JP5510596B2 - 液浸リソグラフィ装置、デバイス製造方法 - Google Patents
液浸リソグラフィ装置、デバイス製造方法 Download PDFInfo
- Publication number
- JP5510596B2 JP5510596B2 JP2013127364A JP2013127364A JP5510596B2 JP 5510596 B2 JP5510596 B2 JP 5510596B2 JP 2013127364 A JP2013127364 A JP 2013127364A JP 2013127364 A JP2013127364 A JP 2013127364A JP 5510596 B2 JP5510596 B2 JP 5510596B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- stage
- pad
- optical member
- immersion exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000671 immersion lithography Methods 0.000 title description 18
- 230000003287 optical effect Effects 0.000 claims description 157
- 238000007654 immersion Methods 0.000 claims description 126
- 239000000758 substrate Substances 0.000 claims description 111
- 238000000034 method Methods 0.000 claims description 39
- 239000007788 liquid Substances 0.000 claims description 23
- 230000007704 transition Effects 0.000 claims 10
- 230000001678 irradiating effect Effects 0.000 claims 2
- 239000012530 fluid Substances 0.000 description 68
- 238000001459 lithography Methods 0.000 description 24
- 238000005286 illumination Methods 0.000 description 15
- 230000007613 environmental effect Effects 0.000 description 12
- 238000013461 design Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 238000012423 maintenance Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
- G03F7/2055—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser for the production of printing plates; Exposure of liquid photohardening compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
液浸システムにおいて現時点で考えられているのは、液浸流体をギャップから除去して、ウェハが交換された後に再び満たすというものである。より具体的には、ウェハが交換される際には、ギャップへの流体の供給が停止され、流体がギャップから除去され(例えば真空によって)、古いウェハが取り出され、新しいウェハが位置決めされて光学アセンブリの下方に置かれ、その後、ギャップは新鮮な液浸流体で再び満たされる。上記の全てのステップ(工程)が完了した後、新しいウェハの露光が開始されることができる。
許容される範囲において、上記米国特許及び特許公開公報に記載の日本国特許出願における開示をここに援用して本文の記載の一部とする。
異なる実施形態において、環境システム26は、スプレーノズル、動電スポンジ、多孔性の材料などを用いて、液浸流体をギャップに供給及び/又は噴射し、真空ポンプやスポンジなどを用いてギャップから液浸流体を除去する。環境システム26の設計は変更することができる。例えば、ギャップの位置又はその近くの位置において、一点もしくはそれより多くの地点から液浸流体を噴射することができる。さらに液浸流体システムは、ワークピース30、ギャップ及び/若しくは光学アセンブリ16の端部の位置又はそれらの近くの位置における一点もしくはそれより多くの地点で、液浸流体を除去すること及び/又は排出することを補助することができる。様々な環境システムについてのさらなる詳細に関しては、2003年4月9日に出願された”液浸リソグラフィ流体制御システム(Immersion Lithography Fluid Control System)”と題する米国仮出願第60/462,142号、2003年4月10日に出願された”液浸リソグラフィ用真空環状システム及びウィック環状システム(Vacuum Ring System and Wick Ring System for Immersion Lithography)”と題する米国仮出願第60/462,112号及び2004年2月2日に出願された” 液浸リソグラフィ用のノズルデザイン(Nozzle Design for Immersion Lithography)”と題する米国仮出願第60/541/329号が参照され、さらにこれらは全てここに援用して本文の記載の一部とする。
工程702で設計されたマスクパターンは、工程704において、本発明に従ってこれまでに記載したフォトリソグラフィシステムによって、工程703で製造されたウェハ上に露光される。工程705において、半導体ワークピースは組み立てられ(ダイシング工程、ボンディング工程及びパッケージング工程を含む)、最終的に、ワークピースは工程606において検査される。
Claims (44)
- 光ビームで基板を露光する液浸露光装置であって、
前記基板に照射される前記光ビームが通過する光学部材と、
前記基板を保持し、前記光学部材に対して相対移動可能な基板テーブルと、
独立して前記基板テーブルに対し相対移動可能であり、前記光学部材の下から離れて移動可能であるパッドと、を備え、
前記光学部材の下から離れて配置された前記パッドが前記光学部材の下に配置された前記基板テーブルに接近するように前記基板テーブルに対して相対移動されるとともに、前記光学部材と前記基板テーブルとの間の空間に液浸液体が維持される第1状態から、前記光学部材と前記パッドとの間の空間に前記液浸液体が維持される第2状態への遷移において、前記接近した前記基板テーブル及び前記パッドが移動され、前記遷移中、前記光学部材が前記液浸液体と接触し続ける。 - 請求項1に記載の液浸露光装置において、
前記基板テーブル及び前記パッドは、前記光学部材の下の空間に前記液浸液体が実質的に維持されるように互いに近接した状態で移動される。 - 請求項1又は2に記載の液浸露光装置において、
前記基板テーブル及び前記パッドは、実質的に同時に移動される。 - 請求項1〜3のいずれか一項に記載の液浸露光装置において、
前記基板テーブルと前記パッドとが互いに近接して配置されるように、前記第1状態を維持しつつ前記基板テーブルと前記パッドとが相対移動して互いに近づく。 - 請求項1〜4のいずれか一項に記載の液浸露光装置において、
前記基板テーブルが前記光学部材の下から離れるとき、前記基板テーブルの代わりに前記パッドが前記光学部材に対向して配置されて前記液浸液体を前記光学部材の下の空間に実質的に維持する。 - 請求項1〜5のいずれか一項に記載の液浸露光装置において、
前記基板テーブルが前記光学部材の下から離れる前に、前記基板テーブルと前記パッドとは相対的に傾斜及び/又は鉛直方向に移動される。 - 請求項1〜6のいずれか一項に記載の液浸露光装置において、
前記パッドは、前記基板テーブルと異なるステージを含む。 - 請求項1〜7のいずれか一項に記載の液浸露光装置において、
前記パッドは、前記基板テーブルに載置された前記基板の露光中に、前記光学部材の下から離れて配置される。 - 請求項1〜8のいずれか一項に記載の液浸露光装置において、
前記基板テーブルと前記パッドとは、前記遷移中において実質的な連続面を形成する。 - 請求項1〜9のいずれか一項に記載の液浸露光装置において、
前記第2状態において、前記基板テーブルに載置された基板を交換する基板交換システムをさらに備える。 - 請求項10に記載の液浸露光装置において、
前記交換によって前記基板テーブルに載置された基板のアライメントを行うアライメントシステムをさらに備える。 - 請求項1〜11のいずれか一項に記載の液浸露光装置を用いて基板を露光することと、
露光された前記基板を現像することと、を含む
デバイス製造方法。 - 光ビームで基板を露光する液浸露光装置であって、
前記基板に照射される前記光ビームが通過する光学部材と、
前記基板を保持し、前記光学部材に対して相対移動可能な基板ステージと、
独立して前記基板ステージに対し相対移動可能であり、前記光学部材の下から離れて移動可能であるパッドステージと、を備え、
前記光学部材の下から離れて配置された前記パッドステージが前記光学部材の下に配置された前記基板ステージに接近するように前記基板ステージに対して相対移動されるとともに、前記光学部材と前記基板ステージとの間の空間に液浸液体が維持される第1状態から、前記光学部材と前記パッドステージとの間の空間に前記液浸液体が維持される第2状態への遷移において、前記接近した前記基板ステージ及び前記パッドステージが移動され、前記遷移中、前記光学部材が前記液浸液体と接触し続ける。 - 請求項13に記載の液浸露光装置において、
前記基板ステージ及び前記パッドステージは、前記光学部材の下の空間に前記液浸液体が実質的に維持されるように互いに近接した状態で移動される。 - 請求項13又は14に記載の液浸露光装置において、
前記基板ステージ及び前記パッドステージは、実質的に同時に移動される。 - 請求項13〜15のいずれか一項に記載の液浸露光装置において、
前記基板ステージと前記パッドステージとが互いに近接して配置されるように、前記第1状態を維持しつつ前記基板ステージと前記パッドとが相対移動して互いに近づく - 請求項13〜16のいずれか一項に記載の液浸露光装置において、
前記基板ステージが前記光学部材の下から離れるとき、前記基板ステージの代わりに前記パッドステージが前記光学部材に対向して配置されて前記液浸液体を前記光学部材の下の空間に実質的に維持する。 - 請求項13〜17のいずれか一項に記載の液浸露光装置において、
前記基板ステージが前記光学部材の下から離れる前に、前記基板ステージと前記パッドステージとは相対的に傾斜及び/又は鉛直方向に移動される。 - 請求項13〜18のいずれか一項に記載の液浸露光装置において、
前記パッドステージは、前記基板ステージに載置された前記基板の露光中に、前記光学部材の下から離れて配置される。 - 請求項13〜19のいずれか一項に記載の液浸露光装置において、
前記第2状態において、前記基板ステージに載置された基板を交換する基板交換システムをさらに備える。 - 請求項20に記載の液浸露光装置において、
前記交換によって前記基板ステージに載置された基板のアライメントを行うアライメントシステムをさらに備える。 - 請求項13〜21のいずれか一項に記載の液浸露光装置を用いて基板を露光することと、
露光された前記基板を現像することと、を含む
デバイス製造方法。 - 光ビームで基板を露光する液浸露光方法であって、
基板テーブルに前記基板を載置することと、
前記基板テーブル上に載置された前記基板を、光学部材及び液浸液体を介して前記光ビームで照射することと、
前記光学部材の下から離れて配置された前記パッドが前記光学部材の下に配置された前記基板テーブルに接近して配置されるように、前記基板テーブルに対して独立して相対移動可能な前記パッドを前記基板テーブルに対して移動することと、
前記光学部材と前記基板テーブルとの間の空間に液浸液体が維持される第1状態から、前記光学部材と前記パッドとの間の空間に前記液浸液体が維持される第2状態に遷移するように、前記接近した前記基板テーブル及び前記パッドを移動することとを含み、
前記遷移中、前記光学部材が前記液浸液体と接触し続ける。 - 請求項23に記載の液浸露光方法において、
前記基板テーブル及び前記パッドは、前記光学部材の下の空間に前記液浸液体が実質的に維持されるように互いに近接した状態で移動される。 - 請求項23又は24に記載の液浸露光方法において、
前記基板テーブル及び前記パッドは、実質的に同時に移動される。 - 請求項23〜25のいずれか一項に記載の液浸露光方法において、
前記基板テーブルと前記パッドとが互いに近接して配置されるように、前記第1状態を維持しつつ前記基板テーブルと前記パッドとが相対移動して互いに近づく。 - 請求項23〜26のいずれか一項に記載の液浸露光方法において、
前記基板テーブルが前記光学部材の下から離れるとき、前記基板テーブルの代わりに前記パッドが前記光学部材に対向して配置されて前記液浸液体を前記光学部材の下の空間に実質的に維持する。 - 請求項23〜27のいずれか一項に記載の液浸露光方法において、
前記基板テーブルが前記光学部材の下から離れる前に、前記基板テーブルと前記パッドとは相対的に傾斜及び/又は鉛直方向に移動される。 - 請求項23〜28のいずれか一項に記載の液浸露光方法において、
前記パッドは、前記基板テーブルと異なるステージを含む。 - 請求項23〜29のいずれか一項に記載の液浸露光方法において、
前記パッドは、前記基板テーブルに載置された前記基板の露光中に、前記光学部材の下から離れて配置される。 - 請求項23〜30のいずれか一項に記載の液浸露光方法において、
前記基板テーブルと前記パッドとは、前記遷移中において実質的な連続面を形成する。 - 請求項23〜31のいずれか一項に記載の液浸露光方法において、
前記第2状態において、前記基板テーブルに載置された前記基板を交換することをさらに含む。 - 請求項32に記載の液浸露光方法において、
前記交換によって前記基板テーブルに載置された基板のアライメントを行うことをさらに含む。 - 請求項23〜33のいずれか一項に記載の液浸露光方法を用いて基板を露光することと、
露光された前記基板を現像することと、を含む
デバイス製造方法。 - 光ビームで基板を露光する液浸露光方法であって、
基板ステージに前記基板を載置することと、
前記基板ステージ上に載置された前記基板を、光学部材及び液浸液体を介して前記光ビームで照射することと、
前記光学部材の下から離れて配置された前記パッドステージが前記光学部材の下に配置された前記基板ステージに接近して配置されるように、前記基板ステージに対して独立して相対移動可能な前記パッドステージを前記基板ステージに対して移動することと、
前記光学部材と前記基板ステージとの間の空間に液浸液体が維持される第1状態から、前記光学部材と前記パッドステージとの間の空間に前記液浸液体が維持される第2状態に遷移するように、前記接近した前記基板ステージ及び前記パッドステージを移動することとを含み、
前記遷移中、前記光学部材が前記液浸液体と接触し続ける。 - 請求項35に記載の液浸露光方法において、
