TW201142477A - Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine - Google Patents

Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine Download PDF

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Publication number
TW201142477A
TW201142477A TW100122561A TW100122561A TW201142477A TW 201142477 A TW201142477 A TW 201142477A TW 100122561 A TW100122561 A TW 100122561A TW 100122561 A TW100122561 A TW 100122561A TW 201142477 A TW201142477 A TW 201142477A
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TW
Taiwan
Prior art keywords
immersion
fluid
workpiece table
exposure apparatus
immersion exposure
Prior art date
Application number
TW100122561A
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Chinese (zh)
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TWI372309B (en
Inventor
Michael Bisk Binnard
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Nikon Corp
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Priority to US46249903P priority Critical
Priority to PCT/IB2004/001259 priority patent/WO2004090577A2/en
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW201142477A publication Critical patent/TW201142477A/en
Application granted granted Critical
Publication of TWI372309B publication Critical patent/TWI372309B/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00Photographic printing apparatus
    • G03B27/32Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52Details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70691Handling of masks or wafers
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70691Handling of masks or wafers
    • G03F7/70716Stages
    • G03F7/70725Stages control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70691Handling of masks or wafers
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask

Abstract

An apparatus and method for maintaining immersion fluid (212) in the gap adjacent the projection lens (16) during the exchange of a work piece (208) in a lithography machine (10) is disclosed. The apparatus and method includes an optical assembly (16) configured to project an image onto a work piece (208) and a stage assembly (202) including a work piece table (204) configured to support the work piece (208) adjacent the optical assembly (16). An environmental system (26) is provided to supply and remove an immersion fluid (212) from a gap between the optical assembly (16) and the work piece (208) on the stage assembly (202). After exposure of the work piece (208) is complete, an exchange system (216) removes the work piece (208) and replaces it with a second work piece. An immersion fluid containment system (214) is provided to maintain the immersion liquid (212) in the gap during removal of the first work piece (208) and replacement with the second work piece.

Description

201142477 VI. Description of the Invention: [Technical Fields of the Invention] This application claims the US Provisional Application No. 60/462,499, filed on April 11, 2003, for the purpose of immersing $/巧城影影垫垫Priority of 'the content is for all purposes, A ^ is called here to merge as

