CN101880893A - 高纯度锡或锡合金及高纯度锡的制造方法 - Google Patents
高纯度锡或锡合金及高纯度锡的制造方法 Download PDFInfo
- Publication number
- CN101880893A CN101880893A CN2010102177417A CN201010217741A CN101880893A CN 101880893 A CN101880893 A CN 101880893A CN 2010102177417 A CN2010102177417 A CN 2010102177417A CN 201010217741 A CN201010217741 A CN 201010217741A CN 101880893 A CN101880893 A CN 101880893A
- Authority
- CN
- China
- Prior art keywords
- tin
- alpha
- high purity
- ray
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 125
- 229910001128 Sn alloy Inorganic materials 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title abstract description 21
- 238000000034 method Methods 0.000 title abstract description 14
- 229910052718 tin Inorganic materials 0.000 claims abstract description 127
- 230000005260 alpha ray Effects 0.000 claims abstract description 71
- 229910052776 Thorium Inorganic materials 0.000 claims abstract description 39
- 229910052770 Uranium Inorganic materials 0.000 claims abstract description 39
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- 229910052745 lead Inorganic materials 0.000 claims abstract description 10
- 239000000470 constituent Substances 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 7
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 7
- -1 wherein Inorganic materials 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 abstract description 41
- 239000004065 semiconductor Substances 0.000 abstract description 40
- 238000000280 densification Methods 0.000 abstract description 3
- 238000005266 casting Methods 0.000 description 31
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 28
- 230000002285 radioactive effect Effects 0.000 description 28
- 238000005868 electrolysis reaction Methods 0.000 description 26
- 239000008151 electrolyte solution Substances 0.000 description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 14
- 239000002994 raw material Substances 0.000 description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 230000008859 change Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 239000000725 suspension Substances 0.000 description 10
- 239000000956 alloy Substances 0.000 description 8
- 230000004927 fusion Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910052713 technetium Inorganic materials 0.000 description 5
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000007670 refining Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000013014 purified material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910017770 Cu—Ag Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910020836 Sn-Ag Inorganic materials 0.000 description 2
- 229910020994 Sn-Zn Inorganic materials 0.000 description 2
- 229910020988 Sn—Ag Inorganic materials 0.000 description 2
- 229910009069 Sn—Zn Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- AUYOHNUMSAGWQZ-UHFFFAOYSA-L dihydroxy(oxo)tin Chemical compound O[Sn](O)=O AUYOHNUMSAGWQZ-UHFFFAOYSA-L 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000006166 lysate Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000941 radioactive substance Substances 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B25/00—Obtaining tin
- C22B25/04—Obtaining tin by wet processes
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B25/00—Obtaining tin
- C22B25/08—Refining
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
- C25C1/14—Electrolytic production, recovery or refining of metals by electrolysis of solutions of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
- C25F1/02—Pickling; Descaling
- C25F1/04—Pickling; Descaling in solution
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B13/00—Obtaining lead
- C22B13/06—Refining
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Abstract
Description
元素 | 原料 | 实施例1 | 实施例2 | 实施例3 | 实施例4 | 比较例1 |
Al | 1.0 | <0.01 | <0.01 | <0.01 | <0.01 | <0.01 |
S | 11 | 6 | 3 | 0.02 | 6 | 6 |
Fe | 60 | <0.01 | <0.01 | <0.01 | <0.01 | <0.01 |
Co | 10 | <0.1 | <0.1 | <0.1 | <0.1 | <0.1 |
Ni | 48 | <0.1 | <0.1 | <0.1 | <0.1 | <0.1 |
Cu | 26 | 0.3 | 0.1 | 0.3 | 0.3 | 0.3 |