前記基板ステージ及び前記パッドステージは、前記光学部材の下に前記液浸液体が実質的に維持されるように互いに近接した状態で移動される。 - 請求項35又は36に記載の液浸露光方法において、
前記基板ステージ及び前記パッドステージは、実質的に同時に移動される。 - 請求項35〜37のいずれか一項に記載の液浸露光方法において、
前記基板ステージと前記パッドステージとが互いに近接して配置されるように、前記第1状態を維持しつつ前記基板ステージと前記パッドステージとが相対移動して互いに近づく。 - 請求項35〜38のいずれか一項に記載の液浸露光方法において、
前記基板ステージが前記光学部材の下から離れるとき、前記基板ステージの代わりに前記パッドステージが前記光学部材に対向して配置されて前記液浸液体を前記光学部材の下の空間に実質的に維持する。 - 請求項35〜39のいずれか一項に記載の液浸露光方法において、
前記基板ステージが前記光学部材の下から離れる前に、前記基板ステージと前記パッドステージとは相対的に傾斜及び/又は鉛直方向に移動される。 - 請求項35〜40のいずれか一項に記載の液浸露光方法において、
前記パッドステージは、前記基板ステージに載置された前記基板の露光中に、前記光学部材の下から離れて配置される。 - 請求項35〜41のいずれか一項に記載の液浸露光方法において、
前記第2状態において、前記基板ステージに載置された前記基板を交換することをさらに含む。 - 請求項42に記載の液浸露光方法において、
前記交換によって前記基板ステージに載置された基板のアライメントを行うことをさらに含む。 - 請求項35〜43のいずれか一項に記載の液浸露光方法を用いて基板を露光することと、
露光された前記基板を現像することと、を含む
デバイス製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46249903P | 2003-04-11 | 2003-04-11 | |
US60/462,499 | 2003-04-11 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011112549A Division JP5440551B2 (ja) | 2003-04-11 | 2011-05-19 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013191884A JP2013191884A (ja) | 2013-09-26 |
JP5510596B2 true JP5510596B2 (ja) | 2014-06-04 |
Family
ID=33159850
Family Applications (12)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006506525A Expired - Fee Related JP4315198B2 (ja) | 2003-04-11 | 2004-03-17 | 液浸液体を光学アセンブリ下に維持するリソグラフィ装置及び液浸液体維持方法並びにそれらを用いるデバイス製造方法 |
JP2008111219A Expired - Fee Related JP4775402B2 (ja) | 2003-04-11 | 2008-04-22 | 液浸露光装置、液浸露光方法、デバイス製造方法、及び液浸露光装置の製造方法 |
JP2010012365A Expired - Fee Related JP4952804B2 (ja) | 2003-04-11 | 2010-01-22 | 液浸露光装置、及び液浸露光方法 |
JP2011112549A Expired - Fee Related JP5440551B2 (ja) | 2003-04-11 | 2011-05-19 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
JP2011266300A Expired - Fee Related JP5556798B2 (ja) | 2003-04-11 | 2011-12-05 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
JP2011266301A Expired - Fee Related JP5660016B2 (ja) | 2003-04-11 | 2011-12-05 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
JP2012078264A Expired - Fee Related JP5556840B2 (ja) | 2003-04-11 | 2012-03-29 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
JP2013127364A Expired - Lifetime JP5510596B2 (ja) | 2003-04-11 | 2013-06-18 | 液浸リソグラフィ装置、デバイス製造方法 |
JP2014136910A Expired - Fee Related JP5862716B2 (ja) | 2003-04-11 | 2014-07-02 | 液浸リソグラフィ装置、デバイス製造方法 |
JP2015010863A Expired - Fee Related JP5900669B2 (ja) | 2003-04-11 | 2015-01-23 | 液浸リソグラフィ装置、デバイス製造方法 |
JP2015127873A Expired - Fee Related JP6028838B2 (ja) | 2003-04-11 | 2015-06-25 | 液浸リソグラフィ装置、デバイス製造方法 |
JP2016026294A Expired - Fee Related JP6090486B2 (ja) | 2003-04-11 | 2016-02-15 | 液浸リソグラフィ装置、デバイス製造方法 |
Family Applications Before (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006506525A Expired - Fee Related JP4315198B2 (ja) | 2003-04-11 | 2004-03-17 | 液浸液体を光学アセンブリ下に維持するリソグラフィ装置及び液浸液体維持方法並びにそれらを用いるデバイス製造方法 |
JP2008111219A Expired - Fee Related JP4775402B2 (ja) | 2003-04-11 | 2008-04-22 | 液浸露光装置、液浸露光方法、デバイス製造方法、及び液浸露光装置の製造方法 |
JP2010012365A Expired - Fee Related JP4952804B2 (ja) | 2003-04-11 | 2010-01-22 | 液浸露光装置、及び液浸露光方法 |
JP2011112549A Expired - Fee Related JP5440551B2 (ja) | 2003-04-11 | 2011-05-19 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
JP2011266300A Expired - Fee Related JP5556798B2 (ja) | 2003-04-11 | 2011-12-05 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
JP2011266301A Expired - Fee Related JP5660016B2 (ja) | 2003-04-11 | 2011-12-05 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
JP2012078264A Expired - Fee Related JP5556840B2 (ja) | 2003-04-11 | 2012-03-29 | 液浸露光装置、液浸露光方法、及びデバイス製造方法 |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014136910A Expired - Fee Related JP5862716B2 (ja) | 2003-04-11 | 2014-07-02 | 液浸リソグラフィ装置、デバイス製造方法 |
JP2015010863A Expired - Fee Related JP5900669B2 (ja) | 2003-04-11 | 2015-01-23 | 液浸リソグラフィ装置、デバイス製造方法 |
JP2015127873A Expired - Fee Related JP6028838B2 (ja) | 2003-04-11 | 2015-06-25 | 液浸リソグラフィ装置、デバイス製造方法 |
JP2016026294A Expired - Fee Related JP6090486B2 (ja) | 2003-04-11 | 2016-02-15 | 液浸リソグラフィ装置、デバイス製造方法 |
Country Status (10)
Country | Link |
---|---|
US (18) | US7372538B2 (ja) |
EP (8) | EP2887143B1 (ja) |
JP (12) | JP4315198B2 (ja) |
KR (15) | KR101498405B1 (ja) |
CN (3) | CN101002140B (ja) |
HK (7) | HK1087782A1 (ja) |
IL (5) | IL170735A (ja) |
SG (12) | SG139736A1 (ja) |
TW (16) | TWI648589B (ja) |
WO (1) | WO2004090577A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015172787A (ja) * | 2003-04-11 | 2015-10-01 | 株式会社ニコン | 液浸リソグラフィ装置、デバイス製造方法 |
Families Citing this family (210)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1420299B1 (en) | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1571698A4 (en) | 2002-12-10 | 2006-06-21 | Nikon Corp | EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD |
EP1571694A4 (en) | 2002-12-10 | 2008-10-15 | Nikon Corp | EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE |
KR20120127755A (ko) | 2002-12-10 | 2012-11-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
KR20130010039A (ko) | 2002-12-10 | 2013-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
EP3301511A1 (en) | 2003-02-26 | 2018-04-04 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
JP4353179B2 (ja) | 2003-03-25 | 2009-10-28 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
ATE426914T1 (de) | 2003-04-07 | 2009-04-15 | Nikon Corp | Belichtungsgerat und verfahren zur herstellung einer vorrichtung |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
KR101409565B1 (ko) | 2003-04-10 | 2014-06-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
SG10201604762UA (en) | 2003-04-10 | 2016-08-30 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
SG10201803122UA (en) | 2003-04-11 | 2018-06-28 | Nikon Corp | Immersion lithography apparatus and device manufacturing method |
ATE542167T1 (de) | 2003-04-17 | 2012-02-15 | Nikon Corp | Lithographisches immersionsgerät |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI518742B (zh) | 2003-05-23 | 2016-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
TWI614794B (zh) | 2003-05-23 | 2018-02-11 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
KR20060009956A (ko) | 2003-05-28 | 2006-02-01 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
US7213963B2 (en) * | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101520591B1 (ko) | 2003-06-13 | 2015-05-14 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
CN101436003B (zh) | 2003-06-19 | 2011-08-17 | 株式会社尼康 | 曝光装置及器件制造方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP2853943B1 (en) | 2003-07-08 | 2016-11-16 | Nikon Corporation | Wafer table for immersion lithography |
EP1646075B1 (en) | 2003-07-09 | 2011-06-15 | Nikon Corporation | Exposure apparatus and device manufacturing method |
WO2005006418A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
WO2005006416A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 結合装置、露光装置、及びデバイス製造方法 |