L-free technology J lithography systems are commonly used to transfer data from a reticle to a semiconductor wafer during semiconductor fabrication. A: A typical lithography system consists of an optical component, a reticle platform for holding a well cover, a wafer platform assembly for locating half of the group of Japanese yen, and A measurement system for accurately monitoring the position of the reticle and wafer. During operation, an image defined by the reticle is projected onto the wafer by an optical component. The projected image is typically the size of - or a plurality of grains on the 曰:. After exposure, 曰, the circular platform group: will cause the wafer to move 'and the other exposure system will be implemented. This procedure is repeated until all the die on the wafer is exposed. The wafer is then removed' and a new wafer system is replaced in its proper position. The immersion lithography system is fully filled in a gap during use. The optical properties of the immersion fluid may be performed by a small feature size-immersion fluid layer, the exposure of the wafer between the optical component and the wafer, and the optical component allow for the use of standard optical lithography. Projected by 201142477. For example, immersion lithography is currently considered to be a semiconductor technology that includes the next generation of 65 micron, 45 micron, and smaller. Therefore, the immersion lithography system represents a significant technological breakthrough that will likely enable continuous use of optical lithography for the foreseeable future. After a wafer system is exposed, it is removed and replaced with a new wafer. As is currently expected in an immersion system, the immersion fluid will be removed from the gap and then refilled after the wafer is replaced. More specifically, when a wafer is to be replaced, the fluid supply to the gap is closed and the flow system is removed from the gap (ie, by vacuum), the old wafer is Moving away, a new wafer is aligned and placed in optical assembly T, and then the gap is refilled with new immersion fluid. Once all of the above steps have been completed, the exposure of the new wafer can be initiated. The wafer replacement in the above-mentioned 'again/clear phantom is for many reasons, the repetition of the ▲ question gap and the discharge system may cause the immersion fluid to degenerate' and may cause bubbles to form in the immersion fluid. . Bubbles, unsteady flow systems can interfere with the projection on the reticle on the wafer, thus reducing the yield, the program involves many steps, and is a time consuming 'and this will reduce the overall output of the machine . When the ivage t-wafer platform moves away from the projection lens, for example, in the wafer intersection, Θ is used to maintain the immersion fluid in the gap between the iR4 Π Ά Ά y y / / quot; L limb, 郇 near projection lens The design and methods are therefore for our needs. SUMMARY OF THE INVENTION 5 201142477 The apparatus and method for maintaining the length of the ^_w, the quasi-holding > and the 'body in the gap of the adjacent projection lens in the seven-and-rear lithography machine are disclosed. The apparatus and method includes an optical assembly configured to project an image onto a workpiece, and a flat member comprising a workpiece table, the workpiece table being configured to The support workpiece is adjacent to the optical assembly. — a 裱丨 brother system is provided to supply an immersion fluid and to remove the immersion fluid ~ 攸 gap. After the exposure of the workpiece is completed, an exchange system removes the τ village workpiece and replaces it with a second workpiece. An immersion fluid system is provided to maintain the immersion fluid at ρ, in detail in the gap, as the workpiece table moves away from the projection lens. Therefore, the gap is not refilled with the immersion fluid when the first workpiece is replaced by the first workpiece. [Embodiment] The first figure is a schematic illustration of a lithography machine 1B having the features of the present invention. The lithography W 0 includes a frame i 2, an illumination system 4 (illumination device) 'an optical 纟 and a q 〇 thousand, and a member 16 , a reticle platform assembly 丄 8 , a workpiece platform assembly; ? π ... thousand ten thousand ^ 0, - a measurement system 2 2 - a control system 2 4, and a fluid account 4 e 0 e ^ ® 兄 i brother system 2 6 . The design of the components of the lithography machine i can be changed to meet the design requirements of the 彳 彳 。 。 。. In one embodiment, the micro-discrimination machine is used to transmit a pattern of an integrated circuit (not shown) from the umbrella w 9 β old # ^ mask 28 Up to a semiconductor wafer 30 (illustrated by dashed lines). Jordan website URL ^. The 彳 影 1 is attached to a mounting base 3 2 , such as the ground, a singular, a sill, a pedestal, or a floor or other support structure. 201142477 is used as a ^ ^ A in various embodiments of the invention. The 喊 喊 〇 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知〇n L between the first cover 2 8 is exposed to the crystal in a known type of micro-seeking;; by the Department of witch △, μ J do ~ machine, the mask 2 8 by light σ,. And the member 18 is moved to the optical axis of the vertical component x, which is the first element of the component 16, "the sun circle 3 藉 is by the wafer platform # and # 9 n &. ^ 卞 D, and the piece 2 0 It is moved to be perpendicular to the optical axis of the pre-learning component 16. The well 罝 9 β hood 2 δ and the wafer 3 扫 sweep "(4) are generated when the reticle 28 and the wafer 30 are simultaneously moved. Alternatively, the lithography machine 1 can be a step-and-step type of lithography system, which is performed on the reticle 28 at the time of the reticle 28 and the wafer 3 ◦ For the rest. In the step and the repetitive order, the @@圆3G is in the strange position of the seven masks relative to the mask 28 and the optical component 丄6 during the exposure of the individual regions. Then, between the successive exposure steps, the wafer 3 is continuously moved while the wafer platform assembly 20 is perpendicular to the optical axis of the optical component 丄6 so that the next region of the wafer 30 can be The exposure is carried out in an appropriate position relative to the optical component 6 and the photomask 28 to perform exposure. After this procedure, the image on the reticle 28 is successively exposed on the regions of the wafer 3, and the next region of the wafer 3 〇 is brought into the optical component 16 and the light. The cover 2 is in the proper position. However, the use of the lithography machine 1 provided herein is not necessarily limited to lithography for semiconductor fabrication. For example, the lithography machine 10 can be used as an LCD lithography system for exposing a liquid crystal display device pattern to a rectangular glass plate member, or a lithography system for fabricating a 201142477 thin film magnetic head. Accordingly, the term "workpiece" is used broadly herein to refer to any device that can be applied to a circle using lithography, such as, but not limited to, a wafer or LCD substrate. The equipment frame 12 supports the components of the lithography machine 1 。. The equipment frame 12 described in the first figure supports the mask platform assembly 18's workpiece platform assembly 20, optical assembly 16 and illumination system 14 above the mounting base 3 2 . The illumination system 14 includes an illumination source 34 and an illumination optics component 36. The illumination source 34 emits a beam of light energy (irradiation irradiation). The illumination optics assembly 6 6 directs the light from the illumination source 34 to the optical assembly 16. The beam selectively illuminates the different portions of the reticle 28 and exposes the wafer 3 。. In the first figure, the illumination source 34 is illustrated as being supported above the reticle stage assembly 18. Typically, however, the illumination source 34 is fixed to one side of the device frame ' 2 and the energy beam from the illumination source 34 is directed to the reticle stage assembly 18 via the illumination optics 36. . The illumination source 3 4 can be a g-line source (436 nm), an i_Hne source (365 nm) 'KrF excimer laser (248 nm), an ArF excimer laser (193 nm) or an F2 laser (157 nm). Or, the illumination source 34 can generate charged X-rays. The optical assembly 16 projects and/or focuses the light passing through the reticle 28 onto the wafer 30. Depending on the design of the lithography machine 1 光学, the optical component 16 can enlarge or reduce the image that is illuminated on the reticle 28. The optical component 16 does not need to be limited to a reduction system. It can also be a single or higher magnification system of 201142477. Similarly, by exposing a workpiece by using a vacuum ultraviolet ray (VUV) having a wavelength of 2 〇〇 nm or less, an optical system of a catadioptric type can be considered as an example of an optical system of a reflection-refractive type. It is disclosed in Japanese Patent Application No. 5,668,672, the entire disclosure of which is hereby incorporated by reference. And its corresponding US Patent No. 5,835,275. In these examples, the reflective optical fastener can be a catadioptric-type optical system incorporating a beam splitter and a concave mirror, as disclosed in Japanese Patent Application No. 8 334 695. U.S. Patent No. 5,689,377. A reflection-refractive type optical system incorporating a concave mirror or the like without a spectroscope is also used, and can also be used in conjunction with the present invention. If permitted, the above-mentioned US special case: and the disclosure of the patented towel in the Japanese special issue request for the publication of the patented towel are incorporated herein by reference. The reticle 28 is held in contact with the hood platform assembly 18 and positioned relative to the light: 16 and the wafer 3 Q. In one embodiment, the reticle stage assembly 1 p 4 & 8 8 includes a reticle stage 3 8 holding the reticle 28, and the reticle platform 38 and the reticle 28 are secured. Move and position the reticle flat « 夕 夕 moving components 4 〇. The platform of a light armor platform moving components 40, 44 can be moved, individual 4 2 in three degrees of freedom, less than three degrees of freedom ' or large 9 201142477 in three degrees of freedom. For example, in the case of the 芈 芈 # ^ , , , , , , , 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每 每One, five, or five, or six degrees of freedom. First cover thousands of α moving components 4 〇 and work white _ + ☆ dry ten private components 4 4 series can be knives 匕 3 - or more movers, example 4 | 丨 by τ 疋 slave to motor, voice coil motor The spear uses Lorentz force to generate a linear motor that drives the force, an electromagnetic horse + surface motor, or some other force mover. = When a linear motor (see US Patent No. 2 Sr " No. 8 and its incorporated herein by reference) is used: Back to the platform member or the reticle platform assembly using air bearing - air lift type or utilization τ is the type of magnetic lift that uses the L〇rentz force or reaction force. The other track, or 1 筏, * 千 D system can move along the same or 'two, ° to 'do not use the track - no track type platform. Or, a platform system can be driven by a one-and-one-seven-sided motor, which is driven by a magnet unit with a one-dimensional configuration magnet and a coil with a coil in the opposite position.电磁 产生 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 电磁 经由 电磁 经由 经由 经由 经由 经由The unit is mounted on the side of the moving plane of ^ t σ. ^ The movement of the platform as described above will produce ± ^ λ λ Han force, which may affect the "system performance. By wafer (substrate) "The platform movement": The reaction force may be sent to the floor (ground) by the two-degree movement of a frame element, as in the :::: Japanese public and the first Described in the valley 10 201142477

