CN101980086A - 浸没曝光设备以及浸没曝光方法 - Google Patents

浸没曝光设备以及浸没曝光方法 Download PDF

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CN101980086A
CN101980086A CN2010105102906A CN201010510290A CN101980086A CN 101980086 A CN101980086 A CN 101980086A CN 2010105102906 A CN2010105102906 A CN 2010105102906A CN 201010510290 A CN201010510290 A CN 201010510290A CN 101980086 A CN101980086 A CN 101980086A
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microscope carrier
optical module
backing plate
substrate holder
immersion fluid
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CN101980086B (zh
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M·宾纳德
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Nikon Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
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    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
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    • G03B27/32Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52Details
    • GPHYSICS
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    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • GPHYSICS
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    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G03F7/2055Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser for the production of printing plates; Exposure of liquid photohardening compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

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Abstract

本发明公开浸没曝光设备和浸没曝光方法,用于在更换平板印刷机(10)中工件(208)期间,将浸没流体(212)保持在邻接投射透镜(16)的间隙。该设备和方法包括光学组件(16)和台组件(202),前者作成为可以将图像投射到工件(208),后者包括工件座(204),该工件座作成为可以支承邻接光学组件(16)的工件(208)。配置外围系统(26),以便向台组件(202)光学组件(16)和工件(208)之间形成的间隙输送浸没流体(212),从该间隙中除去该浸没流体(212)。在完成工件(208)曝光后,更换系统(216)取下工件(208),用第二工件替换该工件。配置浸没流体约束系统(214),在取下第一工件(208),用第二工件代替时,可以将浸没流体(212)保持在该间隙中。

Description

浸没曝光设备以及浸没曝光方法
本发明专利申请是申请号为200480009702.0、申请日为2004年3月17日、发明名称为“保持平板印刷投射透镜下面的浸没流体的设备和方法”的发明专利申请的分案申请。
有关申请
本申请要求2003年4月11日提出的题为“浸没式平板印刷方法的流体附着垫板”的临时专利申请60/462499的先有权,该申请的内容在所有方面已作为参考包含在本文中。