JP4524669B2 (ja) | 2003-07-25 | 2010-08-18 | 株式会社ニコン | 投影光学系の検査方法および検査装置 |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
KR101599649B1 (ko) * | 2003-07-28 | 2016-03-14 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101380989B1 (ko) | 2003-08-29 | 2014-04-04 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP4288426B2 (ja) | 2003-09-03 | 2009-07-01 | 株式会社ニコン | 液浸リソグラフィのための流体の供給装置及び方法 |
JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR101441840B1 (ko) | 2003-09-29 | 2014-11-04 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
KR101203028B1 (ko) | 2003-10-08 | 2012-11-21 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광 방법, 디바이스 제조 방법 |
KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
TW200514138A (en) | 2003-10-09 | 2005-04-16 | Nippon Kogaku Kk | Exposure equipment and exposure method, manufacture method of component |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101394764B1 (ko) | 2003-12-03 | 2014-05-27 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법, 그리고 광학 부품 |
KR101547037B1 (ko) | 2003-12-15 | 2015-08-24 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005071491A2 (en) * | 2004-01-20 | 2005-08-04 | Carl Zeiss Smt Ag | Exposure apparatus and measuring device for a projection lens |
US7589822B2 (en) * | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
KR101227211B1 (ko) | 2004-02-03 | 2013-01-28 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
KR101851511B1 (ko) | 2004-03-25 | 2018-04-23 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005103788A1 (de) * | 2004-04-26 | 2005-11-03 | Carl Zeiss Smt Ag | Verfahren zum verbinden eines optischen elements mit einer haltestruktur |
US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100594430C (zh) | 2004-06-04 | 2010-03-17 | 卡尔蔡司Smt股份公司 | 用于测量光学成像系统的图像质量的系统 |
EP2966670B1 (en) | 2004-06-09 | 2017-02-22 | Nikon Corporation | Exposure apparatus and device manufacturing method |
CN1965389B (zh) | 2004-06-09 | 2011-08-10 | 尼康股份有限公司 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101433491B1 (ko) | 2004-07-12 | 2014-08-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
WO2006013806A1 (ja) * | 2004-08-03 | 2006-02-09 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
TW200615716A (en) * | 2004-08-05 | 2006-05-16 | Nikon Corp | Stage device and exposure device |
EP1801853A4 (en) | 2004-08-18 | 2008-06-04 | Nikon Corp | EXPOSURE DEVICE AND COMPONENT MANUFACTURING METHOD |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1806772B1 (en) | 2004-10-15 | 2014-08-06 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7119876B2 (en) | 2004-10-18 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100533662C (zh) | 2004-11-01 | 2009-08-26 | 株式会社尼康 | 曝光装置及器件制造方法 |
JP4517354B2 (ja) * | 2004-11-08 | 2010-08-04 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
US7583357B2 (en) | 2004-11-12 | 2009-09-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411657B2 (en) | 2004-11-17 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI588872B (zh) | 2004-11-18 | 2017-06-21 | 尼康股份有限公司 | Position measurement method, position control method, measurement method, loading method, exposure method and exposure apparatus, and device manufacturing method |
EP1840943A4 (en) * | 2004-11-25 | 2010-04-21 | Nikon Corp | MOBILE BODY SYSTEM, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS |
US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2006062065A1 (ja) | 2004-12-06 | 2006-06-15 | Nikon Corporation | メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法 |
US7196770B2 (en) | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
US7365827B2 (en) | 2004-12-08 | 2008-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US7403261B2 (en) | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) * | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7491661B2 (en) | 2004-12-28 | 2009-02-17 | Asml Netherlands B.V. | Device manufacturing method, top coat material and substrate |
US7405805B2 (en) | 2004-12-28 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060147821A1 (en) | 2004-12-30 | 2006-07-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG124359A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR20160135859A (ko) | 2005-01-31 | 2016-11-28 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
CN102385260B (zh) | 2005-02-10 | 2014-11-05 | Asml荷兰有限公司 | 浸没液体、曝光装置及曝光方法 |
US8018573B2 (en) | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7224431B2 (en) | 2005-02-22 | 2007-05-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7378025B2 (en) | 2005-02-22 | 2008-05-27 | Asml Netherlands B.V. | Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method |
US7428038B2 (en) | 2005-02-28 | 2008-09-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684010B2 (en) | 2005-03-09 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing |
US7330238B2 (en) | 2005-03-28 | 2008-02-12 | Asml Netherlands, B.V. | Lithographic apparatus, immersion projection apparatus and device manufacturing method |
EP1865540A4 (en) * | 2005-03-30 | 2010-03-17 | Nikon Corp | EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE PRODUCTION METHOD |
US7411654B2 (en) | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7291850B2 (en) | 2005-04-08 | 2007-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
KR101479392B1 (ko) * | 2005-04-28 | 2015-01-05 | 가부시키가이샤 니콘 | 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법 |
US7317507B2 (en) | 2005-05-03 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7751027B2 (en) | 2005-06-21 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7652746B2 (en) | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7474379B2 (en) | 2005-06-28 | 2009-01-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7468779B2 (en) | 2005-06-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7583358B2 (en) | 2005-07-25 | 2009-09-01 | Micron Technology, Inc. | Systems and methods for retrieving residual liquid during immersion lens photolithography |
EP1918983A4 (en) | 2005-08-05 | 2010-03-31 | Nikon Corp | STAGE EQUIPMENT AND EXPOSURE DEVICE |
US8054445B2 (en) | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2007029829A1 (ja) * | 2005-09-09 | 2007-03-15 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
US7417710B2 (en) * | 2005-09-26 | 2008-08-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4164508B2 (ja) * | 2005-10-04 | 2008-10-15 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3997245B2 (ja) * | 2005-10-04 | 2007-10-24 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3997244B2 (ja) * | 2005-10-04 | 2007-10-24 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US7411658B2 (en) | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2007055237A1 (ja) * | 2005-11-09 | 2007-05-18 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7656501B2 (en) | 2005-11-16 | 2010-02-02 | Asml Netherlands B.V. | Lithographic apparatus |