By. In addition, the reaction force generated by the reticle (mask) flat A sigma movement can be transmitted by mechanically to the floor q by using a frame member. ^ ^ Spear, 874, 820 and the Japanese Patent Application No. 8-3 3 0224, the disclosure of which is incorporated herein by reference. Reference is made to U.S. Patent No. 5,528, the entire disclosure of which is incorporated herein by reference. ~ Τ Τ 者 合并 合并 合并 合并 合并 合并 合并 合并 合并 合并 合并 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 n n n n n n n n n n n n n Other reference materials system 9 " / can be white" eve. Through this - information, control

The system can control the mask A to 9 Q ^ 10 D, and the piece 18 to accurately position the light z «, and can control the workpiece △ circle. Once the 'mesh / ten, ' and 2 〇 to accurately position the crystal / then the design of the system 2 2 can be changed. θ system? ? For example, the hu-r text, the measurement system, and the 2 2 system can utilize multiple laser interferences. / Seven soils, flat code, mirrors, and / or other measuring devices. The control system 24 receives the measurement from the measurement vehicle. In the wood 9 , the information of the 2 2 is judged, and the control and 曰n 〇 2 〇 are used to accurately position the mask 2 8 yen 3 〇. In addition, the control system 24 twists the 6 I# Αβ ' to control the operation of the environment system 2 b. Control system 2 4 processor and circuit.匕3—One or more diverting system 6 6 systems are controlled between the optical groups—interval _, 'piece 16 and day yen 3 〇, (not shown in the figure & A shadow in love ". Wood) in the dilemma. Clearance ~ imaging fieid. The shadow/circle is exposed < γ ® μ P u ', such as each area containing the area adjacent to the circumference of the crystal nine and the light energy and the wafer 3 〇 沾 丨 丨 丨 光学 光学 光学 光学 光学 光学The area between J 0. Through this one fight & a ten 'environmental system 2 6 series 201142477. It is created by the environmental system 26 to hope that the environment can control the environment in the image field and/or control the space in the gap and the design of the remaining components of the lithography machine 10 including the illumination system 14 according to the wafer 3 And was changed. For example, it is contemplated that the controlled environment may be a fluid such as hydrophobic. Alternatively, it is sought that the controlled environment can be other types of fluids such as a gas. In various embodiments, the height between the top surface of the wafer 30 and the last optical element of the optical component can be from 〇 1 mm to 1 〇 mm. In one embodiment, the environmental system 26 is filled with an immersion fluid to fill the image field and the remainder of the gap. The design of the components of the environmental system 26 can be changed... In the same way, the environmental system 26 uses a spray nozzle, an electrokinetic sponge, a porous material, etc. to deliver and/or inject the immersion fluid to Among the gaps, and using a vacuum [sponge, and the like, the fluid is removed from the gap. The design of the environmental system 26 can be changed. For example, it is possible to inject the immersion fluid at one or more locations at or near the gap. Further, the immersion fluid system can assist in removing and/or clearing the immersion fluid at one or more locations at or near the edge of the workpiece 30, the gap, and/or the optical assembly 16. For additional details on different environmental systems, please refer to the U.S. Provisional Patent Papers No. 6G/462,142 filed on April 9, 2003. Tiger "Immersion of lithography fluid control system", April 10, 2003 U.S. Provisional Patent Application Serial No. 60/462,112, filed on Apr No. 60/500,312 "Recovering via a porous material and a noise-free fluid proposed by the February 2, 2004", U.S. 庐蚌 ώ ώ 60/541, 329 of the bow "for immersion micro@I Patent application No. 〆 之 嘴 嘴 执 丄 丄 丄 丄 丄 丄 丄 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' It is displayed. The lithography machine 2 〇n—the cross-section of the alkali machine uu is included — a platform component 2 0 2, platform component 2, first learn components 16 and 2 0 4 and a wafer platform 2 〇 6. Includes a wafer table type to support one wafer 2 〇 8 (曰 round table 2 0 4 is under the optical component U. - Ring = his type of workpiece) is used in the 2 6 series to supply the immersion flow =, · and the environmental system of the piece 16 and the phase 〇 _ 12 to Wafer 208 disk first dry component 1 6 between the last optical components ', 〇 ^ ^ ^ ^ ] Γ θ1 gap and immersion fluid 2 i (four) 劈 h μ day yen loader 2 1 8 (for example, a mechanical and a Alignment and 9 9 rw*A* recognition ^, 2 2 0 (ie, microscope and CCD camera) = = Γ 16 is configured to replace 8 #夕 on wafer table 2〇4 with - The second wafer. This system typically uses a round loader 2 1 8 so that the wafer 2 η «払 & i also uses day, ^ to lift 曰曰 W 2 0 8 and move away from the wafer table 2 〇 . 4 completed. Subsequently, the -a (not shown in the illustration)