技术领域
本发明涉及保持平板印刷投射透镜下面的浸没流体的设备和方法。
背景技术
在进行半导体加工期间,通常采用平板印刷系统将光栅上的图像传送到半导体晶片上。典型的平板印刷系统包括:光学组件;固定光栅的光栅台,该光栅确定图案;定位半导体晶片的晶片台组件;测量系统,该系统准确检测光栅和晶片的位置。在操作期间,由光栅上的图像由光学组件投射到晶片上。投射的图像其大小通常是晶片上的一个器件小区域或多个小区域的大小。在曝光后,晶片台组件移动晶片,然后进行另一次曝光,重复这一操作,一直到使晶片上的所有区域曝光。然后取下晶片,在其位置上换上新的晶片。
浸没式平板印刷系统采用一层浸没流体,该流体在晶片曝光期间完全充满光学组件和晶片之间的间隙。浸没流体的光学特性随同光学组件一起允许采用标准的光学平板印刷方法投射比现在更小尺寸特征。例如,对于下一代的包含65nm、45nm和超过这一限度的半导体工艺,现在正考虑采用浸没式平板印刷方法。因此,在可预见的未来一段时间中,浸没式平板印刷技术代表了很显著的工艺成果,这种成果使得可以继续采用光学平板印刷方法。
在晶片曝光后,除去该晶片,并用新的晶片替换。如在浸没式系统中现在看到的,浸没流体可能从间隙中流走,随后在替换晶片后再进行补充。具体是,在需要替换晶片时,将供给间隙的流体关掉,并将流体从该间隙中除去(即用真空法除去),然后取下已加工的晶片,使新的晶片对准放在光学组件的下面,然后用新的浸没流体再充满该间隙。一当上述所有步骤完成后,开始曝光新的晶片。
上述浸没式平板印刷方法的晶片更换,因为许多原因,是存在问题的。不断充满和排放间隙中的流体可能造成浸没流体的变化,并可能造成在浸没流体中形成气泡。这种气泡和不稳定的流体可能影响将光栅上的图像投射到晶片上,因而降低了生产率。整个工艺还包括很多步骤,因此,是费时间的,这样便降低了机器的总产量。
因此需要一种在晶片台移离投射透镜时例如更换晶片时将浸没流体保持在邻接投射透镜间隙中的设备和方法。
发明内容
公开一种设备和方法,这种设备和方法用于将浸没流体保持在靠近浸没平板印刷机投射透镜的间隙中。这种设备和方法包括光学组件和台组件,前者作成为可以将图像投射到工件上,后者包括工件座,该工件座作成为可以支承邻接光学组件的工件。提供一种外围系统,用于向该间隙输送浸没流体,和除去该间隙中的浸没流体。在工件完成曝光后,更换系统将工件取下,用第二工件代替该工件。提供一种浸没流体系统,用于在工件台移离投射透镜时,保持该间隙中的浸没流体。因此,在用第二工件替换第一工件时,该间隙不需要用浸没流体重新充满。
附图说明
图1示出具有本发明特征的平板印刷机;
图2是本发明一个实施例浸没式平板印刷机的横截面图;
图3A和3B分别是横截面图和顶视图,示出本发明另一实施例的浸没式平板印刷机;
图4A和4B分别是横截面图和顶视图,示出本发明另一实施例的浸没式平板印刷机;
图5A和5B是顶视图,示出本发明其他实施例的两个不同的双晶片台;
图6A是顶视图,示出本发明另一实施例的双台平板印刷机;
图6B-6E是一系列示意图,示出本发明的晶片替换;
图7A是流程图,简要概括了按照本发明加工工件的工艺;
图7B是流程图,更详细示出工件的处理。
附图中相同的参考编号是指相同的部件。
具体实施方式
图1是示意图,示出具有本发明特征的平板印刷机10。该平板印刷机10包括支架12、照明系统14(照射装置)、光学组件16、光栅台组件18、工件台组件20、测量系统22、控制系统24和外围流体系统26。为适应平板印刷机10的设计要求,可以改变平板印刷机10部件的设计。
在一个实施例中,采用该平板印刷机10,将光栅(reticle)28上的集成电路图案(未示出)投射到半导体晶片30(用虚线示出)上。该平板印刷机10装在安装座32上,例如装在地面、底座、或者楼板或者其他另外的支承构件上。
在本发明的各种实施例中,可以用平板印刷机10作扫描式光刻系统,该系统可以使光栅28上的图案曝光在晶片30上,而光栅28和晶片30可以同步移动。在一种扫描式平板印刷机中,该光栅28利用光栅台组件18,可作垂直于光学组件16光轴的运动,而晶片30利用晶片台组件20可作垂直于光学组件16光轴的运动,在光栅28和晶片30同步移动期间,扫描该光栅28和晶片30。
按照另一种方式,平板印刷机10可以是重复步进式光刻系统,在光栅28和晶片30不动时,该光刻系统曝光光栅28。在重复式步进工艺中,在曝光各个区域时,晶片30相对于光栅28和光学组件16位于恒定位置。因此,在接连的曝光操作步骤期间,该晶片随晶片台组件20接连地垂直于光学组件16的光轴移动,使得晶片30的下一区域相对于光学组件16和光栅28固定就位,以便曝光。在此操作之后,光栅28上的图像顺序地曝光在晶片的区域上,然后再使晶片30的下一区域相对于光学组件16和光栅28固定就位。