US7804577B2 (en) | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7633073B2 (en) | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
US7420194B2 (en) | 2005-12-27 | 2008-09-02 | Asml Netherlands B.V. | Lithographic apparatus and substrate edge seal |
US7839483B2 (en) | 2005-12-28 | 2010-11-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a control system |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8472004B2 (en) * | 2006-01-18 | 2013-06-25 | Micron Technology, Inc. | Immersion photolithography scanner |
EP2963498B8 (en) * | 2006-01-19 | 2017-07-26 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
EP2003680B1 (en) * | 2006-02-21 | 2013-05-29 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
US8045134B2 (en) | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
US7760324B2 (en) * | 2006-03-20 | 2010-07-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
US8027019B2 (en) | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2535744A3 (en) * | 2006-04-03 | 2013-10-09 | Nikon Corporation | Incidence surfaces and optical windows that are solvophobic to immersion liquids used in an immersion microlithography system |
US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
CN100456138C (zh) * | 2006-06-13 | 2009-01-28 | 上海微电子装备有限公司 | 浸没式光刻机浸液流场维持系统 |
US20080094592A1 (en) * | 2006-08-31 | 2008-04-24 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
US7872730B2 (en) | 2006-09-15 | 2011-01-18 | Nikon Corporation | Immersion exposure apparatus and immersion exposure method, and device manufacturing method |
CN100468212C (zh) * | 2006-09-22 | 2009-03-11 | 上海微电子装备有限公司 | 双台定位交换系统 |
KR101419196B1 (ko) * | 2006-09-29 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법 |
US20080158531A1 (en) | 2006-11-15 | 2008-07-03 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7973910B2 (en) | 2006-11-17 | 2011-07-05 | Nikon Corporation | Stage apparatus and exposure apparatus |
JP5089143B2 (ja) * | 2006-11-20 | 2012-12-05 | キヤノン株式会社 | 液浸露光装置 |
US8045135B2 (en) | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
US7728952B2 (en) * | 2007-01-25 | 2010-06-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for closing plate take-over in immersion lithography |
US8237911B2 (en) * | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US9013672B2 (en) | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
JP2009033111A (ja) * | 2007-05-28 | 2009-02-12 | Nikon Corp | 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 |
US8279399B2 (en) | 2007-10-22 | 2012-10-02 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
KR101470671B1 (ko) | 2007-11-07 | 2014-12-08 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법 |
WO2009078443A1 (ja) * | 2007-12-17 | 2009-06-25 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
US8451425B2 (en) | 2007-12-28 | 2013-05-28 | Nikon Corporation | Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method |
JP2009182110A (ja) * | 2008-01-30 | 2009-08-13 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
US8610873B2 (en) | 2008-03-17 | 2013-12-17 | Nikon Corporation | Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate |
US20100039628A1 (en) * | 2008-03-19 | 2010-02-18 | Nikon Corporation | Cleaning tool, cleaning method, and device fabricating method |
US8654306B2 (en) * | 2008-04-14 | 2014-02-18 | Nikon Corporation | Exposure apparatus, cleaning method, and device fabricating method |
EP2128703A1 (en) | 2008-05-28 | 2009-12-02 | ASML Netherlands BV | Lithographic Apparatus and a Method of Operating the Apparatus |
US20100053588A1 (en) * | 2008-08-29 | 2010-03-04 | Nikon Corporation | Substrate Stage movement patterns for high throughput While Imaging a Reticle to a pair of Imaging Locations |
US20100060106A1 (en) * | 2008-09-10 | 2010-03-11 | Hiwin Mikrosystem Corp. | Linear planar servomotor with spare-mover standby area |
DE102009015717B4 (de) * | 2009-03-31 | 2012-12-13 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren und System zum Erkennen einer Teilchenkontamination in einer Immersionslithographieanlage |
US8970820B2 (en) | 2009-05-20 | 2015-03-03 | Nikon Corporation | Object exchange method, exposure method, carrier system, exposure apparatus, and device manufacturing method |
US8792084B2 (en) | 2009-05-20 | 2014-07-29 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US20100294742A1 (en) * | 2009-05-22 | 2010-11-25 | Enrico Magni | Modifications to Surface Topography of Proximity Head |
NL2005207A (en) | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
US20110199591A1 (en) * | 2009-10-14 | 2011-08-18 | Nikon Corporation | Exposure apparatus, exposing method, maintenance method and device fabricating method |
WO2011055860A1 (en) | 2009-11-09 | 2011-05-12 | Nikon Corporation | Exposure apparatus, exposure method, exposure apparatus maintenance method, exposure apparatus adjustment method and device manufacturing method |
US8896810B2 (en) * | 2009-12-29 | 2014-11-25 | Globalfoundries Singapore Pte. Ltd. | Liquid immersion scanning exposure system using an immersion liquid confined within a lens hood |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
US8877080B2 (en) | 2010-10-18 | 2014-11-04 | Tokyo Electron Limited | Using vacuum ultra-violet (VUV) data in microwave sources |
US20120188521A1 (en) | 2010-12-27 | 2012-07-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium |
US20120162619A1 (en) | 2010-12-27 | 2012-06-28 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, exposing method, device fabricating method, program, and storage medium |
US9329496B2 (en) | 2011-07-21 | 2016-05-03 | Nikon Corporation | Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium |
US20130135594A1 (en) | 2011-11-25 | 2013-05-30 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, exposure method, device manufacturing method, program, and recording medium |
US20130169944A1 (en) | 2011-12-28 | 2013-07-04 | Nikon Corporation | Exposure apparatus, exposure method, device manufacturing method, program, and recording medium |
US9207549B2 (en) | 2011-12-29 | 2015-12-08 | Nikon Corporation | Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement |
JP6037732B2 (ja) * | 2012-09-03 | 2016-12-07 | オリンパス株式会社 | 浸液保持具、観察部位固定装置、及び、顕微鏡 |
US9772564B2 (en) | 2012-11-12 | 2017-09-26 | Nikon Corporation | Exposure apparatus and exposure method, and device manufacturing method |
JP6362312B2 (ja) * | 2013-09-09 | 2018-07-25 | キヤノン株式会社 | 露光装置、それを用いたデバイスの製造方法 |
US10534277B2 (en) * | 2014-03-26 | 2020-01-14 | Nikon Corporation | Movable body apparatus, exposure apparatus, manufacturing method of flat panel display, and device manufacturing method |
US11300769B2 (en) | 2014-05-29 | 2022-04-12 | Rarecyte, Inc. | Automated substrate loading |
WO2015183691A1 (en) | 2014-05-29 | 2015-12-03 | Rarecyte, Inc. | Apparatus for holding a substrate within a secondary device |
