JP2016529717A - 垂直方向強誘電性電界効果トランジスタ構造、一対の垂直方向強誘電性電界効果トランジスタを含む構造、強誘電性電界効果トランジスタの垂直方向ストリング、および垂直方向強誘電性電界効果トランジスタの対が横方向に対向する垂直方向ストリング - Google Patents
垂直方向強誘電性電界効果トランジスタ構造、一対の垂直方向強誘電性電界効果トランジスタを含む構造、強誘電性電界効果トランジスタの垂直方向ストリング、および垂直方向強誘電性電界効果トランジスタの対が横方向に対向する垂直方向ストリング Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 222
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 105
- 150000003624 transition metals Chemical class 0.000 claims abstract description 105
- 239000003989 dielectric material Substances 0.000 claims abstract description 44
- 239000010410 layer Substances 0.000 claims description 80
- 239000011810 insulating material Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 3
- 150000002736 metal compounds Chemical class 0.000 claims description 3
- 101100069231 Caenorhabditis elegans gkow-1 gene Proteins 0.000 claims description 2
- 101100179824 Caenorhabditis elegans ins-17 gene Proteins 0.000 claims description 2
- 101150089655 Ins2 gene Proteins 0.000 claims description 2
- 229910016001 MoSe Inorganic materials 0.000 claims description 2
- -1 WS 2 Proteins 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 150000004770 chalcogenides Chemical class 0.000 claims 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 27
- 230000015654 memory Effects 0.000 description 18
- 239000000203 mixture Substances 0.000 description 8
- 230000010287 polarization Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 238000003491 array Methods 0.000 description 2
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- 239000012634 fragment Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
幾つかの実施形態においては、垂直方向強誘電性電界効果トランジスタ構造は、絶縁コアを含む。遷移金属ジカルコゲナイド材料は絶縁コアを包囲し、1モノレイヤーから7モノレイヤーの横方向の壁厚さを有する。強誘電性ゲート誘電体材料は、遷移金属ジカルコゲナイド材料を包囲する。導電性ゲート材料は、強誘電性ゲート誘電体材料を包囲する。遷移金属ジカルコゲナイド材料は、導電性ゲート材料の内部に高さ方向に、および導電性ゲート材料の外部に高さ方向に延びる。導電性接点は、a)導電性ゲート材料の内部に高さ方向に存在するか、またはb)導電性ゲート材料の外部に高さ方向に存在する遷移金属ジカルコゲナイド材料の横方向の外部側壁に直接接触する。
Claims (32)
- 垂直方向強誘電性電界効果トランジスタ構造であって、
絶縁コアと、
前記絶縁コアを包囲し、1モノレイヤーから7モノレイヤーの横方向の壁厚さを有する遷移金属ジカルコゲナイド材料と、
前記遷移金属ジカルコゲナイド材料を包囲する強誘電性ゲート誘電体材料と、
前記強誘電性ゲート誘電体材料を包囲する導電性ゲート材料であって、前記遷移金属ジカルコゲナイド材料は、前記導電性ゲート材料の内部に高さ方向に延び、かつ前記導電性ゲート材料の外部に高さ方向に延びる、導電性ゲート材料と、