使用本文提供的平板印刷机10不一定限于制造半导体的光刻系统。例如,平板印刷机10可以用作为LCD(液晶显示器)光刻系统,该系统将液晶显示工件图案曝光在长方形的玻璃板上,或者用作制造薄膜磁头的光刻系统。因此,本文中所用术语“工件”是指一种器件,在该器件上用平板印刷方法形成图像,例如在晶片或者LCD底衬上形成图案,但不限于晶片和LCD。
设备支架12支承平板印刷机10的部件,示于图1的设备支架12支承位于安装底座32上面的光栅台组件18、晶片台组件20、光学组件16和照明系统14。
照明系统14包括照明光源34和照明光学组件36。该照明光源34发射光能光束(辐射光束),该照明光学组件36将照明光源34的光能光束投射到光学组件16上,该光束选择性照明光栅28的不同部分,并使晶片30曝光。在图1中,照明光源34示出为支承在光栅台组件18的上面。然而,照明光源34通常固定在设备支架12两侧的一个侧上,而照明光源34的光能光束利用照明光学组件36射到光栅台组件18的上面。
该照明光源34可以是g谱线光源(436nm)、i谱线光源(365nm)、KrF激光(248nm)、ArF激光(193nm)或者F2激光(157nm)。按照另一种方式,照射光源34可以发射X射线。
光学组件16将穿过光栅28的光投射和/或聚焦在晶片30上。取决于平板印刷机10的设计,该光学组件16可以放大或者缩小光栅28上照明的图像。该光学组件不一定限于缩小系统。该系统还可以是1倍放大或者多倍放大的系统。
另外,采用波长为200nm或者更小的真空紫外线曝光工件时,可以考虑应用反折射式光学系统。反折射式光学系统的例子包括公开专利申请公报中公布的日本专利申请No.8-171054和其对应的美国专利No.5668672以及日本专利申请No.10-20195和其对应美国专利No.5835275。在这些情况下,反射光学工件可以是反折射式光学系统,包括光束分裂器和凹面反射镜。在公开专利申请公告上公布的日本专利申请No.8-334695和其对应的美国专利No.5689377以及日本专利申请No.10-3039和其对应美国专利申请No.873605(申请日期:1997年12月6日),还应用反射折射式光学系统,该系统包括凹面反射镜等,但是没有光束分裂器,这些专利均可以用于本发明。经允许,上述美国专利以及公开专利申请公告中分布的日本专利申请的内容均作为参考包含在本文中。
光栅台组件18相对于光学组件16和晶片30保持和定位光栅28。在一个实施例中,光栅台组件18包括保持光栅28的光栅台38和光栅台运动组件40,该组件移动和定位光栅台38和光栅28。
各个台运动组件40、44可以以三个自由度移动相应的台38和42。例如,在另一实施例中,各个台运动组件40、44可以以一个自由度、两个自由度、三个自由度、四个自由度、五个自由度或者六个由度移动相应的台38和42。光栅台运动组件40和工件台运动组件44分别包括一个或者多个驱动器,例如转动马达、音圈马达、利用罗仑兹力产生驱动力的线性马达、电磁驱动器、平面马达或者其他另外的加力驱动器。
在光刻系统中,在晶片台组件或者光栅台组件中采用线性马达(见美国专利No.5623853或者5528118,已作为参考包含在本文中)时,该线性马达可以是应用气垫的气悬式马达,或者是利用罗仑兹力或者磁抗力的磁悬式马达。另外,这种台可以沿导向件运动,或者这种台可以是不用任何导向件的无导向式台。
按照另一种方式,可以用平面马达驱动这些台中的一个台,该平面马达利用由永磁体单元和电枢线圈单元产生的电磁力驱动该台,该永磁体单元具有两维配置的永磁体,该电枢线圈具有两维配置的位于相对位置的线圈。采用这种驱动系统时,永磁体单元或者电枢线圈单元连接于台的底座,而其中另一单元装在该台的运动侧平面上。
上述台子的运动产生反作用力,该作用力可能影响光刻系统的操作性能。由晶片(底衬)台运动产生的反作用力可由所用支架部件通过机械作用传送到楼板(地板)上,如美国专利No.5528100和公布的日本专利申请No.8-136475所述。另外,光栅(掩模)台运动产生的反作用力在机械上由使用的支架部件传送到楼板(底板)上,如美国专利No.8574820和公布日本专利申请No.8-330224。经允许,美国专利No.5528100、5874820以及日本专利申请No.8-330224的内容已作为参考包含在本文中。
测量系统22检测光栅28和晶片30相对于光学组件16或者其他一些参照物的运动。控制系统24可以根据这些信息控制光栅台组件18和工件台组件20,以便分别准确定位光栅28和晶片30。可以改变测量系统22的设计。例如,测量系统22可以采用多激光干涉计、编码器、反射镜和/或者其他测量器件。
该控制装置24接收测量系统22来的信息,控制台的运动组件18和20,以便准确定位光栅28和晶片30。另外,控制系统24可以控制外围系统26部件的操作。该控制系统24包括一个或者多个处理器和电路。