US10802260B2 (en) | 2014-05-29 | 2020-10-13 | Rarecyte, Inc. | Automated substrate loading |
US10890748B2 (en) | 2014-05-29 | 2021-01-12 | Rarecyte, Inc. | Automated substrate loading |
US11422352B2 (en) | 2014-05-29 | 2022-08-23 | Rarecyte, Inc. | Automated substrate loading |
KR102022471B1 (ko) * | 2014-09-19 | 2019-09-18 | 한화정밀기계 주식회사 | 기판 검사장치 |
US10632556B2 (en) * | 2014-11-07 | 2020-04-28 | Kiffer Industries, Inc. | Method and apparatus for eliminating cut taper |
CN106166323A (zh) * | 2015-05-19 | 2016-11-30 | 雅培心血管系统有限公司 | 囊体导管 |
KR102215539B1 (ko) * | 2015-11-20 | 2021-02-16 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 리소그래피 장치를 작동시키는 방법 |
KR102644544B1 (ko) | 2016-09-21 | 2024-03-11 | 넥스트큐어 인코포레이티드 | Siglec-15를 위한 항체 및 이의 사용 방법 |
US10948830B1 (en) | 2019-12-23 | 2021-03-16 | Waymo Llc | Systems and methods for lithography |
Family Cites Families (318)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US211920A (en) * | 1879-02-04 | Improvement in manufacture of boots | ||
GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US4026653A (en) | 1975-05-09 | 1977-05-31 | Bell Telephone Laboratories, Incorporated | Proximity printing method |
US4341164A (en) | 1980-06-13 | 1982-07-27 | Charles H. Ruble | Folding camp table |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
US4650983A (en) | 1983-11-07 | 1987-03-17 | Nippon Kogaku K. K. | Focusing apparatus for projection optical system |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6144429A (ja) | 1984-08-09 | 1986-03-04 | Nippon Kogaku Kk <Nikon> | 位置合わせ方法、及び位置合せ装置 |
US4780617A (en) | 1984-08-09 | 1988-10-25 | Nippon Kogaku K.K. | Method for successive alignment of chip patterns on a substrate |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62121417A (ja) * | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JP2940553B2 (ja) | 1988-12-21 | 1999-08-25 | 株式会社ニコン | 露光方法 |
JP2897355B2 (ja) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法,露光装置,並びに位置検出方法及び装置 |
US5121256A (en) | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
US5243195A (en) | 1991-04-25 | 1993-09-07 | Nikon Corporation | Projection exposure apparatus having an off-axis alignment system and method of alignment therefor |
JP3200874B2 (ja) | 1991-07-10 | 2001-08-20 | 株式会社ニコン | 投影露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JP3203719B2 (ja) * | 1991-12-26 | 2001-08-27 | 株式会社ニコン | 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法 |
US5469963A (en) * | 1992-04-08 | 1995-11-28 | Asyst Technologies, Inc. | Sealable transportable container having improved liner |
JPH05304072A (ja) | 1992-04-08 | 1993-11-16 | Nec Corp | 半導体装置の製造方法 |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
KR100300618B1 (ko) | 1992-12-25 | 2001-11-22 | 오노 시게오 | 노광방법,노광장치,및그장치를사용하는디바이스제조방법 |
JP3316833B2 (ja) | 1993-03-26 | 2002-08-19 | 株式会社ニコン | 走査露光方法、面位置設定装置、走査型露光装置、及び前記方法を使用するデバイス製造方法 |
JPH06208058A (ja) * | 1993-01-13 | 1994-07-26 | Olympus Optical Co Ltd | 顕微鏡対物レンズ |
US5591958A (en) | 1993-06-14 | 1997-01-07 | Nikon Corporation | Scanning exposure method and apparatus |
JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
JP3747951B2 (ja) | 1994-11-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
JP3747958B2 (ja) | 1995-04-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
US5636066A (en) | 1993-03-12 | 1997-06-03 | Nikon Corporation | Optical apparatus |
JPH09311278A (ja) | 1996-05-20 | 1997-12-02 | Nikon Corp | 反射屈折光学系 |
JP3635684B2 (ja) | 1994-08-23 | 2005-04-06 | 株式会社ニコン | 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置 |
US5534970A (en) | 1993-06-11 | 1996-07-09 | Nikon Corporation | Scanning exposure apparatus |
JP3265503B2 (ja) | 1993-06-11 | 2002-03-11 | 株式会社ニコン | 露光方法及び装置 |
JP3212199B2 (ja) | 1993-10-04 | 2001-09-25 | 旭硝子株式会社 | 平板型陰極線管 |
DE59502762D1 (de) * | 1994-01-13 | 1998-08-13 | Ims Ionen Mikrofab Syst | Teilchenoptisches abbildungssystem |
JPH07220990A (ja) * | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US7365513B1 (en) | 1994-04-01 | 2008-04-29 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US6989647B1 (en) | 1994-04-01 | 2006-01-24 | Nikon Corporation | Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device |
JP3395801B2 (ja) | 1994-04-28 | 2003-04-14 | 株式会社ニコン | 反射屈折投影光学系、走査型投影露光装置、及び走査投影露光方法 |
JP3555230B2 (ja) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
JPH07335748A (ja) | 1994-06-07 | 1995-12-22 | Miyazaki Oki Electric Co Ltd | 半導体素子の製造方法 |
US5715064A (en) * | 1994-06-17 | 1998-02-03 | International Business Machines Corporation | Step and repeat apparatus having enhanced accuracy and increased throughput |
USRE38438E1 (en) | 1994-08-23 | 2004-02-24 | Nikon Corporation | Catadioptric reduction projection optical system and exposure apparatus having the same |
JPH0883753A (ja) | 1994-09-13 | 1996-03-26 | Nikon Corp | 焦点検出方法 |
US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JPH08136475A (ja) | 1994-11-14 | 1996-05-31 | Kawasaki Steel Corp | 板状材の表面観察装置 |
JP3387075B2 (ja) | 1994-12-12 | 2003-03-17 | 株式会社ニコン | 走査露光方法、露光装置、及び走査型露光装置 |
JPH08171054A (ja) | 1994-12-16 | 1996-07-02 | Nikon Corp | 反射屈折光学系 |
US5677758A (en) | 1995-02-09 | 1997-10-14 | Mrs Technology, Inc. | Lithography System using dual substrate stages |
US5699201A (en) | 1995-03-27 | 1997-12-16 | Hewlett-Packard Co. | Low-profile, high-gain, wide-field-of-view, non-imaging optics |
US6008500A (en) | 1995-04-04 | 1999-12-28 | Nikon Corporation | Exposure apparatus having dynamically isolated reaction frame |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JP3526042B2 (ja) | 1995-08-09 | 2004-05-10 | 株式会社ニコン | 投影露光装置 |
JPH09232213A (ja) | 1996-02-26 | 1997-09-05 | Nikon Corp | 投影露光装置 |
US5964441A (en) | 1996-04-01 | 1999-10-12 | Lear Corporation | Linkage assembly with extruded hole member |
JPH103039A (ja) | 1996-06-14 | 1998-01-06 | Nikon Corp | 反射屈折光学系 |
JPH1020195A (ja) | 1996-06-28 | 1998-01-23 | Nikon Corp | 反射屈折光学系 |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
JP4029181B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置 |
DE69738910D1 (de) | 1996-11-28 | 2008-09-25 | Nikon Corp | Ausrichtvorrichtung und belichtungsverfahren |
US5815246A (en) | 1996-12-24 | 1998-09-29 | U.S. Philips Corporation | Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device |
WO1998028665A1 (en) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
JPH10209039A (ja) | 1997-01-27 | 1998-08-07 | Nikon Corp | 投影露光方法及び投影露光装置 |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JP3626504B2 (ja) | 1997-03-10 | 2005-03-09 | アーエスエム リソグラフィ ベスローテン フェンノートシャップ | 2個の物品ホルダを有する位置決め装置 |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) * | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
US5900354A (en) | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
