有1个单层到7个单层的侧向厚度；
所述金属二硫属化物膜立面地延伸超出以下至少一者：a)所述侧向相对的导电栅极材料的立面外部层，及b)所述侧向相对的导电栅极材料的立面内部层；
铁电栅极电介质膜，其延伸穿过介于所述金属二硫属化物膜与所述侧向相对的导电栅极材料之间的各个金属二硫属化物膜的两个相对外部侧向侧中的每一者上方的所述交替层；及
导电接触件，其直接抵靠a)立面地超出所述相对导电栅极材料的所述立面外部层的所述金属二硫属化物膜中的每一者或b)立面地超出所述相对导电栅极材料的所述立面内部层的所述金属二硫属化物膜中的每一者的侧向外侧壁。
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