该外围系统26控制位于光学组件16和晶片30之间间隙中的环境。该间隙包括成像场。该成像场包括邻接晶片30要曝光部位的区域和光能光束在光学组件16和晶片30之间通过的区域。对于这种设计,外围系统26可以控制成像场中的环境。可以根据晶片30和平板印刷机其余部件的设计,改变由外围系统26在间隙中产生和/或可控制的要求环境,该平板印刷机10的部件包括照明系统14。例如,要求的可控环境可以是流体例如水。按照另一种方式,要求的可控环境可以是另一种流体例如气体。在各种实施例中,该间隙在晶片30的顶表面和光学组件16的最后一个光学组件之间的高度在0.1-10mm之间。
在一个实施例中,该外围系统26用浸没流体充满成像场和间隙的其余部分。可以改变外围系统26和该外围系统26部件的设计。在不同的实施例中,该外围系统26用喷嘴、电动海绵、多孔材料等将浸没流体输送到和/或注入到该间隙中,并采用真空泵、海绵等除去该间隙中的流体。可以改变外围系统26的设计。例如,该系统可以在间隙或者靠近间隙的一个或者多个位置注入浸没流体。另外,该浸没流体系统有助于在工件30、该间隙和/或光学组件16边缘的,或者靠近这些部件的一个和多个位置除去和/或者清除这些浸没流体。对于各种外围系统的进一步细节,可参考2003年4月9日提出的题为“浸没式平板印刷流体控制系统”的美国临时专利申请60/462142、2003年4月10日提出的题为“浸没式平板印刷机的真空环系统和吸液环系统”的美国临时申请60/462112、2003年9月3日提出的“具有多孔材料的无噪音流体回收装置”的美国临时专利申请60/500312和2004年4月2日提出的题为“浸没式平板印刷喷头设计”的美国临时专利申请60/541329,所有这些专利均作为参考包括在本文中。
参考图2,图中示出本发明一个实施例平板印刷机的横截面图。该平板印刷机200包括光学组件16和台组件202,该台组件包括晶片座204和晶片台206。该晶片座204作成为可以将晶片208(或者任何其他类型的工件)支承在光学组件16的下面。围绕该光学组件16的外围系统26用于向晶片208和光学组件16最后一个光学部件之间的间隙输送浸没流体212,并除去该间隙中的浸没流体。工件更换系统216包括晶片装载器218(即机械手)和准直工具220(即显微CCD照相机),该更换系统作成为可以从晶片座204上取下晶片208,并用第二晶片替换该晶片。完成这一操作通常采用晶片装载器218,将晶片座204上的晶片208升高,并取下该晶片。随后将第二晶片(未示出)放在晶片卡盘218上,并用准直工具220对准,然后定位在位于光学组件16下面的晶片座204上。
采用此实施例,晶片台206包括浸没流体约束系统214,该系统作成为,可以在更换晶片期间,可以将浸没流体212保持在靠近光学组件16最后一个光学部件的间隙中。该浸没流体约束系统214包括靠近晶片座204的垫板222。采用配置在垫板222和晶片台206之间的支承部件224来支承垫板222。该晶片座204具有上部平表面,该表面与晶片208的表面共平面。该垫板222也具有上部平的表面,该表面与晶片座204的上表面和晶片表面共平面。该垫板222靠近晶片座204配置,其间具有很小的间隙(例如0.1-1.00mm),使得浸没流体212可以在晶片座和垫板222之间流动,而不会渗漏。在更换晶片期间,晶片台206沿箭头226的方向移动,使得垫板222代替晶片台204定位在光学组件16的下面,从而保持间隙中的流体,或者保持该流体间隙的大小。在已经对准新晶片后,将晶片台往后移动到其原来的位置,因而在第二晶片定位在光学组件16的下面时,垫板222移离该间隙。在各种实施例中,垫板222可以接着晶片台204配置,在其间不形成任何间隙。可以调节晶片座204的垂直位置和/或倾斜度,使得在晶片台204从光学组件16的下面移出之前,该晶片台表面与垫板表面共平面。保持垫板222和光学组件16之间间隙不限于上述更换晶片操作。在对准操作或者测量操作期间,垫板222可以大到足以将浸没流体212保持在垫板222和光学组件16之间的空间中。在这些操作中,由浸没流体212占据的那部分区域位于晶片台204的上表面上。
参考图3A和3B,图中示出本发明另一实施例的另一种浸没式平板印刷机的横截面图和顶视图。该平板印刷机300包括光学组件16和台组件302,该台组件包括晶片座304和晶片台306。该晶片座304作成为可以将晶片308(或者任何其他类型的工件)支承在光学组件16的下面。包围光学组件16的外围系统26用于向晶片308和光学组件16最下面一个光学部件之间的间隙输送浸没流体312,并除去该间隙中的浸没流体。工件更换系统316包括晶片装载器318和准直工具320,该更换系统作成为可以从晶片座304上取下晶片308,并用第二晶片代替该晶片。完成这一操作是采用晶片装载器将晶片308从晶片座上取下来。随后,将第二晶片(未示出)装在晶片卡盘318上,用准直工具320对准,然后定位在光学组件16的下面。如图3B清楚示出的,在操作期间,采用一组马达322以两个自由度(X和Y)移动台组件302,该台组件包括晶片座304和晶片台306。如上所述,该马达322可以是任何类型的马达,例如,旋转马达、线性马达、音圈马达等。