(T, placed on the wafer chuck? 彳R 1 ..隹4 1 8 , using the alignment tool 2 2 0 to align, and then positioned in the optical component Ί R π t & π + Table 2〇4. 6 Below the wafer table via this - Embodiment, wafer platform 2〇4 system contains nano system 2 1 4 , ft piece, + m , 1 to maintain immersion flow during wafer exchange In the gap 13 201142477 adjacent to the last optical component of the optical component 16. The immersion fluid containment system 2 1 4 includes a mat 2 2 2 adjacent to the wafer table 2 。 4. One is provided between the mat 2 2 2 The support member 2 2 4 between the wafer platform and the wafer platform is used to support the die 2 2 2 . The wafer table 2 0 4 has a flat upper surface, which is bonded to the wafer 2 0 8 One of the surfaces is coplanar. The mat 2 2 2 also has a flat upper surface that is coplanar with the upper surface of the wafer table 2 〇 4 and the wafer surface. The mat 2 2 2 is configured adjacent to the crystal The round table is 2 0 4 and is separated by a very small gap (for example, 〇1 1 〇 mm), so the immersion fluid 2 1 2 is movable There is no leakage between the wafer table 2 〇 4 and the mat 2 2 2 . During the wafer exchange, the wafer platform 206 is moved in the direction of the arrow 2 2 6 , so the scorpion 2 2 2 Positioned in the optical component 丄6 to replace the wafer table 2 〇 4, while maintaining fluid in the gap or maintaining the size of the fluid gap. After the new wafer has been aligned, the wafer platform is moved back to it. The initial position, such that the mat 2 2 2 can be removed from the gap when the second wafer is positioned under the optical assembly 。 6. In various embodiments, the raft 2 2 2 is continuously placed adjacent On the wafer table 2 〇 4 without (4): The vertical position of the wafer table 2 〇 4 and / or the tilt system can be adjusted. This wafer table table light 牡 曰 杲 杲 2 2 2 Move away from Yuzi, and the lower front part of the piece can be coplanar with the surface of the mat and the surface of the cymbal. Maintain the μ睹 and 曰nak ^ between the type '22.2 and the optical component 16. · The gap between 1 D is not limited to only one round parent change operation. The early 9 9 9 technology - Γ to 2 series can be large enough for a pair During the quasi-operation 3, the immersion fluid is maintained in the space between the mat 2 2 and the pre-component 16. In the furnace, the τ is in the middle, Submerged flow 14 201142477 A portion of the area occupied by the body 2 1 2 may be on the upper surface of the wafer table 2 〇 4 . More..., 苐A diagram and third b diagram, according to another aspect of the invention The cross-sectional view and the top view of another lithography machine of the embodiment are shown to include an optical button 16 and a platform assembly 2 assembly 3 0 2 system, including a wafer table 300 and a crystal Round flat mouth 3 0 6. The wafer table 3 〇 4 is configured to support a wafer 3 〇 8 (or any other type of workpiece) under the optical assembly i 6 . An environmental system 26 surrounding the optical component i 6 is used to supply the immersion fluid 3 1 2 to the gap between the wafer 3 〇 8 and the lowermost optical component of the optical component 丄 6 and to immerse the fluid 3 丄2 Remove from there. The workpiece exchange system 3 16 including the wafer loader 3 i 8 and the alignment tool 3 2 被 is configured to remove the wafer table 3 and replace it with a second wafer. This uses the wafer loader = to move the wafer 308 away from the wafer table. After that, the second wafer (not shown in the drawing) is placed on the wafer chuck 3丄8, aligned using the alignment tool 3 2 、, and then positioned Below the optical assembly 16, as best illustrated in Figure 3B, the _ group of motors 32 is used to operate the wafer assembly 3 〇 2 containing the wafer table 3 〇 4 and the wafer platform 306 During the movement, it moves to two degrees of freedom (X and ". As mentioned above, the motor 32 2 can be any type of motor 'for example, a linear motor, a rotary motor, a voice coil motor, etc. Immersion lithography machine 3 The crucible also includes an immersion fluid containment system 32 4 that is configured to maintain the immersion fluid 3 in the space under the optical assembly 6 while the wafer table 304 is away from the lower portion 15 201142477 of the optical assembly. The gripping system also includes a mat 3 2 6 , a motor 3 2 8 , and a control system 3 3 〇. The raft 3 2 6 system can be positioned adjacent to the optical assembly 16 and the wafer table. Table 3〇4. Wafer table 3 〇 4 series has a flat upper surface, which is one of the wafers and wafers The face is coplanar. The scorpion 326 has a flat upper surface-system that is coplanar with the upper surface of the round table 3〇4 and the wafer surface. The mat 3 26 can be moved using the motor 3 28 In the direction of 'the motor 3 2 8 is controlled by the control system 3 3 。. The motor 3 2 8 is the same as the motor 3 2 2 and can be any type of motor. When the wafer table mouth 3〇4 (曰曰圆When the platform 306) is away from the optical component 16 below, the mat 326 is positioned below the optical component i 6. During the wafer exchange, the wafer table 306 moves away from the optical component 6 while at the same time The control system 3 3 指示 indicates the motor 3 2 8 to move the mat 3 26 under the optical component 6 to return the wafer table 3 〇 4 to the original position. The mat 3 26 is so that the immersion fluid 3 丄 2 Keeping in the gap below the optical component 16 "After the new wafer system has been aligned using the alignment tool 3 2 '" the wafer table 3 〇 4 is repositioned below the optical component 16. On the same day The control system 3 3 indicates the motor 3 2 8 to retract the mat 3 2 6 from the gap and prevent dip The flow of fluid 3丄2. In the wafer exchange operation, the control system 3 3 moves the wafer table 3 ◦ 4 and the raft 3 2 6 and has a small gap between the wafer table 3 〇 4 and the mat 3 26 'At the same time, the immersion fluid 3 1 2 under the optical component 16 moves between the wafer table 3 0 4 and the mat 3 2 6 . The immersion stream 16 201142477 stays in the 313 2 4 system and thus in the wafer exchange The immersion fluid 3 丄 2 is held in the gap during this period. In this embodiment, the wafer table 304 (crystal: platform 306) and the mat 326 are independently movable. Therefore, the round table 3 〇 4 series is free to move, while simultaneously immersing the fluid 3 丄 : is held in the space between the mat 326 and the optical component. In various embodiments of the present invention, the control system can be an independent control season, ten, 4^. -rf-, ^ ', ,, 'or /, can be integrated to be used It is used to locate the control system of the wafer platform 3 〇 6 and the wafer table 3 〇 4 motor 3 2 . At least one vertical position and/or tilting system of the wafer table 300 and the die 3 26 can be adjusted, for example, the wafer table surface is before the wafer table is moved away from the optical component 6 The operation of being coplanar with the surface of the mat, rounding the table 3 〇 4 away from the optical assembly 16 does not need to be limited to the wafer exchange operation #. For example, an alignment operation, a measurement operation, or other operation can be performed while maintaining the immersion fluid 3丄2 in the space between the mat 326 and the optical assembly 16. Referring to the fourth A map and the fourth b map, two matte images of an immersion lithography machine are displayed. The lithography machine 4 〇 包含 includes an optical component 丄 6 : and a platform component 4 0 2 ' The platform component 4 〇 2 system includes a wafer table 4 〇 4 and a wafer platform 4 〇 6. The wafer table 4 〇 4 is configured to support a wafer 4 〇 8 (or any other type under the optical component i 6 ... a system of surrounds around the optical component 丄 6 is used Supply immersion fluid 4丄2 to the gap between the wafer 408 and the lowermost optical component of the optical component 丄6 and remove the immersion 17 201142477 no fluid 4 1 2 from there... one containing a wafer loader The workpiece exchange system 4丄6 and the alignment tool 4 2〇 are configured to remove the wafer 4 〇 8 on the wafer table 4 〇 4 and replace it with a second wafer. The wafer loader 418 is used to move the wafer 4〇8 away from the wafer table 104. Subsequently, the second wafer (not shown in the figure) is placed on the wafer chuck. 