a)前記導電性ゲート材料の内部に高さ方向に存在するか、またはb)前記導電性ゲート材料の外部に高さ方向に存在する前記遷移金属ジカルコゲナイド材料の横方向の外部側壁に直接接触する導電性接点と、
を含む、
ことを特徴とする構造。 - 前記絶縁コア、前記遷移金属ジカルコゲナイド材料、前記強誘電性ゲート誘電体材料は、水平方向断面において円形である其々の外周を各々有する、
ことを特徴とする請求項1に記載の構造。 - 前記遷移金属ジカルコゲナイド材料は、横方向の壁厚さが4モノレイヤー以下である、
ことを特徴とする請求項1に記載の構造。 - 前記遷移金属ジカルコゲナイド材料は、横方向の壁厚さが2モノレイヤー以下である、
ことを特徴とする請求項3に記載の構造。 - 前記遷移金属ジカルコゲナイド材料は、MoS2、WS2、InS2、MoSe2、WSe2、InSe2のうちの少なくとも一つを含む、
ことを特徴とする請求項1に記載の構造。 - 前記側壁に直接接触する前記導電性接点の材料は、金属元素、金属元素の合金、および/または導電性金属化合物である、
ことを特徴とする請求項1に記載の構造。 - 前記側壁に直接接触する前記導電性接点の材料は、導電性を有するようにドープされた半導電性材料である、
ことを特徴とする請求項1に記載の構造。 - 前記強誘電性ゲート誘電体材料は、1ナノメートルから30ナノメートルの横方向の壁厚さを有する、
ことを特徴とする請求項1に記載の構造。 - 前記強誘電性ゲート誘電体材料は、2ナノメートルから10ナノメートルの横方向の壁厚さを有する、
ことを特徴とする請求項8に記載の構造。 - 前記遷移金属ジカルコゲナイド材料は、横方向の壁厚さが2モノレイヤー以下であり、前記強誘電性ゲート誘電体材料は、2ナノメートルから10ナノメートルの横方向の壁厚さを有する、
ことを特徴とする請求項1に記載の構造。 - 前記導電性接点は、前記導電性ゲート材料の外部に高さ方向に存在する前記遷移金属ジカルコゲナイド材料の前記横方向の外部側壁に直接接触する、
ことを特徴とする請求項1に記載の構造。 - 前記遷移金属ジカルコゲナイド材料は、高さ方向の最外部端面と、高さ方向の最内部端面とを有し、前記導電性接点は、前記導電性接点が横方向に直接接触する前記遷移金属ジカルコゲナイド材料の前記横方向の外部側壁に最も近接する前記端面のうちの一つに直接接触しない、
ことを特徴とする請求項1に記載の構造。 - 前記遷移金属ジカルコゲナイド材料は、高さ方向の最外部端面と、高さ方向の最内部端面とを有し、前記導電性接点は、前記導電性接点が横方向に直接接触する前記遷移金属ジカルコゲナイド材料の前記横方向の外部側壁に最も近接する前記端面のうちの一つに直接接触する、
ことを特徴とする請求項1に記載の構造。 - 前記導電性接点が直接接触する前記遷移金属ジカルコゲナイド材料の側壁表面面積は、前記導電性接点が直接接触する前記遷移金属ジカルコゲナイド材料の端部壁表面面積よりも大きい、
ことを特徴とする請求項13に記載の構造。 - 前記導電性接点は、前記導電性ゲート材料の内部に高さ方向に存在する前記遷移金属ジカルコゲナイド材料の前記横方向の外部側壁に直接接触する、
ことを特徴とする請求項1に記載の構造。 - 前記導電性接点は、前記導電性ゲート材料の外部に高さ方向に存在する前記遷移金属ジカルコゲナイド材料の前記横方向の外部側壁に直接接触し、前記垂直方向強誘電性電界効果トランジスタ構造は、前記導電性ゲート材料の内部に高さ方向に存在する前記遷移金属ジカルコゲナイド材料の前記横方向の外部側壁に直接接触する別の導電性接点を含む、
ことを特徴とする請求項1に記載の構造。 - 前記遷移金属ジカルコゲナイド材料は、高さ方向の最外部端面と、高さ方向の最内部端面とを有し、前記導電性接点は、前記最外部端面に直接接触せず、前記別の導電性接点は前記最内部端面に直接接触しない、
ことを特徴とする請求項16に記載の構造。 - 前記遷移金属ジカルコゲナイド材料は、高さ方向の最外部端面と、高さ方向の最内部端面とを有し、前記導電性接点および前記別の導電性接点のうちの少なくとも一つは、其々前記高さ方向の最外部端面または前記高さ方向の最内部端面に直接接触する、
ことを特徴とする請求項16に記載の構造。 - 前記導電性接点は、前記高さ方向の最外部端面に直接接触し、前記別の導電性接点は、前記高さ方向の最内部端面に直接接触する、
ことを特徴とする請求項18に記載の構造。 - 一対の垂直方向強誘電性電界効果トランジスタを含む構造であって、
一対の垂直方向強誘電性電界効果トランジスタの横方向の間に絶縁材料を含み、
前記一対のトランジスタは、
前記絶縁材料の二つの対向する横方向側面の各々の上で、1モノレイヤーから7モノレイヤーの横方向の厚さを個々に有する遷移金属ジカルコゲナイド膜と、
前記遷移金属ジカルコゲナイド膜の各々の横方向の外部の強誘電性ゲート誘電体膜と、