As | 130 | 0.05 | <0.05 | 0.05 | 0.05 | 0.05 |
Cd | 2 | <0.05 | <0.05 | <0.05 | <0.05 | <0.05 |
In | 19 | <1 | <1 | <1 | <1 | <1 |
Sb | 63 | <0.5 | <0.5 | <0.5 | <0.5 | <0.5 |
Te | 0.5 | <0.1 | 0.1 | <0.1 | <0.1 | <0.1 |
Pb | 220 | 0.7 | 0.1 | 0.9 | 0.06 | 200 |
Bi | 98 | 0.1 | 0.05 | 0.3 | 0.01 | 20 |
U | 0.5 | <0.005 | <0.005 | <0.005 | <0.005 | 0.01 |
Th | 0.8 | <0.005 | <0.005 | <0.005 | <0.005 | 0.006 |
α射线量 | 8.6 | 0.0007 | 0.0007 | 0.0009 | <0.0005 | 8.0 |
元素 | 实施例5 | 实施例6 | 实施例7 | 比较例2 | 比较例3 | 比较例4 |
Al | <0.01 | <0.01 | <0.01 | <0.01 | <0.01 | <0.01 |
S | 7 | 6 | 6 | 22 | 10 | 8 |
Fe | <0.01 | <0.01 | <0.01 | 6.4 | 3.2 | 8.4 |
Co | <0.1 | <0.1 | <0.1 | 1.5 | 1.2 | 4.0 |
Ni | <0.1 | <0.1 | <0.1 | <0.1 | <0.1 | 8.0 |
元素 | 实施例5 | 实施例6 | 实施例7 | 比较例2 | 比较例3 | 比较例4 |
Cu | - | 0.3 | 2.3 | - | 9.8 | 2.3 |
As | 0.05 | <0.05 | 0.05 | 1.4 | 0.5 | 7 |
Cd | <0.05 | <0.05 | <0.05 | 0.2 | 0.1 | 0.8 |
In | <1 | <1 | <1 | 1 | <1 | 2 |
Sb | <0.5 | <0.5 | <0.5 | 1.0 | 0.5 | 1.5 |
Te | <0.1 | 0.1 | <0.1 | 0.8 | 0.4 | 4.1 |
Pb | 0.6 | 0.6 | 0.8 | 7.8 | 6.0 | 15.8 |
Bi | 0.1 | 0.15 | 0.1 | 0.6 | 0.5 | 1.0 |
U | <0.005 | <0.005 | <0.005 | 0.005 | <0.005 | <0.005 |
Th | <0.005 | <0.005 | <0.005 | <0.005 | <0.005 | 0.007 |
α射线量 | 0.0007 | 0.0005 | 0.0008 | 0.1 | 0.03 | 0.5 |
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005-193323 | 2005-07-01 | ||
JP2005193323 | 2005-07-01 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800239270A Division CN101213326B (zh) | 2005-07-01 | 2006-06-14 | 高纯度锡或锡合金及高纯度锡的制造方法 |
Publications (1)
Publication Number | Publication Date |
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CN101880893A true CN101880893A (zh) | 2010-11-10 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN2006800239270A Active CN101213326B (zh) | 2005-07-01 | 2006-06-14 | 高纯度锡或锡合金及高纯度锡的制造方法 |
CN2010102177417A Pending CN101880893A (zh) | 2005-07-01 | 2006-06-14 | 高纯度锡或锡合金及高纯度锡的制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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CN2006800239270A Active CN101213326B (zh) | 2005-07-01 | 2006-06-14 | 高纯度锡或锡合金及高纯度锡的制造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US20090098012A1 (zh) |
EP (1) | EP1900853B1 (zh) |
JP (3) | JP4472752B2 (zh) |
KR (1) | KR100958652B1 (zh) |
CN (2) | CN101213326B (zh) |
SG (1) | SG138124A1 (zh) |
TW (1) | TW200712263A (zh) |
WO (1) | WO2007004394A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104816105A (zh) * | 2014-02-04 | 2015-08-05 | 千住金属工业株式会社 | 芯球、焊膏、成形焊料、助焊剂涂布芯球以及焊料接头 |
CN107849716A (zh) * | 2016-03-09 | 2018-03-27 | Jx金属株式会社 | 高纯度锡及其制造方法 |
TWI651415B (zh) * | 2015-10-19 | 2019-02-21 | 日商Jx金屬股份有限公司 | 高純度錫及其製造方法 |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004034427A2 (en) * | 2002-10-08 | 2004-04-22 | Honeywell International Inc. | Semiconductor packages, lead-containing solders and anodes and methods of removing alpha-emitters from materials |
WO2011114824A1 (ja) * | 2010-03-16 | 2011-09-22 | Jx日鉱日石金属株式会社 | α線量が少ない錫又は錫合金及びその製造方法 |
JP5822250B2 (ja) * | 2010-03-31 | 2015-11-24 | Jx日鉱日石金属株式会社 | α線量が少ない銀又は銀を含有する合金及びその製造方法 |
US8277774B2 (en) | 2011-01-27 | 2012-10-02 | Honeywell International | Method for the preparation of high purity stannous oxide |
KR101623629B1 (ko) * | 2011-03-07 | 2016-05-23 | 제이엑스 킨조쿠 가부시키가이샤 | 구리 또는 구리 합금, 본딩 와이어, 구리의 제조 방법, 구리 합금의 제조 방법 및 본딩 와이어의 제조 방법 |
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WO2007004394A1 (ja) | 2007-01-11 |
EP1900853B1 (en) | 2018-05-09 |
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CN101213326A (zh) | 2008-07-02 |
US20140332404A1 (en) | 2014-11-13 |
JP2013189710A (ja) | 2013-09-26 |
JP5296269B1 (ja) | 2013-09-25 |
EP1900853A4 (en) | 2011-07-06 |
KR20080015942A (ko) | 2008-02-20 |
JP4472752B2 (ja) | 2010-06-02 |
KR100958652B1 (ko) | 2010-05-20 |
CN101213326B (zh) | 2010-11-17 |
US20090098012A1 (en) | 2009-04-16 |
US9340850B2 (en) | 2016-05-17 |
JPWO2007004394A1 (ja) | 2009-01-22 |
TW200712263A (en) | 2007-04-01 |
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SG138124A1 (en) | 2008-09-30 |
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