418, using alignment tool 420 for alignment, and then positioned under the optical assembly "as illustrated in Figure A. Immersion lithography machine 4 〇〇 also includes - immersion fluid containment system 424, configured to maintain the immersion fluid 4 when the wafer table 104 is away from the optical component 2 under the optical component 16 In the space, the immersion fluid containment system 4 2 4 includes a die 4 26, a first clamp 4 2 8 provided on the optical assembly 16, and a first provided on the wafer table 4 4 The second clip is sweet. When the immersion fluid 4 1 2 is between the optical component 6 and the wafer table 4 0 4 (or the wafer 4 〇 8 ), the mat 4 26 is by the second The clamp 430 is held in a suitable position on the wafer table 404. When the wafer table 404 is remote from the optical assembly, such as during a wafer exchange operation, the die 4 26 is from the wafer table 4 〇 4 detachment, and held by the first clamp 4 2 8 to maintain the immersion fluid 4 1 2 between the optical component 丄 6 and the mat 4 2 6 . The wafer table 4 0 4 has - a flat upper surface that is coplanar with a surface of the wafer 408. The die 426 held on the wafer table 4〇4 also has a flat upper surface that is attached to the wafer 18 201142477 The upper surface of the table 4 04 and the surface of the wafer are coplanar. Therefore, the dip / mat 4 4 6 and the wafer 4 can be moved in the optical group There is no immersion fluid leakage. In various embodiments, the clamps 4 2 8 and 4 3 0 can be vacuum clamps, magnetic, electrostatic, or mechanical. As best shown, the mat 4 26 is positioned on the wafer table 4 〇 4 during the exposure of the wafer 4 。 8. The second clamp j 390 is used to place the mat during wafer exposure. 4 2 6 is held in the appropriate position on the table 4 04. During the wafer exchange as illustrated in Figure 4B, the wafer table 4 4 4 is moved to the side of the arrow 4 3 2 = upper ' So the dice 4 2 6 series is positioned in the optical component i 6 instead: round 4 〇 8. When this happens, hold the dice 4 2 6 to the wafer table 4 0 4: the clamp 4 3 is released, while the first de-sweet 4 2 8 will cushion the mat 4 4 6 to Optical component 丄6. Thus, the immersion fluid 4 1 2 is held under the optical assembly while the wafer is being exchanged. After the wafer has been aligned, the wafer table 4〇4 is moved in the opposite direction of the head 4 3 2 2 so that the new wafer system can be positioned under the light. Before this action, the H-clamp 4 2 8 is released, and when the second clamp 4 3 is used, the tweezers 4 2 6 are again clamped to the wafer table: 04. In this embodiment, 1 round table 4〇4 is free and the whole 4 2 6 is clamped by the first clamp 4 2 8 . In the clamped embodiment, the mat 4 26 is replaced by the first clamp 428 only for the - wafer exchange operation. - Alignment, - Measure, or any other operation can be performed while immersing fluid in the same 19 201142477 4! 2 is maintained between the optical...6 and being clamped by the first tongs 4 2 8 The space between the dice 4 2 6 . Similarly, the tongs 4 2 8 can be provided on the frame i 2 or other support members, and the tongs 4 3 can be provided on the wafer platform 4 Q 6 . The dice 4 2 6 series can be held on a movable component that is not a platform component 4 〇 2 . The fifth A ® and fifth b diagrams are top views of two different dual stage immersion lithography systems in accordance with other embodiments of the present invention. For the basic structure and operation of the bis-platform lithography system, see U.S. Patent No. 6,262,796 and U.S. Patent No. 6,341,007. The disclosures of U.S. Patent No. 6,262,796 and U.S. Patent No. 6,341, the entire disclosure of each of which is incorporated herein by reference. In the second embodiment, the wafer platform and the WS2 system are displayed. The motor 5 〇 2 is used to move or position the two platforms WS1 and WS2 in the horizontal direction, and the motor 5 Q 4 is used to move or position the two platforms WS1 and WS2 in the vertical direction. Motors 502 and 504 were used to position a platform under the optical assembly 16 with the parent, while a wafer exchange and alignment system was applied to the other platform. When the exposure system of the wafer under the optical component 丨6 is completed, the two platform systems are then exchanged, and the above-described program is repeatedly executed. By way of any configuration, the present invention is as described above with reference to Figures 2 through 4 and is used to maintain the immersion fluid in the gap under the optical component i6. Different embodiments may be associated with any dual platform. The configuration is used together. With regard to the embodiment of the second figure, each wafer level σ S W1 and S W2 of the fifth A diagram or the fifth B diagram can be modified to include a mat 2 2 2 and 20 201142477 a support Element 2 2 4. With respect to the third embodiment, a single mat 3 26, motor 3 28, and control system 330 can be used adjacent to optical assembly 16. The mat 3 2 6 series can be moved independently from the platforms swi and SW2. During the exchange of the platforms SW1 and SW2, the mat 326 is moved under the optical assembly 16 to maintain the immersion fluid 3 1 2 below the optical assembly 丄6. Finally, via the embodiment of the fourth figure, a separable single mat system can be used. During the exchange of the platforms SW1 and S W2, the mat 4 26 is used to maintain the immersion fluid in the gap, as illustrated in the fourth B diagram. On the other hand, between the light d, the mat is clamped onto the round table on the optical table to be exposed. In this way, only one-single-scorpion is required for our two platforms WS1 and WS2. Alternatively, as will be described below, the wall τ 2 platform can also be used as a mat. A <>', ', ', a plan view, a top view showing the embodiment of the present invention is shown. In this embodiment, the immersion= lithography machine “0” includes the first platform 6〇4 and the second platform 6. The two platforms are moved by the motor 6 Q 2 in the X and γ directions. In the embodiment, 'platform 6 0 4 and 6' are themselves controlled by the gap in the gap. For example, 'as in the next figure, the first platform 6 〇 4 is positioned in the optical component 丄 6: when the timing of the workpiece is to be exchanged, the horse platform β 牛 $ $ platform positioning Adjacent to the first υ 4. The two platforms, which are positioned to be juxtaposed, will form a substantially uniform surface. The motor 6 Q 2 is then used to move the two platforms so that the second platform 6 〇 4 is positioned below the optical assembly 16 and the first platform is no longer under the optical assembly 丄6 . Thus, when the first workpiece is moved away from the optical assembly 16, the immersion flow system in the gap is maintained by the second platform 606, and the second platform is substantially continuous with the first platform. surface. In various embodiments, the second platform 606 can also be a "pad" platform that includes one that is used to place a second workpiece on the first platform 604. Maintain the immersion fluid in the gap in the gap. Similarly, the motor configuration shown in Figure 5A or Figure 5B can be used. Referring to Figures 6B through 6E, a series of illustrations illustrating the exchange of workpieces in accordance with the present invention are illustrated. Figure 6B shows the wafer on the platform 60 after the exposure has been completed. The sixth c-frame shows that the second platform 606 is in contact with (or in close proximity to) the first platform 6 〇 4 below the optical assembly 16. The sixth D-picture shows that a transition occurs, that is, the second stage 6 〇 6 is positioned below the optical component 丄6. Finally, in the sixth diagram, the first platform 6 〇 4 is moved away from the optical component 丄 6. As best illustrated in the sixth and sixth figures, the two platforms 6 0 4 and 6 〇 6 provide a continuous surface under the optical member 16 during a transition to maintain the immersion fluid. In the gap. The second platform 6 ◦ 6 of the illustrated embodiment is a sub-station. However, the platform can also be a platform, as already mentioned above. In the various embodiments described above, the mat may be made of a number of different materials 22 201142477, such as ceramic enamel, metal plastic. According to other embodiments, these materials may also be coated with Teflon. The mat should also be sized to cover the area occupied by the immersed fluid. In the second embodiment of the above different embodiments, the surface of the last optical component of the optical component 16 is constantly in the n-spring strait, while preventing a fluid mark "column as a "print ((4)... mark) j The semiconductor wafer system can be fabricated using the above-described system by a program substantially as shown in the seventh figure. In step 7〇1, the workpiece: function and performance characteristics are designed. Down, in the step two I.:: a mask with a pattern (mask), according to the previous design circle " wide leaf, and in a parallel step 7 〇 3 +, a crystal I: material is In the step..., in step 702, the description = mask pattern is based on a =:::: according to the invention: exposure on the wafer from the step ... * wire program, ... Install the program) = loaded with the cutting program, 〇 6 is checked by force. ^, the Guardian is followed by the step 6 Β Β 说明 说明 说明 说明 说明 7 7 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Detailed process in the state of semiconductor workpieces