浸没式平板印刷机300还包括浸没流体约束系统324,该系统作成为,在晶片座304从光学组件下面的移出时,可以将浸没流体312保持在该光学组件16下面的空间中。该浸没流体约束系统324包括垫板326、马达328和控制系统330。该垫板326邻接光学组件16和晶片台204配置。该晶片座304具有上部平表面,该表面与晶片308的表面共平面。该垫板326具有上部平表面,该表面与晶片座304的上表面和晶片表面共平面。该垫板326可以用马达328在X和Y方向移动。该马达328由控制系统330控制。马达328可以是任何类型的马达以及马达322。当晶片座304(晶片台306)从光学组件16的下面移走时,垫板326便定位在光学组件16的下面。在替换晶片时,晶片座304移离光学组件16。同时,控制系统330操纵马达328,将垫板326移到光学组件的下面,代替晶片座304。垫板326因此将浸没流体312保持在光学组件16下面的间隙中。在用准直工具320对准新的晶片后,将晶片台304重新定位在光学组件16的下面。在同时,控制系统330操纵马达328,使垫板326从间隙退回,以便防止浸没流体312溢出。在晶片更换操作时,控制系统330移动晶片座304和垫板326,在该晶片台304和垫板326之间具有小的间隙,而光学组件下面的浸没流体312在晶片座304和垫板326之间流动。因此,浸没流体约束系统324在替换晶片期间可以保持间隙中的浸没流体312。在此实施例中,晶片座304(晶片台306)和垫板326是单独运动的。因此,晶片座304可以自由移动,而浸没流体312保持在垫板326和光学组件16之间的空间中。在本发明的各种实施例中,控制系统330可以是单独的控制系统,或者还可以合并到用于定位晶片台306和晶片座304的马达322的控制系统中。可以调节晶片座304和垫板326中至少一个部件的垂直位置和/或倾斜度,使得晶片座表面与垫板表面共平面,然后再使晶片座从光学组件16的下面移出。从光学组件16的下面移出晶片座304的操作不一定限于晶片替换操作。例如,在将浸没流体保持在垫板326和光学组件16之间的空间中时,可以执行准直操作、测量操作或者其他操作。
参照图4A和4B,图中示出浸没式平板印刷机的两个横截面图。该平板印刷机400包括光学组件16和台组件402,该台组件包括晶片座404和晶片台406。该晶片座404作成为可以将晶片408(或者任何其他类型的工件)支承在光学组件16的下面。包围该光学组件16的外部系统26用于向晶片408和光学组件最下部光学部件之间的间隙输送浸没流体412,并用于除去该间隙中的浸没流体。工件更换系统416包括晶片装载器418和准直工具420,该更换系统作成为可以从晶片座404上取下晶片408,并用第二晶片代替该晶片。完成这一操作是用晶片装载器418,从晶片座404上取下晶片408。随后,将第二晶片(未示出)放在晶片卡盘418上,用准直工具420准直,然后定位在光学组件16的下面,如图4A所示。
浸没式平板印刷机400还包括浸没流体约束系统424,该系统作成为,在晶片座404从光学组件16的下面移出时,将浸没流体412保持在光学组件16下面的空间中。该浸没流体约束系统424包括垫板426、形成在光学组件16上的第一夹具428和形成在晶片座404上的第二夹具430。当浸没流体412保持在光学组件16和晶片座404(或者晶片408)之间时,该垫板426由第二夹具430固定在晶片座404上的位置。当晶片座404例如在更换晶片操作期间移离光学组件16时,垫板426便与晶片座404脱开,并由第一夹具428固定,从而将浸没流体412保持在光学组件16和垫板426之间。该晶片座404具有平的上表面,该表面与晶片408的表面共平面。固定在晶片座404上的垫板426也具有上部平表面,该表面与晶片座404的上表面和晶片表面共平面。因此,可以将垫板426和晶片408移到光学组件的下面,而不发生浸没流体渗漏。在各种实施例中,夹具428和430可以是真空夹具、磁夹具、静电夹具或者机械夹具。
