CN1490880A - 使用铁电栅极场效应晶体管的非易失性存储器和制造方法 - Google Patents
使用铁电栅极场效应晶体管的非易失性存储器和制造方法 Download PDFInfo
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- CN1490880A CN1490880A CNA031581994A CN03158199A CN1490880A CN 1490880 A CN1490880 A CN 1490880A CN A031581994 A CNA031581994 A CN A031581994A CN 03158199 A CN03158199 A CN 03158199A CN 1490880 A CN1490880 A CN 1490880A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (47)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/256,881 | 2002-09-27 | ||
US10/256,881 US6744087B2 (en) | 2002-09-27 | 2002-09-27 | Non-volatile memory using ferroelectric gate field-effect transistors |
Publications (2)
Publication Number | Publication Date |
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CN1490880A true CN1490880A (zh) | 2004-04-21 |
CN1297015C CN1297015C (zh) | 2007-01-24 |
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CNB031581994A Expired - Lifetime CN1297015C (zh) | 2002-09-27 | 2003-09-17 | 使用铁电栅极场效应晶体管的非易失性存储器和制造方法 |
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---|---|
US (1) | US6744087B2 (zh) |
JP (1) | JP4052648B2 (zh) |
CN (1) | CN1297015C (zh) |
TW (1) | TWI293504B (zh) |
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CN102263108A (zh) * | 2010-05-31 | 2011-11-30 | 海力士半导体有限公司 | 非易失性存储器件及其制造方法 |
CN105308751A (zh) * | 2013-05-17 | 2016-02-03 | 美光科技公司 | 具有铁电场效应晶体管存储器阵列的设备及相关方法 |
CN105453267A (zh) * | 2013-08-12 | 2016-03-30 | 美光科技公司 | 垂直铁电场效晶体管构造、包括一对垂直铁电场效晶体管的构造、铁电场效晶体管的垂直串、及侧向相对的垂直铁电场效晶体管对的垂直串 |
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CN111523658A (zh) * | 2020-07-02 | 2020-08-11 | 南京优存科技有限公司 | 双位存储单元及其在存内计算的电路结构 |
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TWI293504B (en) | 2008-02-11 |
US20040061153A1 (en) | 2004-04-01 |
TW200405549A (en) | 2004-04-01 |
CN1297015C (zh) | 2007-01-24 |
JP2004119970A (ja) | 2004-04-15 |
US6744087B2 (en) | 2004-06-01 |
JP4052648B2 (ja) | 2008-02-27 |
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