In the 1 (oxidation step), in the step 曰η矣/弟七6, in step 7 1), the day and surface are oxidized. In step 7 1 2 (CVD 7 13 C i ' is formed on the surface of the sun circle. On the step wafer. In the formation step), the electrode is formed on the 0-day circle by steaming. In step 7 ^ into the wafer in the wafer implantation step", the ion system is implanted 111. The above step 71 !__ 7 1 4 is formed at the wafer 23 201142477 during the process for crystal treatment needs inflammation m The scoop pretreatment step, and each step is selected according to the smock. In the wafer processing each - #, 奴 § the above-mentioned processing steps have been completed U ^ processing step material is executed. During the processing, first, in step 7 1 ς, Β (resistance forming step), the photoresist system is coated with the main day 0. Next, in step 716 (exposure step), the exposure is first The gap is used to convert the circuit pattern of a 曰., Α, mask (mask) to the sun circle. Next, the wafer system is ", # (development step) towel has been exposed... in step 7 In the 1 8 (button engraving step), except for the residual photoresist, the Qiu Ba was removed. In the step;: ... material surface) is maintained by #刻: In addition to (4)) towel, the photoresist that is not needed after the touch is removed. The implementation of the multi/I circuit pattern is formed by repeated application of these processing and post-processing steps. i