如图4A清楚示出的,垫板426在晶408曝光时,定位在晶片座404上。在晶片曝光期间,采用第二夹具430使垫板426就位于晶片座404上的位置。在如图4B所示的替换晶片期间,使晶片座404沿箭头432的方向移动,使得垫板定位在光学组件16的下面,代替晶片408。在进行这种操作时,将垫板426固定于晶片座404的第二夹具松开,而第一夹具428将垫板426固定于光学组件16。结果,浸没流体412在更换晶片408时,可以保持在光学组件的下面。在准直晶片后,使晶片座404沿箭头432的反方向移动,将新的晶片定位在光学组件的下面。在此运动之前,第一夹具428松开,而第二夹具430重新将垫板426固定于晶片座404。在此实施例中,在垫板426由第一夹具428固定时,晶片座404可以自由移动。
在各种实施例中,由第一夹具428固定垫板426的操作不仅仅限于晶片替换操作。在浸没流体312保持在光学组件16和第一夹具428固定的垫板426之间形成的空间时,还可以进行准直操作、测量操作或者任何其他操作。另外,夹具428配置在支架12或者其他支承部件上,而夹具430配置在晶片台406上。垫板426可以保持在除台组件420外的活动部件上。
图5A和5B是顶视图,示出本发明其他实施例的两个不同双台式浸没平板印刷系统。对于这种双台式浸没平板印刷系统的基本结构和操作,请参看美国专利No.6262796和6341007。经允许,该美国专利No.6262796和6341007的内容已作为参考包含在本文中。在两个实施例中,示出一对晶片台WS1和WS2。应用马达502在水平方向移动或者定位两个台WS1和WS2,而用马达504在垂直方向移动和定位WS1和WS2。采用马达502和504将一个台交替地定位在光学组件16的下面,同时在另一个台上进行晶片更换和准直操作。在光学组件16下面的晶片完成曝光后,使两个台子交换,并重复上述操作。对于其中任何一种结构,可以将本发明的上面参照图2-4所述的各种实施例用于其中任一种双台式装置,将浸没流体保持在光学组件16下面的间隙中。对于例如图2所示的实施例,可以改变图5A或者5B所示的各个晶片台WS1和WS2,改变成包括垫板222和支承部件224。而对于图3所示的实施例,可以采用靠近光学组件16的单一垫板326、马达328和控制系统330。该垫板326可以单独地移离台WS1和WS2。在晶片台WS1和WS2交换期间,可以将垫板326移到光学组件16的下面,以便将浸没流体312保持在光学组件16的下面。最后对于图4所示的实施例,可以采用可脱开的单一垫板。在晶片台WS1和WS2交换时,可以应用垫板426将浸没流体保持在图4B所示的间隙中。另一方面,在曝光期间,可以将垫板固定在正曝光的晶片台的晶片座上。按照这种方式,两个晶片台WS1和WS2只需要一个垫板。按照另一种方式,如下所述,也可以用第二台作垫板。
参考图6A,图中示出实施本发明一个实施例的双台式平板印刷机。在此实施例中,浸没式平板印刷系统600包括第一台604和第二台606。这两个台可以通过马达602驱动在X和Y方向移动。在此实施例中,可以应用台604和606本身来保持间隙中的浸没流体。例如,如图所示,第一台604定位在光学组件16的下面,在要替换工件时,用马达602定位装有第二工件的第二台606,使其邻接第一台604。对于并排配置的两个台,它们基本上形成连续的表面。然后,应用马达602一致地移动这两个台,使得第二台606定位在光学组件16的下面,而第一台不再位于光学组件16的下面,利用第二台606保持间隙中的浸没流体,该第二台与第一台形成基本上连续的表面。在各种其他实施例中,第二台606也可以是装有垫板的“垫板台”,在第二工件放在第一台604上时,可以用该垫板台将浸没流体保持在间隙中。同样,可以采用图5A或者5B中所示的马达装置。
图6B-6E是一系列示意图,示出本发明一个实施例的工件更换。图6B示出在完成曝光后,位于台604上的晶片。图6C示出与光学组件16下面的第一台604接触(或者紧靠)的第二台606。图6D示出发生的转移,即将第二台606定位在光学组件16的下面。最后在图6E中,第一台604已移离光学组件16。如图6C和6D清楚示出的,这两个台604和606在转移期间,形成在光学组件16下面的连续表面,因此可以将浸没流体保持在间隙中。在示出的实施例中,第二台606是垫板台。然而,该台也可以是如上所述的工件台。
在上述各种实施例中,该垫板可以用许多不同的材料制造,例如陶瓷材料、金属材料、塑料。这些材料按照其他实施例可以涂一层特氟隆。垫板的尺寸还应当充分大,以便覆盖由浸没流体占据的区域。在上述各种实施例中,光学组件16最后一个光学部件的表面总是处于浸没流体环境的状态下,从而可防止流体斑的形成(例如“水斑”)。
采用上述系统时,可以利用总的示于图7A的工艺制造半导体晶片。在步骤701中,设计工件的功能和操作性能。接着在步骤702中,按照先前的设计步骤设计具有图案的掩模(光栅),而在并列的步骤703中,用硅材料制造晶片。在步骤704中,采用上述本发明的光刻系统将步骤702设计的掩模图案曝光在步骤703中形成的晶片上。在步骤705中,组装半导体晶片(包括切割操作、焊接操作和包装操作),最后在步骤706中检验该工件。