AU9095798A (en) | 1997-09-19 | 1999-04-12 | Nikon Corporation | Stage device, a scanning aligner and a scanning exposure method, and a device manufactured thereby |
JP2000106340A (ja) | 1997-09-26 | 2000-04-11 | Nikon Corp | 露光装置及び走査露光方法、並びにステージ装置 |
JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
WO1999027568A1 (fr) * | 1997-11-21 | 1999-06-03 | Nikon Corporation | Graveur de motifs a projection et procede de sensibilisation a projection |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
JP4264676B2 (ja) | 1998-11-30 | 2009-05-20 | 株式会社ニコン | 露光装置及び露光方法 |
US6897963B1 (en) | 1997-12-18 | 2005-05-24 | Nikon Corporation | Stage device and exposure apparatus |
WO1999031462A1 (fr) | 1997-12-18 | 1999-06-24 | Nikon Corporation | Platine et appareil d'exposition |
US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
KR20010075157A (ko) | 1998-09-17 | 2001-08-09 | 오노 시게오 | 투영광학계의 조정방법 |
CN1238882C (zh) | 1998-12-02 | 2006-01-25 | 纽波特公司 | 试片夹持机械手末端执行器 |
KR20020006670A (ko) * | 1999-03-12 | 2002-01-24 | 시마무라 테루오 | 노광장치 및 노광방법, 그리고 디바이스 제조방법 |
JP4365934B2 (ja) * | 1999-05-10 | 2009-11-18 | キヤノン株式会社 | 露光装置、半導体製造装置およびデバイス製造方法 |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
JP2001118773A (ja) | 1999-10-18 | 2001-04-27 | Nikon Corp | ステージ装置及び露光装置 |
WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
TWI223734B (en) | 1999-12-21 | 2004-11-11 | Asml Netherlands Bv | Crash prevention in positioning apparatus for use in lithographic projection apparatus |
EP1111471B1 (en) | 1999-12-21 | 2005-11-23 | ASML Netherlands B.V. | Lithographic projection apparatus with collision preventing device |
TW546551B (en) | 1999-12-21 | 2003-08-11 | Asml Netherlands Bv | Balanced positioning system for use in lithographic apparatus |
US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
JP2001267239A (ja) | 2000-01-14 | 2001-09-28 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
SG124257A1 (en) | 2000-02-25 | 2006-08-30 | Nikon Corp | Exposure apparatus and exposure method capable of controlling illumination distribution |
JP2001241439A (ja) | 2000-02-25 | 2001-09-07 | Canon Inc | 静圧軸受を備えた移動装置 |
JP2001313250A (ja) | 2000-02-25 | 2001-11-09 | Nikon Corp | 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法 |
JP2001244177A (ja) | 2000-02-28 | 2001-09-07 | Nikon Corp | ステージ装置とホルダ、および走査型露光装置並びに露光装置 |
JP2001257143A (ja) * | 2000-03-09 | 2001-09-21 | Nikon Corp | ステージ装置及び露光装置、並びにデバイス製造方法 |
US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
EP1279070B1 (en) * | 2000-05-03 | 2007-10-03 | ASML Holding N.V. | Apparatus for providing a purged optical path in a projection photolithography system and a corresponding method |
TW591653B (en) | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
JP4405071B2 (ja) | 2000-10-23 | 2010-01-27 | パナソニック株式会社 | 送り装置及びそれを具備する光ディスク原盤記録装置 |
KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
JP2002305140A (ja) | 2001-04-06 | 2002-10-18 | Nikon Corp | 露光装置及び基板処理システム |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
US6788385B2 (en) | 2001-06-21 | 2004-09-07 | Nikon Corporation | Stage device, exposure apparatus and method |
TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
US6680774B1 (en) | 2001-10-09 | 2004-01-20 | Ultratech Stepper, Inc. | Method and apparatus for mechanically masking a workpiece |
US6665054B2 (en) | 2001-10-22 | 2003-12-16 | Nikon Corporation | Two stage method |
US7134668B2 (en) | 2001-10-24 | 2006-11-14 | Ebara Corporation | Differential pumping seal apparatus |
JP2003249443A (ja) | 2001-12-21 | 2003-09-05 | Nikon Corp | ステージ装置、ステージ位置管理方法、露光方法及び露光装置、並びにデバイス製造方法 |
DE10229249A1 (de) | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Refraktives Projektionsobjektiv mit einer Taille |
US7154676B2 (en) | 2002-03-01 | 2006-12-26 | Carl Zeiss Smt A.G. | Very-high aperture projection objective |
US7190527B2 (en) | 2002-03-01 | 2007-03-13 | Carl Zeiss Smt Ag | Refractive projection objective |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
WO2003085708A1 (fr) | 2002-04-09 | 2003-10-16 | Nikon Corporation | Procede d'exposition, dispositif d'exposition et procede de fabrication dudit dispositif |
KR20040104691A (ko) | 2002-05-03 | 2004-12-10 | 칼 짜이스 에스엠테 아게 | 높은 개구를 갖는 투영 대물렌즈 |
JP2004017261A (ja) | 2002-06-20 | 2004-01-22 | Shinya Tsukamoto | 機械加工装置および機械加工方法ならびに機械加工システム |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7383843B2 (en) | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1420299B1 (en) * | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
KR20130010039A (ko) * | 2002-12-10 | 2013-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP4645027B2 (ja) * | 2002-12-10 | 2011-03-09 | 株式会社ニコン | 露光装置及び露光方法、デバイス製造方法 |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
JP4232449B2 (ja) * | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
EP1429190B1 (en) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
JP4701606B2 (ja) * | 2002-12-10 | 2011-06-15 | 株式会社ニコン | 露光方法及び露光装置、デバイス製造方法 |
JP4184346B2 (ja) | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
CN1508631A (zh) * | 2002-12-19 | 2004-06-30 | Asml | 器件制造方法和所制出的器件以及计算机程序和光刻装置 |
US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
DE60307322T2 (de) | 2002-12-19 | 2007-10-18 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
USRE48515E1 (en) | 2002-12-19 | 2021-04-13 | Asml Netherlands B.V. | Method and device for irradiating spots on a layer |
US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
ATE426914T1 (de) | 2003-04-07 | 2009-04-15 | Nikon Corp | Belichtungsgerat und verfahren zur herstellung einer vorrichtung |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
SG10201604762UA (en) | 2003-04-10 | 2016-08-30 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
KR101409565B1 (ko) | 2003-04-10 | 2014-06-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
SG10201803122UA (en) | 2003-04-11 | 2018-06-28 | Nikon Corp | Immersion lithography apparatus and device manufacturing method |
WO2004090577A2 (en) * | 2003-04-11 | 2004-10-21 | Nikon Corporation | Maintaining immersion fluid under a lithographic projection lens |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
ATE542167T1 (de) | 2003-04-17 | 2012-02-15 | Nikon Corp | Lithographisches immersionsgerät |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1480065A3 (en) | 2003-05-23 | 2006-05-10 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and device manufacturing method |
TWI518742B (zh) | 2003-05-23 | 2016-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
JP2004349645A (ja) | 2003-05-26 | 2004-12-09 | Sony Corp | 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法 |
TWI347741B (en) | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