Although in this paper φ jS / f is 5 - n 1W to obtain and provide this article: = the specific lithography machine that can show the purpose and advantages of the lithography machine will be solved for us. ^ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory view of a lithography machine having the features of the present invention; and FIG. 2 is a cross-sectional view of a immersed lithography machine according to an embodiment of the present invention. Root

The core of the third A immersion lithography machine: (d) according to another embodiment of the present invention - J ° j surface view and top view; the four sides of the immersion type lithography machine of the fourth embodiment of the immersion immersion type photographic machine according to another embodiment of the present invention &第五 及 俯视 俯视 ; ; ; ; ; 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五A is a top view of another machine according to the present invention; the sixth B to the sixth E are a series of circular representations; the seventh A is a flow chart, which outlines a procedure according to a workpiece And a description of a wafer according to the present invention to produce a seventh B-system flow diagram, which is a more detailed description of the similar components of the workpiece in the drawings. Component symbol description]

Mirror frame illumination system / illumination equipment optical component mask platform assembly workpiece platform component measurement system 25 2 201142477 2 4 control system 2 6 fluid environment system 2 8 mask 3 0 semiconductor wafer 3 2 mounting base 3 4 Zhaoming Source 3 6 Zhao Yiming Optical Components 3 8 Mask Platform 4 0 Mask Platform Moving Components 4 2 Platform 4 4 Workpiece Platform Moving Components WSl Wafer Platform WS2 Wafer Platform 2 0 0 Mirror 2 0 2 Platform Components 2 0 4 Wafer Table 2 0 6 Wafer Platform 2 0 8 Wafer 2 1 2 Immersion Fluid 2 1 4 Immersion Fluid Containment System 2 1 6 Workpiece Exchange System 2 1 8 Wafer Loader 2 2 0 Alignment Tool 2 2 2 Mat 26 201142477 2 2 4 Supporting element 3 0 0 Mirror 3 0 2 Platform component 3 0 4 Wafer table 3 0 6 Wafer platform 3 0 8 Wafer 3 1 2 Immersion fluid 3 1 6 Workpiece exchange system 3 18 Wafer loader 3 2 〇 alignment tool 3 2 2 Uda 3 2 4 immersion fluid containment system 3 2 6 mat 3 2 8 motor 3 3 0 control system 4 0 0 lithography machine 4 0 2 platform assembly 4 0 4 Wafer table 4 0 6 Wafer platform 4 0 8 Wafer 4 1 2 Immersion fluid 4 1 6 Workpiece exchange system 4 1 8 Wafer loader 4 2 0 Alignment tool 27 201142477 4 2 4 Immersion fluid containment system 4 2 6 Mat 4 2 8 First clip sweet 4 3 0 Second clamp 5 0 2 Motor 5 0 4 Motor 6 0 0 Immersion lithography machine 6 0 2 Motor 6 0 4 First platform 6 0 6 _ - Platform 28