前記強誘電性ゲート誘電体膜の各々の横方向の外部の導電性ゲート材料であって、前記遷移金属ジカルコゲナイド膜は、前記二つの側面の各々の上の前記導電性ゲート材料の内部に高さ方向に延び、前記導電性ゲート材料の外部に高さ方向に延びる、導電性ゲート材料と、
a)前記導電性ゲート材料の内部に高さ方向に存在するか、またはb)前記導電性ゲート材料の外部に高さ方向に存在する前記遷移金属ジカルコゲナイド膜の各々の横方向の外部側壁に直接接触する導電性接点と、
を含む、
ことを特徴とする構造。 - 前記絶縁材料は誘電体である、
ことを特徴とする請求項20に記載の構造。 - 前記導電性接点は、前記導電性ゲート材料の外部に高さ方向に存在する前記遷移金属ジカルコゲナイド材料の前記横方向の外部側壁に直接接触し、前記導電性ゲート材料の内部に高さ方向に存在する前記遷移金属ジカルコゲナイド膜の各々の前記横方向の外部側壁に直接接触する別の導電性接点を含む、
ことを特徴とする請求項20に記載の構造。 - 垂直方向強誘電性電界効果トランジスタの垂直方向ストリングであって、
絶縁コアと、
前記絶縁コアを包囲し、1モノレイヤーから7モノレイヤーの横方向の壁厚さを有する遷移金属ジカルコゲナイド材料と、
前記遷移金属ジカルコゲナイド材料を包囲する強誘電性ゲート誘電体材料と、
誘電体材料と、前記強誘電性ゲート誘電体材料を包囲する導電性ゲート材料との交互の層であって、前記遷移金属ジカルコゲナイド材料および前記強誘電性材料は、前記層を通って前記絶縁コアに沿って高さ方向に延び、前記遷移金属ジカルコゲナイド材料は、a)前記導電性ゲート材料層の高さ方向の外部およびb)前記導電性ゲート材料層の高さ方向の内部のうちの少なくとも一つを超えて高さ方向に延びる、交互の層と、
a)前記導電性ゲート材料の前記外部層またはb)前記導電性ゲート材料の前記内部層を超えて高さ方向に存在する前記遷移金属ジカルコゲナイド材料の横方向の外部側壁に直接接触する導電性接点と、
を含む、
ことを特徴とするストリング。 - 前記垂直方向強誘電性電界効果トランジスタの垂直方向ストリングのアレイを含む、
ことを特徴とする請求項23に記載のストリング。 - 前記垂直方向ストリングはNANDストリングである、
ことを特徴とする請求項23に記載のストリング。 - 前記高さ方向の外部の層は前記誘電体材料を含む、
ことを特徴とする請求項23に記載のストリング。 - 前記遷移金属ジカルコゲナイド材料は、前記誘電体材料の層の高さ方向の外部を超えて高さ方向に延びる、
ことを特徴とする請求項26に記載のストリング。 - 前記高さ方向の内部の層は前記誘電体材料を含む、
ことを特徴とする請求項23に記載のストリング。 - 前記遷移金属ジカルコゲナイド材料は、前記誘電体材料層の前記高さ方向の内部を超えて高さ方向に延びる、
ことを特徴とする請求項28に記載のストリング。 - 垂直方向強誘電性電界効果トランジスタの対が横方向に対向する垂直方向ストリングであって、
横方向に対向する誘電体材料と、横方向に対向する導電性ゲート材料との交互の層であって、前記層のうちの個々の層における前記横方向に対向する導電性ゲート材料は、前記層内の横方向に対向する垂直方向強誘電性電界効果トランジスタの対のうちの一つの其々のゲートを含む、交互の層と、
前記其々の対の前記トランジスタの間において前記層を横方向に通って延びる絶縁材料と、
前記絶縁材料と、前記横方向に対向する導電性ゲート材料との間の前記絶縁材料の二つの対向する横方向側面の各々の上の前記層を通って延び、1モノレイヤーから7モノレイヤーの横方向の厚さを個々に有する遷移金属ジカルコゲナイド膜と、
a)前記横方向に対向する導電性ゲート材料層の高さ方向の外部とb)前記横方向に対向する導電性ゲート材料層の高さ方向の内部とのうちの少なくとも一つを超えて高さ方向に延びる前記遷移金属ジカルコゲナイド膜と、
前記遷移金属ジカルコゲナイド膜と、前記横方向に対向する導電性ゲート材料との間の前記個々の遷移金属ジカルコゲナイド膜の二つの対向する横方向側面の各々の上の前記層を通って延びる強誘電性ゲート誘電体膜と、
a)前記対向する導電性ゲート材料の前記外部層を超えて高さ方向に存在する前記対向する前記遷移金属ジカルコゲナイド膜の各々、またはb)前記対向する導電性ゲート材料の前記内部層を超えて高さ方向に存在する前記遷移金属ジカルコゲナイド膜の各々の横方向外部側壁に直接接触する導電性接点と、
を含む、
ことを特徴とするストリング。 - 垂直方向強誘電性電界効果トランジスタの対が横方向に対向する前記垂直方向ストリングのアレイを含む、
ことを特徴とする請求項30に記載のストリング。 - 前記垂直方向ストリングの横方向に直接隣接する少なくとも幾つかは、前記層の個々の層における前記導電性ゲート材料の共通の水平方向に延びる線を共有する、
ことを特徴とする請求項31に記載のストリング。
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