CN101436003B (zh) | 2003-06-19 | 2011-08-17 | 株式会社尼康 | 曝光装置及器件制造方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4343597B2 (ja) | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP2005019616A (ja) | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1498778A1 (en) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1494074A1 (en) | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005006026A2 (en) | 2003-07-01 | 2005-01-20 | Nikon Corporation | Using isotopically specified fluids as optical elements |
EP2853943B1 (en) | 2003-07-08 | 2016-11-16 | Nikon Corporation | Wafer table for immersion lithography |
SG109000A1 (en) | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
KR101599649B1 (ko) | 2003-07-28 | 2016-03-14 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
JP4492239B2 (ja) | 2003-07-28 | 2010-06-30 | 株式会社ニコン | 露光装置及びデバイス製造方法、並びに露光装置の制御方法 |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005057294A (ja) | 2003-08-07 | 2005-03-03 | Asml Netherlands Bv | インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法 |
US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
JP4288426B2 (ja) | 2003-09-03 | 2009-07-01 | 株式会社ニコン | 液浸リソグラフィのための流体の供給装置及び方法 |
JP4378136B2 (ja) | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3870182B2 (ja) | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
DE60302897T2 (de) | 2003-09-29 | 2006-08-03 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
EP1519230A1 (en) | 2003-09-29 | 2005-03-30 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7158211B2 (en) | 2003-09-29 | 2007-01-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
JP2005136374A (ja) | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
EP1524557A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005159322A (ja) | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
EP1685446A2 (en) | 2003-11-05 | 2006-08-02 | DSM IP Assets B.V. | A method and apparatus for producing microchips |
EP1530217A2 (en) * | 2003-11-05 | 2005-05-11 | Fujitsu Limited | Semiconductor integrated circuit having temperature detector |
US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
JP2005150290A (ja) | 2003-11-13 | 2005-06-09 | Canon Inc | 露光装置およびデバイスの製造方法 |
EP1531362A3 (en) | 2003-11-13 | 2007-07-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8854602B2 (en) | 2003-11-24 | 2014-10-07 | Asml Netherlands B.V. | Holding device for an optical element in an objective |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10355301B3 (de) | 2003-11-27 | 2005-06-23 | Infineon Technologies Ag | Verfahren zur Abbildung einer Struktur auf einen Halbleiter-Wafer mittels Immersionslithographie |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
JP2005175016A (ja) | 2003-12-08 | 2005-06-30 | Canon Inc | 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法 |
JP2005175034A (ja) | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
WO2005059617A2 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
JP4308638B2 (ja) | 2003-12-17 | 2009-08-05 | パナソニック株式会社 | パターン形成方法 |
JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
KR101288187B1 (ko) | 2004-01-14 | 2013-07-19 | 칼 짜이스 에스엠티 게엠베하 | 반사굴절식 투영 대물렌즈 |
CN1910522B (zh) | 2004-01-16 | 2010-05-26 | 卡尔蔡司Smt股份公司 | 偏振调制光学元件 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
WO2005071491A2 (en) | 2004-01-20 | 2005-08-04 | Carl Zeiss Smt Ag | Exposure apparatus and measuring device for a projection lens |
US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
KR20070039869A (ko) | 2004-02-03 | 2007-04-13 | 브루스 더블유. 스미스 | 용액을 사용한 포토리소그래피 방법 및 관련 시스템 |
KR101227211B1 (ko) | 2004-02-03 | 2013-01-28 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005081067A1 (en) | 2004-02-13 | 2005-09-01 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
JP2005236087A (ja) | 2004-02-20 | 2005-09-02 | Nikon Corp | 露光装置 |
JP4622340B2 (ja) | 2004-03-04 | 2011-02-02 | 株式会社ニコン | 露光装置、デバイス製造方法 |
JP2005259789A (ja) | 2004-03-09 | 2005-09-22 | Nikon Corp | 検知システム及び露光装置、デバイス製造方法 |
US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
JP2005268700A (ja) | 2004-03-22 | 2005-09-29 | Nikon Corp | ステージ装置及び露光装置 |
US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060244938A1 (en) | 2004-05-04 | 2006-11-02 | Karl-Heinz Schuster | Microlitographic projection exposure apparatus and immersion liquid therefore |
US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
KR20160085375A (ko) | 2004-05-17 | 2016-07-15 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1759248A1 (en) | 2004-06-04 | 2007-03-07 | Carl Zeiss SMT AG | Projection system with compensation of intensity variatons and compensation element therefor |
CN100594430C (zh) | 2004-06-04 | 2010-03-17 | 卡尔蔡司Smt股份公司 | 用于测量光学成像系统的图像质量的系统 |
US7057702B2 (en) | 2004-06-23 | 2006-06-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1806772B1 (en) | 2004-10-15 | 2014-08-06 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7119876B2 (en) | 2004-10-18 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7583357B2 (en) | 2004-11-12 | 2009-09-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7403261B2 (en) | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG124351A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7161659B2 (en) | 2005-04-08 | 2007-01-09 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
CN102156389A (zh) | 2006-05-23 | 2011-08-17 | 株式会社尼康 | 维修方法、曝光方法及装置、以及组件制造方法 |
RU2618159C2 (ru) | 2011-05-12 | 2017-05-02 | БАЙЕР ХелсКер ЛЛСи | Система введения жидкости, имеющая различные системы для управления процедурой инъекции |
-
2004
- 2004-03-17 WO PCT/IB2004/001259 patent/WO2004090577A2/en active Application Filing
- 2004-03-17 EP EP14200551.1A patent/EP2887143B1/en not_active Expired - Lifetime
- 2004-03-17 CN CN2004800097020A patent/CN101002140B/zh not_active Expired - Lifetime
- 2004-03-17 EP EP13154187.2A patent/EP2613195B1/en not_active Expired - Lifetime
- 2004-03-17 SG SG200717576-3A patent/SG139736A1/en unknown
- 2004-03-17 KR KR1020137013439A patent/KR101498405B1/ko active IP Right Grant
- 2004-03-17 CN CN201010510290.6A patent/CN101980086B/zh not_active Expired - Lifetime
- 2004-03-17 KR KR1020127006823A patent/KR101245031B1/ko active IP Right Grant
- 2004-03-17 KR KR1020117031356A patent/KR101177332B1/ko active IP Right Grant
- 2004-03-17 KR KR1020177000845A patent/KR101861493B1/ko active IP Right Grant
- 2004-03-17 SG SG2012031738A patent/SG2012031738A/en unknown
- 2004-03-17 KR KR1020117014234A patent/KR101178756B1/ko active IP Right Grant
- 2004-03-17 SG SG10201603067VA patent/SG10201603067VA/en unknown
- 2004-03-17 KR KR1020117014237A patent/KR101225829B1/ko active IP Right Grant
- 2004-03-17 KR KR1020187013961A patent/KR20180054929A/ko active IP Right Grant
- 2004-03-17 KR KR1020147017763A patent/KR101577555B1/ko active IP Right Grant
- 2004-03-17 SG SG10201504396VA patent/SG10201504396VA/en unknown
- 2004-03-17 SG SG2012031217A patent/SG2012031217A/en unknown
- 2004-03-17 EP EP13154185.6A patent/EP2613193B1/en not_active Expired - Lifetime
- 2004-03-17 SG SG2012031233A patent/SG194260A1/en unknown
- 2004-03-17 SG SG2012031209A patent/SG2012031209A/en unknown