Claims (1)

  1. 201142477 VII. Patent Application Range: 1 · A fluid immersion exposure apparatus in which one workpiece is exposed to an _exposure beam, the apparatus comprising: an optical element 'the workpiece is exposed to an exposure beam passing through the optical element, and a submerged flow system in the door gap between the optical element and the workpiece; a submerged element 'which can be positioned relative to the optical element; a workpiece table to which the workpiece is attached, and which is operative with respect to Moving the optical element; wherein the workpiece table and the immersion element are relatively movable; and wherein the immersion element is positioned relative to the optical element and the immersion flow system is maintained at the optical element and the immersion element When the gap is in between, the workpiece table is moved to perform a predetermined operation. 2. The fluid immersion exposure apparatus of claim 1, wherein the immersion flow system is present under the optical 70 piece from a first state to a second state period; wherein the first state is The workpiece table is positioned below the optical unit, and the second state is positioned below the optical element for the submerged element to replace the workpiece table. 3. The fluid immersion exposure apparatus of claim 2, further comprising a platform assembly constituting the table for moving the workpiece, wherein the immersion 70 pieces are positioned below the optical element by using the platform assembly. 4. The fluid immersion exposure apparatus of claim 3, wherein the immersed 7-piece is attached to the platform assembly. 5. The fluid immersion exposure apparatus according to item 3 of the patent application, wherein 29 201142477 during the conversion, the immersion member and the workpiece table are moved while the immersion member and the workpiece table are close to each other. 6. The fluid immersion exposure apparatus of claim 5, wherein during the switching, the immersion element and the workpiece table form a substantially one surface ' and wherein the immersion flow system is maintained at the optical element and In the gap between the continuous surfaces. 7. The fluid immersion exposure apparatus of claim 6, wherein a positional relationship between a surface of the workpiece table and a surface of the immersion member is adjusted to form the continuous surface. 8. The fluid immersion exposure apparatus of claim 7, wherein the inclination of the workpiece table is adjustable to form the continuous surface. 9. The fluid immersion exposure apparatus according to claim 7, wherein the adjustment is performed before the immersion element is positioned below the optical element in place of the workpiece table. I 〇. According to the fluid immersion exposure apparatus of claim 5, The positional relationship between the surface of the workpiece table and the surface of the immersion element can be adjusted for conversion. II. The fluid immersion exposure apparatus according to the first aspect of the patent application, wherein the inclination of the workpiece table can be adjusted. 12. The fluid immersion exposure apparatus of claim 1, wherein the adjustment is performed before the immersion element is positioned below the optical element in place of the workpiece table. A fluid immersion exposure apparatus according to claim 5, wherein the immersion member and the workpiece table are adjacent to each other with a gap. 30 201142477 14. The fluid immersion exposure apparatus of claim 2, further comprising a platform assembly constituting the table for moving the workpiece, and a mobile system constituting the movement of the immersion element. 1 5. The fluid immersion exposure apparatus of claim 2, wherein the immersion element is clamped away from the workpiece table during exposure of the workpiece to the workpiece table. 1 6. The fluid immersion exposure apparatus according to claim 14 or 15 wherein the immersion member and the workpiece table are moved while the immersion member and the workpiece table are close to each other. 1 7 . The fluid immersion exposure apparatus according to item 16 of the patent application scope wherein the intermediate immersion member and the workpiece table are moved synchronously. 1 8. The fluid immersion exposure apparatus of claim 16 wherein the immersion element and the workpiece table form a substantially continuous surface during conversion and wherein the immersion flow system is maintained at the optical element and In the gap between the continuous surfaces. 1 9 - The fluid immersion exposure apparatus of claim 18, wherein the positional relationship between the surface of the 12-sided workpiece table and the surface of the immersion member is adjusted to form the continuous surface. 2. The fluid immersion exposure apparatus of claim 19, wherein the inclination of the workpiece table can be adjusted to form the continuous surface. 31 1 1 · The fluid immersion exposure apparatus of claim 19, wherein the adjustment is performed before the immersion element is positioned below the optical element in place of the workpiece table. 2 22. The fluid immersion exposure apparatus according to claim 16 of the patent application's positional relationship between the surface of the workpiece table and the surface of the immersion member in 201142477 can be adjusted for conversion. 23. The fluid immersion exposure apparatus according to claim 22, wherein the tilt of the s-shaped workpiece table is adjustable. 24. The fluid immersion exposure apparatus of claim 22, wherein the adjusting is performed before the immersion element is positioned below the optical element in place of the workpiece table. 25 ‘The fluid immersion exposure equipment according to item 24 of the patent application scope, in which the operation of the β-pre-emission operation includes the workpiece exchange operation. 26. The fluid immersion exposure apparatus of claim 25, wherein the immersion flow system is present under the optical element during a transition from a first state to a second state; wherein the first state is the workpiece table The stage is positioned below the optical element, the second state being positioned below the optical element for the submerged element to replace the workpiece table. 27. The fluid immersion exposure apparatus of claim 26, wherein during the transition, the immersion member and the workpiece table are moved while the workpiece table is adjacent to each other. 28. The fluid immersion exposure apparatus of claim 27, wherein the immersion member and the workpiece table are adjacent to each other with a gap. 29. The fluid immersion exposure apparatus of claim 27, wherein the immersion element and the workpiece table are moved synchronously. 30. The fluid immersion exposure apparatus of claim 27, wherein the immersion element and the workpiece table form a substantially continuous surface during conversion and wherein the immersion flow system is maintained at the optical element and 32 201142477 This is the gap between the surface of the reading. • 3. The fluid immersion exposure apparatus of claim 3, wherein the positional relationship between the surface of the workpiece table and the surface of the immersion member is adjusted to form the continuous surface. 32. The fluid immersion exposure apparatus of claim 3, wherein the tilt of the workpiece table is adjustable to form the continuous surface. 3 3 · The fluid immersion exposure apparatus according to item 31 of the patent application's _ 5 Xuan 6-week whole system is performed before the submerged element replaces the workpiece table under the optical element. 34. The fluid immersion exposure apparatus of claim 27, wherein the positional relationship between the surface of the workpiece table and the surface of the immersion member is adjustable for conversion. 35. A fluid immersion exposure apparatus according to claim 34, wherein the tilt of the workpiece table is adjustable. 36. The fluid immersion exposure apparatus of claim 34, wherein the adjusting is performed before the immersion element is positioned below the optical element in place of the workpiece table. 37. According to the fluid immersion exposure apparatus of claim 27, the advancement package 3 is an alignment tool which is disposed away from each other in one direction. A light-drying element in which the immersion element and the workpiece table are in close proximity to each other in this direction. ▲According to the fluid immersion exposure apparatus of claim 37, wherein 忒7L pieces are substantially positioned on opposite sides of the alignment tool relative to the 嗦 workpiece table during exposure. Μ ^ 33 201142477 3 9 · The fluid immersion exposure apparatus according to claim 27, wherein the workpiece table does not have an interferometer mirror on one side thereof and the immersion element is disposed adjacent to the workpiece table The side. The fluid immersion exposure apparatus according to claim 27, wherein the workpiece table has an interferometer mirror on a side thereof, and the immersion member is disposed on the side close to the workpiece table, and One of them. The interferometer beam system is allowed to reach the interferometer mirror. 4 1 . The fluid immersion exposure apparatus according to claim 27, wherein the immersion flow system is prevented from leaking into the gap between the workpiece table and the immersion member. 42. The fluid immersion exposure apparatus according to item 41 of the patent application, wherein the leakage of the immersion fluid is prevented by using gas pressure. 43. A fluid immersion exposure apparatus according to claim 25, wherein the workpiece comprises a wafer that is exposed to the exposure beam. 44. The fluid immersion exposure apparatus of claim 25, wherein the fluid immersion exposure apparatus further comprises a fluid system configured to supply the immersion fluid. 4. The fluid immersion exposure apparatus of claim 43, wherein the fluid system is configured to recover the immersion fluid. 4 6. The fluid immersion exposure apparatus according to item 2 of the Shenqing patent scope, wherein the immersion element is made of one of the following materials: plastic, metal and ceramic. 47. A fluid immersion exposure method, wherein a workpiece is exposed to an exposure beam, the method comprising: providing the workpiece 'the workpiece is fixed to a workpiece table, the workpiece table 34 201142477 relative to an optical component; Exposing the S-Hail workpiece to an exposure beam passing through the optical element, and a immersion flow system in the gap between the optical element and the workpiece; placing a immersion element relative to the optical element to maintain the immersion fluid Between the optical element and the immersion element; and when the immersion element is positioned relative to the optical element, moving the workpiece table to perform a predetermined operation, 48. The fluid immersion exposure method according to claim 47 , where shai is scheduled to operate including workpiece exchange operations. 49. The fluid immersion exposure method of claim 48, wherein the immersion flow system is present under the optical element during a transition from a first state to a second state; wherein the first state is the workpiece table The stage is positioned below the optical element. The second state is positioned below the optical element for the submerged element to replace the workpiece table. 5. According to the fluid immersion exposure method of claim 49, the immersion element and the workpiece table are slid in a state during the conversion, wherein the state is the immersion element and the The workpiece table a is close to each other Μ σ 49 item of fluid immersion exposure method, the complex component moves, and the immersion element is by the fluid immersion exposure method of item 49, the exposure period on the stage 'the immersion element 35 201142477 53 · according to The fluid immersion exposure method according to any one of the items 5 to 52, wherein the immersion member and the workpiece table are moved less. The fluid immersion exposure method of any one of clauses 5 to 5, wherein the immersion element and the workpiece table form a substantially continuous surface during the conversion, and wherein the immersion A flow system is maintained in the gap between the optical element and the continuous surface. 5 5. The fluid immersion exposure method of claim 54, further comprising adjusting a positional relationship between a surface of the workpiece table and a surface of the immersion member to form the continuous surface. 56. The fluid immersion exposure method of claim 55, wherein the tilt of the workpiece table is adjustable to form the continuous surface. 57. A fluid immersion exposure method according to claim 5, wherein the adjustment is performed before the immersion element is positioned next to the optical element. 58. The method of immersion exposure according to any one of clauses 5 to 52, wherein the positional relationship between the surface of the workpiece table and the surface of the immersion member is adjustable for conversion . 5 9. The fluid immersion exposure method according to claim 5, wherein the inclination of the workpiece table is adjustable. 60. The fluid immersion exposure method according to claim 58 of the patent application, wherein the adjustment is performed after the submerged component replaces the workpiece table and positioned below the light " 0 1 · According to the scope of application for patents 5th to 5th - 1st stream 36 201142477 Body immersion exposure method 'into Ot. ^ * . . . * Μ .-ά. , -ρ ^ step contains Preventing the immersion and squeezing of the immersion trap into the gap between the workpiece table and the immersion element. 6 2, according to the application of the special thorn & m circumstance of item 61 of the fluid immersion exposure method, 1 Leakage of the immersion fluid, P, ', '糸' is prevented by the use of gas pressure. 6 3. According to the fluid immersion exposure method of the application π φ ^ X # ^ target 48, the workpiece in the basin contains a wafer, exposed to the optical element through the optical element; 5 $ no fluid exposure beam. 1 卞Μ and 戌 64. - a device manufacturing ^ method, including: by using such as Shen ★ main honey 4 , 丨# Ming patent Fanyuan Ο 至 to 63 items in the red _ s fluid immersion exposure method, any one of the ancient will - workpiece exposure. Eight, schema: as in the next page 37
TW100122561A 2003-04-11 2004-04-09 Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine TWI372309B (en)

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