图7B示出在制造半导体工件时,详细的流程图,示出上述步骤704的细节。在图7B的步骤711(氧化步骤)中,氧化晶片表面。在步骤712(CVD步骤)中,在晶片表面上形成绝缘膜。在步骤713(电极形成步骤)中,用蒸汽沉积法在晶片上形成电极。在步骤714(离子注入步骤)中,将离子注入到晶片中。上述步骤711-714是处理晶片期间,晶片的预处理步骤。可以按照处理要求,选择各个步骤。
在完成上述预处理步骤以后,在晶片处理的各个台上完成以下的后处理步骤。在后处理期间,首先在步骤715(光致抗蚀剂形成步骤)中,将光致抗蚀剂涂在晶片上,然后在步骤716(曝光步骤)中,曝光上述工件,将掩模(光栅)电路图案转移到晶片上。在步骤717(显影步骤)中,显影已曝光的晶片,在步骤718(腐蚀步骤)中,用腐蚀方法除去不是剩余光致抗蚀剂(已曝光的材料表面)的部分。在步骤719(光致抗蚀剂除去步骤)中,将腐蚀后留下的不需要的光致抗蚀剂除去。
重复这些预处理和后处理步骤可以形成多个电路图案。
尽管上述公开的特殊平板印刷机完全能够达到要求的目的和得到上述的优点,但是应当明白,这些具体的印刷机仅仅例示出本发明现在优选的实施例,而且不会限制权利要求书以外本文所示的结构或者设计细节。

Claims (40)

1.一种以光束曝光基板的浸没曝光设备,包括:
光学组件,所述光束透过所述光学组件照射到所述基板上;
基板座,所述基板座支撑所述基板并且可相对所述光学组件移动;以及
垫板组件,所述垫板组件可相对所述基板座移动,
其中所述基板座和所述垫板组件在从第一状态转变到第二状态的期间一起移动,所述第一状态是指浸没流体维持在所述光学组件和所述基板座之间的空间中,所述第二状态是指所述浸没流体维持在所述光学组件和所述垫板组件之间的空间中,所述光学组件在转变期间保持与所述浸没流体接触。
2.如权利要求1所述的浸没曝光设备,其中所述基板座和所述垫板组件以彼此相当接近的配置状态进行移动,致使所述浸没流体实质上维持在直接位于所述光学组件下方的空间中。
3.如权利要求2所述的浸没曝光设备,其中所述基板座和所述垫板组件实质上同时移动。
4.如权利要求2所述的浸没曝光设备,其中当保持所述第一状态时,所述基板和所述垫板组件朝向彼此相对地移动,致使所述基板座和所述垫板组件彼此相当接近地配置。
5.如权利要求1所述的浸没曝光设备,其中所述垫板组件代替所述基板座而与所述光学组件相向地定位,以当所述基板座远离所述光学组件下方移动时,实质上维持所述浸没流体在所述光学组件下方的空间中。
6.如权利要求1所述的浸没曝光设备,其中在所述基板座远离所述光学组件下方移动之前,所述基板座和所述垫板组件相对地倾斜及/或在垂直方向移动。
7.如权利要求1所述的浸没曝光设备,其中所述垫板组件包括与所述基板座不同的载台。
8.如权利要求1所述的浸没曝光设备,其中在由所述基板座支撑的所述基板的曝光期间,所述垫板组件远离所述光学组件下方地定位。
9.如权利要求1所述的浸没曝光设备,其中在所述转变期间,所述基板座和所述垫板组件形成实质上连续的表面。
10.如权利要求1所述的浸没曝光设备,进一步包括:基板更换系统,所述基板更换系统配置成在所述第二状态中更换处在所述基板座上的基板。
11.如权利要求10所述的浸没曝光设备,进一步包括:准直系统,所述准直系统配置成执行由更换而支撑在所述基板座上的基板的准直。
12.一种以光束曝光基板的浸没曝光设备,包括:
光学组件,所述光束透过所述光学组件照射到所述基板上;
第一载台,所述第一载台支撑所述基板并且可相对所述光学组件移动;以及
第二载台,所述第二载台可相对所述第一载台移动,
其中所述第一载台和所述第二载台在从第一状态转变到第二状态的期间一起移动,所述第一状态是指浸没流体维持在所述光学组件和所述第一载台与所述第二载台中的一个载台之间的空间中,所述第二状态是指所述浸没流体维持在所述光学组件和所述第一载台与所述第二载台中的另一个载台之间的空间中,所述光学组件在转变期间保持与所述浸没流体接触。
13.如权利要求12所述的浸没曝光设备,其中所述第一载台和所述第二载台以彼此相当接近的配置状态进行移动,致使所述浸没流体实质上维持在直接位于所述光学组件下方的空间中。
14.如权利要求13所述的浸没曝光设备,其中所述第一载台和所述第二载台实质上同时移动。
15.如权利要求13所述的浸没曝光设备,其中当保持所述第一状态时,所述第一载台和所述第二载台朝向彼此地相对移动,致使所述第一载台和所述第二载台彼此相当接近地配置。
16.如权利要求12所述的浸没曝光设备,其中所述第二载台代替所述第一载台而与所述光学组件相向地定位,以当所述第一载台远离所述光学组件下方地移动时,实质上维持所述浸没流体在所述光学组件下方的空间中。
17.如权利要求12所述的浸没曝光设备,其中在所述第一载台远离所述光学组件下方地移动之前,所述第一载台和所述第二载台相对地倾斜及/或在垂直方向移动。
18.如权利要求12所述的浸没曝光设备,其中在由所述第一载台支撑的所述基板的曝光期间,所述第二载台远离所述光学组件下方地定位。
19.如权利要求12所述的浸没曝光设备,进一步包括:基板更换系统,所述基板更换系统配置成在所述第二状态中更换处在所述第一载台上的基板。
20.如权利要求19所述的浸没曝光设备,进一步包括:准直系统,所述准直系统配置成执行由更换而支撑在所述第一载台上的基板的准直。
21.一种以光束曝光基板的浸没曝光方法,包括如下步骤:
将所述基板放置在基板座上;
透过光学组件和浸没流体将所述光束照射至位于所述基板座上的所述基板;以及
当保持所述光学组件和所述浸没流体之间接触时,将所述基板座和垫板组件沿着彼此进行移动,以便从第一状态转变成第二状态,所述基板座和所述垫板组件能够相对地移动,所述第一状态是指所述浸没流体维持在所述光学组件和所述基板座之间的空间中,所述第二状态是指所述浸没流体维持在所述光学组件和所述垫板组件之间的空间中。
22.如权利要求21所述的浸没曝光方法,其中所述基板座和所述垫板组件以彼此相当接近的配置状态进行移动,致使所述浸没流体实质上维持在直接位于所述光学组件下方的空间中。
23.如权利要求22所述的浸没曝光方法,其中所述基板座和所述垫板组件实质上同时移动。
24.如权利要求22所述的浸没曝光方法,其中当保持所述第一状态时,所述基板和所述垫板组件朝向彼此相对地移动,致使所述基板座和所述垫板组件彼此相当接近地配置。
25.如权利要求21所述的浸没曝光方法,其中所述垫板组件代替所述基板座而与所述光学组件相向地定位,以当所述基板座远离所述光学组件下方地移动时,实质上维持所述浸没流体在所述光学组件下方的空间中。
26.如权利要求21所述的浸没曝光方法,其中在所述基板座远离所述光学组件下方地移动之前,所述基板座和所述垫板组件相对地倾斜及/或在垂直方向移动。
27.如权利要求21所述的浸没曝光方法,其中所述垫板组件包括与所述基板座不同的载台。
28.如权利要求21所述的浸没曝光方法,其中在由所述基板座支撑的所述基板的曝光期间,所述垫板组件远离所述光学组件下方地定位。
29.如权利要求21所述的浸没曝光方法,其中在所述转变期间,所述基板座和所述垫板组件形成实质上连续的表面。
30.如权利要求21所述的浸没曝光方法,进一步包括如下步骤:配置基板更换系统以在所述第二状态中更换处在所述基板座上的基板。
31.如权利要求30所述的浸没曝光方法,进一步包括如下步骤:配置准直系统以执行由更换而支撑在所述基板座上的基板的准直。
32.一种以光束曝光基板的浸没曝光方法,包括如下步骤:
将所述基板放置在第一载台上;
透过光学组件和浸没流体将所述光束照射至位于所述第一载台上的所述基板;以及
当保持所述光学组件和所述浸没流体之间接触时,将所述第一载台和第二载台沿着彼此移动,以便从第一状态转变成第二状态,所述第一载台和所述第二载台能够相对地移动,所述第一状态是指所述浸没流体维持在所述光学组件和所述第一载台与所述第二载台中的一个载台之间的空间中,所述第二状态是指所述浸没流体维持在所述光学组件和所述第一载台与所述第二载台中的另一个载台之间的空间中。
33.如权利要求32所述的浸没曝光方法,其中所述第一载台和所述第二载台以彼此相当接近的配置状态进行移动,致使所述浸没流体实质上维持在直接位于所述光学组件下方的空间中。
34.如权利要求33所述的浸没曝光方法,其中所述第一载台和所述第二载台实质上同时移动。
35.如权利要求33所述的浸没曝光方法,其中当保持所述第一状态时,所述第一载台和所述第二载台朝向彼此相对地移动,致使所述第一载台和所述第二载台彼此相当接近地配置。
36.如权利要求32所述的浸没曝光方法,其中所述第二载台代替所述第一载台而与所述光学组件相向地定位,以当所述第一载台远离所述光学组件下方地移动时,实质上维持所述浸没流体在所述光学组件下方的空间中。
37.如权利要求32所述的浸没曝光方法,其中在所述第一载台远离所述光学组件下方地移动之前,所述第一载台和所述第二载台相对地倾斜及/或在垂直方向移动。
38.如权利要求32所述的浸没曝光方法,其中在由所述第一载台支撑的所述基板的曝光期间,所述第二载台远离所述光学组件下方地定位。
39.如权利要求32所述的浸没曝光方法,进一步包括如下步骤:配置基板更换系统以在所述第二状态中更换处在所述第一载台上的基板。
40.如权利要求39所述的浸没曝光方法,进一步包括如下步骤:配置准直系统以执行由更换而支撑在所述第一载台上的基板的准直。
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