- 2004-03-17 EP EP04721260.0A patent/EP1616220B1/en not_active Expired - Lifetime
- 2004-03-17 SG SG200717561-5A patent/SG139733A1/en unknown
- 2004-03-17 SG SG200717564-9A patent/SG139735A1/en unknown
- 2004-03-17 SG SG10201404132YA patent/SG10201404132YA/en unknown
- 2004-03-17 KR KR1020147022733A patent/KR101533206B1/ko active IP Right Grant
- 2004-03-17 EP EP16186292.5A patent/EP3141953A3/en not_active Withdrawn
- 2004-03-17 SG SG2012031746A patent/SG194264A1/en unknown
- 2004-03-17 KR KR1020057019366A patent/KR101159564B1/ko active IP Right Grant
- 2004-03-17 KR KR1020127006824A patent/KR101304105B1/ko active IP Right Grant
- 2004-03-17 JP JP2006506525A patent/JP4315198B2/ja not_active Expired - Fee Related
- 2004-03-17 KR KR1020117014236A patent/KR101225884B1/ko active IP Right Grant
- 2004-03-17 SG SG200717562-3A patent/SG139734A1/en unknown
- 2004-03-17 CN CN2010105103063A patent/CN101980087B/zh not_active Expired - Lifetime
- 2004-03-17 KR KR1020157002445A patent/KR101612681B1/ko active IP Right Grant
- 2004-03-17 KR KR1020157029869A patent/KR101697896B1/ko active IP Right Grant
- 2004-03-17 EP EP13154186.4A patent/EP2613194B1/en not_active Expired - Lifetime
- 2004-03-17 EP EP13154181.5A patent/EP2618213B1/en not_active Expired - Lifetime
- 2004-03-17 EP EP13154183.1A patent/EP2613192B1/en not_active Expired - Lifetime
- 2004-03-17 KR KR1020147000451A patent/KR101475657B1/ko active IP Right Grant
- 2004-04-09 TW TW107100503A patent/TWI648589B/zh not_active IP Right Cessation
- 2004-04-09 TW TW093109873A patent/TWI342036B/zh not_active IP Right Cessation
- 2004-04-09 TW TW101108065A patent/TWI397762B/zh not_active IP Right Cessation
- 2004-04-09 TW TW096142837A patent/TWI382270B/zh not_active IP Right Cessation
- 2004-04-09 TW TW102115386A patent/TWI437351B/zh not_active IP Right Cessation
- 2004-04-09 TW TW104142913A patent/TWI578091B/zh not_active IP Right Cessation
- 2004-04-09 TW TW096142836A patent/TWI346349B/zh not_active IP Right Cessation
- 2004-04-09 TW TW106103664A patent/TWI614564B/zh not_active IP Right Cessation
- 2004-04-09 TW TW102115385A patent/TWI486701B/zh not_active IP Right Cessation
- 2004-04-09 TW TW096142839A patent/TWI346345B/zh not_active IP Right Cessation
- 2004-04-09 TW TW104111404A patent/TWI545387B/zh not_active IP Right Cessation
- 2004-04-09 TW TW101108066A patent/TWI425302B/zh not_active IP Right Cessation
- 2004-04-09 TW TW100122562A patent/TWI364623B/zh not_active IP Right Cessation
- 2004-04-09 TW TW100122561A patent/TWI372309B/zh not_active IP Right Cessation
- 2004-04-09 TW TW100127308A patent/TW201144925A/zh not_active IP Right Cessation
- 2004-04-09 TW TW103123289A patent/TWI545386B/zh not_active IP Right Cessation
-
2005
- 2005-09-07 IL IL170735A patent/IL170735A/en active IP Right Grant
- 2005-09-29 US US11/237,721 patent/US7372538B2/en not_active Expired - Lifetime
- 2005-10-27 US US11/259,061 patent/US7327435B2/en not_active Expired - Lifetime
-
2006
- 2006-07-17 HK HK06107939.3A patent/HK1087782A1/xx not_active IP Right Cessation
-
2007
- 2007-04-18 US US11/785,539 patent/US9081298B2/en not_active Expired - Fee Related
- 2007-05-11 US US11/798,262 patent/US7545479B2/en not_active Expired - Fee Related
- 2007-06-22 US US11/812,925 patent/US8848168B2/en not_active Expired - Fee Related
- 2007-07-10 US US11/822,804 patent/US8514367B2/en not_active Expired - Fee Related
- 2007-08-06 US US11/882,837 patent/US8269944B2/en not_active Expired - Fee Related
- 2007-11-26 US US11/984,980 patent/US8035795B2/en not_active Expired - Fee Related
-
2008
- 2008-04-22 JP JP2008111219A patent/JP4775402B2/ja not_active Expired - Fee Related
-
2010
- 2010-01-22 JP JP2010012365A patent/JP4952804B2/ja not_active Expired - Fee Related
- 2010-04-19 US US12/662,471 patent/US8351019B2/en not_active Expired - Fee Related
- 2010-10-08 US US12/923,823 patent/US8879047B2/en not_active Expired - Fee Related
- 2010-10-08 US US12/923,822 patent/US8488100B2/en not_active Expired - Fee Related
- 2010-11-10 IL IL209222A patent/IL209222A0/en active IP Right Grant
- 2010-11-10 IL IL209223A patent/IL209223A/en active IP Right Grant
- 2010-11-10 IL IL209224A patent/IL209224A/en active IP Right Grant
- 2010-11-18 IL IL209439A patent/IL209439A/en active IP Right Grant
-
2011
- 2011-05-19 JP JP2011112549A patent/JP5440551B2/ja not_active Expired - Fee Related
- 2011-12-05 JP JP2011266300A patent/JP5556798B2/ja not_active Expired - Fee Related
- 2011-12-05 JP JP2011266301A patent/JP5660016B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-29 JP JP2012078264A patent/JP5556840B2/ja not_active Expired - Fee Related
-
2013
- 2013-06-18 JP JP2013127364A patent/JP5510596B2/ja not_active Expired - Lifetime
- 2013-07-17 US US13/944,487 patent/US9329493B2/en active Active
- 2013-07-18 US US13/945,201 patent/US8634057B2/en not_active Expired - Fee Related
- 2013-07-18 US US13/945,407 patent/US8610875B2/en not_active Expired - Fee Related
- 2013-07-19 US US13/946,317 patent/US8848166B2/en not_active Expired - Fee Related
- 2013-11-22 HK HK13113042.6A patent/HK1185666A1/xx not_active IP Right Cessation
- 2013-11-22 HK HK13113047.1A patent/HK1185668A1/zh not_active IP Right Cessation
- 2013-11-22 HK HK13113041.7A patent/HK1185665A1/zh not_active IP Right Cessation
- 2013-11-22 HK HK13113046.2A patent/HK1185667A1/xx not_active IP Right Cessation
- 2013-12-06 HK HK13113573.3A patent/HK1186526A1/zh not_active IP Right Cessation
-
2014
- 2014-07-02 JP JP2014136910A patent/JP5862716B2/ja not_active Expired - Fee Related
-
2015
- 2015-01-23 JP JP2015010863A patent/JP5900669B2/ja not_active Expired - Fee Related
- 2015-06-09 US US14/734,783 patent/US9946163B2/en not_active Expired - Fee Related
- 2015-06-25 JP JP2015127873A patent/JP6028838B2/ja not_active Expired - Fee Related
- 2015-11-04 HK HK15110872.5A patent/HK1210279A1/xx not_active IP Right Cessation
-
2016
- 2016-02-15 JP JP2016026294A patent/JP6090486B2/ja not_active Expired - Fee Related
- 2016-04-26 US US15/138,829 patent/US9500960B2/en not_active Expired - Fee Related
-
2018
- 2018-04-11 US US15/950,619 patent/US20180231898A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015172787A (ja) * | 2003-04-11 | 2015-10-01 | 株式会社ニコン | 液浸リソグラフィ装置、デバイス製造方法 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6090486B2 (ja) | 液浸リソグラフィ装置、デバイス製造方法 | |
JP2013225693A (ja) | リソグラフィック投影装置及び液浸露光方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130618 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20130918 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20131003 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140219 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140225 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140310 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5510596 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |